CN113380666B - Device for multilayer composite film passivation structure of table-board high-power semiconductor device - Google Patents
Device for multilayer composite film passivation structure of table-board high-power semiconductor device Download PDFInfo
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- CN113380666B CN113380666B CN202110467024.8A CN202110467024A CN113380666B CN 113380666 B CN113380666 B CN 113380666B CN 202110467024 A CN202110467024 A CN 202110467024A CN 113380666 B CN113380666 B CN 113380666B
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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Abstract
The invention discloses a device for a multilayer composite film passivation structure of a table-board high-power semiconductor device, which comprises a base, a rotary cavity, a coating device and a semiconductor device.
Description
Technical Field
The invention relates to the field of high-power semiconductor devices, in particular to a device for a multilayer composite film passivation structure of a table-board high-power semiconductor device.
Background
Along with the rapid development of current science and technology, the application of chip is wider and wider, and various electronic equipment also put forward higher and higher requirement to the quality of chip and chip packaging structure, in order to prevent that the chip surface from staining the upper corrosion medium, all need cover the protection dielectric film on semiconductor device surface in order to form the passivation layer and protect usually, carry out stable coating through adjusting element to glass glue, semiconductor device is when carrying out passivation treatment, needs the place of improvement:
when a semiconductor device is passivated, an alpha-polycrystalline silicon layer, a semi-insulating polycrystalline silicon film, a low-temperature thermal oxidation layer, a high-temperature Si3N4 film, a glass passivation layer and a low-temperature thermal oxidation layer need to be coated on the surface of the semiconductor device, in the process of coating glass, glass glue is generally coated on the surface of a wafer by adopting a blade coating method, and workers control the force of scrapers to be inconsistent, so that the thickness of the glass glue on the surface of the wafer is different, the subsequent wafer processing is seriously influenced, and the wafer characteristics are easily damaged.
Disclosure of Invention
Aiming at the defects in the prior art, the invention is realized by the following technical scheme: the utility model provides a device that is used for mesa high-power semiconductor device multilayer complex film passivation structure, its structure includes base, rotatory chamber, coating device, semiconductor device, install rotatory chamber on the base, be equipped with the semiconductor device that meets with it on the rotatory chamber, the semiconductor device top is equipped with the coating device, the coating device is inserted perpendicularly and is inlayed in base one side, the coating device passes through the base and links to each other with rotatory chamber.
The rotating cavity comprises a protection cavity, a sucker, a rotating rod and a clamping seat, the clamping seat is arranged in the middle of the protection cavity and movably clamped with the rotating rod, the sucker is arranged at the top of the rotating rod and fixedly connected with the rotating rod, the protection cavity is connected with a coating device through a base, and the sucker is connected with a semiconductor device.
As a further optimization of the invention, the coating device comprises a coating component, a slide rail, a clamping rod, a buckle, a sleeve joint part and a sliding adjusting rod, wherein the coating component is connected with the slide rail in a sliding manner, the slide rail is fixedly connected to the clamping rod, the end, facing the slide rail, of the clamping rod is provided with the buckle buckled with the clamping rod, the clamping rod is embedded and embedded with the sleeve joint part, the sleeve joint part is sleeved with the sliding adjusting rod, the coating component is arranged on the semiconductor device, and the sliding adjusting rod is connected with the protection cavity through a base.
The coating assembly comprises an input port, a sliding block, a separating piece, a receiving groove and a material guiding piece, wherein the input port is arranged on one side of the receiving groove, the input port is communicated with the receiving groove, the sliding block connected with the receiving groove is arranged at one end of the receiving groove, the other end of the receiving groove is connected with the separating piece, the separating piece is communicated with the material guiding piece, the sliding block is connected with a sliding rail in a sliding mode, and the material guiding piece is arranged on a semiconductor device.
The separator comprises a grid guide plate and a frame body, the grid guide plate is matched with the frame body, the frame body is connected with the receiving groove, and the grid guide plate is communicated with the material guide piece.
As a further optimization of the invention, the material guiding member comprises an overflow port, a protrusion, a material receiving cavity and an oblique flow plate, wherein the overflow port is arranged at the bottom of the material receiving cavity, oblique flow plates are arranged on two sides of the material receiving cavity, one end of each oblique flow plate, which is far away from the material receiving cavity, is provided with the protrusion attached to the oblique flow plate, the material receiving cavity is communicated with the grid guide plate, and the overflow port is arranged on the semiconductor device.
