CN113451864A - Terahertz emitter and manufacturing method thereof - Google Patents
Terahertz emitter and manufacturing method thereof Download PDFInfo
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- CN113451864A CN113451864A CN202110712986.5A CN202110712986A CN113451864A CN 113451864 A CN113451864 A CN 113451864A CN 202110712986 A CN202110712986 A CN 202110712986A CN 113451864 A CN113451864 A CN 113451864A
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- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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Abstract
The invention provides a terahertz emitter and a manufacturing method thereof. The terahertz emitter comprises the following components in percentage by weight: 25% -35% of a first component; 45% -55% of clay; 20% -30% of water; wherein the first component is sintered into a sintered body by the following components in percentage by weight: 60% -80% of silicate mineral powder; 5% -15% of graphene powder; 5 to 25 percent of activated carbon powder. The terahertz emitter sintered by the materials has the emissivity reaching or even exceeding 0.95, and becomes an ideal black body.
Description
Technical Field
The invention relates to a terahertz emitter and a manufacturing method thereof.
Background
Terahertz waves are electromagnetic waves having a frequency of about 1 megahz (1 thz is equal to 10 to the power of 12) and a wavelength of 3 μm to 1mm (1,000 μm) between optical and electric waves, and have the same straight-going properties as optical waves and the similar penetration and absorption properties as electric waves.
Far infrared is a non-interference terahertz, which has almost no penetrability and internal absorbability, but because a part of the far infrared can be absorbed by the surface of a substance, the far infrared can improve the surface temperature of the skin of a living body and activate blood circulation, thereby promoting the activity of the living body, and is also called as 'growing light'.
In contrast to far infrared rays, terahertz waves having a relatively long wavelength are also called ultra-far infrared rays, and can be directly absorbed by molecules and atoms of an inorganic substance, an organic substance, and a genetic gene (DNA) of a cell inside a substance to enhance lattice vibration energy (activation or activation). The rearrangement of the molecular crystal structure leads to the denaturation of the physical properties of the organism itself. It is also called "material-denatured light" or "life light".
Natural terahertz light waves are generated by the thermal vibration of crystalline lattices of organic molecules in natural minerals, inorganic substances, life and living organisms and living bodies. However, the terahertz waves emitted by these natural substances have low average emissivity and emit a small amount of radiation. It is confirmed by research that when a strong non-interference terahertz wave artificially emitted by an electronic circuit is irradiated on an object, lattice vibration of substance molecules and atoms becomes violent, arrangement of a crystal structure changes, and meanwhile, the radiation amount and average emissivity of the terahertz wave are increased, and even a part of the substance is increased to be more than 0.95, namely the average emissivity of an ideal blackbody.
In the prior art, there are some apparatuses or technical documents for treating an affected part or insomnia of a human body by using terahertz waves, for example, chinese patent inventions: CN105209112B, a potential variable medical device, which utilizes an LC parallel circuit to connect an ac power source in series, and can output a superimposed wave to a conductive system electrode plate, so that the conductive system electrode plate emits a variable electric field, and at the same time, a far infrared radiation layer is disposed on the conductive system electrode plate, so that far infrared radiation energy synergistically enhanced by the variable electric field can be emitted to a patient.
However, in the existing technologies or related products on the market, such as a life irradiator, a medical infrared irradiator, a health spectrum barrel, an infrared spectrum treatment room, an electric heating mattress, etc., the radiation amount and the average emissivity of the original terahertz waves are not high, even if the terahertz waves are irradiated by external strong non-interference terahertz waves, the improvement amount of the radiation amount and the average emissivity of the terahertz waves is not large, and the use requirements or the desired effects cannot be met, which needs to be further improved.
Disclosure of Invention
In order to solve the technical problems, the invention provides a terahertz emitter with high radiation quantity and average emissivity of terahertz waves and a manufacturing method thereof.
In a first aspect, a terahertz emitter is provided, which includes the following components in percentage by weight:
25% -35% of a first component;
45% -55% of clay;
20% -30% of water;
wherein the first component is sintered into a sintered body by the following components in percentage by weight:
60% -80% of silicate mineral powder;
5% -15% of graphene powder;
5 to 25 percent of activated carbon powder.
