CN113458523A - Welding method of tantalum target material assembly - Google Patents
Welding method of tantalum target material assembly Download PDFInfo
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- CN113458523A CN113458523A CN202110758427.8A CN202110758427A CN113458523A CN 113458523 A CN113458523 A CN 113458523A CN 202110758427 A CN202110758427 A CN 202110758427A CN 113458523 A CN113458523 A CN 113458523A
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- tantalum target
- welding surface
- target material
- back plate
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- 238000003466 welding Methods 0.000 title claims abstract description 148
- 229910052715 tantalum Inorganic materials 0.000 title claims abstract description 119
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 119
- 239000013077 target material Substances 0.000 title claims abstract description 77
- 238000000034 method Methods 0.000 title claims abstract description 35
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 73
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000000843 powder Substances 0.000 claims abstract description 41
- 238000005488 sandblasting Methods 0.000 claims abstract description 41
- 229910052802 copper Inorganic materials 0.000 claims abstract description 39
- 239000010949 copper Substances 0.000 claims abstract description 39
- 238000007747 plating Methods 0.000 claims abstract description 37
- 230000008595 infiltration Effects 0.000 claims abstract description 34
- 238000001764 infiltration Methods 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 238000010438 heat treatment Methods 0.000 claims abstract description 23
- 238000001816 cooling Methods 0.000 claims abstract description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 11
- 229910000838 Al alloy Inorganic materials 0.000 claims description 9
- 238000005422 blasting Methods 0.000 claims description 9
- 229910052593 corundum Inorganic materials 0.000 claims description 7
- 239000010431 corundum Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000011812 mixed powder Substances 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 claims 1
- 238000000576 coating method Methods 0.000 abstract description 14
- 239000011248 coating agent Substances 0.000 abstract description 10
- 238000004544 sputter deposition Methods 0.000 abstract description 7
- 230000002035 prolonged effect Effects 0.000 abstract description 5
- 230000000052 comparative effect Effects 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005219 brazing Methods 0.000 description 3
- 238000001513 hot isostatic pressing Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
- B23K1/203—Fluxing, i.e. applying flux onto surfaces
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16B—DEVICES FOR FASTENING OR SECURING CONSTRUCTIONAL ELEMENTS OR MACHINE PARTS TOGETHER, e.g. NAILS, BOLTS, CIRCLIPS, CLAMPS, CLIPS OR WEDGES; JOINTS OR JOINTING
- F16B11/00—Connecting constructional elements or machine parts by sticking or pressing them together, e.g. cold pressure welding
- F16B11/004—Connecting constructional elements or machine parts by sticking or pressing them together, e.g. cold pressure welding by cold pressure welding
Abstract
The invention relates to a welding method of a tantalum target assembly, which comprises the following steps: carrying out sand blasting treatment on the welding surface of the tantalum target material, and then carrying out tin plating treatment on the welding surface of the tantalum target material; carrying out copper film plating treatment on the welding surface of the back plate, then carrying out heating treatment on the tantalum target material of the tin film and the back plate of the copper film, then respectively arranging mixed metal powder on the welding surface of the tantalum target material and the welding surface of the back plate, and then carrying out infiltration treatment; and arranging a copper wire on the back plate after the infiltration treatment, assembling the welding surface of the back plate with the copper wire and the welding surface of the tantalum target material, and pressurizing and cooling to obtain the tantalum target material assembly. By adopting the coating process and combining with specific mixed metal powder for welding, the welding bonding strength of the tantalum target assembly is improved, the service life of the welded target is prolonged by 20-30%, and the thickness of the coating obtained in the sputtering process is uniform when the welded target assembly is sputtered.
Description
Technical Field
The invention relates to the field of target welding, in particular to a welding method of a tantalum target assembly.
Background
At present, tantalum targets are generally required to be welded and combined with a back plate for semiconductor sputtering, wherein brazing welding is a welding process commonly used for welding target components, and has the advantage of low cost and high efficiency compared with diffusion welding. At present, the welding mode of the tantalum target and the aluminum alloy back plate is diffusion welding generally, and the brazing welding process has the defect of low bonding strength and lacks of a stable brazing process.
