CN1134010A - Method of making servo graph and separated magnetic track on film magnetic disk - Google Patents
Method of making servo graph and separated magnetic track on film magnetic disk Download PDFInfo
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- CN1134010A CN1134010A CN 96100313 CN96100313A CN1134010A CN 1134010 A CN1134010 A CN 1134010A CN 96100313 CN96100313 CN 96100313 CN 96100313 A CN96100313 A CN 96100313A CN 1134010 A CN1134010 A CN 1134010A
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Abstract
A method for generating servo pattern and discrete tracks on film diskette to provide tracking and locating information for magnetic head comprises mask exposure or direct exposure by laser spots to generate protecting film of servo pattern and discrete tracks on surface of diskette, removing unprotected magnetic area by backsputter or ion etching, and filling non-magnetic material.
Description
The present invention relates to the superelevation track density servo-information photoetching manufacturing method in computing machine external memory system field, it belongs to the information storage technology.
Traditional disc driver is to write the servo-information that certain encoded servo meets with at appointment magnetic as the guiding head position on the card of continuous medium.Because servo positioning information is to utilize the cephalic disc system of driver itself to write, the drift of rotation center, the cephalic disc flutter, the influence of dynamic errors such as thermal deformation, track density is difficult to improve.
In order to improve track density, a class is new, be suggested with the method for figure location, and in these class methods, the disk of certain servo figure that all will use a kind of photoetching in advance, the manufacturing of this disk just becomes the key that realizes this localization method.
Task of the present invention is to propose a kind of manufacture method of carving servo figure and separated magnetic track on thin film disk in advance.
Main points of the present invention are to use mask exposure or laser facula directly to expose and generate the diaphragm of servo figure and separated magnetic track annulus figure on magnetic disk surfaces; remove unprotected magnetosphere through backwash etching or ion etching again, and the filling nonmagnetic substance is used for the head position trace information with preparation.Servo figure is meant and meets the figure that head position requires to provide the location servo-information, and separated magnetic track annulus figure is meant that the ring of one group of magnetic material and the ring of non-magnetic material form one group of donut.Carry out penetrating to be on the point of on sputter or the ion etching equipment in order to the backwash that removes magnetic material or ion etching, use the radio-frequency sputtering instrument to fill nonmagnetic substance simultaneously, nonmagnetic substance at least should be contour with former magnetic material.Prepared servo figure and annulus should be concentric with the disk rotation subtly, and nonconcentricity should be less than 0.04 μ m.
Compared with prior art, the present invention has following advantage:
(1) can realize the litho pattern manufacturing of the above superelevation track density of 17000TPI magnetic recording, and the highest 4000TPI that can only reach of present photoetching technique;
(2) can make the complicated servo circular pattern of high track density;
(3) pattern line that is generated is meticulous, consistent, smooth, quality is good.
The manufacture craft FB(flow block) of litho pattern of the present invention as shown in Figure 1.
Manufacture method of the present invention is achieved by following technological process:
Fig. 1 litho pattern manufacture craft FB(flow block)
1. the design of litho pattern.According to selected encoded servo mode with to the requirement of the contained servo-information amount of litho pattern and the factors such as technical conditions of the equipment of inscription, design photoetching servo pattern;
2. the making of mask.The purpose of making mask is for non-etched area on the card is realized anti-etching protection.
Method of the present invention is that anti-to carve diaphragm be mask to form at the certain thickness photoresists with high resolving power and good etch resistance of 0 non-etched area coating.The production method of mask is as follows:
Adopt special-purpose pre-litho machine to realize the making of mask.Special-purpose pre-litho machine comes down to a polar coordinates draught machine online with computer system that resolution is high.The disc that scribbles photoresists is installed on the turning axle, and system controlling software converts the photoetching servo figure to the control photohead and moves control signal with the laser instrument switch, and exposure produces required mask pattern to photoresists according to certain rules to make laser beam.Special-purpose pre-litho machine is made mask following characteristics: (1) photohead can realize that polar coordinates move, and has improved the making precision of annular mask pattern; (2) the photoetching servo figure can use general higher level lanquage to draw on computers, and form standard interface with the control system of the pre-litho machine of special use, designed photoengraving pattern can be revised at any time, has strengthened the dirigibility and the versatility of design of photoetching servo figure and debugging; (3) deviation of mask pattern center and disc rotation center can effectively compensate.Reduced photoetching servo track offset; (4) this equipment has high bearing accuracy, can improve track density greatly.
