CN113410655B - Ultra-wideband wave absorber with symmetrical G-shaped bending structure - Google Patents
Ultra-wideband wave absorber with symmetrical G-shaped bending structure Download PDFInfo
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- CN113410655B CN113410655B CN202110649689.0A CN202110649689A CN113410655B CN 113410655 B CN113410655 B CN 113410655B CN 202110649689 A CN202110649689 A CN 202110649689A CN 113410655 B CN113410655 B CN 113410655B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
Abstract
The invention provides an ultra-wideband wave absorber with a symmetrical G-shaped bent structure, which comprises: the metal unit comprises an upper layer metal unit, a medium substrate, a lower layer metal unit, an air layer and a metal reflecting plate; the upper-layer metal unit is connected with four G-shaped bent metal wires through four patch resistors with equal resistance values, and the G-shaped bent metal wires are obtained by bending the metal wires in the plane where the metal wires are located for four times in the same direction by 90 degrees; and the lower-layer metal unit is connected with a metal square ring through eight patch resistors with equal resistance values. According to the scheme of the invention, the ultra-wideband absorber has the advantages of symmetrical structure, ultrathin thickness, insensitive polarization and wide absorption frequency band.
Description
Technical Field
The invention relates to the technical field of ultra-wideband electromagnetic wave absorption, in particular to an ultra-wideband wave absorber with a symmetrical G-shaped bent structure.
Background
Electronic countermeasure becomes an important combat means in modern electronic combat, wherein an electromagnetic stealth technology is crucial, and the electromagnetic stealth technology is generally divided into an appearance stealth technology and a wave-absorbing material stealth technology. The appearance is stealthy and can not absorb electromagnetic waves, and the electromagnetic waves obtained by scattering of the target can still be captured by the multi-station radar. Therefore, a wave-absorbing material capable of perfectly absorbing incident electromagnetic waves has been the subject of intense research.
The rapid development of the radar technology puts higher and higher requirements on the wave absorbing material, and the traditional wave absorbing material has the defects of large size, poor absorption effect and the like, and cannot meet the actual application requirements. As a novel wave-absorbing material, the metamaterial wave absorber has attracted wide attention in the field of radio frequency stealth by virtue of the advantages of thin thickness, light weight, strong absorption and the like. In 2008, Landy firstly proposes to design a perfect wave absorber by using the electromagnetic resonance characteristics of a metamaterial, and the electromagnetic structure externally shows the resistance characteristic when resonating, and can rapidly absorb incident electromagnetic energy. Although the electromagnetic absorber has a very strong absorption capability, the resonant absorber mainly depends on electromagnetic resonance of a metal structure, and has a problem of narrow absorption bandwidth.
Disclosure of Invention
In order to solve the technical problems, the invention provides an ultra-wideband wave absorber with a symmetrical G-shaped bent structure, which is used for solving the technical problem that a resonant wave absorber has a narrow absorption bandwidth.
According to the invention, the ultra-wideband wave absorber with a symmetrical G-shaped bending structure is provided, and comprises:
an upper metal unit, a dielectric substrate, a lower metal unit, an air layer and a metal reflecting plate;
the upper layer metal unit is attached to the upper surface of the dielectric substrate, and the lower layer metal unit is attached to the lower surface of the dielectric substrate;
the air layer is positioned between the medium substrate and the metal reflecting plate;
the upper-layer metal unit is connected with four G-shaped bent metal wires through four patch resistors with equal resistance values, and the G-shaped bent metal wires are obtained by bending the metal wires in the plane where the metal wires are located for four times in the same direction by 90 degrees;
and the lower-layer metal unit is connected with a metal square ring through eight patch resistors with equal resistance values.
According to the scheme of the invention, the ultra-wideband absorption characteristic is realized through the structural design of the upper and lower metal patch layers, the resistor loading layer and the air layer which are rotationally symmetrical, and the upper and lower metal units have higher symmetry and are beneficial to realizing the polarization insensitivity characteristic. The ultra-wideband wave absorber with the symmetrical G-shaped bent structure provided by the invention has obvious influence on the increase of absorption rate and the expansion of bandwidth, and can realize the absorption rate of more than 90% in the frequency band range of 4.33GHz-12.42GHz, wherein the frequency band of more than 95% of the absorption rate is 4.81GHz-12.06 GHz. The structure designed by the invention realizes 96.6% of relative bandwidth, and has the following technical effects: symmetrical structure, ultrathin thickness, insensitive polarization and wide absorption frequency band.
