CN113477042B - Method for treating gaseous pollutants based on plasma - Google Patents

Method for treating gaseous pollutants based on plasma Download PDF

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Publication number
CN113477042B
CN113477042B CN202110727157.4A CN202110727157A CN113477042B CN 113477042 B CN113477042 B CN 113477042B CN 202110727157 A CN202110727157 A CN 202110727157A CN 113477042 B CN113477042 B CN 113477042B
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plasma
gaseous pollutants
high voltage
reaction chamber
catalyst
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CN113477042A (en
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竹涛
张星
韩一伟
叶泽甫
宋上
朱竹军
孔卉茹
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Shanxi Gemeng Sino Us Clean Energy R & D Center Co ltd
China University of Mining and Technology Beijing CUMTB
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Shanxi Gemeng Sino Us Clean Energy R & D Center Co ltd
China University of Mining and Technology Beijing CUMTB
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/32—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by electrical effects other than those provided for in group B01D61/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2257/00—Components to be removed
    • B01D2257/30—Sulfur compounds
    • B01D2257/304—Hydrogen sulfide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2257/00—Components to be removed
    • B01D2257/30—Sulfur compounds
    • B01D2257/306—Organic sulfur compounds, e.g. mercaptans
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2257/00—Components to be removed
    • B01D2257/40—Nitrogen compounds
    • B01D2257/406—Ammonia
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2257/00—Components to be removed
    • B01D2257/70—Organic compounds not provided for in groups B01D2257/00 - B01D2257/602
    • B01D2257/708—Volatile organic compounds V.O.C.'s

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Plasma Technology (AREA)

Abstract

The embodiment of the invention discloses a method for treating gaseous pollutants based on plasma, belonging to the technical field of atmospheric pollution control. The plasma-based method for treating gaseous pollutants comprises the following steps: providing a high voltage power supply to power a high voltage electrode and a ground electrode located in the reaction chamber and forming a cylindrical arc channel between the high voltage electrode and the ground electrode; supplying compressed air into the reaction chamber, the compressed air generating plasma in the arc passage and forming a cylindrical plasma formation region; the compressed gaseous pollutants are sprayed to the plasma forming area, so that the shape of the plasma forming area is changed into an ellipsoid, and the gaseous pollutants and the plasma in the ellipsoid plasma forming area react at normal temperature. The method can efficiently treat the gaseous pollutants, and has the advantages of simple operation, low energy consumption and no secondary pollution.

Description

Method for treating gaseous pollutants based on plasma
Technical Field
The disclosure relates to the technical field of atmospheric pollution control, in particular to a method for treating gaseous pollutants based on plasma.
Background
With the continuous improvement of ecological environment, the deep treatment of volatile organic compounds, hydrogen sulfide, ammonia gas, mercaptan, thioamidine and other gaseous pollutants attracts extensive attention in all social circles. The traditional gaseous pollutant treatment technologies such as absorption, adsorption and the like are easy to generate secondary pollution, and the purification efficiency is low, so that the current environment-friendly emission requirements cannot be met. The plasma technology has high purification efficiency, strong applicability and wide application prospect.
Disclosure of Invention
In order to solve at least one aspect of the above problems and disadvantages in the prior art, embodiments of the present invention provide a plasma-based method for treating gaseous pollutants, which can effectively treat gaseous pollutants such as volatile organic compounds, hydrogen sulfide, ammonia gas, mercaptan, and thioamidine, and has the advantages of convenient operation, low energy consumption, no secondary pollution, etc.
According to one aspect of the present invention, there is provided a method of plasma-based treatment of gaseous pollutants, comprising: providing a high voltage power supply to power a high voltage electrode and a ground electrode located in the reaction chamber and forming a cylindrical arc channel between the high voltage electrode and the ground electrode; supplying compressed air into the reaction chamber, the compressed air generating plasma in the arc passage and forming a cylindrical plasma formation region; the compressed gaseous pollutants are sprayed to the plasma forming area, so that the shape of the plasma forming area is changed into an ellipsoid, and the gaseous pollutants and the plasma in the ellipsoid plasma forming area react at normal temperature.
