CN113466972A

CN113466972A - Infrared anti-reflection lens and related assembly and equipment

Info

Publication number: CN113466972A
Application number: CN202010245922.4A
Authority: CN
Inventors: 林耿; 黄义宏
Original assignee: Huawei Technologies Co Ltd
Current assignee: Huawei Technologies Co Ltd
Priority date: 2020-03-31
Filing date: 2020-03-31
Publication date: 2021-10-01

Abstract

An infrared anti-reflection lens and related subassembly, equipment, this lens can be applied to electronic equipment or temperature measurement subassembly to make electronic equipment realize the function of temperature measurement, this lens includes: the infrared antireflection film comprises a substrate, a first infrared antireflection film and an infrared hard film which are arranged in a laminated manner; the first infrared antireflection film is arranged on the first surface of the substrate, the substrate and the first infrared antireflection film are both positioned on the same side of the infrared hard film, and the transmissivity of the infrared hard film to infrared light in a target wavelength range is larger than a first threshold value. In the using process of the lens, one side of the lens, which is adjacent to the infrared hard film, is exposed to the external environment, so that the infrared hard film can enhance the hardness of the surface of the lens while transmitting infrared light, and the scratch resistance and wear resistance of the lens are improved, and further the lens can be better applied to electronic equipment with high requirements on wear resistance and scratch resistance.

Description

Infrared anti-reflection lens and related assembly and equipment

Technical Field

The invention relates to the technical field of infrared, in particular to an infrared anti-reflection lens and related components and equipment.

Background

At present, the demand of people for electronic equipment with a temperature measuring function is increasing day by day. The non-contact type temperature measuring meter is not in contact with the measured object, and the temperature measurement is fast and popular with consumers. The principle of the non-contact type temperature measurer is as follows: all objects above absolute zero can radiate infrared rays by themselves, the temperature measuring device receives the infrared rays emitted by the objects and converts the infrared rays into electric signals, the magnitude of infrared radiation energy is related to the temperature of the objects, and the temperature of the objects can be determined according to the magnitude of the converted electric signals.

When electronic equipment used in daily life needs to integrate a temperature measuring device to realize a temperature measuring function, the optical lens of the electronic equipment not only needs to meet the requirement of high transmissivity on a broadband infrared light region, but also needs to meet the requirements of some extreme scenes in daily life, such as enough mechanical strength, certain acid-base-corrosion resistance and the like.

How to improve the hardness and the corrosion resistance of the infrared optical lens is a technical problem which needs to be solved if a temperature measuring device is used on electronic equipment.

Disclosure of Invention

The embodiment of the application provides an infrared anti-reflection lens, a related component and related equipment, and the infrared anti-reflection lens can be better applied to electronic equipment such as a mobile phone and the like by adding an infrared hard film outside the infrared anti-reflection lens and improving the hardness and the corrosion resistance of the infrared optical lens.

In a first aspect, an embodiment of the present application provides an infrared anti-reflection lens, including: the infrared antireflection film comprises a substrate, a first infrared antireflection film and an infrared hard film which are arranged in a laminated manner; the first infrared antireflection film is arranged on the first surface of the substrate, the substrate and the first infrared antireflection film are both positioned on the same side of the infrared hard film, and the transmissivity of the infrared hard film to infrared light in a target wavelength range is larger than a first threshold value, so that the infrared light in the target wavelength range can penetrate through the infrared antireflection lens.

Alternatively, the above-mentioned target wavelength range may be a wavelength range of infrared light emitted from a human body, for example, 3 μm to 50 μm.

Alternatively, the larger the first threshold value, the better, the first threshold value may be any value within 0.1-1.

In the using process of the lens, one side of the lens, which is adjacent to the infrared hard film, is exposed to the external environment, so that the infrared hard film can enhance the hardness of the surface of the lens while transmitting infrared light, and the scratch resistance and wear resistance of the lens are improved, and further the lens can be better applied to electronic equipment with high requirements on wear resistance and scratch resistance.

In one possible implementation, the infrared hard coating is disposed on a surface of the first infrared antireflection film away from the substrate, and the hardness of the infrared hard coating is not less than the hardness of the first infrared antireflection film.

In the lens, the infrared hardening film is arranged on the surface of the first infrared antireflection film to protect the first infrared antireflection film and avoid the reduction of the transmittance of infrared light caused by the abrasion of the infrared antireflection film.

Optionally, the refractive index of the infrared hardening film for infrared light in the target wavelength range is less than or equal to the refractive index of the first infrared antireflection film for the infrared light. The preset value may be any value within the range of 0.01 to 0.1.

Optionally, a difference between a refractive index of the infrared hardening film for infrared light in the target wavelength range and a refractive index of the first infrared antireflection film for the infrared light is smaller than a preset value.

In the lens, the infrared hardening film can play a role in infrared light reflection increasing while protecting the first infrared reflection increasing film.

Optionally, the infrared antireflection lens may further include a second infrared antireflection film disposed on the second surface of the substrate, where the first surface and the second surface are two surfaces disposed opposite to each other on the substrate.

According to the lens, the infrared antireflection films are arranged on the two surfaces of the substrate, so that the transmittance of the lens to infrared light is improved.

In another possible implementation, the infrared hardened film is disposed on a second surface of the substrate, the first surface and the second surface are two oppositely disposed surfaces of the substrate, and the hardness of the infrared hard film is not less than that of the substrate.

The infrared hardening film is arranged on the surface of the substrate to protect the substrate and prevent the substrate from being abraded.

In another possible implementation, the first infrared antireflection film includes N antireflection layers, where N is a positive integer greater than 1.

According to the lens, the first infrared antireflection film adopts the design of the multiple antireflection layers, so that the antireflection range of the lens on infrared light can be increased, and the lens has higher transmittance in a wide infrared wavelength range.

Optionally, the difference between the refractive index of the target antireflection layer and the refractive index of the infrared hard coating in the N antireflection layers is not greater than a preset value, or the refractive index of the target antireflection layer is greater than the refractive index of the infrared hard coating, and the target antireflection layer is an antireflection layer connected with the infrared hard coating in the N antireflection layers. The preset value may be any value within the range of 0.01 to 0.1.

For example, N is 4, the N antireflection layers include a first antireflection layer, a second antireflection layer, a third antireflection layer, and a fourth antireflection layer sequentially stacked on the first surface, the first antireflection layer is made of zinc sulfide or zinc selenide, the second antireflection layer is made of silicon or germanium, the third antireflection layer is made of zinc sulfide or zinc selenide, and the fourth antireflection layer is made of at least one of yttrium fluoride, ytterbium fluoride, and calcium fluoride.

Optionally, the thickness of the first anti-reflection layer is 40-800 nm, the thickness of the second anti-reflection layer is 30-900 nm, the thickness of the third anti-reflection layer is 40-800 nm, and the thickness of the fourth anti-reflection layer is 50-600 nm.

In one possible implementation, the infrared anti-reflection lens further comprises a fingerprint-proof film, and the fingerprint-proof film is arranged on the surface of the infrared hardening film, which is far away from the substrate.

Optionally, the anti-fingerprint film is made of at least one of perfluoropolyether siloxane, polytetrafluoroethylene materials or aliphatic siloxane materials, and the thickness of the anti-fingerprint film is 2nm-50 nm.

Above-mentioned lens can realize preventing the fingerprint effect of lens, avoids the lens to be contaminated in the use.