The foregoing is merely an overview of the technical solutions of the present invention, and in order to make the technical solutions of the present invention more clearly understood, the present invention may be implemented according to the content of the description.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention. In the drawings:
FIG. 1 is a schematic view of an ultra-wideband absorber with a symmetrical G-shaped bending structure according to an embodiment of the present invention;
FIG. 2 is a top view of an upper level metal unit in accordance with one embodiment of the present invention;
FIG. 3 is a top view of a lower metal unit according to one embodiment of the present invention;
FIG. 4 is a graph of the absorption rate of an ultra-wideband absorber with a symmetrical G-shaped bending structure in the range of 4GHz to 12.5GHz in TE and TM polarizations in accordance with one embodiment of the invention;
FIG. 5(A) is a schematic diagram of the electric field distribution at 6.26GHz in accordance with the present invention;
FIG. 5(B) is a schematic diagram of the electric field distribution at 11.24GHz according to the present invention;
FIG. 6(A) is a schematic diagram of the surface current distribution at 6.26GHz in accordance with the invention;
FIG. 6(B) is a schematic diagram of the surface current distribution at 11.24GHz according to the present invention.
Detailed Description
First, an ultra-wideband absorber with a symmetric G-bend structure according to an embodiment of the present invention will be described with reference to fig. 1. As shown in fig. 1, the ultra-wideband absorber includes:
the metal unit comprises an upper layer metal unit, a medium substrate, a lower layer metal unit, an air layer and a metal reflecting plate;
the upper layer metal unit is attached to the upper surface of the dielectric substrate, and the lower layer metal unit is attached to the lower surface of the dielectric substrate;
the air layer is positioned between the medium substrate and the metal reflecting plate;
the upper-layer metal unit is connected with four G-shaped bent metal wires through four patch resistors with equal resistance values, and the G-shaped bent metal wires are obtained by bending the metal wires in the plane where the metal wires are located for four times in the same direction by 90 degrees;
and the lower-layer metal unit is connected with a metal square ring through eight patch resistors with equal resistance values.
In this embodiment, the length of the metal wire between the first bending point and the second bending point of the G-shaped bent metal wire is the first bending length, the length of the metal wire between the second bending point and the third bending point is the second bending length, the length of the metal wire between the third bending point and the fourth bending point is the third bending length, and the length of the metal wire between the fourth bending point and the tail end is the fourth bending length; the third bending length and the fourth bending length are both smaller than the first bending length and the second bending length.
In this embodiment, strong resonant absorption effect can be generated between the parallel metal short wires in the G-shaped bent metal wire; the size of the G-shaped bent metal wire influences the absorption frequency band of the wave absorber, and the wave absorber can work in the required frequency band by adjusting the size; the four patch resistors with equal resistance values are beneficial to improving the polarization insensitivity of the wave absorber.
In this embodiment, the four G-shaped bent metal lines are arranged around the same central point in a centrosymmetric manner.
In this embodiment, the G-shaped bent metal lines in the upper metal unit have a rotational symmetry.
In this embodiment, the four chip resistors are located at the center of the upper metal unit and are centrosymmetric by the bending starting points of the four G-shaped bending metal lines in the four chip resistor connection planes.
As shown in fig. 2, in this embodiment, the dielectric substrate is made of FR _4 material with a dielectric constant of 4.4, and the thickness is selected to be 0.6 mm; the thickness of the air layer is selected to be 8mm, the arrangement of the air layer can increase the low-frequency characteristic of the wave absorber, and simultaneously can widen the absorption bandwidth of the wave absorber.
As shown in fig. 3, the lower metal unit is connected to the metal resonance square ring through eight chip resistors, wherein each side of the square ring is symmetrically loaded with two chip resistors with equal resistance. The size of the square ring influences the low-frequency wave-absorbing frequency band, and the resistance value of the loaded chip resistor influences the absorption rate.
In this embodiment, the metal square ring of the lower metal unit is connected through eight chip resistors with equal resistance, and two chip resistors are symmetrically distributed on each side of the square ring.
In this embodiment, the metal square ring patch is located on the lower surface of the dielectric substrate. Two chip resistors are symmetrically loaded on each edge of the square ring structure, and the two chip resistors are symmetrically distributed on each edge of the metal square ring through the middle point of each edge.
