CN113391377B - Resonance mode control method and control system, electronic device, and storage medium - Google Patents
Resonance mode control method and control system, electronic device, and storage medium Download PDFInfo
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- CN113391377B CN113391377B CN202110443474.3A CN202110443474A CN113391377B CN 113391377 B CN113391377 B CN 113391377B CN 202110443474 A CN202110443474 A CN 202110443474A CN 113391377 B CN113391377 B CN 113391377B
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Abstract
The invention discloses a resonant mode control method and system, electronic equipment and a storage medium, relates to the technical field of photonic crystals, and aims to enable a resonant mode to be controlled more flexibly and reduce the difficulty of applying a one-dimensional photonic crystal nano-beam cavity to operations such as multi-parameter sensing detection and the like under the condition of ensuring that the one-dimensional photonic crystal nano-beam cavity has a target resonant mode. The method comprises the following steps: and determining mode shift information according to the current resonance mode and the target resonance mode of the one-dimensional photonic crystal nano-beam cavity. And determining target structure information of the optical field local area of the one-dimensional photonic crystal nano-beam cavity according to the current resonance mode, the mode shift information and the current structure information of the one-dimensional photonic crystal nano-beam cavity. The target structure information includes at least structure information of the periodic pores. And adjusting the optical field local area according to the target structure information of the optical field local area so as to adjust the current resonance mode of the one-dimensional photonic crystal nano-beam cavity to a target resonance mode.
Description
Technical Field
The present invention relates to the field of photonic crystal technologies, and in particular, to a method and a system for operating a resonant mode, an electronic device, and a storage medium.
Background
Point defects are introduced on a perfect photonic crystal or photonic crystal waveguide structure, according to the energy band theoretical calculation of the photonic crystal, frequency points of one or more defect states are introduced into a photonic band gap, and an optical field of a specific frequency point is localized around the point defect, so that a basic model of a photonic crystal microcavity structure is formed. Wherein, the one-dimensional photonic crystal nano-beam cavity is formed by introducing defects on the one-dimensional photonic crystal waveguide. In practical applications, a stylized design method of a one-dimensional photonic crystal nano-beam cavity with a high Q value is usually adopted to design parameters of a micro-cavity structure, so as to obtain a one-dimensional photonic crystal nano-beam cavity meeting working requirements.
However, the one-dimensional photonic crystal nano beam cavity obtained by the nano beam microcavity programming design method has resonance modes located at two sides of the photonic band gap, and a large spectral range located in the photonic band gap cannot be fully utilized, so that the resonance mode is not flexibly manipulated, and the one-dimensional photonic crystal nano beam cavity is difficult to be applied to multi-parameter sensing detection and other operations with limited spectral range.
Disclosure of Invention
The invention aims to provide a resonant mode manipulation method, a resonant mode manipulation system, electronic equipment and a storage medium, which are used for enabling the resonant mode manipulation to be more flexible under the condition of ensuring that a one-dimensional photonic crystal nano beam cavity has a target resonant mode, reducing the difficulty of applying the one-dimensional photonic crystal nano beam cavity to operations such as multi-parameter sensing detection with a limited spectral range and the like and improving the spectral utilization rate.
In a first aspect, the present invention provides a method of resonant mode manipulation for manipulating a resonant mode of a one-dimensional photonic crystal nano-beam cavity. The method for manipulating the resonant mode includes:
determining mode offset information according to a current resonance mode and a target resonance mode of the one-dimensional photonic crystal nano-beam cavity;
determining target structure information of a light field local area of the one-dimensional photonic crystal nano-beam cavity according to the current resonance mode, the mode offset information and the current structure information of the one-dimensional photonic crystal nano-beam cavity; the target structure information of the light field local area at least comprises the structure information of the periodic holes positioned in the light field local area;
and adjusting the optical field local area according to the target structure information of the optical field local area so as to adjust the current resonance mode of the one-dimensional photonic crystal nano-beam cavity to a target resonance mode.
Compared with the prior art, the method for manipulating the resonance mode provided by the invention can determine the mode shift information according to the current resonance mode and the target resonance mode of the one-dimensional photonic crystal nano-beam cavity, namely can determine the shift condition of the target resonance mode relative to the current resonance mode. And then, according to the current resonance mode, the mode shift information and the current structure information of the one-dimensional photonic crystal nano-beam cavity, the target structure information of the optical field local area of the one-dimensional photonic crystal nano-beam cavity can be determined. Finally, the light field local area of the one-dimensional photonic crystal nano-beam cavity can be adjusted according to the target structure information of the light field local area, and then the current resonance mode of the one-dimensional photonic crystal nano-beam cavity can be adjusted to the target resonance mode. And after the optical field local area is adjusted at least according to the structural information of the periodic holes, the target resonance mode of the one-dimensional photonic crystal nano beam cavity is not limited by the position of the photonic band gap, namely the resonance wavelength of the target resonance mode can be located in the wavelength range of the photonic band gap, so that a larger spectral range located in the photonic band gap can be fully utilized, the resonance mode is more flexibly controlled, the difficulty of applying the one-dimensional photonic crystal nano beam cavity to multi-parameter sensing detection with a limited spectral range can be reduced, and the spectral utilization rate is improved.