In one possible implementation, the material of the infrared hardened film is at least one of diamond-like carbon, silicon and germanium, and the thickness of the red plus hard film is 5nm-300 nm.

The lens uses diamond-like carbon, silicon, germanium and other materials with high hardness as the infrared hard film, so that the transmittance of the lens to infrared light is ensured, and the hardness of the lens is improved.

In one possible implementation, the material of the substrate is silicon or germanium, and the thickness of the substrate is 0.2-2.0 mm.

According to the lens, silicon or germanium is used as a substrate material, the silicon or germanium has high transmittance to infrared light, high hardness and good flexibility, and the service life of the lens can be prolonged.

In a second aspect, an embodiment of the present application further provides an infrared anti-reflection lens, including: the substrate, the first infrared antireflection film and the anti-fingerprint film are arranged in a laminated mode; the first infrared antireflection film is arranged on the first surface of the substrate, and the substrate and the first infrared antireflection film are both positioned on the same side of the fingerprint preventing film.

In the use of above-mentioned lens, prevent that one side of fingerprint membrane from revealing in the external environment, can realize preventing the fingerprint effect of lens, avoid the lens to be contaminated in the use.

In one possible implementation, the anti-fingerprint film is arranged on the surface of the first infrared antireflection film, which faces away from the substrate.

In the lens, the anti-fingerprint film is arranged on the surface of the first infrared antireflection film to protect the first infrared antireflection film and prevent the infrared antireflection film from being polluted to reduce the transmittance of infrared light.

In one possible implementation, the infrared antireflection lens further includes an infrared hard coating, the infrared hard coating is disposed on a surface of the first infrared antireflection film away from the substrate, hardness of the infrared hard coating is greater than that of the first infrared antireflection film, and the fingerprint prevention film is disposed on a surface of the infrared hard coating away from the substrate.

In one possible implementation, the anti-fingerprint film is disposed on a second surface of the substrate, wherein the first surface and the second surface are two surfaces disposed opposite to each other on the substrate.

In a third aspect, an embodiment of the present application further provides a method for manufacturing a lens, where the method includes:

providing a substrate;

forming a first infrared antireflection film on the first surface of the substrate;

and forming a red-plus-hard film, wherein the substrate and the first infrared antireflection film are both positioned on the same side of the red-plus-hard film, and the transmissivity of the red-plus-hard film to infrared light in a target wavelength range is greater than a first threshold value.

In one possible implementation, the forming red-added hard films includes: and forming an infrared hard film on the surface of the first infrared antireflection film, which is far away from the substrate, wherein the hardness of the infrared hard film is greater than that of the first infrared antireflection film.

In one possible implementation, the forming red-added hard films includes: and forming a red-added hard film on the second surface of the substrate.

In one possible implementation, the method further comprises: and forming an anti-fingerprint film on the surface of the infrared hardening film, which is far away from the substrate.

Wherein forming a first infrared antireflective film on the first surface of the substrate comprises: and forming N layers of antireflection layers on the first surface of the substrate to obtain a first infrared antireflection film, wherein N is a positive integer greater than 1.

Optionally, the difference between the refractive index of the target antireflection layer and the refractive index of the infrared hard coating in the N antireflection layers is not greater than a preset value, or the refractive index of the target antireflection layer is greater than the refractive index of the infrared hard coating, and the target antireflection layer is an antireflection layer connected with the infrared hard coating in the N antireflection layers.

Optionally, the forming of the N antireflection layers on the first surface of the substrate includes: a first anti-reflection layer, a second anti-reflection layer, a third anti-reflection layer and a fourth anti-reflection layer are sequentially formed on the first surface of the substrate, the first anti-reflection layer is made of zinc sulfide or zinc selenide, the second anti-reflection layer is made of silicon or germanium, the third anti-reflection layer is made of zinc sulfide or zinc selenide, and the fourth anti-reflection layer is made of at least one of yttrium fluoride, ytterbium fluoride and calcium fluoride.

In a fourth aspect, an embodiment of the present application further provides a temperature measurement module, which includes a package, an infrared sensor, and an infrared reflection-increasing lens prepared according to the first aspect, the second aspect, or the third aspect, where the package is used to fix the infrared reflection-increasing lens and the infrared sensor, infrared light is transmitted to the infrared sensor through the infrared reflection-increasing lens, and the infrared sensor is used to receive the infrared light.

In a fifth aspect, an embodiment of the present application further provides an electronic device, which includes a processor, a memory, and any one of the temperature measurement modules described in the fourth aspect.

The processor is used for calling the program instructions stored in the memory and identifying the temperature of the object to be temperature-measured through the temperature-measuring module.

In a sixth aspect, an embodiment of the present application further provides a housing of an electronic device, including: the lens comprises a shell and the infrared anti-reflection lens in the first aspect, the infrared anti-reflection lens in the second aspect or the infrared anti-reflection lens prepared in the third aspect, wherein the shell comprises a temperature measurement module hole, and the infrared anti-reflection lens is fixed in the temperature measurement module hole.

Optionally, the case further includes a glass lens, the case includes a camera hole, the glass lens is fixed in the camera hole, the glass lens includes the temperature measurement module hole, and the infrared anti-reflection lens is fixed in the temperature measurement module hole.

It should be understood that the housing may be a rear case of a mobile phone, a housing of a temperature detector, etc., and is not limited thereto.

It can be understood that the temperature measurement module, the electronic device and the housing provided above all include the infrared anti-reflection lens of the first aspect, the infrared anti-reflection lens of the second aspect or the infrared anti-reflection lens prepared by the preparation method of the third aspect. Therefore, the advantageous effects achieved by the method can refer to the advantageous effects of the first aspect, and are not described herein again.

Drawings

Fig. 1 is a schematic structural diagram of a housing of an electronic device according to an embodiment of the present disclosure;

fig. 2 is a schematic structural diagram of an electronic device according to an embodiment of the present application;

fig. 3 is a schematic structural diagram of a temperature measurement module according to an embodiment of the present disclosure;

FIGS. 4-10 are schematic structural views of several lenses provided by embodiments of the present application;

FIGS. 11-13 are schematic cross-sectional views of several lenses provided by embodiments of the present application;

FIG. 14 is a schematic flow chart of a method for preparing a lens according to an embodiment of the present disclosure;

FIG. 15A is a graph illustrating the infrared transmission of a lens according to embodiments of the present disclosure;

fig. 15B is a schematic illustration of the water drop angle before and after rubbing of a lens according to an embodiment of the present application.

Detailed Description

The terminology used in the following embodiments of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the present application. As used in the specification of the present application and the appended claims, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any and all possible combinations of one or more of the listed items.

First, concepts and terms related to the embodiments of the present application will be described.

(1) Hardness, hardness

Refers to the ability of a material to locally resist the penetration of hard objects into its surface, a property of a solid material to resist permanent deformation. The hardness in the examples of the present application may also be referred to as rockwell hardness, vickers hardness, brinell hardness, microhardness, knoop hardness, shore hardness.

(2) And an antireflection film

The antireflection film may also be referred to as an antireflection film. The principle of the antireflection film is to reduce reflection at the lens interface. In the embodiment of the application, the main function of the infrared antireflection film is to reduce or eliminate the reflection of light in the infrared range on the surface of the substrate of the lens, so as to increase the transmission amount of infrared light for the lens. The infrared antireflection film of the infrared antireflection lens provided in this embodiment is closely attached to the surface of the substrate, and is used to increase the transmittance of infrared light.

