CN113441032B

CN113441032B - Semiconductor process equipment and gas conveying device thereof

Info

Publication number: CN113441032B
Application number: CN202110713403.0A
Authority: CN
Inventors: 朱磊; 纪红; 魏景峰
Original assignee: Beijing Naura Microelectronics Equipment Co Ltd
Current assignee: Beijing Naura Microelectronics Equipment Co Ltd
Priority date: 2021-06-25
Filing date: 2021-06-25
Publication date: 2022-09-16
Anticipated expiration: 2041-06-25
Also published as: CN113441032A

Abstract

The application discloses a semiconductor process device and a gas conveying device thereof, wherein the gas conveying device is used for conveying process gas into a process chamber of the semiconductor process device and comprises a gas mixing component and a gas distributing component, the gas distributing component is arranged in an installation through hole on a cover plate of the process chamber, the gas distributing component is matched with the installation through hole to form a gas distributing channel, the gas mixing component is arranged on the cover plate, a gas mixing cavity is arranged in the gas mixing component, and the gas distributing channel is communicated with the gas mixing cavity and the process chamber; a plurality of blocking parts are arranged in the gas mixing cavity, and the plurality of blocking parts form at least two groups of gas blocking layers which are distributed along the axial direction of the gas mixing cavity; each gas barrier layer comprises at least two barriers arranged around the axial direction at intervals; for any two adjacent groups of gas barrier layers, the axial projection of at least one barrier member of one gas barrier layer covers the spacing region between two adjacent barrier members in the other gas barrier layer. The gas conveying device can improve the mixing degree of different components in the gas.

Description

Semiconductor process equipment and gas conveying device thereof

Technical Field

The application belongs to the technical field of semiconductor processing, and particularly relates to semiconductor process equipment and a gas conveying device thereof.

Background

During the processing of a semiconductor workpiece, it is often necessary to deliver process gases into the process chamber, which may provide a reaction or purge effect to the process chamber environment. Taking the atomic layer deposition process as an example, a plurality of different source gases are generally required to be introduced into the process chamber, so that the source gases react with each other to form an atomic film deposited on the surface of the substrate. Be provided with the gas mixing chamber usually among the present mixer, different source gases are sent into the gas mixing chamber through the air inlet pipeline under the effect of carrier gas, source gases and carrier gas mix at the gas mixing intracavity, and adopt the structural style of dividing the four ways of one way, the four ways divides the eight ways, further mix and disperse the gas after preliminary mixing, finally sent into the technology intracavity, this kind mixes the gas mode comparatively primitive, the gas range of flowing in the mixing process in each mixing pipeline is relatively limited, the mixing degree is relatively poor.

Disclosure of Invention

The application discloses semiconductor process equipment and gas conveying device thereof can promote the mixing degree of different components in the gas.

In order to solve the above problem, the embodiments of the present application are implemented as follows:

in a first aspect, an embodiment of the present application provides a gas delivery device in semiconductor processing equipment, configured to deliver a process gas into a process chamber of the semiconductor processing equipment, where the gas delivery device includes a gas mixing component and a gas distribution component, the gas distribution component is disposed in a mounting through hole on a cover plate of the process chamber, the gas distribution component and the mounting through hole cooperate to form a gas distribution channel, the gas mixing component is disposed on the cover plate, and a gas mixing cavity is disposed in the gas distribution channel, and the gas distribution channel communicates the gas mixing cavity and the process chamber;

a plurality of blocking parts are arranged in the gas mixing cavity, and the blocking parts form at least two groups of gas blocking layers which are distributed along the axial direction of the gas mixing cavity; any of the gas barrier layers comprises at least two of the barriers spaced around the axial direction; for any two adjacent groups of the gas barrier layers, the projection of at least one barrier member of one gas barrier layer in the axial direction covers the interval area between two adjacent barrier members in the other gas barrier layer.

In a second aspect, embodiments of the present application provide a semiconductor processing apparatus comprising a process chamber and the above-described gas delivery device.

The embodiment of the application provides semiconductor process equipment and a gas conveying device thereof, and the gas conveying device can be used for conveying gas into a process chamber of the semiconductor process equipment. The gas conveying device comprises a gas mixing part and a gas distributing part, the gas mixing part is provided with a gas mixing cavity, the gas mixing cavity is communicated with a gas distributing channel formed by matching the gas distributing part with a mounting through hole of a cover plate of the process chamber, and then communicated with the process chamber, so that gas in the gas mixing cavity can be conveyed into the process chamber through the gas distributing channel.

The gas mixing cavity is internally provided with a plurality of blocking parts, the plurality of blocking parts can form at least two groups of gas blocking layers which are distributed along the axial direction of the gas mixing cavity, and in the two adjacent groups of gas blocking layers, the axial projection of at least one blocking part of one gas blocking layer in the gas mixing cavity covers the interval area between the two adjacent blocking parts in the other gas blocking layer.