As a further optimization of the invention, the sleeving piece comprises a clamping plate, a contact head, a moving block, a superposition sleeve and an elastic piece, wherein the clamping plate is tightly attached to one side of the moving block, the superposition sleeve is arranged at one end of the clamping plate, which is far away from the moving block, the superposition sleeve is connected with the elastic piece, the elastic piece is connected with the contact head, the moving block is embedded with the clamping rod, and the moving block is sleeved with the sliding adjusting rod.
As a further optimization of the invention, the sliding adjusting rod comprises a connecting rod, a sliding sheet, a baffle, an auxiliary adjusting piece and a concave interface, the connecting rod is fixedly connected with the baffle, the auxiliary adjusting piece attached to the connecting rod is arranged on each of two sides of the connecting rod, the concave interface is arranged on the auxiliary adjusting piece, the auxiliary adjusting piece is attached to the sliding sheet, the connecting rod is connected with the protection cavity through a base, and the auxiliary adjusting piece is in contact with the contact head.
As a further optimization of the invention, the oblique flow plate is in a triangular structure and is matched with the side wall of the material receiving cavity.
As the further optimization of the invention content, eight female interfaces are arranged, and eight female interfaces are symmetrically arranged on the two auxiliary adjusting parts.
Advantageous effects
The invention relates to a device for a multilayer composite film passivation structure of a table-board high-power semiconductor device, which has the following beneficial effects:
1. according to the invention, through the combined arrangement of the coating component, the slide rail, the clamping rod, the buckle, the sleeve piece and the sliding adjusting rod, the coating component is arranged on the clamping rod through the slide rail, the position of the coating component is limited through the buckle, the coating component can be positioned at the use position, and the sleeve piece drives the clamping rod to adjust the sliding adjusting rod up and down, so that the tail end of the coating component can be directly contacted with the surface of a semiconductor device for coating, the coating thickness of glass cement can be consistent, and the use effect of the semiconductor device can be ensured.
2. According to the invention, through the combined arrangement of the input port, the sliding block, the separating part, the receiving groove and the material guide part, the input port is opened, the glass cement is poured into the receiving groove, and after the glass cement is introduced into the receiving groove, the glass cement can fall down on the separating part due to inertia, and the glass cement is divided and separated through the separating part, so that a large amount of glass cement in the receiving groove is prevented from directly falling on the material guide part.
3. According to the invention, through the combined arrangement of the overflow port, the bulge, the material receiving cavity and the oblique flow plate, the glass cement is guided to the material receiving cavity, the glass cement can be contacted with the bulge and the oblique flow plate, the bulge and the oblique flow plate adopt the non-sticking effect of the bionic lotus flower to obliquely guide the glass cement to the overflow port, and the glass cement is guided out through the overflow port, so that the glass cement can be effectively coated on a semiconductor device.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
FIG. 1 is a schematic structural diagram of an apparatus for passivation of a multi-layer composite film of a mesa high-power semiconductor device according to the present invention;
fig. 2 is a schematic view of the internal structure of the rotating chamber of the present invention.
FIG. 3 is a schematic sectional view of the coating apparatus of the present invention.
Fig. 4 is a schematic side view of the material guiding member of the present invention.
Fig. 5 is a schematic cross-sectional view of the socket of the present invention.
Fig. 6 is a schematic cross-sectional view of the slide lever according to the present invention.
In the figure: the coating device comprises a base 1, a rotating cavity 2, a coating device 3, a semiconductor device 4, a protective cavity 21, a suction cup 22, a rotating rod 23, a clamping seat 24, a coating component 31, a sliding rail 32, a clamping rod 33, a clamping buckle 34, a sleeve-connection piece 35, a sliding adjusting rod 36, an input port 311, a sliding block 312, a separating piece 313, a receiving groove 314, a material guiding piece 315, a grid guide plate S1, a frame body S2, an overflow port T1, a protrusion T2, a material receiving cavity T3, an oblique flow plate T4, a clamping plate 351, contact heads 352, a moving block 353, a overlapping sleeve 354, an elastic piece 355, a connecting rod 361, a sliding piece 362, a baffle 363, an auxiliary adjusting piece 364 and a concave interface 365.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further described with the specific embodiments.
