CN113471226A - Image sensor and electronic equipment - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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Abstract
The application discloses an image sensor and electronic equipment, wherein the image sensor comprises a substrate, a first metal interconnection layer and a second metal interconnection layer which are sequentially formed on the substrate, and the substrate, the first metal interconnection layer and the second metal interconnection layer form a pixel structure; the pixel structure comprises an effective pixel area and a reference pixel area, the first metal interconnection layer comprises a plurality of first light-transmitting areas and first light-proof areas positioned between the first light-transmitting areas, and the second metal interconnection layer comprises a plurality of second light-transmitting areas and second light-proof areas positioned between the second light-transmitting areas; the first light-transmitting area and the second light-transmitting area in the effective pixel area are correspondingly arranged, and the first light-transmitting area and the second light-transmitting area in the reference pixel area are completely arranged in a staggered mode. This application walks in order to block incident light through the metal that changes the reference pixel region, has reduced the distance between reference pixel and the effective pixel, has reduced the chip height simultaneously, saves the cost, simplifies manufacturing process.
Description
Technical Field
The present application relates generally to the field of image processing technologies, and in particular, to an image sensor and an electronic device.
Background
An image sensor is a device that converts an optical image into an electronic signal. As an important component of a camera, an image sensor is widely used in electronic devices such as a digital camera, a mobile phone, and a computer. Image sensors can be classified into two broad categories, i.e., Charge Coupled Device (CCD) image sensors and Complementary Metal Oxide Semiconductor (CMOS) image sensors, according to the elements used.
Dark Current (Dark Current) is one of the characteristic indexes of an image sensor, and refers to the Current that a photoresistor flows when no light is irradiated under a certain applied voltage. The magnitude of the dark current generation signal varies with the integration time and the chip temperature, i.e., the longer the integration time, the larger the dark current signal generated by the image sensor, or the higher the chip temperature, the larger the dark current signal. Since the dark current signal affects the imaging quality, an optical reference pixel is generally disposed in the image sensor, and the effective pixel output and the optical reference pixel output are subtracted to eliminate the effect of the dark current on the effective signal.
In the process of implementing the invention, the inventor finds that at least the following problems exist in the prior art: the optical reference pixel is not used for generating an image but only used for eliminating dark current, so that the optical reference pixel needs to be shielded from light, and the influence on image quality caused by the light sensitivity of the optical reference pixel is avoided; meanwhile, this approach also requires a long distance between the optical reference pixel and the effective pixel, resulting in an increase in the area of the image sensor.
Disclosure of Invention
In view of the above-mentioned defects or shortcomings in the prior art, it is desirable to provide an image sensor and an electronic device, which can reduce the chip height of the image sensor, reduce the distance between the optical reference pixel and the effective pixel, save the production cost, and simplify the manufacturing process.
In a first aspect, the present application provides an image sensor, including a substrate, and a first metal interconnection layer and a second metal interconnection layer sequentially formed on the substrate;
the substrate, the first metal interconnection layer and the second metal interconnection layer form a pixel structure, and the pixel structure comprises an effective pixel area and a reference pixel area;
the first metal interconnection layer comprises a plurality of first light-transmitting areas and first light-tight areas positioned between the first light-transmitting areas, and the second metal interconnection layer comprises a plurality of second light-transmitting areas and second light-tight areas positioned between the second light-transmitting areas;
the first light-transmitting area and the second light-transmitting area in the effective pixel area are correspondingly arranged; the first light-transmitting region and the second light-transmitting region in the reference pixel region are completely displaced.
Optionally, the first transparent region in the reference pixel region is disposed corresponding to the second opaque region, and the second transparent region in the reference pixel region is disposed corresponding to the first opaque region.
Optionally, the first light-transmitting region is formed by opening on the first metal interconnection layer, and the second light-transmitting region is formed by opening on the second metal interconnection layer.
Optionally, the first light-transmitting area in the reference pixel area is smaller than the first light-transmitting area in the effective pixel area, and the second light-transmitting area in the reference pixel area is smaller than the second light-transmitting area in the effective pixel area.
Optionally, the pixel structure further comprises an invalid pixel region located between the effective pixel region and the reference pixel region;
the first light-transmitting area and the second light-transmitting area in the ineffective pixel area are correspondingly arranged.
