CN113437991B - Radio frequency power amplifying circuit, chip and communication equipment - Google Patents

Radio frequency power amplifying circuit, chip and communication equipment Download PDF

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Publication number
CN113437991B
CN113437991B CN202110723101.1A CN202110723101A CN113437991B CN 113437991 B CN113437991 B CN 113437991B CN 202110723101 A CN202110723101 A CN 202110723101A CN 113437991 B CN113437991 B CN 113437991B
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circuit
radio frequency
type device
power
signal
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CN113437991A (en
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朱波
孙亚楠
梁聪
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Spreadtrum Communications Shanghai Co Ltd
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Spreadtrum Communications Shanghai Co Ltd
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Priority to PCT/CN2022/081121 priority patent/WO2023273417A1/en
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3211—Modifications of amplifiers to reduce non-linear distortion in differential amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

Abstract

The embodiment of the application provides a radio frequency power amplifier circuit, chip and communication equipment, and radio frequency power amplifier circuit includes: the power amplifier comprises a power control circuit, a power level circuit, a driving level circuit and an output impedance matching circuit, wherein the driving level circuit is respectively connected with the power control circuit and the power level circuit, and the power level circuit is also connected with the output impedance matching circuit. The radio frequency power amplifying circuit, the chip and the communication device provided by the embodiment can improve the application range of the radio frequency power amplifying circuit.

Description

Radio frequency power amplifying circuit, chip and communication equipment
Technical Field
The embodiment of the application relates to the technical field of power amplifiers, in particular to a radio frequency power amplifying circuit, a chip and communication equipment.
Background
A radio frequency power amplifier and an antenna may be included in a communication device (e.g., a handset). The radio frequency power amplifier is used for performing power amplification on a radio frequency input signal to obtain a radio frequency output signal, and transmitting the radio frequency output signal to other equipment (such as a base station) communicating with the communication equipment through an antenna.
In the related art, a radio frequency power amplifier includes: the driver stage circuit is used for enabling the radio frequency power amplifier to have better linearity, so that the radio frequency power amplifier can be applied to a communication system supporting linear power amplification (such as a Long Term Evolution (LTE) communication system), and the application range of the radio frequency power amplifier is narrow.
Disclosure of Invention
The embodiment of the application provides a radio frequency power amplifying circuit, a chip and communication equipment, which are used for improving the application range of the radio frequency power amplifying circuit.
In a first aspect, an embodiment of the present application provides a radio frequency power amplifying circuit, including: the power amplifier comprises a power control circuit, a power level circuit, a driving level circuit and an output impedance matching circuit, wherein the driving level circuit is respectively connected with the power control circuit and the power level circuit, and the power level circuit is also connected with the output impedance matching circuit;
the power control circuit is used for determining to provide power for the driving stage circuit according to the radio frequency intermediate signal and the output power control signal Vramp or according to the output power control signal Vramp based on the received working mode control signal;
the driving stage circuit is used for receiving the radio frequency input signal, amplifying the radio frequency input signal according to a power supply, generating a radio frequency intermediate signal and respectively providing the radio frequency intermediate signal for the power control circuit and the power stage circuit; the radio frequency intermediate signal is used for providing bias voltage for the power stage circuit;
the power level circuit is used for amplifying the radio frequency intermediate signal according to the bias voltage to obtain a radio frequency amplified signal and providing the radio frequency amplified signal to the output impedance matching circuit;
and the output impedance matching circuit is used for performing impedance transformation matching on the radio frequency amplified signal to obtain a radio frequency output signal and providing the radio frequency output signal for the antenna.
In one possible design, a power control circuit includes: the low dropout linear regulator, the filter circuit and the first N-type device;
the first end of the low dropout linear regulator is connected with a working mode control signal, the second end of the low dropout linear regulator is connected with an output power control signal Vramp, the third end of the low dropout linear regulator is connected with the first input end of the driving stage circuit, and the fourth end of the low dropout linear regulator is connected with the second end of the first N-type device through a filter circuit;
the first end of the first N-type device is connected with the output end of the driving stage circuit;
the low dropout linear regulator provides power for the driving stage circuit, and the output end of the driving stage circuit provides a radio frequency intermediate signal.
In one possible design, the driver stage circuit includes: the first capacitor, the second capacitor, the first P type device, the second N type device and the feedback circuit;
the first capacitor is respectively connected with the radio frequency input signal and the first end of the first P type device, the first end of the first P type device is also connected with a first bias voltage, the second end of the first P type device is connected with the second end of the second N type device, and the third end of the first P type device is connected with the power control circuit;
the second capacitor is respectively connected with the radio frequency input signal and the first end of the second N-type device, and the third end of the second N-type device is grounded;
the input end of the feedback circuit is connected between the second end of the second N-type device and the second end of the first P-type device, and the output end of the feedback circuit is connected between the second capacitor and the first end of the second N-type device;
outputting a radio frequency intermediate signal between the second terminal of the first P-type device and the second terminal of the second N-type device.