Other objects and advantages of the present invention will become apparent from the following description of the embodiments of the present invention with reference to the accompanying drawings, which are set forth to provide a thorough understanding of the present invention.
Drawings
The invention will be described in further detail with reference to the accompanying drawings, in which:
FIG. 1 is a schematic view of a plasma purification apparatus for treating gaseous contaminants according to one embodiment of the present invention;
FIG. 2 is a schematic view of the structure inside the main body portion of the plasma purifying apparatus shown in FIG. 1;
FIG. 3 is a flow diagram of a method of preparing a catalyst in plate form according to one embodiment of the present invention;
fig. 4 is a flow chart of a method of plasma-based treatment of gaseous contaminants in accordance with one embodiment of the present invention.
Detailed Description
The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention and should not be construed as limiting the invention.
Furthermore, in the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details.
The terms of orientation such as up, down, left, right, front, and rear in the present specification are established based on the positional relationship shown in the drawings. The corresponding positional relationship may also vary depending on the drawings, and therefore, should not be construed as limiting the scope of protection.
In one embodiment, the plasma is composed of a conductive fluid of a plurality of free electrons, energetic ions, and neutral particles (e.g., molecules, atoms, and radicals). Macroscopically, the plasma appears electrically neutral. In the plasma, a large number of active particles are in an excited state, so that sufficiently high activation energy can be provided for chemical reactions, and chemical reactions that are difficult to occur at normal temperature can be performed. In one example, the plasma is mainly generated by gas high-voltage discharge, i.e. gas is ionized under the action of an applied electric field, and gas-phase molecules are broken by chemical bonds under the action of high-energy ions and active particles to generate physical and chemical reactions. In one example, the plasma technology can generate a large amount of active particles with strong oxidizing properties, such as high-energy electrons, hydroxyl radicals and the like, under normal temperature and pressure conditions, and further react with gaseous pollutants to generate other nontoxic or low-toxicity small molecular substances which are easy to adsorb or degrade, so that the plasma technology has the advantages of simplicity and convenience in operation, high purification efficiency, low energy consumption and the like.
In one embodiment, a plasma purification apparatus 100 for treating gaseous pollutants is provided. As shown in fig. 1 and 2, the plasma purification apparatus 100 includes a high voltage power supply 10, a reaction chamber 20, a high voltage electrode 30, and a ground electrode 40. The high-voltage power supply 10 comprises a high-voltage output end 12 and a grounding output end 14, the high-voltage electrode 30 is connected with the high-voltage output end 12, and the grounding electrode 40 is connected with the grounding output end 14, so that the high-voltage power supply 10 supplies power to the high-voltage electrode 30 and the grounding electrode 40. A plasma is formed in the reaction chamber 20. The reaction chamber 20 includes a peripheral wall 21, a top wall 22 closing a top end of the peripheral wall 21, and a bottom wall 23 closing a bottom end of the peripheral wall 21. The high voltage electrode 30 and the ground electrode 40 are located on the peripheral wall 21 of the reaction chamber 20, and the two electrodes 30, 40 are oppositely disposed. In one example, a cylindrical arc path is formed between the high voltage electrode 30 and the ground electrode 40 under the action of the high voltage power supply 10.
In one embodiment, the reaction chamber 20 further comprises air holes 24 in the peripheral wall 21 for introducing compressed air into the reaction chamber 20. The compressed air generates a plasma under the action of the arc and forms a cylindrical plasma-forming zone 50 between the high voltage electrode 30 and the ground electrode 40. In the plasma formation region 50, a large amount of active particles having strong oxidizing properties, such as energetic electrons, hydroxyl radicals, and the like, are included to react with gaseous pollutants at normal temperature. In one example, as shown in fig. 1, two air holes 24 are provided on the peripheral wall 21 in opposition. Of course, the embodiments of the present disclosure are not limited thereto, and those skilled in the art may also provide other numbers of air holes as needed.