In a second aspect, the present invention also provides an electronic device comprising a memory having a computer program stored thereon; a processor for executing a computer program in a memory for implementing the steps of the method for manipulation of a resonance mode as described in the first aspect or any one of the possible implementations of the first aspect.
In a third aspect, the present invention further provides a resonant mode steering system, which includes the electronic device described in the second aspect or any possible implementation manner of the second aspect, and a laser printing device communicatively connected to the electronic device.
In a fourth aspect, the present invention also provides a computer storage medium having stored therein instructions that, when executed, cause a method of manipulating a resonance mode as described in the first aspect or any one of the possible implementations of the first aspect to be performed.
The advantageous effects of the second aspect to the fourth aspect and the various implementations thereof in the present invention can refer to the advantageous effects of the first aspect and the various implementations thereof, and are not described herein again.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic structural diagram of a resonant mode steering system according to an embodiment of the present invention;
FIG. 2 is a flow chart of a method for operating a resonant mode according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a one-dimensional photonic crystal nano-beam cavity with a current resonance mode according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a one-dimensional photonic crystal nano-beam cavity with periodic holes removed according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a one-dimensional photonic crystal nano-beam cavity with a halved lattice constant of the tuning holes and a multiplied number of holes according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a one-dimensional photonic crystal nano-beam cavity after a periodic hole is shifted to the right by half a lattice constant according to an embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a one-dimensional photonic crystal nano-beam cavity after a periodic hole is shifted to the left by half a lattice constant according to an embodiment of the present invention;
FIG. 8 is a schematic structural diagram of a one-dimensional photonic crystal nano-beam cavity with an increased hole radius of an adjustment hole according to an embodiment of the present invention;
FIG. 9 is a schematic structural diagram of a one-dimensional photonic crystal nano-beam cavity with a reduced hole radius of an adjustment hole according to an embodiment of the present invention;
fig. 10 is a schematic diagram of a hardware structure of an electronic device according to an embodiment of the present invention.
Reference numerals: 10 is an electronic device, 11 is a mode adjusting device, and 12 is an information input device;
21 is a one-dimensional photonic crystal nano-beam cavity, 211 is a light field local area, 212 is a band gap local area, 2121 is a target hole, and 22 is an adjusting hole;
31 is an electronic device, 310 is a processor, 320 is a memory, 330 is a communication interface, 340 is a communication line, and 350 is a processor.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed. In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise. The meaning of "a number" is one or more unless specifically limited otherwise.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Photonic crystals are artificially synthesized materials consisting of periodically arranged dielectric materials with different dielectric constants. The perfect photonic crystal material has a Bragg scattering effect, and when the dielectric constant and the lattice constant satisfy a proper proportional relationship, the phenomenon that electromagnetic waves in a certain frequency band (photonic band gap) can not pass through the photonic crystal structure completely occurs, so that the control of photon transmission is realized. While the one-dimensional photonic crystal is generally composed of two dielectric materials arranged. The two dielectric materials have different dielectric constants and are periodically arranged in one dimension.
When point defects are introduced on a perfect photonic crystal or photonic crystal waveguide structure, according to the energy band theory calculation of the photonic crystal, one or more frequency points of defect states are introduced into a photonic band gap, and an optical field of a specific frequency point is localized around the point defect, so that a basic model of a photonic crystal microcavity structure is formed. The microcavity based on the one-dimensional photonic crystal waveguide structure is also called a one-dimensional photonic crystal nanobeam cavity, and is formed by introducing defects into the one-dimensional photonic crystal waveguide. In practical applications, the micro-cavity parameters are usually designed by a stylized design method of the one-dimensional photonic crystal nano-beam cavity with a high Q value, so as to obtain the one-dimensional photonic crystal nano-beam cavity meeting the working requirements.
However, the resonant modes of the one-dimensional photonic crystal nano beam cavity obtained by the nano beam microcavity programming design method are located at two sides of the photonic band gap, and a larger spectral range located in the photonic band gap cannot be fully utilized, so that the resonant mode is not flexible to manipulate, and the one-dimensional photonic crystal nano beam cavity is difficult to be applied to multi-parameter sensing detection and other operations with limited spectral range.
In order to solve the above technical problem, embodiments of the present invention provide a method and a system for manipulating a resonant mode, an electronic device, and a storage medium. The method for manipulating the resonance mode provided by the embodiment of the invention can enable the target resonance mode of the one-dimensional photonic crystal nano beam cavity to be free from the limitation of the position of the photonic band gap after the optical field local area is adjusted at least according to the structural information of the periodic hole, namely the resonance wavelength of the target resonance mode can be positioned in the photonic band gap, so that a larger spectral range positioned in the photonic band gap can be fully utilized, the manipulation of the resonance mode is more flexible, the difficulty of applying the one-dimensional photonic crystal nano beam cavity to multi-parameter sensing detection with a limited spectral range can be further reduced, and the spectral utilization rate is improved.
Fig. 1 is a schematic structural diagram illustrating a resonant mode steering system according to an embodiment of the present invention. Referring to fig. 1, the resonant mode steering system may include an electronic device 10, and a mode adjustment device 11 communicatively coupled to the electronic device 10.
