CN113379622A - Pixel size calibration method, device and equipment for electron beam defect detection - Google Patents
Pixel size calibration method, device and equipment for electron beam defect detection Download PDFInfo
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Abstract
The application relates to a pixel size calibration method, a device and equipment for electron beam defect detection, which comprise the following steps: reading the position of the created marking point template on the workbench; controlling the workbench to move to the position of an image matching point determined by taking the position of the marking point template on the workbench as the center, and acquiring an image of the workbench after moving to the position of the image matching point as a calibration image; obtaining the pixel deviation number of the calibration image according to the marking point template and the calibration image; and obtaining the pixel size currently used for detecting the electron beam defects based on the pixel deviation number. The method does not need to manually calculate the number of pixels occupied by the standard size constant in the transverse direction and the longitudinal direction, can realize a full-automatic calibration process, avoids the influence of human factors on a calibration result, and further improves the accuracy of the calibration result.
Description
Technical Field
The present disclosure relates to the field of semiconductor device inspection technologies, and in particular, to a method, an apparatus, and a device for calibrating a pixel size for electron beam defect inspection.
Background
In recent years, with the development of new technologies such as internet of things and artificial intelligence, the demand of semiconductor chips is increasing day by day, and the chip manufacturing process is becoming more and more delicate. Increasingly sophisticated manufacturing processes reduce chip power and also limit the production yield of semiconductor manufacturing. In the semiconductor manufacturing process of the technology node below 28nm, the production yield can be effectively improved by means of electron beam defect inspection (EBI). Among them, calibration of the EBI apparatus, especially calibration of the pixel size of the EBI apparatus, is essential before electron beam defect detection is performed.
In general, the pixel size calibration of EBI devices is usually performed by manual calibration. The manual calibration mode has certain subjective factors, so that the calibration process is time-consuming and labor-consuming, and the calibration result is not accurate due to deviation caused by human factors.
Disclosure of Invention
In view of the above, the present application provides a pixel size calibration method for electron beam defect detection, which can effectively improve the accuracy of the pixel size calibration result.
According to an aspect of the present application, there is provided a pixel size calibration method for electron beam defect inspection, including:
reading the position of the created marking point template on the workbench;
controlling the workbench to move to the position of an image matching point determined by taking the position of the marking point template on the workbench as the center, and acquiring an image after the workbench moves to the position of the image matching point as a calibration image;
obtaining the pixel deviation number of the calibration image according to the marking point template and the calibration image;
and obtaining the pixel size currently used for detecting the electron beam defects based on the pixel deviation number.
In a possible implementation manner, when the image matching point is determined by taking the position of the marking point template on the workbench as the center, the positions of the marking point template after being shifted by a first distance along the horizontal direction and a second distance along the vertical direction are respectively taken as the image matching point in the transverse direction and the image matching point in the longitudinal direction by taking the position of the marking point template on the workbench as the center.
In a possible implementation manner, obtaining the pixel deviation number of the calibration image according to the marker point template and the calibration image includes:
obtaining the transverse pixel deviation number according to the calibration image corresponding to the mark point template and the image matching point in the transverse direction;
and obtaining the longitudinal pixel deviation number according to the calibration image corresponding to the mark point template and the graphic matching points in the longitudinal direction.
In a possible implementation manner, when obtaining the pixel size currently used for the electron beam defect detection based on the pixel deviation number, the method includes:
calculating to obtain a transverse pixel size based on the transverse pixel deviation number and the first distance;
and calculating to obtain the longitudinal pixel size based on the longitudinal pixel deviation number and the second distance.
In a possible implementation manner, when the pixel deviation number of the calibration image is obtained according to the mark point template and the calibration image, the pixel deviation number is obtained in an image matching manner.
In a possible implementation manner, the mark point template is created by selecting mark points from a standard film and based on the selected mark points;
the marking points are patterns with unique identification selected from the standard film.
In one possible implementation, the first distance is equal to the second distance;
the image matching points in the transverse direction and the image matching points in the longitudinal direction both comprise two image matching points;
the two image matching points in the transverse direction are respectively positioned at the left side and the right side of the position of the marking point template on the workbench;
the two image matching points in the longitudinal direction are respectively positioned at the upper side and the lower side of the position of the marking point template on the workbench.