In one embodiment, the reaction chamber 20 further comprises an inlet 25 located on the peripheral wall 21 for introducing the compressed gaseous pollutants into the reaction chamber 20. In one example, the reaction chamber 20 includes one, two, three, four, or more inlet holes 25. For example, as shown in fig. 1, the reaction chamber 20 includes four intake holes 25 located above and below the two air holes 24, and the four intake holes 25 are symmetrically distributed on the peripheral wall 21. Of course, the embodiment of the present invention is not limited thereto, and those skilled in the art can adjust the arrangement of the air intake holes as needed.
In one embodiment, plasma purification apparatus 100 further comprises a vent 60 located within reaction chamber 20. The breather 60 communicates with the intake hole 25 to inject the compressed gaseous pollutants into the plasma formation region 50. The shape of the plasma formation zone 50 changes from cylindrical to ellipsoidal due to the effect of the compressed gaseous contaminants. This increases the cross section of the plasma formation region, contributing to an improvement in the purification efficiency of gaseous pollutants. In one example, the number of snorkels 60 is the same as the number of intake ports 25, and may be, for example, one, two, three, four, or more. In the example of fig. 2, plasma purification apparatus 100 includes four snorkel tubes 60, with four snorkel tubes 60 being positioned above and below high voltage electrode 30 and ground electrode 40, respectively.
In one embodiment, the plasma purification apparatus 100 further comprises a linkage 70 located within the reaction chamber 20. In one example, the bottom end of the rod 70 is fixed to the bottom wall 23 of the reaction chamber 20, or both ends of the rod 70 are fixed to the top wall 22 and the bottom wall 23 of the reaction chamber 20, respectively. In one example, the securing may be accomplished by welding or adhesives or fasteners. In one example, the snorkel 60 is positioned on a linkage 70 to allow adjustment of the angle of the snorkel 60 to change the angle at which the compressed gaseous pollutants are ejected into the plasma formation zone 50, thereby also adjusting the shape of the plasma formation zone 50, such as an oval in the horizontal or vertical direction or an oval at other angles. In one example, the high voltage electrode 30 and the ground electrode 40 are also provided on the connecting rod 70 to form a compact structure.
In one embodiment, the end of breather tube 60 is provided with a nozzle 62. The nozzle 62 can accurately adjust the angle of the vent tube 60 to change the shape of the plasma forming region 50. In this way, the plasma and the gaseous pollutants will follow the same process, which helps to improve the efficiency of the purification of the gaseous pollutants.
In one embodiment, the plasma purification apparatus 100 further comprises a plate catalyst 80 located in the plasma formation region 50, as shown in FIG. 2. The plate catalyst 80 traps and reacts the plasma and the gaseous pollutants, thereby improving the purification efficiency of the gaseous pollutants. In one example, the plate catalyst 80 is a plate-type substrate (e.g., corrugated plate) having catalyst coated on its inner and outer surfaces. Alternatively, a honeycomb matrix may be employed. In one example, the active component of the plate catalyst 80 is a ternary metal oxide of manganese, cerium, and cobalt.
In one embodiment, as illustrated in FIG. 3, the plate catalyst 80 is prepared by the following process:
providing a cobalt source, a cerium source and a manganese source, and dissolving in water (preferably deionized water) to form a mixed solution;
adding a molecular sieve (e.g., 13X) to the mixed solution and dispersing the mixed solution under ultrasonic conditions (preferably for 1 to 4 hours, more preferably for 2 to 3 hours), and performing a heating treatment after the drying treatment to obtain a catalyst powder;
mixing the catalyst powder with sodium carboxymethyl cellulose, silica sol and water to obtain catalyst slurry;
coating the catalyst slurry on the inner and outer surfaces of the substrate under vacuum condition, and drying and roasting to obtain the plate catalyst.