In one possible design, a power stage circuit includes: a first inductor, a fourth N-type device; wherein, the first and the second end of the pipe are connected with each other,
the first inductor is respectively connected with the first voltage and the second end of the fourth N-type device, and the first end of the fourth N-type device is connected with the driving stage circuit;
the junction of the first inductor and the second terminal of the fourth N-type device outputs a radio frequency amplified signal.
In one possible design, the power control circuit further includes: a third N-type device;
the first end of the third N-type device is connected with the second bias voltage, the second end of the third N-type device is connected with the filter circuit, and the third end of the third N-type device is connected with the second end of the first N-type device.
In one possible design, the power stage circuit further includes: a fifth N type device and a sixth N type device;
a first terminal of the fifth N-type device is connected with the second bias voltage, a second terminal of the fifth N-type device is connected with a third terminal of the sixth N-type device, and a third terminal of the fifth N-type device is connected with a second terminal of the fourth N-type device;
the first end of the sixth N-type device is connected with the third bias voltage, and the second end of the sixth N-type device is connected with the first inductor;
an input terminal of the output impedance matching circuit is connected to a connection point of the first inductor and the second terminal of the sixth N-type device.
In one possible design, the radio frequency power amplifying circuit further includes: an input matching circuit;
the input end of the input matching circuit receives the modulation signal, and the output end of the input matching circuit is connected with the driving stage circuit.
In one possible design, the radio frequency power amplifying circuit further includes: an interstage impedance matching circuit;
the interstage impedance matching circuit is connected to a connection point of the power stage circuit and the driver stage circuit.
In one possible design, the radio frequency power amplifying circuit further includes: a pre-amplifier circuit;
the input end of the preceding stage amplifying circuit receives the modulation signal, and the output end of the preceding stage amplifying circuit is connected with the driving stage circuit.
In one possible design, the rf power amplifying circuit further includes: a conversion circuit;
the number of the power control circuits, the number of the power level circuits and the number of the driving level circuits are all 2, and one driving level circuit is respectively connected with one power control circuit and one power level circuit;
the conversion circuit is respectively connected with the modulation signal and the 2 driving stage circuits;
and the conversion circuit is used for converting the modulation signal into two paths of radio frequency input signals with the phase difference value equal to a preset value and providing one path of radio frequency input signal for one driving stage circuit.
In a second aspect, an embodiment of the present application provides a chip, where the chip includes the radio frequency amplification circuit of any one of the first aspects.
In a third aspect, an embodiment of the present application provides a communication device, where the communication device includes the chip in the second aspect.
The embodiment of the application provides a radio frequency power amplifier circuit, chip and communication equipment, and this circuit includes: the power amplifier comprises a power control circuit, a power level circuit, a driving level circuit and an output impedance matching circuit, wherein the driving level circuit is respectively connected with the power control circuit and the power level circuit, and the power level circuit is also connected with the output impedance matching circuit; the power control circuit is used for determining to provide power for the driving stage circuit according to the radio frequency intermediate signal and the output power control signal Vramp or according to the output power control signal Vramp based on the received working mode control signal; the driving stage circuit is used for receiving the radio frequency input signal, amplifying the radio frequency input signal according to a power supply, generating a radio frequency intermediate signal and respectively providing the radio frequency intermediate signal for the power control circuit and the power stage circuit; the radio frequency intermediate signal is used for providing bias voltage for the power stage circuit; the power level circuit is used for amplifying the radio frequency intermediate signal according to the bias voltage to obtain a radio frequency amplified signal and providing the radio frequency amplified signal to the output impedance matching circuit; and the output impedance matching circuit is used for performing impedance transformation matching on the radio frequency amplified signal to obtain a radio frequency output signal and providing the radio frequency output signal for the antenna. In the above circuit, the power control circuit determines to generate a power supply according to the radio frequency intermediate signal and the output power control signal or according to the output power control signal based on the received operating mode control signal, and provides the power supply to the driver stage circuit, so that the power control circuit 11 can operate in different operating modes, and thus the radio frequency power amplification circuit can be applied to different communication systems, and the application range of the radio frequency power amplification circuit is expanded.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and those skilled in the art can also obtain other drawings according to the drawings without inventive exercise.
Fig. 1 is a first schematic structural diagram of an rf power amplifying circuit according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a radio frequency power amplifying circuit according to an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram three of a radio frequency power amplifying circuit according to an embodiment of the present application;
fig. 4 is a schematic structural diagram of a radio frequency power amplifying circuit according to an embodiment of the present disclosure;
fig. 5 is a schematic structural diagram of a radio frequency power amplifying circuit according to an embodiment of the present disclosure;
fig. 6 is a sixth schematic structural diagram of the rf power amplifying circuit according to the embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The terms "first," "second," "third," "fourth," and the like in the description and in the claims of the present application and in the drawings described above, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are, for example, capable of operation in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
In the related art, a radio frequency power amplifier includes: a driver stage circuit and a power stage circuit. The driving stage circuit is used for enabling the radio frequency power amplifier to have better linearity, so that the radio frequency power amplifier can be applied to a communication system supporting linear power amplification, and the application range of the radio frequency power amplifier is narrow. Wherein, linear power amplified communication system includes: an LTE communication system, a Time Division-Synchronous Code Division Multiple Access (TD-SCDMA) communication system, and an Enhanced Data Rate for GSM Evolution (EDGE) communication system.
