CN113471250A - Organic light-emitting display panel and display device - Google Patents
Organic light-emitting display panel and display device Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1237—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a different composition, shape, layout or thickness of the gate insulator in different devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
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Abstract
The embodiment of the application provides an organic light-emitting display panel and a display device. The display panel comprises a substrate, a driving unit and a light emitting unit, wherein the driving unit and the light emitting unit are positioned on the substrate; the driving unit comprises a driving transistor and at least one switching transistor; the driving transistor is an organic thin film transistor and comprises a first active layer, a first grid electrode, a first source electrode and a first drain electrode, and a first insulating layer is arranged between the first active layer and the first grid electrode in a spacing mode; the switch transistor is a low-temperature polycrystalline thin film transistor and comprises a second active layer, a second grid electrode, a second source electrode and a second drain electrode, a second insulating layer is arranged between the second active layer and the second grid electrode in a spaced mode, the first insulating layer and the second insulating layer are different insulating layers, and the second grid electrode is located on one side, far away from the substrate, of the second active layer. The display device can meet the characteristic requirements of the driving transistor and the switching transistor at the same time, ensures the stability of display brightness, and meets the requirements of high refresh rate and high resolution on switching speed.
Description
Technical Field
The invention belongs to the technical field of display, and particularly relates to an organic light-emitting display panel and a display device.
Background
In the conventional Organic Light Emitting display technology, a low temperature polysilicon thin film transistor is generally used to manufacture a driving unit, and the driving unit adjusts brightness by controlling the current flowing through an OLED (Organic Light-Emitting Diode) device. When the OLED is used as a light-emitting device, the required driving current is small, and the low-temperature polycrystalline silicon thin film transistor has the characteristic of high mobility. When the low-temperature polysilicon thin film transistor is used as the driving transistor, the driving transistor is required to be biased in a subthreshold region under most gray-scale brightness to provide proper driving current. The uniformity of the active layer of the polycrystalline structure in the low-temperature polycrystalline silicon thin film transistor is poor, the threshold voltage of each driving transistor is different, and the difference of driving currents provided under the same bias voltage during the operation near the sub-threshold value is large, so that the uniformity of the display brightness is poor. And the adjustable bias voltage range is relatively small when the low-temperature polycrystalline silicon thin film transistor works near the subthreshold, when the low-temperature polycrystalline silicon thin film transistor drives the OLED device to emit light for a long time, the threshold voltage of the thin film transistor can drift, the drift of the threshold voltage can cause the change of the driving current to be very obvious, and further the stability of the display brightness is influenced.
Disclosure of Invention
In view of this, the present application provides an organic light emitting display panel and a display device, in which a switching transistor in a driving unit is a low temperature polysilicon thin film transistor, and a driving transistor is an organic thin film transistor, so as to ensure performance stability and uniformity of the driving transistor, and further improve brightness stability of the display panel.
In a first aspect, an embodiment of the present application provides an organic light emitting display panel, including: the driving unit is connected with the light-emitting unit; the driving unit comprises a driving transistor and at least one switching transistor; the driving transistor is an organic thin film transistor and comprises a first active layer, a first grid electrode, a first source electrode and a first drain electrode, and a first insulating layer is arranged between the first active layer and the first grid electrode in a spacing mode; at least one switching transistor is a low-temperature polycrystalline thin film transistor, the switching transistor comprises a second active layer, a second grid electrode, a second source electrode and a second drain electrode, a second insulating layer is arranged between the second active layer and the second grid electrode in an interval mode, the second grid electrode is located on one side, far away from the substrate, of the second active layer, and the first insulating layer and the second insulating layer are different insulating layers. According to the embodiment of the application, the organic thin film transistor and the low-temperature polycrystalline thin film transistor are integrated to manufacture the driving unit to drive the light-emitting unit to emit light, the organic thin film transistor is used as the driving transistor, and the low-temperature polycrystalline thin film transistor is used as the switching transistor. The gate insulating layer (also referred to as the first insulating layer) of the driving transistor and the gate insulating layer (also referred to as the second insulating layer) of the switching transistor are different insulating layers, so that the parameters such as the thickness of the first insulating layer and the second insulating layer, the manufacturing materials and the like can be set respectively, different characteristic requirements of the driving transistor and the switching transistor are met, and the driving transistor and the switching transistor are guaranteed to have optimal performance. The organic thin film transistor is used as a driving transistor, the mobility of the organic thin film transistor is relatively low, good stability and uniformity can be realized by processing the organic thin film transistor in a large area under a low-temperature process, the organic thin film transistor can work in an on-state area above threshold voltage to drive a light-emitting unit to emit light, and slight drift of the threshold voltage has small influence on driving current after the driving transistor works for a long time, so that the stability of display brightness is ensured. In addition, the switch transistor is a low-temperature polycrystalline thin film transistor with a top gate structure in the embodiment of the application, and other structures in the switch transistor cannot be damaged due to the high temperature of the laser annealing process in the manufacturing process, so that the performance reliability of the switch transistor is ensured.