Example one
Referring to fig. 1, the present invention provides a technical solution: the utility model provides a device that is used for mesa high-power semiconductor device multilayer complex film passivation structure, its structure includes base 1, rotatory chamber 2, coating device 3, semiconductor device 4, install rotatory chamber 2 on the base 1, be equipped with the semiconductor device 4 that meets with it on the rotatory chamber 2, 4 tops of semiconductor device are equipped with coating device 3, coating device 3 inserts perpendicularly in base 1 one side, coating device 3 passes through base 1 and links to each other with rotatory chamber 2.
Referring to fig. 2, the rotating cavity 2 includes a protection cavity 21, a suction cup 22, a rotating rod 23, and a clamping seat 24, the clamping seat 24 is disposed in the middle of the protection cavity 21, the clamping seat 24 is movably clamped with the rotating rod 23, the suction cup 22 is disposed on the top of the rotating rod 23 and fixedly connected with the rotating rod 23, the protection cavity 21 is connected with the coating device 3 through the base 1, and the suction cup 22 is connected with the semiconductor device 4.
The suction cup 22 is used for matching with the rotating rod 23, the middle position of the bottom of the semiconductor device 4 is directly contacted with the suction cup 22, the semiconductor device 4 can press the suction cup 22 downwards, so that the gas between the semiconductor device and the suction cup can be discharged outwards to form a vacuum state, and the suction cup 22 can stably adsorb the semiconductor device 4 on the rotating rod 23.
Referring to fig. 3, the coating apparatus 3 includes a coating assembly 31, a slide rail 32, a clamping rod 33, a buckle 34, a sleeve-connection member 35, and a sliding adjustment rod 36, the coating assembly 31 is slidably connected to the slide rail 32, the slide rail 32 is fixedly connected to the clamping rod 33, the end of the clamping rod 33 facing the slide rail 32 is provided with the buckle 34 fastened to the clamping rod 33, the clamping rod 33 is embedded and embedded in the sleeve-connection member 35, the sleeve-connection member 35 is sleeved with the sliding adjustment rod 36, the coating assembly 31 is disposed on the semiconductor device 4, and the sliding adjustment rod 36 is connected to the protection cavity 21 through the base 1.
The buckle 34 is used for being matched with the slide rail 32, the coating component 31 is connected to the clamping rod 33 in a sliding and buckling mode through the slide rail 32, and then the buckle 34 and the coating component 31 are buckled and positioned, so that the coating component 31 is effectively positioned at a use position, and the coating component 31 is prevented from being displaced in the use process.
Referring to fig. 3, the coating assembly 31 includes an input port 311, a slider 312, a partition 313, a receiving slot 314, and a material guiding member 315, the input port 311 is disposed at one side of the receiving slot 314 and is communicated with the receiving slot 314, the slider 312 connected to the receiving slot 314 is disposed at one end of the receiving slot 314, the partition 313 is connected to the partition 313, the partition 313 is communicated with the material guiding member 315, the slider 312 is slidably connected to the slide rail 32, and the material guiding member 315 is disposed on the semiconductor device 4.
Referring to fig. 3, the partition 313 includes a grid guide S1 and a frame S2, the grid guide S1 is engaged with the frame S2, the frame S2 is connected to the receiving groove 314, and the grid guide S1 is connected to the material guiding member 315.
The grid guide plate S1 is used to match with the receiving groove 314, and after the glass cement is guided into the receiving groove 314, the glass cement will flow down onto the grid guide plate S1 due to inertia, and a plurality of grids are arranged on the grid guide plate S1, so that the glass cement in the receiving groove 314 can be effectively separated and guided out.
Referring to fig. 4, the material guiding member 315 includes an overflow port T1, a protrusion T2, a material receiving cavity T3, and an oblique flow plate T4, the overflow port T1 is disposed at the bottom of the material receiving cavity T3, oblique flow plates T4 are disposed on both sides of the material receiving cavity T3, a protrusion T2 attached to one end of the oblique flow plate T4 far from the material receiving cavity T3 is disposed on one end of the oblique flow plate T4, the material receiving cavity T3 is communicated with the grid guide plate S1, and the overflow port T1 is disposed on the semiconductor device 4.
Referring to fig. 4, the inclined flow plate T4 is a triangular structure, and the inclined flow plate T4 is matched with the side wall of the material receiving cavity T3.