In one example, the cobalt source is selected from at least one of cobalt nitrate, cobalt carbonate, cobalt sulfate, or hydrates thereof. In one example, the cerium source is at least one selected from the group consisting of cerium nitrate, cerium sulfate, cerium acetate, and cerium trichloride or at least one of their hydrates. In one example, the manganese source is selected from at least one of manganese nitrate, manganese acetate, manganese chloride, manganese sulfate, and manganese carbonate, or hydrates thereof. In one example, the cobalt source, cerium source, and manganese source are each Co (NO) 3 ) 2 ·6H 2 O、Ce(NO 3 ) 3 ·6H 2 O and Mn (CHCOO) 2 . In one example, Co (NO) 3 ) 2 ·6H 2 O、Ce(NO 3 ) 3 ·6H 2 O and Mn (CHCOO) 2 Is set to be (10-30): (20-30): (40-50), for example, 15:25: 45.
In one example, after ultrasonically dispersing the mixed solution, the mixed solution is dried (e.g., in an oven) at 80-120 ℃ (preferably 100 ℃) for 8-24 hours (preferably 12 hours). In one example, after the mixed solution is subjected to the drying treatment, the mixed solution is heated at 120-. For example, the temperature may be raised to 150 ℃ in a muffle furnace at a rate of 5 ℃/min, held for 2 hours, and then heated to 500 ℃ at a rate of 5 ℃/min for 4 hours. In one example, the powder obtained after the heat treatment is ground, and the catalyst powder of 40-60 mesh, for example, can be screened for subsequent treatment.
In one example, the mass ratio of the catalyst powder to the sodium carboxymethylcellulose, the silica sol, and the water is set to (30-40): (10-30): (10-20): (20-30). For example, the mass ratio may be set to 35:20:15: 25.
In one example, the coating process is performed in a vacuum coater. In one example, the calcination is carried out at 300-.
In one embodiment, the plasma purification apparatus 100 further comprises an air tube 90 located on the peripheral wall 21. The air tube 90 communicates with the air hole 24 to input the compressed air into the electric field to be ionized to form plasma. In one example, as shown in fig. 2, the plasma purifying apparatus 100 includes two air tubes 90 arranged oppositely, and the two air tubes 90 are arranged in parallel with the high voltage electrode 30 and the low voltage electrode 40, respectively. Of course, the embodiments of the present disclosure are not limited thereto, and those skilled in the art may also provide other numbers of air tubes or arrange the air tubes in other ways as needed as long as the number of the air tubes is the same as the number of the air holes and the air holes are communicated.
In one embodiment, a method for plasma-based treatment of gaseous pollutants is also provided. As shown in fig. 4, the method includes: providing a high voltage power supply 10 to supply power to a high voltage electrode 30 and a ground electrode 40 located in the reaction chamber 20 and forming a cylindrical arc path between the high voltage electrode and the ground electrode; supplying compressed air into the reaction chamber 20, the compressed air generating plasma in the arc path and forming a cylindrical plasma forming region 50; the compressed gaseous pollutants are injected to the plasma forming region 50 so that the shape of the plasma forming region becomes an ellipsoid, and the gaseous pollutants react with the plasma in the ellipsoid-shaped plasma forming region 50 at normal temperature.
In the embodiment of the present invention, the high voltage power supply 10 generates a strong electric field between the high voltage electrode 30 and the ground electrode 40, thereby forming a cylindrical arc channel between the high voltage electrode 30 and the ground electrode 40, the compressed air is broken down by an arc in the arc channel to form a plasma discharge region (i.e., the plasma formation region 50), and the plasma formation region 50 is in a negative pressure state under the action of the compressed air flow. After the gaseous pollutants contained in the compressed gas flow are injected into the plasma forming region 50, the gaseous pollutants are sufficiently mixed with the plasma due to the negative pressure state of the plasma forming region. The plasma contains a large amount of active free particles, and the plasma can efficiently react with gaseous pollutants at normal temperature by virtue of the strong oxidizing property of the active free particles, so that the gaseous pollutants are reacted into carbon dioxide and water, and the gas is purified.