In the present application, in order to increase the application range of the rf power amplifier, the rf power amplifier may be applied not only to the communication System supporting the linear power amplification but also to a communication System supporting the nonlinear power amplification (for example, a Global System for Mobile Communications (GSM)), and the inventors think that a power control circuit is added to the rf power amplifier, so that the rf power amplifier may be applied to both the communication System supporting the linear power amplification and the communication System supporting the nonlinear power amplification, thereby increasing the application range of the rf power amplifier.
The technical solution of the present application will be described in detail below with specific examples. These several specific embodiments may be combined with each other below, and details of the same or similar concepts or processes may not be repeated in some embodiments.
Fig. 1 is a first schematic structural diagram of a power amplification circuit according to an embodiment of the present disclosure. As shown in fig. 1, the circuit includes: a power control circuit 11, a power stage circuit 12, a driver stage circuit 13, and an output impedance matching circuit 14.
The driving stage circuit 13 is respectively connected with the power control circuit 11 and the power stage circuit 12, and the power stage circuit 12 is also connected with the output impedance matching circuit 14;
the power control circuit 11 is configured to determine, based on the received operating mode control signal S1, to provide power to the driver stage circuit 13 according to the radio frequency intermediate signal S3 and the output power control signal Vramp, or according to the output power control signal Vramp;
the driving stage circuit 13 is configured to receive the radio frequency input signal RFin, amplify the radio frequency input signal RFin according to a power supply, generate a radio frequency intermediate signal S3, and provide the radio frequency intermediate signal S3 to the power control circuit 11 and the power stage circuit 12, respectively; the radio frequency intermediate signal S3 is used to provide a bias voltage to the power stage circuit 12;
the power stage circuit 12 is configured to amplify the radio frequency intermediate signal S3 according to the bias voltage to obtain a radio frequency amplified signal, and provide the radio frequency amplified signal to the output impedance matching circuit 14;
and an output impedance matching circuit 14, configured to perform impedance transformation matching on the radio frequency amplified signal to obtain a radio frequency output signal RFout, and provide the radio frequency output signal RFout to the antenna.
The output power control signal Vramp is used to control the output power of the rf amplified signal, i.e. the gain for amplifying the power of the rf input signal RFin.
For example, in the embodiment of fig. 1, the gain is equal to the sum of the gains of the power control circuit 11 and the power stage circuit 12.
Specifically, the power control circuit 11 determines whether the rf power amplifier circuit needs to operate in a linear operating mode or in a saturation operating mode according to the operating mode control signal S1; if the linear working mode is required to be operated, generating a power supply VDD1 according to the output power control signal Vramp (or not according to the output power control signal Vramp); and if the power supply needs to work in a saturation working mode, generating a power supply VDD1 according to the radio frequency intermediate signal S3 and the output power control signal Vramp.
It should be noted that, when the radio frequency power amplifying circuit operates in the linear operating mode, the radio frequency power amplifying circuit can be applied to a communication system supporting the nonlinear power amplification; when the radio frequency power amplifying circuit works in a saturation working mode, the radio frequency power amplifying circuit can be applied to a communication system supporting nonlinear power amplification.
The rf intermediate signal S3 includes a dc component and an ac component. The dc component of the rf intermediate signal S3 and the ac low-frequency component of the ac component are used to provide a bias voltage to the power stage circuit 12 and a bias voltage to the power control circuit 11.
When the rf intermediate signal S3 provides the bias voltage for the power stage circuit 12, the power stage circuit 12 has an amplifying function, so that the rf intermediate signal S3 can be amplified to obtain an rf amplified signal.
In the radio frequency power amplifying circuit provided in the embodiment of fig. 1, the power control circuit 11 determines to generate the power supply VDD1 according to the radio frequency intermediate signal S3 and the output power control signal Vramp or according to the output power control signal Vramp based on the received operating mode control signal S1, and provides the power supply VDD1 to the driver circuit 13, so that the power control circuit 11 can operate in different operating modes, and thus the radio frequency power amplifying circuit can be applied to different communication systems, and the application range of the radio frequency power amplifying circuit is increased.
That is, the radio frequency power amplifying circuit shown in fig. 1 considers the design of both the saturation power amplifier and the linear power amplifier, thereby increasing the application range of the radio frequency power amplifying circuit. Saturated power amplifiers are commonly used in GSM. The linear power amplifier is generally applied to TD-SCDMA, EDGE and LTE communication systems.
Based on the above embodiments, the following describes the rf power amplifying circuit provided in the present application in further detail with reference to the embodiment of fig. 2.
Fig. 2 is a schematic structural diagram of a radio frequency power amplifying circuit according to an embodiment of the present disclosure. As shown in fig. 2, the power control circuit 11 includes: a low dropout regulator (LDO), a filter circuit 111, and a first N-type device MN2.