The inclined flow plate T4 is used for matching with the material receiving cavity T3, the inclined flow plate T4 and the bulge T2 are mutually matched to adopt the non-stick effect of the bionic lotus, so that glass cement is not easy to adhere to the inclined flow plate T4, and the glass cement is effectively and completely led out from the overflow port T1.
Example two
Referring to fig. 1, the present invention provides a technical solution: the utility model provides a device that is used for mesa high-power semiconductor device multilayer complex film passivation structure, its structure includes base 1, rotatory chamber 2, coating device 3, semiconductor device 4, install rotatory chamber 2 on the base 1, be equipped with the semiconductor device 4 that meets with it on the rotatory chamber 2, 4 tops of semiconductor device are equipped with coating device 3, coating device 3 inserts perpendicularly in base 1 one side, coating device 3 passes through base 1 and links to each other with rotatory chamber 2.
Referring to fig. 2, the rotating cavity 2 includes a protection cavity 21, a suction cup 22, a rotating rod 23, and a clamping seat 24, the clamping seat 24 is disposed at the middle position of the protection cavity 21, the clamping seat 24 is movably clamped with the rotating rod 23, the suction cup 22 is disposed at the top of the rotating rod 23 and fixedly connected with the rotating rod 23, the protection cavity 21 is connected with the coating device 3 through the base 1, and the suction cup 22 is connected with the semiconductor device 4.
The suction cup 22 is used for matching with the rotating rod 23, the middle position of the bottom of the semiconductor device 4 is directly contacted with the suction cup 22, the semiconductor device 4 can press the suction cup 22 downwards, so that the gas between the semiconductor device and the suction cup can be discharged outwards to form a vacuum state, and the suction cup 22 can stably adsorb the semiconductor device 4 on the rotating rod 23.
Referring to fig. 3, the coating apparatus 3 includes a coating assembly 31, a slide rail 32, a clamping rod 33, a buckle 34, a sleeve member 35, and a sliding adjusting rod 36, the coating assembly 31 is slidably connected to the slide rail 32, the slide rail 32 is fixedly connected to the clamping rod 33, the end of the clamping rod 33 facing the slide rail 32 is provided with the buckle 34 fastened thereto, the clamping rod 33 is embedded with the sleeve member 35, the sleeve member 35 is sleeved with the sliding adjusting rod 36, the coating assembly 31 is disposed on the semiconductor device 4, and the sliding adjusting rod 36 is connected to the protection cavity 21 through the base 1.
The buckle 34 is used for being matched with the slide rail 32, the coating component 31 is connected to the clamping rod 33 in a sliding and buckling mode through the slide rail 32, and then the buckle 34 and the coating component 31 are buckled and positioned, so that the coating component 31 is effectively positioned at a use position, and the coating component 31 is prevented from being displaced in the use process.
Referring to fig. 5, the sleeve member 35 includes a clamping plate 351, a contact head 352, a moving block 353, a superposed sleeve 354 and an elastic member 355, the clamping plate 351 is tightly attached to one side of the moving block 353, the superposed sleeve 354 is disposed at one end of the clamping plate 351 away from the moving block 353, the superposed sleeve 354 is connected to the elastic member 355, the elastic member 355 is connected to the contact head 352, the moving block 353 is embedded and embedded to the clamping rod 33, and the moving block 353 is sleeved and combined to the sliding adjusting rod 36.
The above-mentioned card board 351 is used for matching with the contact head 352, the contact head 352 will retract inwards when contacting with the sliding adjusting rod 36, the pressure is sent to the overlapping sleeve 354 and the elastic member 355, the overlapping sleeve 354 and the elastic member 355 will retract inwards when being pressed, the inside of the card board 351 is in a solid state, and the card board is not easy to retract inwards when being pressed by the overlapping sleeve 354 and the elastic member 355, so as to effectively and stably support the contact head 352.
Referring to fig. 6, the sliding lever 36 includes a connecting rod 361, a sliding piece 362, a baffle 363, an auxiliary adjuster 364, and a concave interface 365, the connecting rod 361 is fixedly connected to the baffle 363, the auxiliary adjuster 364 attached to the connecting rod 361 is disposed on both sides of the connecting rod 361, the concave interface 365 is disposed on the auxiliary adjuster 364, the auxiliary adjuster 364 is attached to the sliding piece 362, the connecting rod 361 is connected to the protection cavity 21 through the base 1, and the auxiliary adjuster 364 is in contact with the contact head 352.