Optionally, the thickness of the pixel structure in the effective pixel region part is smaller than that in the reference pixel region part.
Optionally, the pixel structure has a slope at a portion of the reference pixel region.
Optionally, the pixel structure further includes a color filter on the second metal interconnection layer, and a plurality of lenses on the color filter;
in the effective pixel region, the lens is disposed corresponding to the first light-transmitting region and the second light-transmitting region.
Optionally, the pixel structure further comprises a photodiode array located on a side of the substrate opposite to the first metal interconnection layer;
the photodiode array includes a plurality of photodiodes, and the photodiodes are disposed corresponding to the first and second light-transmitting regions in the effective pixel region to receive light incident from the first and second light-transmitting regions.
In a second aspect, the present application provides an electronic device comprising at least one image sensor as described in the first aspect.
According to the technical scheme, the embodiment of the application has the following advantages:
the embodiment of the application provides an image sensor and an electronic device, wherein the image sensor comprises a substrate, and a first metal interconnection layer and a second metal interconnection layer which are sequentially formed on the substrate, and the substrate, the first metal interconnection layer and the second metal interconnection layer form a pixel structure. The pixel structure comprises an effective pixel area and a reference pixel area, the first metal interconnection layer comprises a plurality of first light transmission areas and first light-tight areas located between the first light transmission areas, the second metal interconnection layer comprises a plurality of second light transmission areas and second light-tight areas located between the second light transmission areas, the first light transmission areas and the second light transmission areas in the effective pixel area are correspondingly arranged, and the first light transmission areas and the second light transmission areas in the reference pixel area are completely arranged in a staggered mode. The embodiment of the application enables light incident on the reference pixel to be blocked by changing the metal wiring of the reference pixel region, the position of the reference pixel can be closer to the position of the effective pixel based on the mode, the distance between the reference pixel and the effective pixel is reduced, meanwhile, the light shielding layer which takes light blocking metal as the reference pixel is also avoided, the chip height of the image sensor is reduced, the production cost is saved, and the manufacturing process is simplified.
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading of the following detailed description of non-limiting embodiments thereof, made with reference to the accompanying drawings in which:
fig. 1 is a schematic structural diagram of an image sensor according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of another image sensor provided in an embodiment of the present application;
fig. 3 is an exemplary diagram of an image sensor provided in an embodiment of the present application;
FIG. 4 is a schematic cross-sectional view of the image sensor AA' shown in FIG. 3 according to an embodiment of the present disclosure;
FIG. 5 is an example of the AA' cross-sectional structure shown in FIG. 4 in an embodiment of the present application;
fig. 6 is a schematic structural diagram of an effective pixel in an effective pixel region according to an embodiment of the present disclosure;
fig. 7 is a schematic structural diagram of a reference pixel in a reference pixel region according to an embodiment of the present application;
fig. 8 is a schematic structural diagram of an electronic device according to an embodiment of the present application.
Detailed Description
In order to make the technical solutions of the present application better understood, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The terms "first," "second," "third," "fourth," and the like in the description and in the claims of the present application and in the drawings described above, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described are capable of operation in sequences other than those illustrated or otherwise described herein.
Moreover, the terms "comprises," "comprising," and any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or modules is not necessarily limited to those steps or modules explicitly listed, but may include other steps or modules not expressly listed or inherent to such process, method, article, or apparatus.
For convenience of understanding and explanation, the image sensor and the electronic device provided in the embodiments of the present application are described in detail below with reference to fig. 1 to 8.
Please refer to fig. 1, which is a schematic structural diagram of an image sensor according to an embodiment of the present disclosure. The image sensor 1 includes a substrate 11, and a first metal interconnection layer 12 and a second metal interconnection layer 13 sequentially formed on the substrate 11. The image sensor 1 in the embodiment of the present application may include, but is not limited to, a CCD image sensor and a CMOS image sensor.
It should be noted that the substrate 11, the first metal interconnection layer 12 and the second metal interconnection layer 13 form a pixel structure, the pixel structure includes an effective pixel region 14 and a reference pixel region 15, and the effective pixel region 14 and the reference pixel region 15 are adjacently arranged. Of course, the reference pixel region 15 may also be disposed around the effective pixel region 14, which is not limited in this embodiment.