The first end of low dropout linear regulator LDO connects mode control signal S1, and output power control signal Vramp is connected to the second end of low dropout linear regulator LDO, and the first input of drive stage circuit 13 is connected to the third end of low dropout linear regulator LDO, and the second end that first N type device MN2 is connected through filter circuit 111 to the fourth end of low dropout linear regulator LDO.
The first terminal of the first N-type device MN2 is connected to the output terminal of the driving stage circuit 13.
The third terminal of the LDO provides the power supply VDD1 to the first input terminal of the driving stage circuit 13.
The output of the driver stage circuit 13 provides the radio frequency intermediate signal S3 to the power stage circuit 12 and the power control stage circuit 11, respectively.
The filter circuit 111 is an RC filter circuit formed by a resistor R1 and a capacitor C3. The connection relationship between the resistor R1 and the capacitor C3 in the power control circuit 11 is shown in fig. 2, and will not be described in detail here.
In one possible design, the driver stage circuit 13 includes: the first capacitor C1, the second capacitor C2, the first P-type device MP1, the second N-type device MN1, and the feedback circuit 131.
The first capacitor C1 is connected to the radio frequency input signal RFin and the first end of the first P-type device MP1, the first end of the first P-type device MP1 is further connected to the first bias voltage Vb1, the second end of the first P-type device MP1 is connected to the second end of the second N-type device MN1, and the third end of the first P-type device MP1 is connected to the power control circuit 11. The power control circuit 11 provides the power supply VDD1 to the driving stage circuit 13 through the third terminal of the first P-type device MP 1.
The second capacitor C2 is respectively connected with the radio frequency input signal RFin and the first end of the second N-type device MN1, and the third end of the second N-type device MN1 is grounded; the input terminal of the feedback circuit 131 is connected between the second terminal of the second N-type device MN1 and the second terminal of the first P-type device MP1, and the output terminal of the feedback circuit 131 is connected between the second capacitor C2 and the first terminal of the first N-type device MN2. The radio frequency intermediate signal S3 is output between the second terminal of the first P-type device MP1 and the second terminal of the second N-type device MN 1.
Optionally, the first capacitor C1 and the second capacitor C2 may have the same capacitance value, or may have different capacitance values.
In one possible design, power stage circuit 12 includes: first inductance L1, fourth N type device MN3.
The first inductor L1 is respectively connected with a first power supply VDD2 and a second end of the fourth N-type device MN 3; the first terminal of the fourth N-type device MN3 is connected to the driving stage circuit 13.
The junction point of the first inductor L1 and the second terminal of the fourth N-type device MN3 outputs the rf amplified signal RFin.
The first inductor L1 is a Choke inductor. The first power supply VDD2 is a dc voltage.
The operation of the rf power amplifier circuit shown in fig. 2 in the linear operation mode is described as follows:
the first capacitor C1 performs filtering processing on the radio frequency input signal RFin to obtain an alternating current signal (a first alternating current signal) in the radio frequency input signal RFin;
the second capacitor C2 performs filtering processing on the radio frequency input signal RFin to obtain an alternating current signal (a second alternating current signal) in the radio frequency input signal RFin;
the low dropout linear regulator LDO provides a power supply VDD1 and provides the power supply VDD1 for the first P-type device MP 1; in the linear working mode, the low dropout regulator LDO provides the power supply VDD1 to the first P-type device MP1 only according to the output power control signal Vramp, or directly generates the power supply VDD1 (i.e. not according to the output power control signal Vramp);
the first P-type device MP1 outputs a first output signal according to the power supply VDD1, the first bias voltage Vb1 and the first ac signal processing, and provides the first output signal to the node P;
the second N-type device MN1 outputs a second output signal according to the feedback signal and the second ac signal provided by the feedback circuit 131, and provides the second output signal to the node P;
at node P, the first output signal and the second output signal form a radio frequency intermediate signal S3 and provide the radio frequency intermediate signal S3 to the feedback circuit 131, the power stage circuit 12, and the power control circuit 11, respectively; the feedback circuit 131 is configured to filter an ac high-frequency component in the rf intermediate signal and output a feedback signal (including a dc component and an ac low-frequency component in the rf intermediate signal);
after receiving the radio frequency intermediate signal S3, the first N-type device MN2 in the power control circuit 11 converts a direct current component and an alternating current component in the radio frequency intermediate signal S3 to obtain a current signal, and provides an overcurrent signal to the filter circuit 111;
the filter circuit 111 filters an alternating current high-frequency component in the current signal, and provides the current signal with the alternating current high-frequency component filtered to the low dropout regulator LDO;
after the fourth N-type device MN3 in the power stage circuit 12 receives the radio frequency intermediate signal S3, the dc component and the ac low-frequency component of the radio frequency intermediate signal S3 provide a dynamically changing bias voltage for the fourth N-type device MN3, so that the fourth N-type device MN3 is biased in class AB and has gain expansion, and the ac high-frequency component of the radio frequency intermediate signal S3 is used as an ac input signal of the fourth N-type device MN 3; an rf amplified signal is generated at the connection point Q and provided to the output impedance matching circuit 14.
