CN101615891A - Radio-frequency (RF) power amplifier circuit, power control chip and radio-frequency power amplifying method - Google Patents
Radio-frequency (RF) power amplifier circuit, power control chip and radio-frequency power amplifying method Download PDFInfo
- Publication number
- CN101615891A CN101615891A CN200910057633A CN200910057633A CN101615891A CN 101615891 A CN101615891 A CN 101615891A CN 200910057633 A CN200910057633 A CN 200910057633A CN 200910057633 A CN200910057633 A CN 200910057633A CN 101615891 A CN101615891 A CN 101615891A
- Authority
- CN
- China
- Prior art keywords
- power
- radio
- frequency
- power control
- stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses a kind of radio-frequency (RF) power amplifier circuit, comprise the driving stage and the amplifying stage that are connected in series, also comprise a power control circuit, described power control circuit provides driving power for described driving stage, to control the power output of described driving stage.The invention also discloses a kind of power control chip, comprise above-mentioned radio-frequency (RF) power amplifier circuit in the described power control chip.The invention also discloses a kind of radio-frequency power amplifying method, tandem drive level successively and amplifying stage between input signal and output signal, adopt a power control circuit,, thereby control the power output of described driving stage for the driving stage in the radio-frequency (RF) power amplifier circuit provides driving power.The invention enables power control circuit only the power output of driving stage to be controlled, thereby simplify the structure of radio-frequency power amplifier, and reduced the area of power control chip, improved the integrated level of device, reduced production cost.
Description
Technical field
The present invention relates to a kind of analog circuit, especially a kind of radio-frequency (RF) power amplifier circuit.The invention still further relates to a kind of chip, especially a kind of power control chip of radio-frequency (RF) power amplifier circuit.The invention still further relates to a kind of radio-frequency power amplifying method.
Background technology
In modern wireless communication systems, radio-frequency power amplifier is a critical component of realizing the radiofrequency signal wireless transmission, and power control chip is the important component part of radio frequency power amplification modules.The major function of power control circuit is the power output of control power amplifiers, generally by the ramp signal controlling of the DAC in the baseband circuit (Digital to Analog Converter, digital to analog converter) output, uses V usually
RampExpression.
For the design of power control circuit, existing technology mainly realizes control to the radio frequency power amplifier output power by dual mode: 1. the power supply supply power voltage of control power amplifiers; 2. the power supply supply current of control power amplifiers.
As shown in Figure 1, the voltage or the electric current of power control circuit control radio-frequency power amplifier driving stage and amplifying stage, G represents with variable, variable G is with V
RampBe the function of independent variable, can be expressed as G=G
0(V
Ramp).The power output of radio-frequency power amplifier is with V
RampVariation and change.When radio-frequency power amplifier was operated in peak power output, operating current was very big usually.With the GSM radio-frequency power amplifier is example, and when the radio-frequency power amplifier power output was 34dBm, operating current was about 1.3A.Therefore, be used for the voltage of control power amplifiers or the transistor of electric current in the power control circuit and must have very strong overcurrent capability.Because transistorized overcurrent capability is directly proportional with transistorized junction area, the area of usually big current transistor accounts for the The whole control chip area more than 50%, so the power control circuit area of chip depends primarily on the area of big current transistor.Therefore, existing radio-frequency (RF) power amplifier circuit structure more complicated, and also excessive transistor area makes the power control circuit chip area be difficult to reduce, and is unfavorable for the reduction of the integrated and production cost of device.
Summary of the invention
Technical problem to be solved by this invention provides a kind of radio-frequency (RF) power amplifier circuit, a kind of power control chip of radio-frequency power amplifier, and a kind of radio-frequency power amplifying method, can simplify the structure of radio-frequency power amplifier, and can reduce the area of power control chip, improve the integrated level of device, reduce production costs.
For solving the problems of the technologies described above, the technical scheme of radio-frequency (RF) power amplifier circuit of the present invention is, comprises the driving stage and the amplifying stage that are connected in series, also comprises a power control circuit, described power control circuit provides driving power for described driving stage, to control the power output of described driving stage.
The technical scheme of power control chip of the present invention is to comprise above-mentioned radio-frequency (RF) power amplifier circuit in the described power control chip.
The technical scheme of radio-frequency power amplifying method of the present invention is, tandem drive level successively and amplifying stage between input signal and output signal, adopt a power control circuit,, thereby control the power output of described driving stage for the driving stage in the radio-frequency (RF) power amplifier circuit provides driving power.
The invention enables power control circuit only the power output of driving stage to be controlled, thereby simplify the structure of radio-frequency power amplifier, and reduced the area of power control chip, improved the integrated level of device, reduced production cost.
Description of drawings
The present invention is further detailed explanation below in conjunction with drawings and Examples:
Fig. 1 is the structure chart of existing radio-frequency (RF) power amplifier circuit;
Fig. 2 is the structure chart of radio-frequency (RF) power amplifier circuit of the present invention;
Fig. 3 is the structure chart of the power control circuit of one embodiment of the invention.