(3) High, medium, low refractive index

The refractive index, which is the ratio of the propagation speed of light in vacuum to the propagation speed of light in the medium, is higher, and the higher the refractive index of the medium is, the stronger the ability to refract incident light is. Light with longer wavelengths has a smaller refractive index in the medium, and the propagation velocity is higher.

For a fixed wavelength infrared light, the ordering of the refractive indices of the various materials to which the present application relates is described below: the refractive index of silicon, germanium, etc. > the refractive index of diamond, zinc selenide, zinc sulfide, etc. > the refractive index of fluoride.

Among them, fluorides having a high level of infrared light include: yttrium fluoride, ytterbium fluoride, gadolinium fluoride, yttrium barium fluoride, magnesium fluoride, lanthanum fluoride, cerium fluoride, praseodymium fluoride, neodymium fluoride, dysprosium fluoride, and the like. The refractive index of each fluoride pair is similar in the infrared wavelength range.

In the embodiment of the present application, the high refractive index, the medium refractive index and the low refractive index are relative. For example, the refractive index of material a is greater than the refractive index of material B, and thus the refractive index of material a is referred to as the high refractive index and the refractive index of material B is referred to as the low refractive index. For another example, if the refractive index of material a is greater than the refractive index of material B, and the refractive index of material B is greater than the refractive index of material C, then the refractive index of material a is referred to as the high refractive index, the refractive index of material B is the medium refractive index, and the refractive index of material C is referred to as the low refractive index.

The embodiment of the application provides an infrared anti-reflection lens, which can be arranged on a shell of an electronic product and also can be applied to the electronic product or a temperature measurement module to realize that infrared light can highly penetrate through the lens and provide support for the electronic product to realize functions of temperature measurement, infrared imaging and the like.

On the one hand, electronic equipment in this application embodiment can be called the thermoscope, and this thermoscope can be the infrared ear thermometer, infrared forehead thermometer, infrared thermal imager etc. that possess above-mentioned infrared anti-reflection lens or above-mentioned temperature measurement module.

On the other hand, in the embodiment of the present application, the electronic device may also be referred to as a terminal, a terminal device, a User Equipment (UE), and the like, and the electronic device is a mobile phone, a tablet computer, a notebook computer, an ultra-mobile personal computer (UMPC), a netbook, a Personal Digital Assistant (PDA), an On Board Unit (OBU), a wearable device (e.g., a watch, a bracelet, an intelligent helmet, and the like), an intelligent home device (e.g., an electric cooker, a stereo, a home manager device, and the like), an Augmented Reality (AR)/Virtual Reality (VR) device, and the like, which are equipped with the infrared reflection reducing lens or the temperature measuring module.

The components and devices related to the embodiments of the present application are described below. Respectively including the shell of electronic equipment, this electronic equipment and temperature measurement module.

First, an embodiment of the present application provides an electronic device case, where the case includes a case body and an infrared anti-reflection lens, the case body includes a temperature measurement module hole, and the infrared anti-reflection lens is fixed in the temperature measurement module hole.

In one implementation, the housing may be a cell phone back case, also referred to as a cell phone back cover. As shown in fig. 1, which is a schematic structural diagram of a mobile phone rear case provided in an embodiment of the present application, the case 1000 includes a case 1001, a glass lens 1002, and an infrared reflection reducing lens 1003. Wherein, be equipped with camera hole 10011 on the casing 1001, in glass lens 1002 was fixed in camera hole 10011, glass lens 10011 was including running through this glass lens 10011's temperature measurement module hole 10012, and infrared anti-reflection lens 1003 sets up in this temperature measurement module hole 10012. Optionally, the infrared anti-reflection lens 1003 can be fixed in the temperature measurement module hole 10012 of the glass lens 1002.

In another embodiment, the infrared anti-reflection lens can be arranged at other positions of the rear shell instead of being embedded in the glass lens. For example, the rear housing may include a temperature measurement module hole, and the infrared anti-reflection lens may be fixed in the temperature measurement module hole through a packaging material.

After the mobile phone rear shell is assembled into a mobile phone, the glass lens can be arranged opposite to a camera module fixed on a middle frame of the mobile phone, and at the moment, the glass lens covers a rear camera of the mobile phone; the infrared anti-reflection lens can be arranged opposite to the infrared sensor fixed on the middle frame of the mobile phone, and at the moment, the infrared anti-reflection lens covers the infrared sensor of the mobile phone.

Optionally, fig. 1 is only a schematic illustration, and the infrared antireflection lens may also be disposed at other positions of other mobile phone backshells, or may also be disposed at other positions of a shell of an electronic device, which is not limited to this.

After the shell of the electronic equipment is assembled to obtain the electronic equipment, the electronic equipment can realize temperature measurement and infrared imaging based on the infrared temperature measurement principle.

Referring to fig. 2, fig. 2 is a schematic structural diagram of an electronic device according to an embodiment of the present disclosure, where the electronic device 1200 may include a processor 1201, a memory 1202, a temperature measuring module 1203, a display 1204, an audio component 1205, and the like, where the memory 1202, the temperature measuring module 1203, the display 1204, and the audio component 1205 are coupled to the processor 1201, the display 1204 may be used to display temperature, and the audio component 1205 may be used for inputting or outputting voice.

The processor 1201 may be one or more Central Processing Units (CPUs), and in the case that the processor 1201 is one CPU, the CPU may be a single-core CPU or a multi-core CPU.

Memory 1202 may be used to store computer-executable program code, which includes instructions. The processor 1201 executes various functional applications of the electronic device 120 and detects the temperature of the object to be detected by the thermometry module 1203 by executing instructions stored in the internal memory 1202. Further, the temperature may be output via the display 1204 or the audio component 1205.

For example, the electronic device 1200 may receive infrared light of the object to be measured through the temperature measurement module, and identify the temperature of the object to be measured according to the intensity of the electrical signal obtained by converting the infrared light. The object to be measured may be a human body or a part of the human body, such as a wrist, a forehead, an ear, etc. Further, the electronic apparatus 1200 may generate an image based on the obtained temperature distribution of the temperature measurement object.

It should be understood that although the electronic device shown in fig. 2 includes a display and audio components, etc., in other embodiments of the present application, the electronic device may not include the display or audio components described above.

It should be understood that the connection relationship between the modules according to the embodiment of the present invention is only illustrative, and does not limit the structure of the electronic apparatus 1200. In other embodiments of the present application, the electronic device 1200 may also adopt different connection manners or a combination of multiple connection manners in the above embodiments.

It is to be understood that the illustrated structure of the embodiment of the invention is not intended to limit the electronic device 1200. In other embodiments of the present application, the electronic device 1200 may include more or fewer components than illustrated, or some components may be combined, some components may be split, or a different arrangement of components. The illustrated components may be implemented in hardware, software, or a combination of software and hardware.