According to another aspect of the present application, there is also provided a pixel size calibration apparatus for electron beam defect inspection, including: the device comprises a position recording module, a workbench moving module, an image acquisition module, a pixel deviation acquisition module and a pixel size determination module;
the position recording module is configured to record the position of the created marking point template on the workbench;
the workbench moving module is configured to control the workbench to move to an image matching point position determined by taking the position of the marking point template on the workbench as the center;
the image acquisition module is configured to acquire an image after the workbench is moved to the image matching point position as a calibration image after the workbench moving module drives the workbench to the image matching point position;
the pixel deviation acquiring module is configured to obtain the pixel deviation number of the calibration image according to the marking point template and the calibration image;
the pixel size acquisition module is configured to obtain the pixel size currently used for electron beam defect detection based on the pixel deviation number.
According to another aspect of the present application, there is also provided a pixel size calibration apparatus for electron beam defect inspection, including:
a processor;
a memory for storing processor-executable instructions;
wherein the processor is configured to execute the executable instructions to implement any of the methods described above.
According to another aspect of the present application, there is also provided a non-transitory computer readable storage medium having stored thereon computer program instructions which, when executed by a processor, implement the method of any of the preceding.
The method comprises the steps of establishing a mark point template, recording the position of the mark point template on a workbench, determining an image matching point for calibration based on the recorded position of the mark point template on the workbench, and acquiring a picture of the workbench at the image matching point as a calibration image to calibrate the pixel size of electron beam defect detection. Meanwhile, when the pixel size calibration method is adopted, the number of pixels occupied by the standard size constant in the transverse direction and the longitudinal direction does not need to be calculated manually, the full-automatic calibration process can be realized, the influence of human factors on the calibration result is avoided, and the accuracy of the calibration result is further improved.
Other features and aspects of the present application will become apparent from the following detailed description of exemplary embodiments, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate exemplary embodiments, features, and aspects of the application and, together with the description, serve to explain the principles of the application.
FIG. 1 shows a flow chart of a pixel size calibration method for electron beam defect inspection according to an embodiment of the present application;
FIG. 2 is a schematic diagram illustrating the determination of image matching points in a pixel size calibration method for electron beam defect detection according to an embodiment of the present application;
fig. 3 is a schematic diagram illustrating a pixel size calibration method for electron beam defect detection according to an embodiment of the present application, in which image matching is performed on a mark point template and a calibration image to obtain a pixel deviation number of the calibration image;
FIG. 4 is a schematic diagram illustrating the principle of image matching in the pixel size calibration method for electron beam defect detection according to the embodiment of the present application;
FIG. 5 is a block diagram of a pixel size calibration apparatus for electron beam defect inspection according to an embodiment of the present application;
fig. 6 shows a block diagram of a pixel size calibration apparatus for electron beam defect detection according to an embodiment of the present application.
Detailed Description
Various exemplary embodiments, features and aspects of the present application will be described in detail below with reference to the accompanying drawings. In the drawings, like reference numbers can indicate functionally identical or similar elements. While the various aspects of the embodiments are presented in drawings, the drawings are not necessarily drawn to scale unless specifically indicated.
The word "exemplary" is used exclusively herein to mean "serving as an example, embodiment, or illustration. Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments.
Furthermore, in the following detailed description, numerous specific details are set forth in order to provide a better understanding of the present application. It will be understood by those skilled in the art that the present application may be practiced without some of these specific details. In some instances, methods, means, elements and circuits that are well known to those skilled in the art have not been described in detail so as not to obscure the present application.
Fig. 1 shows a flow chart of a pixel size calibration method for electron beam defect inspection according to an embodiment of the present application. As shown in fig. 1, the method includes: and step S100, reading the position of the created marking point template Pattern on the workbench. Here, it should be noted that the mark point template Pattern refers to a template image created from mark points selected from standard films. The method comprises the steps of placing a standard film on a workbench of electron beam defect detection equipment, selecting a pattern with a unique identifier from the standard film as a marking point, then creating a corresponding marking point template by taking the selected marking point as a reference, and simultaneously recording the position of the marking point template on the workbench.
