CN113380636A - Welding method and chip packaging method - Google Patents
Welding method and chip packaging method Download PDFInfo
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- CN113380636A CN113380636A CN202110475537.3A CN202110475537A CN113380636A CN 113380636 A CN113380636 A CN 113380636A CN 202110475537 A CN202110475537 A CN 202110475537A CN 113380636 A CN113380636 A CN 113380636A
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- 238000003466 welding Methods 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 14
- 230000017525 heat dissipation Effects 0.000 claims abstract description 83
- 229910052751 metal Inorganic materials 0.000 claims abstract description 57
- 239000002184 metal Substances 0.000 claims abstract description 57
- 238000005476 soldering Methods 0.000 claims abstract description 43
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 12
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 46
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 14
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 12
- 235000019253 formic acid Nutrition 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000011347 resin Substances 0.000 abstract description 21
- 229920005989 resin Polymers 0.000 abstract description 21
- 238000010438 heat treatment Methods 0.000 abstract description 11
- 239000000843 powder Substances 0.000 abstract description 11
- 238000006722 reduction reaction Methods 0.000 abstract description 5
- 230000001590 oxidative effect Effects 0.000 abstract description 3
- 230000004907 flux Effects 0.000 description 12
- 230000000694 effects Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 230000002829 reductive effect Effects 0.000 description 7
- 229910052718 tin Inorganic materials 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3494—Heating methods for reflowing of solder
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The application discloses a welding method and a chip packaging method, which are suitable for semiconductor packaging and comprise the following steps: oxidizing the parts to be welded and the welding parts to form metal oxide layers on the surfaces of the parts to be welded and the welding parts; and in the atmosphere containing reducing gas, welding the parts to be welded and the welding parts by reflow soldering so that the parts to be welded and the welding parts are tightly combined. According to the welding method, the reducing gas is used, so that the reduction reaction is generated on the surface of the part to be welded and the surface of the welding part in the heating process, the reliable welding of the metal heat dissipation layer is ensured, and the problem of low yield of chips caused by the conventional use of resin scaling powder is effectively avoided.
Description
Technical Field
The invention relates to the technical field of semiconductor testing, in particular to a welding method and a chip packaging method.
Background
With the continuous development and progress of the integrated circuit industry, the monolithic integration degree of the chip is higher and higher, the power consumption is higher and higher, and the requirement on the packaging technology is higher and higher. In order to improve heat dissipation performance in the current chip packaging process, metal layers are generally arranged on a chip and a heat dissipation cover, so that on one hand, heat dissipation is facilitated, and on the other hand, connection between the heat dissipation cover and the chip is facilitated.
At present, metal sheets such as indium sheets, tin-silver sheets or other metal sheets are generally used, in order to ensure the connection of a metal layer with a chip and a heat dissipation cover, resin soldering flux is needed to remove oxides on the surface of the metal sheets to complete welding, however, the metal sheets used at present are very easy to oxidize, the melting point of oxide films on the surfaces of the metal sheets is very high, the soldering flux is needed to remove the oxide films to achieve the welding effect, the residual soldering flux cannot be removed by cleaning, the residual soldering flux can be left between the heat dissipation cover and the chip, product failure can be caused in the use process of subsequent products, and metal splashing can be caused by volatilization of the resin soldering flux in the heating process, so that surrounding capacitors and chip short circuits are caused, and further the reliability of the products is influenced; in addition, the gas volatilized from the resin soldering flux in the heating process can form a cavity in the metal layer, which affects the heat dissipation effect of the product.
Disclosure of Invention
In view of the above-mentioned drawbacks and deficiencies of the prior art, it is desirable to provide a soldering method and a chip packaging method, which do not require the use of resin flux, and which ensure reliable soldering of the metal heat dissipation layer and prevent the resin flux from affecting the reliability of the product.
