CN113436990A - Plasma etching machine capable of automatically cleaning etching reactants - Google Patents
Plasma etching machine capable of automatically cleaning etching reactants Download PDFInfo
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- CN113436990A CN113436990A CN202110559886.3A CN202110559886A CN113436990A CN 113436990 A CN113436990 A CN 113436990A CN 202110559886 A CN202110559886 A CN 202110559886A CN 113436990 A CN113436990 A CN 113436990A
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- 239000000376 reactant Substances 0.000 title claims abstract description 26
- 238000005530 etching Methods 0.000 title claims abstract description 18
- 238000001020 plasma etching Methods 0.000 title claims abstract description 9
- 238000004140 cleaning Methods 0.000 title abstract description 15
- 230000007246 mechanism Effects 0.000 claims abstract description 39
- 238000009434 installation Methods 0.000 claims abstract description 28
- 230000005540 biological transmission Effects 0.000 claims description 42
- 239000007789 gas Substances 0.000 claims description 20
- 239000012495 reaction gas Substances 0.000 claims description 10
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 6
- 239000007921 spray Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 description 43
- 238000006243 chemical reaction Methods 0.000 description 22
- 230000009471 action Effects 0.000 description 6
- 230000033001 locomotion Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000012265 solid product Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
- B08B1/12—Brushes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/02—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by distortion, beating, or vibration of the surface to be cleaned
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a plasma etching machine capable of automatically cleaning etching reactants, which comprises an outer frame and a clamping frame, wherein the upper surface of the clamping frame is fixedly connected with a slide block frame, a slide block is connected in the slide block frame in a sliding manner, a clamping mechanism for clamping a wafer is arranged in the clamping frame, the top of the outer frame is fixedly connected with a motor, an output shaft of the motor penetrates through the outer frame and is fixedly connected with an installation shaft, the bottom of the installation shaft penetrates through and is fixedly connected with an inclined cylinder, a spring block is connected to the inner side of the bottom of the installation shaft through a spline, the spring block penetrates through the bottom surface of the installation shaft and is fixedly connected with the slide block, a vibration mechanism for vibrating the wafer is arranged on the clamping frame, the vibration mechanism comprises a base and a fourth spring, the fourth spring is sleeved on the surface of the spring block, and the fourth spring is positioned between the spring block and the inner bottom surface of the installation shaft. The vibration effect generated when the surface reactant is initially removed is obvious, so that the subsequent removal efficiency is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor chip manufacturing, in particular to a plasma etcher capable of automatically cleaning etching reactants.
Background
Plasma etchers, also known as plasma etchers, plasma plane etchers, plasma surface treatment instruments, plasma cleaning systems, and the like; the plasma etching is a device for etching an object to be etched through chemical reaction caused by plasma and physical reaction generated by bombardment, and is the most common form in dry etching; the wafer refers to a silicon chip used for manufacturing a silicon semiconductor integrated circuit, the wafer is a carrier used for producing the integrated circuit, and the wafer generally refers to a monocrystalline silicon wafer. Wafers are the most commonly used semiconductor materials, and are classified into 4 inch, 5 inch, 6 inch, 8 inch, etc. specifications by their diameters, and the first fixed block (12) inch and even larger specifications are recently developed. The larger the wafer is, the more ICs can be produced on the same wafer, so that the cost can be reduced; but the requirements on material technology and production technology are higher, such as problems of uniformity and the like.
The prior art discloses a semiconductor chip plasma etching machine with a patent number of CN108682637B, which comprises a box body, a vibration device, a rotating device, a clamping device, a heater, a suction device, an exciting coil, an air supply device and a bias voltage supply device, wherein the bias voltage supply device is used for applying bias voltage to a wafer; the vibration device is used for vibrating the wafer; the rotating device drives the wafer to rotate through the clamping device; the suction device is used for removing reaction products on the reaction surface of the wafer; the exciting coil is used for ionizing the reaction gas; the gas supply device is used for conveying reaction gas and then uniformly spraying the reaction gas.