The upper layer metal unit and the lower layer metal unit are respectively attached to the upper surface and the lower surface of the medium substrate, and the two metal units are not connected through structures such as metal through holes.
The dielectric substrate is of a square periodic structure, the period length is p, and the thickness of the substrate is h 1; the thickness of the air layer is h 2; the upper layer metal unit, the lower layer metal unit and the metal reflecting plate are all made of metal copper, and the thickness of the upper layer metal unit, the thickness of the lower layer metal unit and the thickness of the metal reflecting plate are h 0; in the upper-layer metal unit, the width of the G-shaped bent metal wire is w2, the first bending length and the second bending length are both a2, the third bending length and the fourth bending length are both a2/2, the gap distance between four metal patch units is s2, patch resistors are loaded at the gap distance, and the resistance value is R2; in the lower-layer metal unit, the side length of the metal square ring is a1, the width of the metal square ring is w1, the length of a gap between the eight loading chip resistors is s1, the resistance value of the gap is R1, and the distance between the two chip resistors on each side is d 1.
In one embodiment of the invention, the wave absorbers of different frequency bands are designed by adjusting the sizes of the side length a1 of the square ring and the length a2 of the bent metal patch; the wave absorbing effect of the wave absorber can be improved by adjusting the resistance values of the patch resistors R1 and R2.
Experimental verification
Table 1 shows specific parameter values as specific dimension values of an embodiment of an ultra-wideband absorber, and fig. 4 is a graph of the absorption rate of an electromagnetic absorber in TE and TM polarizations in the range of 4GHz to 12.5GHz provided by the embodiment of the present invention; as can be seen from FIG. 4, the invention can realize the absorption rate of more than 90% in the frequency band range of 4.33GHz-12.42GHz, wherein the frequency band with the absorption rate of more than 95% is 4.81GHz-12.06 GHz. The structure designed by the invention realizes 96.6% of relative bandwidth; the coincidence degree of the absorption curves is excellent in both the TE and TM polarization modes, which indicates that the wave absorber of the structure is not sensitive to polarization. Fig. 5(a) is a schematic diagram of the electric field distribution at 6.3GHz for an embodiment of the present invention, Phase 160 deg; fig. 5(B) is a schematic diagram of the electric field distribution at 11.2GHz, Phase 150 deg; fig. 6(a) is a schematic diagram of the surface current distribution at 6.3GHz, Phase 30 deg; fig. 6(B) is a schematic diagram of the surface current distribution at 11.2GHz, Phase 50 deg. for the example of the present invention.
Table 1 ultra wide band electromagnetic absorber structure size based on resistance loading
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The above embodiments are only used to illustrate the technical solutions of the present application, and not to limit the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions in the embodiments of the present application.
Claims (2)
1. The ultra-wideband wave absorber with the symmetrical G-shaped bending structure is characterized by comprising an upper-layer metal unit, a medium substrate, a lower-layer metal unit, an air layer and a metal reflecting plate;
the upper layer metal unit is attached to the upper surface of the dielectric substrate, and the lower layer metal unit is attached to the lower surface of the dielectric substrate;
the air layer is positioned between the medium substrate and the metal reflecting plate;
the upper-layer metal unit is connected with four G-shaped bent metal wires through four patch resistors with equal resistance values, and the G-shaped bent metal wires are obtained by bending the metal wires in the plane where the metal wires are located for four times in the same direction by 90 degrees;
the lower-layer metal unit is connected with a metal square ring through eight patch resistors with equal resistance values;
the length of a metal wire between a first bending point and a second bending point of the G-shaped bent metal wire is a first bending length, the length of the metal wire between the second bending point and a third bending point is a second bending length, the length of the metal wire between the third bending point and a fourth bending point is a third bending length, and the length of the metal wire between the fourth bending point and the tail end is a fourth bending length; the third bending length and the fourth bending length are both smaller than the first bending length and the second bending length;
the four G-shaped bent metal wires are arranged around the same central point in a central rotation symmetry mode;
the four chip resistors are positioned at the center of the upper layer metal unit and are in central symmetry;
the lower-layer metal unit is connected with the metal resonance square ring through eight chip resistors, and each side of the metal resonance square ring is symmetrically loaded with two chip resistors with equal resistance;
the upper layer metal unit and the lower layer metal unit are respectively attached to the upper surface and the lower surface of the medium substrate, and the two units are not connected through a metal through hole structure.