In this case, after the gas is fed into the gas mixing cavity, the axial flow of the gas along the gas mixing cavity is blocked by the barriers in the gas blocking layer, so that the gas can only diffuse in the direction perpendicular to the axial direction, and continues to flow downstream from the spacing region between any two adjacent barriers in the gas blocking layer, and when the gas flows from the spacing region in the gas blocking layer located upstream to the gas blocking layer located downstream, the gas is further blocked by the barriers in the gas blocking layer located downstream, so that the gas can only continue to diffuse in the direction perpendicular to the axial direction, and further dispersedly continues to flow downstream from more spacing regions. At above-mentioned in-process, gaseous can be blockked by the piece to flow and the diffusion along the axial direction in perpendicular to gas mixing chamber many times, this can make the gaseous intensive mixing that is located gas mixing chamber different positions department, and make in the gas mixing gas different kinds of gas mix together better, promote the misce bene degree of each component in the gas of mixing gas piece output.

Drawings

The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:

FIG. 1 is a schematic view of an assembly between a gas delivery device and a cover plate as disclosed in an embodiment of the present application;

FIG. 2 is a schematic diagram of a portion of a gas delivery device including a barrier according to an embodiment of the present disclosure;

FIG. 3 is a cross-sectional view of a portion of the structure of a gas delivery device including a barrier according to an embodiment of the present application;

FIG. 4 is a schematic view of a barrier in another orientation in a gas delivery device as disclosed in an embodiment of the present application;

FIG. 5 is a schematic view of the operation of a diverter ring in the gas delivery apparatus disclosed in the embodiments of the present application;

fig. 6 is a schematic structural diagram of a semiconductor processing apparatus disclosed in an embodiment of the present application.

Description of the reference numerals:

110-air mixing piece, 111-air mixing cavity, 120-air inlet pipe,

200-gas distribution piece, 210-conical flow distribution disc, 211-outer peripheral wall, 220-flow distribution ring, 221-outer side wall, 222-inner side wall, 223-gas containing groove, 224-gas distribution hole,

310-barriers, 311-first surface, 312-second surface, 320-center post,

400-air feeding piece, 410-air feeding hole,

510-process chamber, 520-cover plate, 521-mounting through hole, 530-heater.

Detailed Description

In order to make the objects, technical solutions and advantages of the present application more apparent, the technical solutions of the present application will be described in detail and completely with reference to the following specific embodiments of the present application and the accompanying drawings. It should be apparent that the described embodiments are only some of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

Technical solutions disclosed in the embodiments of the present application are described in detail below with reference to the accompanying drawings.

As shown in fig. 1 to 6, embodiments of the present application disclose a gas delivery apparatus, which may be applied in a semiconductor processing device to deliver a process gas into a process chamber 510 of the semiconductor processing device, so as to ensure that a process in the semiconductor processing device can be performed normally. Wherein, the gas conveying device comprises a gas mixing piece 110 and a gas distributing piece 200.

The gas distributing member 200 is disposed in the installation through hole 521 of the cover plate 520 of the process chamber 510, and the gas distributing member 200 is matched with the installation through hole 521 to form a gas distributing channel, so that the gas introduced from the gas mixing member 110 can be dispersed at the gas distributing member 200 to be more uniformly introduced into the process chamber 510. Specifically, the air distribution member 200 may be provided with a plurality of air distribution holes 224. The plurality of gas distribution holes 224 may be uniformly arranged on the gas distribution member 200, the gas distribution member 200 is installed in the installation through hole 521 of the cover plate 520, and the gas introduced from the gas mixing member 110 is uniformly diffused through the plurality of gas distribution holes 224 and is directly or indirectly introduced into the process chamber 510. The specific shape of the gas distributor 200 may be the same as or similar to that of the mounting through hole 521, for example, both may have a rectangular or circular structure, the gas distributor 200 is mounted to the mounting through hole 521, and each gas distribution hole 224 may penetrate through the gas distributor 200 in the axial direction of the mounting through hole 521, so that the process chamber 510 can communicate with the outside of the process chamber 510 through the plurality of gas distribution holes 224.

The gas mixing member 110 is also disposed on the mounting cover plate 520, and the gas mixing member 110 is provided with a gas mixing cavity 111, specifically, the gas mixing cavity 111 is a regular structure, and the source gas and the carrier gas can be mixed in the gas mixing cavity 111, so that the source gas and the carrier gas can be uniformly mixed. The gas distribution channel communicates the gas mixing chamber 111 and the process chamber 510, so that the process gas in the gas mixing chamber 111 can be supplied into the process chamber 510 from the gas distribution channel. Specifically, the gas mixing member 110 may be fixed on the cover plate 520 by screws or welding, or the gas mixing member 110 may also be fixed to the gas distributing member 200, so that the purpose of fixing the gas mixing member 110 and the cover plate 520 is achieved by the fixed relationship between the gas distributing member 200 and the cover plate 520.