The invention realizes that the reaction surface of the wafer is uniformly bombarded by ions by arranging the rotating device, thereby improving the processing quality of the wafer; through setting up the removal board, realized getting rid of the reaction product that wafer reaction surface produced, and then improve reaction efficiency, nevertheless when the reactant produced, produced vibration effect was showing inadequately when tentatively cleaing away surface reactant, makes subsequent clear away efficiency reduce, has influenced the processing of wafer.
Disclosure of Invention
The invention aims to provide a plasma etcher capable of automatically cleaning etching reactants, which has the advantages of obvious vibration effect generated when the surface reactants are initially cleaned, improved subsequent cleaning efficiency and capability of solving the problems in the background technology.
In order to achieve the purpose, the invention provides the following technical scheme: the utility model provides a plasma etching machine that can clear up sculpture reactant automatically, includes frame and the tight frame of clamp, fixed surface is connected with the slider frame on the tight frame of clamp, sliding connection has the slider in the slider frame, be equipped with the tight clamping mechanism of messenger's wafer clamp in the tight frame of clamp, the top fixedly connected with motor of frame, the output shaft of motor passes frame and fixedly connected with installation axle, the bottom of installation axle passes and the oblique cylinder of fixedly connected with, the inboard splined connection in bottom of installation axle has the spring block, the spring block pass installation axle bottom surface and with slider fixed connection, be equipped with the vibrating mechanism who makes the wafer vibration on the tight frame of clamp.
The vibration mechanism comprises a base and a fourth spring, the fourth spring is sleeved on the surface of the spring block and is positioned between the spring block and the inner bottom surface of the installation shaft, the base is fixedly arranged at the inner bottom of the outer frame, a spring groove is formed in the base close to the right side, a supporting rod is slidably arranged in the spring groove through the first spring, the top of the supporting rod is fixedly connected with a supporting rod head, the supporting rod head is contacted with the bottom surface of the inclined cylinder, the surface of the supporting rod close to the middle part is fixedly connected with a second fixed block, a cross rod is slidably connected in the second fixed block, the left end of the cross rod is fixedly connected with a slide rod, a second spring is sleeved on the surface of the cross rod between the slide rod and the second fixed block, a circular slide rail is fixedly connected with the upper surface of the clamping frame, the bottom of the slide rod extends into the circular slide rail and is slidably connected with the circular slide rail, and an eccentric wheel is fixedly connected with the surface of the installation shaft, the eccentric wheel is in contact with the sliding rod.
Preferably, the clamping mechanism comprises two clamping rods, the two clamping rods are slidably connected inside two sides of the clamping frame, the two clamping blocks are fixedly connected to opposite surfaces of the clamping rods, and a third spring is sleeved on the outer wall of each clamping rod between each clamping block and the inner wall of the clamping frame.
Preferably, the air injection mechanism comprises a transmission shaft and a circular ring, the transmission shaft is rotatably connected to the upper surface of the base through a rotating shaft, the circular ring is arranged on the inner side of the transmission shaft, the lower surface of the circular ring is rotatably connected with a plurality of arc-shaped blocks through pin shafts, arc-shaped pull rods are connected between the arc-shaped blocks and the inner wall of the transmission shaft, the arc-shaped blocks are cavities, the upper surfaces of the arc-shaped blocks are provided with a plurality of air outlet holes, the lower surfaces of the arc-shaped blocks are fixedly provided with air inlet pipes, and an air supply device for supplying reaction gas to the air inlet pipes is arranged in the base; and the outer wall of the transmission shaft is provided with a rotating mechanism which enables the air outlet holes to uniformly spray air to the surface of the wafer.
Preferably, slewing mechanism includes first fixed block and belt, first fixed block fixed mounting is at frame right side inner wall, first fixed block upper surface rotates through the bearing and is connected with the transfer line, be connected through belt drive between transfer line and the transmission shaft, transfer line upper end surface is equipped with the teeth of a cogwheel, the gear groove has been seted up on the right-hand member surface of horizontal pole, gear groove and teeth of a cogwheel gear connection.
Preferably, the arc piece surface is equipped with the clearing device who clears up the sculpture reactant, clearing device includes the arc strip, arc strip fixed connection is on arc piece surface, the arc strip surface is equipped with the brush hair.