As shown in fig. 3, which is a schematic structural diagram of a temperature measurement module 1300 according to an embodiment of the present disclosure, the temperature measurement module 1300 may include a package 1301, an infrared anti-reflection lens 1302, and an infrared sensor 1304, where the package 1301 is used to fix the infrared anti-reflection lens 1302 and the infrared sensor 1303; the infrared light is transmitted through infrared anti-reflective lens 1302 to infrared sensor 1304, and infrared sensor 1304 is configured to receive the infrared light transmitted thereto. It should be understood that the intensity of the infrared light emitted by an object may also be indicative of the temperature of the object

In order to make infrared anti-reflection lens 1302 better applicable to electronic devices, in the embodiment of the present application, an infrared hard film or an anti-fingerprint film is added on the surface of the infrared anti-reflection lens, and in the use process of temperature measurement module 1300, the film layer exposed in the external environment of infrared anti-reflection lens 1302 is the infrared hard film or the anti-fingerprint film. And then prevent that the lens from being polluted by fish tail and fingerprint, when guaranteeing the throw ratio of infrared light, improve the hardness of module and the accuracy of temperature measurement.

The following describes an infrared anti-reflection lens and a manufacturing method thereof according to an embodiment of the present application with reference to the accompanying drawings, where the infrared anti-reflection lens or the prepared infrared anti-reflection lens has an anti-reflection effect on infrared light, and may be applied to the technical fields of infrared temperature measurement, infrared imaging, and the like, and in particular, may be applied to a housing of the electronic device shown in fig. 1, the electronic device shown in fig. 2, or the temperature measurement module shown in fig. 3. First, several infrared reflection reducing lenses provided in the examples of the present application are described by seven examples, respectively.

The first embodiment is as follows:

fig. 4 (a) is a schematic perspective view of an infrared anti-reflection lens 10 according to an embodiment of the present disclosure, and (B) is a schematic cross-sectional view of the lens 10 shown in fig. a taken along a plane a-B. The lens 10 includes at least: a substrate 11, a first infrared antireflection film 12, and an infrared hardening film 13 which are stacked; the first infrared antireflection film 12 is disposed on the first surface 111 of the substrate 11, the substrate 11 and the first infrared antireflection film 12 are both located on the same side of the infrared hard mask 13, and the transmittance of the infrared hard mask 13 to infrared light in a target wavelength range is greater than a first threshold value. In the using process of the lens 10, the surface of one side of the lens 10 adjacent to the infrared hard film 13 is exposed to the external environment, so that the infrared hard film 13 can enhance the hardness of the surface of the lens 10 while transmitting infrared light, and the scratch resistance and wear resistance of the lens 10 are improved, thereby enabling the lens 10 to be better applied to electronic equipment with high requirements on wear resistance and scratch resistance.

It should be noted that the infrared anti-reflective lens 10 in fig. 4 is referred to as an infrared anti-reflective lens 1302.

In the embodiment of the present application, the infrared hardening film 13 has a certain transmission capability for infrared light in a target wavelength range, and the hardness thereof is not less than the hardness of the infrared antireflection film 12 connected thereto or the hardness of the substrate 11. The target wavelength range may be a wavelength range of infrared rays emitted from a human body, such as 3 μm to 50 μm, or a wavelength range in which energy is concentrated in infrared rays emitted from a human body, such as 6 μm to 14 μm. Other infrared wavelength ranges are also possible. The first threshold may be a value greater than 0 and less than 1, for example, a value of 0.3, 0.5, 0.6, 0.75, 0.8, 0.9, etc.

Wherein the surface of the substrate 11 includes two oppositely disposed surfaces, namely a first surface 111 and a second surface 112. It should be understood that FIG. 4 illustrates an example where infrared hardening film 13 is disposed on the surface of first infrared antireflection film 12 facing away from substrate 11.

Optionally, the lens 10 may also include an anti-fingerprint film. The anti-fingerprint film is arranged on one surface of the infrared hardening layer, which is deviated from the substrate, so that the anti-fingerprint film is exposed in the environment, and further, in the use process of the lens, the infrared transmittance is reduced due to the fact that the infrared hardening film is polluted by fingerprints.

However, in other embodiments, infrared-stiffened film 13 may be disposed in other locations; the second surface 112 of the substrate 11 may also include a second infrared antireflection film and the lens may also include only an anti-fingerprint film and not the infrared plus hard coat 13. The following is presented by way of six examples, respectively:

example two:

fig. 5 shows a lens 20, wherein (a) is a schematic perspective view of an infrared anti-reflection lens 20 according to an embodiment of the present disclosure, and (B) is a schematic cross-sectional view of the lens 20 shown in (a) along a plane a-B. The infrared hard coat film 13 is disposed on the surface of the first infrared antireflection film 12 away from the substrate. At this time, the first infrared ray intensifying lens film 12, the infrared hardening film 13, and the anti-fingerprint film 14 may be sequentially stacked and disposed on the first surface 111 of the substrate 11. The hardness of the infrared hard coat 13 is not less than the hardness of the first infrared antireflection film 13, so that the first infrared antireflection film 13 is protected from being scratched in the using process.

Example three:

fig. 6 shows a lens 30, wherein (a) is a schematic perspective view of an infrared anti-reflection lens 30 according to an embodiment of the present disclosure, and (B) is a schematic cross-sectional view of the lens 30 shown in (a) along a plane a-B. With respect to the lens shown in FIG. 5, the lens 30 further includes a second infrared anti-reflection film 15, and the second infrared anti-reflection film 15 is disposed on the second surface 112 of the substrate 11.

Example four:

fig. 7 shows a lens 40, wherein (a) is a schematic perspective view of an infrared anti-reflection lens 40 according to an embodiment of the present disclosure, and (B) is a schematic cross-sectional view of the lens 40 shown in (a) along a plane a-B. The hard red addition film 13 is disposed on the second surface 113 of the substrate 11. At this time, the infrared hardening film 13 and the anti-fingerprint film 14 may be sequentially stacked and disposed on the second surface 112 of the substrate 11, and at this time, the hardness of the infrared hardening film 13 is not less than that of the substrate 11 to protect the substrate 11.

In this embodiment, the infrared-hardening film 13 covers the second surface 112 of the substrate 11, and when the lens is used, one side of the anti-fingerprint film is exposed to the environment, so that the infrared-hardening film 13 can be prevented from being directly exposed to the environment to improve the hardness of the lens, and on the other hand, the anti-fingerprint film 14 can prevent the infrared transmittance from being reduced due to the contamination of the infrared-hardening film 13 by fingerprints.

Example five:

fig. 8 shows a lens, wherein (a) is a schematic perspective view of an infrared anti-reflection lens 50 according to an embodiment of the present disclosure, and (B) is a schematic cross-sectional view of the lens 50 shown in (a) along a plane a-B

Unlike the lens shown in example two, the lens shown in fig. 8 and 9 may not include the infrared hard layer 13, the anti-fingerprint film 14 directly covers the surface of the first infrared antireflection film 12 facing away from the substrate 11, and one side of the anti-fingerprint film 14 in the lens is exposed to the external environment during use, so as to prevent the first infrared antireflection film 13 from being contaminated by fingerprints during use of the lens.

Example six:

fig. 9 shows a lens, in which (a) is a schematic perspective view of an infrared anti-reflection lens 60 according to an embodiment of the present disclosure, and (B) is a schematic cross-sectional view of the lens 60 shown in (a) along a plane a-B. In the lens shown in fig. 9, unlike the lens shown in the third embodiment, the lens may not include the infrared hard layer 13, the anti-fingerprint film 14 directly covers the surface of the first infrared antireflection film 12 facing away from the substrate 11, and the side of the anti-fingerprint film 14 in the lens is exposed to the external environment during use, so as to prevent the first infrared antireflection film 13 from being contaminated by fingerprints during use of the lens.

