CN113363358A - LED chip - Google Patents
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- CN113363358A CN113363358A CN202110601827.8A CN202110601827A CN113363358A CN 113363358 A CN113363358 A CN 113363358A CN 202110601827 A CN202110601827 A CN 202110601827A CN 113363358 A CN113363358 A CN 113363358A
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- 230000004888 barrier function Effects 0.000 claims abstract description 108
- 230000000903 blocking effect Effects 0.000 claims abstract description 72
- 239000002184 metal Substances 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 20
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- 239000010410 layer Substances 0.000 description 378
- 229910002704 AlGaN Inorganic materials 0.000 description 14
- 238000010586 diagram Methods 0.000 description 12
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- 238000005516 engineering process Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
- H10H20/8162—Current-blocking structures
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- H—ELECTRICITY
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
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Abstract
发明提供了一种LED芯片，外延结构包括：第一半导体层；位于第一半导体层一侧上的电流阻挡层；位于电流阻挡层背离第一半导体层上的第二半导体层，第一半导体层和第二半导体层的导电类型相同；位于第二半导体层背离第一半导体层上的位错阻挡层；位于位错阻挡层背离第一半导体层上的有源层；位于有源层背离第一半导体层上的第三半导体层，第三半导体层与第一半导体层的导电类型不同。本发明提供的技术方案，通过设置位错阻挡层能够减小LED芯片的位错密度，同时能够实现应力释放功能，进而降低LED芯片外延生长过程中出现翘曲的情况的几率。以及通过设置电流阻挡层能够实现LED芯片更好的电流阻挡效果，进而保证LED芯片的性能优良。
The invention provides an LED chip, the epitaxial structure includes: a first semiconductor layer; a current blocking layer on one side of the first semiconductor layer; a second semiconductor layer on the current blocking layer away from the first semiconductor layer, the first semiconductor layer The same conductivity type as the second semiconductor layer; the dislocation barrier layer located on the second semiconductor layer away from the first semiconductor layer; the active layer located on the dislocation barrier layer away from the first semiconductor layer; the active layer located away from the first semiconductor layer A third semiconductor layer on the semiconductor layer, and the conductivity type of the third semiconductor layer is different from that of the first semiconductor layer. The technical solution provided by the present invention can reduce the dislocation density of the LED chip by providing the dislocation blocking layer, and at the same time can realize the stress release function, thereby reducing the probability of warpage during the epitaxial growth of the LED chip. And by arranging the current blocking layer, a better current blocking effect of the LED chip can be achieved, thereby ensuring excellent performance of the LED chip.
Description
Technical Field
The present invention relates to the field of semiconductor technologies, and more particularly, to a Light Emitting Diode (LED) chip.
Background
With the development of the light emitting diode technology, the existing light emitting diode is widely applied to the fields of electronics, optics and the like, and has a great deal of development in the aspects of illumination, display and digital code. Moreover, as the application of LEDs (Light Emitting diodes) is gradually expanded, the market demand for LED performance is higher and higher.
Disclosure of Invention
In view of this, the present invention provides an LED chip, which effectively solves the technical problems in the prior art and ensures that the LED chip has excellent performance.
In order to achieve the purpose, the technical scheme provided by the invention is as follows:
an LED chip comprising an epitaxial structure, the epitaxial structure comprising:
a first semiconductor layer;
a current blocking layer on one side of the first semiconductor layer;
a second semiconductor layer located on the current blocking layer and away from the first semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer have the same conductivity type;
a dislocation barrier layer on the second semiconductor layer facing away from the first semiconductor layer;
an active layer on the dislocation blocking layer facing away from the first semiconductor layer, wherein the active layer includes at least one repeating layer in a stack including a barrier layer and a well layer in a stack in a direction toward the active layer;
a third semiconductor layer on the active layer facing away from the first semiconductor layer, the third semiconductor layer being of a different conductivity type than the first semiconductor layer.
Optionally, the epitaxial structure further includes:
a tail barrier layer between the active layer and the third semiconductor layer;
a low temperature layer between the tail barrier layer and the third semiconductor layer;
an electron blocking layer between the low temperature layer and the third semiconductor layer;
and the ohmic contact layer is positioned on one side of the third semiconductor layer, which is far away from the first semiconductor layer.