In order to improve the uniform mixing degree of the gases, as shown in fig. 1 and 2, a plurality of blocking members 310 are installed in the gas mixing chamber 111, and each blocking member 310 can provide a blocking effect for the gases in the gas mixing chamber 111. The plurality of barriers 310 form at least two sets of gas barrier layers distributed along the axial direction of the gas mixing cavity 111, and the gas barrier layers act together to ensure that the gas flowing along the axial direction of the gas mixing cavity 111 in the gas mixing cavity 111 is mixed more uniformly. Note that the axial direction of the air mixing chamber 111 is parallel to the axial direction of the mounting through hole 521.

Further, each gas barrier layer includes at least two barriers 310 disposed at intervals in the axial direction around the gas mixing chamber 111. Specifically, the shape of the barrier 310 may be a triangle, a rectangle, a semicircle, or the like, and the barrier 310 may be a sheet-like or block-like structural member, such that the barrier 310 has a gas blocking surface toward the direction in which the gas is introduced, to block the flow of the gas therethrough. In the same gas barrier, a plurality of barriers 310 spaced axially around the gas mixture chamber 111 may work together so that gas can only continue to flow from the gap between any adjacent two barriers 310.

Meanwhile, for any two adjacent gas barrier layers, the projection of at least one barrier 310 of one gas barrier layer in the axial direction of the gas mixing cavity 111 covers the interval area between two adjacent barrier 310 in the other gas barrier layer. That is to say, the blocking members 310 of any two adjacent gas blocking layers at least include one blocking member 310 distributed in a staggered manner, in this case, during the process of the gas flowing along the axial direction of the gas mixing cavity 111, the blocking positions of the blocking members 310 of any two adjacent gas blocking layers on the gas are different, so that the flow path of the gas can be further changed, the gas flows out from the gas mixing cavity 111, and the mixing uniformity when the gas flows into the gas distribution channel is higher.

Specifically, taking an example that each gas barrier layer includes two barriers 310, the two barriers 310 in each gas barrier layer may have the same shape and size, and the two barriers 310 may be symmetrically disposed. On this basis, when two adjacent gas barrier layers are arranged, the two blocking parts 310 in one gas barrier layer can be arranged corresponding to two spacing areas formed by the two blocking parts 310 in the other gas barrier layer respectively, so that the blocking positions of the respective blocking parts 310 of the two gas barrier layers are different, the blocking effect of all the blocking parts 310 on gas is improved, and the mixing uniformity degree of the gas flowing through the gas mixing cavity 111 is further improved.

More specifically, the first barrier layer and the second barrier layer are included in any two adjacent groups of gas barrier layers, and the first barrier layer is positioned on the side of the second barrier layer, which faces away from the gas distribution channel, that is, the first barrier layer is farther away from the gas distribution channel than the second barrier layer, and the first barrier layer is positioned upstream of the second barrier layer along the flow path of the gas. For the first barrier layer and the second barrier layer, the projection of at least one barrier 310 of the second barrier layer in the axial direction of the gas mixing chamber 111 covers the spacing region between two adjacent barriers 310 in the first barrier layer, which can further ensure that when gas flows from the spacing region between two barriers 310 in the first barrier layer to the second barrier layer, the corresponding barrier 310 in the second barrier layer can reliably provide a barrier effect for the gas.

Embodiments of the present application provide a semiconductor processing apparatus and a gas delivery device thereof, which can deliver gas into a process chamber 510 of the semiconductor processing apparatus. The gas conveying device comprises a gas mixing piece 110 and a gas distributing piece 200, wherein the gas mixing piece 110 is provided with a gas mixing cavity 111, the gas mixing cavity 111 is communicated with a gas distributing channel formed by matching the gas distributing piece 200 with a mounting through hole 521 of a cover plate 520 of the process chamber 510, and further communicated with the process chamber 510, so that gas in the gas mixing cavity 111 can be conveyed into the process chamber 510 through the gas distributing channel.

The gas mixing cavity 111 is internally provided with a plurality of blocking parts 310, and the plurality of blocking parts 310 can form at least two groups of gas blocking layers distributed along the axial direction of the gas mixing cavity 111, wherein in the two adjacent groups of gas blocking layers, the projection of at least one blocking part 310 of one gas blocking layer in the axial direction of the gas mixing cavity 111 covers the interval area between two adjacent blocking parts 310 in the other gas blocking layer.

