CN113423186A - Processing technology of high-heat-conductivity aluminum substrate - Google Patents
Processing technology of high-heat-conductivity aluminum substrate Download PDFInfo
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- CN113423186A CN113423186A CN202110700416.4A CN202110700416A CN113423186A CN 113423186 A CN113423186 A CN 113423186A CN 202110700416 A CN202110700416 A CN 202110700416A CN 113423186 A CN113423186 A CN 113423186A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
Abstract
The invention discloses a processing technology of a high-heat-conductivity aluminum substrate, which is characterized in that double-sided anodic oxidation or single-sided anodic oxidation is carried out on the aluminum substrate, and the thickness of an anode of a formed aluminum oxide layer is 30-150 micrometers. According to the invention, the thickness of the anode is increased to 30-150 microns by increasing the thickness of the anode, so that a layer of Al is generated on the surface of the aluminum plate2O3And the ceramic layer can play double roles of heat dissipation and insulation. The invention utilizes the heat-conducting adhesive film bonding technology to press three materials of thick anode aluminum oxide, heat-conducting adhesive film and copper foil, and can produce a novel aluminum substrate with high heat dispersion, low thermal resistance and high pressure resistance.
Description
Technical Field
The invention relates to a processing technology of an aluminum substrate, in particular to a processing technology of a high-heat-conductivity aluminum substrate.
Background
The copper clad laminate is used as one of basic materials of the PCB, is a plate-shaped material formed by soaking a reinforcing material with resin, covering one side or two sides with copper foil and carrying out hot pressing, and mainly plays roles of interconnection, conduction, insulation and support on the PCB.
At present, the aluminum-based copper-clad plate commonly used in the market can be divided into the following types according to the material of the insulating layer: glass fiber cloth type, glue coated copper foil type, ceramic powder filled heat conducting glue film type, polyimide film type and the like. The polyimide film is used for bending the metal substrate, and will not be discussed at this time. The thermal conductivity of the remaining similar insulating media is currently relatively low due to their resin composition. Even the ceramic powder filled heat-conducting glue film type has the heat conductivity coefficient not exceeding 12W/m.K at most. In a word, the existing aluminum-based copper-clad plate mainly has the following four defects: firstly, the existing adhesive film technology has small heat conductivity coefficient which is not more than 12W/m.K at present; if the thickness of the heat-conducting adhesive film is reduced, the pressure resistance value is reduced; thirdly, when the thickness of the heat-conducting adhesive film is increased, the heat-conducting effect is deteriorated; fourthly, the existing aluminum substrate anode has thin thickness and lower voltage withstanding value.
Along with the development of the electronic industry, the electronic product needs to transmit heat rapidly, and the aluminum substrate with the conventional structure in the current market cannot meet the heat dissipation requirement of the electronic product, and a substrate with a better heat conduction effect needs to be searched for processing and manufacturing a PCB.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a processing technology of a novel aluminum substrate with high heat dissipation performance, low thermal resistance and high pressure resistance.
The technical scheme adopted by the invention is as follows:
the processing technology of the high-thermal-conductivity aluminum substrate comprises the step of carrying out double-sided anodic oxidation or single-sided anodic oxidation on the aluminum substrate, wherein the thickness of an anode of a formed aluminum oxide layer is 20-150 micrometers.
The thickness of the aluminum oxide layer anode is more preferably 30 to 120 μm.
The invention relates to a processing technology of a high-heat-conductivity aluminum substrate, which specifically comprises the following steps:
s1, selecting a 1060 series aluminum plate, wherein the thickness of the aluminum plate is 0.5-3.0 mm;
s2, carrying out anodic oxidation on the 1060 aluminum plate;
s3, taking a pressing steel plate die and placing a lower steel plate die;
s4, paving a bottom copper foil;
s5, flatly laying a heat-conducting adhesive film for insulation and heat dissipation, wherein the thickness of the adhesive film is 25-200 mm;
s6, enabling the thick anode surface of the aluminum plate to face downwards, and enabling the anode membrane to be in contact with the heat-conducting glue membrane;
and S7, placing an upper steel plate mould, fastening an upper steel plate and a lower steel plate, pushing the upper steel plate and the lower steel plate into a press, and pressing to obtain a high-heat-conductivity aluminum substrate finished product.
On the basis of the technical scheme, the anodizing time in the step S2 is 2-20 hours, the voltage is controlled to be 14-22V, and the current is controlled to be 3500-4200A.