The first metal interconnection layer 12 includes a plurality of first transparent regions 121 and first opaque regions 122 located between the first transparent regions 121, and the second metal interconnection layer 13 includes a plurality of second transparent regions 131 and second opaque regions 132 located between the second transparent regions 131. The first light-transmitting region 121 and the second light-transmitting region 131 in the effective pixel region 14 are disposed correspondingly, and the first light-transmitting region 121 and the second light-transmitting region 131 in the reference pixel region 15 are disposed completely offset from each other. That is, the first transparent area 121 in the reference pixel area 15 is disposed corresponding to the second opaque area 132, and the second transparent area 131 in the reference pixel area 15 is disposed corresponding to the first opaque area 122. Therefore, according to the embodiment of the application, the metal wiring in the reference pixel area 15 is changed, so that light incident on the reference pixel is blocked, the position of the reference pixel can be closer to the effective pixel, the distance between the reference pixel and the effective pixel is reduced, meanwhile, the light shielding layer is prevented from being arranged on the reference pixel, the chip height of the image sensor is reduced, the production cost is saved, and the manufacturing process is simplified.
Alternatively, in the actual manufacturing process, the first light-transmitting region 121 is formed by opening on the first metal interconnection layer 12, and the second light-transmitting region 131 is formed by opening on the second metal interconnection layer 13 in the embodiment of the present application. The advantage of this setting is that this application embodiment can improve production efficiency, has simplified manufacturing process even more.
Optionally, in this embodiment of the application, the first light-transmitting area 121 in the reference pixel area 15 is smaller than the first light-transmitting area 121 in the effective pixel area 14, and the second light-transmitting area 131 in the reference pixel area 15 is smaller than the second light-transmitting area 131 in the effective pixel area 14. The advantage of setting up like this is that this application embodiment can further make the position of reference pixel to be closer to the position of effective pixel, has reduced the distance between the two, has saved the manufacturing cost of chip.
Optionally, the thickness of the pixel structure in the effective pixel region 14 in the embodiment of the present application is smaller than that in the reference pixel region 15. For example, the pixel structure has a slope in a portion of the reference pixel region 15.
It should be noted that the pixel structure in the embodiment of the present application further includes a color filter 16 located on the second metal interconnection layer 13 and a plurality of lenses 17 located on the color filter 16, where in the effective pixel region 14, the lenses 17 are disposed corresponding to the first light-transmitting region 121 and the second light-transmitting region 131. And, the pixel structure further includes a photodiode array 18 (not shown in fig. 1), the photodiode array 18 being located on a side of the substrate 11 opposite to the first metal interconnection layer 12, wherein the photodiode array 18 includes a plurality of photodiodes 181, and the photodiodes 181 are disposed corresponding to the first and second light transmission regions 121 and 131 in the effective pixel region 14 to receive light incident from the first and second light transmission regions 121 and 131.
Of course, in other embodiments of the present application, as shown in fig. 2, the pixel structure of the image sensor 1 may further include an invalid pixel region 19, and the invalid pixel region 19 is located between the valid pixel region 14 and the reference pixel region 15. The first light-transmitting area 121 and the second light-transmitting area 131 in the ineffective pixel area 19 are disposed correspondingly. This application embodiment is walked the line through the metal that changes reference pixel region 15, because the light that incides on the reference pixel is blockked, can't reach photodiode to reference pixel is not photosensitive, can accomplish the position that is closer to effective pixel to reference pixel's position based on this kind of mode, has reduced the area that invalid pixel occupies. In the practical production process, the embodiment of the application avoids using the light blocking metal as the light shielding layer of the reference pixel, so that the chip height of 20-30 μm can be reduced. For example, for an image sensor with a chip height of 1800 μm, the embodiment of the application can save 1.1% to 1.6% of the chip area, so that the chip cost can be reduced by more than 1%.
In order to better understand the image sensor in the embodiment of the present application, as shown in fig. 3, it is described by taking an example that the effective pixel region 14, the reference pixel region 15, and the ineffective pixel region 19 are adjacently arranged, and the ineffective pixel region 19 is disposed between the effective pixel region 14 and the reference pixel region 15.