For example, CN103572225A discloses a method for manufacturing a tantalum target and a tantalum target assembly, the method for manufacturing a tantalum target includes: providing a tantalum ingot; carrying out hot forging on the tantalum ingot to form a first tantalum target blank; carrying out first heat treatment on the first tantalum target blank to form a second tantalum target blank, wherein the temperature of the first heat treatment is 1000-1200 ℃, and the heat preservation time is 30-90 minutes; after the first heat treatment, hot rolling the second tantalum target blank to form a third tantalum target blank; and carrying out second heat treatment on the third tantalum target blank to form a tantalum target, wherein the temperature of the second heat treatment is 1000-1200 ℃, and the heat preservation time is 30-90 minutes. The obtained tantalum target material has uniform internal structure and good magnetic performance, and the quality of a film formed by adopting the tantalum target material to manufacture a tantalum target material component for a semiconductor is good.
CN103801820A discloses a hot isostatic pressing diffusion welding method for a tantalum target and an aluminum backing plate, which comprises: loading a tantalum target material and an aluminum back plate into a vacuum sheath; vacuumizing the vacuum sheath; putting the vacuum sheath into a hot isostatic pressing furnace, heating and boosting pressure, and then preserving heat and pressure; decompressing and cooling the vacuum sheath; and removing the vacuum sheath and taking out the target combination formed by welding the tantalum target and the aluminum back plate. The welding strength of the tantalum target component welded by the hot isostatic pressing diffusion welding method for the tantalum target and the aluminum back plate can reach 150MPa, and the yield reaches more than 98%. The tantalum target material component has the advantages of high combination tightness, strong deformation resistance under heating and the like.
However, the welding method used for the second time in the prior art has the disadvantages of low welding bonding strength, short service life of the target material after welding and poor sputtering stability of the target material after welding.
Disclosure of Invention
In view of the problems in the prior art, the invention aims to provide a welding method of a tantalum target assembly, which solves the problems of low welding bonding strength, short service life, poor coating performance of the target assembly and the like of the target assembly obtained by the existing welding method through redesigning the welding process.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a welding method of a tantalum target assembly, which comprises the following steps:
(1) carrying out sand blasting treatment on the welding surface of the tantalum target material, and then carrying out tin plating treatment on the welding surface of the tantalum target material;
(2) carrying out copper film plating treatment on the welding surface of the back plate, then carrying out heating treatment on the tantalum target material of the tin film and the back plate of the copper film, then respectively arranging mixed metal powder on the welding surface of the tantalum target material and the welding surface of the back plate, and then carrying out infiltration treatment;
(3) arranging a copper wire on the back plate after the infiltration treatment, assembling the welding surface of the back plate with the copper wire and the welding surface of the tantalum target material, and pressurizing and cooling to obtain the tantalum target material assembly;
wherein the mixed metal powder comprises mixed powder of tin powder, silver powder and copper powder.
According to the welding method provided by the invention, the welding bonding strength of the tantalum target assembly is improved by adopting a coating process and combining with the specific mixed metal powder for welding, the service life of the welded target is prolonged by 20-30%, when the welded target assembly is sputtered, the thickness of the coating obtained in the sputtering process is uniform, and the coating density is improved by 10-20% compared with that of the traditional welding mode.
As a preferable technical scheme of the invention, the sand grains in the sand blasting treatment in the step (1) comprise No. 60 white corundum.
Preferably, the pressure of the blasting treatment in the step (1) is 0.5 to 0.6MPa, and for example, 0.5MPa, 0.51MPa, 0.52MPa, 0.53MPa, 0.54MPa, 0.55MPa, 0.56MPa, 0.57MPa, 0.58MPa, 0.59MPa or 0.6MPa may be used, but not limited to the values mentioned above, and other combinations not listed within this range are also applicable.
Preferably, the perpendicular distance between the blasting opening and the welding surface of the tantalum target in the blasting treatment in the step (1) is 80-100mm, for example, 80mm, 81mm, 82mm, 83mm, 84mm, 85mm, 86mm, 87mm, 88mm, 89mm, 90mm, 91mm, 92mm, 93mm, 94mm, 95mm, 96mm, 97mm, 98mm, 99mm or 100mm, but not limited to the values listed, and other combinations not listed in this range are also applicable.
Preferably, the time period of the sand blasting in the step (1) is 1-4min, such as 1min, 1.2min, 1.4min, 1.6min, 1.8min, 2min, 2.2min, 2.4min, 2.6min, 2.8min, 3min, 3.2min, 3.4min, 3.6min, 3.8min or 4min, etc., but not limited to the values listed, and other combinations not listed in the range are also applicable.