Preferably, the height of the gear teeth is greater than the height difference of the inclined planes of the inclined cylinders.
Preferably, the lower surface of the clamping frame is provided with a groove for air to enter.
Compared with the prior art, the invention has the following beneficial effects:
the invention has the advantages that through the arrangement of the eccentric wheel and the sliding rod, the upper surface of the clamping frame is connected with the circular sliding rail, the sliding rod is connected in the circular sliding rail in a sliding manner and is matched with the contact between the eccentric wheel and the sliding rod, so that when the eccentric wheel rotates to push the sliding rod to move rightwards, the sliding block is matched with the limit sliding of the sliding block in the sliding block frame, the sliding rod can drive the circular sliding rail and the clamping frame fixedly connected with the circular sliding rail to move rightwards, the transverse rod moves rightwards at the moment, the second spring is compressed, when the eccentric wheel rotates to be out of contact with the sliding rod, the second spring does not have the extrusion of external force, the reset trend is generated, the sliding rod moves leftwards at the moment, the circular sliding rail and the clamping frame are driven to move leftwards, the left-right shaking of the clamping frame is realized, in addition, the rotation of the installation shaft is realized, the sliding block drives the sliding block frame to rotate, and the rotation of the clamping frame is realized; meanwhile, the supporting rod head above the supporting rod moves up and down along with the rotation of the inclined cylinder, specifically, when the supporting rod head is pressed down, the first spring at the bottom of the supporting rod is compressed, the second fixing block on the surface of the supporting rod can drive the cross rod, the sliding rod and the clamping frame to move downwards at the moment, the supporting rod head does not have external force for pressing down, the trend of resetting the first spring can drive the supporting rod to slide in the spring groove to move upwards at the moment, namely the clamping frame moves upwards, the vibration of the clamping frame is realized, solid products on the reaction surface of the wafer fall off through vibration, the effect of preliminarily removing reactants is better, and the subsequent removing efficiency is improved.
Secondly, the arc-shaped pull rod and the transmission shaft are arranged, and the action of the rotating mechanism is matched, so that when the transmission shaft rotates, the arc-shaped block is connected to the bottom of the circular ring in a rotating mode through the pin shaft, when the arc-shaped pull rod rotates along with the transmission shaft, the arc-shaped block hinged to the arc-shaped block can be pulled to be opened outwards or closed inwards, the position of gas sprayed out of the gas outlet hole formed in the arc-shaped block is changed continuously, and the problem that the ionized ions impact the local area of the wafer too intensively to cause uneven etching layer on the reaction surface and affect the processing quality of the wafer is effectively avoided.
The invention further discloses a cleaning device for the wafer, which comprises a clamping frame, a wafer reaction surface, bristles, a circular ring, a brush head and a brush head, wherein the clamping frame is arranged on the arc-shaped block, the arc-shaped block is fixedly connected with the arc-shaped block, the brush head is continuously contacted with the wafer reaction surface in the clamping frame due to the vibration, especially the vertical motion, of the clamping frame, etching reactants on the reaction surface are removed, and meanwhile, the brush head is continuously contacted with the bottom of the circular ring back and forth, so that the self-cleaning of the brush head is realized, and the cleaning effect is further improved.
Drawings
FIG. 1 is a schematic cross-sectional front view of the present invention;
FIG. 2 is a partially enlarged schematic view of the clamping mechanism of the present invention;
FIG. 3 is a schematic top view of the air injection mechanism of the present invention;
FIG. 4 is a partially enlarged view of the rotating mechanism of the present invention;
FIG. 5 is a schematic top view of the cleaning mechanism of the present invention;
FIG. 6 is a schematic view of a partially enlarged structure of the cleaning device of the present invention.
