CN113381590A - Drive circuit containing multistage NPN transistor - Google Patents
Drive circuit containing multistage NPN transistor Download PDFInfo
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- CN113381590A CN113381590A CN202010156842.1A CN202010156842A CN113381590A CN 113381590 A CN113381590 A CN 113381590A CN 202010156842 A CN202010156842 A CN 202010156842A CN 113381590 A CN113381590 A CN 113381590A
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- 238000000034 method Methods 0.000 description 12
- 230000010354 integration Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
Abstract
The invention provides a drive circuit containing a multistage NPN transistor, comprising: the base electrode of each NPN transistor is respectively led out a control leading-out pin, the control leading-out pin corresponding to each NPN transistor is connected with the base electrode switching device corresponding to each NPN transistor, each base electrode switching device is connected with the logic circuit, and each base electrode switching device is processed in a manner of being connected with a reference. According to the invention, the multi-stage NPN transistor can be driven, the turn-off delay of the multi-stage NPN transistor is short, and the switching loss is greatly reduced.
Description
Technical Field
The invention relates to the technical field of circuits, in particular to a driving circuit comprising multistage NPN transistors.
Background
In the prior art, the turn-off delay of each triode of the darlington triode driving circuit is t1 and t2 respectively, wherein when the NPN triode Q1 is turned off, the base-collector charge can be discharged through the K1, but the NPN triode Q2 can only be discharged through the series resistor and then through the K1, so that the t2 is far greater than the t1, the turn-off delay of the whole darlington triode driving circuit is large, large switching loss is generated, and the application of the darlington triode driving circuit in a high-power switching power supply is limited.
Disclosure of Invention
The invention mainly aims to provide a driving circuit comprising a multistage NPN transistor, and aims to solve the technical problems that a Darlington triode driving circuit in the prior art is large in turn-off delay and large in switching loss.
In order to achieve the above object, an embodiment of the present invention provides a driving circuit including a multi-stage NPN transistor, including:
the emitter of the front NPN transistor in two adjacent NPN transistors is connected with the base of the rear NPN transistor, the collectors of all the NPN transistors are connected together and lead out a first leading-out pin, the emitter of the rearmost NPN transistor leads out a second leading-out pin, the base of each NPN transistor leads out a control leading-out pin, the control leading-out pin corresponding to each NPN transistor is connected with the base switch device corresponding to each NPN transistor, each base switch device is connected with the logic circuit, and each base switch device is processed in a manner of being connected with reference.
Optionally, the logic circuit is configured to output a turn-off signal, and the turn-off signal is configured to turn off all the base switching devices.
Optionally, the logic circuit is further configured to output a close signal, where the close signal is used to close a base switching device corresponding to the close signal.
Optionally, when the base switch device is closed, the charge stored in the base-collector of the NPN transistor corresponding to the base switch device in the closed state is discharged through the base switch device in the closed state.
In the present invention, a driving circuit including a multi-stage NPN transistor includes: the emitter of the front NPN transistor in two adjacent NPN transistors is connected with the base of the rear NPN transistor, the collectors of all the NPN transistors are connected together and lead out a first leading-out pin, the emitter of the rearmost NPN transistor leads out a second leading-out pin, the base of each NPN transistor leads out a control leading-out pin, the control leading-out pin corresponding to each NPN transistor is connected with the base switch device corresponding to each NPN transistor, each base switch device is connected with the logic circuit, and each base switch device is processed in a manner of being connected with reference. The invention can realize the following beneficial effects:
1. more stages of NPN transistors can be driven;
2. the turn-off delay of the N (N is more than or equal to 2) grade NPN transistor is the same as or similar to that of a single NPN transistor;
3. high-density integration of N (N is more than or equal to 2) grade NPN transistors can be realized; a resistor device is not needed, so that the production difficulty of the process and the multi-stage NPN structure is reduced;
4. the driving circuit is simple, and can be driven by using a low-voltage process with low cost, so that the driving cost is reduced; the multi-stage NPN transistor circuit can be IP-based, and can be driven by only one driving circuit, so that the research and development period is greatly shortened;
5. the multi-stage NPN transistor is driven to be short in turn-off delay, switching loss is greatly reduced, efficiency is improved, safety performance of more stages of NPN transistors is improved, and the multi-stage NPN transistor has great positive significance in popularization and popularization of the multi-stage NPN transistors with high power, high density, high integration and low cost.
