CN113437108A - Mass transfer structure for micro LED display and manufacturing method - Google Patents
Mass transfer structure for micro LED display and manufacturing method Download PDFInfo
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- CN113437108A CN113437108A CN202110845895.9A CN202110845895A CN113437108A CN 113437108 A CN113437108 A CN 113437108A CN 202110845895 A CN202110845895 A CN 202110845895A CN 113437108 A CN113437108 A CN 113437108A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 238000004806 packaging method and process Methods 0.000 claims abstract description 27
- 238000003466 welding Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 10
- 230000000694 effects Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
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- 238000009434 installation Methods 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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Abstract
The invention discloses a massive transfer structure for Micro LED display and a manufacturing method thereof, wherein the massive transfer structure comprises a packaging substrate, a first Micro-LED crystal grain, an upper pixel electrode, a lower pixel electrode, a second Micro-LED crystal grain and a driving substrate, wherein the surface of the packaging substrate is provided with a plurality of upper grooves for accommodating the first Micro-LED crystal grain and the upper pixel electrode, and the first Micro-LED crystal grain is welded in the upper grooves at low temperature; the invention has the beneficial effects that: the Micro-LED chip is prevented from being influenced by high-temperature welding through the combination of a low-temperature welding technology and vibration assembly, the production yield is improved, and the cost is low; when the packaging substrate and the driving substrate are assembled in a group, the electric connection between the upper pixel electrode and the upper electrode of the micro LED is realized through the elastic conducting layer, the height difference between the micro LEDs is filled by utilizing the elasticity of the elastic conducting layer, the poor connection between the upper pixel electrode and the upper electrode of the micro LED is avoided, and the assembling effect of the micro LED display panel and the process yield of the micro LED display panel are improved.
Description
Technical Field
The invention belongs to the technical field of MicroLED, and particularly relates to a massive transfer structure for MicroLED display and a manufacturing method thereof.
Background
MicroLED is regarded as replacing TFT-LCD and OLED display's next generation display technique, establishes on the basis of LED high efficiency, and ideal MicroLED display has high pixel, high contrast, self-luminous, low energy consumption and long-lived advantage, and is ready for reading.
The conventional micro LED can be divided into a vertical micro LED and a horizontal micro LED according to different structures, two electrodes of the vertical micro LED are respectively positioned at the upper side and the lower side of a light emitting layer, and two electrodes of the horizontal micro LED are both positioned at the lower side of the light emitting layer; compared with a Micro LED in a horizontal structure, a Micro LED in a vertical structure has the following advantages: 1. the manufacturing process is similar to that of the traditional TFT-LCD, and partial machines and equipment can be used; 2. several techniques have been developed in the industry to control the leakage current of vertical structure micro leds.
In a display panel of a Micro LED with a vertical structure, an upper pixel electrode and a lower pixel electrode are required to be respectively arranged corresponding to an upper electrode and a lower electrode of the display panel to drive the display panel to work, wherein the upper pixel electrode is manufactured on a packaging substrate, the lower pixel electrode is manufactured on a driving substrate, then the packaging substrate and the driving substrate are assembled into a group to obtain the Micro LED display panel, and at the moment, when the packaging substrate and the driving substrate are assembled into the group, because the upper part of the Micro LED is uneven, namely the heights of all the Micro LEDs are not completely the same, the problem that part of the upper pixel electrode cannot be correctly attached to the upper electrode of the Micro LED, and the upper pixel electrode cannot be electrically connected to the upper electrode of the Micro LED easily occurs.
Disclosure of Invention
The present invention provides a bulk transfer structure for Micro LED display and a method for manufacturing the same, so as to solve the problem that the upper pixel electrode and the upper electrode of the Micro LED cannot be electrically connected as proposed in the background art.