Example seven:

in the lens shown in fig. 10, unlike the lens shown in the third embodiment, the lens may not include the infrared hard layer 13, the anti-fingerprint film 14 directly covers the second surface 112 of the substrate 11, and the side of the anti-fingerprint film 14 in the lens is exposed to the external environment during the use process, so as to prevent the substrate from being contaminated by fingerprints during the use process of the lens.

It should be understood that while fig. 5-7 each include an anti-fingerprint film, the anti-fingerprint film 14 is not a necessary film layer for the lens shown in fig. 5-7, and in some embodiments, the lens shown in fig. 6-7 may not include the anti-fingerprint film 14, in which case the infrared-stiffened film 13 is directly exposed to the environment.

It should also be understood that fig. 4-10 are only examples of lenses in which the first surface 111 and the second surface 112 of the substrate are circular, and it should be understood that the two surfaces of the substrate 11 may also be square, oval, regular pentagon, regular hexagon, regular 12 polygon, etc., and may also be irregular to meet different appearance requirements.

The materials and thicknesses of the respective thin films in the lenses shown in the above-described embodiments one to seven will be described below.

The substrate 11 may be made of silicon wafer or germanium wafer, and may have a thickness of 0.2-2.0 mm. Optionally, the thickness of the material is 0.3-0.6 mm.

The anti-fingerprint film 14 may be made of perfluoropolyether siloxane, polytetrafluoroethylene material, aliphatic siloxane material, or the like, and has a film thickness of 2 to 50 nm. Optionally, the thickness of the anti-fingerprint film 14 may be reduced as much as possible, for example, 10 to 35nm, while ensuring the anti-fingerprint effect.

Further, the anti-fingerprint film 14 may be made of a material having a transmittance for infrared light in a target wavelength range higher than a first threshold value. For the target wavelength range and the first threshold, reference may be made to the related description in the first embodiment, and details are not repeated here.

The material of the above-mentioned red-added hard film 13 may be diamond-like carbon (DLC), silicon carbide, germanium carbide, silicon or germanium, etc., and the film thickness is 5 to 300 nm. For example, the material of the above-mentioned red-plus-hard film 13 is diamond-like carbon, and the thickness is 20 to 60 nm.

It is understood that materials such as silicon carbide, germanium carbide, diamond-like carbon, etc. have very high hardness, are resistant to acid and base corrosion, and have a high throw ratio in the infrared light range, and the hardness of the lens can be greatly improved by arranging the materials on or adjacent to the outer surface of the lens.

The material of first infrared antireflection film 12 or second infrared antireflection film 15 may include stacked N material layers, each of which may be zinc sulfide ZnS, zinc selenide ZnS, germanium Ge, silicon Si, yttrium fluoride YF₃YbF, YbF₃Calcium fluoride CaF₂Or magnesium fluoride MgF₂Etc., the total number of layers N may be 1-100, alternatively 4-20. The materials of the various layers may be partially different or different from each other. The thickness of the ZnS layer or ZnS layer may be 40 to 800nm, the thickness of the Ge layer or Si layer may be 30 to 900nm, YF₃Or YbF₃Or CaF₂The thickness of the fluoride layer may be 50 to 600 nm.

The first infrared antireflection film 12 or the second infrared antireflection film 15 may have a single-layer structure, a double-layer structure, a three-layer structure, or other multi-layer structures. The following are introduced separately:

(1) single layer structure

When the first infrared reflection reducing film 12 has a single-layer structureThe material of the first infrared reflection reducing film 12 may be ZnS, ZnSe, or fluoride (such as YF) ₃YbF, YbF₃Calcium fluoride CaF₂Or magnesium fluoride MgF₂Etc.) and the like.

When the first infrared antireflection film 12 in the lens shown in fig. 7, 8, 9, and 10 or the second infrared antireflection film 15 shown in fig. 6 or 9 has a single-layer structure, the thickness of the first infrared antireflection film 12 or the second infrared antireflection film 15 may be λ/4 or n × λ + λ/4. Where λ ∈ target wavelength range. For example, λ can range from 6 μm to 14 μm.

In the lens shown in fig. 4, 5, and 6, if the first infrared antireflection film 15 has a single-layer structure, the refractive index of the material on both sides of the first infrared antireflection film, that is, the refractive index of the substrate and the refractive index of the infrared hardened film with respect to infrared light in the target wavelength range, may be considered for the selection of the material of the first infrared antireflection film.

Optionally, the refractive index of the first infrared antireflection film 12 for infrared light is larger than that of the red hard coat 13 and smaller than that of the substrate 11. For example, substrate 11 can be silicon or germanium, infrared hardening film 13 can be diamond-like, and first infrared anti-reflective film 12 can be a fluoride (e.g., YF)₃YbF, YbF₃Calcium fluoride CaF2 or magnesium fluoride MgF2, etc.). At this time, the combination of the first infrared antireflection film and the infrared hard coat film is equivalent to an infrared antireflection film with a double-layer structure, and the first infrared antireflection film 12 and the infrared hard coat film 13 can play a role of antireflection together.

Alternatively, the refractive index of the first infrared antireflection film 12 for infrared light may be comparable to the refractive index of the infrared hardening film 13, that is, the difference between the refractive index of the first infrared antireflection film 12 for infrared light and the refractive index of the infrared hardening film 13 is not greater than a preset value (e.g., 0.5, 0.3, 0.2, 0.1). For example, the material of substrate 11 is silicon or germanium, the material of infrared hardening film 13 is diamond-like carbon, and in this case, the material of first infrared antireflection film 12 may be zinc sulfide ZnS or zinc selenide ZnSe.

It should be understood that the effect of the infrared antireflection film a and the infrared hardening film B on antireflection is that: the transmittance of the lens 1 (substrate/infrared antireflection film a) for infrared light in the target wavelength range is smaller than that of the lens 2 (substrate/infrared antireflection film a/infrared hardening film B).

(2) Double-layer structure

Fig. 11 shows another cross-sectional view of the lens along plane a-B. Taking the first infrared antireflection film as an example of a two-layer structure, in some embodiments, first infrared antireflection film 12 may include a first antireflection layer 121 and a second antireflection layer 122 sequentially stacked on first surface 111 of substrate 11.

In the case where the first infrared antireflection film 12 in the lens shown in fig. 7, 8, 9, and 10 has the above-described two-layer structure, the surface of the first infrared antireflection film 12 facing away from the substrate 11 is exposed or covered with the anti-fingerprint film 14. The first anti-reflection layer 121 and the second anti-reflection layer 111 may form a structure having a high refractive index and a low refractive index. That is, the refractive index of the first anti-reflection layer 121 is greater than the refractive index of the second anti-reflection layer 122, so as to improve the transmittance of the lens for infrared light.

For example, the material of substrate 11 may be silicon or germanium, the material of first anti-reflection layer 121 may be ZnS or ZnSe, and the like, and the material of second anti-reflection layer 122 may be fluoride (e.g., YF)₃YbF, YbF₃Calcium fluoride CaF2 or magnesium fluoride MgF2, etc.).

For another example, substrate 11 may be silicon, first anti-reflection layer 121 may be germanium, second anti-reflection layer 122 may be ZnS, ZnSe, or fluoride (e.g. YF)₃YbF, YbF₃Calcium fluoride CaF₂Or magnesium fluoride MgF₂Etc.) and the like.