The terahertz emitter sintered by the materials has the emissivity reaching or even exceeding 0.95, and becomes an ideal black body.
Preferably, the silicate mineral powder is at least one of basalt, andesite, quartz coarse rock and quartz pyrochlore.
Preferably, the activated carbon powder is one or more of coconut shell activated carbon, bamboo activated carbon, steel activated carbon and mineral activated carbon
Preferably, the particle size of the silicate mineral powder is 20-100 microns.
Preferably, the particle size of the graphene powder is 1-50 microns. The single-layer stripping ratio of the graphene powder is more than 85%.
Preferably, the activated carbon powder is 1 micron to 50 microns. The activated carbon provides a frame for a multi-polar reaction system of the functional composite material, greatly disperses functional groups of the functional composite material, increases the specific surface area and improves the efficiency of the multi-polar reaction system, and therefore, the activated carbon powder is neededThe volume index is iodine value more than or equal to 950mg/g, methylene blue value benzene adsorption more than or equal to 120mg/g, specific surface area more than or equal to 1000m2(g), the mechanical strength is more than or equal to 90 percent.
Preferably, the graphene substrate comprises a substrate which is a semiconductor or graphene. The substrate is 3mm-5mm thick, polished and arranged at the bottom of the sintered body in a clinging manner. The semiconductor substrate includes one of silicon, germanium, selenium, and the like.
Preferably, the device further comprises a conductive metal plate for connecting a power supply. The thickness of the conductive metal plate is 1mm-2mm, and the conductive metal plate is arranged at the bottom of the substrate.
Preferably, one end of the conductive metal plate is provided with two positive and negative power supply connecting wires. The conductive metal plate, the substrate and the ceramic sintered plate are fixed together by screws.
Preferably, the thickness of the sintered body is 4mm to 6mm according to practical use requirements.
In a second aspect, a method for manufacturing a terahertz emitter is provided, including:
grinding silicate minerals into powder, adding graphene powder and activated carbon powder, and sintering at 1200-1500 ℃ for 20-28 hours in a high-temperature oxygen-free environment to obtain a primary sintered body.
The primary sintered body is ground to a powder having a particle size of 20 to 50 μm.
Adding 45-55 wt% of clay and 20-30 wt% of water, mixing and kneading uniformly, and solidifying by using a mould.
Sintering in a high-temperature furnace at 850-1360 ℃ to obtain the terahertz emitter.
As is apparent from the above description of the present invention, the present invention has the following advantageous effects:
1. the emissivity of the terahertz emitter obtained by the invention can reach or even exceed 0.95, and the terahertz emitter becomes an ideal blackbody;
2. the terahertz emitter is simple in material and manufacturing process, and meets use requirements at low cost.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention.
Wherein:
fig. 1 is a schematic circuit diagram of a terahertz transmission device;
FIG. 2 is a schematic diagram of energy transmission of a terahertz transmission device;
the labels in fig. 1 and 2 are: sintered body 1, substrate 2, conductive metal plate 3.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention clearer and clearer, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The first embodiment is as follows:
the terahertz emitter comprises the following components in percentage by weight:
25% -35% of a first component;
45% -55% of clay;
20% -30% of water;
wherein the first component is sintered into a sintered body 1 from the following components in weight percent:
60% -80% of silicate mineral powder;
5% -15% of graphene powder;
5 to 25 percent of activated carbon powder.
The specific gravity of the material can be:
a first component, 25%; 55% of clay; 20% of water.
Wherein the first component is sintered into a sintered body 1 from the following components in weight percent:
silicate mineral powder, 60%; 15% of graphene powder; 25% of activated carbon powder.
Or:
a first component, 35%; clay, 45%; 20% of water.
Wherein the first component is sintered into a sintered body 1 from the following components in weight percent:
silicate mineral powder, 70%; 15% of graphene powder; 15% of activated carbon powder.
Or:
a first component, 30%; 50% of clay; 20% of water.
Wherein the first component is sintered into a sintered body 1 from the following components in weight percent:
silicate mineral powder, 65%; 15% of graphene powder; 20% of activated carbon powder.