3. the pre-service of disc.Mainly be cleaning and drying, change some state and the characteristic on its surface, make disc surface and photoresist that good adhesiveness be arranged disc.Its process is as follows: the greasy dirt and the dust that may exist on the disc cleaned in ultrasonic cleaner with anhydrous propanone and alcohol respectively, dry up or centrifuge dripping with clean nitrogen then, put it at last and under 200～300 ℃ of conditions, dry by the fire 30～50 minutes in the baking oven, then be cooled to room temperature to realize dried.
4. whirl coating.Whirl coating is to carry out on the photoresist spinner of special use.This is the film forming procedure of photoresist.To the whirl coating technological process the most basic requirement be glued membrane must be evenly, no decorative pattern, dust, impurity contamination etc.For guaranteeing certain exposure accuracy and etching precision, film thickness must be suitably.Its process characteristic and technological parameter are that glued membrane is blocked up, and the light wave percent of pass reduces, and graphics resolution reduces, lines etching precision variation; Glued membrane is too thin.The figure resolution will improve, and the lines etching precision is also high.But almost being index, pinhold density increases.Drip glue with static state, low speed is spared glue, makes photoresist spinner reach predetermined top speed whirl coating with very high acceleration then, and the glue surface uniformity is better.According to the performance of the Bp-212 type positive photoresist that is adopted and the result of repetition test, the even glue time is about 15 seconds, and even glue speed is 500 rev/mins; High speed whirl coating, its speed are 6000 rev/mins, and the time was about about 45 seconds.Time with 0.2 to 0.5 second reaches more than 80% of predetermined speed.Purpose is for edge effect and the normal solvent gasification that prevents that the glue surface tension from causing, stays film thickness to be about 1.5 μ m after whirl coating is finished.
5. process conditions and technological parameter before and after exposing and exposing.
(1) preceding baking: purpose is the solvent of eliminating in the photoresist, improve the compactness of glued membrane, increase the adhesiveness between glued membrane and disc surface, guarantee the reappearance of exposure and good imaging and the physical damnification when reducing etching when developing, through measuring, baking humidity is 90 ± 5 ℃ before best, and the preceding baking time is 15～20 minutes;
(2) exposure: with the light transmission mask plate of specific wavelength and intensity or directly shine dry-film resist selectively, make the photoresist generation chemical reaction that is subjected to the rayed part, acquisition is tied the positive of answering mutually with mask plate after developing.The exposure machine that adopts in the experiment is H94-17 type Φ 100 large area exposure machines.Strict location is aimed at the back photoresists is implemented to expose between mask plate and disc;
(3) develop: the disc through overexposure is placed developer solution, and the glued membrane of the light that will expose to the sun is removed.The most basic process conditions are slow in the developing process, and development time is elongated, can cause the swelling of glued membrane and the infiltration undercutting of pattern edge.To the Bp-212 positive photoresist, developer solution adopts 0.5%～0.7% NaOH solution, and developer temperatur is controlled at 22 ± 1 ℃, and development time is about 15 seconds;
(4) rinsing: the disc after will developing dries up or centrifuge dripping with clean nitrogen after soaking, rinse well with deionized water immediately.Its objective is and remove the developer solution remain in glued membrane or card and some granule foreign etc.;
(5) post bake: purpose is to remove remaining solvent, makes the glued membrane densification firm, and by heat cross-linking, further improves the adhesive capacity of glued membrane and card, the pin hole when reducing etching.The temperature and time that suitably strengthens the back baking helps to improve the adhesive capacity and the anti-etching ability of photoresist, but temperature is too high or overlong time, can cause the figure flow and the inconvenience of removing photoresist.General temperature remains on 130～140 ℃, and the time was controlled at 30 minutes.