In an embodiment of the present invention, the gaseous pollutants are directly delivered to the plasma formation process, thereby facilitating an improvement in the purification efficiency of the gaseous pollutants. For example, the process of the present invention can be effective in treating high concentrations of gaseous contaminants, such as 2000mg/m 2 The above hydrogen sulfide gas.
In one embodiment, the compressed air is provided at a gas velocity of 1-4m/s, preferably 2-3m/s, and the compressed gaseous contaminants are provided at a gas velocity of 6-10m/s, preferably 8-9 m/s. The compressed gas flow helps the plasma to mix well with the gaseous pollutants to achieve purification of the gaseous pollutants. Moreover, the cooperation of the air flows of the above embodiments can achieve superior purification efficiency.
In one embodiment, the gaseous pollutant flow rate is greater than the air flow rate. In an embodiment, the gas flow rate of the gaseous contaminants is greater, and the gaseous contaminants will cause the plasma in the plasma formation region to travel in the same direction as the plasma by the greater gas flow of gaseous contaminants. Thus, the contact time of the plasma and the gaseous pollutants is long, the reaction time is long, and high purification efficiency is realized.
In one embodiment, gaseous contaminants are injected into plasma formation region 50 via a vent 60 within reaction chamber 20. In one example, the spray angle of breather pipe 60 is adjusted by disposing breather pipe 60 on linkage 70. This allows the injection angle to be accurately adjusted. In one example, snorkel 60 is adjusted to be at an angle of 5-60 degrees, preferably 10-30 degrees, more preferably 15 degrees, from the vertical axis. The arrangement is favorable for forming an ellipsoidal plasma forming area for high-efficiency treatment, the removal efficiency of gaseous pollutants (such as hydrogen sulfide gas) can reach more than 95%, the removal time is greatly shortened, and the gaseous pollutants are efficiently removed.
In one embodiment, the high voltage power supply 10 is an ac high voltage power supply or a pulsed high voltage power supply. In one example, the output voltage of the AC high voltage power supply is 5-25kV (preferably 10-20kV, more preferably 15kV), the frequency is 100-300Hz (preferably 150-250Hz, more preferably 200Hz), and the discharge power is 200-2000W (preferably 500-1500W, more preferably 800-1200W) to generate plasma with appropriate concentration. In one example, the output voltage of the pulsed high voltage power supply is 5-25kV (preferably 10-20kV, more preferably 15kV), the output pulse frequency is 200-400 pulses per second (preferably 300 pulses per second), and the pulse duration is 5-20ns (preferably 8-16ns, more preferably 10ns) to generate plasma of appropriate concentration.
In the embodiment of the disclosure, a cylindrical arc channel is generated between a high-voltage electrode and a grounding electrode through a high-voltage power supply, and the compressed air generates plasma under the action of the arc, so that a cylindrical plasma forming area is formed; and then the compressed gaseous pollutants are sprayed to the plasma forming area, and the shape of the plasma forming area is changed into an ellipsoid shape, so that the plasma and the gaseous pollutants are fully mixed, and the effect of treating the gaseous pollutants by using the plasma can be realized in a normal-temperature environment. Thus, the process of the present application is able to effectively treat gaseous pollutants in a manner that is low in energy consumption.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (8)

1. A method for plasma-based treatment of gaseous pollutants comprising:
providing a high voltage power supply to supply power to a high voltage electrode and a ground electrode located in a reaction chamber and forming a cylindrical arc passage between the high voltage electrode and the ground electrode, the reaction chamber including a connecting rod on which the high voltage electrode and the ground electrode are disposed;
supplying compressed air to the reaction chamber through two air holes, the compressed air generating plasma in the arc passage and forming a cylindrical plasma forming region, wherein the two air holes are located on a peripheral wall of the reaction chamber and are oppositely arranged;
injecting compressed gaseous pollutants into a plasma forming area, so that the shape of the plasma forming area is changed into an ellipsoid, and the gaseous pollutants react with plasma in the ellipsoidal plasma forming area at normal temperature,
the reaction chamber comprises four air inlet holes which are symmetrically distributed on the peripheral wall, a vent pipe is respectively arranged above and below the high-voltage electrode and the grounding electrode in the reaction chamber, gaseous pollutants are sprayed into a plasma forming area through the four vent pipes which are communicated with the four air inlet holes in the reaction chamber, the jet angle of the vent pipes is adjusted by arranging the vent pipes on a connecting rod, and the included angle between the vent pipes and a vertical axis is adjusted to be 5-60 degrees, so that the shape of the plasma forming area is changed into an ellipsoidal shape.