Specifically, the material for manufacturing the first insulating layer comprises an organic insulating material. The organic semiconductor material and the organic insulating material have better contact performance, so that the performance reliability of the device of the organic thin film transistor is better, the bending resistance of the organic insulating material is better, and the flexibility of the device is favorably improved.
The thickness of the first insulating layer is d1, wherein d1 is more than or equal to 100nm and less than or equal to 1000 nm. The leakage current is too small due to the fact that the thickness of the first insulating layer is too large, so that the working voltage of the first grid electrode is improved, and the power consumption is increased; meanwhile, the phenomenon that the leakage current is too large due to the fact that the thickness of the first insulating layer is too small is avoided, and the magnitude of the driving current is not easy to control when the light emitting unit is driven to perform gray scale display.
Specifically, the material for manufacturing the second insulating layer includes an inorganic insulating material. The second active layer made of the inorganic insulating material has good contact with the low-temperature polycrystalline silicon semiconductor layer, and the manufacturing process does not have adverse effect on the performance of the low-temperature polycrystalline silicon semiconductor layer, so that the characteristic stability of the switching transistor can be ensured.
The thickness of the second insulating layer is d2, wherein d2 is more than or equal to 50nm and less than or equal to 300 nm. The switching transistor can be ensured to have higher switching speed, and the requirements of high refresh rate and high resolution are met.
Specifically, the first active layer is located on one side of the first gate electrode, which is far away from the substrate. The driving transistor is a transistor with a bottom gate structure, the yield of the via hole connection between the anode and the first drain can be ensured, and the connection reliability between the first gate and the second drain can also be ensured.
Specifically, two ends of the first active layer are respectively connected with a first source electrode and a first drain electrode, and the first source electrode and the first drain electrode are both in contact with the first insulating layer. The first source electrode and the first drain electrode are respectively in contact connection with the first active layer, a through hole connection process is not needed, the process is simplified, and the thickness of the display panel is reduced.
Optionally, the first gate and the second drain are made of the same material, and the first gate is connected to the second drain of the at least one switching transistor.
Further, the display panel includes a first metal layer and a second metal layer over the substrate; the second drain electrode is positioned on the first metal layer, and the second source electrode is positioned on the second metal layer. According to the embodiment of the application, the second source electrode, the second drain electrode and the first grid electrode are arranged on different metal layers, so that the wiring difficulty is simplified.
Optionally, the first source and the first drain are both located in the second metal layer.
Furthermore, the display panel also comprises a third insulating layer, the third insulating layer covers the second grid, and the second drain electrode is connected with the second active layer through a via hole penetrating through the third insulating layer and the second insulating layer; the display panel further comprises a connecting portion located on the first metal layer, the connecting portion is connected with the second active layer through a via hole penetrating through the third insulating layer and the second insulating layer, and the second source electrode is connected with the connecting portion through the via hole of the first insulating layer. The connecting part plays a role in connecting the second source electrode and the second active layer, and the problem that the performance reliability of the driving unit is influenced due to poor connection between the second source electrode and the second active layer caused by too deep punching depth when the second source electrode is directly connected with the second active layer is avoided.
Based on the same inventive concept, the embodiment of the present application further provides a display device, including the display panel provided in any embodiment of the present application.
The application provides an organic light emitting display panel and display device has following beneficial effect:
the embodiment of the application integrates the organic thin film transistor and the low-temperature polycrystalline thin film transistor to manufacture the driving unit to drive the light-emitting unit to emit light, the organic thin film transistor is adopted as the driving transistor, the low-temperature polycrystalline thin film transistor is adopted as the switching transistor, the grid insulating layer of the driving transistor and the grid insulating layer of the switching transistor are arranged at different layers, so that the thickness of the first insulating layer and the second insulating layer and the parameters of manufacturing materials and the like can be respectively set, different characteristic requirements of the driving transistor and the switching transistor are met, and the driving transistor and the switching transistor are guaranteed to have the best performance. The organic thin film transistor is used as a driving transistor, the mobility of the organic thin film transistor is relatively low, good stability and uniformity can be realized by processing the organic thin film transistor in a large area under a low-temperature process, the organic thin film transistor can work in an on-state area above a threshold voltage to drive a light-emitting unit to emit light, and slight drift of the threshold voltage has small influence on driving current after the driving transistor works for a long time, so that the stability of display brightness is ensured. The low-temperature polycrystalline thin film transistor is used as a switching transistor and has the characteristic of high mobility, so that the switching transistor has high switching speed and can realize high refresh rate and high resolution of display. In addition, the switch transistor is a top gate structure, and other structures in the switch transistor cannot be damaged by the high temperature achieved by the laser annealing process in the manufacturing process of the low-temperature polycrystalline silicon thin film transistor low-temperature polycrystalline silicon semiconductor layer, so that the performance reliability of the switch transistor is ensured.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without inventive labor.