Preferably, the roughness of the welding surface of the tantalum target after the sand blasting in the step (1) is Ra1-4 μm, and may be, for example, 1 μm, 1.2 μm, 1.4 μm, 1.6 μm, 1.8 μm, 2 μm, 2.2 μm, 2.4 μm, 2.6 μm, 2.8 μm, 3 μm, 3.2 μm, 3.4 μm, 3.6 μm, 3.8 μm or 4 μm, but is not limited to the values listed, and other combinations not listed in the range are also applicable.
As a preferred embodiment of the present invention, the thickness of the tin film in the tin plating film treatment in the step (1) is 5 to 6 μm, and may be, for example, 5 μm, 5.1 μm, 5.2 μm, 5.3 μm, 5.4 μm, 5.5 μm, 5.6 μm, 5.7 μm, 5.8 μm, 5.9 μm or 6 μm, but is not limited to the values listed, and other combinations not listed in this range are also applicable.
As a preferable embodiment of the present invention, the roughness of the back plate bonding surface before the copper plating film treatment in step (2) is 0.4 to 1 μm, and may be, for example, 0.4 μm, 0.45 μm, 0.5 μm, 0.55 μm, 0.6 μm, 0.65 μm, 0.7 μm, 0.75 μm, 0.8 μm, 0.85 μm, 0.9 μm, 0.95 μm or 1 μm, but is not limited to the above-mentioned values, and other combinations not listed in this range are also applicable.
Preferably, the thickness of the copper film in the copper plating treatment in step (2) is 3 to 4 μm, and may be, for example, 3 μm, 3.1 μm, 3.2 μm, 3.3 μm, 3.4 μm, 3.5 μm, 3.6 μm, 3.7 μm, 3.8 μm, 3.9 μm or 4 μm, but is not limited to the values listed, and other combinations not listed in this range are also applicable.
As a preferred embodiment of the present invention, the temperature of the heat treatment in the step (2) is 280 ℃ to 310 ℃, and for example, 280 ℃, 282 ℃, 284 ℃, 286 ℃, 288 ℃, 290 ℃, 292 ℃, 294 ℃, 296 ℃, 298 ℃, 300 ℃, 302 ℃, 304 ℃, 306 ℃, 308 ℃ or 310 ℃ and the like, but not limited to the values listed, and other combinations not listed in this range are also applicable.
As a preferable technical scheme of the invention, the mixed metal powder comprises the following components in percentage by mass: 95.5-96% of tin powder, 3-3.5% of silver powder and the balance of copper powder.
The mixed metal powder with specific composition is used as a welding intermediate material to realize high-strength welding of the target material and the back plate, and simultaneously, the specific target material surface treatment mode is combined, so that the service life of the target material is prolonged, and the density of a coating film obtained after sputtering of the target material assembly is enhanced.
In the present invention, the content of tin powder in the mixed metal powder is 95.5 to 96% by mass, and may be, for example, 95.5%, 95.6%, 95.7%, 95.8%, 95.9%, or 96%, but is not limited to the above-mentioned values, and other combinations not shown in the above-mentioned range are also applicable.
In the present invention, the silver powder in the mixed metal powder may be 3 to 3.5% by mass, for example, 3%, 3.05%, 3.1%, 3.15%, 3.2%, 3.25%, 3.3%, 3.35%, 3.4%, 3.45%, or 3.5%, but is not limited to the above-mentioned values, and other combinations not shown in the above-mentioned range are also applicable.
Preferably, the mixed metal powder is added to provide a powder layer having a 2-4mm area thickness of the weld face, for example, 2mm, 2.1mm, 2.2mm, 2.3mm, 2.4mm, 2.5mm, 2.6mm, 2.7mm, 2.8mm, 2.9mm, 3mm, 3.1mm, 3.2mm, 3.3mm, 3.4mm, 3.5mm, 3.6mm, 3.7mm, 3.8mm, 3.9mm, or 4mm, but not limited to the values recited, and other combinations not recited within this range are equally applicable.
In a preferred embodiment of the present invention, in the step (2), the tantalum target and the aluminum alloy back plate are infiltrated by an ultrasonic infiltration apparatus with power of 400-800W, for example, 400W, 450W, 500W, 550W, 600W, 650W, 700W, 750W, or 800W, but not limited to the values listed, and other combinations not listed in this range are also applicable.
