CN113414891A - Method for determining crystal line of silicon crystal bar, method for squaring crystal line and squaring equipment - Google Patents
Method for determining crystal line of silicon crystal bar, method for squaring crystal line and squaring equipment Download PDFInfo
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- CN113414891A CN113414891A CN202110635907.5A CN202110635907A CN113414891A CN 113414891 A CN113414891 A CN 113414891A CN 202110635907 A CN202110635907 A CN 202110635907A CN 113414891 A CN113414891 A CN 113414891A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
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Abstract
The invention relates to the technical field of hard and brittle bar cutting, in particular to a method for determining a crystal line of a silicon crystal bar, an evolution method and evolution equipment, wherein a clamping mechanism provided with a rotary jacking mechanism is applied in the method for determining the crystal line of the silicon crystal bar, the rotary jacking mechanism clamps the silicon crystal bar by jacking two end faces of the silicon crystal bar, a plurality of sensors are arranged around the rotary jacking mechanism, the sensors can pick up images of the end faces, a complete image of an outer cross section circle of the end face is obtained through synthesis of local images shot by the sensors, the coordinate of the crystal line is further identified, and the position of the crystal line on the silicon crystal bar in actual cutting is found through coordinate conversion. The clamping mechanism can help to rapidly detect the position of the crystal line of the silicon crystal bar, the cutting method capable of accurately finding the crystal line of the silicon crystal bar is provided, the processing technology of the silicon crystal bar in the evolution process is simplified, and the evolution quality of the silicon crystal bar can be effectively improved.
Description
Technical Field
The invention relates to the technical field of cutting of hard and brittle bars, in particular to a crystal line determining method, a squaring method and squaring equipment for silicon crystal bars.
Background
In the method for searching the crystal wire in the prior art, a sensor is generally arranged on the side edge of the crystal rod, the sensor is vertical to the axis of the crystal rod, the crystal rod needs to rotate by 360 degrees, so that the crystal wire at a high point is found through difference analysis through data collected continuously for many times, coordinates are generated, the 4-point coordinates are connected virtually, a crystal rod clamping mechanism is controlled to rotate the single crystal silicon rod, and the diamond wire is cut from the reference position of the virtual connection line. Many times, the process is troublesome.
The method for searching the crystal line is more suitable for the use of the axis line of the single crystal silicon rod after the axis line of the single crystal silicon rod is concentric with the clamping mechanism of the equipment, and the acquired data is only the circle of data of the acquisition point around the circumferential section of the single crystal silicon rod. If the pulling quality of the single crystal silicon rod is poor, so that the flatness accuracy of the outer circle surface of the single crystal silicon rod is poor, the crystal line is inclined along the axis, and the notch at the cut-out end and the position of the crystal line of the single crystal silicon rod are likely to have larger deviation when cut by the method, so that the single crystal silicon rod is scrapped. The precision is low, the cutting deviation is low, and the silicon rod is scrapped.
Disclosure of Invention
Therefore, a silicon crystal bar crystal line determining method, a squaring method and squaring equipment are needed to be provided to solve the problems that in the prior art, silicon crystal bars are troublesome in process and low in cutting precision, so that silicon bars are easily scrapped.
In order to achieve the purpose, the invention provides a method for determining a crystal line of a silicon crystal bar stock, which comprises the following steps:
clamping a silicon crystal bar on a clamping mechanism, wherein two ends of the clamping mechanism respectively prop against two end faces of the silicon crystal bar;
acquiring a first image of the end face by more than two image pickup devices, wherein the image pickup devices are arranged around the end face, and the first image is a partial image of the end face;
synthesizing two or more first images into a complete image of the end face;
and determining the crystal line position of the silicon crystal bar stock according to the complete image, and generating the coordinates of the crystal line position in the complete image.
Further, the method also comprises the following steps:
and converting the coordinates of the crystal wire position in the complete image into the coordinates of the crystal wire on the clamping mechanism according to the corresponding relation of the camera device and the coordinate system of the clamping mechanism.
Furthermore, each end face is provided with four camera devices, and the four camera devices surround the end faces and are evenly arranged.
Further, the method also comprises the following steps:
and judging the concentricity of the silicon crystal bar stock clamping according to the complete images of the two end faces.
Further, the method also comprises the following steps:
and if the concentricity deviation of the silicon crystal bar stock clamping is greater than the preset value, adjusting the position of one end of the clamping mechanism along the direction vertical to the axis of the silicon crystal bar stock to ensure that the concentricity deviation of the silicon crystal bar stock clamping is less than the preset value.
