CN113423257A - Middle and far infrared dual-band tunable ultra-wideband absorber - Google Patents
Middle and far infrared dual-band tunable ultra-wideband absorber Download PDFInfo
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- CN113423257A CN113423257A CN202110809271.1A CN202110809271A CN113423257A CN 113423257 A CN113423257 A CN 113423257A CN 202110809271 A CN202110809271 A CN 202110809271A CN 113423257 A CN113423257 A CN 113423257A
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- 239000006096 absorbing agent Substances 0.000 title claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 67
- 229910052751 metal Inorganic materials 0.000 claims abstract description 67
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 53
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000004020 conductor Substances 0.000 claims abstract description 19
- 238000010521 absorption reaction Methods 0.000 abstract description 27
- 238000001514 detection method Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 111
- 238000010586 diagram Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
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- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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Abstract
The invention relates to the field of wave absorbers, in particular to a medium-far infrared dual-band tunable ultra-wideband absorber which comprises an ideal electric conductor layer, a dielectric layer and a first metal layer which are sequentially arranged from bottom to top, wherein a second metal layer is arranged in the dielectric layer, a first graphene layer is arranged at the lower part of the first metal layer, and a second graphene layer is arranged at the lower part of the second metal layer. The tunable absorption method has the beneficial effects that when the chemical potential of the graphene is changed, the tunable absorption method can realize the broadband adjustability, so that the purpose of tunable absorption is achieved; compared with the traditional single-metal metamaterial, the metal-graphene structure can keep high absorption, meanwhile, a metal layer on a graphene layer and an ideal electric conductor layer are used as electrodes, the Fermi level of graphene is adjusted by applying bias voltage, and the Fermi level of each layer of graphene is effectively controlled to realize a dynamic tuning function. The method has good application to infrared detection of infrared signals in two atmospheric windows of 3-5 mu m and 8-12 mu m.
Description
Technical Field
The invention relates to the field of wave absorbers, in particular to a medium-far infrared dual-waveband tunable ultra-wideband absorber.
Background
The infrared detection technology as an effective detection means has irreplaceable effects in the military fields of precise guidance, aiming systems, night vision and the like and the aerospace field. For infrared detection, it is generally necessary to capture (3-5 μm and 8-12 μm) the infrared signal in these two atmospheric windows. The absorption broadband of the existing infrared metamaterial wave absorber is narrow, the 'stealth' requirement on a target cannot be met, and the problems of insufficient modulation depth, large and complicated structure, inflexible design, incapability of real-time tuning and the like exist.
Disclosure of Invention
The invention aims to solve the technical problems that the absorption broadband of the existing wave absorber is narrow and the broadband is not tunable, and in order to solve the problems, the invention provides a medium-far infrared dual-waveband tunable ultra-wideband absorber which can realize the adjustability of the broadband so as to achieve the aim of tunable absorption.
The invention relates to a medium-far infrared dual-band tunable ultra-wideband absorber which comprises an ideal electric conductor layer, a dielectric layer and a first metal layer which are sequentially arranged from bottom to top, wherein a second metal layer is arranged in the dielectric layer, a first graphene layer is arranged at the lower part of the first metal layer, and a second graphene layer is arranged at the lower part of the second metal layer.
Furthermore, the dielectric layer has a first dielectric layer and a second dielectric layer, the first dielectric layer contacts with the first graphene layer, the second dielectric layer contacts with the ideal electric conductor layer, and the second metal layer and the second graphene layer are located between the first dielectric layer and the second dielectric layer.
Furthermore, the first metal layer and the second metal layer are both in a cross shape.
Furthermore, the first metal layer and the second metal layer are both in a cross fractal shape.
Furthermore, the number of the second metal layers is a plurality, and the plurality of second metal layers are distributed in an array manner.
Further, the first metal layer and the second metal layer are both in a cross-shaped three-level fractal shape.