Referring to fig. 4, which is a schematic cross-sectional view of the image sensor AA' shown in fig. 3 in the embodiment of the present application, the effective pixel region 14 is located at the bottom of the trench, and the reference pixel region 15 and the ineffective pixel region 19 are located on a slope formed after the trench is dug, that is, an included angle between a first plane where the reference pixel region 15 is located and a second plane where the effective pixel region 14 is located is an acute angle. It should be noted that the first plane may include a plurality of flat straight planes, in other words, when the first plane includes a plurality of flat straight planes, the included angle between two adjacent straight planes is different. The shorter the optical path of the effective pixel region stacking layer is, the higher the quantum efficiency of the image sensor is, and the better the crosstalk is, especially in the case that the pixel size is smaller and smaller, the larger the influence of the thickness of the pixel region stacking layer on the crosstalk and the like is. Therefore, in the embodiment of the application, the groove is dug in the pixel region, the thickness of the stack layer of the effective pixel region is reduced, and the imaging quality of the image sensor is improved.
Alternatively, as shown in fig. 5, it is an example of the AA' cross-sectional structure shown in fig. 4 in the embodiment of the present application. For example, in the image sensor 1 according to the embodiment of the present application, a Front Side Illumination (FSI) technology is adopted, the effective pixel region 14 is located at the bottom of the trench region, the reference pixel region 15 and the ineffective pixel region 19 are located on a slope formed after the trench is dug, and the three pixel regions are all disposed on the same substrate.
The first metal interconnection layer 12 of the effective pixel region 14 and the first metal interconnection layer 12 of the reference pixel region 15 may be located at the same horizontal position, or certainly may not be located at the same horizontal position. Similarly, the second metal interconnection layer 13 of the effective pixel region 14 and the second metal interconnection layer 13 of the reference pixel region 15 may or may not be located at the same horizontal position. The advantage of this arrangement is that the embodiment of the present application can effectively prevent crosstalk of incident light by using the same number of metal traces in the reference pixel region 15 and the effective pixel region 14.
Optionally, as shown in fig. 6, it is a schematic structural diagram of an effective pixel in the effective pixel region 14 according to an embodiment of the present application. In addition to the first metal interconnection layer 12 and the second metal interconnection layer 13, fig. 6 further includes a first color filter 161, a first lens 171, and a first photodiode 1811, wherein the first lens 171 is used for collecting incident light, the first color filter 161 is used for filtering incident light corresponding to an unwanted wavelength, and the first photodiode 1811 is used for sensing light. It should be noted that the light-transmitting region of the first metal interconnection layer 12 and the light-transmitting region of the second metal interconnection layer 13 in the effective pixel are correspondingly disposed, so that the incident light can reach the first photodiode 1811. In addition, the lens 17 and the color filter 16 of the effective pixels should have good consistency, and the effective pixels in the effective pixel region 14 should be uniformly distributed, so as to better receive incident light and improve the imaging quality of the image sensor.
Optionally, as shown in fig. 7, it is a schematic structural diagram of a reference pixel in the reference pixel region 15 according to an embodiment of the present application. Similarly, fig. 7 includes, in addition to the first metal interconnection layer 12 and the second metal interconnection layer 13, a second color filter 162, a second lens 172, and a second photodiode 1812, wherein the second lens 172 is used for collecting incident light, the second color filter 162 is used for filtering incident light corresponding to an unwanted wavelength, and the second photodiode 1812 is used for sensing light. It should be noted that the light-transmitting region of the first metal interconnection layer 12 and the light-transmitting region of the second metal interconnection layer 13 in the reference pixel are completely offset, so that the incident light cannot pass through and further cannot reach the second photodiode 1812. Therefore, in the embodiment of the present application, the reference pixel region 15 is disposed in the transition region, i.e., the slope formed by grooving, so that the area of the chip is reduced, and the production cost is further saved.
The embodiment of the application provides an image sensor, which comprises a substrate, a first metal interconnection layer and a second metal interconnection layer, wherein the first metal interconnection layer and the second metal interconnection layer are sequentially formed on the substrate, and the substrate, the first metal interconnection layer and the second metal interconnection layer form a pixel structure. The pixel structure comprises an effective pixel area and a reference pixel area, the first metal interconnection layer comprises a plurality of first light transmission areas and first light-tight areas located between the first light transmission areas, the second metal interconnection layer comprises a plurality of second light transmission areas and second light-tight areas located between the second light transmission areas, the first light transmission areas and the second light transmission areas in the effective pixel area are correspondingly arranged, and the first light transmission areas and the second light transmission areas in the reference pixel area are completely arranged in a staggered mode. The embodiment of the application walks the line through the metal that changes the optical reference pixel region, make the light of inciding on the reference pixel blocked, can't reach photodiode, thereby reference pixel array is not photosensitive, can accomplish the position that is closer to effective pixel region to the position of reference pixel region based on this kind of mode, the area that the invalid pixel region was shared has been reduced, image sensor's imaging quality has been improved, the while has also been avoided adopting the metal that is in the light as the light shield layer of optical reference pixel, image sensor's chip height has been reduced, and the production cost is saved, and manufacturing process has been simplified.