In order to achieve the purpose, the invention provides the following technical scheme: a huge transfer structure for Micro LED display comprises a packaging substrate, a first Micro-LED crystal grain, an upper pixel electrode, a lower pixel electrode, a second Micro-LED crystal grain and a driving substrate, wherein the surface of the packaging substrate is provided with a plurality of upper grooves for accommodating the first Micro-LED crystal grain and the upper pixel electrode, and the first Micro-LED crystal grain is welded inside the upper grooves at a low temperature; the surface of the driving substrate is provided with a plurality of lower grooves for accommodating the lower pixel electrodes and the second Micro-LED crystal grains, and the second Micro-LED crystal grains are welded in the lower grooves at a low temperature; an elastic conductive layer is formed on the packaging substrate.
As a preferred technical scheme of the invention, the plurality of first Micro-LED crystal grains comprise three types, namely a first red light Micro-LED crystal grain emitting red light, a first green light Micro-LED crystal grain emitting green light and a first blue light Micro-LED crystal grain emitting blue light.
As a preferred technical scheme of the invention, the plurality of second Micro-LED crystal grains comprise three types, namely a second red light Micro-LED crystal grain emitting red light, a second green light Micro-LED crystal grain emitting green light and a second blue light Micro-LED crystal grain emitting blue light.
As a preferred embodiment of the present invention, the top surface of the first Micro-LED die is flush with the notch of the upper groove, and the top surface of the second Micro-LED die is flush with the notch of the lower groove.
As a preferred embodiment of the present invention, the lower groove is a "U" shaped groove, and a gap is left between the lower pixel electrode and an inner side surface of the lower groove.
As a preferred technical solution of the present invention, the upper pixel electrode has a "T" shaped structure, and a gap is left between the upper pixel electrode and an inner side surface of the upper groove.
The invention also discloses a manufacturing method of the huge transfer structure for the micro LED display, which comprises the following steps:
the method comprises the following steps: forming an upper groove on the surface of the packaging substrate, arranging an upper pixel electrode inside the upper groove, welding a first Micro-LED crystal grain inside the upper groove in a low-temperature welding mode, and forming an elastic conducting layer on the packaging substrate; a lower groove is formed in the surface of the driving substrate, a lower pixel electrode is arranged in the lower groove, and a second Micro-LED crystal grain is welded in the lower groove in a low-temperature welding mode;
step two: the packaging substrate and the driving substrate are paired to obtain the micro LED display panel, and the upper pixel electrode is electrically connected with the upper electrode of the micro LED through the elastic conducting layer.
Compared with the prior art, the invention has the beneficial effects that:
(1) the Micro-LED chip is prevented from being influenced by high-temperature welding through the combination of a low-temperature welding technology and vibration assembly, the production yield is improved, and the cost is low;
(2) when the packaging substrate and the driving substrate are assembled in a group, the electric connection between the upper pixel electrode and the upper electrode of the micro LED is realized through the elastic conducting layer, the height difference between the micro LEDs is filled by utilizing the elasticity of the elastic conducting layer, the poor connection between the upper pixel electrode and the upper electrode of the micro LED is avoided, and the assembling effect of the micro LED display panel and the process yield of the micro LED display panel are improved.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a flow chart of a method of manufacturing the present invention;
in the figure: 1. a package substrate; 2. a first Micro-LED die; 3. an elastic conductive layer; 4. an upper pixel electrode; 5. a lower pixel electrode; 6. a second Micro-LED die; 7. a drive substrate; 8. an upper groove; 9. a lower groove.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1 and fig. 2, the present invention provides a technical solution: a huge transfer structure for Micro LED display comprises a packaging substrate 1, a first Micro-LED crystal grain 2, an upper pixel electrode 4, a lower pixel electrode 5, a second Micro-LED crystal grain 6 and a driving substrate 7, wherein a plurality of upper grooves 8 for accommodating the first Micro-LED crystal grain 2 and the upper pixel electrode 4 are formed in the surface of the packaging substrate 1, the first Micro-LED crystal grain 2 falls into the upper grooves 8 under the action of vibration and electromagnetic force, the first Micro-LED crystal grain 2 is welded in the upper grooves 8 at a low temperature, and a low-temperature welding technology is adopted, so that the influence of high-temperature welding on the first Micro-LED crystal grain 2 can be avoided, the production yield is improved, and the cost is low; the surface of the driving substrate 7 is provided with a plurality of lower grooves 9 for accommodating the lower pixel electrodes 5 and the second Micro-LED grains 6, the second Micro-LED grains 6 fall into the lower grooves 9 under the action of vibration and electromagnetic force, and the second Micro-LED grains 6 are welded in the lower grooves 9 at low temperature; the elastic conducting layer 3 is formed on the packaging substrate 1, when the packaging substrate 1 and the driving substrate 7 are paired, the electric connection between the upper pixel electrode 4 and the upper electrode of the micro LED is realized through the elastic conducting layer 3, the height difference between the micro LEDs is filled by utilizing the elasticity of the elastic conducting layer 3, the poor connection between the upper pixel electrode 4 and the upper electrode of the micro LED is avoided, and the paired effect of the micro LED display panel and the process yield of the micro LED display panel are improved.