In the lenses shown in fig. 4, 5, and 6, when the first infrared antireflection film 12 has the above-mentioned double-layer structure, the surface of the first infrared antireflection film 12 facing away from the substrate 11 is the infrared hardening film 13. The design of the lens when the first infrared antireflection film 12 has a double-layer structure is as follows:

in some embodiments, first anti-reflection layer 121, second anti-reflection layer 122, and infrared hard coating film 13 may form a structure with high, medium, and low refractive indexes. That is, the refractive index of the first anti-reflection layer 121 is greater than that of the second anti-reflection layer 122, and the refractive index of the second anti-reflection layer 122 is greater than that of the hard red coating 13, so as to improve the transmittance of the lens for infrared light. In other embodiments, the refractive index of first antireflective layer 121 may be greater than the refractive index of second antireflective layer 122, and the refractive index of infrared antireflective film 13 may be comparable to the refractive index of second antireflective layer 122. In the above two implementations, the first infrared antireflection film 12 and the infrared hard mask 13 may play a role of antireflection. At this time, the refractive index and the thickness of the material of each layer need to be considered when designing the layer structure of the lens so that the lens has a high transmittance for infrared light of a target wavelength range.

For example, the substrate 11 is made of Si or Ge, the first anti-reflection layer 121 is made of Ge or Si, the second anti-reflection layer 122 is made of ZnS or ZnSe, and the infrared hard coating is made of diamond-like carbon.

In other embodiments, substrate 11 may be made of Si or Ge, first anti-reflection layer 121 may be made of ZnS or ZnSe, and second anti-reflection layer 122 may be made of fluoride (e.g., YF)₃YbF, YbF₃Calcium fluoride CaF₂Or magnesium fluoride MgF₂Etc.), the material of the infrared-hardened film 13 is diamond-like carbon.

(3) Three-layer structure

Fig. 12 shows another cross-sectional view of the lens along plane a-B. Taking the first infrared antireflection film 12 as an example of a two-layer structure, in some embodiments, the first infrared antireflection film 12 may include a first antireflection layer 201, a second antireflection layer 202, and a third antireflection layer 203 sequentially stacked on the first surface 111 of the substrate 11.

In the case where the first infrared antireflection film 12 in the lens shown in fig. 7, 8, 9, and 10 has the above-described two-layer structure, the surface of the first infrared antireflection film 12 facing away from the substrate 11 is exposed or covered with the anti-fingerprint film 14. The first antireflection layer 201, the second antireflection layer 202, and the third antireflection film 203 may be formed to have a high, medium, and low refractive index structure. That is, the refractive index of the first anti-reflection layer 201 is greater than that of the second anti-reflection layer 202, and the refractive index of the second anti-reflection layer 202 is greater than that of the third anti-reflection layer 203, so as to improve the transmittance of the lens for infrared light.

For example,the substrate is made of silicon or germanium, the first anti-reflection layer 201 can be made of germanium Ge or silicon Si, the second anti-reflection layer 202 can be made of zinc sulfide ZnS or zinc selenide ZnSe, and the third anti-reflection layer 203 can be made of fluoride (such as yttrium fluoride YF)₃YbF, YbF₃Calcium fluoride CaF₂Or magnesium fluoride MgF₂Etc.).

In the lens shown in fig. 4, 5 and 6, when the first infrared antireflection film 12 has the three-layer structure, the surface of the first infrared antireflection film 12 facing away from the substrate 11 is the infrared hardening film 13. The design of the lens when the first infrared antireflection film 12 has a three-layer structure is as follows:

in some embodiments, the first anti-reflection layer 201, the second anti-reflection layer 202, the third anti-reflection layer 203, and the hard red overcoat 13 may form a structure with high, medium, and low refractive indexes, that is, the refractive index of the first anti-reflection layer 201 is greater than the refractive index of the second anti-reflection layer 202, the refractive index of the second anti-reflection layer 202 is less than the refractive index of the third anti-reflection layer 203, and the refractive index of the third anti-reflection layer 203 is greater than the refractive index of the hard infrared overcoat 13, so as to improve the transmittance of the lens for infrared light.

For example, substrate 11 may be made of Si or Ge, first anti-reflection layer 201 may be made of Si or Ge, second anti-reflection layer 202 may be made of ZnS or ZnSe, and third anti-reflection layer 203 may be made of fluoride (e.g., YF ₃YbF, YbF₃Calcium fluoride CaF2 or magnesium fluoride MgF2, etc.), the material of the infrared-hardened film 13 is diamond-like carbon.

(4) Multilayer structure

Fig. 13 is another schematic cross-sectional view of the lens along plane a-B. Taking the first infrared antireflection film 12 as a dual-layer structure for illustration, in some embodiments, the first infrared antireflection film 12 may include N antireflection layers, namely a first antireflection layer 301, second antireflection layers 302, …, and an nth antireflection film 30N, sequentially stacked on the first surface 111 of the substrate 11, where N is a positive integer greater than 1.

In the case where the first infrared antireflection film 12 in the lens shown in fig. 7, 8, 9, and 10 has the above-described two-layer structure, the surface of the first infrared antireflection film 12 facing away from the substrate 11 is exposed or covered with the anti-fingerprint film 14. The layer structure of the first infrared antireflection film 12 may be any structure that can realize an infrared antireflection function.

In the lens shown in fig. 4, 5, and 6, when the first infrared antireflection film 12 has the above-described N-layer structure, the surface of the first infrared antireflection film 12 facing away from the substrate 11 is the infrared hardening film 13.

Alternatively, the refractive index of the anti-reflection layer (i.e., the nth anti-reflection film 30N) of the first infrared anti-reflection film 12 connected to the infrared hard mask 13 may be equivalent to the refractive index of the infrared hard mask 13; alternatively, the refractive index of the antireflective layer (i.e., nth antireflective film) in the first infrared antireflective film 12 connecting the hard red overcoat 13 may be greater than the refractive index of the hard red overcoat 13. At this time, the infrared hard coating and the first infrared antireflection film can play a role of antireflection.

The layer structure of the N antireflection layers can be a superposition of at least one of a structure with high and low refractive indexes and a structure with high, medium and low refractive indexes.

In other embodiments, the refractive index of the anti-reflection layer (i.e., the nth anti-reflection film) connected to the hard red addition film 13 in the first infrared anti-reflection film 12 may also be smaller than the refractive index of the hard red addition film 13, and at this time, the thickness of the hard red addition film 13 may be reduced on the premise of ensuring the hardness of the surface of the lens, for example, the thickness of the hard red addition film 13 is 10 to 100 nm.

It should be noted that the second infrared antireflection film 15 may also have a multilayer structure, and the layer structure thereof may refer to the design manner of the first infrared antireflection film 12 in the lens shown in fig. 7, 8, 9, and 10, which is a double-layer structure, a three-layer structure, or a multilayer structure, and is not described herein again.

The following describes a method for manufacturing a lens, which can be applied to a manufacturing process of a component of an electronic device or an electronic device to obtain a component or an electronic device having the lens. As shown in fig. 14, the method includes the following partial or whole steps:

s101: providing a substrate;

s102: and forming a first infrared antireflection film on the first surface of the substrate.

The first infrared antireflection film may have a single-layer structure, a double-layer structure, a three-layer structure, or other multi-layer structures, and the material and thickness of each layer structure may be described in the layer structure of the first infrared antireflection film, which is not described herein again.