Through detection, the emission rate of the terahertz emitter sintered by the materials can reach or even exceed 0.95, and the terahertz emitter becomes an ideal black body.
In this embodiment, the silicate mineral powder is at least one of basalt, andesite, quartz coarse rock, and quartz pyrochlore, and has a particle size of 20-100 μm.
The activated carbon powder is one or more of coconut shell activated carbon, bamboo activated carbon, steel activated carbon and mineral activated carbon, and the particle size is 1-50 microns. The indexes of the activated carbon powder are that the iodine value is more than or equal to 950mg/g, the methylene blue value is more than or equal to 120mg/g, the benzene adsorption is more than or equal to 1000m, and the specific surface area is more than or equal to2(g), the mechanical strength is more than or equal to 90 percent.
The particle size of the graphene powder is 1-50 micrometers, and the single-layer stripping ratio is more than 85%.
Example two:
on the basis of the first embodiment, the terahertz emitting device comprises a substrate 2, wherein the substrate is a semiconductor or graphene. The substrate is 3mm-5mm thick and is arranged at the bottom of the sintered body in a clinging mode.
The present embodiment employs a semiconductor substrate comprising one of silicon, germanium, selenium, and the like.
Experiments show that the semiconductor substrate can reflect terahertz waves with high efficiency, so the semiconductor substrate is very ideal as a substrate material:
when the sintered body emits the terahertz waves, one part of the terahertz waves is radiated outwards, and the other part of the terahertz waves is emitted to the semiconductor substrate to be reflected repeatedly, so that the terahertz waves are sealed efficiently, and the emissivity of the terahertz waves is improved.
Meanwhile, when the electric field of the semiconductor substrate is changed due to the change of the electric potential of the semiconductor substrate, the electron arrangement of the atoms constituting the semiconductor is affected, the outer electron orbitals of the atoms of the raw material are changed, and a quantum wave based on the vibration of protons is radiated, so that the vibration of molecules and atoms of the ceramic sintered plate in contact with the semiconductor substrate becomes severe, a large number of the vibrations of atoms and electrons are gathered to form a polymer, and further, a terahertz wave is generated, and the vibration of atoms and molecules of cellular tissues, body water, and the like of the human body is promoted to activate the cellular tissues and the like, thereby promoting the blood circulation, enabling vigorous metabolism, and rapidly curing human diseases and affected parts.
In other embodiments, a graphene substrate is selected.
Graphene has very good optical properties, with a system yield of about 2.3% over a wide wavelength range, and appears almost transparent. In the thickness range of a few layers of graphene, the absorption rate is increased by 2.3% for each layer of thickness increase.
The large-area graphene film also has excellent optical characteristics, and the optical characteristics of the large-area graphene film change along with the change of the thickness of graphene, which is an unusual low-energy electronic structure of single-layer graphene. And applying voltage to the dual-gate double-layer graphene field effect transistor at room temperature, wherein the band gap of the graphene can be adjusted between 0-0.25 eV. And applying a magnetic field, and enabling the optical response of the graphene nanoribbon to be tunable to a terahertz range.
And the conductive metal plate 3 is used for connecting a power supply. The thickness of the conductive metal plate is 1mm-2mm, and the conductive metal plate is arranged at the bottom of the substrate.
When the terahertz emitter is used, the conductive metal plate is connected with an alternating current power supply through an LC parallel circuit, an electromagnetic wave generator is adopted to apply electromagnetic waves to the LC parallel circuit, the LC parallel circuit generates induced electromotive force, the induced electromotive force and the output voltage of the alternating current power supply are superposed to form a superposed wave V, and the superposed wave acts on the terahertz emitter, which can refer to fig. 1 and 2, but the circuit connection mode is not limited to the connection mode in the figures.
Example three:
provided is a method for manufacturing a terahertz emitter, which comprises the following steps:
and S10, grinding the silicate mineral into powder, adding the graphene powder and the activated carbon powder, and sintering at the high temperature of more than 1200 ℃ in an oxygen-free environment for 20-28 hours to obtain a primary sintered body.
And S20, grinding the primary sintered body into powder with the grain diameter of 20-50 microns.