In this embodiment, preferably, the plurality of first Micro-LED dies 2 includes three types, which are a first red light emitting Micro-LED die emitting red light, a first green light emitting Micro-LED die emitting green light, and a first blue light emitting Micro-LED die emitting blue light.
In this embodiment, preferably, the plurality of second Micro-LED dies 6 includes three types, which are a second red light emitting Micro-LED die, a second green light emitting Micro-LED die, and a second blue light emitting Micro-LED die, respectively, emitting red light.
In this embodiment, it is preferred that the top surface of the first Micro-LED die 2 is flush with the notch of the upper groove 8 and the top surface of the second Micro-LED die 6 is flush with the notch of the lower groove 9.
In this embodiment, preferably, the lower groove 9 is a "U" shaped groove, and a gap is left between the lower pixel electrode 5 and the inner side surface of the lower groove 9, so as to facilitate quick installation of the lower pixel electrode 5.
In this embodiment, preferably, the upper pixel electrode 4 is in a "T" shape, and a gap is left between the upper pixel electrode 4 and the inner side surface of the upper groove 8, so as to facilitate quick installation of the upper pixel electrode 4.
The electromagnet corresponding to the designated area of the electromagnet base station is electrified, and the electromagnet base station is controlled to vibrate so as to drive the chamber to vibrate, so that the Micro-LED crystal grains put into the chamber fall into the corresponding grooves of the designated area under the action of vibration and electromagnetic force
A method of fabricating a bulk transfer structure for a micro led display, comprising the steps of:
the method comprises the following steps: an upper groove 8 is formed in the surface of the packaging substrate 1, an upper pixel electrode 4 is arranged inside the upper groove 8, the first Micro-LED crystal grain 2 is welded inside the upper groove 8 in a low-temperature welding mode, and an elastic conducting layer 3 is formed on the packaging substrate 1; a lower groove 9 is formed in the surface of the driving substrate 7, a lower pixel electrode 5 is arranged inside the lower groove 9, and a second Micro-LED crystal grain 6 is welded inside the lower groove 9 in a low-temperature welding mode;
step two: packaging substrate 1 and drive substrate 7 are to the group and are obtained Micro LED display panel, realize going up pixel electrode 4 and Micro LED's last electrode's electric connection through elastic conductive layer 3, utilize elastic conductive layer 3's elasticity to fill up the difference in height between each Micro LED, avoid going up pixel electrode 4 and Micro LED's last electrode be connected badly, promote Micro LED display panel to the group effect and Micro LED display panel's processing procedure yield.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (7)
1. A bulk transfer structure for a micro led display, comprising: the LED packaging structure comprises a packaging substrate (1), a first Micro-LED crystal grain (2), an upper pixel electrode (4), a lower pixel electrode (5), a second Micro-LED crystal grain (6) and a driving substrate (7), wherein the surface of the packaging substrate (1) is provided with a plurality of upper grooves (8) for accommodating the first Micro-LED crystal grain (2) and the upper pixel electrode (4), and the first Micro-LED crystal grain (2) is welded inside the upper grooves (8) at a low temperature; the surface of the driving substrate (7) is provided with a plurality of lower grooves (9) for accommodating the lower pixel electrodes (5) and the second Micro-LED crystal grains (6), and the second Micro-LED crystal grains (6) are welded in the lower grooves (9) at a low temperature; an elastic conductive layer (3) is formed on the packaging substrate (1).