It should be further noted that the position of the created mark point template Pattern on the workbench can be flexibly set according to actual situations, and is not specifically limited herein. That is, the position of the created mark point template Pattern on the workbench may be preset or may be adjusted according to the actual situation.
After the position of the mark point template Pattern on the workbench is recorded, step S200 may be executed, the workbench is controlled to move to the position of the image matching point determined by taking the position of the mark point template Pattern on the workbench as the center, and the image after the workbench moves to the position of the image matching point is acquired as the calibration image.
Here, it should be noted that the image matching point needs to be determined first when the control table is moved. The determination of the image matching points can be realized by taking the marking point template Pattern as the center to perform the offset in the horizontal direction and the vertical direction.
Therefore, after the image matching points are determined, the workbench can be controlled to move to different image matching points, and images of the workbench at different image matching point positions are obtained through photographing and serve as calibration images. Wherein, as can be understood by those skilled in the art, when the control table is moved to different image matching point positions, it can be realized in two ways. One is to pre-store the offset distance between the determined image matching point and the position of the mark point template Pattern on the workbench, and then to call the offset distance of different image matching points, and then to control the workbench to correspondingly move according to the called offset distance. And the other method is to directly store the position coordinates of the determined image matching points, and then control the movement of the workbench according to the read position coordinates by directly reading the position coordinates of each image matching point.
After the workbench is moved to the position of the image matching point, the image of the workbench provided with the mark point template Pattern at each image matching point can be obtained in a photographing mode. And the images of the workbench provided with the marking point template Pattern at the positions of the matching points of the images are calibration images.
Further, in step S300, the pixel deviation number of the calibration image is obtained according to the mark point template Pattern and the calibration image. Finally, step S400 is executed again to obtain the pixel size currently used for the electron beam defect detection based on the pixel deviation number.
Therefore, according to the pixel size calibration method for electron beam defect detection in the embodiment of the application, the mark point template Pattern is created, the position of the mark point template Pattern on the workbench is recorded, then the image matching point for calibration is determined based on the recorded position of the mark point template Pattern on the workbench, and the picture of the workbench at the image matching point is obtained as the calibration image to calibrate the pixel size of electron beam defect detection. Meanwhile, when the pixel size calibration method is adopted, the number of pixels occupied by the standard size constant in the transverse direction and the longitudinal direction does not need to be calculated manually, the full-automatic calibration process can be realized, the influence of human factors on the calibration result is avoided, and the accuracy of the calibration result is further improved.
Further, in the present applicationIn the calibration method of the embodiment, the mark point template Pattern may be created by selecting mark points from the standard sheet and based on the selected mark points. It should be noted that the mark points selected from the standard film should be a pattern with unique identification in the standard film. As shown in fig. 2, the pattern of the mark points may be a cross, may be other images, may also be a graphic array, and specifically, the mark points of different graphics may be selected according to different standard sheets, where the pattern of the mark points is not specifically limited. After the Pattern with the unique identification is selected from the standard film as the mark point, the selected mark point can be created as a mark point template Pattern, and the position of the mark point template Pattern on the workbench is recorded. Here, the position of the mark point template Pattern on the table recorded in step S100 means the position coordinates (x) of the mark point template Pattern on the table before the table is moved0，y0)。
Meanwhile, it should be noted that when the mark point is selected from the standard wafer, it may be in the OM mode or the EOS mode of the electron beam defect detecting apparatus. Here, as will be understood by those skilled in the art, EBI apparatuses (i.e., electron beam defect inspection apparatuses) are generally equipped with an OM lens and an SEM system (also commonly referred to as electron optical system EOS). The OM lens FOV (field of view) is relatively large and is mainly responsible for overall observation and rough positioning; the EOS field of view is small and is mainly responsible for observing fine structures. Therefore, when the marker point is selected, the marker point can be selected in the OM mode or the EOS mode. And then, the selected mark points are created as mark point templates Pattern. At the same time, the position (x) of the created marking point template Pattern on the workbench is recorded0，y0)。
Furthermore, after the position of the created marking point template Pattern on the workbench is recorded in the above manner, the workbench can be moved, and the workbench is moved to the determined image matching point to acquire the calibration image.