Preferably, the time of the soaking treatment in the step (2) is 15-45min, such as 15min, 16min, 18min, 20min, 22min, 24min, 26min, 28min, 30min, 32min, 34min, 36min, 38min, 40min, 42min, 44min or 45min, but not limited to the values listed, and other combinations not listed in the range are also applicable.
In a preferred embodiment of the present invention, the diameter of the copper wire in step (3) is 0.3 to 0.5mm, and may be, for example, 0.3mm, 0.31mm, 0.32mm, 0.33mm, 0.34mm, 0.35mm, 0.36mm, 0.37mm, 0.38mm, 0.39mm, 0.4mm, 0.41mm, 0.42mm, 0.43mm, 0.44mm, 0.45mm, 0.46mm, 0.47mm, 0.48mm, 0.49mm or 0.5mm, but is not limited to the above-mentioned values, and other combinations not listed in this range are also applicable.
As a preferred embodiment of the present invention, the pressure in the pressurized cooling in the step (3) is 100-400N, and may be, for example, 100N, 120N, 140N, 160N, 180N, 200N, 220N, 240N, 260N, 280N, 300N, 320N, 340N, 360N, 380N or 400N, but is not limited to the values listed above, and other combinations not listed within the range are also applicable.
As a preferred technical solution of the present invention, the welding method includes the steps of:
(1) carrying out sand blasting treatment on the welding surface of the tantalum target material, and then carrying out tin plating treatment on the welding surface of the tantalum target material; the grit in the grit blasting comprises No. 60 white corundum; the pressure of the sand blasting treatment is 0.5-0.6 MPa; the vertical distance between the sand blasting port and the welding surface of the tantalum target material in the sand blasting treatment is 80-100 mm; the time of sand blasting is 1-4 min; the roughness of the welding surface of the tantalum target after sand blasting treatment is Ra1-4 μm; the thickness of the tin film in the tin plating film treatment is 5-6 μm;
(2) carrying out copper film plating treatment on the welding surface of the back plate, then carrying out heating treatment on the tantalum target material of the tin film and the back plate of the copper film, then respectively arranging mixed metal powder on the welding surface of the tantalum target material and the welding surface of the back plate, and then carrying out infiltration treatment; the roughness of the welding surface of the back plate before the copper plating film treatment is 0.4-1 μm; the thickness of the copper film in the copper plating film treatment is 3-4 μm; the temperature of the heating treatment is 280-310 ℃; the mixed metal powder comprises the following components in percentage by mass: 95.5-96% of tin powder, 3-3.5% of silver powder and the balance of copper powder; the mixed metal powder is added into a powder layer with the welding surface area thickness of 2-4 mm; the infiltration treatment is to infiltrate the surfaces of the tantalum target material and the aluminum alloy back plate by adopting an ultrasonic infiltration device with the power of 400-800W; the time of the infiltration treatment is 15-45 min;
(3) arranging a copper wire on the back plate after the infiltration treatment, assembling the welding surface of the back plate with the copper wire and the welding surface of the tantalum target material, and pressurizing and cooling to obtain the tantalum target material assembly; the diameter of the copper wire is 0.3-0.5 mm; the pressure in the pressurized cooling is 100-400N.
In the invention, the back plate can be an aluminum back plate, a copper back plate or an aluminum alloy back plate and the like which are commonly used in the present application.
In the present invention, the heating treatment is continued for a time period not limited to a predetermined time period until the immersion treatment is completed.
Compared with the prior art, the invention at least has the following beneficial effects:
according to the welding method provided by the invention, the welding bonding strength of the tantalum target assembly is improved by adopting a coating process and combining with the specific mixed metal powder for welding, the service life of the welded target is prolonged by 20-30%, when the welded target assembly is sputtered, the thickness of the coating obtained in the sputtering process is uniform, and the coating density is improved by 10-20% compared with that of the traditional welding mode.