Fig. 1 is a schematic view of a partial film structure of a display panel according to an embodiment of the present disclosure;
fig. 2 is a schematic circuit structure diagram of a driving unit according to an embodiment of the present disclosure;
fig. 3 is a schematic diagram of a partial film structure of a display panel according to an embodiment of the present disclosure;
fig. 4 is a schematic view of another partial film structure of a display panel according to an embodiment of the present disclosure;
fig. 5 is a schematic view of another partial film structure of a display panel according to an embodiment of the present disclosure;
fig. 6 is a schematic circuit diagram of a display panel according to an embodiment of the present disclosure;
fig. 7 is a schematic circuit structure diagram of a driving unit according to an embodiment of the present disclosure;
fig. 8 is a schematic view of a display device according to an embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The terminology used in the embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in the examples of the present invention and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
The embodiment of the application provides an organic light-emitting display panel and a display device, wherein a switch transistor in a driving unit of the display panel is a low-temperature polycrystalline silicon thin film transistor, a driving transistor is an organic thin film transistor, and the organic thin film transistor can be processed in a large area under a low-temperature process to achieve good stability and uniformity. The organic thin film transistor can work in an on-state area above a threshold value to drive the OLED to emit light, and the drift of the threshold voltage has little influence on the driving current after the OLED device is driven to emit light for a long time, so that the stability of the display brightness can be ensured. And the inventors consider that the characteristic requirements for the switching transistor, whose performance affects the refresh rate and resolution of the display, and the driving transistor, whose performance affects the driving current, are different in the driving unit that drives the OLED device to emit light. The first active layer and the first grid electrode of the driving transistor are further arranged to be separated by a first insulating layer, the second active layer and the second grid electrode of the switching transistor are separated by a second insulating layer, and the first insulating layer and the second insulating layer are different insulating layers, so that the performance of the driving transistor and the performance of the switching transistor cannot be influenced mutually, the thicknesses, manufacturing materials and the like of the first insulating layer and the second insulating layer can be respectively set, the switching transistor is enabled to have higher switching speed, and the driving transistor can work in an on-state area to drive the device to emit light.
The foregoing is the main idea of the present application, and the following is a description of the main idea of the present application with specific examples.
Fig. 1 is a schematic view of a partial film structure of a display panel according to an embodiment of the present disclosure. Fig. 2 is a schematic circuit structure diagram of a driving unit according to an embodiment of the present disclosure.
As shown in fig. 1, the display panel includes: the light emitting device comprises a substrate 10, a driving unit 20 and a light emitting unit 30, wherein the driving unit 20 is positioned above the substrate 10, and the light emitting unit 30 is connected with the driving unit 20; the driving unit 20 is a driving circuit that drives the light emitting unit 30 to emit light. Only one driving unit 20 and one light emitting unit 30 are illustrated in the drawing, and the light emitting unit 30 is an OLED device including an anode 31, a light emitting layer 32, and a cathode 33 stacked in sequence. The substrate 10 may be a rigid substrate or a flexible substrate. A planarization layer (not shown) may be disposed between the substrate 10 and the driving unit 20.
The drive unit 20 comprises a drive transistor 1 and at least one switching transistor 2.
The driving transistor 1 is an organic thin film transistor, the driving transistor 1 includes a first active layer 11, a first gate electrode 12, a first source electrode 13, and a first drain electrode 14, a first insulating layer 15 is interposed between the first active layer 11 and the first gate electrode 12, and the first insulating layer 15 is a gate insulating layer of the driving transistor 1. The driving transistor 1 is an organic thin film transistor, that is, the first active layer 11 of the driving transistor 1 is made of an organic semiconductor material, wherein the organic semiconductor material is Pentacene (pentalene), 6, 13-bis (triisopropylsilylethynyl) Pentacene (TIPS-Pentacene), copper phthalocyanine (CuPc), bis-naphtho [2,3-b: 2', 3' -f ] thieno [3,2-b ] thiophene) (DNTT), 6-bis (methoxyphenyl) anthracene (BOPAnt), Poly-3-hexylthiophene (P3HT), Poly [ bis (3-dodecyl-2-thienyl) -2,2 '-bithiophene-5, 5' -substituted ] (bis (3-dodecyl-2-thienyl) -2,2'-dithiophene-5,5' -diyl), PQT-12), PDVT-10(poly [2,5-bis (alkyl) pyrolo [3,4-c ] -1,4(2H,5H) -dione-alt-5, 5'-di (thiophene-2-yl) -2,2' - (E) -2- (2- (thi ophen-2-yl) thio-phene ]), dialkyl substituted pyrrolopyrroledione-thiophene-bithiophene-thiophene copolymer (DPP-DTT). The first active layer 11 may be formed by coating a film using a solution method and then patterning the first active layer 11 using an etching process. The first active layer 11 may be formed by vapor deposition. As illustrated in the drawing, the first drain 14 of the driving transistor 1 is connected to the anode 31 of the light emitting unit 30, and the cathode 33 of the light emitting unit 30 is connected to the ground. When the display panel operates, the driving transistor 1 generates a driving current to the light emitting unit 30 connected thereto, so that the light emitting unit 30 emits light. The figure illustrates the formation of a storage capacitor C between the first gate 12 and the first source 13.