Specifically, the electronic device may be any device having a storage and control function, such as a tablet, a computer, and the like, so as to implement a manipulation strategy of a resonance mode. The pattern adjustment device may comprise any semiconductor processing device capable of adjusting the light field local area in accordance with the target structure of the light field local area. For example: the mode adjustment apparatus may include a lithographic apparatus and an etching apparatus.
In some cases, as shown in FIG. 1, the resonant mode steering system may also include an information input device 12. The information input device 12 and the mode adjustment device 11 are both communicatively coupled to the electronic device 10 to enable data transfer. The communication method may be wireless communication or wired communication. The wireless communication can be based on networking technologies such as WiFi, ZigBee and the like. The wired communication may implement a communication connection based on a data line or a power line carrier. The communication interface may be a standard communication interface. The standard communication interface may be a serial interface or a parallel interface.
The information input device may be any input device capable of realizing an input function, such as a mouse and a keyboard, so as to send the information related to the target resonance mode to the electronic device.
As shown in fig. 2, an embodiment of the present invention provides a method for manipulating a resonant mode. The resonant mode manipulation method is used for manipulating the resonant mode of the one-dimensional photonic crystal nano-beam cavity. As shown in fig. 3, the one-dimensional photonic crystal nano-beam cavity 21 may include an optical field local region 211 and two band gap local regions 212. The optical field local region 211 is located between two band gap local regions 212. Specifically, the light field local region 211 has a periodic hole therein. The periodic holes may include a plurality of adjustment holes 22 of the same shape and size. The intervals between adjacent adjustment holes 22 are equal. The two band gap local regions 212 are symmetrical about the center line of the one-dimensional photonic crystal nanobeam cavity 21. Moreover, each band gap local region 212 is provided with a plurality of holes, and the radius of each hole gradually increases or gradually decreases along the transmission direction of photons. In addition, the shape of the adjustment hole 22 may be the same as the hole shape in which the hole is opened in the band gap local region 212.
The number of the adjustment holes included in the periodic holes, the size of the adjustment holes, and the interval between adjacent adjustment holes may affect the effective refractive index of the local region of the optical field, so that the effective refractive index may be determined according to information such as a current resonance mode and a target resonance mode, which will be described below, and the determination is not specifically limited herein. The current resonance mode of the one-dimensional photonic crystal nano-beam cavity can be set according to the current resonance mode and an actual application scene, and the current resonance mode is not specifically limited herein.
Of course, the specific structure of the one-dimensional photonic crystal nano-beam cavity may be any other structure that can be applied to the method for manipulating the resonance mode provided by the embodiment of the present invention, besides the above structure.
Specifically, the method for operating the resonant mode includes the following steps:
step 101: the electronic device determines mode shift information based on the current and target resonant modes of the one-dimensional photonic crystal nano-beam cavity.
In the practical application process, before manipulating the current resonance mode of the one-dimensional photonic crystal nano-beam cavity, the current resonance mode may be used as a design target, and a design method of the one-dimensional photonic crystal nano-beam cavity in the prior art (for example, a nano-beam cavity programming design method) is adopted to obtain a basic manipulation structure of the one-dimensional photonic crystal nano-beam cavity with the current resonance mode. After the design of the one-dimensional photonic crystal nano beam cavity is finished, the resonance wavelength and the optical field local position of the one-dimensional photonic crystal nano beam cavity in the current resonance mode are determined. Specifically, the optical field local positions of the resonance modes can be divided into low refractive index regions and high refractive index regions. The low refractive index region and the high refractive index region are relative terms. For example: when the one-dimensional photonic crystal nano-beam cavity is a silicon waveguide provided with air holes, the low refractive index area is an area where the air holes are located. And the high index region is the region where the waveguide is located.
For example, the mode shift information may include any information that can characterize the shift of the target resonant mode from the current resonant mode, such as the shift direction of the resonant wavelength and the shift amount of the resonant wavelength. The shift direction of the resonant wavelength is divided into a wavelength increasing direction and a wavelength decreasing direction. The shift amount of the resonance wavelength is used to indicate the magnitude of the shift of the resonance wavelength of the target resonance mode from the resonance wavelength of the current resonance mode. In this case, the other information can be accurately determined according to the mode shift information and any one of the current resonance mode and the target resonance mode, so that the shift condition can be accurately characterized when the mode shift information includes the shift direction of the resonance wavelength and the shift amount of the resonance wavelength, and the reliability of the manipulation method of the resonance mode is improved.
Further, for the current and target resonant modes of the one-dimensional photonic crystal nanobeam cavity, the absolute value of the difference between the resonant wavelength at the target resonant mode and the resonant wavelength at the current resonant mode may be about one-half of the photonic bandgap wavelength range. At this time, the difficulty of adjusting the resonance mode can be reduced, so that the current resonance mode of the one-dimensional photonic crystal nano-beam cavity can be adjusted to the target resonance mode subsequently. Wherein, the photonic band gap wavelength range is the photonic band gap wavelength range of the one-dimensional photonic crystal nano beam cavity with the current resonance mode.
It should be noted that the above-mentioned information about the current resonance mode and the target resonance mode of the one-dimensional photonic crystal nano-beam cavity may be stored in a memory included in the electronic device in advance, or may be transmitted to the electronic device through an information input device.