Based on the foregoing embodiments, the present application provides an electronic device, which includes the image sensor 1 described above. Please refer to fig. 8, which is a block diagram of an electronic device according to an embodiment of the present disclosure.
The electronic device 801 includes a processor 8011 and a memory 8012, wherein the processor 8011 may include one or more processing cores, such as a 4-core processor, an 8-core processor, and the like. The processor 8011 may be implemented in at least one hardware form of Digital Signal Processing (DSP), Field Programmable Gate Array (FPGA), and Programmable Logic Array (PLA).
In addition, the processor 8011 may be integrated with a Graphics Processing Unit (GPU) for rendering and drawing the content to be displayed on the display screen. In some embodiments, the processor 8011 may also include an Artificial Intelligence (AI) processor for processing computing operations related to machine learning.
The memory 8012 may include one or more computer-readable storage media, which may be non-transitory. The memory 8012 may also include high-speed random access memory, as well as non-volatile memory, such as one or more magnetic disk storage devices, flash memory storage devices.
In some embodiments, the electronic device 801 may also include a peripheral interface 8013 and at least one peripheral. The processor 8011, memory 8012, and peripheral interface 8013 may be coupled via buses or signal lines. Various peripheral devices may be connected to the peripheral interface 8013 via a bus, signal lines, or circuit board.
By way of example, the peripheral devices include at least one of a radio frequency circuit 8014, a display screen 8015, a camera assembly 8016, an audio circuit 8017, and a power supply 8018. The peripheral interface 8013 may be used to connect at least one Input/Output (I/O) related peripheral to the processor 8011 and the memory 8012. In some embodiments, the processor 8011, memory 8012, and peripherals interface 8013 are integrated in the same chip or circuit board; in some other embodiments, any one or both of the processor 8011, the memory 8012 and the peripherals interface 8013 may be implemented on a single chip or circuit board, which is not limited in this embodiment.
The Radio Frequency circuit 8014 is configured to receive and transmit Radio Frequency (RF) signals, also referred to as electromagnetic signals. The rf circuit 8014 communicates with the communications network and other communications devices via electromagnetic signals. The rf circuit 8014 converts electrical signals into electromagnetic signals for transmission, or converts received electromagnetic signals into electrical signals. Optionally, the radio frequency circuit 8014 includes an antenna system, an RF transceiver, one or more amplifiers, tuners, oscillators, digital signal processors, codec chipsets, subscriber identity module cards, and so forth. The rf circuit 8014 may communicate with other devices via at least one wireless communication protocol. The Wireless communication protocol includes, but is not limited to, a metropolitan area network, various generations of mobile communication networks (2G, 3G, 4G, and 5G), a Wireless local area network, and/or a Wireless Fidelity (WiFi) network. In some embodiments, radio frequency circuitry 8014 may also include Near Field Communication (NFC) related circuitry.
The display screen 8015 is used to display a User Interface (UI). The UI may include graphics, text, icons, video, and any combination thereof. When the display screen 8015 is a touch display screen, the display screen 8015 also has the ability to capture touch signals on or over the surface of the display screen 8015. The touch signal may be input to the processor 8011 as a control signal for processing. At this point, the display screen 8015 may also be used to provide virtual buttons and/or a virtual keyboard, also referred to as soft buttons and/or a soft keyboard. In some embodiments, the display screen 8015 may be one, provided on the front panel of the electronic device 801; in other embodiments, the display screens 8015 may be at least two, each disposed on a different surface of the electronic device 801 or in a folded design; in still other embodiments, the display 8015 may be a flexible display disposed on a curved surface or a folded surface of the electronic device 801. Even further, the display screen 8015 may be arranged in a non-rectangular irregular figure, i.e. a shaped screen. The Display screen 8015 may be made of Liquid Crystal Display (LCD), Organic Light-Emitting Diode (OLED), or the like.