Further, the preset value is 0.05mm-0.2 mm.
Further, the method also comprises the following steps:
taking the virtual connection line of the crystal line coordinates of the front end surface and the rear end surface of the two single crystal silicon rods as a reference;
the clamping mechanism at one end is adjusted by micro-motion;
correcting and adjusting the positions of the entry point and the cut-out point of the front end face and the rear end face by adopting a material borrowing process;
and the distance correction value of the entry point and the exit point is 1/2 of the maximum deviation absolute value of the virtual connecting line reference of the front end face crystal line and the rear end face crystal line.
Further, the method comprises the following steps:
determining a crystal line of a silicon crystal bar;
squaring the silicon crystal bar along the crystal line;
the method for determining the crystal line of the silicon crystal bar stock is implemented by adopting the method for determining the crystal line of the silicon crystal bar stock in any technical scheme.
Further, the silicon crystal bar cutting equipment can be applied to the silicon crystal bar cutting method, and comprises a clamping mechanism and a cutting mechanism, wherein the clamping mechanism is provided with a top clamping mechanism which is abutted against the end face of the silicon crystal bar and is used for clamping the silicon crystal bar;
the clamping mechanism is also provided with more than two sensors which are arranged around the circumference of the top clamping mechanism;
the cutting mechanism comprises a cutting wheel train, and the diamond wire saw is wound in a wire groove of the cutting wheel train.
Different from the prior art, according to the technical scheme, the plurality of sensors are respectively arranged in the direction of the clamping mechanism towards the clamping direction of the silicon crystal bar, the sensors shoot local images of the cross section of the end part of the silicon crystal bar from a plurality of different directions and synthesize a complete external circle cross section diagram of the crystal bar, and the coordinates of the external circle cross section diagram are converted into coordinates of the crystal bar, so that convenience is brought. Meanwhile, the position of the clamping mechanism can be adjusted by comparing the concentricity of the excircle sectional views of the front end face and the back end face.
Drawings
FIG. 1 is a perspective view of a silicon ingot cutting and clamping in accordance with an embodiment;
FIG. 2 is a perspective view of a clamping mechanism in accordance with an embodiment;
FIG. 3 is an elevation view of a clamping mechanism in accordance with an embodiment;
FIG. 4 is a cross-sectional view of a silicon ingot in accordance with an embodiment;
FIG. 5 is a diagram illustrating a sensor capture interval in accordance with an embodiment;
FIG. 6 is an integrated view of multiple sensors capturing images in accordance with one embodiment;
FIG. 7 is a schematic diagram of a crystal line verification according to an embodiment.
Description of reference numerals:
1. silicon crystal bar stock;
2. a clamping mechanism;
21. a rotary top clamp mechanism;
22. a sensor;
23. a fixing frame.
Detailed Description
To explain technical contents, structural features, and objects and effects of the technical solutions in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.
In the description of the present application, it is to be noted that, unless otherwise specified, "a plurality" means two or more; the terms "upper," "lower," "left," "right," "inner," "outer," and the like, indicate an orientation or positional relationship that is merely for convenience in describing the application and to simplify the description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the application. Furthermore, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. "vertical" is not strictly vertical, but is within the tolerance of the error. "parallel" is not strictly parallel but within the tolerance of the error.
In the description of the present application, it is also to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be directly connected or indirectly connected through an intermediate. The specific meaning of the above terms in the present application can be understood as appropriate by one of ordinary skill in the art.
Referring to fig. 1 to 7, the present invention provides a method for determining a crystal line of a silicon ingot, a method for cutting a silicon ingot, and a cutting apparatus. The silicon rod is generally cut into 2 or 4 surfaces at a time, and under the limitation of the process conditions, the silicon rod can only be clamped by adopting a top clamping mode from the axial line direction of two ends. The cutting of the silicon single crystal rod needs to be carried out along 4 crystal line positions uniformly distributed on the excircle section of the silicon single crystal rod according to the process requirements, so that a rod with a square section is formed. In this embodiment, the silicon crystal ingot 1 is clamped by the chuck 2, and the crystal line of the silicon crystal ingot 1 is confirmed by the sensor 22 on the chuck 2 before the square cutting. Specifically, one side of the clamping mechanism 2 is provided with a rotary top clamping mechanism 21, the rotary top clamping mechanism 21 is pushed with the end face of the silicon crystal bar 1, the two end faces of the silicon crystal bar 1 are respectively provided with one clamping mechanism 2, and the two end faces are respectively pushed by the rotary top clamping mechanism 21 to clamp and fix the silicon crystal bar 1. Specifically, the sensor 22 is provided around the revolving top clamp mechanism 21, and the sensor 22 may be a device such as a visual sensor that can be used for image pickup. And each rotary top-clamping mechanism 21 is provided with a plurality of sensors 22 for shooting local images of the end surface of the silicon crystal bar stock 1, and the local images are integrated to form a complete cross-sectional view of the end surface, so that the position of the crystal line is identified.