Wherein, under the condition that the mode shift information includes the shift direction of the resonance wavelength and the shift amount of the resonance wavelength, the determining the mode shift information according to the current resonance mode and the target resonance mode of the one-dimensional photonic crystal nano-beam cavity includes: step 101.1: the electronic equipment determines the shift direction of the resonance wavelength and the shift amount of the resonance wavelength in the mode shift information according to the resonance wavelength of the current resonance mode and the resonance wavelength of the target resonance mode.
Specifically, under the condition that the current resonance mode and the target resonance mode of the one-dimensional photonic crystal nano-beam cavity are known, the difference value between the resonance wavelength of the target resonance mode and the resonance wavelength of the current resonance mode can be obtained by subtracting the two resonance wavelengths. The difference is the offset of the resonant wavelength. The positive and negative of the difference is the shift direction of the resonance wavelength. When the resonant wavelength of the target resonant mode is the subtraction number and the difference value is a positive value, the resonant wavelength of the target resonant mode is shifted in a direction in which the wavelength is increased compared with the resonant wavelength of the current resonant mode. In contrast, when the resonance wavelength of the target resonance mode is a subtrahend and the difference is a negative value, the resonance wavelength of the target resonance mode is shifted in a direction in which the wavelength decreases compared to the resonance wavelength of the current resonance mode.
Step 102: the electronic equipment determines the target structure information of the optical field local area of the one-dimensional photonic crystal nano-beam cavity according to the current resonance mode, the mode shift information and the current structure information of the one-dimensional photonic crystal nano-beam cavity. The target structure information of the light field local region includes at least structure information of periodic holes located within the light field local region.
In an actual application process, as shown in fig. 4 to 9, when the structure of the periodic holes located in the optical field local region 211 is adjusted, the effective refractive index of the optical field local region 211 can be changed, and the size of the resonant wavelength of the current resonant mode of the one-dimensional photonic crystal nano-beam cavity 21 can be further changed. Meanwhile, in the case where the optical field local positions of the current resonance modes are different, the manner of changing the effective refractive index of the optical field local region 211 is also different. Based on this, the information of the current resonance mode, the mode shift information and the current structural information of the one-dimensional photonic crystal nano-beam cavity 21 can comprehensively represent the local position of the optical field and the change of the effective refractive index of the optical field local area 211, so that the target structural information of the optical field local area 211 can be determined. And then, the optical field local region 211 is adjusted according to the target structure information of the optical field local region 211, so that the current resonance mode of the one-dimensional photonic crystal nano-beam cavity 21 can be accurately adjusted to the target resonance mode.
Additionally, the current structural information of the one-dimensional photonic crystal nano-beam cavity may include any information that can characterize a current resonance mode associated with the one-dimensional photonic crystal nano-beam cavity. For example, the current structural information may include the current effective refractive index of the light field local region, and the aperture radius of the target aperture. The target hole is a hole which is positioned in the band gap local area and is closest to the center of the one-dimensional photonic crystal nano beam cavity. It should be understood from the foregoing description that when the effective refractive index of the local region of the optical field is changed, the resonant wavelength of the current resonant mode of the one-dimensional photonic crystal nano-beam cavity is changed. Based on this, under the condition that the current structure information includes the current effective refractive index of the optical field local area, the effective refractive index change information of the optical field local area is convenient to be determined according to the current resonance mode, the mode offset information and the current structure information, and further the target structure information of the optical field local area is convenient to be obtained.
For the structural information of the periodic hole, the size of the resonant wavelength of the current resonant mode can be changed due to the change of the effective refractive index of the optical field local region, so the structural information of the periodic hole may include any parameter which is specific to the structure of the periodic hole and can change the effective refractive index of the optical field local region. Exemplary structural information of the periodic holes may include adjusting hole radius of the holes, number of holes, hole period and lattice constant, and displacement between the center of the periodic holes and the center of the one-dimensional photonic crystal nanobeam cavity. Specifically, the hole radius, the number of holes, the hole period and the lattice constant of the adjusting holes can be adjusted by changing the proportion of the adjusting holes and the cavity in the light field local area. Meanwhile, the dielectric constant of the dielectric material in the adjusting hole is different from that of the dielectric material in the cavity, so that the effective refractive index of the optical field local area is different under the condition that the proportion of the adjusting hole to the cavity in the optical field local area is different. When the displacement between the center of the periodic hole and the center of the one-dimensional photonic crystal nano-beam cavity is adjusted, the effective refractive index of the area with low refractive index at the optical field local position of the current resonance mode can be increased, and the effective refractive index of the area with high refractive index at the optical field local position of the current resonance mode can be reduced. Meanwhile, under the condition that other factors are the same, the center of the periodic hole is translated leftwards or rightwards relative to the center of the one-dimensional photonic crystal nano-beam cavity, and the influence on the effective refractive index of the optical field local area is the same.