Referring to fig. 6, eight female connectors 365 are provided, and eight female connectors 365 are symmetrically provided on two auxiliary adjusting parts 364.
The sliding sheet 362 is used for being matched with the concave interface 365, the moving block 353 slides on the auxiliary adjusting piece 364 to adjust the position, after the moving block 353 moves downwards to the concave interface 365, the contact head 352 in the moving block 353 can be fastened with the concave interface 365, the position of the moving block 353 is effectively positioned, and when the sliding sheet 362 needs to move downwards again, the sliding sheet 362 is made of a soft rubber material, the surface of the sliding sheet is smooth, and the contact head 352 can be assisted to slide out of the concave interface 365 and move downwards again.
The working principle of the above technical solution is explained as follows:
when the invention is used, the table top of the semiconductor device 4 is required to be sequentially deposited with an alpha-polysilicon layer, a semi-insulating polysilicon film, a low-temperature thermal oxidation layer, a high-temperature Si3N4 film, a glass passivation layer and a low-temperature thermal oxidation layer from inside to outside, when the glass passivation layer is coated, the semiconductor device 4 is placed on the sucker 22, the middle position of the semiconductor device 4 is directly contacted with the sucker 22, a worker presses the semiconductor device 4 downwards, so that gas between the semiconductor device 4 and the sucker 22 is discharged outwards after being pressed to form a vacuum state, the sucker 22 can stably adsorb the semiconductor device 4 on the rotating rod 23, the receiving groove 314 is driven by the sliding block 312 to slide on the sliding rail 32, after the receiving groove 314 slides to a certain position, the side wall of the receiving groove is buckled with the buckle 34, and the buckle 34 can effectively fix and buckle the receiving groove 314 on the position after sliding, the swinging displacement phenomenon of the receiving groove 314 in the using process is prevented, the input port 311 is opened, a worker pours the glass cement into the receiving groove 314 through the input port 311, the glass cement conveyed into the receiving groove 314 flows downwards to the grid guide plate S1 due to inertia, a plurality of grids with the same size are arranged on the grid guide plate S1, the glass cement flowing downwards can be effectively dispersed and separated, a large amount of glass cement is prevented from directly flowing to the material receiving cavity T3 from the receiving groove 314, the glass cement is separated and dispersed and guided to the material receiving cavity T3 through the grid guide plate S1, the glass cement flows to the material receiving cavity T3 and is contacted with the bulge T2 and the oblique flow plate T4, the bulge T2 and the oblique flow plate T4 are matched with each other, the glass cement is guided downwards by the non-acting auxiliary material receiving cavity T3 of bionic lotus leaves, the material receiving cavity T3 is in an isosceles inverted triangle structure, the glass cement flows downwards to the overflow port T1 in a centralized mode, lead out glass glue through overflow port T1, staff control rotary rod 23 drives semiconductor device 4 through rotary rod 23 and carries out the rotation of uniform velocity, make the glass that overflow port T1 derived glue the coating of the temperature that can be even on semiconductor device 4, guarantee that the coating is glued at the glass on semiconductor device 4 surface and thickness is unanimous, make effectively form the glass passivation layer on semiconductor device 4, effectively improve semiconductor device 4's result of use.