In the above working process of the radio frequency power amplifying circuit, along with the change of the input power of the radio frequency input signal RFin, the dc component and the ac low-frequency component in the radio frequency intermediate signal S3 also change, the dc component and the ac low-frequency component of the radio frequency intermediate signal S3 adjust the bias state and the gain of the second N-type device MN1 through the feedback circuit 131, and at the same time, adjust the bias state and the gain of the first N-type device MN2 and the fourth N-type device MN3, compensate the nonlinear distortion of the radio frequency power amplifying circuit, and improve the linearity of the radio frequency power amplifying circuit, so that the radio frequency power amplifying circuit has the self-adaptive compensation capability. When the radio frequency power amplification circuit with the self-adaptive compensation capability is not close to a saturation state, the bias voltages of the second N-type device MN1 and the fourth N-type device MN3 are gradually reduced, and the gain expansion phenomenon is compensated. When the radio frequency power amplification circuit with the self-adaptive compensation capability is close to a saturation state, the bias voltages of the second N-type device MN1 and the fourth N-type device MN3 are gradually increased, and the gain compression phenomenon is delayed.
Since the driving stage circuit 13 has the adaptive compensation capability, the output of the driving stage circuit 13 can be directly connected to the first end of the fourth N-type device MN3 in the power stage circuit 12, and a dc blocking capacitor is not required to be added between the driving stage circuit 13 and the power stage circuit 12, and a bias circuit for providing linear compensation is not required to be additionally added, thereby simplifying the design of the rf power amplifying circuit.
The difference between the saturated operation mode and the linear operation mode of the rf power amplifier circuit shown in fig. 2 is that: the LDO generates a power supply VDD1 according to the output power control signal Vramp and a current signal after the alternating-current high-frequency component is filtered, and provides the power supply VDD1 for the first P-type device MP 1; the current signal after the ac high-frequency component is filtered is obtained by filtering the received current signal by the filter circuit 111. The current signal after the ac high-frequency component is filtered is obtained according to the radio frequency intermediate signal S3, which is not described herein again.
In the rf power amplifier circuit shown in fig. 2, the power control circuit 11 provides the power supply VDD1 to the driving stage circuit 13, so as to avoid the need of an additional circuit for providing the driving voltage to the driving stage circuit 13, and simplify the design of the driving stage circuit 13. Moreover, the power control circuit 11 includes the low dropout regulator LDO, the filter circuit 111, and the first N-type device MN2, so that the radio frequency power amplifier circuit can be applied to different communication systems, the application range of the radio frequency power amplifier circuit is increased, the structure of the radio frequency power amplifier circuit is simplified, and the cost of the radio frequency power amplifier circuit is reduced.
Fig. 3 is a schematic structural diagram of a radio frequency power amplifying circuit according to an embodiment of the present application. On the basis of fig. 2, as shown in fig. 3, the rf power amplifying circuit further includes: input to the matching circuit 15.
The input end of the input matching circuit 15 receives the radio frequency input signal RFin, and the output end of the input matching circuit 15 is connected to the driving stage circuit 13.
The input matching circuit 15 is configured to perform impedance transformation matching on the radio frequency input signal RFin and provide the radio frequency input signal RFin after impedance transformation matching to the driver stage circuit.
In one possible design, the radio frequency power amplifying circuit further includes: an interstage impedance matching circuit 16.
The interstage impedance matching circuit 16 is connected to a connection point of the power stage circuit 12 and the driver stage circuit 13.
The interstage impedance matching circuit 16 is configured to perform impedance transformation matching on the radio frequency intermediate signal S3, and provide the impedance transformation-matched radio frequency intermediate signal S3 to the power stage circuit 12.
The rf power amplifying circuit shown in the embodiment of fig. 3 includes: the input matching circuit 15, the interstage impedance matching circuit 16 and the output impedance matching circuit 14, so that impedance transformation matching is carried out on the radio frequency input signal RFin, the radio frequency intermediate signal S3 and the radio frequency amplification signal, and the performance of the radio frequency power amplification circuit is optimized.
On the basis of any of the above embodiments, the radio frequency power amplifying circuit provided in the embodiment of the present application is described below with reference to fig. 4.
Fig. 4 is a schematic structural diagram of a radio frequency power amplifying circuit according to an embodiment of the present application. As shown in fig. 4, the power stage circuit 12 further includes: a fifth N-type device MN5 and a sixth N-type device MN6.
A first end of the fifth N-type device MN5 is connected to the second bias voltage Vb2, a second end of the fifth N-type device MN5 is connected to a third end of the sixth N-type device MN6, and a third end of the fifth N-type device MN5 is connected to a second end of the fourth N-type device;
a first end of a sixth N-type device MN6 is connected with a third bias voltage Vb3, and a second end of the sixth N-type device MN6 is connected with a first inductor L1;
an input terminal of the output impedance matching circuit 14 is connected to a connection point of the first inductor L1 and the second terminal of the sixth N-type device MN6.
The first bias voltage Vb1, the second bias voltage Vb2, and the third bias voltage Vb3 are different.
In one possible design, the power control circuit 11 further includes: third N-type device MN4.