In the figure: 1. a motor; 2. an outer frame; 4. an oblique cylinder; 5. installing a shaft; 6. an eccentric wheel; 7. clamping the frame; 8. a drive shaft; 9. a base; 10. a first spring; 11. a spring slot; 12. a first fixed block; 13. a belt; 14. a circular ring; 15. a support rod; 16. a club head is propped; 17. an arc-shaped block; 18. an arc-shaped pull rod; 19. an air outlet; 20. an arc-shaped strip; 21. brushing; 22. a spring block; 23. a slide bar; 24. a circular slide rail; 25. a second spring; 27. a second fixed block; 28. a gear groove; 29. a cross bar; 30. gear teeth; 31. a transmission rod; 32. a clamping lever; 33. a third spring; 34. a clamping block; 35. a fourth spring; 36. a slider frame; 37. a slider; 38. an air inlet pipe.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1 to 6, the present invention provides a technical solution: the utility model provides a can clear up plasma etching machine of sculpture reactant automatically, including frame 2 and clamping frame 7, fixed surface is connected with slider frame 36 on the clamping frame 7, sliding connection has slider 37 in the slider frame 36, be equipped with the tight clamping mechanism of messenger's wafer clamp in the clamping frame 7, the top fixedly connected with motor 1 of frame 2, the output shaft of motor 1 passes frame 2 and fixedly connected with installation axle 5, the bottom of installation axle 5 passes and the oblique cylinder 4 of fixedly connected with, the inboard splined connection in bottom of installation axle 5 has spring block 22, spring block 22 pass installation axle 5 bottom surface and with slider 37 fixed connection, be equipped with the vibrating mechanism who makes the wafer vibration on the clamping frame 7.
The vibrating mechanism comprises a base 9 and a fourth spring 35, the fourth spring 35 is sleeved on the surface of a spring block 22, the fourth spring 35 is positioned between the spring block 22 and the inner bottom surface of the mounting shaft 5, the base 9 is fixedly mounted at the inner bottom of the outer frame 2, a spring groove 11 is formed in the base 9 close to the right side, a supporting rod 15 is slidably mounted in the spring groove 11 through a first spring 10, the top of the supporting rod 15 is fixedly connected with a supporting rod head 16, the supporting rod head 16 is contacted with the bottom surface of the inclined cylinder 4, the surface of the supporting rod 15 close to the middle is fixedly connected with a second fixed block 27, a cross rod 29 is slidably connected in the second fixed block 27, the left end of the cross rod 29 is fixedly connected with a sliding rod 23, the surface of the cross rod 29 between the sliding rod 23 and the second fixed block 27 is sleeved with a second spring 25, the upper surface of the clamping frame 7 is fixedly connected with a circular sliding rail 24, and the bottom of the sliding rod 23 extends into and is slidably connected with the circular sliding rail 24, the surface of the mounting shaft 5 is fixedly connected with an eccentric wheel 6, and the eccentric wheel 6 is in contact with a slide bar 23.
Put into clamping mechanism with the wafer and press from both sides tightly, start jet mechanism and motor 1, motor 1 drives installation axle 5 and oblique cylinder 4 through the output shaft and rotates, and the spline is connected with spring block 22 in the installation axle 5, and spring block 22 bottom fixed connection is the slider 37, so installation axle 5 rotates and to drive slider 37 and rotate, and slider 37 sliding connection is in slider frame 36, and then makes slider frame 36 take clamping frame 7 to rotate, just also takes the wafer in clamping mechanism and the clamping mechanism to rotate.
Through the arrangement of the eccentric wheel 6 and the slide rod 23, the upper surface of the clamping frame 7 is connected with a circular slide rail 24, the slide rod 23 is connected in the circular slide rail 24 in a sliding way, and the eccentric wheel 6 is matched with the contact of the slide rod 23, so that when the eccentric wheel 6 rotates to push the slide rod 23 to move to the right, and in cooperation with the limited sliding of the slide block 37 in the slide block frame 36, the slide rod 23 will bring the circular slide rail 24 and the clamping frame 7 fixedly connected with the circular slide rail 24 to move to the right, at this time, the cross rod 29 moves to the right, the second spring 25 is compressed, when the eccentric wheel 6 rotates to be not contacted with the slide bar 23, the second spring 25 is not extruded by external force, and a reset trend is generated, at this time, the slide bar 23 moves leftwards, the circular slide rail 24 and the clamping frame 7 are driven to move leftwards, therefore, the clamping frame 7 swings left and right, and the sliding block 37 drives the sliding block frame 36 to rotate in addition to the rotation of the mounting shaft 5, so that the clamping frame 7 rotates; meanwhile, a supporting rod head 16 above the supporting rod 15 moves up and down along with the rotation of the inclined cylinder 4, specifically, when the supporting rod head 16 is pressed down, a first spring 10 at the bottom of the supporting rod 15 is compressed, at the moment, a second fixed block 27 on the surface of the supporting rod 15 drives a cross rod 29, a sliding rod 23 and a clamping frame 7 to move down, when the supporting rod head 16 has no external force for pressing down, the trend of resetting the first spring 10 drives the supporting rod 15 to slide in a spring groove 11 to move up, namely the clamping frame 7 moves up, so that the vibration of the clamping frame 7 is realized, solid products on the reaction surface of the wafer fall off through vibration, the effect of primarily removing reactants is better, and the subsequent removing efficiency is improved.