6. litho pattern etching: require institute's needle drawing shape neat in edge, svelteness, graph transformation difference little, and to the magnetosphere not damaged of photoresist film and masking protection thereof.And the basic demand of filling is to make the card after the filling smooth, and nonmagnetic substance contacts firmly with the disc substrate, with magnetosphere handing-over property is preferably arranged.Adopt the etching of high-frequency sputtering and etching and the filling that plated film mechanism realizes litho pattern.
The current potential of adjusting the relative plasma of male or female can be realized two kinds of different technological processs of etching and filling of litho pattern.
The present invention has adopted the more complete homemade JG-PF3B type high-frequency sputtering instrument of function, and redesigned that worktable makes it continuously or the crawl rotation, enlarged can sputter area, improved the homogeneity of sputter.Reset magnetic field in addition, significantly improved sputter rate.
According to above analysis as seen, the manufacturing process of litho pattern is the plant complex process of link of a multiplex (MUX), influences each other mutual restriction between each link.In order to guarantee etching and filling quality, must strictly control each process procedure, choose optimal processing parameter.
7. etching and fill process parameter determines
The etching precision of litho pattern directly influences the servo positioning precision of system, and filling quality directly influences the magnetic head floats performance.Therefore, must strictly control etching and fill process parameter, to obtain best etching and filling quality.The parameter that influences the sputter effect is a lot, and the variation of the composition of any single factor such as base vacuum, gaseous tension, electrode separation, electrode shape, sputtering voltage, sputtered samples and temperature etc. all can exert an influence to the sputter result.
(1) determining of sputtering voltage:
Sputtering voltage is to influence one of etching effect most important parameters.It not only influences etch rate, energy utilization efficiency, the more important thing is the etching precision that influences figure.When sputtering voltage is chosen at the 1KV left and right sides, can guarantee certain etch rate, and svelteness, neat in edge, card is clean.
(2) air pressure determines
Air pressure is to influence another key factor of etching effect.Increase air pressure can improve etch rate within the specific limits and be reduced in the etching process because " pollution " that also exist some other residual gas to produce in the vacuum chamber except that the working gas argon gas.But too high air pressure can cause the increase of ion scattering, and side etching phenomenon aggravates thereupon.Thereby influence the etching precision of figure.In addition, panel surface can be because of there being differential of the arc light discharge phenomenon in etching process, and line shape lines occur and nick is cheated, and they will directly influence the etching homogeneity of card.Reduce air pressure, can suppress differential of the arc light discharge effect improving card etching precision.
The present invention has been chosen to be at sputtering voltage under the situation of U=1KV, and air pressure Par value is to obtain best sputter effect about 1.3Pa.
(3) etching and fill rate determines
For the etching depth of controlling litho pattern effectively and the filling thickness of nonmagnetic substance, sputtering voltage is 1KV, when operating air pressure was 1.3Pa, etching and fill rate and sputtering time were linear basically, etching that the sputter unevenness is brought and fill rate error ± about 15%.
(4) etching depth and filling thickness determines
The average etching depth of the present invention is controlled at about 0.2 μ m and is about to etching time and is controlled at 30～40 minutes (etching condition: Par=1.3Par, U=1KV), the relative magnetosphere maximum ga(u)ge 0.09 μ m of so average etching depth leaves bigger surplus.Help real-time control on the one hand, suitably strengthen the quality that etching depth helps plated film promptly to fill on the other hand.