2. The ultra-wideband absorber with a symmetrical G-bend structure as claimed in claim 1, wherein the third bend length and the fourth bend length of the G-bend metal wire are half of the first bend length or the second bend length.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106785474A (en) * | 2016-12-12 | 2017-05-31 | 深圳Tcl数字技术有限公司 | Absorbent structure and electronic product |
| CN107508017A (en) * | 2017-08-10 | 2017-12-22 | 杭州电子科技大学 | A kind of band inhales molded breadth band frequency selecting structures and its application |
| CN107611622A (en) * | 2017-09-27 | 2018-01-19 | 中国人民解放军国防科技大学 | Double-side-frequency broadband wave absorber with controllable pass band |
| CN108615976A (en) * | 2018-06-15 | 2018-10-02 | 西安电子科技大学 | The restructural frequency-selective surfaces of dual-passband/Wide stop bands based on radome |
| CN109994817A (en) * | 2019-03-14 | 2019-07-09 | 重庆大学 | A kind of ultra wideband dual polarization antenna for base station |
| CN110165421A (en) * | 2019-06-06 | 2019-08-23 | 南京航空航天大学 | A kind of broadband suction wave frequency rate selection surface |
| CN110190407A (en) * | 2019-05-14 | 2019-08-30 | 南京航空航天大学 | A kind of broadband wave absorbing device and broadband wave absorbing device array based on resistive film |
| CN112448170A (en) * | 2020-11-27 | 2021-03-05 | 中国人民解放军空军工程大学 | P-S frequency band ultra-wideband wave-absorbing super-structure surface and low-scattering system |
| CN112928483A (en) * | 2021-01-20 | 2021-06-08 | 北京理工大学 | Broadband metamaterial wave absorber based on gap trapezoid structure |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017141856A1 (en) * | 2016-02-18 | 2017-08-24 | 日本電気株式会社 | Frequency selective surface, antenna, wireless communication device, and radar device |
| WO2018076192A1 (en) * | 2016-10-26 | 2018-05-03 | 深圳鲲鹏无限科技有限公司 | Antenna and wireless router |
| CN109004370B (en) * | 2018-07-24 | 2020-08-11 | 山西大学 | Three-frequency-band switchable metamaterial wave absorber/reflector |
-
2021
- 2021-06-10 CN CN202110649689.0A patent/CN113410655B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106785474A (en) * | 2016-12-12 | 2017-05-31 | 深圳Tcl数字技术有限公司 | Absorbent structure and electronic product |
| CN107508017A (en) * | 2017-08-10 | 2017-12-22 | 杭州电子科技大学 | A kind of band inhales molded breadth band frequency selecting structures and its application |
| CN107611622A (en) * | 2017-09-27 | 2018-01-19 | 中国人民解放军国防科技大学 | Double-side-frequency broadband wave absorber with controllable pass band |
| CN108615976A (en) * | 2018-06-15 | 2018-10-02 | 西安电子科技大学 | The restructural frequency-selective surfaces of dual-passband/Wide stop bands based on radome |
| CN109994817A (en) * | 2019-03-14 | 2019-07-09 | 重庆大学 | A kind of ultra wideband dual polarization antenna for base station |
| CN110190407A (en) * | 2019-05-14 | 2019-08-30 | 南京航空航天大学 | A kind of broadband wave absorbing device and broadband wave absorbing device array based on resistive film |
| CN110165421A (en) * | 2019-06-06 | 2019-08-23 | 南京航空航天大学 | A kind of broadband suction wave frequency rate selection surface |
| CN112448170A (en) * | 2020-11-27 | 2021-03-05 | 中国人民解放军空军工程大学 | P-S frequency band ultra-wideband wave-absorbing super-structure surface and low-scattering system |
| CN112928483A (en) * | 2021-01-20 | 2021-06-08 | 北京理工大学 | Broadband metamaterial wave absorber based on gap trapezoid structure |
Non-Patent Citations (1)
| Title |
|---|
| Compact and low-frequency broadband microwave metamaterial absorber based on meander wire structure loaded resistors;Qi Wang等;《AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS》;20200630;第120卷;全文 * |
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