CN104779922A - High voltage envelope tracker for optimizing performance of radio frequency power amplifier - Google Patents
High voltage envelope tracker for optimizing performance of radio frequency power amplifier Download PDFInfo
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Abstract
The invention discloses a high voltage envelope tracker for optimizing performance of a radio frequency power amplifier. The high voltage envelope tracker for optimizing the performance of the radio frequency power amplifier comprises a voltage boosting module, a voltage reducing module and a linear power driving module; the voltage boosting module converts a power voltage VBAT into a direct voltage which is a little larger than the maximum envelope signal according to a single-end envelope signal VAMP, and the direct voltage supplies power to the voltage reducing module and the linear power driving module; the voltage reducing module is matched with the linear power driving module to supply power to the radio frequency power amplifier to achieve undistorted power source envelope; the linear power driving module receives a pair of differential envelope signal inputs including Venvp and Venvn. The power source envelope of the radio frequency power amplifier can be controlled to optimize the efficiency of the radio frequency power amplifier in a wide output power range, the working band width of the radio frequency power amplifier is improved, and the efficiency of the whole radio frequency power amplifier can be improved.
Description
Technical field
the invention belongs to technical field of radio frequency integrated circuits, be specifically related to a kind of power supply envelope controlling radio-frequency power amplifier with the efficiency of optimizing power amplifier under wider output power range and improve the high voltage envelope tracker for optimizing radio-frequency power amplifier performance of its bandwidth of operation.
Background technology
radio-frequency power amplifier is critical component indispensable in various wireless communications application, carries out power amplification for the brewed radiofrequency signal exported by transceiver, to meet the power requirement of the radiofrequency signal needed for radio communication.Because contemporary portable wireless telecommunications system adopts powered battery usually, therefore very strict to the power consumption requirements of used unit in equipment.Radio-frequency power amplifier is the main power consumption parts of in transceiver, therefore must reduce its power consumption as far as possible, improves the efficiency of radio-frequency power amplifier.The method of current raising efficiency of RF power amplifier has following several:
1. optimize the linear efficiency of radio-frequency power amplifier
by Design of RF Power Amplifier is worked in the Switch state of RF power amplifier such as Class-E or Class-F, the efficiency of radio-frequency power amplifier can be promoted, for example, when power amplifier works in Class-E state, it most effectively reaches more than 75%.But, this kind of high efficiency switch power amplifier can sacrifice the linearity of power amplifier, therefore be only applicable to the modulation system requiring saturation power to export, such as 2G GSM modulation system, and be not suitable for the modulation system that 3G, 4G and WiFi etc. need linear power to export.
2. Doherty radio-frequency power amplifier
comprise two-way power amplification branch road in Doherty radio-frequency power amplifier, a road, as main power amplifier, works in the lower but good Class-AB state of the linearity of efficiency; An other road, as auxiliary power amplifier, works in the higher but Class-B/C state that the linearity is poor of efficiency.Two-way power amplifier completes power combing at respective output by impedance variation and power combiner.Doherty power amplifier, by this active load modulation technology, makes it in wider output power range, all keep higher efficiency, and can not seriously sacrifice the indexs such as the linearity of power amplifier.But the active load modulation technology in Doherty power amplifier, requires the microstrip transmission line of large-size usually, therefore Doherty power amplifier only has in fields such as wireless base stations and applies more widely, and cannot directly apply in portable radio terminal.
3. Outphasing radio-frequency power amplifier
chireix modulation (Outphasing) radio-frequency power amplifier requires that by one the variable envelope modulated signal of linear prower amplifier is decomposed into two constant envelope signals, and adopting two high efficiency Class-E/F power amplifiers to carry out power amplification to these two constant envelope signals respectively, the signal syntheses after being amplified by two-way by power combiner is more afterwards a road signal; Signal after the synthesis of this road remains varying envelope signal, does not lose the effective information wherein modulated.Chireix modulation radio-frequency power amplifier takes full advantage of the higher efficiency of switching amplifier, and can not sacrifice linearity index; Its shortcoming is, needs extra calculating and power dissipation overhead in signal decomposition part, and the more difficult design of the power combiner of Chireix modulation signal.These problems result also in Chireix modulation radio-frequency power amplifier and are not widely used on portable mobile termianl.