Further, clamping mechanism includes two clamping rods 32, inside two clamping rods 32 sliding connection pressed from both sides tight frame 7 both sides, equal fixedly connected with presss from both sides tight piece 34 on the opposite face of two clamping rods 32, press from both sides tight piece 34 and press from both sides the tight frame 7 between the tight frame 7 inner wall clamping rod 32 outer wall cover and be equipped with third spring 33, through the third spring 33 that sets up, strut two and press from both sides tight piece 34, put into two and press from both sides between the tight piece 34 with the wafer, because the elastic action of two third springs 33, can make firm the clamp of wafer press from both sides tight frame 7 inside.
Further, the air injection mechanism comprises a transmission shaft 8 and a circular ring 14, the transmission shaft 8 is rotatably connected to the upper surface of the base 9 through a rotating shaft, the circular ring 14 is arranged on the inner side of the transmission shaft 8, the lower surface of the circular ring 14 is rotatably connected with a plurality of arc-shaped blocks 17 through pin shafts, arc-shaped pull rods 18 are connected between the arc-shaped blocks 17 and the inner wall of the transmission shaft 8, the arc-shaped blocks 17 are hollow cavities, a plurality of air outlet holes 19 are formed in the upper surfaces of the arc-shaped blocks 17, an air inlet pipe 38 is fixedly arranged on the lower surface of the arc-shaped blocks 17, and an air supply device for supplying reaction gas to the air inlet pipe 38 is arranged in the base 9; the outer wall of the transmission shaft 8 is provided with a rotating mechanism which enables the air outlet holes 19 to uniformly spray air to the surface of the wafer.
The gas supply device is opened, the reaction gas enters the arc-shaped block 17 through the gas inlet pipe 38 and is sprayed out from the gas outlet 19 on the surface of the arc-shaped block 17 through the cavity in the arc-shaped block 17, so that the reaction gas can be ionized through the exciting coil and bombarded on the reaction surface of the wafer under the action of the bias voltage supply device, through the arc pull rod 18 and the transmission shaft 8, and the action of the rotating mechanism, when the transmission shaft 8 rotates, because the arc block 17 is rotatably connected with the bottom of the circular ring 14 through the pin shaft, therefore, when the arc-shaped pull rod 18 rotates along with the transmission shaft 8, the hinged arc-shaped block 17 can be pulled to be opened outwards or closed inwards, so that the position of gas sprayed out from the gas outlet 19 formed in the arc-shaped block 17 is changed continuously, and the phenomenon that ionized ions bombard the local area of the wafer too intensively to cause the uneven etching layer on the reaction surface and influence the processing quality of the wafer is effectively avoided.
Further, slewing mechanism includes first fixed block 12 and belt 13, and first fixed block 12 fixed mounting is at frame 2 right side inner wall, and first fixed block 12 upper surface is connected with transfer line 31 through the bearing rotation, is connected through belt 13 transmission between transfer line 31 and the transmission shaft 8, and transfer line 31 upper end surface is equipped with teeth of a cogwheel 30, and gear groove 28 has been seted up on the right-hand member surface of horizontal pole 29, and gear groove 28 and the gear connection of teeth of a cogwheel 30.