When coating a semiconductor device 4, the moving block 353 drives the clamping rod 33 to move downwards on the connecting rod 361 to adjust the position of the coating component 31, the contact head 352 is directly contacted with the auxiliary adjusting piece 364 in the downward moving process of the moving block 353, the surface of the auxiliary adjusting piece 364 is smooth, so that the contact head 352 can effectively match with the moving block 353 to slide on the auxiliary adjusting piece 364, after the moving block 353 slides downwards to a certain position, the contact head 352 directly faces the concave interface 365, the overlapping sleeve 354 at the rear end of the contact head 352 and the elastic piece 355 can generate a springback effect under the condition of no pressure, the contact head 352 is forwards popped out and buckled on the concave interface 365 under the springback effect of the elastic piece 355 to effectively fixedly buckle the moving block 353 on an adjusting position, if the moving block 353 needs to be moved downwards again to be adjusted, a worker presses the moving block 353 downwards, and the moving block 353 is subjected to a downward pushing force, the contact head 352 can slide out from the side edge of the concave interface 365, two ends of the concave interface 365 are arc-shaped, the contact head 352 can be effectively assisted to move outwards, after moving outwards and separating from the concave interface 365, the contact head 352 can be directly contacted with the sliding sheet 362 and pressed, after being pressed, the contact head 352 can guide the pressure to the overlapping sleeve 354 and the elastic piece 355, the surface of the sliding sheet 362 is smooth, excessive resistance cannot be generated in the contact process with the contact head 352, the contact head 352 is effectively guided downwards to the concave interface 365 below the assistant adjusting piece 364, the clamping rod 33 is driven by the moving block 353 to move downwards, after the coating assembly 31 is contacted with the semiconductor device 4, the contact head 352 and the concave interface 365 are stably buckled together, the moving block 353 is positioned at a corresponding position, the coating assembly 31 can be stably contacted with the semiconductor device 4 to coat glass cement, and the force of the coating assembly 31 contacting the semiconductor device 4 is uniform, the glass cement can be uniformly coated on the surface of the semiconductor device 4, so that the semiconductor device 4 can be effectively processed subsequently, and the working stability and reliability of the semiconductor device 4 are improved.
In summary, the base, the rotary cavity, the coating device and the semiconductor device are combined to form a novel multilayer composite film passivation structure of the mesa high-power semiconductor device, when the semiconductor device is passivated, the semiconductor device is stably fixed on the rotary rod through the sucker, the clamping rod is driven by the sleeving piece to vertically adjust the position on the sliding adjusting rod, the coating assembly can be directly contacted with the semiconductor device, the position of the coating assembly is positioned and limited through the buckle, the coating assembly is prevented from displacing in work, glass cement is infused into the coating assembly through the input port, the glass cement is evenly and stably coated on the surface of the semiconductor device through the coating assembly, the follow-up effective processing of the semiconductor device is guaranteed, and the use characteristics and the use quality of the semiconductor device are improved.
While there have been shown and described what are at present considered the fundamental principles and essential features of the invention and its advantages, it will be apparent to those skilled in the art that the invention is not limited to the details of the foregoing exemplary embodiments, but is capable of other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (1)
1. The utility model provides a device that is used for mesa high power semiconductor device multilayer complex film passivation structure, its structure includes base (1), rotatory chamber (2), coating device (3), semiconductor device (4), its characterized in that:
the semiconductor device coating device is characterized in that a rotary cavity (2) is mounted on the base (1), the rotary cavity (2) is connected with a semiconductor device (4), a coating device (3) is arranged on the semiconductor device (4), and the coating device (3) is inserted and embedded on the base (1);
the rotating cavity (2) comprises a protection cavity (21), a sucking disc (22), a rotating rod (23) and a clamping seat (24), the clamping seat (24) is arranged on the protection cavity (21), the clamping seat (24) is movably clamped with the rotating rod (23), the rotating rod (23) is fixedly connected with the sucking disc (22), the protection cavity (21) is connected with the coating device (3) through the base (1), and the sucking disc (22) is connected with the semiconductor device (4);