4. based on the radio-frequency power amplifier of envelope-tracking
the core concept of envelop following technology is the momentary power voltage by providing to radio-frequency power amplifier along with instantaneous rf signal envelope change in voltage, make radio-frequency power amplifier all keep higher operating efficiency under any instantaneous rf envelope, and the linearity index of radio-frequency power amplifier can not be sacrificed.
envelop following technology can make power amplifier keep efficiency operation in wider power bracket, radio communication base station and portable mobile termianl has all obtained and has applied comparatively widely.As the part of core the most in envelope-tracking system, the requirement of the modulation signal application that the bandwidth of envelope tracker and speed demand fulfillment become increasingly complex.
professional and technical personnel in the field institute is known, when power amplifier works in higher supply power voltage, is conducive to improving the bandwidth of operation of radio-frequency power amplifier, this for current application more and more widely 4G/LTE communication standard there is important positive effect.Therefore, realize the envelope tracker with high output voltage and high bandwidth, extremely important.
Summary of the invention
the present invention seeks to: a kind of high voltage envelope tracker for optimizing radio-frequency power amplifier performance is provided, the power supply envelope that can control radio-frequency power amplifier is with the efficiency of optimizing power amplifier under wider output power range and improve its bandwidth of operation, can improve the efficiency of whole radio-frequency power amplification system.
technical scheme of the present invention is:
for optimizing a high voltage envelope tracker for radio-frequency power amplifier performance, comprise boost module, voltage reduction module, linear power supply driver module;
described boost module, supply voltage VBAT changed into a direct voltage more bigger than largest enveloping signal according to single-ended envelope signal VAMP, described direct voltage is powered to voltage reduction module and linear power supply driver module;
described voltage reduction module coordinates together with linear power supply driver module to power to radio-frequency power amplifier thus to realize a distortionless power supply envelope; Described linear power supply driver module receives envelope signal input Venvp and Venvn of a pair difference.
further, described boost module comprises buck control module and buck power switch transistor, and described buck control module is realized by silicon base CMOS technique, and described buck power switch transistor is realized by GaAs pHEMT technique.
further, described voltage reduction module comprises step-down control module and buck switching power transistor, and described step-down control module is realized by silicon base CMOS technique, and described buck switching power transistor is realized by GaAs pHEMT technique.
further, to be included on silicon base CMOS chip two turns single amplifiers and pre-driver and GaAs pHEMT transistor for described linear power supply driver module.
further, also comprise MIPI digital interface module, for receiving control signal from outside to configure the mode of operation of envelope tracker.
further, described buck power switch transistor comprises the first transistor and transistor seconds, the source ground of described the first transistor, drain by the first inductance connection supply voltage VBAT, the source electrode of described transistor seconds is connected with the drain electrode of the first transistor, the drain electrode of described transistor seconds is by the first capacity earth, the grid of described the first transistor connects the first driver, the grid of described transistor seconds connects the second driver, and described second driver is by boostrap circuit boost source voltage.
further, described buck switching power transistor comprises third transistor and the 4th transistor, the source ground of described third transistor, grid connects the 3rd driver, the drain electrode of described third transistor is connected with the source electrode of the 4th transistor, and by the second inductance and the second capacity earth, the drain electrode of described 4th transistor connects the output of boost module, the grid of described 4th transistor connects four-wheel drive device, and described four-wheel drive device is by boostrap circuit boost source voltage.
further, described GaAs pHEMT transistor comprises the 5th transistor and the 6th transistor, the source ground of described 5th transistor, grid connects pre-driver, the drain electrode of described 5th transistor connects the source electrode of the 6th transistor, drain electrode connects the output of boost module, the grid of described 5th transistor connects the grid of the 7th transistor, the source ground of described 7th transistor, the grid of drain electrode connection the 6th transistor, the drain electrode of described 7th transistor also connects the drain electrode of the 6th transistor by resistance, the drain electrode of described 5th transistor also connects the output of voltage reduction module.
advantage of the present invention is:
1. complete pre-amplification and the process of controller function and envelope signal by silicon base CMOS technique, give full play to the large-scale integrated ability of CMOS technology; Use simultaneously and there is high performance GaAs pHEMT transistor, its high voltage endurance capability, low on-resistance and large gain bandwidth characteristic is utilized to produce one efficiently higher than input supply voltage and fast-changing power supply envelope, as the power supply of radio-frequency power amplifier as the switching power tube of dc-dc and linear amplifier.