Referring to fig. 1, the rotary jacking mechanism 21 on the clamping mechanism 2 near the L direction forcibly jacks the silicon crystal bar 1 in the R direction, and the rotary jacking mechanism 21 on the clamping mechanism 2 near the R direction forcibly jacks the silicon crystal bar 1 in the L direction. The silicon crystal bar 1 is fixedly clamped through the jacking action of two sides, the four side surfaces of the silicon crystal bar 1 need to be cut during cutting, the clamping mode can effectively avoid the collision and the resistance of the clamping mechanism 2 to a cutting rope saw or a cutter during cutting, and the normal operation of a cutting unit is ensured. Meanwhile, the clamping mechanism 2 can adopt a rotary jacking mechanism 21 for jacking and clamping, and can also adopt bolts and other modes to adjust different tightness for jacking and clamping. The clamping mechanism 2 is also provided with a fixing frame 23. The fixing frame 23 is a bearing seat, and is specifically used for fixing the rotating top clamping mechanism 21. Two ends of the silicon crystal bar stock 1 are respectively provided with a clamping mechanism 2. One clamping mechanism 2 is fixedly connected with a rack of the cutting mechanism, the upper end of the other clamping mechanism 2 is fixedly connected with a sliding plate, the sliding plate is connected with a transmission mechanism, and the transmission mechanism can drive the sliding plate to move, so that the clamping mechanism 2 fixedly connected with the sliding plate can be far away from or close to the clamping mechanism 2 fixedly connected with the rack, and the silicon crystal bar 1 is clamped.
With particular reference to fig. 3-7, a method of determining the crystal line of a silicon ingot 1 comprises the steps of:
clamping a silicon crystal bar material 1 on a clamping mechanism 2, and respectively jacking two end faces of the silicon crystal bar material by using the clamping mechanisms 2 at two ends;
acquiring a first image (see fig. 5) of the end face by the sensor 22 on each fixture 2, wherein the first image is a partial image of the end face, and a plurality of sensors 22 are arranged around the end face;
referring to fig. 6, the images taken by two or more sensors 22 are combined to form a complete image of the end face;
and determining the crystal line position of the silicon crystal bar stock 1 according to the complete image, and identifying and generating a corresponding coordinate position in the complete image.
In order to facilitate the operation on the actual silicon crystal bar stock 1, the position coordinates of the crystal line generated in the complete image are converted into coordinates on the silicon crystal bar stock 1 by comparing the corresponding relationship between the positions of the sensors 22 and the clamping mechanism 2. Specifically, the corresponding length can be calculated and measured according to the proportional relation between the image and the real object to complete the identification.
Preferably, four sensors 22 are disposed on the end surface, and the four sensors 22 are uniformly disposed around the end surface, so that 4 sensors 22 respectively capture partial images of the end surface in four directions, and a complete image is obtained by integrating the four partial images (see fig. 6). Since the cutting is to cut four sides of the silicon crystal bar stock 1, the position of 4 crystal lines can be found by the aid of 4 local images.
In addition to this, a plurality of sensors 22 as described above may be provided on both ends of the silicon crystal ingot 1, respectively, to form an outer circular cross-sectional view of the silicon crystal ingot 1 of 2 end faces. And judging whether the front and back clamping concentricity of the silicon crystal bar material 1 meets the precision requirement of the clamping process or not through the coordinate positions of the front and back section drawings. For example, the condition that the concentricity is less than or equal to the preset value can be limited to perform subsequent cutting so as to achieve higher cutting quality. Meanwhile, if the concentricity deviation value of the silicon crystal bar stock 1 is larger than the preset value after the two cross-sectional views are compared, the position of one side of the clamping mechanism 2 is adjusted along the direction vertical to the axis of the silicon crystal bar stock 1, so that the concentricity deviation of the clamping of the silicon crystal bar stock 1 is smaller than the preset value. Specifically, referring to fig. 1, when the silicon ingot 1 located on the left side in the figure is pushed in and clamped, the end face is shifted to the upper side by 0.2mm, which results in 0.2mm of the outer circle cross-sectional concentricity of the left and right end faces photographed by the sensor 22. At this time, the clamping mechanism 2 on the left side in the figure can be adjusted, specifically, the rotary top clamping mechanism 21 on the clamping mechanism 2 on the left side can be adjusted to enable the end surface of the silicon crystal bar 1 which is supported and clamped by the rotary top clamping mechanism to move downwards by 0.2mm, so that the concentricity of the two end surfaces is less than or equal to a preset value, and the cutting quality of the silicon crystal bar 1 of the subsequent evolution is ensured. Specifically, the preset value is 0.05mm-0.2 mm.
