CN113485511B - Band gap reference circuit with low temperature coefficient - Google Patents
Band gap reference circuit with low temperature coefficient Download PDFInfo
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- CN113485511B CN113485511B CN202110755566.5A CN202110755566A CN113485511B CN 113485511 B CN113485511 B CN 113485511B CN 202110755566 A CN202110755566 A CN 202110755566A CN 113485511 B CN113485511 B CN 113485511B
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- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The invention relates to a band-gap reference circuit with a low temperature coefficient, which solves the technical problem of how to improve the performance of a Brokaw band-gap reference circuit. The invention is widely used for providing reference voltage for integrated circuits.
Description
Technical Field
The invention relates to the technical field of band-gap reference circuits in integrated circuits, in particular to a band-gap reference circuit with a low temperature coefficient.
Background
The bandgap reference circuit is a crucial module in an integrated circuit, and can provide a reference voltage with small fluctuation variation due to temperature, power supply voltage and process for other circuit systems. The bandgap reference circuit is usually integrated in a digital-to-analog converter, an analog-to-digital converter, a low dropout regulator, etc. to provide a reference voltage for the digital-to-analog converter, the analog-to-digital converter, the low dropout regulator, etc.
Referring to the Brokaw bandgap reference circuit of fig. 1, the basic principle is to superimpose a voltage with positive temperature coefficient and a voltage with negative temperature coefficient in proper proportion to obtain a reference voltage with approximately zero temperature coefficient at the output of the reference circuit. Voltage V+Having a positive temperature coefficient and a negative temperature coefficient, the voltage V-satisfies equation (1) by selecting appropriate weights β and α.
An output voltage with a zero temperature coefficient can be obtained, and the expression of the output voltage is shown in formula (2).
VREF＝αV++βV- (2)
CTAT voltage V-Typically by the base-emitter voltage V of a Bipolar Junction Transistor (BJT)BEProviding, a PTAT voltage V+Base-emitter voltage V from two BJTs with different areasBEDifference value Δ V ofBEAnd (4) generating.
Therefore, with the development of integrated circuit technology, how to improve the performance of the Brokaw bandgap reference circuit is a technical problem to be solved urgently by those skilled in the art.
Disclosure of Invention
The invention provides a bandgap reference circuit with a low temperature coefficient, aiming at solving the technical problem of improving the performance of the conventional Brokaw bandgap reference circuit.
The invention provides a band-gap reference circuit with a low temperature coefficient, which comprises a fifteenth MOSFET, a third resistor, a fourth resistor, a first BJT transistor, a second resistor, a first resistor and a first amplifier, wherein the source electrode of the fifteenth MOSFET is connected with a power supply, one end of the third resistor is connected with the drain electrode of the fifteenth MOSFET, the other end of the third resistor is connected with the collector electrode of the first BJT transistor, one end of the fourth resistor is connected with the drain electrode of the fifteenth MOSFET, the other end of the fourth resistor is connected with the collector electrode of the second BJT transistor, the base electrode of the first BJT transistor is connected with the base electrode of the second BJT transistor, the emitter electrode of the first BJT transistor is grounded through the second resistor and the first resistor, the emitter electrode of the second BJT transistor is connected with a node between the second resistor and the first resistor, and the node between the collector electrode of the third resistor and the first BJT transistor is connected with the positive phase input end of the first amplifier, the node between the fourth resistor and the collector of the second BJT transistor is connected with the inverting input end of the first amplifier, the output end of the first amplifier is connected with the base of the first BJT transistor, the band-gap reference circuit with the low temperature coefficient further comprises a second amplifier, the second amplifier is provided with a first positive phase input end, a second positive phase input end, an inverting input end and an output end, the node between the third resistor and the collector of the first BJT transistor is connected with the first positive phase input end, the node between the fourth resistor and the collector of the second BJT transistor is connected with the second positive phase input end, the inverting input end of the second amplifier is connected with the base of the second BJT transistor, and the grid of a fifteenth MOSFET is connected with the output end of the second amplifier.
Preferably, the second amplifier comprises a thirteenth MOSFET tube, a fourteenth MOSFET tube, a fifth BJT transistor, a fourth BJT transistor, a third BJT transistor, a sixth resistor, a fifth resistor and a twelfth MOSFET tube, wherein a collector of the fifth BJT transistor and a collector of the fourth BJT transistor are connected together and then connected to a drain of the thirteenth MOSFET tube, an emitter of the fifth BJT transistor and an emitter of the fourth BJT transistor are connected together and then connected to one end of the sixth resistor, the other end of the sixth resistor is connected to a drain of the twelfth MOSFET tube, an emitter of the third BJT transistor is connected to a drain of the twelfth MOSFET tube through the fifth resistor, a collector of the third BJT transistor is connected to a drain of the fourteenth MOSFET tube, a gate of the fourteenth MOSFET tube is connected to a gate of the thirteenth MOSFET tube, a source of the thirteenth MOSFET tube is connected to the power supply, a source of the fourteenth MOSFET tube is connected to the source VDD, and a gate and a drain of the thirteenth MOSFET tube are connected together, the source electrode of the twelfth MOSFET is grounded, the base electrode of the fifth BJT transistor is used as a first positive phase input end of the second amplifier, the base electrode of the fourth BJT transistor is used as a second positive phase input end, the base electrode of the third BJT transistor is used as an inverted phase input end, and the collector electrode of the third BJT transistor is used as an output end.