Embodiment
The invention provides a kind of radio-frequency (RF) power amplifier circuit, comprise the driving stage and the amplifying stage that are connected in series, also comprise a power control circuit, described power control circuit provides driving power for described driving stage, to control the power output of described driving stage.
Described driving power is a voltage source, and the supply voltage that described power control circuit is connected to driving stage by change is controlled the power output of described driving stage.
The power end of described amplifying stage is directly connected to a fixing driving power.
The present invention also provides a kind of power control chip, comprises above-mentioned radio-frequency (RF) power amplifier circuit in the described power control chip.
Described power control chip adopts CMOS technology.
The present invention also provides a kind of radio-frequency power amplifying method, tandem drive level successively and amplifying stage between input signal and output signal, adopt a power control circuit,, thereby control the power output of described driving stage for the driving stage in the radio-frequency (RF) power amplifier circuit provides driving power.
As shown in Figures 2 and 3, among this embodiment power control circuit with voltage source as driving power.In the radio-frequency power amplifier chip, by the supply voltage of power control circuit control radio-frequency power amplifier driving stage, with the unified expression of variable G, it is with V among the present invention
RampFunction for independent variable is expressed as G=G
0(V
Ramp), the dc power supply terminal of radio-frequency power amplifier amplifying stage directly links to each other with supply voltage.Power control circuit is realized the control to whole radio-frequency power amplifier power output by the supply voltage or the electric current of control radio-frequency power amplifier driving stage.
The embodiment of power control circuit of the present invention as shown in Figure 3, this power control circuit chip can adopt CMOS technology, by the supply voltage V of control radio-frequency power amplifier driving stage
CC_drRealization is to whole radio-frequency power amplifier power output P
OutControl.System is by the control signal V of the DAC output of baseband circuit
RampControl V
CC_drBe with V
RampBe the function of independent variable, its expression formula is:
Coefficient k wherein, V
Offset, V
Ref1Be constant.Work as V
RampDuring change, the supply voltage V of radio-frequency power amplifier driving stage
CC_drChange, again because the power output P of radio-frequency power amplifier driving stage thereupon
Out_drWith V
CC_drVariation and change, so the power output P of radio-frequency power amplifier driving stage
Out_drAlso be with V
RampBe the function of independent variable, can be expressed as P
Out_dr=P
0(V
Ramp).
Because the power output P of radio-frequency power amplifier driving stage
Out_drInput power P with amplifying stage
In_amEquate, so, P
In_am=P
Out_dr=P
0(V
Ramp).If the power gain of radio-frequency power amplifier amplifying stage is G
P, then the power output of radio-frequency power amplifier is:
P
out＝G
P·P
in_am＝G
P·P
out_dr＝G
P·P
0(V
ramp)。
Can get radio-frequency power amplifier power output P by following formula
OutWith V
RampVariation and change, thereby power control circuit has been realized the control to the radio frequency power amplifier output power.
In sum, the invention enables power control circuit only the power output of driving stage to be controlled, thereby simplify the structure of radio-frequency power amplifier, and reduced the area of power control chip, improved the integrated level of device, reduced production cost.
Claims (6)
1. a radio-frequency (RF) power amplifier circuit comprises the driving stage and the amplifying stage that are connected in series, it is characterized in that, also comprises a power control circuit, and described power control circuit provides driving power for described driving stage, to control the power output of described driving stage.
2. radio-frequency (RF) power amplifier circuit according to claim 1 is characterized in that described driving power is a voltage source, and the supply voltage that described power control circuit is connected to driving stage by change is controlled the power output of described driving stage.
3. radio-frequency (RF) power amplifier circuit according to claim 1 is characterized in that, the power end of described amplifying stage is directly connected to a fixing driving power.
4. a power control chip is characterized in that, comprises in the described power control chip as any described radio-frequency (RF) power amplifier circuit in the claim 1～3.
5. power control chip according to claim 4 is characterized in that, described power control chip adopts CMOS technology.