Furthermore, the ideal electric conductor layer, the first graphene layer, the second graphene layer and the dielectric layer are all squares with the side length of 4.5-5.5 microns, and the thickness of the dielectric layer is 2.5-2.8 microns.
Further, the centers of the ideal electric conductor layer, the first metal layer, the second metal layer, the first graphene layer, the second graphene layer and the dielectric layer are positioned on the same vertical straight line.
The invention has the beneficial effects that the surface conductivity of the graphene changes along with the Fermi level, and when the chemical potential of the graphene is changed, the invention can realize the adjustability of the broadband, thereby achieving the purpose of tunable absorption; compared with the traditional single-metal metamaterial, the metal-graphene structure can keep high absorption, meanwhile, a metal layer on a graphene layer and an ideal electric conductor layer are used as electrodes, the Fermi level of graphene is adjusted by applying bias voltage, and the Fermi level of each layer of graphene is effectively controlled to realize a dynamic tuning function.
Drawings
FIG. 1 is a perspective view of the present invention;
FIG. 2 is an exploded view of FIG. 1;
FIG. 3 is a schematic diagram of a first metal layer structure according to the present invention;
FIG. 4 is a schematic diagram of a second metal layer structure according to the present invention;
FIG. 5 is a diagram of a corresponding absorption spectrum in the far infrared band;
FIG. 6 is a diagram of the light absorption of the present invention.
In the figure, 1, a first metal layer 2, a second metal layer 3, a first graphene layer 4, a second graphene layer 5, a first dielectric layer 6, a second dielectric layer 7, and an ideal electric conductor layer.
Detailed Description
As shown in fig. 1 and fig. 2, the middle and far infrared dual-band tunable ultra-wideband absorber includes an ideal electric conductor layer 7, a dielectric layer and a first metal layer 1, which are sequentially arranged from bottom to top, a second metal layer 2 is arranged in the dielectric layer, a first graphene layer 3 is arranged on the lower portion of the first metal layer 1, and a second graphene layer 4 is arranged on the lower portion of the second metal layer 2. The surface conductivity of the graphene changes along with the Fermi level, and when the chemical potential of the graphene is changed, the tunable absorption method can achieve broadband adjustability, so that the purpose of tunable absorption is achieved; compared with the traditional single-metal metamaterial, the metal-graphene structure can keep high absorption, meanwhile, the metal layer on the graphene layer and the ideal electric conductor layer 7 serve as electrodes, the Fermi level of the graphene is adjusted by applying bias voltage, and the Fermi level of each layer of graphene is effectively controlled to realize a dynamic tuning function. The invention has the advantages of ultra wide band, insensitive polarization, high absorptivity, adjustability and controllability and the like, and has wide application prospect in thermal imaging, infrared detection and infrared stealth. The graphene single-layer structure is easy to process, can form complete distribution, and lays a solid foundation for the realization of subsequent devices. The middle and far infrared dual-band metamaterial absorber provided by the invention is simultaneously applied to tunable broadband absorption of infrared (MWIR) and far infrared (LWIR) spectral regions in two atmospheric windows, broadband absorption with a bandwidth of 0.38 mu m (absorption rate > 80%) is realized between 3 and 5 mu m, average absorption rate is 88.3% in a range of 8 to 12 mu m, and bandwidth is 2.48 mu m (absorption rate > 90%).
As shown in fig. 1 and 2, the dielectric layer has a first dielectric layer 5 and a second dielectric layer 6, the first dielectric layer 5 contacts with the first graphene layer 3, the second dielectric layer 6 contacts with the ideal electric conductor layer, and the second metal layer 2 and the second graphene layer 4 are located between the first dielectric layer 5 and the second dielectric layer 6.
As shown in fig. 1 to 4, the first metal layer 1 and the second metal layer 2 are both cross-shaped.
As shown in fig. 1 to 4, the first metal layer 1 and the second metal layer 2 are both cross-shaped.