The switching transistor 2 is a low-temperature polycrystalline thin film transistor, the switching transistor 2 includes a second active layer 21, a second gate 22, a second source 23, and a second drain 24, and a second insulating layer 25 is interposed between the second active layer 21 and the second gate 22, wherein the second gate 22 is located on a side of the second active layer 21 away from the substrate 10, that is, the switching transistor 2 is a top-gate structure transistor, and the second insulating layer 25 is a gate insulating layer of the switching transistor 2. The switch transistor 2 is a low-temperature polycrystalline thin film transistor, that is, the second active layer 21 is a low-temperature polycrystalline semiconductor material, and in the manufacturing process of the second active layer 21, amorphous silicon is processed and then subjected to a laser annealing process to obtain a low-temperature polycrystalline semiconductor layer. The low-temperature polycrystalline thin film transistor has the characteristic of high mobility, and can be used as a switching transistor to ensure high switching speed.
Fig. 1 and 2 are each illustrated with the drive unit 20 comprising one switching transistor 2, one drive transistor 1 and one storage capacitor C. The embodiment of the application is suitable for an xTyC driving unit, wherein x and y are positive integers, T represents a transistor, and C represents a storage capacitor. When the driving unit includes a plurality of switching transistors, at least one of the plurality of switching transistors is a low temperature polycrystalline thin film transistor.
Taking the circuit structure illustrated in fig. 2 as an example, the second drain of the switching transistor 2 is connected to the first gate of the driving transistor 1, wherein the second gate of the switching transistor 2 is connected to the Scan signal terminal Scan, the second source of the switching transistor 2 is connected to the Data signal terminal Data, the first source of the driving transistor 1 is connected to the constant voltage signal terminal Vdd, and the cathode of the light emitting unit (OLED) is connected to the ground terminal (GND). When the light emitting unit is driven to emit light, the Scan signal terminal Scan supplies a gate Scan signal, the Data signal terminal Data supplies a Data signal, and the constant voltage signal terminal Vdd supplies a constant voltage signal. Fig. 2 only shows that the driving transistor is a p-type transistor and the switching transistor is an n-type transistor, optionally, the active level signal (signal for controlling the switching transistor to be turned on) input at the Scan signal terminal Scan is a positive level, and the remaining level is 0, so that the working interval of the n-type switching transistor is more matched with the Scan signal; when the driving transistor is an organic thin film transistor, the mobility of the existing P-type organic thin film transistor is higher, and the requirement of OLED driving current is more easily met. Alternatively, the driving transistor and the switching transistor may be both n-type transistors or both p-type transistors.
According to the embodiment of the application, the organic thin film transistor and the low-temperature polycrystalline thin film transistor are integrated to manufacture the driving unit to drive the light-emitting unit to emit light, the organic thin film transistor is used as the driving transistor, and the low-temperature polycrystalline thin film transistor is used as the switching transistor. When the insulating layer (i.e., the gate insulating layer) between the first gate electrode and the first active layer of the driving transistor and the insulating layer (i.e., the gate insulating layer) between the second gate electrode and the second active layer of the switching transistor are the same insulating layer, parameters such as the manufacturing material and the thickness of the insulating layer are fixed, and the characteristic requirements of the driving transistor and the switching transistor cannot be met at the same time. Firstly, the required thickness of the gate insulating layer of the organic thin film transistor is different from the required thickness of the gate insulating layer of the low-temperature polycrystalline thin film transistor, and secondly, when the gate insulating layer meets the characteristic requirement of the switch transistor, the film forming characteristic of the first active layer of the driving transistor on the surface of the gate insulating layer is poor, so that the mobility of the driving transistor is low, the sub-threshold swing amplitude is high, the switching speed of the corresponding driving transistor is slow, and the on-state current is reduced; when the gate insulating layer meets the characteristic requirements of the driving transistor, the process of the gate insulating layer is difficult to be compatible with the current manufacturing process of the low-temperature polycrystalline semiconductor layer, and the process modification cost is very high.