Filling thickness is controlled at about 0.25 μ m and also is about to the filling time and was controlled at 20～25 minutes, makes filling thickness be slightly larger than etching depth.Make the cephalic disc collision that may occur in friction that magnetic head produces with disc surface in rise/stopping operating process and the flying magnetic head process can not damage magnetic medium.Nonmagnetic substance plays a part the protection magnetic medium.
(5) selection of packing material
Because in fact packing material got wear-resisting tectal effect, thus packing material should be harder, chemical is inactive, can be with the fine bonding of magnetosphere but with the inadherent material of magnetic head, high anti-intensity and not easily broken should be arranged simultaneously.Be used as sputter rhodium film, the SiO that tectal material mainly contains hard carbon, has the Cr enhancement layer at present
2, TiC, TiN, SiC, CrC
3, Al
2O
3Deng.The present invention has adopted SiO
2As packing material.
8. remove photoresist.After disc was finished etching and filling process, the photoetching that must will get anti-etching protective effect distinguished that glue obliterates, and these need are put into acetone soln with disc and soaked several branches, clock and gently wiping get final product.
Claims (4)
1. the manufacture method of servo figure and separated magnetic track on the thin film disk; it is characterized in that using mask exposure or laser facula directly to expose and on magnetic disk surface, generate the diaphragm of servo figure and separated magnetic track annulus figure; remove unprotected magnetosphere through backwash etching or ion etching again, and fill nonmagnetic substance is used for the head position trace information with preparation method.
2. according to the said manufacture method of claim 1, it is characterized in that servo figure is meant meets the figure that the location servo-information is provided that head position requires, and said separated magnetic track annulus figure is meant the ring of one group of magnetic material and one group of donut of the ring composition of non-magnetic material.
3. according to the said manufacture method of claim 1, its Te Fazheng is: carry out penetrating to be on the point of on sputter or the ion etching equipment in order to the backwash that removes magnetic material or ion etching, use the radio-frequency sputtering instrument to fill nonmagnetic substance simultaneously, nonmagnetic substance at least should be contour with former magnetic material.
4. according to the said manufacture method of claim 1, it is characterized in that: prepared servo figure and annulus should be concentric with the disk rotation subtly, and nonconcentricity should be less than 0.04 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 96100313 CN1134010A (en) | 1996-01-18 | 1996-01-18 | Method of making servo graph and separated magnetic track on film magnetic disk |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 96100313 CN1134010A (en) | 1996-01-18 | 1996-01-18 | Method of making servo graph and separated magnetic track on film magnetic disk |
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| Publication Number | Publication Date |
|---|---|
| CN1134010A true CN1134010A (en) | 1996-10-23 |
Family
ID=5116521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 96100313 Pending CN1134010A (en) | 1996-01-18 | 1996-01-18 | Method of making servo graph and separated magnetic track on film magnetic disk |
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|---|---|
| CN (1) | CN1134010A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1314005C (en) * | 2003-03-26 | 2007-05-02 | Tdk股份有限公司 | Manufacturing method of magnetic recording medium and magnetic recording medium |
| CN100382151C (en) * | 2005-03-04 | 2008-04-16 | 三星电子株式会社 | Method of manufacturing patterned recording medium |
| CN102931414A (en) * | 2012-11-01 | 2013-02-13 | 彩虹集团公司 | Preparation process for copper foil for lithium ion battery current collector |
-
1996
- 1996-01-18 CN CN 96100313 patent/CN1134010A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1314005C (en) * | 2003-03-26 | 2007-05-02 | Tdk股份有限公司 | Manufacturing method of magnetic recording medium and magnetic recording medium |
| CN100382151C (en) * | 2005-03-04 | 2008-04-16 | 三星电子株式会社 | Method of manufacturing patterned recording medium |
| CN102931414A (en) * | 2012-11-01 | 2013-02-13 | 彩虹集团公司 | Preparation process for copper foil for lithium ion battery current collector |
| CN102931414B (en) * | 2012-11-01 | 2015-03-11 | 彩虹集团公司 | Preparation process for copper foil for lithium ion battery current collector |
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