Here, it should be noted that before moving the table, it is necessary to first move the tableThe location of the image matching point is determined. In one possible implementation, the position (x) of the Pattern on the workbench can be marked by using the mark point template0，y0) And selecting a preset number of points in the horizontal direction and the vertical direction as image matching points. Namely, around the position of the marking point template Pattern on the workbench, a preset number of points are selected around the marking point template Pattern as image matching points.
Specifically, the position of the marking point template Pattern on the workbench may be used as a center, and the position shifted by the first distance in the horizontal direction may be used as an image matching point in the lateral direction. Meanwhile, the position of the marking point template Pattern on the workbench is taken as the center, and the position after the displacement of the marking point template Pattern by the second distance along the vertical direction is taken as the image matching point in the longitudinal direction.
More specifically, the number of the selected image matching points may be four. The number of the image matching points in the transverse direction is two, and the number of the image matching points in the longitudinal direction is also two. Referring to fig. 2, the image matching point in the lateral direction may be determined by a position shifted to the left and right by a first distance δ x in the horizontal direction, respectively, centering on the position of the marker point template Pattern on the table. That is, the position coordinates of the image matching points in the lateral direction are respectively: (x)0+δx,y0) And (x)0-δx,y0). The image matching point in the longitudinal direction can be determined by taking the position of the marker point template Pattern on the workbench as the center and respectively shifting the positions upwards and downwards by the second distance deltay along the vertical direction. That is, the position coordinates of the image matching points in the longitudinal direction are respectively: (x)0，y0+ δ y) and (x)0，y0-δy)。
Wherein, in a possible implementation mode, the position (x) of the Pattern on the workbench is marked by the mark point0，y0) As a center, when the image matching point is determined by means of offset in the horizontal direction and the vertical direction, the offset (i.e. the first distance) in the horizontal direction and the offset (i.e. the second distance) in the vertical direction are equal, so as to ensure that the position of the marking point template Pattern on the workbench is in the determined imageThe central position of the area surrounded by the matching points.
In addition, it should be noted that, when the image matching point corresponding to the position of the mark point template Pattern on the workbench is determined by the horizontal offset and the vertical offset, the values of the offset distances (i.e., the first distance offset in the horizontal direction and the second distance offset in the vertical direction) may be flexibly set according to the actual situation. The larger the value ranges of the first distance δ x and the second distance δ y are theoretically, the more accurate the value ranges are. However, the moving distance is limited to the field of view range of the OM mode and the EOS mode, and the mark point with an excessively large moving distance may run out of the field of view range, thereby causing image matching failure. It should be ensured that as large distances δ x and δ y as possible are present over the field of view. For example, assuming that the OM mode has a field of view of 100um x 100um, if the mark dot size is ignored, the first distance δ x and the second distance δ y can be theoretically 50 um. In practical applications, the first distance δ x and the second distance δ y are typically 25um to ensure successful image matching considering that the mark points have a certain size and the OM mode and the EOS mode have a certain offset in the center of the field of view.
That is, the determined image matching point should be able to see the marked point on the table in both the OM mode and the EOS mode after the table is moved to the corresponding position.
In one possible implementation, the offset distance may be set to different values in the OM mode and the EOS mode. Generally, in the OM mode, the value of the first distance may be set to be one fourth of a horizontal pixel value of an image obtained by photographing the workbench in the OM mode; the value of the second distance can also be set to be one fourth of the longitudinal pixel value of the image obtained by photographing the workbench in the OM mode. Similarly, in the EOS mode, the value of the first distance and the value of the second distance may be a quarter of a horizontal pixel value and a quarter of a vertical pixel value of an image obtained by photographing the workbench in the EOS mode, respectively.
Further, after the image matching points are determined, the workbench can be moved, and the workbench is sequentially moved to the positions of the image matching points and photographed to acquire corresponding images as calibration images. The movement control method of the workbench has been described in the foregoing by way of example, and will not be described herein again.
In addition, according to the foregoing embodiment, since the number of the image matching points to be selected is four, the calibration images obtained after the stage is moved to the image matching points are also four, and may be respectively marked as: image _1, Image _2, Image _3, and Image _4, as shown in fig. 2.