The first end of the third N-type device MN4 is connected to the second bias voltage Vb2, the second end of the third N-type device MN4 is connected to the filter circuit, and the third end of the third N-type device MN4 is connected to the second end of the first N-type device MN2.
In the rf power amplifying circuit shown in fig. 4, the power stage circuit 12 has a cascode structure, which is helpful for improving a withstand voltage of the rf power amplifying circuit, so that the first power supply VDD2 in the power stage circuit 12 can be improved, and further, the output power of the rf output signal is improved, so that the rf power amplifying circuit has the advantage of high power output. The newly added N-type devices (including the fifth N-type device MN5 and the sixth N-type device MN 6) reduce the miller effect of the fourth N-type device MN3, and improve the output impedance of the fourth N-type device MN3, thereby improving the isolation from the output to the input of the power stage circuit 12, and further improving the stability of the power stage circuit 12.
On the basis of any of the above embodiments, the radio frequency power amplifying circuit provided by the embodiment of the present application is described below with reference to fig. 5.
Fig. 5 is a schematic structural diagram five of the rf power amplifying circuit according to the embodiment of the present application. As shown in fig. 5, the rf power amplifying circuit further includes: the pre-amplifier circuit 17.
On the basis of the embodiment of fig. 2, the input terminal of the pre-amplifier circuit 17 receives the radio frequency input signal RFin, and the output terminal of the pre-amplifier circuit 17 is connected to the driver circuit 13.
The pre-stage amplifier circuit 17 is configured to perform gain boosting processing on the radio frequency input signal RFin to obtain a gain-boosted radio frequency input signal RFin, and provide the gain-boosted radio frequency input signal RFin to the driver stage circuit 13.
On the basis of fig. 3 and 4, the input end of the pre-amplifier circuit 17 receives the radio frequency input signal RFin, and the output end of the pre-amplifier circuit 17 is connected to the input matching circuit 15.
The pre-amplifier circuit 17 is configured to perform gain boost processing on the radio frequency input signal RFin to obtain a gain-boosted radio frequency input signal RFin, and provide the gain-boosted radio frequency input signal RFin to the input matching circuit 15.
Alternatively, the number of the pre-stage amplification circuits 17 may be plural. The plurality of pre-stage amplification circuits 17 are connected in series in sequence.
Fig. 5 is an exemplary illustration based on fig. 2.
In the embodiment of fig. 5, at least one pre-stage amplifier circuit 17 is added before the driving stage circuit 13, so that the gain of the whole rf power amplifier circuit can be increased, and the output power of the rf output signal can be increased.
On the basis of any of the above embodiments, the radio frequency power amplifying circuit provided by the embodiment of the present application is described below with reference to fig. 6.
Fig. 6 is a sixth schematic structural diagram of the rf power amplifying circuit according to the embodiment of the present application. As shown in fig. 6, the rf power amplifying circuit further includes: a conversion circuit 18; the number of the power control circuits 11, the power stage circuits 12, and the driving stage circuits 13 is 2.
One driving stage circuit 13 is connected to one power control circuit 11 and one power stage circuit 12, respectively.
On the basis of fig. 2, the input terminal of the conversion circuit 18 is connected to the radio frequency input signal RFin, and the output terminal of the conversion circuit 18 is connected to the 2 driving stage circuits 13. The conversion circuit 18 is configured to convert the radio frequency input signal RFin into two radio frequency input signals (including a radio frequency input signal RFin1 and a radio frequency input signal RFin 2) with a phase difference equal to a preset value, and provide one radio frequency input signal to a driving stage circuit 13. The preset value may be 180 degrees. The radio frequency input signal RFin1 is connected to the driver stage circuit 13, the power control circuit 11, and the power stage circuit 12 in this order, and then an output signal RFout1 is generated. The radio frequency input signal RFin2 passes through the driver stage circuit 13, the power control circuit 11, and the power stage circuit 12 in sequence, and then generates an output signal RFout2. The process of generating the rf output signal RFout1 from the rf input signal RFin1 is similar to the operation of the rf power amplifier circuit shown in the embodiment of fig. 2, and is not repeated herein.
On the basis of fig. 3, the input terminal of the conversion circuit 18 is connected to the output terminal of the input matching circuit 15, and the output terminal of the conversion circuit 18 is connected to the 2 driver stage circuits 13.
Alternatively, on the basis of fig. 3, the input matching circuit 15 may have 2. When the number of the input matching circuits 15 is 2, the input end of the conversion circuit 18 is connected with the radio frequency input signal RFin, the output end of the conversion circuit 18 is respectively connected with the 2 input matching circuits 15, and each input matching circuit 15 is connected with one driving stage circuit 13. The switching circuit 18 provides the radio frequency input signal RFin1 to one of the input matching circuits 15 and the radio frequency input signal RFin2 to the other input matching circuit 15.
When the rf power amplifier circuit includes the pre-amplifier circuit 17, the input matching circuit 15, and the converting circuit 18, the number of the input matching circuits 15 may be 1 or 2.