And comparing the concentricity of the excircle cross-sectional views of the two end surfaces of the silicon crystal bar stock 1, and further controlling the concentricity of the silicon crystal bar stock 1 to be at a preset value by the fine-tuning clamping mechanism 2.
Besides the above-mentioned manner of adjusting the position of the crystal line, the method can also be realized by another manner, which specifically comprises the following steps:
taking a virtual connection line of crystal line coordinates obtained by identifying the front end face and the rear end face of the two silicon crystal bar materials 1 as a reference;
the clamping mechanism 2 at one end is adjusted by micro-motion;
correcting and adjusting the positions of the entry point and the exit point of the front end surface and the rear end surface by adopting a material borrowing process;
and the distance correction value of the entry point and the exit point is 1/2 which is the absolute value of the maximum deviation value of the virtual connection line reference of the front end face crystal line and the rear end face crystal line.
Specifically, if two end surfaces of the silicon crystal bar 1 are concentric, but the crystal line is twisted, the silicon crystal bar 1 is projected in the same direction (along the length direction of the silicon crystal bar 1), if the corresponding entry point and the corresponding cut-out point on the front end surface and the back end surface of the silicon crystal bar 1 are not coincident on the projection plane, that is, if the connecting line between the entry point and the center of the front end surface is 45 ° in the horizontal direction, and the connecting line between the cut-out point and the center of the back end surface is 46 ° in the horizontal direction, the distance correction value between the entry point and the cut-out point is ensured to be the absolute value 1/2 of the maximum deviation value of the virtual connecting line reference of the front end surface and the back end surface, so that the silicon crystal bar 1 can be rotated clockwise by 0.5 °, and the borrowing is completed.
Before the method for determining the crystal line is applied to the cutting procedure of the evolution of the silicon crystal bar stock 1, the equipment for evolving the silicon crystal bar stock 1 specifically comprises the following steps: a cutting mechanism and the device (clamping mechanism) for measuring the crystal line of the silicon crystal bar stock 1. Cutting mechanism can be including the diamond wire saw cutting equipment of cutting train the inslot of cutting train is around being equipped with the diamond wire saw, and the cutting train includes cutting wheel and drive wheel etc. the external drive power device of drive wheel (like external motor), opens drive power device back drive power device rotates and drives the drive wheel rotates, further by the drive wheel transmission drives the diamond wire saw rotates. Silicon crystal bar 1 can be transported through the lifting roller supporting frame, a plurality of rollers are arranged on the lifting roller supporting frame, the rollers are connected through a transmission device and driven by a motor at one end to rotate in a transmission mode, and the silicon crystal bar 1 is placed on the roller supporting frame and then transported to the clamping mechanism 2 (or moved to the position where the silicon crystal bar 1 is located by the clamping mechanism 2). Two end faces of the silicon crystal bar stock 1 are respectively provided with a clamping mechanism 2, the rotary top clamping mechanisms 21 arranged on the clamping mechanisms 2 on two sides are operated to respectively rotate to approach the end faces of the silicon crystal bar stocks 1 adjacent to each other, and the two end faces of the silicon crystal bar stocks 1 are subjected to opposite jacking acting forces to clamp the silicon crystal bar stocks 1. The base of the clamping mechanism 2 can be arranged on the sliding rail, so that the clamping mechanism 2 can drive the silicon crystal bar stock 1 to move. Before formal cutting, the end face of the silicon crystal bar stock 1 is shot by using the sensor 22 arranged on the clamping mechanism 2 and arranged on the periphery of the rotary top clamping mechanism 21, the side of the end face on the optimized two sides is respectively and uniformly provided with 4 sensors 22, the complete influence of the excircle cross section diagram of the end face is obtained by combining local images shot by the 4 sensors 22, and the crystal line coordinate is obtained by the obtained image identification calculation and converted into the coordinate on the silicon crystal bar stock object, so that the crystal line position of the silicon crystal bar stock 1 is determined, and the cutting quality can be ensured by controlling the concentricity of the excircle cross section diagrams of the end faces and the like. Further, the cutting mechanism is operated to drive the diamond wire saw to perform squaring on the silicon crystal bar 1 along the measured crystal wire, specifically, 4-face cutting can be completed once through four cutting stations, and two cutting stations can be arranged to perform 2 times of repeated cutting. Since the silicon crystal bar stock 1 is clamped by the two end surfaces near the top of the rotary top clamping mechanism 21, the cutting of the diamond wire saw is not blocked by the clamping device when the 4-side square cutting is carried out.