As shown in fig. 2 and fig. 4, the number of the second metal layers 2 is several, and the several second metal layers 2 are distributed in an array.
As shown in fig. 1 to 4, the first metal layer 1 and the second metal layer 2 are both cross-shaped and three-step fractal.
The ideal electric conductor layer 7, the first graphene layer 3, the second graphene layer 4 and the dielectric layer are all squares with the side length of 4.5-5.5 micrometers, and the thickness of the dielectric layer is 2.5-2.8 micrometers. The preferred dielectric layer side is 5 μm and the dielectric layer thickness is 2.8. mu.m. The preferred thickness of the first dielectric layer 5 is 0.5 μm.
As shown in fig. 1 and fig. 2, the centers of the ideal electric conductor layer 7, the first metal layer 1, the second metal layer 2, the first graphene layer 3, the second graphene layer 4 and the dielectric layer are located on the same vertical straight line.
The first metal layer 1 and the second metal layer 2 can be made of gold, and the conductivity of the gold is determined by Drude model
Plasma frequency wp＝1.36×1016rad/s, scattering power γc3.33 × 10 ═13rad/s. The conductivity of graphene is provided by the long-term equation, and Kubo determines the in-band and inter-band transitions from the two togetherg(ω,μc,τ,T)＝σintra+σinter
When E isf≥2kBAnd T, the conductivity of the graphene in the middle and far infrared and terahertz regions is mainly determined by in-band transition, and the transition is as shown in formula (3)
The first metal layer 1 is a cross-shaped fractal resonator, which is attached to the surface of graphene, and the evolution of the first, second and third levels of the metal cross shape is shown in fig. 3. In this embodiment, since the 3-level fractal has more formants, a better absorption bandwidth is provided, and the 3-level fractal is adopted. The 1-3 level cross fractal array is simulated by the structural parameters of the metal-graphene wave absorber, so as to obtain the corresponding absorption spectrum in the far infrared band, as shown in the attached figure 5. At the Fermi level EfAt 0.8eV, the width of 8-12 μm is 2.86 μm (absorption rate)>90%) and the average absorbance was 92.1%. The main analysis of the absorption of the 3-step form was carried out in the present invention, and the structure of the 3-step form is shown in FIG. 3. The ideal light absorption in the metamaterial wave absorber is mainly generated by a metal structure pattern layer, the graphene layer mainly plays a role in regulation, and the loss caused by the dielectric layer is remained in the ideal electric conductor layer 7.
Under the same period of the absorption characteristic analysis of the dual-band ultra-wideband, the invention optimizes the structure, adjusts some parameters including the thickness of the dielectric layer of 2.8 mu m and the Fermi level EfThe absorption of the bi-layer metal-graphene structure was simulated using the above parameter values as shown in fig. 6. The simulation of the response of the upper layer metal-graphene structure in the mid-infrared band is shown by the solid curve in fig. 6, and the 3 × 3 metal fractal array structure of the second metal layer 2 excites the absorption peak in the mid-infrared band, as shown by the dashed curve in fig. 6. The invention provides a dual-band superThe material absorber realizes tunable broadband absorption in MWIR and LWIR spectral regions, and realizes the bandwidth of 0.38 μm (absorptivity) in a region of 3-5 μm>80%) broadband absorption with an average absorption of 88.3% in the 8-12 μm region, achieving a bandwidth of 2.48 μm (absorption)>90%) as shown by the smaller line-scale dashed curve in fig. 6.
Claims (8)
1. The tunable ultra-wideband absorber of middle and far infrared dual-waveband is characterized in that: the graphene-based solar cell comprises an ideal electric conductor layer (7), a medium layer and a first metal layer (1), wherein the ideal electric conductor layer, the medium layer and the first metal layer are sequentially arranged from bottom to top, a second metal layer (2) is arranged in the medium layer, a first graphene layer (3) is arranged on the lower portion of the first metal layer (1), and a second graphene layer (4) is arranged on the lower portion of the second metal layer (2).