Drawings
FIG. 1 is a schematic diagram of a Darlington transistor driving circuit in the prior art;
fig. 2 is a schematic structural diagram of a driving circuit including a multi-stage NPN transistor according to an embodiment of the present invention.
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a darlington transistor driving circuit in the prior art. As can be seen from fig. 1, the existing darlington triode has only 3 pins, namely B (base), C (collector), E (emitter), and two NPN triodes Q1 and Q2; r1 and R2 are resistors with large resistance values. And Ib R1> Vbe (on), otherwise the driving current Ib can not turn on the Darlington transistor. Because the storage time delay of the triode is large, the turn-off delay of each triode of the existing Darlington triode driving circuit is t1 and t2 respectively. When the NPN triode Q1 is turned off, the base-collector charge can be discharged through the K1, and the NPN triode Q2 can only be discharged through the K1 after passing through the series resistor R1, so that the t2 is far greater than the t1, which causes the turn-off delay of the whole darlington triode to be very large and generates a very large switching loss. And the Darlington triode is added with two resistors R1, R2 has higher requirements on production process, layout design, current density and cost. Therefore, the existing Darlington transistor driving circuit has the following defects: the turn-off delay is large, the efficiency is low, and the triode circuit with the stage number more than or equal to 3 is difficult to drive. When the stage number of the triode becomes larger, the turn-off delay is further increased, so that the popularization and the application of the triode in high-power products are limited. Moreover, when the number of stages of the transistor becomes larger, the conventional driving circuit cannot accurately control multi-stage NPN turn-off, and may cause a safety hazard due to excessive switching loss of the NPN transistor, which cannot embody the advantages of the darlington transistor driving circuit in high-power application, so that the disadvantage of the darlington transistor driving circuit limits the application of the darlington transistor driving circuit in high-power switching power supplies (such as LED lighting application schemes/chargers/adapters).
In order to solve the above problems in the prior art, an embodiment of the invention provides a multi-stage NPN transistor driving circuit. In the multi-stage NPN transistor driving circuit, the base switch devices corresponding to the NPN transistors are controlled to be closed through the logic circuit, so that charges stored in the base-collector electrodes of the NPN transistors corresponding to the base switch devices in the closed state are quickly discharged through the base switch devices in the closed state, and the corresponding NPN transistors can be quickly turned off. The turn-off time delay of the multi-stage NPN transistor driving circuit is small, and the switching loss is small.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a driving circuit including a multi-stage NPN transistor according to an embodiment of the present invention. In one embodiment, a driving circuit including a multi-stage NPN transistor includes:
the emitter of the front NPN transistor in two adjacent NPN transistors is connected with the base of the rear NPN transistor, the collectors of all the NPN transistors are connected together and lead out a first leading-out pin, the emitter of the rearmost NPN transistor leads out a second leading-out pin, the base of each NPN transistor leads out a control leading-out pin, the control leading-out pin corresponding to each NPN transistor is connected with the base switch device corresponding to each NPN transistor, each base switch device is connected with the logic circuit, and each base switch device is processed in a manner of being connected with reference.
In this embodiment, the specific value of N may be set according to actual needs and existing processes, and the specific value of N is not limited herein. The emitter of the front NPN transistor in the two adjacent NPN transistors is connected to the base of the rear NPN transistor, that is, the emitter of the NPN transistor Q1 is connected to the base of the NPN transistor Q2, the emitter of the NPN transistor Q2 is connected to the base of the NPN transistor Q3, and so on. The collectors of all NPN transistors are connected together and lead out a first pin, C in fig. 2, and the emitter of the rearmost NPN transistor (i.e., QN in fig. 2) leads out a second pin, E in fig. 2. As shown in fig. 2, a control pin is led out from the base of each NPN transistor, and as shown in fig. 2, a control pin B1 is led out from the base of the NPN transistor Q1, a control pin E1 is led out from the base of the NPN transistor Q2, a control pin E2 is led out from the base of the NPN transistor QN, and the control pin corresponding to each NPN transistor is connected to the base switching device corresponding to each NPN transistor. As shown in fig. 2, the base switch device corresponding to the NPN transistor Q1 is K1, and the control pin B1 corresponding to the NPN transistor Q1 is connected to K1; a base switch device corresponding to the NPN transistor Q2 is K2, and a control leading pin E1 corresponding to the NPN transistor Q2 is connected with K2; and a base switch device corresponding to the NPN transistor QN is KN, and a control leading pin E (N-1) corresponding to the NPN transistor QN is connected with KN. And each base switching device is processed with reference to ground. And each base switch device is connected with the logic circuit, so that the base switch devices can be controlled to be turned off or turned on through the logic circuit, and when the base switch devices are controlled to be turned on through the logic circuit, charges stored in the base-collector of the corresponding NPN transistor are quickly discharged through the base switch devices in the closed state. The switching delay can be greatly reduced, and all base switch devices are closed simultaneously, so that the turn-off delay of the multi-stage NPN transistor is close to the turn-off delay of a single NPN transistor. And the multistage NPN transistors in the right-side dashed line frame in fig. 2 can be integrated onto one chip, so that high density, high integration, and high power are achieved to a great extent.