In the embodiment of the present application, the gate insulating layer of the driving transistor (i.e., the first insulating layer) and the gate insulating layer of the switching transistor (i.e., the second insulating layer) are different insulating layers, so that parameters such as the thickness of the first insulating layer and the second insulating layer, manufacturing materials, and the like can be set respectively, different characteristic requirements of the driving transistor and the switching transistor are met, and the driving transistor and the switching transistor are guaranteed to have optimal performance. The organic thin film transistor is used as a driving transistor, the mobility of the organic thin film transistor is relatively low, good stability and uniformity can be realized by processing the organic thin film transistor in a large area under a low-temperature process, the organic thin film transistor can work in an on-state area above threshold voltage to drive a light-emitting unit to emit light, and slight drift of the threshold voltage has small influence on driving current after the driving transistor works for a long time, so that the stability of display brightness is ensured. The low-temperature polycrystalline thin film transistor is used as a switching transistor and has the characteristic of high mobility, so that the switching transistor has high switching speed and can realize high refresh rate and high resolution of display.
In addition, for the low-temperature polycrystalline thin film transistor, the low-temperature polycrystalline silicon semiconductor layer is obtained by processing amorphous silicon and then performing a laser annealing process, wherein the temperature can reach 1000 ℃ instantly in the laser annealing process. In the embodiment of the application, the switch transistor is a low-temperature polycrystalline thin film transistor with a top gate structure, and in the manufacturing process, the low-temperature polycrystalline silicon semiconductor layer (the second active layer) is firstly manufactured, and then the second gate electrode, the second drain electrode, the second source electrode and other structural layers are manufactured, so that other structures in the switch transistor cannot be damaged due to the high temperature reached by the laser annealing process, and the performance reliability of the switch transistor is ensured.
Specifically, the material for forming the first insulating layer may include an organic insulating material or an inorganic insulating material, for example, ES2110, polyvinyl alcohol cinnamate (PVCN), polyvinyl alcohol (PVA), polymethyl methacrylate (PMMA), silicon oxide (SiO), or the like2) Alumina (Al)2O3) Hafnium oxide (HfO)2) Silicon nitride (Si)3N4) At least one of them. Superior foodOptionally, the material for forming the first insulating layer includes an organic insulating material. The organic semiconductor material and the organic insulating material have better contact performance, when the driving transistor is a bottom gate structure transistor, the organic semiconductor layer made of the organic semiconductor material is formed on the organic insulating material, the film forming characteristic of the organic semiconductor layer is good, and the defects that the mobility of the formed organic semiconductor layer is low, the swing amplitude of a sub-threshold value is high and the like can be avoided, so that the performance reliability of the device of the organic thin film transistor is better, the bending resistance of the organic insulating material is better, and the flexibility of the device is favorably improved.
The thickness of the first insulating layer 15 is d1, and d1 is greater than or equal to 100nm and less than or equal to 1000 nm. The thickness of the first insulating layer is set to meet a certain range, so that the phenomenon that leakage current is too small due to too large thickness of the first insulating layer can be avoided, the working voltage of the first grid is improved, and power consumption is increased; meanwhile, the phenomenon that the leakage current is too large due to the fact that the thickness of the first insulating layer is too small is avoided, and the magnitude of the driving current is not easy to control when the light emitting unit is driven to perform gray scale display.
Specifically, the material for forming the second insulating layer includes inorganic insulating materials, such as: silicon oxide, silicon nitride, silicon oxynitride, and the like. The switch transistor is a top gate structure transistor, after the low-temperature polycrystalline silicon semiconductor layer (namely the second active layer) is manufactured, the second insulating layer is manufactured on the low-temperature polycrystalline silicon semiconductor layer, the second active layer made of the inorganic insulating material is good in contact with the low-temperature polycrystalline silicon semiconductor layer, the manufacturing process does not have adverse effects on the performance of the low-temperature polycrystalline silicon semiconductor layer, and the stability of the characteristics of the switch transistor can be guaranteed.
The thickness of the second insulating layer 25 is d2, and d2 is not less than 50nm and not more than 300 nm. Optionally, the size of d2 is about 150 nm. Within the range, the switching transistor can be ensured to have higher switching speed, and the requirements of high refresh rate and high resolution are met.