In one example, in the case described above, determining the target structure information of the optical field local region of the one-dimensional photonic crystal nano-beam cavity according to the current resonance mode, the mode shift information, and the current structure information of the one-dimensional photonic crystal nano-beam cavity may include the following steps:
step 102.1: the electronic device determines effective refractive index change information for the light field local region based on the current resonance mode, the mode shift information, and the current structural information. It will be appreciated that the magnitude of the resonant wavelength of the current resonant mode of the one-dimensional photonic crystal nanobeam cavity may be varied by adjusting the effective refractive index of the localized region of the optical field, as previously described. Meanwhile, under the condition that the local positions of the optical field of the current resonance mode are different, the mode of changing the effective refractive index of the local area of the optical field is also different. Based on this, on the premise that the current resonance mode, the mode shift information and the current structure information are known, the effective refractive index change information required by the optical field local area under the condition of being adjusted to the target resonance mode can be determined first, so that the periodic holes in the optical field local area can be adjusted subsequently according to the effective refractive index change information of the optical field local area.
Specifically, the effective refractive index change information of the optical field local area may include any parameter that can represent a change condition of the effective refractive index of the optical field local area in the target resonance mode relative to the effective refractive index of the optical field local area in the current resonance mode. For example: the effective refractive index change information of the optical field local region may include: the effective refractive index change direction and the effective refractive index change amount. The effective refractive index change direction is the direction from large to small of the effective refractive index in the optical field local area, or the direction from small to large of the effective refractive index in the optical field local area. The effective refractive index change amount is used to indicate the magnitude of the effective refractive index change in a localized region of the optical field. In this case, the determining the effective refractive index change information of the optical field local region according to the current resonance mode, the mode shift information and the current structure information may include the following steps:
step 102.1.1: and the electronic equipment determines the effective refractive index change direction according to the optical field local position of the current resonance mode and the shift direction of the resonance wavelength. Specifically, according to the difference between the optical field local position of the current resonance mode and the shift direction of the resonance wavelength, the determination of the effective refractive index change direction can be divided into the following four cases:
in the first case: under the condition that the local position of the optical field of the current resonance mode is determined to be a low-refractive-index area and the shift direction of the resonance wavelength is determined to be a wavelength increasing direction, determining the change direction of the effective refractive index to be the effective refractive index of the optical field local area from small to largeIn the direction of (a). It should be understood that, according to the bragg formula: a ═ λ 0 ÷2n eff . Wherein a is the lattice period of the target hole. Lambda [ alpha ] 0 Is the resonant wavelength. n is eff Is the effective refractive index of a localized region of the optical field. As can be seen from the above formula, the method for manipulating the resonant mode provided by the embodiment of the present invention only adjusts the local region of the optical field, but not adjusts the local region of the band gap, so that the lattice period of the target hole located in the local region of the band gap is not changed. Based on this, under the condition that the lattice period of the target hole is not changed, if the resonant wavelength shifts towards the wavelength increasing direction, the effective refractive index change direction is the direction from small to large of the effective refractive index of the optical field local area, so that the effective refractive index change direction can be accurately determined according to the optical field local position of the current resonant mode and the shift direction of the resonant wavelength.
In the second case: and under the condition that the optical field local position of the current resonance mode is determined to be a low-refractive-index area and the shift direction of the resonance wavelength is determined to be the wavelength reduction direction, determining the effective refractive index change direction to be the direction from large to small of the effective refractive index of the optical field local area.
In the third case: and under the condition that the optical field local position of the current resonance mode is determined to be a high-refractive-index area and the shift direction of the resonance wavelength is determined to be the wavelength increasing direction, determining the effective refractive index change direction to be the direction from small to large of the effective refractive index of the optical field local area.
In a fourth case: and under the condition that the optical field local position of the current resonance mode is determined to be a high-refractive-index region and the shift direction of the resonance wavelength is determined to be the wavelength reduction direction, determining the effective refractive index change direction to be the direction from large to small of the effective refractive index of the optical field local region.
It should be noted that the principle of determining the effective refractive index change direction in the second to fourth cases is the same as that provided in the first case, and is not described herein again.
Step 102.1.2: the electronic equipment determines the effective refractive index variation according to the resonance wavelength of the current resonance mode, the offset of the resonance wavelength and the current structural information.
It should be understood that, in the case that the current structural information includes the current effective refractive index of the optical field local region and the hole radius of the target hole, the bragg formula described above may be applied, and the target effective refractive index of the optical field local region in the target resonance mode may be determined according to the resonance wavelength of the current resonance mode and the offset of the resonance wavelength. And then subtracting the current effective refractive index from the target effective refractive index in the light field local area to obtain the effective refractive index variation.
Step 102.2: the electronic equipment determines the target structure information of the light field local area according to the light field local position of the current resonance mode, the effective refractive index change information of the light field local area and the current structure information.
In one example, in the case that the structural information of the periodic hole at least includes a hole radius of the adjustment hole, a number of holes, a hole period and a lattice constant, and a displacement between a center of the periodic hole and a center of the one-dimensional photonic crystal nano-beam cavity, the above determining the target structural information of the light field local region according to the light field local position of the current resonance mode, the effective refractive index change information of the light field local region, and the current structural information may be classified into the following four cases according to the difference between the light field local position and the effective refractive index change direction:
in the first case: as shown in fig. 8, when it is determined that the optical field local position of the current resonance mode is a low refractive index region and the effective refractive index change direction is a direction in which the effective refractive index of the optical field local region changes from large to small, the hole radius of each adjustment hole 22 is increased according to the effective refractive index change amount and the hole radius of the target hole 2121.