In this case, after the gas is fed into the gas mixing chamber 111, the axial flow of the gas along the gas mixing chamber 111 is blocked by the barriers 310 in the gas barrier layer, so that the gas can only diffuse in the direction perpendicular to the axial direction, and the gas continues to flow downstream from the spacing region between any two adjacent barriers 310 in the gas barrier layer, and when the gas flows from the spacing region in the gas barrier layer located upstream to the gas barrier layer located downstream, the gas is further blocked by the barriers 310 in the gas barrier layer located downstream, so that the gas can only continue to diffuse in the direction perpendicular to the axial direction, and further dispersedly continues to flow downstream from more spacing regions. In the above process, the gas may be blocked by the blocking member 310, so as to flow and diffuse in the direction perpendicular to the axial direction of the gas mixing cavity 111 for multiple times, which may enable the gas located at different positions in the gas mixing cavity 111 to be fully mixed, and enable different kinds of gas in the mixed gas to be better mixed together, thereby improving the mixing uniformity of each component in the gas output from the gas mixing member 110.

Further, for any two adjacent gas barrier layers, the projection of any one barrier 310 in one gas barrier layer in the axial direction of the gas mixing chamber 111 covers the interval area between the corresponding two adjacent barrier 310 in the other gas barrier layer. That is to say, each blocking part 310 of one gas barrier layer in two adjacent gas barrier layers corresponds to the spacing region in the other gas barrier layer one by one, so that it is ensured that the gas flowing out from any spacing region in the gas barrier layers is blocked by the corresponding blocking part 310 in the other gas barrier layer, the blocking effect of the gas is comprehensively improved, and the mixing uniformity of different types of gas in the gas mixing chamber 111 is improved.

As described above, the two adjacent gas blocking layers include the first blocking layer and the second blocking layer, and based on the above embodiment, the projection of any one of the blocking members 310 in the axial direction of the gas mixing cavity 111 in the second blocking layer can cover the spacing region between the two corresponding adjacent blocking members 310 in the first blocking layer, so as to ensure that the blocking member 310 in the second blocking layer can always provide a blocking effect for the gas flowing out from the corresponding spacing region in the upstream first blocking layer during the flowing process of the gas.

As described above, the plurality of blocking members 310 disposed around the axial direction of the air mixing chamber 111 are provided in the air mixing chamber 111, and specifically, the air mixing chamber 111 may be surrounded by a cylindrical structure, and one end of each blocking member 310 may be connected to the inner wall of the air mixing chamber 111, so that the blocking member 310 can be fixed at a predetermined position. Alternatively, the other ends of the barriers 310 are spaced apart from each other. In order to improve the uniform mixing degree of the gas and prevent the gas from flowing to the gas distribution channel from the gap formed between the other ends of the plurality of blocking members 310, in another embodiment of the present application, one ends of the plurality of blocking members 310 departing from the inner wall of the gas mixing chamber 111 may be connected to each other, so that the gas can only flow from the spacing region between two adjacent blocking members 310, and the uniform mixing degree of the gas in the gas mixing chamber 111 can be improved.

In yet another embodiment of the present application, optionally, a middle post 320 is disposed in the gas mixing cavity 111, and an axis of the middle post 320 coincides with an axis of the gas mixing cavity 111, that is, the middle post 320 extends along an axial direction of the gas mixing cavity 111. Moreover, any blocking member 310 is connected between the middle post 320 and the inner wall of the air mixing chamber 111. In this case, the gas cannot flow from the center of the gas mixing cavity 111, so that the gas can only flow in the annular space enclosed between the middle post 320 and the inner wall of the gas mixing cavity 111, and because a plurality of gas blocking layers are arranged in the annular space, the interference degree between the gas and the gas blocking layers is higher when the gas flows in the annular space, and the uniform mixing degree of the gas flowing through the gas mixing cavity 111 is further improved.

Specifically, the shape of the cross section of the center pillar 320 perpendicular to the axial direction of the air mixing cavity 111 may be an irregular pattern or a regular pattern. Optionally, the cross section of the center pillar 320 may be circular or rectangular, etc., to form the air mixing cavity 111, and the air mixing member 110 is specifically a cylindrical structure, and the air mixing member 110, the center pillar 320, and the blocking member 310 may all be made of metal materials, so as to improve the structural strength of the whole air mixing member 110. The blocking member 310, the middle post 320 and the inner wall of the gas mixing cavity 111 can be connected with each other by welding or the like, so that on one hand, the installation stability of the blocking member 310 is ensured, on the other hand, the probability that gas flows from the gap between the blocking member 310 and the middle post 320 and the gap between the blocking member 310 and the inner wall of the gas mixing cavity 111 is reduced, and the gas can only continuously flow from the interval region between two adjacent blocking members 310.

More specifically, the inner wall of the air mixing chamber 111 may be a circular cylindrical structure, and correspondingly, the center pillar 320 is a cylindrical structural member, and the center pillar 320 is disposed at the axis of the air mixing chamber 111. In this case, when the gas flows in the gas mixing chamber 111, the degree of obstruction of the inner wall of the gas mixing chamber 111 to the gas is relatively small, and the flowing smoothness of the gas is maximally ensured under the condition of improving the uniform mixing degree of the gas.