Further, the pressing in step S7 is performed by a segmented heating and pressurizing method at a temperature of 100-200 ℃ and a pressure of 5-45 kg/cm2。
Compared with the prior art, the invention has the beneficial effects that:
different from the prior aluminum substrate anode with the thickness less than 5 microns in China, the aluminum substrate anode can be increased to 20-150 microns according to the product characteristics by increasing the thickness of the anode, so that a layer of Al is generated on the surface of the aluminum plate2O3And the ceramic layer can play double roles of heat dissipation and insulation. The invention utilizes the heat-conducting adhesive film bonding technology to press three materials of thick anode aluminum oxide, heat-conducting adhesive film and copper foil, and can produce a novel aluminum substrate with high heat dispersion, low thermal resistance and high pressure resistance. Compared with the prior similar products, the invention has the following advantages:
1. the thickness of the heat-conducting adhesive film is reduced, and the thermal resistance of the substrate is reduced;
2. the thickness of the aluminum oxide layer is increased, and the heat conduction performance of the whole plate is improved;
3. the structure of the heat-conducting glue film and the aluminum oxide has more stable breakdown voltage;
4. the thicknesses of the heat-conducting glue film and the aluminum oxide can be freely matched, and the heat-conducting glue film and the aluminum oxide can be prepared according to different requirements of customers.
Detailed Description
For the purpose of facilitating an understanding of the present invention, the present invention will now be described by way of examples. It should be understood by those skilled in the art that the examples are only for the purpose of facilitating understanding of the present invention and should not be construed as specifically limiting the present invention. Unless otherwise specified, various starting materials of the present invention are commercially available.
Unless defined or indicated otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. In addition, any methods and materials similar or equivalent to those described herein can be used in the methods of the present invention.
Example 1
A processing technology of a high-thermal-conductivity aluminum substrate specifically comprises the following steps:
s1, selecting a 1060 series aluminum plate, wherein the thickness of the aluminum plate is 0.5-3.0 mm;
s2, carrying out anodic oxidation on the 1060 aluminum plate, wherein the thickness of an anode is 30-120 micrometers; the oxidation time is 2-20 hours, the voltage is controlled to be 14-22V, and the current is controlled to be 3500-4200A;
s3, taking a pressing steel plate die and placing a lower steel plate die;
s4, paving a bottom copper foil;
s5, flatly laying a heat-conducting adhesive film for insulation and heat dissipation, wherein the thickness of the adhesive film is 25-200 mm;
s6, enabling the thick anode surface of the aluminum plate to face downwards, and enabling the anode membrane to be in contact with the heat-conducting glue membrane;
s7, placing an upper steel plate mould, fastening an upper steel plate and a lower steel plate, then pushing the upper steel plate and the lower steel plate into a press, and pressing the upper steel plate and the lower steel plate in a segmented heating and pressurizing mode to obtain a high-heat-conductivity aluminum substrate finished product, wherein the segmented heating and pressurizing process is as follows:
1, section: heating at 100 deg.C for 5 min; the pressure was 8kg/cm2Time 5 minutes;
2, section: heating at 130 deg.C for 2 min; the pressure is 15kg/cm2Time 2 minutes;
and 3, section: heating at 130 deg.C for 5 min; the pressure is 15kg/cm2And the time is 8 minutes;
4, section: heating to 160 deg.c for 10 min; the pressure was 40kg/cm2Time 7 minutes;
and 5, section: heating at 195 deg.c for 5 min; the pressure was 40kg/cm2Time 5 minutes;
6, section: heating at 195 deg.c for 40 min; the pressure was 40kg/cm2Time 40 minutes;
7, section: heating at 195 deg.c for 90 min; the pressure was 40kg/cm2Time 90 minutes;
and 8, section: heating to 160 deg.c for 15 min; the pressure was 21kg/cm2Time 15 minutes;
9, section: heating at 100 deg.C for 15 min; the pressure was 8kg/cm2Time 15 minutes.
Comparative example
Compared with the embodiment 1, the aluminum plate, the copper foil and the heat-conducting adhesive film have the same thickness, and the anode has the thickness of 5-10 microns; the procedure was the same as in example 1 except for the anodization process.
The conventional aluminum plate double-layer structure product processed by the comparative example is processed to obtain a new material laminated structure product with the same processing method as the example 1, and the thermal conductivity coefficient comparison test is carried out, and the results are as follows:
the heat conductivity coefficient comparison test shows that the heat conductivity coefficient of the conventional aluminum substrate insulating medium in the comparison example is 1-12W/m.k, while the new material insulating medium in the embodiment 1 is composed of 1-12W/m.k of the heat conducting glue film and 22-40W/m.k of aluminum oxide, and the heat conducting effect of the new material is obviously superior to that of the conventional aluminum substrate.
Example 2
Compared with the embodiment 1, the processing technology of the high-heat-conductivity aluminum substrate has the advantages that the thickness of an aluminum plate anode is 20-150 micrometers; the oxidation time is 5-20 hours, the voltage is controlled to be 14-22V, and the current is controlled to be 3500-4200A; the other processes are the same as in example 1.
Example 3
Compared with the embodiment 1, the processing technology of the high-thermal-conductivity aluminum substrate has the advantages that the thickness of a thermal-conductivity adhesive film is 50-100 mm; the other processes are the same as in example 1.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and all simple modifications, changes and equivalent structural changes made to the above embodiment according to the technical spirit of the present invention still fall within the protection scope of the technical solution of the present invention.