In a first aspect, the present invention provides a soldering method suitable for a semiconductor package, including:
oxidizing the parts to be welded and the welding parts to form metal oxide layers on the surfaces of the parts to be welded and the welding parts;
and in the atmosphere containing reducing gas, welding the parts to be welded and the welding parts by reflow soldering so that the parts to be welded and the welding parts are tightly combined.
As an alternative, the parts to be welded and the welding site are subjected to an oxidation treatment comprising:
the parts to be welded and the welded part were left in an air atmosphere for 4 to 8 hours.
Alternatively, the soldering of the parts to be soldered and the soldering portion by reflow soldering in an atmosphere containing a reducing gas includes:
after the temperature is kept at 140-155 ℃ for a period of time, the temperature is raised to 230-250 ℃ for welding.
As an optional scheme, the welding is carried out for 5min to 10min at the temperature of 230 ℃ to 250 ℃.
Optionally, the atmosphere containing the reducing gas is one or a mixture of several of formic acid gas, acetic acid gas and hydrogen gas.
Alternatively, the formic acid gas is a formic acid gas catalyzed by Pt.
Alternatively, the flow rate of the reducing-containing gas is 35 to 50 sccm.
In a second aspect, the present invention provides a chip packaging method, including:
the upper surface of the substrate is divided into a first area and a second area surrounding the first area, a chip is arranged in the first area, and a tin ball layer is arranged on the lower surface of the substrate;
arranging a metal heat dissipation layer on the surface of the chip;
arranging a heat dissipation cover above the substrate, wherein the heat dissipation cover is in contact with a metal heat dissipation layer, the heat dissipation cover is a part to be welded, and the metal heat dissipation layer is a welding part;
and welding the heat dissipation cover and the metal heat dissipation layer by the welding method of the first aspect so as to enable the heat dissipation cover to be tightly attached to the substrate and the metal heat dissipation layer.
Optionally, before welding the heat dissipation cover and the metal heat dissipation layer, the method further includes:
and the lower surface of the substrate is provided with a tin ball layer, and the tin ball layer is welded on the PCB.
As an optional scheme, a metal layer is plated in a contact area of the heat dissipation cover and the metal heat dissipation layer, and at least two through holes are formed in the side wall of the heat dissipation cover.
The invention has the following beneficial effects:
according to the welding method, the reductive gas is used, so that the reductive reaction is generated on the surface of the part to be welded and the surface of the welding part in the heating process, the welding is completed, the close fit between the heat dissipation cover and the metal heat dissipation layer is effectively realized, the rate of finished products is improved, and the problem that the rate of finished products of chips is influenced by the existing resin scaling powder is effectively avoided; the method of the invention reduces the process of spraying resin, simplifies the process and improves the processing efficiency.
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading of the following detailed description of non-limiting embodiments thereof, made with reference to the accompanying drawings in which:
FIG. 1 is a schematic flow diagram of a welding method according to one embodiment of the present invention;
FIG. 2 is a flow chart illustrating a chip packaging method according to an embodiment of the invention;
FIG. 3 is a schematic structural diagram of a chip package according to an embodiment of the invention;
FIG. 4 is a top view of a heat sink cover in an embodiment of the present invention;
FIG. 5 is a top view of a heat sink cover in another embodiment of the present invention;
in the figure:
1. the chip comprises a substrate, 2 parts of a chip, 3 parts of a tin ball layer, 4 parts of a metal heat dissipation layer, 5 parts of a heat dissipation cover, 51 parts of a side wall, 52 parts of a metal layer and 53 parts of a through hole.
Detailed Description
The present application will be described in further detail with reference to the following drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the relevant invention and not restrictive of the invention. It should be noted that, for convenience of description, only the portions related to the present invention are shown in the drawings.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
It should be noted that in the description of the present application, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature.