Through the gear groove 28, when the sliding rod 23 moves, the gear teeth 30 on the upper portion of the transmission rod 31 are engaged with the gear along with the movement of the gear groove 28, that is, the gear teeth 30 drive the transmission rod 31 to rotate, and the sliding rod 23 continuously moves left and right, so that the gear groove 28 drives the gear teeth 30 to continuously reciprocate, the transmission rod 31 realizes reciprocating rotation, that is, the transmission rod 31 drives the transmission shaft 8 to continuously reciprocate through the belt 13, and the positions of the arc-shaped block 17 and the air outlet 19 are continuously changed.
Further, arc block 17 surface is equipped with the clearing device who clears up the sculpture reactant, and clearing device includes arc strip 20, and arc strip 20 fixed connection is on arc block 17 surface, and arc strip 20 surface is equipped with brush hair 21.
Through the brush hair 21 that sets up, make arc block 17 when constantly moving, fixed connection's brush hair 21 can constantly move on the arc strip 20, because the vibration of pressing from both sides tight frame 7, especially up-and-down motion can constantly make brush hair 21 and press from both sides the contact of the wafer reaction surface in the tight frame 7 of clamp, clear away the etching reactant on the reaction surface, brush hair 21 constantly makes a round trip to contact with ring 14 bottom simultaneously, has realized the self-cleaning of brush hair 21 to further improve clean effect.
Further, the height of the gear teeth 30 is greater than the height difference of the inclined surfaces of the inclined cylinders 4, and the gear teeth 30 are arranged, so that when the club head 16 is pressed down by the inclined cylinders 4, the gear teeth 30 can still be in contact with the gear grooves 28, the transmission rod 31 can continuously rotate in a reciprocating mode, and the air injection and cleaning processes are uninterrupted.
Furthermore, the lower surface of the clamping frame 7 is provided with a groove for gas to enter, and the gas sprayed out of the transmission shaft 8 can contact with the wafer reaction surface through the arranged groove, so that the reaction can be normally carried out.
The working principle is as follows: when the plasma etching machine operates, a wafer is placed into the clamping mechanism to be clamped, the air injection mechanism and the motor 1 are started, the motor 1 drives the installation shaft 5 and the inclined cylinder 4 to rotate through the output shaft, the spring block 22 is connected to the spline in the installation shaft 5, the sliding block 37 is fixedly connected to the bottom of the spring block 22, the sliding block 37 can be driven to rotate by the rotation of the installation shaft 5, the sliding block 37 is connected in the sliding block frame 36 in a sliding mode, and then the sliding block frame 36 is driven to rotate the clamping frame 7, namely, the wafer in the clamping mechanism and the clamping mechanism is driven to rotate.
Through the arrangement of the eccentric wheel 6 and the slide rod 23, the upper surface of the clamping frame 7 is connected with a circular slide rail 24, the slide rod 23 is connected in the circular slide rail 24 in a sliding way, and the eccentric wheel 6 is matched with the contact of the slide rod 23, so that when the eccentric wheel 6 rotates to push the slide rod 23 to move to the right, and in cooperation with the limited sliding of the slide block 37 in the slide block frame 36, the slide rod 23 will bring the circular slide rail 24 and the clamping frame 7 fixedly connected with the circular slide rail 24 to move to the right, at this time, the cross rod 29 moves to the right, the second spring 25 is compressed, when the eccentric wheel 6 rotates to be not contacted with the slide bar 23, the second spring 25 is not extruded by external force, and a reset trend is generated, at this time, the slide bar 23 moves leftwards, the circular slide rail 24 and the clamping frame 7 are driven to move leftwards, therefore, the clamping frame 7 swings left and right, and the sliding block 37 drives the sliding block frame 36 to rotate in addition to the rotation of the mounting shaft 5, so that the clamping frame 7 rotates; meanwhile, the abutting rod head 16 above the abutting rod 15 moves up and down along with the rotation of the inclined cylinder 4, specifically, when the abutting rod head 16 is pressed down, the first spring 10 at the bottom of the abutting rod 15 is compressed, at this time, the second fixed block 27 on the surface of the abutting rod 15 can drive the cross rod 29, the sliding rod 23 and the clamping frame 7 to move down, when the abutting rod head 16 has no external force of pressing down, the tendency of resetting of the first spring 10 can drive the abutting rod 15 to slide in the spring groove 11 to move up, that is, the clamping frame 7 moves up, and the vibration of the clamping frame 7 is realized.