The invention has the advantages that the temperature coefficient of the conventional Brokaw band-gap reference circuit is optimized, the advantage of ultralow temperature coefficient is achieved, the noise performance is better, and the requirement of a high-precision circuit system on the reference circuit can be met.
Further features and aspects of the present invention will become apparent from the following description of specific embodiments with reference to the accompanying drawings.
Drawings
FIG. 1 is a circuit schematic of a Brokaw bandgap reference circuit;
FIG. 2 is a circuit diagram of a bandgap reference circuit of the present invention;
fig. 3 is a circuit diagram of the amplifier AMP 2;
fig. 4 is a circuit diagram of the amplifier AMP 1;
FIG. 5 is a graph showing simulation of temperature characteristics of a bandgap reference circuit according to the present invention;
FIG. 6 is a graph of a simulation of the linear adjustment rate of the bandgap reference circuit of the present invention;
FIG. 7 is a simulation diagram of the power supply rejection ratio of the bandgap reference circuit of the present invention;
fig. 8 is a graph of the output noise simulation of the bandgap reference circuit of the present invention.
The symbols in the drawings illustrate that:
M1-M15 are the first to the fifteenth MOSFET, R1-R9 are the first to the ninth resistor, Q1-Q7 are the first to the seventh BJT transistor, C1 is the capacitor, VDD is the power, VSS is the ground, V1 is the capacitorREFFor reference circuit output voltage, INN, INP1, INP2 are input terminals of a second amplifier AMP2, VOUTIs the output of the second amplifier AMP2, INN1, INN2 are the input of the first amplifier AMP1, VBIAS1、VBIAS2Is the bias voltage of the current mirror.
Detailed Description
The present invention will be described in further detail below with reference to specific embodiments thereof with reference to the attached drawings.
As shown in fig. 2, the bandgap reference circuit with low temperature coefficient of the present invention comprises a fifteenth MOSFET M15, a third resistor R3, a fourth resistor R4, a first BJT transistor Q1, a second BJT transistor Q2, the second resistor R2, the first resistor R1, the first amplifier AMP1, the second amplifier AMP2, the source of the fifteenth MOSFET M15 is connected with the power supply VDD, one end of the third resistor R3 is connected with the drain of the fifteenth MOSFET M15, the other end of the third resistor R3 is connected with the collector of the first BJT transistor Q1, one end of the fourth resistor R4 is connected with the drain of the fifteenth MOSFET, the other end of the fourth resistor R4 is connected with the collector of the second BJT transistor Q2, the base of the first BJT transistor Q1 is connected with the base of the second BJT transistor Q2, the emitter of the first BJT transistor Q1 is grounded through the second resistor R2 and the first resistor R1, and the emitter of the second BJT transistor Q2 is connected with the node between the second resistor R2 and the first resistor R1. A node a1 between the third resistor R3 and the collector of the first BJT transistor Q1 is connected to a non-inverting input of the first amplifier AMP1, a node a2 between the fourth resistor R4 and the collector of the second BJT transistor Q2 is connected to an inverting input of the first amplifier AMP1, and an output of the first amplifier AMP1 is connected to a base of the first BJT transistor Q1. The gate of the fifteenth MOSFET M15 is connected to the output terminal of the second amplifier AMP 2.