Detailed Description
To better illustrate the invention and to facilitate the understanding of the technical solutions thereof, typical but non-limiting examples of the invention are as follows:
example 1
The embodiment provides a welding method of a tantalum target assembly, which comprises the following steps:
(1) carrying out sand blasting treatment on the welding surface of the tantalum target material, and then carrying out tin plating treatment on the welding surface of the tantalum target material; the grit in the grit blasting comprises No. 60 white corundum; the pressure of the sand blasting treatment is 0.55 MPa; the vertical distance between the sand blasting port and the welding surface of the tantalum target material in the sand blasting treatment is 90 mm; the time of the sand blasting treatment is 2.5 min; the roughness of the welding surface of the tantalum target after sand blasting treatment is Ra2.5 mu m; the thickness of the tin film in the tin plating film treatment is 5.5 mu m;
(2) carrying out copper film plating treatment on the welding surface of the back plate, then carrying out heating treatment on the tantalum target material of the tin film and the back plate of the copper film, then respectively arranging mixed metal powder on the welding surface of the tantalum target material and the welding surface of the back plate, and then carrying out infiltration treatment; the roughness of the welding surface of the back plate before the copper plating film treatment is 0.7 mu m; the thickness of the copper film in the copper plating film treatment is 3.5 mu m; the temperature of the heating treatment is 295 ℃; the mixed metal powder comprises the following components in percentage by mass: 95.5% of tin powder, 3.2% of silver powder and the balance of copper powder; the mixed metal powder is added into a powder layer with the welding surface area thickness of 3 mm; the infiltration treatment is to infiltrate the surfaces of the tantalum target and the aluminum alloy back plate by adopting ultrasonic infiltration equipment with the power of 600W; the time of the infiltration treatment is 30 min;
(3) arranging a copper wire on the back plate after the infiltration treatment, assembling the welding surface of the back plate with the copper wire and the welding surface of the tantalum target material, and pressurizing and cooling to obtain the tantalum target material assembly; the diameter of the copper wire is 0.4 mm; the pressure in the pressurized cooling was 250N.
The welding performance of the obtained tantalum target assembly is detailed in table 1.
Example 2
The embodiment provides a welding method of a tantalum target assembly, which comprises the following steps:
(1) carrying out sand blasting treatment on the welding surface of the tantalum target material, and then carrying out tin plating treatment on the welding surface of the tantalum target material; the grit in the grit blasting comprises No. 60 white corundum; the pressure of the sand blasting treatment is 0.5 MPa; the vertical distance between the sand blasting port and the welding surface of the tantalum target material in the sand blasting treatment is 100 mm; the time of the sand blasting treatment is 1 min; the roughness of the welding surface of the tantalum target after sand blasting treatment is Ra1 mu m; the thickness of the tin film in the tin plating film treatment is 6 mu m;
(2) carrying out copper film plating treatment on the welding surface of the back plate, then carrying out heating treatment on the tantalum target material of the tin film and the back plate of the copper film, then respectively arranging mixed metal powder on the welding surface of the tantalum target material and the welding surface of the back plate, and then carrying out infiltration treatment; the roughness of the welding surface of the back plate before the copper plating film treatment is 1 mu m; the thickness of the copper film in the copper plating film treatment is 3 mu m; the temperature of the heat treatment is 280 ℃; the mixed metal powder comprises the following components in percentage by mass: 96% of tin powder, 3.5% of silver powder and the balance of copper powder; the mixed metal powder is added into a powder layer with the welding surface area thickness of 4 mm; the infiltration treatment is to infiltrate the surfaces of the tantalum target material and the aluminum alloy back plate by adopting ultrasonic infiltration equipment with the power of 400W; the soaking time is 15 min;
(3) arranging a copper wire on the back plate after the infiltration treatment, assembling the welding surface of the back plate with the copper wire and the welding surface of the tantalum target material, and pressurizing and cooling to obtain the tantalum target material assembly; the diameter of the copper wire is 0.3 mm; the pressure in the pressurized cooling was 100N.
The welding performance of the obtained tantalum target assembly is detailed in table 1.