As described above, the air mixing cavity 111 may be a circular structure, and one ends of the blocking members 310 departing from the inner wall of the air mixing cavity 111 may be connected to each other, in this case, any one of the blocking members 310 may be a fan-shaped structure, on one hand, one end of the blocking member 310 may form a relatively close connection relationship with the inner wall of the air mixing cavity 111, and on the other hand, one ends of the blocking members 310 departing from the inner wall of the air mixing cavity 111 may be connected to each other, thereby preventing the air from flowing from the center of the air mixing cavity 111.

Furthermore, in the case that the middle post 320 is disposed in the gas mixing chamber 111, and the gas mixing chamber 111 and the middle post 320 are both circular structures, any blocking member 310 may be a fan-shaped structure, and one end of the blocking member 310 may be connected to the middle post 320, and the other end of the blocking member 310 may be connected to the inner wall of the gas mixing chamber 111, so as to ensure that the gas cannot flow through the gap between the blocking member 310 and the middle post 320 and the gap between the blocking member 310 and the inner wall of the gas mixing chamber 111.

As described above, each gas barrier layer includes the plurality of blocking members 310, and optionally, the plurality of blocking members 310 in each gas barrier layer are uniformly distributed, so that the relative positions of the plurality of shunts formed when the gas flows through any gas barrier layer are more uniform, and the flow rates of the shunts are substantially the same, thereby further improving the degree of uniformity of mixing of the gas after flowing through the gas mixing chamber 111.

Specifically, the number of the blocking members 310 of any gas blocking layer may be two, three, four, or more, optionally, while ensuring that the gas blocking layer has a better gas blocking effect, the processing difficulty of the gas blocking layer is reduced as much as possible, the gas blocking layer may be formed by four blocking members 310, the four blocking members 310 are uniformly arranged, an angle spanned by each blocking member 310 may be specifically determined according to an actual situation, specifically may be 60 °, and correspondingly, an angle corresponding to a spacing area between two adjacent blocking members 310 is 30 °. Of course, the number of the barriers 310 of the gas barrier layer and the angle spanned between two adjacent barriers 310 may be different under different actual requirements, and is not limited herein.

As described above, each blocking member 310 may be a sheet-shaped or block-shaped structure, and specifically, a first surface 311 and a second surface 312 of the blocking member 310, which are opposite to each other in the axial direction of the air mixing chamber 111, may be flat, and the first surface 311 and the second surface 312 may be parallel to each other. In another embodiment of the present application, optionally, the included angle between the first surface 311 and the axis of the air mixing chamber 111 is smaller than 90 °, i.e. the first surface 311 is obliquely arranged towards the position where the axis of the air mixing chamber 111 is located. In the case of adopting the above technical solution, the second surface 312 may be perpendicular to the axial direction of the air mixing cavity 111, and further, compared with the dimension in the axial direction of the first space near the inner wall of the air mixing cavity 111 in two adjacent blocking members 310 in the axial direction of the air mixing cavity 111, the dimension in the axial direction of the second space in the region where the two adjacent blocking members 310 are near the axis of the air mixing cavity 111 is smaller.

In this case, although the mass of the gas is relatively small, a certain centrifugal force is generated when the gas flows at a high speed in the gas mixing cavity 111, and along with the progress of the gas flowing process in the gas mixing cavity 111, the gas gradually draws close to the outer side of the gas mixing cavity 111, and through making the included angle between the first surface 311 and the axis of the gas mixing cavity 111 smaller than 90 °, the two adjacent barriers 310 can provide a certain squeezing effect to the gas, so as to promote the gas to flow to the position close to the axis of the gas mixing cavity 111, that is, from the outer side of the gas mixing cavity 111 to the inner side of the gas mixing cavity 111, which can further improve the effect of mixing the gas in the gas mixing cavity 111.

Similarly, the included angle between the second surface 312 and the axis of the gas mixing cavity 111 may be smaller than 90 °, and correspondingly, in this case, by making the first surface 311 perpendicular to the axis of the gas mixing cavity 111, it is also possible to make the dimension of the space near the inner wall of the gas mixing cavity 111 in the axial direction smaller than the dimension of the space near the axis of the gas mixing cavity 111 in the axial direction in the space sandwiched between two adjacent blocking pieces 310 in the axial direction, which may also exert a certain effect on the gas by means of the space, promote the gas to flow from the outer side of the gas mixing cavity 111 to the center of the gas mixing cavity 111, and promote the uniform mixing degree of the gas in the gas mixing cavity 111.