S30, adding 45-55 wt% of clay and water, mixing and kneading uniformly, and solidifying by a mould.
And sintering the mixture in a high-temperature furnace with the temperature of above 850 ℃ to obtain the terahertz emitter described in the first embodiment.
The invention has been described above with reference to the accompanying drawings, it is obvious that the invention is not limited to the specific implementation in the above-described manner, and it is within the scope of the invention to apply the inventive concept and solution to other applications without substantial modification.
Claims (10)
1. A terahertz emitter is characterized by comprising the following components in percentage by weight:
25% -35% of a first component;
45% -55% of clay;
20% -30% of water;
wherein the first component is sintered into a sintered body by the following components in percentage by weight:
60% -80% of silicate mineral powder;
5% -15% of graphene powder;
5 to 25 percent of activated carbon powder.
2. The terahertz emitter of claim 1, wherein the silicate mineral powder is at least one of basalt, andesite, quartz coarse rock and quartz sphalerite.
3. The terahertz emitter according to claim 1, wherein the activated carbon powder is one or more of coconut shell activated carbon, bamboo activated carbon, steel activated carbon and mineral activated carbon.
4. The terahertz emitter according to claim 1, wherein the silicate mineral powder has a particle size of 20-100 microns.
5. The terahertz emitter according to claim 1, wherein the graphene powder has a particle size of 1-50 microns; the single-layer stripping ratio of the graphene powder is more than 85%.
6. The terahertz emitter according to claim 1, wherein the activated carbon powder is 1-50 microns; the indexes of the activated carbon powder are that the iodine value is more than or equal to 950mg/g, the methylene blue value is more than or equal to 120mg/g, the benzene adsorption is more than or equal to 1000m, and the specific surface area is more than or equal to2(g), the mechanical strength is more than or equal to 90 percent.
7. The terahertz emitter of claim 1, comprising a substrate, wherein the substrate is a semiconductor or graphene; the substrate is 3mm-5mm thick and is arranged at the bottom of the sintered body in a clinging mode.
8. The terahertz emitter of claim 7, further comprising a conductive metal plate; the thickness of the conductive metal plate is 1mm-2mm, and the conductive metal plate is arranged at the bottom of the substrate.
9. The terahertz emitter according to claim 1, wherein the thickness of the sintered body is 4mm-6 mm.
10. A method for manufacturing a terahertz emitter is characterized by comprising the following steps:
grinding silicate minerals into powder, adding graphene powder and activated carbon powder, and sintering at 1200-1500 ℃ in a high-temperature oxygen-free environment for 20-28 hours to obtain a primary sintered body;
grinding the primary sintered body into powder with the grain diameter of 20-50 microns;
adding 45-55 wt% of clay and 20-30 wt% of water, mixing and kneading uniformly, and solidifying by adopting a mold;
sintering in a high-temperature furnace at 850-1360 ℃ to obtain the terahertz emitter as claimed in any one of claims 1 to 9.
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| CN202110712986.5A CN113451864A (en) | 2021-06-25 | 2021-06-25 | Terahertz emitter and manufacturing method thereof |
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| CN202110712986.5A CN113451864A (en) | 2021-06-25 | 2021-06-25 | Terahertz emitter and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114262220A (en) * | 2022-01-17 | 2022-04-01 | 浙江南缘生物科技有限公司 | Honeycomb body capable of generating 0.9-3.6Thz terahertz continuous wave and preparation method thereof |
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- 2021-06-25 CN CN202110712986.5A patent/CN113451864A/en active Pending
Patent Citations (5)
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| KR20120059314A (en) * | 2010-11-30 | 2012-06-08 | 전자빔기술센터 주식회사 | THz Emitter/Detector System having one Tx/Rx module |
| JP2015175957A (en) * | 2014-03-14 | 2015-10-05 | 日本電信電話株式会社 | frequency variable filter |
| CN105428964A (en) * | 2015-11-11 | 2016-03-23 | 清华大学 | Graphene terahertz emitter and manufacturing method thereof |
| CN106883896A (en) * | 2017-03-22 | 2017-06-23 | 四川复力环保科技有限公司 | Terahertz emission material and its preparation method and application |
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