And then, according to the acquired calibration image, corresponding image processing is carried out through the created marking point template Pattern to obtain the pixel deviation number of each calibration image. Based on the obtained calibration image, when obtaining the pixel deviation number of the calibration image according to the mark point template Pattern and the calibration image, the method specifically includes the following steps:
and obtaining the transverse pixel deviation number according to the marking point template Pattern and the calibration image corresponding to the image matching point in the transverse direction. And obtaining the longitudinal pixel deviation number according to the calibration image corresponding to the Pattern matching points in the longitudinal direction and the mark point template Pattern.
Furthermore, when the pixel deviation number of the calibration image is obtained according to the mark point template Pattern and the calibration image, the pixel deviation number can be obtained in an image matching mode. Referring to fig. 3, the specific process of image matching is as follows: the brown large picture is a picture to be detected, the red small picture is a template picture, and the pattern matching method is to search the position of the same pattern of the template picture in the picture to be detected and output the coordinate of the pattern.
As shown in fig. 3, the template picture size w x h; the size W of the picture to be detected is H; the template pattern is moved in units of pixels, and the horizontal and vertical movement ranges are (W-W +1) and (H-H +1), respectively.
After each movement, the similarity of the overlapping area of the template and the picture to be detected is calculated, and the coordinate value corresponding to the result with the highest similarity is output, namely the best matching position.
The similarity calculation method can be realized by a square error matching method, a correlation coefficient matching method and the like. As will be understood by those skilled in the art, the squared error matching method refers to matching using squared error, with the best match value being 0; the worse the match, the larger the match value. The correlation matching method refers to the multiplication operation; a larger number indicates a better match. The correlation coefficient matching method refers to matching based on coefficients, where 1 represents perfect matching; -1 represents the worst match.
That is, referring to fig. 2 and 4, when the mark point template Pattern and the calibration image are subjected to image matching to obtain the corresponding pixel deviation number according to the previous image matching principle, the transverse pixel deviation number can be obtained according to the mark point template Pattern and the calibration image corresponding to the image matching point in the transverse direction; and obtaining the longitudinal pixel deviation number according to the calibration image corresponding to the Pattern matching points in the longitudinal direction and the mark point template Pattern.
That is, by performing Image matching on the mark point template Pattern and each of Image _1, Image _2, Image _3, and Image _4, the pixel deviation number of Image _1, the pixel deviation number of Image _2, the pixel deviation number of Image _3, and the pixel deviation number of Image _4 are respectively expressed as: PixelShift _1, PixelShift _2, PixelShift _3, and PixelShift _ 4.
And then obtaining the pixel size currently used for detecting the electron beam defects based on the obtained pixel deviation number. Among other things, in one possible implementation, this can be achieved in the following manner.
Based on the number of lateral pixel deviations and the first distance, a lateral pixel size is calculated. And calculating the vertical pixel size based on the vertical pixel deviation number and the second distance.
More specifically, when the number of the determined image matching points is four and the determined image matching points respectively correspond to the image matching points located on the left side and the right side of the mark point template Pattern in the horizontal direction and the image matching points located on the upper side and the lower side of the mark point template Pattern in the vertical direction, the horizontal pixel size is calculated and obtained based on the horizontal pixel deviation number and the first distance, and a formula can be used:
and (4) calculating.
Wherein δ x is a first distance; the PixelShift _2 is the pixel deviation number obtained when the Image matching is carried out on the calibration Image (namely, Image _2) corresponding to the Image matching point positioned on the right side of the mark point template Pattern and the mark point template Pattern; the PixelShift _1 is the pixel deviation number obtained when the calibration Image (i.e., Image _1) corresponding to the Image matching point located on the left side of the marker point template Pattern and the marker point template Pattern is subjected to Image matching.
Similarly, if the vertical pixel size is calculated based on the vertical pixel deviation number and the second distance, the formula can be given as follows:
and (4) calculating.