2. higher supply power voltage requires higher output load impedance, thus can obtain wider bandwidth of operation, can improve the efficiency of whole radio-frequency power amplification system, can also optimize the linearity of radio-frequency power amplifier.
Accompanying drawing explanation
below in conjunction with drawings and Examples, the invention will be further described:
fig. 1 is the theory diagram that envelope tracker of the present invention is connected with two power amplifiers;
fig. 2 is the physical circuit figure of envelope tracker GaAs pHEMT of the present invention part;
fig. 3 is the input and output signal of envelope tracker of the present invention, and the time m-voltage curve of the output signal of radio-frequency power amplifier;
fig. 4 is the efficiency curve diagram of the whole radio-frequency power amplification system of the present invention;
fig. 5 is radio-frequency power amplifier bandwidth of operation curve chart of the present invention.
Embodiment
for making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with embodiment also with reference to accompanying drawing, the present invention is described in more detail.Should be appreciated that, these describe just exemplary, and do not really want to limit the scope of the invention.In addition, in the following description, the description to known features and technology is eliminated, to avoid unnecessarily obscuring concept of the present invention.
embodiment 1:
fig. 1 shows an envelope tracker proposed by the invention.Envelope tracker 101 receives the envelope signal input V of a pair difference
envp
and V
envn
, receive a single-ended envelope signal V extracted from differential envelope input simultaneously
aMP
; Process through envelope tracker obtains the supply voltage of one or several output signal as radio-frequency power amplifier.Having shown two power amplifiers 102 and 103 in FIG representatively, is for the power amplifier of 3G/4G standard and the power amplifier for 2G GSM standard respectively.The number of radio-frequency power amplifier can not be confined to two in actual applications, often more.Envelope tracker 101 mainly comprises following main functional modules:
1. boost module 104, its major function is according to single-ended envelope signal V
aMP
by cell voltage V
bAT
a direct voltage more bigger than largest enveloping signal is changed into by an efficient dc-dc.The direct voltage produced and the difference of largest enveloping signal are determined by the performance of radio-frequency power amplifier, can be arranged by extraneous.Boost module 104 mainly contains two parts and forms: buck control module FSM 1 and buck power switch transistor.In the present invention, buck control module is realized by silicon base CMOS technique, and buck power switch transistor is realized by GaAs pHEMT technique.Due to GaAs pHEMT device high pressure, fast and the characteristic such as low on-resistance, buck power switch transistor can reach better bandwidth of operation and operating efficiency here.
2. voltage reduction module 105, its major function is for external radio-frequency power amplifier provides electric current support, because voltage reduction module 105 is realized by a DC-DC based on BUCK, in order to the finite bandwidth of optimization efficiency and current tracking thereof, need a linear power supply driver module 106 to be mated and power to radio-frequency power amplifier together thus realize a distortionless power supply envelope.Voltage reduction module 105 is made up of two major parts: step-down control module FSM 2 and buck switching power transistor.Step-down control module in this programme is realized by silicon base CMOS technique, and buck switching power transistor is realized by GaAs pHEMT technique.Due to GaAs pHEMT device high pressure, fast and the characteristic such as low on-resistance, buck switching power transistor can reach better bandwidth of operation and operating efficiency here.Controller in voltage reduction module 105 supports quick level envelope-tracking when envelope-tracking pattern; Also provide an efficient direct voltage under being supported in radio-frequency power amplifier average power pattern, this pattern is average power tracing mode simultaneously.Under average power tracing mode, voltage reduction module 105 is operated under a slower operating frequency as radio-frequency power amplifier provides supply voltage.In this programme, the power supply of voltage reduction module 105 is produced by boost module 104, and its main purpose is to make envelope tracker provide one higher than the operating voltage of input supply voltage for radio-frequency power amplifier.
3. linear power supply driver module 106, its major function is the high fdrequency component provided for radio-frequency power amplifier in output voltage.Under envelope-tracking pattern, the power electric of radio-frequency power amplifier is pressed with saltus step faster, and such as, in order to support the signal of LTE 100RB, its envelope variation frequency can reach tens of MHz.And voltage reduction module 105 can only support at most the mains voltage variations of about 1MHz, remainder all needs to be completed by linear power supply driver module 106, this require linear power supply driver module 106 support the bandwidth of nearly hundred MHz to meet power supply high speed change.This programme adopts the power transistor of GaAs pHEMT technique to complete the Linear actuator of supply voltage, completes the envelope conversion in early stage and amplify the Linear Driving supported based on closed loop by silicon base CMOS technique.In this programme, the power supply of linear power supply driver module 106 is produced by boost module 104, and its main purpose is to make envelope tracker provide one higher than the operating voltage of input supply voltage for radio-frequency power amplifier.
