CN113448181A - Alignment method for double exposure - Google Patents

Alignment method for double exposure Download PDF

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Publication number
CN113448181A
CN113448181A CN202110863323.3A CN202110863323A CN113448181A CN 113448181 A CN113448181 A CN 113448181A CN 202110863323 A CN202110863323 A CN 202110863323A CN 113448181 A CN113448181 A CN 113448181A
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CN
China
Prior art keywords
exposure
pattern
target
exposure pattern
pair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110863323.3A
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Chinese (zh)
Inventor
王绪胜
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Suzhou Industrial Park Nano Industry Technology Research Institute Co ltd
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Suzhou Industrial Park Nano Industry Technology Research Institute Co ltd
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Publication date
Application filed by Suzhou Industrial Park Nano Industry Technology Research Institute Co ltd filed Critical Suzhou Industrial Park Nano Industry Technology Research Institute Co ltd
Priority to CN202110863323.3A priority Critical patent/CN113448181A/en
Publication of CN113448181A publication Critical patent/CN113448181A/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The invention relates to a double exposure alignment method, which comprises the following steps: carrying out primary exposure on a target object to form a first exposure pattern on the target object, wherein the first exposure pattern is provided with a first pair of sites; and carrying out secondary exposure on the target, wherein the secondary exposure is based on the first pair of sites so as to form a second exposure pattern on the target, and the second exposure pattern is overlapped with the first exposure pattern. The method includes the steps of forming a first exposure pattern by performing a first exposure on a target, setting a first pair of sites on the first exposure pattern, performing a second exposure on the target based on the first pair of sites, and forming a second exposure pattern such that the second exposure pattern coincides with the first exposure pattern. The alignment method is fast and accurate.