It should be noted that unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly and include, for example, fixed or removable connections or integral connections; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
At present, for the heat dispersion that improves the chip among the chip face down mounting process, be provided with the sheetmetal on the chip surface, the sheetmetal is as the articulamentum of chip and heat dissipation cover, the sheetmetal need use resin class scaling powder to get rid of sheetmetal surface oxide so that weld, but resin class scaling powder causes the metal to splash at heating process high temperature, lead to around electric capacity, the chip short circuit, the gas that volatilizees simultaneously in heating process can form the cavity in the articulamentum, influence the product heat dissipation, and resin class scaling powder can remain after the welding is accomplished, influence the reliability of product.
According to the welding method provided by the embodiment of the application, the resin scaling powder is not needed, and the reduction reaction is carried out on the metal oxides on the surfaces of the parts to be welded and the welding parts at high temperature by the reducing gas, so that the intermetallic welding is completed, and the influence of the resin scaling powder on the performance of products is further avoided. The welding method of the embodiment of the application is particularly suitable for processing semiconductor materials, such as chip packaging and the like.
An embodiment of the present application provides a welding method, as shown in fig. 1, including:
s1, oxidizing the parts to be welded and the welding parts to form metal oxide layers on the surfaces of the parts to be welded and the welding parts;
the parts to be welded and the welding parts are made of metal materials, such as gold, indium, tin or silver.
The parts to be welded and the welding parts are oxidized, mainly to improve the welding effect, so that the parts to be welded and the welding parts are combined more tightly. The metal surface oxide reacts with the reducing gas, so that the metal oxide is reduced in the heating process, and the welding of the parts to be welded and the welding part is completed.
The oxidation treatment may be performed by directly placing a metal that is very easily oxidized in air, or may be performed by performing oxidation treatment in an oxygen atmosphere for a metal that is inactive, as long as it is ensured that a metal oxide is formed on the surfaces of the parts to be welded and the welding portion, which is not particularly limited in the embodiments of the present application.
And S2, in the atmosphere containing the reducing gas, the parts to be welded and the welding parts are welded through reflow soldering, so that the parts to be welded and the welding parts are tightly combined.
The parts to be soldered and the soldered portions are soldered by reflow soldering, and any reflow soldering technique may be used, such as gas reflow soldering, laser reflow soldering, infrared reflow soldering, and induction reflow soldering.
According to the welding method, the parts to be welded and the welding parts are welded through reflow soldering under the atmosphere of reducing gas, the welding effect is reliable, meanwhile, the use of the resin scaling powder is avoided, the cost is saved, the phenomenon that the resin scaling powder splashes in the heating process, short circuit is caused, and the reliability of products is affected due to the fact that the resin scaling powder is remained after welding is completed can be effectively avoided.
As a realizable manner, S1, subjecting the parts to be welded and the weld site to oxidation treatment, including:
the parts to be welded and the welded part were left in an air atmosphere for 4 to 8 hours.
In the embodiment, the parts to be welded and the welding parts are directly placed in the air atmosphere for 4-8 hours for oxidation treatment, the operation method is simple, and the cost is saved. And the powder is placed in an air atmosphere for oxidation treatment, so that the condition that the formed oxide layer is too thick to cause the extension of the subsequent reduction time is avoided, and the reduced particle layer is thick to influence the welding effect is avoided.
As a practical aspect, S2 is a method for soldering a member to be soldered and a soldering portion by reflow soldering in an atmosphere containing a reducing gas, the method including:
after the temperature is kept at 140-155 ℃ for a period of time, the temperature is raised to 230-250 ℃ for welding.
The gas reflow soldering adopted by the embodiment mainly comprises four parts of preheating, reaction, decomposition and cooling. The reducing gas is kept ventilated before the preheating process so as to exhaust other gases in the reaction space, and in the chip packaging process, the used metal heat dissipation layer is generally an indium sheet, the melting point is 150-160 ℃, so that the heat preservation is needed to be firstly carried out for about 10min at 140-155 ℃ in the reflow soldering process for the reaction of the reducing gas and the metal oxide for soldering, and then the reaction is carried out at 230-250 ℃ so as to decompose the reducing gas, and finally the soldering is completed.