When the input matching circuit 15 is 1, the pre-stage amplification circuit 17, the input matching circuit 15, and the conversion circuit 18 may be connected in series in this order. The input end of the pre-stage amplifying circuit 17 is connected with the radio frequency input signal RFin, and the output end of the conversion circuit 18 is connected with the 2 driving stage circuits 13.
When the number of input matching circuits 15 is 2. The pre-amplifier circuit 17 is connected to the 2 input matching circuits 15 through the conversion circuit 18. The input end of the pre-stage amplifying circuit 17 is connected with a radio frequency input signal RFin, and the output ends of the 2 input matching circuits 15 are respectively connected with a driving stage circuit 13.
Optionally, in the embodiment of fig. 6, the method may further include: and the merging circuit is used for performing phase compensation processing on the radio frequency output signal RFout2 and the radio frequency output signal RFout1 to enable the phases of the radio frequency output signal RFout2 and the radio frequency output signal RFout1 to be the same, so that an in-phase signal is obtained, and the in-phase signal is provided for the antenna.
In the embodiment of fig. 6, the structure of the rf power amplifying circuit is a differential structure, and the rf power amplifying circuit with the differential structure can further increase the power of the output signal, improve the linearity of the rf power amplifying circuit, and further suppress the even harmonic generated by the rf power amplifying circuit to a certain extent, thereby reducing the interference of the even harmonic to the output signal.
In the present application, the N-type device may be an N-channel Metal-Oxide-Semiconductor Field-Effect Transistor (NMOSFET), or may be one or more of an N-channel JFET, an N-channel MESFET, an N-channel HEMT, and an NPN-type bipolar Transistor.
In the present application, the P-type device may be a P-channel Metal-Oxide-Semiconductor Field-Effect Transistor (PMOSFET), or may be one or more of a P-channel JFET, a P-channel MESFET, a P-channel HEMT, and a PNP-type bipolar Transistor.
When the N-type device and the P-type device are field effect transistors, the first terminals of MN1 to MN6 and MP1 in the rf power amplifier circuit are gates, the second terminal is a drain, and the third terminal is a source.
When the N-type device and the P-type device are bipolar transistors, the first terminals of MN1 to MN6 and MP1 in the rf power amplifier circuit are bases, the second terminals are collectors, and the third terminals are emitters.
The embodiment of the present application further provides a communication module, where the communication module includes the radio frequency power amplifying circuit in any one of the above embodiments.
The embodiment of the present application further provides a chip, where the chip includes the radio frequency power amplification circuit in any one of the above embodiments.
The embodiment of the present application further provides a transceiver, where the transceiver includes the chip in any one of the above embodiments.
The embodiment of the present application further provides a communication device, where the communication device includes the above chip (or transceiver). The communication device may be a network device or a terminal device.
A network device: the device is a device with wireless transceiving function. Including but not limited to: an evolved Node B (eNB or eNodeB) in a Long Term Evolution (LTE), a base station (gbnodeb or gNB) or TRP in a New Radio (NR) technology, a base station in a subsequent evolution system, an access Node in a wireless fidelity (WiFi) system, a wireless relay Node, a wireless backhaul Node, and the like. The base station may be: macro base stations, micro base stations, pico base stations, small stations, relay stations, or balloon stations, etc. Multiple base stations may support the same technology network as mentioned above, or different technologies networks as mentioned above. A base station may include one or more co-sited or non-co-sited Transmission Reception Points (TRPs).
A terminal device: the device is a device with wireless transceiving function. The terminal equipment can be deployed on land, including indoor or outdoor, handheld, wearable or vehicle-mounted; can also be deployed on the water surface (such as a ship and the like); and may also be deployed in the air (e.g., airplanes, balloons, satellites, etc.). The terminal device may be a mobile phone (mobile phone), a tablet computer (Pad), a computer with a wireless transceiving function, a Virtual Reality (VR) terminal device, an Augmented Reality (AR) terminal device, a wireless terminal in industrial control (industrial control), a vehicle-mounted terminal device, a wireless terminal in self driving (self driving), a wireless terminal in remote medical (remote medical), a wireless terminal in smart grid (smart grid), a wireless terminal in transportation safety (transportation safety), a wireless terminal in smart city (smart city), a wireless terminal in smart home (smart home), a wearable terminal device, and the like. The terminal device according to the embodiments of the present application may also be referred to as a terminal, a User Equipment (UE), an access terminal device, a vehicle-mounted terminal, an industrial control terminal, a UE unit, a UE station, a mobile station, a remote terminal device, a mobile device, a UE terminal device, a wireless communication device, a UE agent, or a UE apparatus. The terminal equipment may also be fixed or mobile.
Finally, it should be noted that: the above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and these modifications or substitutions do not depart from the scope of the technical solutions of the embodiments of the present application.