Description

Alignment method for double exposure
Technical Field
The application relates to a double exposure alignment method.
Background
In the current display technology, the precision of the preparation technology is higher and higher, and photoetching is an essential link in the process of the display technology. In this process, multiple exposures are usually combined, and the most important of the multiple exposures is to make the patterns of the multiple exposures coincide. In the existing color film substrate, alignment marks are arranged on the inner side of a glass substrate, such as BM marks, when patterns are formed on two sides of the glass substrate, the BM marks arranged on the inner side are used as alignment points identified by an exposure machine to be exposed in an external exposure mode, but because the glass substrate is thick, the focus of the exposure machine is formed to be smaller than the thickness of the glass substrate, so that the alignment marks on the inner side are difficult to focus, and alignment failure is caused.
Disclosure of Invention
The invention aims to provide a quick and accurate double-exposure alignment method.
In order to achieve the purpose, the invention provides the following technical scheme: a method for double exposure alignment, the method comprising:
carrying out one-time exposure on a target object to form a first exposure pattern on the target object, wherein the first exposure pattern is provided with a first pair of sites;
and carrying out secondary exposure on the target object, wherein the secondary exposure is based on the first pair of sites so as to form a second exposure pattern on the target object, and the second exposure pattern is superposed with the first exposure pattern.
Further, the "the second exposure is based on the first pair of sites to form a second exposure pattern on the target" specifically includes:
in the secondary exposure, a lens of the exposure machine is provided with a second docking point, and a projection formed by a light source of the exposure machine through the second docking point is coincided with the first docking point;
and forming the second exposure pattern on the target object.
Further, the method further comprises:
in the one-time exposure, a drawing grid is arranged between a lens of the exposure machine and the target, a light source of the exposure machine forms a grid on the target through the lens and the drawing grid, and the first exposure graph is sorted based on the grid.
Further, the "the second exposure is based on the first pair of sites to form a second exposure pattern on the target" specifically includes:
in the secondary exposure, an exposure machine identifies the first docking point so that a second exposure pattern formed by a light source of the exposure machine through the lens coincides with the first exposure pattern.
Further, the method further comprises:
in the one-time exposure, a mark point forming the first pair of sites is arranged on the lens.
Further, the method further comprises:
the first docking points are formed at sides of the first exposure pattern.
The invention has the beneficial effects that: the method includes the steps of forming a first exposure pattern by performing a first exposure on a target, setting a first pair of sites on the first exposure pattern, performing a second exposure on the target based on the first pair of sites, and forming a second exposure pattern such that the second exposure pattern coincides with the first exposure pattern. The alignment method is fast and accurate.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical solutions of the present invention more clearly understood and to implement them in accordance with the contents of the description, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.
Drawings
FIG. 1 is a schematic view of the exposure mode of the Stepper exposure machine according to the present invention;
FIG. 2 is a schematic view of the Stepper exposure machine shown in FIG. 1 exposing sequentially on a target;
FIG. 3 is a schematic view of the exposure pattern of the Aligner exposure machine shown in the present invention;
FIG. 4 is a schematic illustration of the alignment point of the Aligner exposure shown in the present invention;
FIG. 5 is a flowchart illustrating a double exposure alignment method according to the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in the orientation or positional relationship indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be considered limiting of the scope of the present application. Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature.
In the description of the invention of the present application, the meaning of "a plurality" is two or more unless otherwise specified.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art through specific situations.
The alignment method of the double exposure according to a preferred embodiment of the present invention includes two different exposure machines, and the two different exposure machines expose on the same target 30 and make the patterns exposed by the two different exposure machines coincide with each other. In this embodiment, the two exposure machines are a Stepper exposure machine 10 and an Aligner exposure machine 20, respectively.
In the present embodiment, for the sake of convenience of distinction, the light source of the Stepper exposure machine 10 is defined as the first light source 101, and the light source of the Aligner exposure machine 20 is defined as the second light source 201; the lens of Stepper exposure machine 10 is defined as first lens 103 and the lens of Aligner exposure machine 20 is defined as second lens 202.
Specifically, referring to fig. 1 and 2, the Stepper exposure machine 10 includes a stage 102 for placing the object 30, a first lens 103 disposed between the object 30 and the first light source 101, a drawing grid 104, and a focusing lens 105. The first lens 103, the drawing grid 104 and the focusing lens 105 are arranged in sequence from top to bottom. The first light source 101 sequentially passes through the first lens 103, the patterning grid 104, and the condenser lens 105 to form a grid and an exposure pattern on the object 30. The above exposure step is repeated a plurality of times to expose the entire object 30 stepwise on the object 30 in shot as a basic unit, thereby realizing transfer of a plurality of repeated patterns. The purpose of the patterning grid 104 is to order the exposure patterns based on the grid on the target 30 to facilitate alignment for the second exposure.
Referring to fig. 3, the Aligner exposing machine 20 includes an object 30, a photoresist layer 204 and a reticle 203 disposed on the object 30, and a second lens 202 disposed between the reticle 203 and a second light source 201. The second light source 201 forms several exposure patterns on the target 30 at one time through the second lens 202, thereby realizing pattern transfer. In this embodiment, the target 30 is a wafer 30, and the mask 203 may be a film or a filter, which is not limited herein.
Referring to fig. 5, the double exposure alignment method at least includes the following steps:
step 501, performing one exposure on a target to form a first exposure pattern on the target, wherein the first exposure pattern has a first pair of sites.
Step 502, performing a second exposure on the target object, where the second exposure is based on the first pair of sites to form a second exposure pattern on the target object, and the second exposure pattern is overlapped with the first exposure pattern.
When the first exposure of the double exposure is Stepper exposure and the second exposure is Aligner exposure, at least one first mark point is arranged on the first lens 103 of the Stepper exposure machine 10, and the first light source 101 of the Stepper exposure machine 10 forms a grid, a plurality of first exposure patterns and first pair points which are sequentially arranged on the wafer 30 based on the grid through the first lens 103 and the drawing grid 104. Referring to fig. 4, in the present embodiment, two first alignment points (a in fig. 4) are disposed, and the two first alignment points are respectively formed in the grids on two sides of the wafer 30 to facilitate alignment of the second exposure. In other embodiments, the number and the position of the first pair of sites may be other, and the number and the position of the first pair of sites are not specifically limited herein, depending on the actual situation. During the second exposure, a second mark point which is the same as the first mark point is arranged on the second lens 202 of the Aligner exposure machine 20, the second light source 201 forms a second pair of points and a second exposure pattern through the second lens 202 of the Aligner exposure machine 20, and the projection of the formed second pair of points is overlapped with the first pair of points on the wafer 30 after the first exposure, so that the second exposure pattern formed on the wafer 30 after the first exposure is overlapped with the first exposure pattern, thereby completing the alignment of the double exposure.
In the second embodiment, when the first exposure of the double exposure is Aligner exposure and the second exposure is Stepper exposure, the exposure modes of the two exposure machines are substantially the same as those of the first embodiment, and the alignment method is different. The differences are as follows: when Aligner exposure machine 20 performs exposure on wafer 30, it is necessary to set the first mark points required by Stepper exposure machine 10 on second lens 202 of Aligner exposure machine 20, and second light source 201 forms the first exposure pattern and the first pair of sites required by Stepper exposure machine 10 on wafer 30 through second lens 202 of Aligner exposure machine 20 to realize one exposure. When the Stepper exposure machine 10 is used to perform the second exposure on the wafer 30, the Stepper exposure machine 10 automatically recognizes the first alignment point on the wafer 30 required by the Stepper exposure machine 10, and thus the alignment of the double exposure can be realized. Compared with the prior art, the two double-exposure alignment methods provided by the invention are simple, fast and high in efficiency.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (6)