6. radio-frequency power amplifying method, tandem drive level successively and amplifying stage is characterized in that between input signal and output signal, adopt a power control circuit, for the driving stage in the radio-frequency (RF) power amplifier circuit provides driving power, thereby control the power output of described driving stage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910057633A CN101615891A (en) | 2009-07-23 | 2009-07-23 | Radio-frequency (RF) power amplifier circuit, power control chip and radio-frequency power amplifying method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910057633A CN101615891A (en) | 2009-07-23 | 2009-07-23 | Radio-frequency (RF) power amplifier circuit, power control chip and radio-frequency power amplifying method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101615891A true CN101615891A (en) | 2009-12-30 |
Family
ID=41495355
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910057633A Pending CN101615891A (en) | 2009-07-23 | 2009-07-23 | Radio-frequency (RF) power amplifier circuit, power control chip and radio-frequency power amplifying method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101615891A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104485904A (en) * | 2015-01-03 | 2015-04-01 | 广州钧衡微电子科技有限公司 | Wideband radio frequency power amplifier |
| CN109995330A (en) * | 2017-12-29 | 2019-07-09 | 锐迪科创微电子（北京）有限公司 | A kind of power amplifier and power amplifier module with power protection |
| CN113437991A (en) * | 2021-06-28 | 2021-09-24 | 展讯通信（上海）有限公司 | Radio frequency power amplifying circuit, chip and communication equipment |
| CN113824411A (en) * | 2021-09-13 | 2021-12-21 | 上海橙群微电子有限公司 | Power amplifier and electronic device |
-
2009
- 2009-07-23 CN CN200910057633A patent/CN101615891A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104485904A (en) * | 2015-01-03 | 2015-04-01 | 广州钧衡微电子科技有限公司 | Wideband radio frequency power amplifier |
| CN109995330A (en) * | 2017-12-29 | 2019-07-09 | 锐迪科创微电子（北京）有限公司 | A kind of power amplifier and power amplifier module with power protection |
| CN109995330B (en) * | 2017-12-29 | 2023-09-15 | 锐迪科创微电子（北京）有限公司 | Power amplifier with power protection and power amplifier module |
| CN113437991A (en) * | 2021-06-28 | 2021-09-24 | 展讯通信（上海）有限公司 | Radio frequency power amplifying circuit, chip and communication equipment |
| CN113437991B (en) * | 2021-06-28 | 2022-12-06 | 展讯通信（上海）有限公司 | Radio frequency power amplifying circuit, chip and communication equipment |
| WO2023273417A1 (en) * | 2021-06-28 | 2023-01-05 | 展讯通信（上海）有限公司 | Radio frequency power amplification circuit, chip and communication device |
| CN113824411A (en) * | 2021-09-13 | 2021-12-21 | 上海橙群微电子有限公司 | Power amplifier and electronic device |
| CN113824411B (en) * | 2021-09-13 | 2023-08-29 | 上海橙群微电子有限公司 | Power amplifier and electronic equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10333470B2 (en) | Apparatus and methods for envelope tracking systems | |
| US9197162B2 (en) | Envelope tracking power supply voltage dynamic range reduction | |
| US9203353B2 (en) | Noise conversion gain limited RF power amplifier | |
| US7952433B2 (en) | Power amplifiers with discrete power control | |
| US9484150B2 (en) | Multi-mode power amplifying circuit, and multi-mode wireless transmission module and method thereof | |
| US7893770B2 (en) | Power amplification device | |
| JP4330549B2 (en) | High frequency power amplifier | |
| KR101746107B1 (en) | Adaptive Power Amplifier and RF Transmitter Including Same | |
| US10110168B2 (en) | Multi-mode stacked amplifier | |
| JP2007116694A (en) | Power amplifier in high-efficiency mixed mode | |
| Lee et al. | 2.7 A hybrid supply modulator with 10dB ET operation dynamic range achieving a PAE of 42.6% at 27.0 dBm PA output power | |
| US8688061B2 (en) | System and method for biasing a power amplifier | |
| CN104779922A (en) | High voltage envelope tracker for optimizing performance of radio frequency power amplifier | |
| CN101615891A (en) | Radio-frequency (RF) power amplifier circuit, power control chip and radio-frequency power amplifying method | |
| US20150244334A1 (en) | Amplification device and radio communication apparatus equipped with amplification device | |
| JP5313970B2 (en) | High frequency power amplifier | |
| CN103580619B (en) | A kind of power amplifier device and linear regulator | |
| JP5389567B2 (en) | High frequency amplifier and high efficiency method | |
| CN115242193A (en) | Voltage control device and power amplification system | |
| US10122323B2 (en) | Efficient wide bandwidth envelope tracking power supply | |
| US20120032744A1 (en) | Power amplifier | |
| US20100156531A1 (en) | Power amplifier, integrated circuit, and communication apparatus | |
| Son et al. | A hybrid envelope amplifier with switching-controlled structure for EDGE/WCDMA/LTE reconfigurable transmitters | |
| KR101318802B1 (en) | Voltage modulator | |
| KR101366617B1 (en) | Linear amplifier module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: RDA TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: RDA MICROELECTRONICS (SHANGHAI) CO., LTD. Effective date: 20100427 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201203 ROOM 302, BUILDING 2, NO.690, BIBO ROAD, PUDONG NEW DISTRICT, SHANGHAI CITY TO: HOUSE 22, ZHONGYIN BUILDING, MIDDLE 1ST ROAD, HONG KONG GARDEN |
|
| TA01 | Transfer of patent application right |
Effective date of registration: 20100427 Address after: 22 floor, Bank of China Tower, 1 Garden Road, Hongkong Applicant after: RDA Microelectronics Co., Ltd. Address before: 201203, room 2, building 690, No. 302 blue wave road, Shanghai, Pudong New Area Applicant before: RDA Microelectronics (Shanghai) Corp. Ltd. |
|
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20091230 |