The gas supply device is opened, the reaction gas enters the arc-shaped block 17 through the gas inlet pipe 38 and is sprayed out from the gas outlet 19 on the surface of the arc-shaped block 17 through the cavity in the arc-shaped block 17, so that the reaction gas can be ionized through the exciting coil and bombarded on the reaction surface of the wafer under the action of the bias voltage supply device, through the arc pull rod 18 and the transmission shaft 8, and the action of the rotating mechanism, when the transmission shaft 8 rotates, because the arc block 17 is rotatably connected with the bottom of the circular ring 14 through the pin shaft, therefore, when the arc-shaped pull rod 18 rotates along with the transmission shaft 8, the hinged arc-shaped block 17 can be pulled to be opened outwards or closed inwards, so that the position of gas sprayed out from the gas outlet 19 formed in the arc-shaped block 17 is changed continuously, and the phenomenon that ionized ions bombard the local area of the wafer too intensively to cause the uneven etching layer on the reaction surface and influence the processing quality of the wafer is effectively avoided.
Through the gear groove 28, when the sliding rod 23 moves, the gear teeth 30 on the upper portion of the transmission rod 31 are engaged with the gear along with the movement of the gear groove 28, that is, the gear teeth 30 drive the transmission rod 31 to rotate, and the sliding rod 23 continuously moves left and right, so that the gear groove 28 drives the gear teeth 30 to continuously reciprocate, the transmission rod 31 realizes reciprocating rotation, that is, the transmission rod 31 drives the transmission shaft 8 to continuously reciprocate through the belt 13, and the positions of the arc-shaped block 17 and the air outlet 19 are continuously changed.
Through the brush hair 21 that sets up, make arc block 17 when constantly moving, fixed connection's brush hair 21 can constantly move on the arc strip 20, because the vibration of pressing from both sides tight frame 7, especially up-and-down motion can constantly make brush hair 21 and press from both sides the contact of the wafer reaction surface in the tight frame 7 of clamp, clear away the etching reactant on the reaction surface, brush hair 21 constantly makes a round trip to contact with ring 14 bottom simultaneously, has realized the self-cleaning of brush hair 21 to further improve clean effect.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (7)
1. The utility model provides a can clear up plasma etching machine of sculpture reactant automatically, includes frame (2) and presss from both sides tight frame (7), its characterized in that: the upper surface of the clamping frame (7) is fixedly connected with a sliding block frame (36), a sliding block (37) is connected in the sliding block frame (36) in a sliding manner, a clamping mechanism for clamping a wafer is arranged in the clamping frame (7), the top of the outer frame (2) is fixedly connected with a motor (1), an output shaft of the motor (1) penetrates through the outer frame (2) and is fixedly connected with an installation shaft (5), the bottom of the installation shaft (5) penetrates through and is fixedly connected with an inclined cylinder (4), a spring block (22) is connected to the inner side of the bottom of the installation shaft (5) in a spline manner, the spring block (22) penetrates through the bottom surface of the installation shaft (5) and is fixedly connected with the sliding block (37), and a vibration mechanism for vibrating the wafer is arranged on the clamping frame (7);
the vibrating mechanism comprises a base (9) and a fourth spring (35), the fourth spring (35) is sleeved on the surface of a spring block (22), the fourth spring (35) is located between the inner bottom surfaces of the spring block (22) and an installation shaft (5), the base (9) is fixedly installed at the inner bottom of an outer frame (2), a spring groove (11) is formed in the base (9) close to the right side, a supporting rod (15) is installed inside the spring groove (11) in a sliding mode through a first spring (10), the top of the supporting rod (15) is fixedly connected with a supporting rod head (16), the supporting rod head (16) is contacted with the bottom surface of an inclined cylinder (4), the surface of the supporting rod (15) close to the middle is fixedly connected with a second fixed block (27), a cross rod (29) is connected with the second fixed block (27) in a sliding mode, and a sliding rod (23) is fixedly connected with the left end of the cross rod (29), horizontal pole (29) surface cover between slide bar (23) and second fixed block (27) is equipped with second spring (25), press from both sides fixed surface and be connected with circular slide rail (24) on tight frame (7), slide bar (23) bottom extends to inside and rather than sliding connection of circular slide rail (24), installation axle (5) fixed surface is connected with eccentric wheel (6), eccentric wheel (6) and slide bar (23) contact.