4. LDO 108 on the biasing circuit of power amplifier and sheet, its major function be to provide radio-frequency power amplifier bias current and for the bias current of envelope tracker and voltage.On biasing circuit and sheet, LDO 108 can provide temperature change compensation and process corner to compensate for radio-frequency power amplifier, promotes the stability of radio-frequency power amplifier.
5. MIPI digital interface module 109, its major function is that the control signal of reception from outside is to configure the mode of operation of envelope tracker.
6. the diverter switch 107 time for changing between different mode, the major function of these switches has been adding and putting out of electric capacity needed under different mode.
this programme proposition silicon base CMOS technique completes pre-amplification and the process of controller function and envelope signal, gives full play to the large-scale integrated ability of CMOS technology; Use simultaneously and there is high performance GaAs pHEMT transistor, its high voltage endurance capability, low on-resistance and large gain bandwidth characteristic is utilized to produce one efficiently higher than input supply voltage and fast-changing power supply envelope, as the power supply of radio-frequency power amplifier as the switching power tube of dc-dc and linear amplifier.
fig. 2 gives the physical circuit realization figure of the GaAs pHEMT part of this programme.GaAs pHEMT transistor 301 and 302 is power switch transistors of boost DC-DC, and its effect is to provide efficient switch motion and has come a lower input supply voltage V
bAT
convert a higher output voltage V to
bOOST
.Based on the driver 303 and 304 of GaAs pHEMT technique for driving switch power transistor 301 and 302.Inductance 308 is the energy-storage travelling wave tubes in boost DC-DC, has high Q value and its inductance value is comparatively large owing to requiring this inductance, and this programme adopts the implementation of the outer chip inductor of sheet.Electric capacity 307 is for storing the electric charge of the high pressure of generation and realizing filter function.Because GaAs pHEMT only has N-type device, if only larger pressure drop can be produced on signal path with supply voltage transistor 302, thus reduce the efficiency of boost converter.In order to reduce the reduction of this efficiency, this programme boostrap circuit that have employed based on GaAs pHEMT raises the supply voltage of driver 303, is made up of diode 305 and electric capacity 306.When 301 conductings during 302 cut-off, electric capacity 306 charges to supply voltage VBAT and cuts a diode threshold voltage, when 301 cut-offs during 302 conducting, the electric current of inductance 308 can make the drain electrode of power tube 301,302 source voltage raise, raise the supply voltage of driver 303 through electric capacity 306; Now diode 305 is reverse-biased, blocks the path between the supply voltage of driver 303 and cell voltage VBAT.In order to coordinate boost function, this programme on silicon base CMOS chip, achieve controller 323 and corresponding driver 321 and 322 drives the driver on GaAs pHEMT chip.
identical with boost module, GaAs pHEMT transistor 309 and 310 is power switch transistors of buck DC-DC, and its effect is to provide the high voltage V that efficient switch motion has come boost module to produce
bOOST
convert a lower output voltage to.Driver 311 and 312 is for driving switch power transistor 310 and 309.Inductance 316 is the energy-storage travelling wave tubes in buck DC-DC, has high Q value and its inductance value is comparatively large owing to requiring this inductance, and this programme adopts the implementation of the outer chip inductor of sheet.Electric capacity 315 is for storing the electric charge of the low pressure of generation and realizing filter function.
because GaAs pHEMT only has N-type device, if only larger pressure drop can be produced on signal path with supply voltage transistor 310, thus lower the efficiency of step-down controller.In order to reduce the reduction of this efficiency, this programme boostrap circuit that have employed based on GaAs pHEMT raises the supply voltage of driver 311, is made up of diode 313 and electric capacity 314.When 309 conductings during 310 cut-off, electric capacity 314 charges to supply voltage VBAT and cuts a diode threshold voltage, when 309 cut-offs during 310 conducting, the electric current of inductance 316 can make the drain electrode of power tube 309,310 source voltage raise, raise the supply voltage of driver 311 through electric capacity 314; Now diode 313 is reverse-biased, blocks the path between the supply voltage of driver 311 and cell voltage VBAT.In order to coordinate buck functionality, this programme on silicon base CMOS chip, achieve controller 326 and corresponding driver 324 and 325 drives the driver on GaAs pHEMT chip.