As an achievable mode, welding is carried out for 5min to 10min at 230 ℃ to 250 ℃. The embodiment is beneficial to ensuring that the reductive gas is fully decomposed, and simultaneously ensuring that the packaging effect of the product is not influenced.
The atmosphere containing the reducing gas is one or a mixture of several of formic acid gas, acetic acid gas and hydrogen gas. In a specific embodiment, the reducing gas is formic acid gas or formic acid and hydrogen, which can effectively reduce the metal oxide layer on the surface to be welded, so that the oxide on the metal surface is fully and effectively utilized, and the requirements of the surfaces of the parts to be welded and the welding part before welding are reduced.
In a preferred embodiment, the formic acid gas is a formic acid gas catalyzed by Pt. The formic acid gas catalyzed by Pt is adopted, so that the reduction efficiency can be improved, and the welding is accelerated.
As a practical way, the flow rate of the reducing gas is 35-50 sccm. The flow of the embodiment is beneficial to completely removing other gases in the reaction space, and meanwhile, the flow is also beneficial to fully reacting with metal oxide, so that a good welding effect is realized.
In a second aspect, an embodiment of the present invention provides a chip packaging method, as shown in fig. 2 and 3, including:
s11, dividing the upper surface of the substrate 1 into a first area and a second area surrounding the first area, arranging the chip 2 in the first area, and arranging the solder ball layer 3 on the lower surface of the substrate 1;
s12, arranging the metal heat dissipation layer 4 on the surface of the chip 2;
s13, covering the heat dissipation cover 5 above the substrate, and enabling the heat dissipation cover 5 to be in contact with the metal heat dissipation layer 4, wherein the heat dissipation cover 5 is a part to be welded, and the metal heat dissipation layer 4 is a welding part;
s14, welding the heat dissipation cover 5 and the metal heat dissipation layer 4 by the welding method of the first aspect, so that the heat dissipation cover 5 and the metal heat dissipation layer 4 are tightly attached to each other.
According to the chip packaging method disclosed by the embodiment, the heat dissipation cover and the metal heat dissipation layer are welded through reflow soldering under the atmosphere of reducing gas, the welding effect is reliable, meanwhile, the use of resin soldering flux is avoided, the cost is saved, the phenomenon that the resin soldering flux splashes in the heating process, the chip is short-circuited, and the reliability of the chip is affected due to the fact that the resin soldering flux is remained after the welding is finished can be effectively avoided.
As a practical way, after welding the heat dissipation cover 5 and the metal heat dissipation layer 4, the method further comprises:
the lower surface of the substrate 1 is provided with a tin ball layer 3, and the tin ball layer 3 is welded on the PCB.
This embodiment passes through the solder ball layer with the base plate and welds on the PCB board, is favorable to accomplishing the post production of chip product, guarantees that the chip realizes the electricity function.
As shown in fig. 4 and 5, a metal layer 52 is plated on the contact area between the heat dissipation cover 5 and the metal heat dissipation layer 4, and at least two through holes 53 are opened on the sidewall 51 of the heat dissipation cover 5.
The metal layer 52, generally made of gold, is plated in the contact area between the heat dissipation cover and the metal heat dissipation layer, so that the heat dissipation cover and the metal heat dissipation layer can be attached to each other, and the heat dissipation performance can be improved effectively.
Because the heat dissipation cover is contacted with the metal heat dissipation layer, the metal oxide on the surfaces of the heat dissipation cover and the metal heat dissipation layer can not fully react with the reducing gas, the welding effect of the heat dissipation cover and the metal heat dissipation layer is poor, and the heat dissipation cover and the metal heat dissipation layer can not be tightly attached to each other, therefore, a support part is arranged between the heat dissipation cover and the metal heat dissipation layer, for example, glue is coated on the support part, the support part is used for forming a gap between the heat dissipation cover and the metal heat dissipation layer, and the support part can be gasified and volatilized in the reflow soldering heating process;
in some embodiments, in order to make the heat dissipation cover and the surface metal oxide of the metal heat dissipation layer sufficiently contact with the reducing gas, the sidewall of the heat dissipation cover is perforated or hollowed for the reducing gas to pass through, wherein the shape of the opening may be a regular or irregular shape such as a circle, a square, a triangle, and the like, which is not specifically limited in this application.