Example 3
The embodiment provides a welding method of a tantalum target assembly, which comprises the following steps:
(1) carrying out sand blasting treatment on the welding surface of the tantalum target material, and then carrying out tin plating treatment on the welding surface of the tantalum target material; the grit in the grit blasting comprises No. 60 white corundum; the pressure of the sand blasting treatment is 0.6 MPa; the vertical distance between the sand blasting port and the welding surface of the tantalum target material in the sand blasting treatment is 80 mm; the time of the sand blasting treatment is 4 min; the roughness of the welding surface of the tantalum target after sand blasting treatment is Ra4 mu m; the thickness of the tin film in the tin plating film treatment is 5 mu m;
(2) carrying out copper film plating treatment on the welding surface of the back plate, then carrying out heating treatment on the tantalum target material of the tin film and the back plate of the copper film, then respectively arranging mixed metal powder on the welding surface of the tantalum target material and the welding surface of the back plate, and then carrying out infiltration treatment; the roughness of the welding surface of the back plate before the copper plating film treatment is 0.4 mu m; the thickness of the copper film in the copper plating film treatment is 4 mu m; the temperature of the heating treatment is 310 ℃; the mixed metal powder comprises the following components in percentage by mass: 95.5% of tin powder, 3% of silver powder and the balance of copper powder; the mixed metal powder is added into a powder layer with the welding surface area thickness of 2 mm; the infiltration treatment is to infiltrate the surfaces of the tantalum target material and the aluminum alloy back plate by adopting ultrasonic infiltration equipment with the power of 800W; the time of the infiltration treatment is 45 min;
(3) arranging a copper wire on the back plate after the infiltration treatment, assembling the welding surface of the back plate with the copper wire and the welding surface of the tantalum target material, and pressurizing and cooling to obtain the tantalum target material assembly; the diameter of the copper wire is 0.5 mm; the pressure in the pressurized cooling was 400N.
The welding performance of the obtained tantalum target assembly is detailed in table 1.
Comparative example 1
The difference from example 1 is that the welding surface of the tantalum target material is not plated with tin film, and the welding performance of the obtained tantalum target material component is detailed in table 1.
Comparative example 2
The difference from example 1 is that the welding surface of the backing plate is not plated with copper film, and the welding performance of the obtained tantalum target material assembly is detailed in table 1.
Comparative example 3
The difference from example 1 is only that the coating film on the bonding surface of the tantalum target material is changed to a nickel film with the same thickness, and the welding performance of the obtained tantalum target material assembly is detailed in table 1.
Comparative example 4
The difference from example 1 is only that the plated film on the bonding surface of the backing plate is changed to a nickel film with the same thickness, and the welding performance of the obtained tantalum target assembly is detailed in table 1.
Comparative example 5
The difference from example 1 is only that the mixed metal powder added to the bonding surface is replaced by the same amount of tin powder, and the bonding properties of the obtained tantalum target assembly are detailed in table 1.
Comparative example 6
The difference from example 1 is only that the mixed metal powder added to the welding surface is replaced by the same amount of copper powder, and the welding performance of the obtained tantalum target material assembly is detailed in table 1.
Comparative example 7
The difference from example 1 is only that the mixed metal powder added to the bonding surface is replaced by the same amount of silver powder, and the bonding properties of the obtained tantalum target assembly are detailed in table 1.
Comparative example 8
The difference from example 1 is that no copper wire is disposed on the back plate, and the welding performance of the obtained tantalum target material assembly is detailed in table 1.
TABLE 1
According to the results of the above embodiments and comparative examples, the welding method provided by the invention realizes the improvement of the welding bonding strength of the tantalum target assembly by adopting the coating process and combining with the specific mixed metal powder for welding, the service life of the target after welding is prolonged by 20-30%, when the target assembly after welding is sputtered, the thickness of the coating obtained in the sputtering process is uniform, and the density of the coating is improved by 10-20% compared with the traditional welding mode.
The applicant declares that the present invention illustrates the detailed structural features of the present invention through the above embodiments, but the present invention is not limited to the above detailed structural features, that is, it does not mean that the present invention must be implemented depending on the above detailed structural features. It should be understood by those skilled in the art that any modifications of the present invention, equivalent substitutions of selected components of the present invention, additions of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.
The preferred embodiments of the present invention have been described in detail, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and the invention is not described in any way for the possible combinations in order to avoid unnecessary repetition.
In addition, any combination of the various embodiments of the present invention is also possible, and the same should be considered as the disclosure of the present invention as long as it does not depart from the spirit of the present invention.