The camera assembly 8016 comprises the image sensor 1 described above for capturing images or video. Optionally, the camera assembly 8016 includes a front camera and a rear camera. Generally, a front camera is disposed on a front panel of the apparatus, and a rear camera is disposed on a rear surface of the apparatus. In some embodiments, the number of the rear cameras is at least two, and each rear camera is any one of a main camera, a depth-of-field camera, a wide-angle camera and a telephoto camera, so that the main camera and the depth-of-field camera are fused to realize a background blurring function, and the main camera and the wide-angle camera are fused to realize panoramic shooting and a Virtual Reality (VR) shooting function or other fusion shooting functions. In some embodiments, the camera assembly 8016 may also include a flash. The flash lamp can be a monochrome temperature flash lamp or a bicolor temperature flash lamp. The double-color-temperature flash lamp is a combination of a warm-light flash lamp and a cold-light flash lamp, and can be used for light compensation at different color temperatures.
The audio circuit 8017 may include a microphone and a speaker. The microphone is used for collecting sound waves of a user and the environment, converting the sound waves into electric signals, and inputting the electric signals to the processor 8011 for processing, or inputting the electric signals to the radio frequency circuit 8014 for realizing voice communication. For the purpose of stereo sound collection or noise reduction, a plurality of microphones may be provided at different positions of the electronic device 801. The microphone may also be an array microphone or an omni-directional pick-up microphone. The speaker is used to convert electrical signals from the processor 8011 or the radio frequency circuitry 8014 into sound waves. The loudspeaker can be a traditional film loudspeaker or a piezoelectric ceramic loudspeaker. When the speaker is a piezoelectric ceramic speaker, the speaker can be used for purposes such as converting an electric signal into a sound wave audible to a human being, or converting an electric signal into a sound wave inaudible to a human being to measure a distance. In some embodiments, the audio circuit 8017 may also include a headphone jack.
A power supply 8018 is used to power the various components in the electronic device 801. Power supply 8018 may be an alternating current, direct current, disposable battery, or rechargeable battery. When power source 8018 includes a rechargeable battery, the rechargeable battery may support wired or wireless charging. The rechargeable battery may also be used to support fast charge technology.
In some embodiments, the electronic device 801 further includes one or more sensors 8019. The one or more sensors 8019 include, but are not limited to, an acceleration sensor 8020, a gyroscope sensor 8021, a pressure sensor 8022, a fingerprint sensor 8023, an optical sensor 8024, and a proximity sensor 8025.
Those skilled in the art will appreciate that the configuration shown in FIG. 8 does not constitute a limitation of the electronic device 801, and may include more or fewer components than those shown, or combine certain components, or employ a different arrangement of components.
It can be clearly understood by those skilled in the art that, for convenience and brevity of description, the specific working processes of the system, the apparatus and the module described above may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
In the several embodiments provided in the present application, it should be understood that the disclosed system, apparatus and method may be implemented in other manners. For example, the above-described apparatus embodiments are merely illustrative, and for example, the division of the modules is merely a logical division, and in actual implementation, there may be other divisions, for example, multiple modules or components may be combined or integrated into another system, or some features may be omitted, or not implemented. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or modules, and may be in an electrical, mechanical or other form. Modules described as separate parts may or may not be physically separate, and parts displayed as modules may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of the present embodiment.
In addition, functional modules in the embodiments of the present application may be integrated into one processing unit, or each module may exist alone physically, or two or more units are integrated into one module. The integrated unit can be realized in a form of hardware, and can also be realized in a form of a software functional unit. The integrated unit, if implemented as a software functional unit and sold or used as a separate product, may be stored in a computer readable storage medium.
Based on this understanding, the technical solutions of the present application may be embodied in the form of a software product, which is stored in a storage medium, or in a part of or all of the technical solutions that contribute to the prior art. And the aforementioned storage medium includes: various media capable of storing program codes, such as a usb disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk, or an optical disk.
It should be noted that the above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions in the embodiments of the present application.