1. A method for aligning double exposure, comprising:
carrying out one-time exposure on a target object to form a first exposure pattern on the target object, wherein the first exposure pattern is provided with a first pair of sites;
and carrying out secondary exposure on the target object, wherein the secondary exposure is based on the first pair of sites so as to form a second exposure pattern on the target object, and the second exposure pattern is superposed with the first exposure pattern.
2. The method according to claim 1, wherein the second exposure based on the first pair of sites to form a second exposure pattern on the target is specifically:
in the secondary exposure, a lens of the exposure machine is provided with a second docking point, and a projection formed by a light source of the exposure machine through the second docking point is coincided with the first docking point;
and forming the second exposure pattern on the target object.
3. The method of claim 2, wherein the method further comprises:
in the one-time exposure, a drawing grid is arranged between a lens of the exposure machine and the target, a light source of the exposure machine forms a grid on the target through the lens and the drawing grid, and the first exposure graph is sorted based on the grid.
4. The method according to claim 1, wherein the second exposure based on the first pair of sites to form a second exposure pattern on the target is specifically:
in the secondary exposure, an exposure machine identifies the first docking point so that a second exposure pattern formed by a light source of the exposure machine through the lens coincides with the first exposure pattern.
5. The method of any one of claims 2-4, further comprising:
in the one-time exposure, a mark point forming the first pair of sites is arranged on the lens.
6. The method of claim 5, wherein the method further comprises:
the first docking points are formed at sides of the first exposure pattern.
CN202110863323.3A 2021-07-29 2021-07-29 Alignment method for double exposure Pending CN113448181A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW451295B (en) * 2000-05-23 2001-08-21 Taiwan Semiconductor Mfg Method to calibrate the alignment system of exposure machine and lens device
CN103529658A (en) * 2013-10-16 2014-01-22 中国科学院半导体研究所 Method for aligning square wafer in primary photolithography technique
CN105824198A (en) * 2015-01-04 2016-08-03 上海微电子装备有限公司 Multiple exposure method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW451295B (en) * 2000-05-23 2001-08-21 Taiwan Semiconductor Mfg Method to calibrate the alignment system of exposure machine and lens device
CN103529658A (en) * 2013-10-16 2014-01-22 中国科学院半导体研究所 Method for aligning square wafer in primary photolithography technique
CN105824198A (en) * 2015-01-04 2016-08-03 上海微电子装备有限公司 Multiple exposure method

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Application publication date: 20210928