CN113394345B - 钙钛矿薄膜太阳能电池的制备方法 - Google Patents
钙钛矿薄膜太阳能电池的制备方法 Download PDFInfo
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- CN113394345B CN113394345B CN202110638507.XA CN202110638507A CN113394345B CN 113394345 B CN113394345 B CN 113394345B CN 202110638507 A CN202110638507 A CN 202110638507A CN 113394345 B CN113394345 B CN 113394345B
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- 239000010409 thin film Substances 0.000 title claims abstract description 46
- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- 239000010408 film Substances 0.000 claims abstract description 78
- 238000000034 method Methods 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 238000000576 coating method Methods 0.000 claims abstract description 42
- 239000002243 precursor Substances 0.000 claims abstract description 32
- 239000011248 coating agent Substances 0.000 claims abstract description 31
- 125000000962 organic group Chemical group 0.000 claims abstract description 26
- 230000008569 process Effects 0.000 claims abstract description 24
- RQQRAHKHDFPBMC-UHFFFAOYSA-L lead(ii) iodide Chemical compound I[Pb]I RQQRAHKHDFPBMC-UHFFFAOYSA-L 0.000 claims abstract description 23
- 230000005540 biological transmission Effects 0.000 claims abstract description 17
- 238000000151 deposition Methods 0.000 claims abstract description 14
- 239000011521 glass Substances 0.000 claims abstract description 13
- 230000031700 light absorption Effects 0.000 claims abstract description 11
- 238000005092 sublimation method Methods 0.000 claims abstract description 11
- 238000000137 annealing Methods 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000001704 evaporation Methods 0.000 claims description 19
- 230000008020 evaporation Effects 0.000 claims description 19
- 230000005525 hole transport Effects 0.000 claims description 14
- 238000000859 sublimation Methods 0.000 claims description 10
- 230000008022 sublimation Effects 0.000 claims description 10
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 9
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 238000012546 transfer Methods 0.000 claims description 4
- GSNUFIFRDBKVIE-UHFFFAOYSA-N DMF Natural products CC1=CC=C(C)O1 GSNUFIFRDBKVIE-UHFFFAOYSA-N 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 238000007738 vacuum evaporation Methods 0.000 claims description 3
- 239000007858 starting material Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 12
- 230000007774 longterm Effects 0.000 abstract description 5
- 238000007761 roller coating Methods 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 description 15
- 239000007791 liquid phase Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 6
- 238000010791 quenching Methods 0.000 description 6
- 230000000171 quenching effect Effects 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 150000004694 iodide salts Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
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- 238000002202 sandwich sublimation Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
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CN113394345A CN113394345A (zh) | 2021-09-14 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108026639A (zh) * | 2015-08-20 | 2018-05-11 | 香港科技大学 | 有机-无机钙钛矿材料及其光电器件的近空间升华制备 |
CN108428797A (zh) * | 2018-03-31 | 2018-08-21 | 南开大学 | 一种基于辊涂工艺的柔性大面积钙钛矿太阳电池的制备方法 |
CN109065727A (zh) * | 2018-07-24 | 2018-12-21 | 北京科技大学 | 一种钙钛矿太阳能电池的制备方法 |
CN110323338A (zh) * | 2019-08-02 | 2019-10-11 | 中国建材国际工程集团有限公司 | 一种钙钛矿薄膜太阳能电池的制备方法 |
CN111403547A (zh) * | 2020-03-11 | 2020-07-10 | 武汉理工大学 | 一种钙钛矿太阳能电池及其制备方法 |
CN112289932A (zh) * | 2020-10-29 | 2021-01-29 | 无锡极电光能科技有限公司 | 钙钛矿薄膜及其制备方法和应用 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US10403836B2 (en) * | 2013-11-12 | 2019-09-03 | The Regents Of The University Of California | Sequential processing with vapor treatment of thin films of organic-inorganic perovskite materials |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108026639A (zh) * | 2015-08-20 | 2018-05-11 | 香港科技大学 | 有机-无机钙钛矿材料及其光电器件的近空间升华制备 |
CN108428797A (zh) * | 2018-03-31 | 2018-08-21 | 南开大学 | 一种基于辊涂工艺的柔性大面积钙钛矿太阳电池的制备方法 |
CN109065727A (zh) * | 2018-07-24 | 2018-12-21 | 北京科技大学 | 一种钙钛矿太阳能电池的制备方法 |
CN110323338A (zh) * | 2019-08-02 | 2019-10-11 | 中国建材国际工程集团有限公司 | 一种钙钛矿薄膜太阳能电池的制备方法 |
CN111403547A (zh) * | 2020-03-11 | 2020-07-10 | 武汉理工大学 | 一种钙钛矿太阳能电池及其制备方法 |
CN112289932A (zh) * | 2020-10-29 | 2021-01-29 | 无锡极电光能科技有限公司 | 钙钛矿薄膜及其制备方法和应用 |
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Effective date of registration: 20240612 Address after: 518000 5th floor, east block, North Yihai Plaza, Chuangye Road, Nanshan District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Kaisheng Technology Engineering Co.,Ltd. Country or region after: China Patentee after: China Triumph International Engineering Co.,Ltd. Address before: 27th floor, Zhongji building, 2000 Zhongshan North Road, Putuo District, Shanghai Patentee before: China Triumph International Engineering Co.,Ltd. Country or region before: China |