2. The plasma-based method of treating gaseous pollutants according to claim 1, wherein the compressed air is provided at a gas velocity of 1-4m/s and the compressed gaseous pollutants are provided at a gas velocity of 6-10 m/s.
3. The plasma-based method of treating gaseous contaminants of claim 2, wherein the gaseous contaminants travel in the same direction as the plasma in the plasma-forming region.
4. The plasma-based treatment method of gaseous contaminants of any of claims 1-3, further comprising:
a plate catalyst is disposed in the plasma formation zone, the plate catalyst traps plasma and gaseous contaminants and reacts.
5. The plasma-based method for treating gaseous pollutants according to claim 4, wherein the plate-type catalyst adopts a plate-type substrate, the inner and outer surfaces of the plate-type substrate are coated with the catalyst,
the active component of the plate type catalyst is a manganese, cerium and cobalt ternary metal oxide.
6. The plasma-based method for treating gaseous pollutants according to claim 5, wherein the plate catalyst is prepared by:
providing a cobalt source, a cerium source and a manganese source, and dissolving in water to form a mixed solution;
adding a molecular sieve into the mixed solution, dispersing the mixed solution under an ultrasonic condition, drying, and then heating to obtain catalyst powder;
mixing the catalyst powder with sodium carboxymethyl cellulose, silica sol and water to obtain catalyst slurry;
coating the catalyst slurry on the inner and outer surfaces of the plate-type substrate under vacuum condition, and drying and roasting to obtain the plate-type catalyst.
7. The plasma-based treatment of gaseous pollutants according to claim 6,
the cobalt source, cerium source and manganese source are each Co (NO) 3 ) 2 ·6H 2 O、Ce(NO 3 ) 3 ·6H 2 O and Mn (CHCOO) 2 And Co (NO) 3 ) 2 ·6H 2 O、Ce(NO 3 ) 3 ·6H 2 O and Mn (CHCOO) 2 The mass ratio of (10-30) to (20-30) to (40-50);
heating the mixed solution at the temperature of 120-180 ℃ for 1-3 hours, and then heating at the temperature of 400-600 ℃ for 3-5 hours to carry out heating treatment on the mixed solution;
the mass ratio of the catalyst powder to the sodium carboxymethylcellulose, the silica sol and the water is (30-40): 10-30): 10-20): 20-30);
roasting at the temperature of 300-600 ℃ for 2-10 hours.
8. The plasma-based method of treating gaseous pollutants according to any one of claims 1 to 3, wherein the high voltage power supply is an alternating current high voltage power supply or a pulsed high voltage power supply,
wherein the output voltage of the alternating current high-voltage power supply is 5-25kV, the frequency is 100-300Hz, and the discharge power is 200-2000W;
the output voltage of the pulse high-voltage power supply is 5-25kV, the output pulse frequency is 200-400 pulses per second, and the pulse duration is 10 ns.
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CN114797406B (en) 2022-06-29 2022-09-13 浙大城市学院 Self-adaptive rotary electrode low-temperature plasma reactor
CN115888694B (en) * 2022-10-31 2024-05-24 电子科技大学长三角研究院(湖州) Low-temperature plasma functional catalyst and preparation method thereof

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JP2001009233A (en) * 1999-06-30 2001-01-16 Daihen Corp Plasma arc decomposing and detoxifying device for fluorocarbon, or the like
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