Specifically, the included angle between each of the first surface 311 and the second surface 312 and the axis of the air mixing cavity 111 may be 85 ° or 60 °. More specifically, the included angle between each of the first surface 311 and the second surface 312 and the axis of the gas mixing cavity 111 may be 80 °, in which case, while the first surface 311 and the second surface 312 can provide a better flow guiding effect, no gas flow dead angle is formed substantially, and the degree of uniformity of mixing of the gas in the gas mixing cavity 111 is further improved.

Of course, it should be noted that, by making the difference between the first included angle between one of the first surface 311 and the second surface 312 and the axis of the air mixing cavity 111 and 90 ° larger than the difference between the second included angle between the other one and the axis of the air mixing cavity 111 and 90 °, it can also be ensured that the size of the outer side of the space formed by the two blocking members 310 adjacent to each other in the axial direction of the air mixing cavity 111 is smaller than the size of the inner side, so as to promote the air to flow near the center of the air mixing cavity 111 in the space of the above shape.

As described above, the gas may be introduced into the gas mixing cavity 111 from the gas mixing member 110, specifically, the gas mixing member 110 is provided with a gas inlet through which the gas may be introduced into the gas mixing cavity 111, and an axial direction of the gas inlet may be parallel to an axial direction of the gas mixing cavity 111. In another embodiment of the present application, the axial direction of the gas inlet may be perpendicular to the axial direction of the gas mixing cavity 111, that is, the gas is sent into the gas mixing cavity 111 from one side of the gas mixing cavity 111, so that the gas has a tangential velocity when flowing in the gas mixing cavity 111, and further, the blocking member 310 may be prevented from generating a large obstruction to the flow of the gas, which affects the delivery rate of the gas.

Optionally, the sidewall of the gas mixing member 110 is provided with a plurality of gas inlets, and the plurality of gas inlets can be respectively used for conveying different types of source gases, so as to prevent the different source gases from reacting at the beginning of conveying and causing adverse effects on the process. The number of the air inlets can be determined according to actual requirements, for example, the number of the air inlets can be two, three or more. The plurality of air inlets are uniformly and alternately arranged around the axial direction of the air mixing chamber 111, so that adjacent air inlets do not substantially interfere with each other, and the assembly work of the pipeline connected with the air inlets is facilitated.

Further, all be connected with intake pipe 120 on a plurality of air inlets, the other end of intake pipe 120 can communicate with the air supply to make the gas in the air supply can be carried to mixing in the gas piece 110 through the air inlet through intake pipe 120. As described above, the axial direction of the air inlet may be parallel to the axial direction of the air mixing chamber 111, or may be perpendicular to the axial direction of the air mixing chamber 111, and correspondingly, the axial line of the air inlet pipe 120 may coincide with the axial line of the air inlet. Further, under the condition that gas mixing chamber 111 is circular structure, can make the axial of a plurality of intake pipes 120 all tangent with gas mixing chamber 111's circumference, under this condition, can further reduce the effect of blockking of the gaseous lateral wall that gas mixing chamber 111 lets in from the air inlet, make gaseous inner wall circumferential motion along gas mixing chamber 111, and move to the direction that is close to the branch gas passageway gradually, it is more to prevent that gaseous transport speed from declining, in order guaranteeing under the relatively higher condition of gaseous misce bene degree, can also guarantee that gaseous transport speed is relatively higher.

In another embodiment of the present application, the gas distributor 200 optionally includes a conical diverter tray 210 and a diverter ring 220. Wherein, the outer peripheral wall 211 of the conical splitter plate 210 and the side wall of the mounting through hole 521 cooperate to form a gas distribution channel. Specifically, when the gas distributor 200 includes the conical splitter 210, the side wall of the mounting through hole 521 provided in the cover plate 520 is also tapered as a whole, so that the side wall of the mounting through hole 521 can be fitted with the outer circumferential wall 211 of the conical splitter 210 to form a gas distribution passage with a tapered structure.

Meanwhile, one end of the gas distribution channel is communicated with the gas mixing cavity 111, and the other end is communicated with the process chamber 510 through the flow distribution ring 220. Specifically, the gas mixing cavity 111 and the shunting ring 220 may be connected to the gas distribution channel by welding or bonding, so as to ensure that the two opposite ends of the gas distribution channel can form a reliable sealing relationship with the gas mixing cavity 111 and the shunting ring 220, respectively. The end with the relatively small size in the gas distribution channel is communicated with the gas mixing cavity 111, and the end with the relatively large size is communicated with the process chamber 510 through the splitter ring 220, so that after the gas flows into the gas distribution channel from the gas mixing cavity 111, the gas can be diffused through the gas distribution channel with the conical structure, the dispersion degree of the gas is improved, and the gas is dispersed in advance before the gas enters the splitter ring 220.