In the driving unit, the second drain 24 of at least one switching transistor 2 needs to be connected to the first gate 12, and in an embodiment, as shown in fig. 3, fig. 3 is a schematic view of a partial film structure of the display panel provided in the embodiment of the present application. The switching transistor 2 is a low temperature poly-crystalline thin film transistor, a second insulating layer 25 is interposed between the second gate electrode 22 and the second active layer 21, and the switching transistor 2 is a top gate structure transistor. The driving transistor 1 is an organic thin film transistor, a first insulating layer 15 is disposed between the first gate electrode 12 and the first active layer 11, and the first gate electrode 12 is disposed on a side of the first active layer 11 away from the substrate 10, so that the driving transistor 1 is a top gate structure transistor. The second drain 24 of the switching transistor 2 is connected to the first gate 12 of the driving transistor 1 by a via 51 through the second insulating layer 15 and the insulating layer 16. An insulating layer 17 is also provided over the first gate electrode 12, and the anode electrode 31 needs to be connected to the first drain electrode 14 through a via 52 that penetrates the insulating layer 17 and the first insulating layer 15. In this embodiment, the anode 31 needs to be connected to the first drain electrode 14 through a via penetrating through two insulating layers, and the first gate electrode 12 needs to be connected to the second drain electrode 24 through a via penetrating through two insulating layers.
The inventor thinks that the thicker the insulating layer penetrated by the via hole is, the greater the risk of the via hole process failure is, the risk of the via hole connection failure exists in the embodiment of fig. 3, and the process is increased when the driving transistor is a top gate structure transistor, which also results in the increase of the thickness of the display panel. Based on this, in the display panel provided in the embodiment of the present application, the first active layer 11 shown in fig. 1 is disposed on a side of the first gate electrode 12 away from the substrate 10, that is, the driving transistor 1 is a bottom-gate transistor. Compared with a driving transistor with a top gate structure, the number of the insulating layers between the anode 31 and the first drain electrode 14 is reduced, and the thickness of the insulating layer between the anode 31 and the first drain electrode 14 can be reduced, so that the yield of the via hole connection between the anode 31 and the first drain electrode 14 is ensured. And the distance between the first gate electrode 12 and the second drain electrode 24 can be reduced, and even if the first gate electrode 12 and the second drain electrode 24 are disposed in the same layer, the connection reliability between the first gate electrode 12 and the second drain electrode 24 can be ensured. In addition, the reduction of the thickness of the display panel is facilitated after the number of the insulating layers is reduced.
Further, as shown in fig. 1, two ends of the first active layer 11 are respectively connected to the first source electrode 13 and the first drain electrode 14, and both the first source electrode 13 and the first drain electrode 14 are in contact with the first insulating layer 15. In the manufacture of the display panel, after the first grid 12 is manufactured; forming a first insulating layer 15 over the first gate electrode 12; then, a metal layer is formed on the first insulating layer 15, and the first source electrode 13 and the first drain electrode 14 are formed on the metal layer by patterning, that is, the first source electrode 13 and the first drain electrode 14 are formed on the first insulating layer 15; then, the first active layer 11 is manufactured, and a structure in which both ends of the first active layer 11 are respectively connected to the first source electrode 13 and the first drain electrode 14, and the first insulating layer 15 is interposed between the first active layer 11 and the first gate electrode 12 is realized. Namely, the first active layer, the first source electrode and the first drain electrode are all manufactured on the first insulating layer, and the first source electrode and the first drain electrode are respectively in contact connection with the first active layer, so that a process procedure is simplified without a via connection process, and the thickness of the display panel is reduced.
Optionally, the first gate 12 and the second drain 24 are made of the same material at the same layer. The first gate 12 and the second drain 24 can be fabricated in the same process, which is advantageous for simplifying the process and reducing the overall film thickness. In the driving unit, the first gate is connected to the second drain of the at least one switching transistor, as shown in fig. 1, the first gate 12 is connected to the second drain 24, and a common electrode may be integrally formed in one process, where one end of the common electrode serves as the first gate 12 and the other end serves as the second drain 24, which is equivalent to direct contact connection between the first gate 12 and the second drain 24, and thus, compared with via connection, the connection reliability is higher and the process is simpler.
Further, in an embodiment, fig. 4 is a schematic view of another partial film structure of the display panel provided in the embodiment of the present application. As shown in fig. 4, the display panel includes a first metal layer 41 and a second metal layer 42 on the substrate 10; the second drain electrode 24 is located on the first metal layer 41, and the second source electrode 23 is located on the second metal layer 42. Optionally, the first gate 12 is also located on the first metal layer 41. In a conventional display panel, the source and the drain of the switch transistor are usually located in the same metal layer, while in the embodiment of the present application, the second source and the second drain are located in different metal layers. In consideration of the difference between the current organic thin film transistor and the low-temperature polycrystalline thin film transistor in the process, in order to ensure that the organic thin film transistor can meet the characteristic requirements of the driving transistor when being used as the driving transistor, the occupied area of the organic thin film transistor is larger than that of the low-temperature polycrystalline thin film transistor. If the second source 23, the second drain 24 and the first gate 12 are all disposed on the same metal layer, and the first gate 12 needs to occupy a larger area, the signal line connected to the second source 23 is limited in wiring space in the first metal layer under the requirement of high resolution, which makes wiring difficult. The second source electrode, the second drain electrode and the first grid electrode are arranged on different metal layers through the embodiment of the application, so that the wiring difficulty can be simplified.