In summary, the chip packaging method disclosed by the application has the advantages that the reductive gas is used, so that the oxides on the surfaces of the heat dissipation cover and the metal heat dissipation layer are subjected to a reduction reaction in the heating process, the welding is completed, the close adhesion between the heat dissipation cover and the metal heat dissipation layer as well as between the heat dissipation cover and the chip is effectively realized, the rate of finished products is improved, and the problem of low rate of finished products of the chip caused by the existing use of resin soldering flux is effectively avoided; the method reduces the process of spraying the resin, simplifies the process and improves the processing efficiency.
The above description is only a preferred embodiment of the application and is illustrative of the principles of the technology employed. It will be appreciated by a person skilled in the art that the scope of the invention as referred to in the present application is not limited to the embodiments with a specific combination of the above-mentioned features, but also covers other embodiments with any combination of the above-mentioned features or their equivalents without departing from the inventive concept. For example, the above features may be replaced with (but not limited to) features having similar functions disclosed in the present application.
Claims (10)
1. A soldering method for a semiconductor package, comprising:
carrying out oxidation treatment on a part to be welded and a welding part to form a metal oxide layer on the surfaces of the part to be welded and the welding part;
and soldering the parts to be soldered and the soldering part by reflow soldering in an atmosphere containing a reducing gas so that the parts to be soldered and the soldering part are tightly bonded.
2. A welding method according to claim 1, characterized in that the parts to be welded and the weld are subjected to an oxidation treatment comprising:
the parts to be welded and the welded part were left in an air atmosphere for 4 to 8 hours.
3. A soldering method according to claim 1, wherein the parts to be soldered and the soldering portion are soldered by reflow soldering in an atmosphere containing a reducing gas, comprising:
after the temperature is kept at 140-155 ℃ for a period of time, the temperature is raised to 230-250 ℃ for welding.
4. A welding method according to claim 3, characterized in that welding is carried out at 230-250 ℃ for 5-10 min.
5. The welding method of claim 1, wherein the atmosphere containing the reducing gas is one or a mixture of formic acid gas, acetic acid gas and hydrogen gas.
6. A welding method according to claim 5, characterized in that said formic acid gas is Pt-catalyzed formic acid gas.
7. A welding method according to claim 1, characterized in that the flow rate of said reducing-containing gas is 35-50 seem.
8. A method of chip packaging, comprising:
the upper surface of the substrate is divided into a first area and a second area surrounding the first area, a chip is arranged in the first area, and a tin ball layer is arranged on the lower surface of the substrate;
arranging a metal heat dissipation layer on the surface of the chip;
arranging a heat dissipation cover above the substrate, wherein the heat dissipation cover is in contact with the metal heat dissipation layer, the heat dissipation cover is a part to be welded, and the metal heat dissipation layer is a welding part;
the welding method of claim 1 is used for welding the heat dissipation cover and the metal heat dissipation layer so as to enable the heat dissipation cover and the metal heat dissipation layer to be tightly attached.
9. The method of claim 8, wherein after welding the heat sink cap and the metal heat sink layer, the method further comprises:
and the lower surface of the substrate is provided with a tin ball layer, and the tin ball layer is welded on the PCB.
10. The method of claim 8, wherein a metal layer is plated on a region of the heat sink in contact with the metal heat sink, and at least two through holes are formed in a sidewall of the heat sink.
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| CN202110475537.3A CN113380636B (en) | 2021-04-29 | 2021-04-29 | Welding method and chip packaging method |
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| CN202110475537.3A CN113380636B (en) | 2021-04-29 | 2021-04-29 | Welding method and chip packaging method |
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| CN113380636B CN113380636B (en) | 2024-03-26 |
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