It should be understood that, in the case where the optical field local position of the current resonance mode is the low refractive index region, if the effective refractive index change direction of the optical field local region is a direction in which the effective refractive index of the optical field local region changes from large to small, the proportion of the low refractive index region in the optical field local region needs to be increased. The dielectric constant of the air filled in the adjusting holes is lower than that of the dielectric material of the cavity, so that the proportion of the low-refractive-index area in the optical field local area can be increased by increasing the hole radius of each adjusting hole.
It should be noted that, as described above, the plurality of adjustment holes included in the periodic hole have the same hole shape and the same hole radius, and therefore, increasing the hole radius of each adjustment hole is to increase the hole radius of each adjustment hole by the same amount. And the amount of change in the aperture radius may be determined based on the effective index change amount and the aperture radius of the target aperture. For example: when the effective refractive index variation is small, the hole radius of the adjusting hole is larger than that of the target hole, and the difference between the hole radius and the target hole is not large. And when the effective refractive index variation is larger, the hole radius of the adjusting hole is larger than that of the target hole, and the difference between the hole radius of the adjusting hole and the hole radius of the target hole is larger.
In the second case: as shown in fig. 4, 6, 7, and 9, when it is determined that the optical field local position of the current resonance mode is a low refractive index region and the effective refractive index change direction is a direction in which the effective refractive index of the optical field local region changes from small to large, the hole radius of each adjustment hole 22 is reduced, the number of holes of the adjustment holes 22 is reduced, or the displacement between the center of the periodic hole and the center of the one-dimensional photonic crystal nano-beam cavity 21 is adjusted, according to the effective refractive index change amount and the hole radius of the target hole 2121.
In the third case: as shown in fig. 5, 6, and 7, when it is determined that the optical field local position of the current resonance mode is a high refractive index region and the effective refractive index change direction is a direction in which the effective refractive index of the optical field local region changes from large to small, the number of holes of the adjustment hole 22 is increased, the hole period of the adjustment hole 22 is shortened, or the displacement between the center of the periodic hole and the center of the one-dimensional photonic crystal nano-beam cavity 21 is adjusted, according to the effective refractive index change amount and the hole radius of the target hole 2121.
In a fourth case: and under the condition that the optical field local position of the current resonance mode is determined to be a high-refractive-index area and the effective refractive index change direction is the direction from small to large of the effective refractive index of the optical field local area, increasing the hole period of the adjusting hole according to the effective refractive index change and the hole radius of the target hole.
It should be noted that the determination process of the second to fourth cases is the same as the determination process of the first case in principle, and is not described herein again. Further, when the adjustment holes can be adjusted in a plurality of ways, the plurality of ways may be employed simultaneously, or only any one or a combination of several of the plurality of ways may be employed. For example: in the second case, the hole radius of each adjusting hole may be reduced, the number of holes of the adjusting holes may be reduced, or the displacement between the center of the periodic hole and the center of the one-dimensional photonic crystal nano-beam cavity may be adjusted, and any two of the three modes may be adopted, or the three modes may be adopted at the same time, so that the current resonance mode is adjusted to the target resonance mode.
Step 103: and the mode adjusting equipment adjusts the optical field local area according to the target structure information of the optical field local area so as to adjust the current resonance mode of the one-dimensional photonic crystal nano-beam cavity to a target resonance mode.
Illustratively, the periodic holes in the optical field local area may be adjusted by photolithography and etching processes according to the target structure information of the optical field local area to adjust the current resonance mode of the one-dimensional photonic crystal nano-beam cavity to the target resonance mode.
As can be seen from the above, the method for manipulating a resonant mode according to the embodiments of the present invention may first determine mode shift information according to a current resonant mode and a target resonant mode of a one-dimensional photonic crystal nano-beam cavity, that is, may determine a shift of the target resonant mode from the current resonant mode. And then, according to the current resonance mode, the mode shift information and the current structure information of the one-dimensional photonic crystal nano-beam cavity, the target structure information of the optical field local area of the one-dimensional photonic crystal nano-beam cavity can be determined. Finally, the light field local area of the one-dimensional photonic crystal nano-beam cavity can be adjusted according to the target structure information of the light field local area, and then the current resonance mode of the one-dimensional photonic crystal nano-beam cavity can be adjusted to the target resonance mode. And after the optical field local area is adjusted at least according to the structural information of the periodic holes, the target resonance mode of the one-dimensional photonic crystal nano beam cavity is not limited by the position of the photonic band gap, namely the resonance wavelength of the target resonance mode can be located in the wavelength range of the photonic band gap, so that a larger spectral range located in the photonic band gap can be fully utilized, the resonance mode is more flexibly controlled, the difficulty of applying the one-dimensional photonic crystal nano beam cavity to multi-parameter sensing detection requiring a limited spectral range can be reduced, and the spectral utilization rate is improved.
The above description mainly introduces the solutions provided by the embodiments of the present invention from the perspective of electronic devices. It is understood that the electronic device comprises corresponding hardware structures and/or software modules for performing the respective functions in order to realize the above-mentioned functions. Those of skill in the art will readily appreciate that the present invention can be implemented in hardware or a combination of hardware and computer software, with the exemplary elements and algorithm steps described in connection with the embodiments disclosed herein. Whether a function is performed as hardware or computer software drives hardware depends upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention.