In this embodiment, the driving circuit including the multi-stage NPN transistor includes: the emitter of the front NPN transistor in two adjacent NPN transistors is connected with the base of the rear NPN transistor, the collectors of all the NPN transistors are connected together and lead out a first leading-out pin, the emitter of the rearmost NPN transistor leads out a second leading-out pin, the base of each NPN transistor leads out a control leading-out pin, the control leading-out pin corresponding to each NPN transistor is connected with the base switch device corresponding to each NPN transistor, each base switch device is connected with the logic circuit, and each base switch device is processed in a manner of being connected with reference. Through this embodiment, following beneficial effects can be realized:
1. more stages of NPN transistors can be driven;
2. the turn-off delay of the N (N is more than or equal to 2) grade NPN transistor is the same as or similar to that of a single NPN transistor;
3. high-density integration of N (N is more than or equal to 2) grade NPN transistors can be realized; a resistor device is not needed, so that the production difficulty of the process and the multi-stage NPN structure is reduced;
4. the driving circuit is simple, and can be driven by using a low-voltage process with low cost, so that the driving cost is reduced; the multi-stage NPN transistor circuit can be IP-based, and can be driven by only one driving circuit, so that the research and development period is greatly shortened;
5. the multi-stage NPN transistor is driven to be short in turn-off delay, switching loss is greatly reduced, efficiency is improved, safety performance of more stages of NPN transistors is improved, and the multi-stage NPN transistor has great positive significance in popularization and promotion of the multi-stage NPN transistors with high power, high density, high integration and low cost.
Further, in an embodiment, the logic circuit is configured to output a turn-off signal, and the turn-off signal is configured to turn off all of the base switching devices.
In this embodiment, the logic circuit has N +1 control signals, including on1, off1 to off. Wherein on1 is an off signal, when the logic circuit outputs on1, K1 to KN (N > ═ 2) are all turned off, the current source Ib is input to the base of the first NPN transistor (Q1), through the amplification effect of the triode, the collector current generated by the first NPN transistor (Q1) is input to the base of the 2 nd NPN transistor (Q2), and so on, and finally input to the base of the nth NPN transistor (QN), through the amplification of the NPN transistor (QN), the generated collector current is IcN, so that the same output current IcN is achieved, the more the number of stages (i.e. the number) of the NPN transistors, the smaller the required drive current Ib is, and the smaller the energy consumption is.
Further, in an embodiment, the logic circuit is further configured to output a close signal, where the close signal is used to close a base switching device corresponding to the close signal. When the base switch device is closed, the charge stored in the base-collector of the NPN transistor corresponding to the base switch device in the closed state is discharged through the base switch device in the closed state.
In this embodiment, when all the NPN transistors need to be turned off, the logic circuit outputs the closing signals off1 to offN, where the closing signals off1 to offN can use unified control signals according to actual conditions to control the closing of K1 to KN, and at this time, charges stored in the base-collector electrodes of the NPN transistors Q1 to QN are quickly discharged through the base switching devices K1 to KN corresponding to the NPN transistors Q1 to QN, so that the NPN transistors Q1 to QN can be quickly turned off.
In this embodiment, selective turn-off may also be performed, for example, if it is required to turn off the NPN transistors Q1, Q5, and Q7, the logic circuit outputs the turn-off signals off1, off5, and off7, so as to control the closing of the K1, K5, and K7, at which time the charges stored in the bases and collectors of the NPN transistors Q1, Q5, and Q7 are discharged rapidly through the base switching devices K1, K5, and K7 corresponding to the NPN transistors Q1, Q5, and Q7, so that the NPN transistors Q1, Q5, and Q7 can all be turned off rapidly. When a part of the NPN transistors need to be turned off, only a logic circuit needs to output a closing signal for closing the base switch devices corresponding to the to-be-turned-off NPN transistors, so that the base switch devices are controlled to be closed, and the to-be-turned-off NPN transistors can be turned off rapidly. In addition, in the embodiment, an ESD device of each pin of the driving circuit is hidden; in this embodiment, control of the emitter lead-out signal EN corresponding to QN is not limited, and EN may be connected to I/O or an internal sampling circuit.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or system. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or system that comprises the element.