2. The mid-far infrared dual-band tunable ultra-wideband absorber of claim 1, wherein: the dielectric layer comprises a first dielectric layer (5) and a second dielectric layer (6), the first dielectric layer (5) is contacted with the first graphene layer (3), the second dielectric layer (6) is contacted with the ideal electric conductor layer, and the second metal layer (2) and the second graphene layer (4) are positioned between the first dielectric layer (5) and the second dielectric layer (6).
3. The mid-far infrared dual-band tunable ultra-wideband absorber of claim 1 or 2, wherein: the first metal layer (1) and the second metal layer (2) are both in a cross shape.
4. The mid-far infrared dual-band tunable ultra-wideband absorber of claim 3, wherein: the first metal layer (1) and the second metal layer (2) are both in a cross fractal shape.
5. The mid-far infrared dual-band tunable ultra-wideband absorber of claim 4, wherein: the number of the second metal layers (2) is multiple, and the multiple second metal layers (2) are distributed in an array mode.
6. The mid-far infrared dual-band tunable ultra-wideband absorber of claim 4, wherein: the first metal layer (1) and the second metal layer (2) are both in a cross-shaped three-level fractal shape.
7. The mid-far infrared dual-band tunable ultra-wideband absorber of claim 1, wherein: the ideal electric conductor layer (7), the first graphene layer (3), the second graphene layer (4) and the dielectric layer are all squares with the side length of 4.5-5.5 micrometers, and the thickness of the dielectric layer is 2.5-2.8 micrometers.
8. The mid-far infrared dual-band tunable ultra-wideband absorber of claim 1, wherein: the centers of the ideal electric conductor layer (7), the first metal layer (1), the second metal layer (2), the first graphene layer (3), the second graphene layer (4) and the dielectric layer are positioned on the same vertical straight line.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114709624A (en) * | 2022-04-12 | 2022-07-05 | 西安电子科技大学 | Super surface with circularly polarized wave asymmetric transmission and one-way wave absorption double functions |
| WO2023163363A1 (en) * | 2022-02-25 | 2023-08-31 | 재단법인 파동에너지 극한제어연구단 | Low frequency broadband absorber |
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| US20150357504A1 (en) * | 2013-01-30 | 2015-12-10 | Suzhou Institute Of Nano-Tech And Nano-Bionics Of Chinese Academy Of Science | Graphene transistor optical detector based on metamaterial structure and application thereof |
| CN107978871A (en) * | 2017-12-27 | 2018-05-01 | 厦门大学 | Polarization based on graphene multiple resonant structures does not depend on broadband Terahertz wave absorbing device |
| CN111697346A (en) * | 2020-06-30 | 2020-09-22 | 安阳师范学院 | Terahertz double-broadband adjustable absorber based on graphene |
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2021
- 2021-07-16 CN CN202110809271.1A patent/CN113423257A/en active Pending
Patent Citations (3)
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| US20150357504A1 (en) * | 2013-01-30 | 2015-12-10 | Suzhou Institute Of Nano-Tech And Nano-Bionics Of Chinese Academy Of Science | Graphene transistor optical detector based on metamaterial structure and application thereof |
| CN107978871A (en) * | 2017-12-27 | 2018-05-01 | 厦门大学 | Polarization based on graphene multiple resonant structures does not depend on broadband Terahertz wave absorbing device |
| CN111697346A (en) * | 2020-06-30 | 2020-09-22 | 安阳师范学院 | Terahertz double-broadband adjustable absorber based on graphene |
Non-Patent Citations (1)
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Cited By (2)
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| WO2023163363A1 (en) * | 2022-02-25 | 2023-08-31 | 재단법인 파동에너지 극한제어연구단 | Low frequency broadband absorber |
| CN114709624A (en) * | 2022-04-12 | 2022-07-05 | 西安电子科技大学 | Super surface with circularly polarized wave asymmetric transmission and one-way wave absorption double functions |
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