In the embodiment of the present invention, the electronic device and the like may be divided into functional modules according to the above method examples, for example, each functional module may be divided corresponding to each function, or two or more functions may be integrated into one processing module. The integrated module can be realized in a hardware mode, and can also be realized in a software functional module mode. It should be noted that, the division of the modules in the embodiment of the present invention is schematic, and is only a logic function division, and there may be another division manner in actual implementation.
Fig. 10 is a schematic diagram illustrating a hardware structure of an electronic device according to an embodiment of the present invention. Referring to fig. 10, the electronic device includes a processor 310 and a memory 320.
Optionally, as shown in fig. 10, the electronic device 31 may further include a communication interface 330 and a communication line 340. Communication interface 330 is coupled to processor 310. Communication link 340 may include a path to communicate information between the aforementioned components.
As shown in fig. 10, the processor 310 may be a general processing unit (CPU), a microprocessor, an application-specific integrated circuit (ASIC), or one or more ics for controlling the execution of programs according to the present invention. The communication interface 330 may be one or more. The communication interface 330 may use any transceiver or the like for communicating with other devices or communication networks.
As shown in fig. 10, the memory 320 is used for storing computer instructions for implementing the inventive arrangements and is controlled by the processor 310 for execution. Processor 310 is configured to execute computer instructions stored in memory 320 to implement the method for manipulating resonant modes provided by embodiments of the present invention.
As shown in fig. 10, the memory 320 may be a read-only memory (ROM) or other types of static storage devices that can store static information and instructions, a Random Access Memory (RAM) or other types of dynamic storage devices that can store information and instructions, an electrically erasable programmable read-only memory (EEPROM), a compact disc read-only memory (CD-ROM) or other optical disc storage, optical disc storage (including compact disc, laser disc, optical disc, digital versatile disc, blu-ray disc, etc.), magnetic disk storage media or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and that can be accessed by a computer, but is not limited to such. The memory 320 may be separate and coupled to the processor 310 via a communication line 340. The memory 320 may also be integrated with the processor 310.
Optionally, the computer instructions in the embodiment of the present invention may also be referred to as application program codes, which is not specifically limited in this embodiment of the present invention.
In one implementation, for one embodiment, as shown in FIG. 10, processor 310 may include one or more CPUs, such as CPU0 and CPU1 of FIG. 10.
In one implementation, as shown in fig. 10, the electronic device 31 may include a plurality of processors 310, such as the processor 310 and the processor 350 in fig. 10. Each of these processors may be a single core processor or a multi-core processor.
Embodiments of the present invention also provide a computer storage medium, in which instructions are stored, and when the instructions are executed, the method for manipulating a resonant mode provided in the above embodiments is executed.
In the above embodiments, the implementation may be wholly or partially realized by software, hardware, firmware, or any combination thereof. When implemented in software, it may be implemented in whole or in part in the form of a computer program product. The computer program product described above includes one or more computer programs or instructions. When the above-described computer program or instructions are loaded and executed on a computer, the procedures or functions described in the embodiments of the present invention are wholly or partially performed. The computer may be a general purpose computer, a special purpose computer, a computer network, a terminal, a user device, or other programmable apparatus. The computer program or instructions may be stored on a computer storage medium or transmitted from one computer storage medium to another, for example, from one website, computer, server, or data center to another website, computer, server, or data center by wire or wirelessly. The computer storage media may be any available media that can be accessed by a computer or a data storage device such as a server, data center, etc. that integrates one or more available media. The usable medium may be a magnetic medium, such as a floppy disk, a hard disk, a magnetic tape; or optical media such as Digital Video Disks (DVDs); it may also be a semiconductor medium, such as a Solid State Drive (SSD).
While the invention has been described in conjunction with specific features and embodiments thereof, it will be evident that various modifications and combinations can be made thereto without departing from the spirit and scope of the invention. Accordingly, the specification and figures are merely exemplary of the invention as defined in the appended claims and are intended to cover any and all modifications, variations, combinations, or equivalents within the scope of the invention. It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A method of resonant mode manipulation for manipulating the resonant mode of a one-dimensional photonic crystal nano-beam cavity; the method of manipulating the resonant mode includes:
determining mode offset information according to the current resonance mode and the target resonance mode of the one-dimensional photonic crystal nano-beam cavity;
determining target structure information of a light field local area of the one-dimensional photonic crystal nano-beam cavity according to the current resonance mode, the mode shift information and the current structure information of the one-dimensional photonic crystal nano-beam cavity; the target structure information of the light field local area at least comprises the structure information of periodic holes positioned in the light field local area;
and adjusting the optical field local area according to the target structure information of the optical field local area so as to adjust the current resonance mode of the one-dimensional photonic crystal nano-beam cavity to the target resonance mode.
2. The method of manipulating a resonance mode according to claim 1, wherein the mode shift information includes a shift direction of a resonance wavelength and a shift amount of the resonance wavelength;
determining mode shift information according to the current resonance mode and the target resonance mode of the one-dimensional photonic crystal nano-beam cavity, wherein the determining comprises the following steps:
and determining the shift direction of the resonance wavelength and the shift amount of the resonance wavelength in the mode shift information according to the resonance wavelength of the current resonance mode and the resonance wavelength of the target resonance mode.
