CN113410346B - Deep ultraviolet LED chip with flip structure and preparation method thereof - Google Patents
Deep ultraviolet LED chip with flip structure and preparation method thereof Download PDFInfo
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- CN113410346B CN113410346B CN202110878292.9A CN202110878292A CN113410346B CN 113410346 B CN113410346 B CN 113410346B CN 202110878292 A CN202110878292 A CN 202110878292A CN 113410346 B CN113410346 B CN 113410346B
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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Abstract
The invention relates to a flip-chip structure deep ultraviolet LED chip and a preparation method thereof, wherein the LED chip comprises an LED epitaxial wafer, a p electrode (101) and an n electrode (102), the LED epitaxial wafer comprises an n-type semiconductor layer (204), a light emitting layer (205), an electron blocking layer (206) and a p-type semiconductor layer (207) which are sequentially overlapped, the p-type semiconductor layer (207) is provided with a p first structure surface (311), a p second structure surface (312) and a p third structure surface (313) which are not on the same horizontal plane, and tunneling structures (601) made of n-type semiconductor materials are arranged on the p first structure surface (311), the p second structure surface (312) and the p third structure surface (313). The absorption of p-type high-aluminum nitride to ultraviolet light can be reduced and the brightness can be improved by optimizing the structure of the p-type semiconductor layer; by adding a tunneling junction, the operating voltage can be reduced.
Description
Technical Field
The invention belongs to the technical field of semiconductor chip preparation, relates to an LED (light emitting diode) chip and a preparation method thereof, and particularly relates to a deep ultraviolet LED chip with a flip structure and a preparation method thereof.
Background
Semiconductor deep ultraviolet Light Emitting Diodes (LEDs) are a hotspot in the study of semiconductor optoelectronic devices. Compared with the mercury lamp used at present, the semiconductor deep ultraviolet light emitting diode has the advantages of high efficiency, long service life, small volume, environmental protection and the like, and has wide application prospect.
However, the conventional deep ultraviolet light emitting diode is affected by the difficulty in doping p-type high aluminum nitride in the LED chip, the absorption of ultraviolet light by the p-type semiconductor layer, and the like, so that the chip has low luminous efficiency and poor electrical property, and the wide application of the deep ultraviolet semiconductor is limited, and thus the conventional mercury lamp cannot be easily replaced at present.
In view of the above technical defects in the prior art, it is urgently needed to develop a novel flip-chip structure deep ultraviolet emitting LED chip and a preparation method thereof.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a deep ultraviolet LED chip with an inverted structure and a preparation method thereof, which can improve the luminous brightness of the deep ultraviolet LED chip and reduce the working voltage.
In order to achieve the above object, the present invention provides a flip-chip structure deep ultraviolet LED chip, which includes an LED epitaxial wafer, and a P-electrode and an n-electrode disposed on the LED epitaxial wafer, wherein the LED epitaxial wafer includes an n-type semiconductor layer, a light emitting layer, an electron blocking layer, and a P-type semiconductor layer stacked in this order, the P-electrode is disposed on the P-type semiconductor layer, and the n-electrode is disposed on the n-type semiconductor layer, and the flip-chip structure deep ultraviolet LED chip is characterized in that the P-type semiconductor layer has a P first structure surface, a P second structure surface, and a P third structure surface which are not on the same horizontal plane, and a tunneling junction made of an n-type semiconductor material is disposed on each of the P first structure surface, the P second structure surface, and the P third structure surface.
Preferably, the P-type semiconductor layer is composed of a Mg-doped P-AlGaN layer and a Mg-doped P-GaN layer grown on the Mg-doped P-AlGaN layer, and the P first structure surface is a surface of the Mg-doped P-GaN layer, and the P second structure surface and the P third structure surface are both located in the Mg-doped P-AlGaN layer.
Preferably, wherein the tunnel junction is in the shape of a cuboid or a cylinder.
Preferably, wherein the tunnel junction is made of indium tin oxide, gallium oxide or doped n-AlGaN.