The first infrared antireflection film may be made of a material deposited by vacuum physical vapor deposition on the first surface of the substrate, and when the first infrared antireflection film is a multilayer antireflection layer, ZnS, ZnSe, Ge, YF may be alternately deposited on the first surface of the substrate by vacuum physical vapor deposition₃、YbF₃、CaF₂And so on.

After S102, S103a, S103b, S103c, or S103d may be performed. The following are introduced separately:

s103 a: and forming an infrared hard film on the surface of the first infrared antireflection film, which is far away from the substrate.

After performing S101, S102 and S103a, the lens according to the first embodiment (as shown in fig. 4) can be obtained. S104 may also be performed after S103a to obtain the lens described in example two (as shown in fig. 5).

Optionally, in addition to performing S101, S102 and S103a, after step S101, the method may further perform step S105 to obtain the lens (as shown in fig. 6) described in the third embodiment.

In a specific implementation, if the material of the infrared hard film is silicon or germanium, a silicon film or a germanium film may be deposited on the surface of the first infrared antireflection film away from the substrate by a vacuum physical vapor deposition technique.

If the material of the infrared hard film is diamond-like carbon, a vacuum magnetron sputtering method or an ion beam sputtering method can be adopted, targets such as carbon, graphite and the like are selected as sputtering target materials, or CH4 gas is selected as reaction gas, and a diamond-like carbon film is deposited on the surface of the first infrared antireflection film, which is far away from the substrate.

S103 b: and forming a red-added hard film on the second surface of the substrate.

After performing S101, S102, and S103b, a lens can be obtained. S104 may also be performed after S103b to obtain the lens according to the fourth embodiment (as shown in fig. 7). The method for forming the red-added hard film can be described in relation to S103a above.

S103 c: and forming an anti-fingerprint film on the surface of the first infrared antireflection film, which is far away from the substrate.

After performing S101, S102 and S103c, the lens described in example five can be obtained (as shown in fig. 8).

Optionally, in addition to performing S101, S102 and S103c, after step S101, the method can further perform step S105 to obtain the lens according to embodiment six (as shown in fig. 9).

In the specific implementation, a vacuum physical vapor deposition method can be adopted, materials such as perfluoropolyether siloxane and the like are selected as evaporation materials, and the anti-fingerprint film is formed on the surface of the first infrared antireflection film, which is far away from the substrate, in a deposition manner; or a spraying method can be adopted, materials such as perfluoropolyether siloxane and the like are selected as spraying liquid medicine, and the spraying liquid medicine is sprayed on the surface of the first infrared antireflection film, which is far away from the substrate, so that the fingerprint preventing film is formed; and spraying liquid medicine on the surface of the first infrared antireflection film, which is away from the substrate, by adopting a spin-coating method to form the fingerprint-proof film.

S103 d: and forming an anti-fingerprint film on the second surface of the substrate.

After performing S101, S102 and S103d, the lens according to example seven (as shown in fig. 10) can be obtained. The method for forming the red-added hard film can be described in relation to S103a above.

S104: and forming an anti-fingerprint film on the surface of the infrared hardening film, which is far away from the substrate.

The method for forming the red-added hard film can be described in relation to S103a above.

S105: and forming a second infrared antireflection film on the second surface of the substrate.

It should be understood that, in fig. 14, although S104 and S105 are performed after S103a, S103b, S103c, or S103d, in some embodiments, S104 and S105 may be performed at any step after step S101.

It should be understood that during the preparation of the above-mentioned individual layer structures, the thickness of each film layer can be controlled by deposition power, deposition time, etc. to obtain a satisfactory lens.

The following are lenses and lens properties provided in some implementations provided for embodiments of the present application.

Lens A:

in the lens structure shown in the third embodiment, the substrate is a silicon wafer with a thickness of 0.3-0.6 mm; the first infrared antireflection film and the second infrared antireflection film are of four-layer structures, and the first infrared antireflection film and the second infrared antireflection film are sequentially arranged from the surface of the substrate to the inside to the outside: ZnS layer, Ge layer, ZnS layer and YF₃The layer, and the corresponding thickness of each layer structure from inside to outside is 40 ~ 70nm, 70 ~ 90nm, 500 ~ 600nm and 400 ~ 600nm in proper order. The material of the infrared hard film is diamond-like carbon, the thickness of the film layer is 20-60 nm, the material of the fingerprint-proof film is perfluoropolyether siloxane, and the thickness of the fingerprint-proof film is 10-35 nm.

The Vickers hardness of the lens A is greater than 1000 Hv. The transmittance of the lens is tested at a wave band of 2-14 μm, and the test result is shown in fig. 15A, which shows that the average transmittance of the lens is not less than 80%. Fig. 15B is a schematic view showing the change in the water drop angle of the lens a before and after rubbing. 4 lenses a (lens 1, lens 2, lens 3, lens 4) were selected, and for each lens a, water drop angle tests before and after rubbing were performed at three positions, respectively, to obtain test results shown in fig. 15B. It can be seen that the initial water drop angle of the surface of the lens (the surface of the anti-fingerprint film) is more than or equal to 110 degrees, and after the 2cm by 2cm steel wool is rubbed 2500 times under the load of 1kgf, the water drop angle of each of the four lenses A is more than or equal to 100 degrees; the lens had a crush strength of greater than 10kgf and lens a reflected light slightly darker black.

And (3) lens B:

in the lens structure shown in the third embodiment, the materials and thicknesses of the substrate, the first infrared antireflection film, the second infrared antireflection film and the anti-fingerprint film are the same as those of the lens a, except that in the lens B, the material of the red hard film is a silicon film, and the thickness of the film layer is 5 to 30 nm.

Through tests, the Vickers hardness of the lens B is larger than 1000Hv, the average transmittance of the lens B is larger than or equal to 85% under the wave band of 2-14 μm, the initial water drop angle of the surface of the lens B is larger than or equal to 110 degrees, after the initial water drop angle of the surface of the lens B is larger than or equal to 100 degrees under the load of 1kgf and 2cm x 2cm steel wool is rubbed for 2500 times, the extrusion strength of the lens B is larger than 10kgf, and the light reflection of the lens B is slightly light purple.

And (3) lens C:

in the lens structure of the sixth embodiment, the substrate is a germanium sheet with a thickness of 0.3-0.6 mm. The first infrared antireflection film and the second infrared antireflection film are both of a six-layer structure, and the first infrared antireflection film and the second infrared antireflection film are sequentially arranged from the surface of the substrate to the inside to the outside: ZnS layer, Ge layer, ZnS layer, YF₃The multilayer film comprises a layer, a ZnSe layer and a YF3 layer, wherein the thicknesses corresponding to the layer structures from inside to outside are 20-50 nm, 40-80 nm, 140-180 nm, 160-200 nm, 40-60 nm and 15-35 nm in sequence. The anti-fingerprint film is made of perfluoropolyether siloxane and has the thickness of 5-40 nm.

Through tests, the Vickers hardness of the lens C is larger than 700Hv, the average transmittance of the lens C is larger than or equal to 85% under the wave band of 2-14 μm, the initial water drop angle of the surface of the lens C is larger than or equal to 110 degrees, after 1kgf load and 2cm x 2cm steel wool friction for 2500 times, the water drop angle is larger than or equal to 100 degrees, the extrusion strength of the lens C is larger than 8kgf, and the reflection of the lens C is slightly green.