in order to support envelope-tracking fast, this programme have employed the linear power supply driver module of a hybrid integrated, and power drive level is made up of GaAs pHEMT transistor 317 and 318, and the amplifier of prime is made up of resistance 320 on GaAs pHEMT transistor 319 and sheet.Silicon base CMOS chip there is two single amplifiers 328 and pre-driver 327 of turning complete process to input envelope signal and amplification.
fig. 3 shows the input and output signal of envelope tracker, and the output signal of radio-frequency power amplifier.Curve 401 and 402 is Differential Input of envelope tracker, and curve 403 is output supply voltages as radio-frequency power amplifier of envelope tracker.The output envelope 403 of envelope tracker is the signal after input envelope signal 401,402 amplifies; Curve 404 is output signals of radio-frequency power amplifier, and its envelope 405 is similar with the output envelope 403 of envelope tracker.
the object of this programme is the efficiency in order to improve whole radio-frequency power amplification system, as shown in Figure 4.Curve 502 represents the efficiency of radio-frequency power amplifier under stabilized power source voltage condition; Curve 501 represents the overall efficiency adopting envelope tracker to whole radio-frequency power amplification system after radio-frequency power amplifier is powered, its peak efficiencies lower than the peak efficiencies of the radio-frequency power amplifier under stabilized power source voltage, but greatly improves efficiency power amplifier when other low power output.Meanwhile, in Setting signal envelope situation, envelope tracker can also optimize the linearity of radio-frequency power amplifier.From another perspective, system can combine the envelope modulation of static predistortion and power amplifier.
when power output is identical, higher supply power voltage requires higher output load impedance, thus can obtain wider bandwidth of operation, as shown in Figure 5.Curve 602 represents radio-frequency power amplifier bandwidth of operation at lower supply voltages; Curve 601 represents the bandwidth of operation of radio-frequency power amplifier under higher supply voltage.Envelope tracker proposed by the invention has boost function, can provide supply power voltage higher than cell voltage for radio-frequency power amplifier, thus contributes to the bandwidth of operation improving radio-frequency power amplifier.
should be understood that, above-mentioned embodiment of the present invention only for exemplary illustration or explain principle of the present invention, and is not construed as limiting the invention.Therefore, any amendment made when without departing from the spirit and scope of the present invention, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.In addition, claims of the present invention be intended to contain fall into claims scope and border or this scope and border equivalents in whole change and modification.
Claims (8)
1. for optimizing a high voltage envelope tracker for radio-frequency power amplifier performance, it is characterized in that, comprising boost module, voltage reduction module, linear power supply driver module;
Described boost module, according to single-ended envelope signal V
aMPby supply voltage V
bATchange a direct voltage more bigger than largest enveloping signal into, described direct voltage is powered to voltage reduction module and linear power supply driver module;
Described voltage reduction module coordinates together with linear power supply driver module to power to radio-frequency power amplifier thus to realize a distortionless power supply envelope; Described linear power supply driver module receives the envelope signal input V of a pair difference
envpand V
envn.
2. the high voltage envelope tracker for optimizing radio-frequency power amplifier performance according to claim 1, it is characterized in that, described boost module comprises buck control module and buck power switch transistor, described buck control module is realized by silicon base CMOS technique, and described buck power switch transistor is realized by GaAs pHEMT technique.
3. the high voltage envelope tracker for optimizing radio-frequency power amplifier performance according to claim 1, it is characterized in that, described voltage reduction module comprises step-down control module and buck switching power transistor, described step-down control module is realized by silicon base CMOS technique, and described buck switching power transistor is realized by GaAs pHEMT technique.
4. the high voltage envelope tracker for optimizing radio-frequency power amplifier performance according to claim 1, it is characterized in that, to be included on silicon base CMOS chip two turns single amplifiers and pre-driver and GaAs pHEMT transistor for described linear power supply driver module.
5. the high voltage envelope tracker for optimizing radio-frequency power amplifier performance according to any one of claim 1-4, it is characterized in that, also comprise MIPI digital interface module, for receiving control signal from outside to configure the mode of operation of envelope tracker.