The second amplifier AMP2, shown in FIG. 3, may be considered as a combination of two double-ended input single-ended output amplifiers having a common inverting input INN and an output VOUTAnd a power supply VDD, a fifth resistor R5 and a sixth resistor R6 are added to an emitter of an input tube of the amplifier to improve the linearity of the amplifier, and the fifth resistor R5 and the sixth resistor R6 are negative feedback resistors. A second amplifierAMP2 includes thirteenth MOSFET M13, fourteenth MOSFET M14, fifth BJT transistor Q5, fourth BJT transistor Q4, third BJT transistor Q3, sixth resistor R6, fifth resistor R5, twelfth MOSFET M12, collector of fifth BJT transistor Q5 and collector of fourth BJT transistor Q4 connected together and then connected to drain of thirteenth MOSFET M13, emitter of fifth BJT transistor Q5 and emitter of fourth BJT transistor Q4 connected together and then connected to one end of sixth resistor R6, the other end of sixth resistor R6 connected to drain of twelfth MOSFET M12, emitter of third BJT transistor Q3 connected to drain of twelfth MOSFET M12 through fifth resistor R5, collector of third BJT transistor Q6855 connected to drain of fourteenth MOSFET M14, source of fourteenth MOSFET M14 connected to source of thirteenth MOSFET M14, source VDD of fourteenth MOSFET M14, the gate and drain of the thirteenth MOSFET M13 are connected together, the source of the twelfth MOSFET M12 is grounded, the base of the fifth BJT transistor Q5 is used as the first positive input terminal INP1 of the second amplifier AMP2, the base of the fourth BJT transistor Q4 is used as the second positive input terminal INP2, the base of the third BJT transistor Q3 is used as the negative input terminal INN, and the collector of the third BJT transistor Q3 is used as the output terminal VOUTThe gate of the twelfth MOSFET M12 is connected to the control signal VBIAS5. The drain of the twelfth MOSFET M12 is connected to the control signal PIBO 1. The second amplifier AMP2 is used for clamping the node potentials of the node A1 and the node A2 at V by using the characteristic that the input end is' virtual shortREFNearby, ensure BJT transistors Q1, Q2 work in the amplification region and form a feedback loop to stabilize the output voltage. The inverting input INN is connected to the base of the second BJT transistor Q2, the first non-inverting input INP1 is connected to the node A1 between the third resistor R3 and the collector of the first BJT transistor Q1, the second non-inverting input INP2 is connected to the node A2 between the fourth resistor R4 and the collector of the second BJT transistor Q2, and the output V is connected to the outputOUTIs connected with the gate of the fifteenth MOSFET M15.
The provision of the second amplifier AMP2 enables: on one hand, Q1 and Q2 can be arranged to work in an amplification region, and on the other hand, a closed-loop stable reference circuit output voltage is formed, so that the reference circuit has better stability.
As shown in fig. 4, the first amplifier AMP1 may specifically adopt a two-stage amplifier, where the first stage adopts a current mirror circuit formed by a first MOSFET M1 and a second MOSFET M2 as a load, and negative feedback resistors R7 and R8 are added to the source to reduce the influence of circuit mismatch and 1/f noise of M1 and M2; the second stage of the amplifier adopts a common source amplifier structure, so that the gain of the amplifier can be improved; r9 is zero setting resistance, and C1 is miller compensation capacitance, and the effect is to carry out frequency compensation to the amplifier, improves amplifier stability.
Due to the base-emitter voltage difference V of the BJT transistorBEThe expression is formula (3).
The voltage difference across the second resistor R2 is expressed by equation (4).
With the first amplifier AMP1 "pseudo-short" characteristic, A is adjusted1、A2Two-node clamping, so that A in FIG. 21、A2The node potentials are approximately equal due to the third resistor R3And a fourth resistor R4Are directly connected together, setting a third resistance R3And a fourth resistor R4The resistance is the same, then the first BJT transistor Q1And a second BJT transistor Q2The currents of the two branches are approximately equal. In addition, due to ISIs in direct proportion to its area, Q1And Q2Is set to 72:9, corresponding to ISThe ratio of R to R is also 72:9, and the formula (4) can be simplified to obtain R2Voltage difference V ofR2See formula (5).
Therefore, the output end voltage V of the band gap reference circuit of the inventionREFIs the expression (6)
By regulating R1And R2Is such that the reference voltage VREFA zero temperature coefficient is obtained at a certain temperature point.
The band gap reference circuit of the invention is simulated:
setting VDD power supply voltage as 5V DC voltage, and under TT process angle, performing DC scanning on simulation temperature of the reference circuit at-40 ℃ to 85 ℃, wherein V isREFAs shown in FIG. 5, the output voltage V is within the temperature range of-40 deg.C to 85 deg.CREFFluctuates in the range of 1.25312V to 1.25243V with an error of about 0.69mV, and is calculated to have a temperature coefficient of 4.405 ppm/deg.C over the range of-40 deg.C to 85 deg.C.
Setting VDD power supply voltage to be 5V, simulation temperature to be 25 ℃, performing 3.6V-5.5V direct current scanning on input power supply voltage under TT process angle, and generating linear adjustment rate simulation graph of output voltage VREF as shown in figure 6, wherein V isREFThe variation range is 1.253129V-1.253108V, the error is about 21 muV, and the linear adjustment rate is 11.7 muV/V.
The simulation temperature is set to be 25 ℃, the power supply voltage is 5V direct current voltage and 1V alternating current voltage is added, power supply rejection ratio simulation is carried out on the first-order band gap reference circuit under the TT process angle, and the simulation result is shown in figure 7. The power supply rejection ratio of the circuit at the low frequency of 1Hz is 89.12 dB; the power supply rejection ratio at 10kHz was 32.98 dB.