Wherein δ y is a second distance; PixelShift _3 is the pixel deviation number obtained when the mark point template Pattern is subjected to Image matching with a calibration Image (i.e., Image _3) corresponding to an Image matching point positioned on the upper side of the mark point template Pattern; the PixelShift _4 is the number of pixel deviations obtained when the calibration Image (i.e., Image _4) corresponding to the Image matching point located on the lower side of the marker point template Pattern and the marker point template Pattern is subjected to Image matching.
The horizontal pixel size and the vertical pixel size can be obtained through the method. And then, calibrating the pixel size of the electron beam defect detection based on the obtained horizontal pixel size and the vertical pixel size.
According to the pixel size calibration method for electron beam defect detection, the pixel deviation number of each calibration image is obtained through calculation in an image matching mode, then the pixel size is calibrated according to the obtained pixel deviation number and the actual distance of the workbench of the electron beam defect detection equipment, and the influence caused by human factors is effectively avoided. Moreover, when the calibration method of the embodiment of the application is used for calibrating and detecting the pixel size of the electron beam defect detection equipment, the mark point template can be automatically updated during each calibration, so that the image matching success rate is improved, the condition that the mark point template is changed due to long-time bombardment of an electron beam and the image matching is realized, the automatic calibration of the pixel size is realized, the calibration efficiency is improved, and the accuracy of the calibration result is effectively ensured.
Correspondingly, based on any one of the pixel size calibration methods for electron beam defect detection, the application also provides a pixel size calibration device for electron beam defect detection. Since the working principle of the pixel size calibration device for electron beam defect detection provided by the present application is the same as or similar to that of the pixel size calibration method provided by the present application, repeated descriptions are omitted.
Referring to fig. 5, the present application provides a pixel size calibration apparatus 100 for electron beam defect inspection, including: a position reading module 110, a stage moving module 120, an image acquisition module 130, a pixel deviation acquisition module 140, and a pixel size determination module 150. Wherein, the position reading module 110 is configured to read the position of the created marking point template on the workbench. The position of the created mark point template on the workbench and the mark point template can be obtained by writing in a configuration file mode and then reading.
A stage moving module 120 configured to control the stage to move to the position of the image matching point determined centering on the position of the marking point template on the stage. And the image acquisition module 130 is configured to acquire an image of the workbench moving to the image matching point position as a calibration image after the workbench moving module 120 drives the workbench to the image matching point position. And a pixel deviation acquiring module 140 configured to obtain the pixel deviation number of the calibration image according to the marking point template and the calibration image. And a pixel size determining module 150 configured to obtain a pixel size currently used for electron beam defect detection based on the pixel deviation number.
Still further, according to another aspect of the present application, there is also provided a pixel size calibration apparatus 200 for electron beam defect inspection. Referring to fig. 6, a pixel size calibration apparatus 200 for electron beam defect inspection according to an embodiment of the present application includes a processor 210 and a memory 220 for storing instructions executable by the processor 210. Wherein the processor 210 is configured to execute the executable instructions to implement any of the pixel size calibration methods for electron beam defect inspection described above.
Here, it should be noted that the number of the processors 210 may be one or more. Meanwhile, in the pixel size calibration apparatus 200 for electron beam defect inspection according to the embodiment of the present application, an input device 230 and an output device 240 may be further included. The processor 210, the memory 220, the input device 230, and the output device 240 may be connected via a bus, or may be connected via other methods, which is not limited in detail herein.
The memory 220, which is a computer-readable storage medium, may be used to store software programs, computer-executable programs, and various modules, such as: the application provides a program or a module corresponding to the pixel size calibration method for electron beam defect detection. The processor 210 executes various functional applications and data processing of the pixel size calibration apparatus 200 for electron beam defect inspection by executing software programs or modules stored in the memory 220.
The input device 230 may be used to receive an input number or signal. Wherein the signal may be a key signal generated in connection with user settings and function control of the device/terminal/server. The output device 240 may include a display device such as a display screen.
According to another aspect of the present application, there is also provided a non-transitory computer readable storage medium having stored thereon computer program instructions which, when executed by the processor 210, implement any of the foregoing pixel size calibration methods for electron beam defect detection.
Having described embodiments of the present application, the foregoing description is intended to be exemplary, not exhaustive, and not limited to the disclosed embodiments. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terminology used herein is chosen in order to best explain the principles of the embodiments, the practical application, or improvements made to the technology in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein.