Preferably, the flip-chip structure deep ultraviolet LED chip further includes a p-pad electrode connected to the p-electrode and an n-pad electrode connected to the n-electrode.
Preferably, the p-electrode, the n-electrode, the p-pad electrode and the n-pad electrode are formed of one or more of Cr, ti, ni, al, ag, pt, pd, au, rh, al alloy, ag alloy, pt alloy, pd alloy, au alloy and Rh alloy.
In addition, the invention also provides a preparation method of the flip-chip structure deep ultraviolet LED chip, which is characterized by comprising the following steps:
(1) Growing an AlN nucleating layer, an AlGaN buffer layer, an n-type semiconductor layer, a light-emitting layer, an electron blocking layer and a p-type semiconductor layer on the substrate in sequence;
(2) Etching part of the LED epitaxial wafer downwards to the n-type semiconductor layer to obtain an n-type semiconductor structure;
(3) Evaporating metal on the surface of the n-type semiconductor structure to obtain an n electrode;
(4) Etching the rest of the LED epitaxial wafer downwards to obtain a p-type semiconductor structure, wherein the p-type semiconductor structure comprises a p first structure surface, a p second structure surface and a p third structure surface which are not on the same horizontal plane;
(5) Etching a tunneling junction structure on the surface of the P-type semiconductor structure;
(6) Evaporating an n-type semiconductor material on the tunneling junction structure to obtain a tunneling junction;
(7) And evaporating metal NiAu on the surface of the p-type semiconductor structure to obtain the p-electrode.
Preferably, the P-type semiconductor layer is composed of a Mg-doped P-AlGaN layer and a Mg-doped P-GaN layer grown on the Mg-doped P-AlGaN layer, and when the P-type semiconductor layer is grown in the step (1), the Mg-doped P-AlGaN layer is grown on the electron blocking layer, and then the Mg-doped P-GaN layer is grown on the Mg-doped P-AlGaN layer.
Preferably, in the step (4), etching the remaining LED epitaxial wafer downward to obtain a p-type semiconductor structure specifically includes: etching downwards from the surface of part of the Mg-doped p-GaN layer for the first time until part of the Mg-doped p-AlGaN layer is etched away, so as to obtain the surface of the p third structure; performing second etching downwards from the surface of the partially unetched Mg-doped p-GaN layer until part of the Mg-doped p-AlGaN layer is etched, and enabling the depth of the second etching to be smaller than that of the first etching to obtain a p second structure surface; and the surface of the Mg-doped p-GaN layer which is not subjected to etching treatment is the surface of the p first structure.
Preferably, the method for preparing the flip-chip deep ultraviolet LED chip further comprises the following steps:
(8) And depositing a passivation layer on the whole.
Preferably, the method for manufacturing the flip-chip structure deep ultraviolet LED chip further comprises the following steps:
(9) Etching a p electrode through hole and an n electrode through hole on the surface of the passivation layer;
(10) And evaporating a p pad electrode on the p electrode through hole, and evaporating an n pad electrode on the n electrode through hole.
Compared with the prior art, the flip-chip structure deep ultraviolet LED chip and the preparation method thereof have one or more of the following beneficial technical effects:
1. the p-type semiconductor structure is optimized, the p-type semiconductor structure is set to be a three-layer structure and is a Mg-doped p-type semiconductor, wherein the p-GaN layer is reserved in the first structure layer, and the electrode structure is optimized; the second and third structural layers are etched to the Mg-doped p-AlGaN layer, so that the absorption of p-GaN to ultraviolet light is reduced, and the light power is improved.
2. The n-type semiconductor material is added on the surface of the optimized p-type semiconductor structure to form a tunneling junction structure, so that the voltage is optimized, and the working voltage is reduced.
3. The technology adopted by the preparation method is the common technology adopted in the preparation process of the LED chip, so that the preparation method does not need extra cost and technology and is simple.
Drawings
Fig. 1 is a schematic structural diagram of an LED epitaxial wafer of a flip-chip deep ultraviolet LED chip according to the present invention.