the coating device (3) comprises a coating component (31), a sliding rail (32), a clamping rod (33), a buckle (34), a sleeving part (35) and a sliding adjusting rod (36), the coating component (31) is connected with the sliding rail (32) in a sliding mode, the sliding rail (32) is connected onto the clamping rod (33), the clamping rod (33) is buckled with the buckle (34), the clamping rod (33) is embedded and embedded with the sleeving part (35), the sleeving part (35) is sleeved with the sliding adjusting rod (36), the coating component (31) is arranged on a semiconductor device (4), and the sliding adjusting rod (36) is connected with the protective cavity (21) through the base (1);
the coating assembly (31) comprises an input port (311), a sliding block (312), a separating piece (313), a receiving groove (314) and a material guiding piece (315), wherein the input port (311) is communicated with the receiving groove (314), the receiving groove (314) is connected with the sliding block (312) and the separating piece (313), the separating piece (313) is communicated with the material guiding piece (315), the sliding block (312) is connected with a sliding rail (32) in a sliding mode, and the material guiding piece (315) is arranged on the semiconductor device (4);
the separator (313) comprises a grid guide plate (S1) and a frame body (S2), the grid guide plate (S1) is matched with the frame body (S2), the frame body (S2) is connected with the receiving groove (314), and the grid guide plate (S1) is communicated with the material guide part (315);
the material guiding part (315) comprises an overflow port (T1), a protrusion (T2), a material receiving cavity (T3) and an oblique flow plate (T4), wherein the overflow port (T1) is arranged on the material receiving cavity (T3), the oblique flow plates (T4) are arranged on two sides of the material receiving cavity (T3), the oblique flow plates (T4) are attached to the protrusion (T2), the material receiving cavity (T3) is communicated with the grid guide plate (S1), and the overflow port (T1) is arranged on the semiconductor device (4);
the sleeving part (35) comprises a clamping plate (351), a contact head (352), a moving block (353), an overlapping sleeve (354) and an elastic part (355), the clamping plate (351) is tightly attached to the moving block (353), the overlapping sleeve (354) is arranged on the clamping plate (351), the elastic part (355) is connected with the overlapping sleeve (354) and the contact head (352), the moving block (353) is embedded and embedded with the clamping rod (33), and the moving block (353) is sleeved and embedded with the sliding adjusting rod (36);
the sliding adjusting rod (36) comprises a connecting rod (361), a sliding piece (362), a baffle (363), an auxiliary adjusting piece (364) and a concave interface (365), the connecting rod (361) is fixedly connected with the baffle (363), the auxiliary adjusting piece (364) is arranged on each of two sides of the connecting rod (361), the concave interface (365) is arranged on the auxiliary adjusting piece (364), the auxiliary adjusting piece (364) is attached to the sliding piece (362), the connecting rod (361) is connected with the protection cavity (21) through the base (1), and the auxiliary adjusting piece (364) is in contact with the contact head (352);
the inclined flow plate (T4) is of a triangular structure, and the inclined flow plate (T4) is matched with the side wall of the material receiving cavity (T3);
the number of the concave interfaces (365) is eight, and the eight concave interfaces (365) are symmetrically arranged on the two auxiliary adjusting pieces (364).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110467024.8A CN113380666B (en) | 2021-04-28 | 2021-04-28 | Device for multilayer composite film passivation structure of table-board high-power semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110467024.8A CN113380666B (en) | 2021-04-28 | 2021-04-28 | Device for multilayer composite film passivation structure of table-board high-power semiconductor device |
Publications (2)
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| CN101374606A (en) * | 2006-02-02 | 2009-02-25 | 武藏工业株式会社 | Pallet for fixing work and liquid applying apparatus provided with same |
| CN105772323A (en) * | 2014-12-18 | 2016-07-20 | 沈阳芯源微电子设备有限公司 | Semiconductor made thick photoresist film coating device and application method thereof |
| CN209597560U (en) * | 2019-01-21 | 2019-11-08 | 湖北华扬玻璃有限公司 | Sandwich glass glue-spreading device |
| CN209912853U (en) * | 2019-05-20 | 2020-01-07 | 成都锐欧光学电子有限公司 | Multi-position extended semiconductor device dispenser |
| CN212380394U (en) * | 2020-06-23 | 2021-01-19 | 芯米(厦门)半导体设备有限公司 | Wafer spin coating waste liquid collection device |
| CN212732779U (en) * | 2020-05-15 | 2021-03-19 | 泰州市季氟隆塑胶制品有限公司 | Automatic coating device for surface of plastic product |
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|---|---|---|---|---|
| CN101374606A (en) * | 2006-02-02 | 2009-02-25 | 武藏工业株式会社 | Pallet for fixing work and liquid applying apparatus provided with same |
| CN105772323A (en) * | 2014-12-18 | 2016-07-20 | 沈阳芯源微电子设备有限公司 | Semiconductor made thick photoresist film coating device and application method thereof |
| CN209597560U (en) * | 2019-01-21 | 2019-11-08 | 湖北华扬玻璃有限公司 | Sandwich glass glue-spreading device |
| CN209912853U (en) * | 2019-05-20 | 2020-01-07 | 成都锐欧光学电子有限公司 | Multi-position extended semiconductor device dispenser |
| CN212732779U (en) * | 2020-05-15 | 2021-03-19 | 泰州市季氟隆塑胶制品有限公司 | Automatic coating device for surface of plastic product |
| CN212380394U (en) * | 2020-06-23 | 2021-01-19 | 芯米(厦门)半导体设备有限公司 | Wafer spin coating waste liquid collection device |
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