Claims (10)
1. A welding method of a tantalum target assembly is characterized by comprising the following steps:
(1) carrying out sand blasting treatment on the welding surface of the tantalum target material, and then carrying out tin plating treatment on the welding surface of the tantalum target material;
(2) carrying out copper film plating treatment on the welding surface of the back plate, then carrying out heating treatment on the tantalum target material of the tin film and the back plate of the copper film, then respectively arranging mixed metal powder on the welding surface of the tantalum target material and the welding surface of the back plate, and then carrying out infiltration treatment;
(3) arranging a copper wire on the back plate after the infiltration treatment, assembling the welding surface of the back plate with the copper wire and the welding surface of the tantalum target material, and pressurizing and cooling to obtain the tantalum target material assembly;
wherein the mixed metal powder comprises mixed powder of tin powder, silver powder and copper powder.
2. The welding method of claim 1, wherein the grit in the grit blasting of step (1) comprises 60# white corundum;
preferably, the pressure of the sand blasting treatment in the step (1) is 0.5-0.6 MPa;
preferably, the vertical distance between the sand blasting port and the welding surface of the tantalum target in the sand blasting treatment in the step (1) is 80-100 mm;
preferably, the time of the sand blasting treatment in the step (1) is 1-4 min;
preferably, the roughness of the welding surface of the tantalum target after the sand blasting treatment in the step (1) is Ra1-4 μm.
3. The production method according to any one of claims 1 to 2, wherein the thickness of the tin film in the tin film plating treatment in the step (1) is 5 to 6 μm.
4. The production method according to any one of claims 1 to 3, wherein the roughness of the back plate solder face before the copper plating film treatment in the step (2) is 0.4 to 1 μm;
preferably, the thickness of the copper film in the copper plating film treatment of step (2) is 3-4 μm.
5. The welding method as defined in any one of claims 1-4, wherein the temperature of the heating treatment in step (2) is 280-310 ℃.
6. The welding method according to any one of claims 1-5, wherein the mixed metal powder comprises, in mass percent: 95.5-96% of tin powder, 3-3.5% of silver powder and the balance of copper powder;
preferably, the mixed metal powder is added as a powder layer with the area thickness of the welding surface set to be 2-4 mm.
7. The welding method according to any one of claims 1 to 6, wherein the infiltration treatment in the step (2) is performed by infiltrating the surfaces of the tantalum target and the aluminum alloy back plate by using an ultrasonic infiltration device with power of 400-;
preferably, the time of the infiltration treatment in the step (2) is 15-45 min.
8. The welding method according to any one of claims 1 to 7, wherein the diameter of the copper wire in step (3) is 0.3 to 0.5 mm.
9. The welding method as defined in any one of claims 1-8, wherein the pressure in the pressure cooling in step (3) is 100-400N.
10. Welding method according to any one of claims 1-9, characterized in that it comprises the steps of:
(1) carrying out sand blasting treatment on the welding surface of the tantalum target material, and then carrying out tin plating treatment on the welding surface of the tantalum target material; the grit in the grit blasting comprises No. 60 white corundum; the pressure of the sand blasting treatment is 0.5-0.6 MPa; the vertical distance between the sand blasting port and the welding surface of the tantalum target material in the sand blasting treatment is 80-100 mm; the time of sand blasting is 1-4 min; the roughness of the welding surface of the tantalum target after sand blasting treatment is Ra1-4 μm; the thickness of the tin film in the tin plating film treatment is 5-6 μm;
(2) carrying out copper film plating treatment on the welding surface of the back plate, then carrying out heating treatment on the tantalum target material of the tin film and the back plate of the copper film, then respectively arranging mixed metal powder on the welding surface of the tantalum target material and the welding surface of the back plate, and then carrying out infiltration treatment; the roughness of the welding surface of the back plate before the copper plating film treatment is 0.4-1 μm; the thickness of the copper film in the copper plating film treatment is 3-4 μm; the temperature of the heating treatment is 280-310 ℃; the mixed metal powder comprises the following components in percentage by mass: 95.5-96% of tin powder, 3-3.5% of silver powder and the balance of copper powder; the mixed metal powder is added into a powder layer with the welding surface area thickness of 2-4 mm; the infiltration treatment is to infiltrate the surfaces of the tantalum target material and the aluminum alloy back plate by adopting an ultrasonic infiltration device with the power of 400-800W; the time of the infiltration treatment is 15-45 min;
(3) arranging a copper wire on the back plate after the infiltration treatment, assembling the welding surface of the back plate with the copper wire and the welding surface of the tantalum target material, and pressurizing and cooling to obtain the tantalum target material assembly; the diameter of the copper wire is 0.3-0.5 mm; the pressure in the pressurized cooling is 100-400N.
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