Fig. 2 is a schematic structural view after an n-electrode is formed on an LED epitaxial wafer.
Fig. 3 shows a schematic diagram of a process for forming a p-type semiconductor structure.
Fig. 4 is a schematic structural diagram of a p-type semiconductor structure having a tunnel junction.
Fig. 5 is a schematic diagram of the structure after forming a p-electrode on an LED epitaxial wafer and depositing a passivation layer.
Fig. 6 is a top view of the passivation layer after etching a p-electrode via and an n-electrode via, respectively.
Fig. 7 is a schematic top view of a deep ultraviolet LED chip of the flip-chip configuration of the present invention.
Detailed Description
The present invention is further described with reference to the following drawings and examples, which are not intended to limit the scope of the present invention.
The invention relates to a deep ultraviolet LED chip with a flip structure and a preparation method thereof, which can reduce the absorption of p-GaN to ultraviolet light, improve the light power, optimize the voltage and reduce the working voltage.
As shown in fig. 5 and 7, the flip-chip structure deep ultraviolet LED chip of the present invention includes an LED epitaxial wafer, and a p-electrode 101 and an n-electrode 102 disposed on the LED epitaxial wafer. The P-electrode 101 is disposed on the P-type semiconductor layer 207. The n-electrode 102 is disposed on the n-type semiconductor layer 204
As shown in fig. 1, the LED epitaxial wafer includes an n-type semiconductor layer 204, a light emitting layer 205, an electron blocking layer 206, and a p-type semiconductor layer 207, which are sequentially stacked.
Preferably, the LED epitaxial wafer includes a substrate 201, and an AlN nucleation layer 202, an AlGaN buffer layer 203, the n-type semiconductor layer 204, the light emitting layer 205, the electron blocking layer 206, and the p-type semiconductor layer 207 sequentially grown on the substrate 201.
The substrate 201 is preferably a sapphire substrate. Also, the n-type semiconductor layer 204 is preferably an n-AlGaN layer doped with Si.
Unlike the prior art in which the p-type semiconductor layer 207 is made of a single material, in the present invention, the p-type semiconductor layer 207 has a double-layer structure. Specifically, the P-type semiconductor layer 207 is composed of a Mg-doped P-AlGaN layer and a Mg-doped P-GaN layer grown on the Mg-doped P-AlGaN layer.
Also, in the present invention, as shown in fig. 3 to 5, the p-type semiconductor layer 207 has a p first structure surface 311, a p second structure surface 312, and a p third structure surface 313 which are not on the same horizontal plane.
Preferably, the p first structure surface 311 is a surface of the Mg doped p-GaN layer. The p second structure surface 312 and the p third structure surface 313 are both located in the Mg doped p-AlGaN layer.
Thus, by arranging the p-type semiconductor structure as a three-layer structure and all being Mg-doped p-type semiconductors, wherein the first structural layer retains the p-GaN layer, the electrode structure can be optimized; the second and third structural layers are etched to the Mg-doped p-AlGaN layer, so that the absorption of p-GaN to ultraviolet light can be reduced, and the light power is improved.
Further, in the present invention, as shown in fig. 4 and 5, the p first structure surface 311, the p second structure surface 312, and the p third structure surface 313 are each provided with a tunnel junction 601 made of an n-type semiconductor material.
Preferably, the tunnel junction 601 is made of indium tin oxide, gallium oxide or doped n-AlGaN.
In the present invention, the shape of the tunnel junction 601 is not limited. For example, the tunnel junction 601 may have a rectangular parallelepiped shape. Alternatively, the tunnel junction 601 may be a cylinder.
Therefore, the tunneling junction is formed by adding the n-type semiconductor material on the surface of the optimized p-type semiconductor structure, so that the voltage can be optimized, and the working voltage of the light-emitting diode can be reduced.