Specifically, referring to fig. 4, the first source 13 and the first drain 14 are both located on the second metal layer 42, that is, the second source, the first source and the first drain are located on the same metal layer, so that sufficient wiring space is ensured under the requirement of high resolution, and the second source is not added with an additional metal layer, which simplifies the process and is also beneficial to reducing the thickness of the display panel.
In another embodiment, the second drain is located in the first metal layer, the second source is located in the second metal layer, and the second source, the first source and the first drain are located in different metal layers.
Continuing to refer to fig. 4, the display panel further includes a third insulating layer 26, the third insulating layer 26 covers the second gate electrode 22, and the second drain electrode 24 is connected to the second active layer 21 through a via 53 penetrating the third insulating layer 26 and the second insulating layer 25; the second source 23 is located on the same metal layer as the first source 13, the second source 23 is located on the first insulating layer 15, and the second source 23 is connected to the second active layer 21 through a via 54 penetrating through the first insulating layer 15, the third insulating layer 26, and the second insulating layer 25. Thereby, the connection of the second drain electrode and the second active layer, and the connection of the second source electrode and the second active layer are achieved. In an embodiment of the present application, the switching transistor is a low temperature polysilicon thin film transistor, wherein the second active layer of the switching transistor includes a channel region and a source region and a drain region respectively located at two ends of the channel region, that is, the channel region, the source region and the drain region are collectively referred to as the second active layer in the present application. After a patterning process is adopted to form a second active layer in the manufacturing process, a corresponding Si doping process needs to be carried out on a source region and a drain region so as to improve the conductivity of the source region and the drain region; then, when a second source electrode and a second drain electrode are correspondingly manufactured, the second source electrode is connected to a source electrode area of the second active layer, and the second drain electrode is connected to a drain electrode area of the second active layer.
In order to further ensure the reliability of the connection performance between the second source electrode and the second active layer, another embodiment is proposed in the present application, as shown in fig. 5, and fig. 5 is a schematic view of another partial film structure of the display panel provided in the embodiment of the present application. The display panel further includes a third insulating layer 26, the third insulating layer 26 covers the second gate electrode 22, and the second drain electrode 24 is connected to the second active layer 21 through a via hole 53 penetrating the third insulating layer 26 and the second insulating layer 25; the display panel further includes a connection portion 28 located on the first metal layer 41, the connection portion 28 is connected to the second active layer 21 through a via hole 55 penetrating through the third insulating layer 26 and the second insulating layer 25, and the second source electrode 23 is connected to the connection portion 28 through a via hole 56 of the first insulating layer 15. The connecting part plays a role in connecting the second source electrode and the second active layer, and the problem that the performance reliability of the driving unit is influenced due to poor connection between the second source electrode and the second active layer caused by too deep punching depth when the second source electrode is directly connected with the second active layer is avoided. In addition, the connecting part and the second drain electrode are positioned on the same metal layer and can be manufactured in the same process, namely, no additional process is added to the arrangement of the connecting part, and the process is relatively simple.
Specifically, fig. 6 is a schematic circuit structure diagram of the display panel provided in the embodiment of the present application, as shown in fig. 6, a plurality of light emitting units 30 are arranged in an array, and one light emitting unit 30 corresponds to one driving unit 20, where the driving unit 20 is only illustrated by the 2T1C circuit in the embodiment of fig. 2. The display panel includes a plurality of scan signal lines 81, a plurality of data lines 82, and a plurality of constant voltage signal lines 83, wherein the scan signal lines 81 are used for providing gate scan signals, the data lines 82 are used for providing data signals, and the constant voltage signal lines 83 are used for providing constant voltage signals. The plurality of light emitting cells 30 located in the same row are connected to the same scanning signal line 81, the plurality of light emitting cells 30 located in the same column are connected to the same data line 82, and the plurality of light emitting cells 30 located in the same column are connected to the same constant voltage signal line 83.