3. The method of manipulating a resonance mode according to claim 2, wherein said determining target structure information for an optical field local region of the one-dimensional photonic crystal nano-beam cavity from the current resonance mode, the mode shift information, and current structure information of the one-dimensional photonic crystal nano-beam cavity comprises:
determining effective refractive index change information of the optical field local area according to the current resonance mode, the mode shift information and the current structure information;
and determining the target structure information of the optical field local area according to the optical field local position of the current resonance mode, the effective refractive index change information of the optical field local area and the current structure information.
4. The method of manipulating a resonant mode according to claim 3, wherein the one-dimensional photonic crystal nano-beam cavity further comprises two band gap local regions; the optical field local area is positioned between the two band gap local areas;
the periodic holes comprise a plurality of adjusting holes with the same shape and size; the intervals between the adjacent adjusting holes are equal;
the current structural information comprises a current effective refractive index of the light field local region and a hole radius of a target hole; the target hole is a hole which is positioned in the band gap local area and is closest to the center of the one-dimensional photonic crystal nano beam cavity; the hole shape of the target hole is the same as the hole shape of the plurality of adjustment holes;
the structural information of the periodic holes comprises the hole radius, the hole number, the hole period and the lattice constant of the adjusting holes and the displacement between the center of the periodic holes and the center of the one-dimensional photonic crystal nano-beam cavity;
the effective refractive index change information of the optical field local region comprises: an effective refractive index change direction and an effective refractive index change amount; the effective refractive index change direction is the direction from large to small of the effective refractive index of the optical field local area, or the direction from small to large of the effective refractive index of the optical field local area.
5. The method of manipulating a resonance mode according to claim 4, wherein said determining effective refractive index change information of the optical field local region from the current resonance mode, the mode shift information and the current structure information comprises:
determining the effective refractive index change direction according to the optical field local position of the current resonance mode and the shift direction of the resonance wavelength;
and determining the effective refractive index variation according to the resonance wavelength of the current resonance mode, the offset of the resonance wavelength and the current structure information.
6. The method according to claim 4, wherein when the local position of the optical field in the current resonance mode is determined as a low refractive index region and the shift direction of the resonance wavelength is a wavelength increasing direction, the effective refractive index change direction is determined as a direction in which the effective refractive index in the local region of the optical field increases from small to large;
under the condition that the optical field local position of the current resonance mode is determined to be a low-refractive-index area and the offset direction of the resonance wavelength is determined to be a wavelength reduction direction, determining the effective refractive index change direction to be the direction from large to small of the effective refractive index of the optical field local area;
under the condition that the optical field local position of the current resonance mode is determined to be a high-refractive-index area and the offset direction of the resonance wavelength is determined to be a wavelength increasing direction, determining the effective refractive index change direction to be the direction from small to large of the effective refractive index of the optical field local area;
and under the condition that the optical field local position of the current resonance mode is determined to be a high-refractive-index area and the shift direction of the resonance wavelength is determined to be a wavelength reduction direction, determining the effective refractive index change direction to be the direction from large to small of the effective refractive index of the optical field local area.
7. The method for manipulating the resonance mode according to claim 4 or 5, wherein the determining the target structure information of the optical field local region according to the optical field local position of the current resonance mode, the effective refractive index change information of the optical field local region, and the current structure information comprises:
under the condition that the optical field local position of the current resonance mode is determined to be a low-refractive-index area and the effective refractive index change direction is the direction from large to small of the effective refractive index of the optical field local area, increasing the hole radius of each adjusting hole according to the effective refractive index change and the hole radius of the target hole;
under the condition that the optical field local position of the current resonance mode is determined to be a low-refractive-index area and the effective refractive index change direction is the direction from small to large of the effective refractive index of the optical field local area, reducing the hole radius of each adjusting hole, reducing the number of the adjusting holes or adjusting the displacement between the center of the periodic hole and the center of the one-dimensional photonic crystal nano-beam cavity according to the effective refractive index change and the hole radius of the target hole;
under the condition that the optical field local position of the current resonance mode is determined to be a high-refractive-index area and the effective refractive index change direction is the direction from large to small of the effective refractive index of the optical field local area, increasing the number of the adjusting holes, shortening the hole period of the adjusting holes or adjusting the displacement between the center of the periodic hole and the center of the one-dimensional photonic crystal nano-beam cavity according to the effective refractive index change and the hole radius of the target hole;
and under the condition that the optical field local position of the current resonance mode is determined to be a high-refractive-index area and the effective refractive index change direction is the direction from small to large of the effective refractive index of the optical field local area, increasing the hole period of the adjusting hole according to the effective refractive index change and the hole radius of the target hole.
8. An electronic device, comprising:
a memory having a computer program stored thereon;
a processor for executing the computer program in the memory to carry out the steps of the method of manipulation of a resonant mode of any of claims 1 to 7.
9. A resonant mode steering system, comprising:
the electronic device of claim 8;
and a mode adjustment device in communicative connection with the electronic device.
10. A computer storage medium having stored therein instructions that, when executed, cause the method of manipulation of a resonant mode of any of claims 1 to 7 to be performed.
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