The above-mentioned serial numbers of the embodiments of the present invention are merely for description and do not represent the merits of the embodiments.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (4)
1. A driving circuit comprising a plurality of stages of NPN transistors, comprising:
the emitter of the front NPN transistor in two adjacent NPN transistors is connected with the base of the rear NPN transistor, the collectors of all the NPN transistors are connected together and lead out a first leading-out pin, the emitter of the rearmost NPN transistor leads out a second leading-out pin, the base of each NPN transistor leads out a control leading-out pin, the control leading-out pin corresponding to each NPN transistor is connected with the base switch device corresponding to each NPN transistor, each base switch device is connected with the logic circuit, and each base switch device is processed in a manner of being connected with reference.
2. The driving circuit comprising a multi-stage NPN transistor according to claim 1, wherein the logic circuit is configured to output a turn-off signal, the turn-off signal being configured to turn off all of the base switching devices.
3. The driving circuit comprising a multi-stage NPN transistor according to claim 2, wherein the logic circuit is further configured to output a close signal, the close signal configured to close a base switching device corresponding to the close signal.
4. The driving circuit comprising a multi-stage NPN transistor according to claim 3, wherein when the base switching device is closed, the charge stored at the base-collector of the NPN transistor corresponding to the base switching device in the closed state is drained through the base switch in the closed state.
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| CN202010156842.1A CN113381590A (en) | 2020-03-09 | 2020-03-09 | Drive circuit containing multistage NPN transistor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010156842.1A CN113381590A (en) | 2020-03-09 | 2020-03-09 | Drive circuit containing multistage NPN transistor |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4769560A (en) * | 1986-03-17 | 1988-09-06 | Kabushiki Kaisha Toshiba | Semiconductor device having darlington-connected transistor circuit |
| US20110122659A1 (en) * | 2009-11-20 | 2011-05-26 | Bcd Semiconductor Manufacturing Limited | Power transistor driving circuits and methods for switching mode power supplies |
| CN104617751A (en) * | 2015-02-03 | 2015-05-13 | 辉芒微电子（深圳）有限公司 | Audion drive circuit and drive method |
| CN106787767A (en) * | 2017-02-17 | 2017-05-31 | 辉芒微电子（深圳）有限公司 | A kind of Switching Power Supply with multistage Darlington transistor |
| CN207706059U (en) * | 2017-11-02 | 2018-08-07 | 辉芒微电子（深圳）有限公司 | A kind of constant voltage constant current control circuit, chip and Switching Power Supply |
| CN207706058U (en) * | 2017-11-02 | 2018-08-07 | 辉芒微电子（深圳）有限公司 | A kind of constant-current control circuit, chip and Switching Power Supply |
-
2020
- 2020-03-09 CN CN202010156842.1A patent/CN113381590A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4769560A (en) * | 1986-03-17 | 1988-09-06 | Kabushiki Kaisha Toshiba | Semiconductor device having darlington-connected transistor circuit |
| US20110122659A1 (en) * | 2009-11-20 | 2011-05-26 | Bcd Semiconductor Manufacturing Limited | Power transistor driving circuits and methods for switching mode power supplies |
| CN104617751A (en) * | 2015-02-03 | 2015-05-13 | 辉芒微电子（深圳）有限公司 | Audion drive circuit and drive method |
| CN106787767A (en) * | 2017-02-17 | 2017-05-31 | 辉芒微电子（深圳）有限公司 | A kind of Switching Power Supply with multistage Darlington transistor |
| CN207706059U (en) * | 2017-11-02 | 2018-08-07 | 辉芒微电子（深圳）有限公司 | A kind of constant voltage constant current control circuit, chip and Switching Power Supply |
| CN207706058U (en) * | 2017-11-02 | 2018-08-07 | 辉芒微电子（深圳）有限公司 | A kind of constant-current control circuit, chip and Switching Power Supply |
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Application publication date: 20210910 |