As shown in fig. 7, the flip-chip structure duv LED chip further includes a p-pad electrode 105 connected to the p-electrode 101 and an n-pad electrode 106 connected to the n-electrode 102. It is convenient to connect an external power source through the p-pad electrode 105 and the n-pad electrode 106, thereby supplying power thereto so as to emit light.
In the present invention, it is preferable that the p-electrode 101, the n-electrode 102, the p-pad electrode 105, and the n-pad electrode 106 be formed of one or more of Cr, ti, ni, al, ag, pt, pd, au, rh, al alloy, ag alloy, pt alloy, pd alloy, au alloy, and Rh alloy. Thus, the p-electrode 101, the n-electrode 102, the p-pad electrode 105, and the n-pad electrode 106 are more conductive.
The method for manufacturing the flip-chip structure deep ultraviolet LED chip of the present invention is described below, so that a person skilled in the art can manufacture the flip-chip structure deep ultraviolet LED chip according to the description of the present invention.
The preparation method of the flip-chip structure deep ultraviolet LED chip comprises the following steps:
1. and preparing the LED epitaxial wafer.
Similar to the prior art, in the preparation of the LED epitaxial wafer, it is necessary to provide a substrate 201 and sequentially grow an AlN nucleation layer 202, an AlGaN buffer layer 203, an n-type semiconductor layer 204, a light emitting layer 205, an electron blocking layer 206, and a p-type semiconductor layer 207 on the substrate 201.
Unlike the prior art, in the present invention, the p-type semiconductor layer 207 is composed of an Mg-doped p-AlGaN layer and an Mg-doped p-GaN layer grown on the Mg-doped p-AlGaN layer. Therefore, after the electron blocking layer 206 is grown, a Mg-doped p-AlGaN layer needs to be grown on the electron blocking layer 206, and then a Mg-doped p-GaN layer needs to be grown on the Mg-doped p-AlGaN layer, so as to finally form the LED epitaxial wafer shown in fig. 1.
2. And preparing an n-type semiconductor structure.
Before the n-type semiconductor structure is prepared, the prepared LED epitaxial wafer can be cleaned so as to remove impurities on the LED epitaxial wafer.
In the cleaning, cleaning may be performed using an inorganic solvent, an organic solvent (e.g., a sulfuric acid/hydrogen peroxide mixed solution, an isopropyl alcohol solution), or the like.
When the n-type semiconductor structure is prepared, a part of the LED epitaxial wafer can be etched from top to bottom by adopting methods such as dry etching and the like. As shown in fig. 2, during etching, the n-type semiconductor layer 204 needs to be etched, so as to obtain an n-type semiconductor structure.
It should be noted that, when etching, only the surface of the n-type semiconductor layer 204 may be etched, or a part of the n-type semiconductor layer 204 may be etched away, and only a part of the thickness of the n-type semiconductor layer 204 remains.
3. An n-electrode 102 is prepared.
In the present invention, the n-electrode 102 may be obtained by depositing metal on the surface of the n-type semiconductor structure by a metal deposition method.
For example, tiAl may be deposited on the surface of the n-type semiconductor structure using a metal evaporator to form the n-electrode 102 as shown in FIG. 2.
4. And preparing a p-type semiconductor structure.
When the p-type semiconductor structure is prepared, the part, which is not etched, of the LED epitaxial wafer can be etched downwards by adopting methods such as dry etching and the like, so that the p-type semiconductor structure is obtained.
As shown in fig. 3-5, in the present invention, the p-type semiconductor structure includes p first structure surface 311, p second structure surface 312, and p third structure surface 313 that are not on the same horizontal plane.
Specifically, as shown in fig. 3, when the p-type semiconductor structure is fabricated, a first etching may be performed from a surface of a portion of the Mg-doped p-GaN layer down until a portion of the Mg-doped p-AlGaN layer is etched away, so as to obtain the p third structure surface 313. And then, performing second etching from the surface of the partially unetched Mg-doped p-GaN layer downwards until part of the Mg-doped p-AlGaN layer is etched, and enabling the depth of the second etching to be smaller than that of the first etching, so as to obtain the p second structure surface 312. The surface of the Mg-doped p-GaN layer that is not subjected to etching processing is the p first structure surface 311.