2. The plasma etcher of claim 1, wherein the plasma etcher is configured to automatically clean the etching reactants: clamping mechanism includes two clamp rod (32), two inside clamp rod (32) sliding connection is in pressing from both sides tight frame (7) both sides, two equal fixedly connected with presss from both sides tight piece (34) on the opposite face of clamp rod (32), press from both sides tight piece (34) and press from both sides tight frame (7) between the tight frame (7) inner wall clamp rod (32) outer wall cover and be equipped with third spring (33).
3. The plasma etcher of claim 1, wherein the plasma etcher is configured to automatically clean the etching reactants: the gas injection mechanism comprises a transmission shaft (8) and a circular ring (14), the transmission shaft (8) is rotatably connected to the upper surface of the base (9) through a rotating shaft, the circular ring (14) is arranged on the inner side of the transmission shaft (8), the lower surface of the circular ring (14) is rotatably connected with a plurality of arc-shaped blocks (17) through pin shafts, arc-shaped pull rods (18) are connected between the arc-shaped blocks (17) and the inner wall of the transmission shaft (8), a cavity is formed in each arc-shaped block (17), a plurality of gas outlet holes (19) are formed in the upper surface of each arc-shaped block, a gas inlet pipe (38) is fixedly arranged on the lower surface of each arc-shaped block (17), and a gas supply device for conveying reaction gas to the gas inlet pipe (38) is arranged in the base (9); and the outer wall of the transmission shaft (8) is provided with a rotating mechanism which enables the air outlet holes (19) to uniformly spray air to the surface of the wafer.
4. A plasma etcher as defined in claim 3, wherein the plasma etcher is adapted to automatically clean the etching reactants, the plasma etcher comprising: slewing mechanism includes first fixed block (12) and belt (13), first fixed block (12) fixed mounting is at frame (2) right side inner wall, first fixed block (12) upper surface is rotated through the bearing and is connected with transfer line (31), be connected through belt (13) transmission between transfer line (31) and transmission shaft (8), transfer line (31) upper end surface is equipped with teeth of a cogwheel (30), gear groove (28) have been seted up on the right-hand member surface of horizontal pole (29), gear groove (28) and teeth of a cogwheel (30) gear connection.
5. A plasma etcher as defined in claim 3, wherein the plasma etcher is adapted to automatically clean the etching reactants, the plasma etcher comprising: arc piece (17) surface is equipped with the clearing device who clears up the sculpture reactant, clearing device includes arc strip (20), arc strip (20) fixed connection is on arc piece (17) surface, arc strip (20) surface is equipped with brush hair (21).
6. The plasma etcher of claim 4, wherein the plasma etcher is configured to automatically clean the etching reactants: the height of the gear teeth (30) is greater than the height difference of the inclined surfaces of the inclined cylinders (4).
7. The plasma etcher of claim 1, wherein the plasma etcher is configured to automatically clean the etching reactants: the lower surface of the clamping frame (7) is provided with a groove for air to enter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110559886.3A CN113436990A (en) | 2021-05-21 | 2021-05-21 | Plasma etching machine capable of automatically cleaning etching reactants |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110559886.3A CN113436990A (en) | 2021-05-21 | 2021-05-21 | Plasma etching machine capable of automatically cleaning etching reactants |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113436990A true CN113436990A (en) | 2021-09-24 |
Family
ID=77802704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110559886.3A Withdrawn CN113436990A (en) | 2021-05-21 | 2021-05-21 | Plasma etching machine capable of automatically cleaning etching reactants |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113436990A (en) |
-
2021
- 2021-05-21 CN CN202110559886.3A patent/CN113436990A/en not_active Withdrawn
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| PB01 | Publication | ||
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| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20210924 |
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| WW01 | Invention patent application withdrawn after publication |