The driving unit in the embodiment of the present application may be any xTyC driving unit, such as 3T1C, 4T1C, 4T2C, 5T1C, 5T2C, 6T1C, and the like. In an embodiment, as shown in fig. 7, fig. 7 is a schematic circuit structure diagram of a driving unit provided in the embodiment of the present application. The driving unit comprises 7 transistors and 1 capacitor C, wherein the 7 transistors are respectively T1-T7, the transistor T4 is an organic thin film transistor, and the transistor T4 is a driving transistor; the other 6 transistors are low-temperature polycrystalline thin film transistors and are all switching transistors. Optionally, the transistor T1 and the transistor T3 are double-gate transistors. The circuit structure further includes a first Scan signal terminal Scan1, a second Scan signal terminal Scan2, a Data signal terminal Data, a constant voltage signal terminal Vdd, an initial signal terminal Vint, and a light emission control signal terminal Emit. In fig. 7, only the transistors are all p-type transistors as an example, and optionally, the transistors in the driving unit may also be n-type transistors.
Based on the same inventive concept, an embodiment of the present application further provides a display device, and fig. 8 is a schematic view of the display device provided in the embodiment of the present application, and as shown in fig. 8, the display device includes the display panel 100 provided in any embodiment of the present application. The specific structure of the display panel 100 has been described in detail in the above embodiments, and is not described herein again. Of course, the display device shown in fig. 8 is only a schematic illustration, and the display device may be any electronic device with a display function, such as a mobile phone, a tablet computer, a notebook computer, an electronic book, or a television.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (12)
1. An organic light emitting display panel, comprising: the LED display device comprises a substrate, a driving unit and a light emitting unit, wherein the driving unit and the light emitting unit are positioned on the substrate;
the driving unit comprises a driving transistor and at least one switching transistor;
the driving transistor is an organic thin film transistor and comprises a first active layer, a first grid electrode, a first source electrode and a first drain electrode, and a first insulating layer is arranged between the first active layer and the first grid electrode in an interval mode;
the at least one switching transistor is a low-temperature polycrystalline thin film transistor, the switching transistor comprises a second active layer, a second grid electrode, a second source electrode and a second drain electrode, a second insulating layer is arranged between the second active layer and the second grid electrode in an interval mode, the second grid electrode is located on one side, far away from the substrate, of the second active layer, and the first insulating layer and the second insulating layer are different insulating layers.
2. The display panel according to claim 1,
the first active layer is located on one side of the first grid electrode, which is far away from the substrate.
3. The display panel according to claim 2,
And two ends of the first active layer are respectively connected with the first source electrode and the first drain electrode, and the first source electrode and the first drain electrode are both contacted with the first insulating layer.
4. The display panel according to claim 1,
the first grid electrode and the second drain electrode are made of the same material, and the first grid electrode is connected with the second drain electrode of at least one switch transistor.
5. The display panel according to claim 1,
the display panel comprises a first metal layer and a second metal layer which are positioned above the substrate;
the second drain electrode is located on the first metal layer, and the second source electrode is located on the second metal layer.
6. The display panel according to claim 5,
the display panel further comprises a third insulating layer, the third insulating layer covers the second grid electrode, and the second drain electrode is connected with the second active layer through a through hole penetrating through the third insulating layer and the second insulating layer;
the display panel further comprises a connecting portion located on the first metal layer, the connecting portion is connected with the second active layer through a via hole penetrating through the third insulating layer and the second insulating layer, and the second source electrode is connected with the connecting portion through the via hole of the first insulating layer.
7. The display panel according to claim 5,
the first source electrode and the first drain electrode are both located on the second metal layer.
8. The display panel according to any one of claims 1 to 7,
the first insulating layer is made of organic insulating materials.
9. The display panel according to any one of claims 1 to 7,
the thickness of the first insulating layer is d1, wherein d1 is more than or equal to 100nm and less than or equal to 1000 nm.
10. The display panel according to any one of claims 1 to 7,
the second insulating layer is made of an inorganic insulating material.
11. The display panel according to any one of claims 1 to 7,
the thickness of the second insulating layer is d2, wherein d2 is more than or equal to 50nm and less than or equal to 300 nm.
12. A display device characterized by comprising the display panel according to any one of claims 1 to 11.
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| CN202010246044.8A CN113471250A (en) | 2020-03-31 | 2020-03-31 | Organic light-emitting display panel and display device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023115404A1 (en) * | 2021-12-20 | 2023-06-29 | 深圳市华星光电半导体显示技术有限公司 | Display panel |
| WO2024037537A1 (en) * | 2022-08-15 | 2024-02-22 | 嘉和半导体股份有限公司 | Integrated package |
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2020
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023115404A1 (en) * | 2021-12-20 | 2023-06-29 | 深圳市华星光电半导体显示技术有限公司 | Display panel |
| WO2024037537A1 (en) * | 2022-08-15 | 2024-02-22 | 嘉和半导体股份有限公司 | Integrated package |
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