In the invention, the p-type semiconductor structure is optimized, the p-type semiconductor structure is set to be a three-layer structure and is a Mg-doped p-type semiconductor, and the first structure layer keeps a p-GaN layer, so that the electrode structure is optimized; the second and third structural layers are etched to the Mg-doped p-AlGaN layer, so that the absorption of p-GaN to ultraviolet light is reduced, and the light power is improved.
5. And preparing a tunneling junction structure.
In the invention, a tunneling junction structure can be etched on the P-type semiconductor structure. That is, tunnel junction structures are etched on the p first structure surface 311, the p second structure surface 312, and the p third structure surface 313. For example, a tunnel junction structure may be obtained on the P-type semiconductor structure by a dry etching method.
And sixthly, preparing a tunneling junction.
In the present invention, an n-type semiconductor material may be evaporated on the tunnel junction structure to obtain the tunnel junction 601. Wherein, the n-type semiconductor material can be indium tin oxide, gallium oxide or doped n-AlGaN and the like.
By adding the n-type semiconductor material on the surface of the optimized p-type semiconductor structure to form a tunneling junction, the voltage can be optimized, and therefore the working voltage of the light-emitting diode can be reduced.
7. The p-electrode 101 is prepared.
In the preparation of the p-electrode 101, the p-electrode 101 may be obtained by depositing a metal on the surface of the p-type semiconductor structure. For example, a metal evaporator may be used to evaporate metal NiAu on the surface of the p-type semiconductor structure, thereby forming the p-electrode 101.
In addition, the preparation method of the flip-chip structure deep ultraviolet LED chip can further comprise the following steps:
8. a passivation layer 208 is deposited.
That is, after the p-electrode 101 is prepared, a passivation layer 208 is deposited as a whole. The passivation layer 208 may be a silicon oxide layer or the like. By depositing the passivation layer 208, the leakage caused by the contact between the p-semiconductor layer and the n-semiconductor layer can be avoided.
9. A p-electrode via hole 103 and an n-electrode via hole 104 are prepared.
As shown in fig. 6, a p-electrode via 103 and an n-electrode via 104, which are in contact with the pad electrode, may be etched on the surface of the passivation layer 208 by using a dry etching method. Wherein, the lower surfaces of the p-electrode through hole 103 and the n-electrode through hole 104 are the upper surfaces of the p-electrode 101 and the n-electrode 102, respectively.
10. A p-pad electrode 105 and an n-pad electrode 106 are prepared.
As shown in fig. 7, metal Au may be evaporated on the p-electrode via hole 103 and the n-electrode via hole 104 using a metal evaporator, respectively, to form a p-pad electrode 105 and an n-pad electrode 106.
After the p-electrode pad 105 and the n-pad electrode 106 are prepared, the manufacturing process of the flip-chip structure deep ultraviolet LED chip of the present invention is completed.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention, and do not limit the protection scope of the present invention. Those skilled in the art can make modifications or equivalent substitutions to the technical solution of the present invention without departing from the spirit and scope of the technical solution of the present invention.
Claims (9)
1. The utility model provides a flip-chip structure dark ultraviolet LED chip, its includes the LED epitaxial wafer and sets up P electrode (101) and n electrode (102) on the LED epitaxial wafer, the LED epitaxial wafer includes n type semiconductor layer (204), luminescent layer (205), electron barrier layer (206) that superpose in proper order
And a P-type semiconductor layer (207), the P-electrode (101) being disposed on the P-type semiconductor layer (207), the n-electrode (102) being disposed on the n-type semiconductor layer (204),
characterized in that the P-type semiconductor layer (207) has a P first structure surface (311), a P second structure surface (312) and a P third structure surface (313) which are not on the same horizontal plane,
tunneling junctions (601) made of n-type semiconductor materials are arranged on the P first structure surface (311), the P second structure surface (312) and the P third structure surface (313), the P type semiconductor layer (207) is composed of a Mg-doped P-AlGaN layer and a Mg-doped P-GaN layer growing on the Mg-doped P-AlGaN layer, the P first structure surface (311) is the surface of the Mg-doped P-GaN layer, and the P second structure surface (312) and the P third structure surface (313) are located in the Mg-doped P-AlGaN layer.