Claims (10)
1. A pixel size calibration method for electron beam defect inspection, comprising:
reading the position of the created marking point template on the workbench;
controlling the workbench to move to the position of an image matching point determined by taking the position of the marking point template on the workbench as the center, and acquiring an image after the workbench moves to the position of the image matching point as a calibration image;
obtaining the pixel deviation number of the calibration image according to the marking point template and the calibration image;
and obtaining the pixel size currently used for detecting the electron beam defects based on the pixel deviation number.
2. The method according to claim 1, wherein when the image matching point is determined centering on the position of the marker point template on the table, the image matching point in the lateral direction and the image matching point in the longitudinal direction are determined by using the position of the marker point template on the table as a center and shifting the positions by a first distance in the horizontal direction and a second distance in the vertical direction, respectively.
3. The method of claim 2, wherein obtaining the number of pixel deviations of the calibration image from the marker point template and the calibration image comprises:
obtaining the transverse pixel deviation number according to the calibration image corresponding to the mark point template and the image matching point in the transverse direction;
and obtaining the longitudinal pixel deviation number according to the calibration image corresponding to the mark point template and the graphic matching points in the longitudinal direction.
4. The method of claim 3, wherein obtaining the current pixel size for electron beam defect detection based on the pixel deviation number comprises:
calculating to obtain a transverse pixel size based on the transverse pixel deviation number and the first distance;
and calculating to obtain the longitudinal pixel size based on the longitudinal pixel deviation number and the second distance.
5. The method according to any one of claims 1 to 4, wherein the pixel deviation number of the calibration image is obtained by image matching according to the marker point template and the calibration image.
6. The method according to any one of claims 1 to 4, wherein the mark point template is created by selecting mark points from a standard film and based on the selected mark points;
the marking points are patterns with unique identification selected from the standard film.
7. The method of claim 2, wherein the first distance is equal to the second distance;
the image matching points in the transverse direction and the image matching points in the longitudinal direction both comprise two image matching points;
the two image matching points in the transverse direction are respectively positioned at the left side and the right side of the position of the marking point template on the workbench;
the two image matching points in the longitudinal direction are respectively positioned at the upper side and the lower side of the position of the marking point template on the workbench.
8. A pixel size calibration apparatus for electron beam defect inspection, comprising: the device comprises a position reading module, a workbench moving module, an image acquisition module, a pixel deviation acquisition module and a pixel size determination module;
the position recording module is configured to read the position of the created marking point template on the workbench;
the workbench moving module is configured to control the workbench to move to an image matching point position determined by taking the position of the marking point template on the workbench as the center;
the image acquisition module is configured to acquire an image after the workbench is moved to the image matching point position as a calibration image after the workbench moving module drives the workbench to the image matching point position;
the pixel deviation acquiring module is configured to obtain the pixel deviation number of the calibration image according to the marking point template and the calibration image;
the pixel size acquisition module is configured to obtain the pixel size currently used for electron beam defect detection based on the pixel deviation number.
9. A pixel size calibration apparatus for electron beam defect inspection, comprising:
a processor;
a memory for storing processor-executable instructions;
wherein the processor is configured to carry out the executable instructions when implementing the method of any one of claims 1 to 7.
10. A non-transitory computer readable storage medium having computer program instructions stored thereon, wherein the computer program instructions, when executed by a processor, implement the method of any of claims 1 to 7.
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| CN202110583651.8A CN113379622A (en) | 2021-05-27 | 2021-05-27 | Pixel size calibration method, device and equipment for electron beam defect detection |
| PCT/CN2021/098314 WO2022246898A1 (en) | 2021-05-27 | 2021-06-04 | Pixel size calibration method, apparatus, and device for electron beam defect detection |
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| CN116863175B (en) * | 2023-08-31 | 2023-12-26 | 中江立江电子有限公司 | Right-angle connector defect identification method, device, equipment and medium |
| CN116912721B (en) * | 2023-09-14 | 2023-12-05 | 众芯汉创(江苏)科技有限公司 | Power distribution network equipment body identification method and system based on monocular stereoscopic vision |
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