2. A bulk transfer structure for a micro led display according to claim 1, wherein: the first Micro-LED crystal grains (2) comprise three types, namely a first red light Micro-LED crystal grain emitting red light, a first green light Micro-LED crystal grain emitting green light and a first blue light Micro-LED crystal grain emitting blue light.
3. A bulk transfer structure for a micro led display according to claim 1, wherein: the second Micro-LED crystal grains (6) comprise three types, namely a second red light Micro-LED crystal grain emitting red light, a second green light Micro-LED crystal grain emitting green light and a second blue light Micro-LED crystal grain emitting blue light.
4. A bulk transfer structure for a micro led display according to claim 1, wherein: the top surface of the first Micro-LED crystal grain (2) is flush with the notch of the upper groove (8), and the top surface of the second Micro-LED crystal grain (6) is flush with the notch of the lower groove (9).
5. A bulk transfer structure for a MicroLED display according to claim 4, wherein: the lower groove (9) is a U-shaped groove, and a gap is reserved between the lower pixel electrode (5) and the inner side surface of the lower groove (9).
6. A bulk transfer structure for a MicroLED display according to claim 4, wherein: the upper pixel electrode (4) is of a T-shaped structure, and a gap is reserved between the upper pixel electrode (4) and the inner side face of the upper groove (8).
7. A method of fabricating a bulk transfer structure for a MicroLED display according to any of claims 1 to 6, wherein: the manufacturing method comprises the following steps:
the method comprises the following steps: an upper groove (8) is formed in the surface of a packaging substrate (1), an upper pixel electrode (4) is arranged inside the upper groove (8), a first Micro-LED crystal grain (2) is welded inside the upper groove (8) in a low-temperature welding mode, and an elastic conducting layer (3) is formed on the packaging substrate (1); a lower groove (9) is formed in the surface of the driving substrate (7), a lower pixel electrode (5) is arranged inside the lower groove (9), and a second Micro-LED crystal grain (6) is welded inside the lower groove (9) in a low-temperature welding mode;
step two: the packaging substrate (1) and the driving substrate (7) are paired to obtain the micro LED display panel, and the upper pixel electrode (4) is electrically connected with the upper electrode of the micro LED through the elastic conducting layer (3).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110845895.9A CN113437108A (en) | 2021-07-26 | 2021-07-26 | Mass transfer structure for micro LED display and manufacturing method |
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| CN202110845895.9A CN113437108A (en) | 2021-07-26 | 2021-07-26 | Mass transfer structure for micro LED display and manufacturing method |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493154A (en) * | 2018-04-28 | 2018-09-04 | 深圳市华星光电技术有限公司 | The production method and Micro LED display panels of Micro LED display panels |
| CN109065677A (en) * | 2018-08-17 | 2018-12-21 | 京东方科技集团股份有限公司 | Micro-LED flood tide transfer method and Micro-LED substrate |
| CN110047785A (en) * | 2019-04-24 | 2019-07-23 | 京东方科技集团股份有限公司 | Micro LED flood tide transfer method and its encapsulating structure, display device |
| CN112652617A (en) * | 2020-12-22 | 2021-04-13 | 中国电子科技集团公司第五十五研究所 | Preparation method of novel Micro-LED display device |
-
2021
- 2021-07-26 CN CN202110845895.9A patent/CN113437108A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493154A (en) * | 2018-04-28 | 2018-09-04 | 深圳市华星光电技术有限公司 | The production method and Micro LED display panels of Micro LED display panels |
| CN109065677A (en) * | 2018-08-17 | 2018-12-21 | 京东方科技集团股份有限公司 | Micro-LED flood tide transfer method and Micro-LED substrate |
| CN110047785A (en) * | 2019-04-24 | 2019-07-23 | 京东方科技集团股份有限公司 | Micro LED flood tide transfer method and its encapsulating structure, display device |
| CN112652617A (en) * | 2020-12-22 | 2021-04-13 | 中国电子科技集团公司第五十五研究所 | Preparation method of novel Micro-LED display device |
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