Claims (12)

1. A radio frequency power amplification circuit, comprising: the power amplifier comprises a power control circuit, a power level circuit, a driving level circuit and an output impedance matching circuit, wherein the driving level circuit is respectively connected with the power control circuit and the power level circuit, and the power level circuit is also connected with the output impedance matching circuit;
the power control circuit is used for determining to provide power for the driving stage circuit according to a radio frequency intermediate signal and an output power control signal Vramp or according to the output power control signal Vramp based on a received working mode control signal, wherein the working mode comprises a linear working mode of the power amplifier and a saturation working mode of the power amplifier;
the driving stage circuit is used for receiving a radio frequency input signal, amplifying the radio frequency input signal according to the power supply, generating a radio frequency intermediate signal, and respectively providing the radio frequency intermediate signal to the power control circuit and the power stage circuit; the radio frequency intermediate signal is used for providing bias voltage for the power stage circuit;
the power stage circuit is used for amplifying the radio frequency intermediate signal according to the bias voltage to obtain a radio frequency amplified signal and providing the radio frequency amplified signal to the output impedance matching circuit;
and the output impedance matching circuit is used for performing impedance transformation matching on the radio frequency amplification signal to obtain a radio frequency output signal and providing the radio frequency output signal for an antenna.
2. The radio frequency power amplification circuit of claim 1, wherein the power control circuit comprises: the low dropout linear regulator, the filter circuit and the first N-type device;
the first end of the low dropout regulator is connected with the working mode control signal, the second end of the low dropout regulator is connected with the output power control signal Vramp, the third end of the low dropout regulator is connected with the first input end of the driving stage circuit, and the fourth end of the low dropout regulator is connected with the second end of the first N-type device through the filter circuit;
the first end of the first N-type device is connected with the output end of the driving stage circuit;
the low dropout linear regulator provides the power supply for the driving stage circuit, and the output end of the driving stage circuit provides the radio frequency intermediate signal.
3. The radio frequency power amplification circuit of claim 1, wherein the driver stage circuit comprises: the first capacitor, the second capacitor, the first P type device, the second N type device and the feedback circuit;
the first capacitor is respectively connected with the radio frequency input signal and a first end of the first P-type device, the first end of the first P-type device is also connected with a first bias voltage, a second end of the first P-type device is connected with a second end of the second N-type device, and a third end of the first P-type device is connected with the power control circuit;
the second capacitor is respectively connected with the radio frequency input signal and the first end of the second N-type device, and the third end of the second N-type device is grounded;
an input terminal of the feedback circuit is connected between the second terminal of the second N-type device and the second terminal of the first P-type device, and an output terminal of the feedback circuit is connected between the second capacitor and the first terminal of the second N-type device;
outputting the radio frequency intermediate signal between the second terminal of the first P type device and the second terminal of the second N type device.
4. The radio frequency power amplification circuit of claim 1, wherein the power stage circuit comprises: a first inductor, a fourth N-type device, wherein,
the first inductor is respectively connected with a first voltage and a second end of the fourth N-type device, and a first end of the fourth N-type device is connected with the driving stage circuit;
and the radio frequency amplification signal is output by the connection point of the first inductor and the second end of the fourth N-type device.
5. The radio frequency power amplification circuit of claim 2, wherein the power control circuit further comprises: a third N-type device;
the first end of the third N-type device is connected with a second bias voltage, the second end of the third N-type device is connected with the filter circuit, and the third end of the third N-type device is connected with the second end of the first N-type device.
6. The radio frequency power amplification circuit of claim 4, wherein the power stage circuit further comprises: a fifth N type device and a sixth N type device;
a first terminal of the fifth N-type device is connected with a second bias voltage, a second terminal of the fifth N-type device is connected with a third terminal of the sixth N-type device, and the third terminal of the fifth N-type device is connected with a second terminal of the fourth N-type device;
a first terminal of the sixth N-type device is connected to the third bias voltage, and a second terminal of the sixth N-type device is connected to the first inductor;
an input end of the output impedance matching circuit is connected to a connection point of the first inductor and the second end of the sixth N-type device.
7. The radio frequency power amplification circuit of any one of claims 1-6, further comprising: an input matching circuit;
the input end of the input matching circuit receives a modulation signal, and the output end of the input matching circuit is connected with the driving stage circuit.
8. The radio frequency power amplification circuit of any one of claims 1-6, further comprising: an interstage impedance matching circuit;
the interstage impedance matching circuit is connected to a connection point of the power stage circuit and the driver stage circuit.
9. The radio frequency power amplification circuit of any one of claims 1-6, further comprising: a pre-amplifier circuit;
the input end of the pre-stage amplifying circuit receives a modulation signal, and the output end of the pre-stage amplifying circuit is connected with the driving stage circuit.
10. The radio frequency power amplification circuit of any one of claims 1-6, further comprising: a conversion circuit;
the number of the power control circuits, the number of the power level circuits and the number of the driving level circuits are all 2, and one driving level circuit is respectively connected with one power control circuit and one power level circuit;
the conversion circuit is respectively connected with a modulation signal and 2 driving stage circuits;
the conversion circuit is used for converting the modulation signal into two paths of radio frequency input signals with the phase difference value equal to a preset value and providing one path of radio frequency input signals for one driving stage circuit.
11. A chip comprising the radio frequency power amplification circuit of any one of claims 1-10.
12. A communication device, characterized in that it comprises a chip as claimed in claim 11.
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