In addition, the diverter ring 220 is disposed at the bottom of the conical diverter tray 210 to ensure that the gas distribution channels can communicate with the process chamber 510 through the diverter ring 220. The splitter ring 220 is provided with an air containing groove 223, air can be introduced into the air containing groove 223 from the air splitting channel, and a plurality of air splitting holes 224 which are uniformly distributed are axially arranged on the inner side wall 222 and the outer side wall 221 of the splitter ring 220. That is, the diverting ring 220 includes an inner sidewall 222 and an outer sidewall 221, and the outer sidewall 221 is disposed around the inner sidewall 222, so that the inner sidewall 222 and the outer sidewall 221 sandwich the air accommodating groove 223. The inner side wall 222 and the outer side wall 221 can be circular ring-shaped structural members, and the size of the distance between the outer side wall 221 and the inner side wall 222, the diameter of the inner side wall 222 and the diameter of the outer side wall 221, and the like can be determined according to actual conditions. In order to ensure that the gas in the gas containing groove 223 can be normally introduced into the process chamber 510, the inner sidewall 222 and the outer sidewall 221 are both provided with a plurality of gas distribution holes 224, and the plurality of gas distribution holes 224 are correspondingly and uniformly arranged along the circumferential direction, so that the gas can flow into the inner sidewall 222 from the gas distribution holes 224 on the inner sidewall 222, and flow out of the outer sidewall 221 from the gas distribution holes 224 on the outer sidewall 221, and the gas can be uniformly and completely introduced into the process chamber 510 as much as possible.

Of course, the gas supply member 400 may be further disposed between the process chamber 510 and the gas distribution member 200, the gas supply member 400 is provided with a plurality of uniformly distributed gas supply holes 410, and each gas supply hole 410 penetrates through the gas supply member 400 along the axial direction of the gas supply member 400, so that each gas supply hole 410 can communicate with two opposite sides of the gas supply member 400. The gas feeding member 400 is disposed at a side of the diverting ring 220 facing away from the gas mixing chamber 111 and is installed on the process chamber 510, so that a plurality of gas streams dispersed from the diverting ring 220 can be respectively introduced into the process chamber 510 through the corresponding gas feeding holes 410 of the gas feeding member 400.

As described above, the size of the inner sidewall 222 and the outer sidewall 221, such as the diameter, and the distance therebetween, can be determined according to the actual situation, and correspondingly, the number and the diameter of the gas distribution holes 224 disposed on the inner sidewall 222 can also be determined according to the actual situation, such as the diameter of the inner sidewall 222, and the number of the gas distribution holes 224 disposed on the outer sidewall 221 can also be determined. Alternatively, the number of the gas distribution holes 224 on the inner sidewall 222 is in direct proportion to the diameter of the inner sidewall 222, that is, the larger the diameter of the inner sidewall 222, the larger the number of the gas distribution holes 224 disposed on the inner sidewall 222. Similarly, the number of the gas distribution holes 224 on the outer sidewall 221 is proportional to the diameter of the outer sidewall 221.

In addition, as described above, the gas flowing out from the gas containing groove 223 through the gas distribution holes 224 on the inner sidewall 222 flows to the inner side of the inner sidewall 222, and the gas flowing out from the gas containing groove 223 through the gas distribution holes 224 on the outer sidewall 221 flows to the outer side of the outer sidewall 221, and in order to ensure that the amounts of the gas in the regions corresponding to the upper surface of the process chamber 510 are substantially the same, the number of the gas distribution holes 224 provided on the inner sidewall 222 and the outer sidewall 221 may be determined correspondingly according to the ratio between the area of the region inside the inner sidewall 222 and the area of the region outside the outer sidewall 221 in the process of arranging the gas distribution holes 224 on the inner sidewall 222 and the outer sidewall 221, so that the values of the gas supply areas covered by the gas distribution holes 224 are substantially the same as much as possible, and the gas intake rate in the regions on the process chamber 510 is improved.

Alternatively, the ratio of the number of the gas distribution holes 224 on the outer sidewall 221 to the number of the gas distribution holes 224 on the inner sidewall 222 is a preset value, and specifically, the preset value is related to the required corresponding gas supply areas of the inner sidewall 222 and the outer sidewall 221. More specifically, a second ratio of the sum of the cross-sectional areas of the gas distribution holes 224 on the outer sidewall 221 to the sum of the cross-sectional areas of the gas distribution holes 224 on the inner sidewall 222 may be correspondingly determined according to a first ratio between the area of the process chamber 510 corresponding to the region outside the outer sidewall 221 and the area of the process chamber 510 corresponding to the region inside the inner sidewall 222, where the second ratio is the predetermined value.

Specifically, the gas distribution holes 224 may be through holes with rectangular or circular cross sections, or the cross section of the gas distribution holes 224 may be triangular, and the cross section of the gas distribution holes 224 may be circular in order to reduce the difficulty in processing the gas distribution holes 224. More specifically, the gas distribution holes 224 may have a cylindrical structure to further reduce the difficulty of processing the gas distribution holes 224.