Claims (10)
1. An image sensor includes a substrate, and a first metal interconnection layer and a second metal interconnection layer sequentially formed on the substrate;
the substrate, the first metal interconnection layer and the second metal interconnection layer form a pixel structure, and the pixel structure comprises an effective pixel area and a reference pixel area;
the first metal interconnection layer comprises a plurality of first light-transmitting areas and first light-tight areas positioned between the first light-transmitting areas, and the second metal interconnection layer comprises a plurality of second light-transmitting areas and second light-tight areas positioned between the second light-transmitting areas;
the first light-transmitting area and the second light-transmitting area in the effective pixel area are correspondingly arranged; the first light-transmitting region and the second light-transmitting region in the reference pixel region are completely displaced.
2. The image sensor as claimed in claim 1, wherein the first light-transmissive region in the reference pixel region is disposed corresponding to the second light-opaque region, and the second light-transmissive region in the reference pixel region is disposed corresponding to the first light-opaque region.
3. The image sensor according to claim 1, wherein the first light-transmitting region is formed by opening on the first metal interconnect layer, and the second light-transmitting region is formed by opening on the second metal interconnect layer.
4. The image sensor of claim 1, wherein the first light-transmissive region within the reference pixel region is smaller than the first light-transmissive region within the active pixel region, and wherein the second light-transmissive region within the reference pixel region is smaller than the second light-transmissive region within the active pixel region.
5. The image sensor of claim 1, wherein the pixel structure further comprises an inactive pixel region located between the active pixel region and the reference pixel region;
the first light-transmitting area and the second light-transmitting area in the ineffective pixel area are correspondingly arranged.
6. The image sensor of claim 1, wherein the pixel structure has a thickness in the active pixel region that is less than a thickness in the reference pixel region.
7. The image sensor of claim 6, wherein the pixel structure has a slope in a portion of the reference pixel region.
8. The image sensor of claim 1, wherein the pixel structure further comprises a color filter on the second metal interconnect layer, and a plurality of lenses on the color filter;
in the effective pixel region, the lens is disposed corresponding to the first light-transmitting region and the second light-transmitting region.
9. The image sensor of claim 1, wherein the pixel structure further comprises a photodiode array on a side of the substrate opposite the first metal interconnect layer;
the photodiode array includes a plurality of photodiodes, and the photodiodes are disposed corresponding to the first and second light-transmitting regions in the effective pixel region to receive light incident from the first and second light-transmitting regions.
10. An electronic device, characterized in that it comprises at least one image sensor according to any one of claims 1 to 9.
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| CN202010245281.2A CN113471226A (en) | 2020-03-31 | 2020-03-31 | Image sensor and electronic equipment |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101183671A (en) * | 2006-11-15 | 2008-05-21 | 国际商业机器公司 | Image sensor including spatially different active and dark pixel interconnect patterns |
| JP2008306096A (en) * | 2007-06-11 | 2008-12-18 | Toshiba Corp | Solid-state image pickup device and manufacturing method of the same |
| CN101800233A (en) * | 2009-02-10 | 2010-08-11 | 索尼公司 | Solid state image pickup device and manufacture method thereof and electronic equipment |
| CN102194844A (en) * | 2010-03-17 | 2011-09-21 | 佳能株式会社 | Solid-state image sensor |
| CN103369263A (en) * | 2012-03-28 | 2013-10-23 | 全视科技有限公司 | System, apparatus and method for dark current correction |
| CN109786416A (en) * | 2019-03-25 | 2019-05-21 | 德淮半导体有限公司 | Back side illumination image sensor and its manufacturing method |
-
2020
- 2020-03-31 CN CN202010245281.2A patent/CN113471226A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101183671A (en) * | 2006-11-15 | 2008-05-21 | 国际商业机器公司 | Image sensor including spatially different active and dark pixel interconnect patterns |
| JP2008306096A (en) * | 2007-06-11 | 2008-12-18 | Toshiba Corp | Solid-state image pickup device and manufacturing method of the same |
| CN101800233A (en) * | 2009-02-10 | 2010-08-11 | 索尼公司 | Solid state image pickup device and manufacture method thereof and electronic equipment |
| CN102194844A (en) * | 2010-03-17 | 2011-09-21 | 佳能株式会社 | Solid-state image sensor |
| CN103369263A (en) * | 2012-03-28 | 2013-10-23 | 全视科技有限公司 | System, apparatus and method for dark current correction |
| CN109786416A (en) * | 2019-03-25 | 2019-05-21 | 德淮半导体有限公司 | Back side illumination image sensor and its manufacturing method |
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