Setting the VDD power supply voltage as 5V direct current voltage, the simulation temperature as 25 ℃, performing noise simulation on the first-order band gap reference circuit under the TT process angle, setting the simulation frequency as 1 Hz-1 GHz, and setting the simulation result as shown in figure 8, wherein the circuit output noise at the low frequency of 1kHz is
The above description is only for the purpose of illustrating preferred embodiments of the present invention and is not to be construed as limiting the present invention, and it is apparent to those skilled in the art that various modifications and variations can be made in the present invention.
Claims (1)
1. A band gap reference circuit with a low temperature coefficient comprises a fifteenth MOSFET, a third resistor, a fourth resistor, a first BJT transistor, a second resistor, a first resistor and a first amplifier, wherein the source electrode of the fifteenth MOSFET is connected with a power supply, one end of the third resistor is connected with the drain electrode of the fifteenth MOSFET, the other end of the third resistor is connected with the collector electrode of the first BJT transistor, one end of the fourth resistor is connected with the drain electrode of the fifteenth MOSFET, the other end of the fourth resistor is connected with the collector electrode of the second BJT transistor, the base electrode of the first BJT transistor is connected with the base electrode of the second BJT transistor, the emitter electrode of the first BJT transistor is grounded through the second resistor and the first resistor, the emitter electrode of the second BJT transistor is connected with a node between the second resistor and the first resistor, and a node between the third resistor and the collector electrode of the first BJT transistor is connected with the positive phase input end of the first amplifier, the band-gap reference circuit with the low temperature coefficient is characterized by further comprising a second amplifier, wherein the second amplifier is provided with a first positive phase input end, a second positive phase input end, an inverse phase input end and an output end;
the second amplifier comprises a thirteenth MOSFET, a fourteenth MOSFET, a fifth BJT transistor, a fourth BJT transistor, a third BJT transistor and a sixth BJT transistorA resistor, a fifth resistor and a twelfth MOSFET, wherein the collector of the fifth BJT transistor and the collector of the fourth BJT transistor are connected together and then connected with the drain of the thirteenth MOSFET, the emitter of the fifth BJT transistor and the emitter of the fourth BJT transistor are connected together and then connected with one end of a sixth resistor, the other end of the sixth resistor is connected with the drain of the twelfth MOSFET, the emitter of the third BJT transistor is connected with the drain of the twelfth MOSFET through a fifth resistor, the collector of the third BJT transistor is connected with the drain of the fourteenth MOSFET, the gate of the fourteenth MOSFET is connected with the gate of the thirteenth MOSFET, the source of the thirteenth MOSFET is connected with the power supply, the source of the fourteenth MOSFET is connected with the power supply VDD, the gate and the drain of the thirteenth MOSFET are connected together, the source of the twelfth MOSFET is grounded, and the base of the fifth BJT transistor is used as the first positive phase input end of the second amplifier, the base electrode of the fourth BJT transistor is used as a second positive phase input end, the base electrode of the third BJT transistor is used as an inverted phase input end, and the collector electrode of the third BJT transistor is used as an output end; the gate of the twelfth MOSFET M12 is connected to the control signal VBIAS5。
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| CN101930247B (en) * | 2009-06-25 | 2012-06-20 | 上海华虹Nec电子有限公司 | Voltage reference circuit with automatic protection |
| CN102541149B (en) * | 2010-12-31 | 2014-04-09 | 无锡华润上华半导体有限公司 | Reference power circuit |
| US8278995B1 (en) * | 2011-01-12 | 2012-10-02 | National Semiconductor Corporation | Bandgap in CMOS DGO process |
| CN202083976U (en) * | 2011-05-05 | 2011-12-21 | 王宇星 | High-precision CMOS (Complementary Metal Oxide Semiconductor) band-gap reference circuit |
| CN102999077B (en) * | 2012-12-03 | 2014-08-13 | 哈尔滨工业大学（威海） | Current leveling circuit with high linear compensation |
| JP6242274B2 (en) * | 2014-04-14 | 2017-12-06 | ルネサスエレクトロニクス株式会社 | Band gap reference circuit and semiconductor device including the same |
| CN111190454B (en) * | 2020-02-28 | 2021-05-14 | 清华大学 | Curvature compensation low-temperature drift band gap reference voltage source circuit |
| CN111427410B (en) * | 2020-04-22 | 2022-05-20 | 中国科学院微电子研究所 | Band gap reference circuit |
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Non-Patent Citations (1)
| Title |
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| Design of resistorless low temperature coefficient band gap reference bias circuit;Soniya Gupte等;《2011 International Conference on Communication Systems and Network Technologies》;20110729;392-395 * |
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