6. the high voltage envelope tracker for optimizing radio-frequency power amplifier performance according to claim 2, it is characterized in that, described buck power switch transistor comprises the first transistor and transistor seconds, the source ground of described the first transistor, drains by the first inductance connection supply voltage V
bATthe source electrode of described transistor seconds is connected with the drain electrode of the first transistor, the drain electrode of described transistor seconds is by the first capacity earth, the grid of described the first transistor connects the first driver, the grid of described transistor seconds connects the second driver, and described second driver is by boostrap circuit boost source voltage.
7. the high voltage envelope tracker for optimizing radio-frequency power amplifier performance according to claim 3, it is characterized in that, described buck switching power transistor comprises third transistor and the 4th transistor, the source ground of described third transistor, grid connects the 3rd driver, the drain electrode of described third transistor is connected with the source electrode of the 4th transistor, and by the second inductance and the second capacity earth, the drain electrode of described 4th transistor connects the output of boost module, the grid of described 4th transistor connects four-wheel drive device, described four-wheel drive device is by boostrap circuit boost source voltage.
8. the high voltage envelope tracker for optimizing radio-frequency power amplifier performance according to claim 4, it is characterized in that, described GaAs pHEMT transistor comprises the 5th transistor and the 6th transistor, the source ground of described 5th transistor, grid connects pre-driver, the drain electrode of described 5th transistor connects the source electrode of the 6th transistor, drain electrode connects the output of boost module, the grid of described 5th transistor connects the grid of the 7th transistor, the source ground of described 7th transistor, the grid of drain electrode connection the 6th transistor, the drain electrode of described 7th transistor also connects the drain electrode of the 6th transistor by resistance, the drain electrode of described 5th transistor also connects the output of voltage reduction module.
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| CN105871209A (en) * | 2016-03-29 | 2016-08-17 | 宜确半导体（苏州）有限公司 | Regenerative feedback circuit, DC-DC voltage converter and envelope tracker |
| CN108809260A (en) * | 2018-04-24 | 2018-11-13 | 陕西亚成微电子股份有限公司 | A kind of control method of power supply for radio-frequency power amplifier |
| CN109245730A (en) * | 2018-08-21 | 2019-01-18 | 中国科学院微电子研究所 | Switch power amplifier and digital transmitter |
| CN110719073A (en) * | 2019-10-09 | 2020-01-21 | 广州粒子微电子有限公司 | Mixed envelope modulation method and circuit applied to radio frequency power amplifier |
| CN111490736A (en) * | 2019-01-25 | 2020-08-04 | 联发科技股份有限公司 | Power supply |
| WO2021062685A1 (en) * | 2019-09-30 | 2021-04-08 | 华为技术有限公司 | Envelope tracking modulator and transmitting device |
| CN112671352A (en) * | 2020-11-26 | 2021-04-16 | 钢研纳克检测技术股份有限公司 | Ion funnel radio frequency driving power supply of portable mass spectrometer |
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| CN118174667A (en) * | 2024-05-13 | 2024-06-11 | 浙江大学 | Radio frequency power amplifier applied to terminal and wireless transmitting system |
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| CN105871209A (en) * | 2016-03-29 | 2016-08-17 | 宜确半导体（苏州）有限公司 | Regenerative feedback circuit, DC-DC voltage converter and envelope tracker |
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| WO2021062685A1 (en) * | 2019-09-30 | 2021-04-08 | 华为技术有限公司 | Envelope tracking modulator and transmitting device |
| CN110719073A (en) * | 2019-10-09 | 2020-01-21 | 广州粒子微电子有限公司 | Mixed envelope modulation method and circuit applied to radio frequency power amplifier |
| CN110719073B (en) * | 2019-10-09 | 2024-02-23 | 广州粒子微电子有限公司 | Hybrid envelope modulation method and circuit applied to radio frequency power amplifier |
| CN112671352A (en) * | 2020-11-26 | 2021-04-16 | 钢研纳克检测技术股份有限公司 | Ion funnel radio frequency driving power supply of portable mass spectrometer |
| CN112671352B (en) * | 2020-11-26 | 2024-05-24 | 钢研纳克检测技术股份有限公司 | Ion funnel radio frequency driving power supply of portable mass spectrometer |
| CN114696758A (en) * | 2020-12-31 | 2022-07-01 | 圣邦微电子（北京）股份有限公司 | Envelope synthesis power supply and radio frequency power module with envelope synthesis power supply |
| CN118174667A (en) * | 2024-05-13 | 2024-06-11 | 浙江大学 | Radio frequency power amplifier applied to terminal and wireless transmitting system |
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