And (3) a lens D:

in the lens structure shown in the fourth embodiment, the lens D has a structure of an anti-fingerprint film, a first infrared hard mask, a substrate, and a second infrared antireflection film, wherein the substrate is a silicon wafer with a thickness of 0.3-0.6 mm. The first infrared antireflection film and the second infrared antireflection film are of four-layer structures, and the first infrared antireflection film and the second infrared antireflection film are sequentially arranged from the surface of the substrate to the inside to the outside: ZnS layer, Ge layer, ZnS layer and YbF₃The thickness of each layer structure from inside to outside is 30-60 nm, 10-40 nm, 120-200 nm and 140-220 nm in sequence. The material of the infrared hard film is diamond-like carbon, and the thickness of the film layer is 20-150 nm; the anti-fingerprint film is made of perfluoropolyether siloxane and has the thickness of 10-35 nm.

Through tests, the Vickers hardness of the lens D is larger than 1100Hv, the average transmittance of the lens D is larger than or equal to 65% under the wave band of 2-14 μm, the initial water drop angle of the surface of the lens D is larger than or equal to 110 degrees, after the initial water drop angle of the surface of the lens D is larger than or equal to 100 degrees and the load of 1kgf and the friction of 2cm x 2cm steel wool for 2500 times, the extrusion strength of the lens D is larger than 10kgf, and the light reflection of the lens D is slightly dark black.

And (3) a lens E:

in the lens structure of the seventh embodiment, the lens E has a structure of anti-fingerprint film/substrate/first infrared antireflection film, wherein the substrate is silicon with a thickness of 0.3-0.6 mm And (3) slicing. The first infrared antireflection film structure is a four-layer structure, and the first surface of the substrate sequentially comprises from inside to outside: ZnS layer, Ge layer, ZnS layer and YF₃The thickness of each layer structure from inside to outside is 30-60 nm, 10-40 nm, 120-180 nm and 160-220 nm in sequence. The anti-fingerprint film is made of perfluoropolyether siloxane and has the thickness of 10-35 nm.

Through tests, the Vickers hardness of the lens E is larger than 1000Hv, the average transmittance of the lens E is larger than or equal to 65% under the wave band of 2-14 μm, the initial water drop angle of the surface of the lens E is larger than or equal to 110 degrees, after the lens E is subjected to 1kgf load and 2cm x 2cm steel wool friction for 2500 times, the water drop angle is larger than or equal to 100 degrees, the extrusion strength of the lens E is larger than 10kgf, and the reflection of the lens E is slightly blue.

The above description is only an embodiment of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions within the technical scope of the present disclosure should be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. An infrared anti-reflection lens, comprising: the infrared antireflection film comprises a substrate, a first infrared antireflection film and an infrared hard film which are arranged in a laminated manner; the first infrared antireflection film is arranged on the first surface of the substrate, the substrate and the first infrared antireflection film are both positioned on the same side of the infrared hard mask, and the transmissivity of the infrared hard mask to infrared light in a target wavelength range is larger than a first threshold value, so that the infrared light in the target wavelength range can penetrate through the infrared antireflection lens.

2. The infrared antireflection lens of claim 1 wherein the infrared hard coat is disposed on a surface of the first infrared antireflection film facing away from the substrate, and wherein a hardness of the infrared hard coat is greater than a hardness of the first infrared antireflection film.

3. The infrared anti-reflection lens of claim 2, further comprising a second infrared anti-reflection film disposed on a second surface of the substrate, wherein the first surface and the second surface are opposite surfaces of the substrate.

4. An infrared anti-reflection lens as claimed in claim 1, wherein the hard red addition film is disposed on a second surface of the substrate, the first surface and the second surface are two surfaces disposed opposite to each other on the substrate, and the hardness of the hard red addition film is not less than that of the substrate.

5. The infrared anti-reflective lens of any of claims 1-4, wherein the first infrared anti-reflective film comprises N anti-reflective layers, wherein N is a positive integer greater than 1.

6. The infrared antireflection lens of claim 5, wherein the difference between the refractive index of the target antireflection layer of the N antireflection layers and the refractive index of the hard red addition film is not greater than a preset value, and the target antireflection layer is the antireflection layer of the N antireflection layers connected to the hard red addition film.

7. An infrared anti-reflective lens according to claim 6, wherein said predetermined value is in the range of 0.01 to 0.5.

8. The infrared antireflection lens of claim 5 wherein the refractive index of a target antireflection layer of the N antireflection layers is greater than the refractive index of the red plus hard film, and the target antireflection layer is the antireflection layer of the N antireflection layers that is connected to the red plus hard film.

9. The infrared antireflection lens of any of claims 6 to 8, wherein N is 4, the N antireflection layers include a first antireflection layer, a second antireflection layer, a third antireflection layer, and a fourth antireflection layer that are sequentially stacked on the first surface, the first antireflection layer is made of zinc sulfide or zinc selenide, the second antireflection layer is made of silicon or germanium, the third antireflection layer is made of zinc sulfide or zinc selenide, and the fourth antireflection layer is made of at least one of yttrium fluoride, ytterbium fluoride, and calcium fluoride.

10. The infrared antireflection lens of claim 9, wherein the first antireflection layer has a thickness of 40 to 800nm, the second antireflection layer has a thickness of 30 to 900nm, the third antireflection layer has a thickness of 40 to 800nm, and the fourth antireflection layer has a thickness of 50 to 600 nm.

11. The infrared antireflection lens of any one of claims 1 to 10 further comprising an anti-fingerprint film disposed on a surface of the infrared stiffened film facing away from the substrate.

12. The infrared antireflection lens of claim 11 wherein the anti-fingerprint film is made of at least one of perfluoropolyether siloxane, polytetrafluoroethylene, or aliphatic siloxane, and the thickness of the anti-fingerprint film is 2nm to 50 nm.

13. An infrared anti-reflective lens according to any of claims 1 to 12, wherein the material of said red plus hard coat is at least one of diamond like carbon, silicon and germanium, and the thickness of said red plus hard coat is 5 to 300 nm.

14. An infrared anti-reflective lens according to any of claims 1 to 13, wherein the substrate is made of silicon or germanium and has a thickness of 0.2 to 2.0 mm.

15. An infrared anti-reflective lens according to any of claims 1 to 14, wherein said target wavelength range is from 1 μm to 20 μm.

16. An infrared anti-reflective lens according to any of claims 1 to 15, wherein said first threshold value is in the range of 0.7 to 1.

17. A thermometric module comprising a package for holding the infrared anti-reflection lens and the infrared sensor, an infrared sensor for receiving infrared light transmitted through the infrared anti-reflection lens to the infrared sensor, and the infrared anti-reflection lens of any one of claims 1-16.

18. An electronic device comprising any one of the thermometry modules of claim 17.

19. An electronic device housing, comprising: a housing comprising a temperature sensing module hole and an infrared anti-reflective lens of any of claims 1-16, the infrared anti-reflective lens being secured within the temperature sensing module hole.

20. The enclosure of claim 19, further comprising a glass lens, wherein the housing comprises a camera hole, wherein the glass lens is secured within the camera hole, wherein the glass lens comprises the temperature measurement module hole, and wherein the infrared anti-reflection lens is secured within the temperature measurement module hole.