It should be noted that, although the above embodiments have been described herein, the invention is not limited thereto. Therefore, based on the innovative concepts of the present invention, the technical solutions of the present invention can be directly or indirectly applied to other related technical fields by making changes and modifications to the embodiments described herein, or by using equivalent structures or equivalent processes performed in the content of the present specification and the attached drawings, which are included in the scope of the present invention.
Claims (9)
1. A method for determining a crystal line of a silicon crystal bar stock is characterized by comprising the following steps:
clamping a silicon crystal bar on a clamping mechanism, wherein two ends of the clamping mechanism respectively prop against two end faces of the silicon crystal bar;
acquiring a first image of the end face by more than two image pickup devices, wherein the image pickup devices are arranged around the end face, and the first image is a partial image of the end face;
synthesizing two or more first images into a complete image of the end face;
and determining the crystal line position of the silicon crystal bar stock according to the complete image, and generating the coordinates of the crystal line position in the complete image.
2. The method for determining the crystal line of a silicon crystal ingot according to claim 1, further comprising the steps of:
and converting the coordinates of the crystal wire position in the complete image into the coordinates of the crystal wire on the clamping mechanism according to the corresponding relation of the camera device and the coordinate system of the clamping mechanism.
3. The method for determining a crystal line of a silicon ingot according to claim 1, wherein four of said imaging devices are provided for each of said end faces, and said four imaging devices are uniformly provided around said end face.
4. The method for determining the crystal line of a silicon crystal ingot according to claim 1, further comprising the steps of:
and judging the concentricity of the silicon crystal bar stock clamping according to the complete images of the two end faces.
5. The method for determining the crystal line of a silicon crystal ingot according to claim 4, further comprising the steps of:
and if the concentricity deviation of the silicon crystal bar stock clamping is greater than the preset value, adjusting the position of one end of the clamping mechanism along the direction vertical to the axis of the silicon crystal bar stock to ensure that the concentricity deviation of the silicon crystal bar stock clamping is less than the preset value.
6. The method for determining the crystal line of a silicon crystal ingot according to claim 5, wherein the predetermined value is 0.05mm to 0.2 mm.
7. The method for determining the crystal line of a silicon crystal ingot according to claim 1, further comprising the steps of:
taking the virtual connection line of the crystal line coordinates of the front end surface and the rear end surface of the two single crystal silicon rods as a reference;
the clamping mechanism at one end is adjusted by micro-motion;
correcting and adjusting the positions of the entry point and the cut-out point of the front end face and the rear end face by adopting a material borrowing process;
and the distance correction value of the entry point and the exit point is 1/2 of the maximum deviation absolute value of the virtual connecting line reference of the front end face crystal line and the rear end face crystal line.
8. A method for squaring a silicon crystal bar is characterized by comprising the following steps:
determining a crystal line of a silicon crystal bar;
squaring the silicon crystal bar along the crystal line;
wherein the determining of the crystal line of the silicon crystal ingot is performed by the method for determining a crystal line of a silicon crystal ingot according to any one of claims 1 to 7.
9. The silicon crystal bar cutting equipment is characterized by being applied to the silicon crystal bar cutting method according to claim 8, and comprises a clamping mechanism and a cutting mechanism, wherein the clamping mechanism is provided with a top clamping mechanism which abuts against the end face of a silicon crystal bar and is used for clamping the silicon crystal bar;
the clamping mechanism is also provided with more than two sensors which are arranged around the circumference of the top clamping mechanism;
the cutting mechanism comprises a cutting wheel train, and the diamond wire saw is wound in a wire groove of the cutting wheel train.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110635907.5A CN113414891B (en) | 2021-06-08 | 2021-06-08 | Method for determining crystal line of silicon crystal bar, method for squaring crystal line and squaring equipment |
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| CN202110635907.5A CN113414891B (en) | 2021-06-08 | 2021-06-08 | Method for determining crystal line of silicon crystal bar, method for squaring crystal line and squaring equipment |
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| CN113414891B (en) | 2022-04-05 |
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