Claims (6)
1. The processing technology of the high-thermal-conductivity aluminum substrate is characterized in that double-sided anodic oxidation or single-sided anodic oxidation is carried out on the aluminum substrate, and the thickness of the formed aluminum oxide layer anode is 20-150 micrometers.
2. The processing technology of the aluminum substrate with high thermal conductivity as claimed in claim 1, wherein the thickness of the aluminum oxide layer anode is 30-120 μm.
3. The processing technology of the high thermal conductivity aluminum substrate as claimed in claim 1, comprising the steps of:
s1, selecting a 1060 series aluminum plate, wherein the thickness of the aluminum plate is 0.5-3.0 mm;
s2, carrying out anodic oxidation on the 1060 aluminum plate;
s3, taking a pressing steel plate die and placing a lower steel plate die;
s4, paving a bottom copper foil;
s5, flatly laying a heat-conducting adhesive film for insulation and heat dissipation, wherein the thickness of the adhesive film is 25-200 mm;
s6, enabling the thick anode surface of the aluminum plate to face downwards, and enabling the anode membrane to be in contact with the heat-conducting glue membrane;
and S7, placing an upper steel plate mould, fastening an upper steel plate and a lower steel plate, pushing the upper steel plate and the lower steel plate into a press, and pressing to obtain a high-heat-conductivity aluminum substrate finished product.
4. The processing technology of the high thermal conductivity aluminum substrate of claim 1, wherein: the anodic oxidation time of step S2 is 2-20 hours, the voltage is controlled at 14V-22V, and the current is controlled at 3500-4200A.
5. The processing technology of the high thermal conductivity aluminum substrate of claim 1, wherein: the pressing step S7 is carried out by a segmented heating and pressurizing method, wherein the temperature is 100-200 ℃, and the pressure is 5-45 kg/cm2。
6. The processing technology of the high thermal conductivity aluminum substrate according to claim 5, wherein the step heating and pressurizing are as follows:
1, section: heating at 100 deg.C for 5 min; the pressure was 8kg/cm2Time 5 minutes;
2, section: heating at 130 deg.C for 2 min; the pressure is 15kg/cm2Time 2 minutes;
and 3, section: heating at 130 deg.C for 5 min; the pressure is 15kg/cm2And the time is 8 minutes;
4, section: heating to 160 deg.c for 10 min; the pressure was 40kg/cm2Time 7 minutes;
and 5, section: heating at 195 deg.c for 5 min; the pressure was 40kg/cm2Time 5 minutes;
6, section: heating at 195 deg.c for 40 min; the pressure was 40kg/cm2Time 40 minutes;
7, section: heating at 195 deg.c for 90 min; the pressure was 40kg/cm2Time 90 minutes;
and 8, section: heating to 160 deg.c for 15 min; the pressure was 21kg/cm2Time 15 minutes;
9, section: heating at 100 deg.C for 15 min; the pressure was 8kg/cm2Time 15 minutes.
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CN202110700416.4A CN113423186A (en) | 2021-06-23 | 2021-06-23 | Processing technology of high-heat-conductivity aluminum substrate |
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CN202110700416.4A CN113423186A (en) | 2021-06-23 | 2021-06-23 | Processing technology of high-heat-conductivity aluminum substrate |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105196645A (en) * | 2015-11-05 | 2015-12-30 | 惠州市煜鑫达科技有限公司 | Production method of ultra-thin aluminum based copper-clad plate, vacuum laminating structure and aluminum based copper-clad plate |
CN105899006A (en) * | 2016-06-30 | 2016-08-24 | 广德宝达精密电路有限公司 | Processing method of multilayer heat dissipation printed board |
CN107848246A (en) * | 2015-07-17 | 2018-03-27 | 罗杰斯德国有限公司 | Method for the substrate of electric circuit and for manufacturing this substrate |
CN107867037A (en) * | 2016-09-26 | 2018-04-03 | 江门市华锐铝基板有限公司 | A kind of pressing process of aluminum-based copper-clad plate |
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2021
- 2021-06-23 CN CN202110700416.4A patent/CN113423186A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107848246A (en) * | 2015-07-17 | 2018-03-27 | 罗杰斯德国有限公司 | Method for the substrate of electric circuit and for manufacturing this substrate |
CN105196645A (en) * | 2015-11-05 | 2015-12-30 | 惠州市煜鑫达科技有限公司 | Production method of ultra-thin aluminum based copper-clad plate, vacuum laminating structure and aluminum based copper-clad plate |
CN105899006A (en) * | 2016-06-30 | 2016-08-24 | 广德宝达精密电路有限公司 | Processing method of multilayer heat dissipation printed board |
CN107867037A (en) * | 2016-09-26 | 2018-04-03 | 江门市华锐铝基板有限公司 | A kind of pressing process of aluminum-based copper-clad plate |
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