In another embodiment of the present application, the gas distribution hole 224 may have a variable cross-sectional structure, and specifically, the cross-sectional area of the gas distribution hole 224 may be gradually reduced along the flow direction of the gas in the gas distribution hole 224. Specifically, for the gas distribution holes 224 on the outer sidewall 221 and the inner sidewall 222, the sectional area of the gas distribution holes 224 on the outer sidewall 221 may be gradually reduced from the inside to the outside along the radial direction of the flow distribution ring 220, and the sectional area of the gas distribution holes 224 on the inner sidewall 222 may be gradually reduced from the outside to the inside along the radial direction of the flow distribution ring 220. In summary, by gradually reducing the cross-sectional area of the corresponding gas distribution hole 224, the speed of the gas after flowing through the gas distribution hole 224 can be increased, and further the flow rate of the gas after flowing through the diverting ring 220 can be increased, so that the gas can be diffused more widely, and the coverage area of the diverting ring 220 can be increased.

Based on the gas delivery device provided in any of the above embodiments, as shown in fig. 6, an embodiment of the present application further provides a semiconductor processing apparatus, which includes a process chamber 510 and the gas delivery device provided in any of the above embodiments, wherein the gas delivery device is installed on a cover plate 520 of the process chamber 510, so as to deliver the process gas into the process chamber 510 through the gas delivery device, and ensure that the process gas delivered into the process chamber is mixed uniformly to a relatively high degree. Of course, the semiconductor processing equipment may also be provided with components such as the heater 530, and will not be described in detail herein in view of brevity.

In the embodiments of the present application, the difference between the embodiments is described in detail, and different optimization features between the embodiments can be combined to form a better embodiment as long as the differences are not contradictory, and further description is omitted here in view of brevity of the text.

The above description is only an example of the present application and is not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.

Claims

1. A gas delivery device in semiconductor process equipment is used for delivering process gas into a process chamber of the semiconductor process equipment, and is characterized in that the gas delivery device comprises a gas mixing component and a gas distributing component, the gas distributing component is arranged in an installation through hole on a cover plate of the process chamber, the gas distributing component and the installation through hole are matched to form a gas distributing channel, the gas mixing component is arranged on the cover plate, a gas mixing cavity is arranged in the gas mixing channel, and the gas distributing channel is communicated with the gas mixing cavity and the process chamber;

2. The gas delivery device according to claim 1, wherein for any two adjacent sets of the gas blocking layers, a projection of any one of the blocking members in the axial direction of one of the gas blocking layers covers a spacing region between corresponding adjacent two of the blocking members in the other gas blocking layer.

3. The gas delivery device according to claim 1, wherein a middle post is further arranged in the gas mixing cavity, the axis of the middle post is coincident with the axis of the gas mixing cavity, and any blocking member is connected between the middle post and the inner wall of the gas mixing cavity.

4. The gas delivery device according to claim 1, wherein the gas mixing chamber is a cylindrical structure, any of the blocking members is a fan-shaped structural member, and a plurality of the blocking members in any of the gas blocking layers are uniformly distributed.

5. The gas delivery device according to claim 1, wherein the blocking member has a first surface and a second surface disposed opposite to each other along the axial direction, and the first surface forms an angle of less than 90 ° with the axis of the gas mixing chamber;

and/or the included angle between the second surface and the axis of the gas mixing cavity is smaller than 90 degrees.

6. The gas conveying device according to claim 1, wherein a plurality of gas inlets are formed in the side wall of the gas mixing member, and the plurality of gas inlets are uniformly and alternately arranged around the axial direction of the gas mixing cavity;

and the plurality of air inlets are connected with air inlet pipes, and the axial directions of the plurality of air inlet pipes are tangent to the circumferential direction of the air mixing cavity.

7. The gas delivery device according to claim 1, wherein the gas distribution member comprises a conical distribution plate and a distribution ring, the peripheral wall of the conical distribution plate and the side wall of the mounting through hole are matched to form the gas distribution channel, one end of the gas distribution channel is communicated with the gas mixing cavity, and the other end of the gas distribution channel is communicated with the process chamber through the distribution ring;

the splitter ring sets up the bottom of toper flow distribution plate wherein is provided with the gas groove, all be provided with a plurality of evenly distributed's branch gas pocket along circumference on splitter ring's the inside wall and the lateral wall.

8. The gas delivery device according to claim 7, wherein the ratio of the number of gas distribution holes on the outer sidewall to the number of gas distribution holes on the inner sidewall is a predetermined value.

9. The gas delivery device according to claim 7, wherein the cross-sectional area of the gas distribution holes on the outer sidewall decreases from inside to outside in the radial direction of the diverter ring, and the cross-sectional area of the gas distribution holes on the inner sidewall decreases from outside to inside in the radial direction.

10. A semiconductor processing apparatus comprising a process chamber and a gas delivery device according to any one of claims 1 to 9.