2. The flip-chip structure deep ultraviolet LED chip of claim 1, wherein the tunneling junction (601) is a cuboid or a cylinder.
3. The flip-chip structured deep ultraviolet LED chip of claim 2, characterized in that the tunnel junction (601) is made of indium tin oxide, gallium oxide or doped n-AlGaN.
4. The flip-chip structure deep ultraviolet LED chip according to claim 3, further comprising a P-pad electrode (105) connected to the P-electrode (101) and an n-pad electrode (106) connected to the n-electrode (102).
5. The flip-chip structure deep ultraviolet LED chip of claim 4, wherein the P electrode (101), the n electrode (102), the P pad electrode (105) and the n pad electrode (106)
Is formed by one or more of Cr, ti, ni, al, ag, pt, pd, au, rh, al alloy, ag alloy, pt alloy, pd alloy, au alloy and Rh alloy.
6. A preparation method of a deep ultraviolet LED chip with a flip structure is characterized by comprising the following steps:
(1) Growing an AlN nucleating layer (202), an AlGaN buffer layer (203), an n-type semiconductor layer (204), a light-emitting layer (205), an electron blocking layer (206) and a P-type semiconductor layer (207) on a substrate (201) in sequence; the P-type semiconductor layer (207) consists of an Mg-doped P-AlGaN layer and an Mg-doped P-GaN layer growing on the Mg-doped P-AlGaN layer, and when the P-type semiconductor layer (207) grows, the Mg-doped P-AlGaN layer grows on the electron blocking layer (206), and then the Mg-doped P-GaN layer grows on the Mg-doped P-AlGaN layer;
(2) Etching part of the LED epitaxial wafer downwards until the n-type semiconductor layer (204) is etched to obtain an n-type semiconductor structure;
(3) Evaporating metal on the surface of the n-type semiconductor structure to obtain an n electrode (102);
(4) Etching the rest of the LED epitaxial wafer downwards to obtain a P-type semiconductor structure, wherein the P-type semiconductor structure comprises a P first structure surface (311), a P second structure surface (312) and a P third structure surface (313) which are not on the same horizontal plane;
(5) Etching a tunneling junction structure on the surface of the P-type semiconductor structure;
(6) Evaporating an n-type semiconductor material on the tunneling junction structure to obtain a tunneling junction (601);
(7) And evaporating metal NiAu on the surface of the P-type semiconductor structure to obtain a P electrode (101).
7. The method for preparing the flip-chip deep ultraviolet LED chip according to claim 6, wherein the step (4) of etching the remaining LED epitaxial wafer downward to obtain the P-type semiconductor structure specifically comprises: performing first etching downwards from the surface of part of the Mg-doped P-GaN layer until part of the Mg-doped P-AlGaN layer is etched, so as to obtain a P third structure surface (313); performing second etching downwards from the surface of the partially unetched Mg-doped P-GaN layer until part of the Mg-doped P-AlGaN layer is etched, and enabling the depth of the second etching to be smaller than that of the first etching to obtain a P second structure surface (312); the surface of the Mg-doped P-GaN layer which is not subjected to etching treatment is the P first structure surface (311).
8. The method for preparing the flip-chip deep ultraviolet LED chip according to claim 7, further comprising the steps of:
(8) A passivation layer (208) is deposited over the body.
9. The method for preparing the flip-chip deep ultraviolet LED chip according to claim 8, further comprising the steps of:
(9) Etching a P electrode through hole (103) and an n electrode through hole (104) on the surface of the passivation layer (208);
(10) And a P pad electrode (105) is evaporated on the P electrode through hole (103), and an n pad electrode (106) is evaporated on the n electrode through hole (104).
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