Optionally, the materials of the first semiconductor layer, the current blocking layer, the second semiconductor layer, the dislocation blocking layer, the barrier layer, the potential well layer, the third semiconductor layer, the tail barrier layer, the low temperature layer, the electron blocking layer, and the ohmic contact layer all include an Al component;
wherein the Al component of the tail barrier layer is greater than the Al component of the dislocation barrier layer, the Al component of the dislocation barrier layer is greater than the Al component of the electron barrier layer, the Al component of the electron barrier layer is greater than the Al component of the current barrier layer, and the Al component of the current barrier layer is greater than the Al component of the barrier layer;
and the Al composition of the barrier layer is greater than or equal to the Al compositions of the first semiconductor layer, the second semiconductor layer, the potential well layer, the low-temperature layer, the third semiconductor layer and the ohmic contact layer.
Optionally, the epitaxial structure further includes: and the auxiliary dislocation barrier layer is positioned on one side of the first semiconductor layer, which faces away from the current barrier layer.
Optionally, the auxiliary dislocation blocking layer, the first semiconductor layer, the current blocking layer, the second semiconductor layer, the dislocation blocking layer, the barrier layer, the potential well layer, the third semiconductor layer, the tail barrier layer, the low temperature layer, the electron blocking layer, and the ohmic contact layer are made of Al components;
wherein the Al component of the tail barrier layer is greater than the Al component of the auxiliary dislocation barrier layer, the Al component of the auxiliary dislocation barrier layer is greater than the Al component of the dislocation barrier layer, the Al component of the dislocation barrier layer is greater than the Al component of the electron barrier layer, the Al component of the electron barrier layer is greater than the Al component of the current barrier layer, and the Al component of the current barrier layer is greater than the Al component of the barrier layer;
and the Al composition of the barrier layer is greater than or equal to the Al compositions of the first semiconductor layer, the second semiconductor layer, the potential well layer, the low-temperature layer, the third semiconductor layer and the ohmic contact layer.
Optionally, the epitaxial structure further includes: the undoped layer is positioned on one side, away from the first semiconductor layer, of the auxiliary dislocation blocking layer;
and the buffer layer is positioned on one side of the undoped layer, which is far away from the first semiconductor layer.
Optionally, thicknesses of the first semiconductor layer and the second semiconductor layer are greater than thicknesses of the auxiliary dislocation blocking layer and the dislocation blocking layer.
Optionally, the materials of the potential well layer and the ohmic contact layer further include an In component, wherein the In component of the potential well layer is greater than or equal to the In component of the ohmic contact layer.
Optionally, the LED chip includes: the transparent conducting layer is positioned on one side, away from the current blocking layer, of the first semiconductor layer;
the first electrode is positioned on one side, away from the current blocking layer, of the transparent conducting layer;
and, the LED chip includes: the metal reflecting layer is positioned on one side, away from the third semiconductor layer, of the ohmic contact layer;
the bonding layer is positioned on one side, away from the third semiconductor layer, of the metal reflecting layer;
the conductive substrate is positioned on one side, away from the third semiconductor layer, of the bonding layer;
and the second electrode is positioned on one side of the conductive substrate, which faces away from the third semiconductor layer.
Optionally, the LED chip includes: the metal reflecting layer is positioned on one side, away from the third semiconductor layer, of the ohmic contact layer;
the dielectric layer is positioned on one side, away from the third semiconductor layer, of the metal layer reflection layer, wherein the LED chip comprises at least one first through hole and at least one second through hole on one side of the dielectric layer, the first through hole exposes the first semiconductor layer, the second through hole exposes the metal reflection layer, and the dielectric layer covers the side wall of the first through hole;
a first electrode in contact with the first semiconductor layer through the first via hole, and a second electrode in contact with the metal reflective layer through the second via hole;
and, the LED chip includes: and the epitaxial substrate is positioned on one side of the epitaxial structure, which is far away from the first electrode.
Compared with the prior art, the technical scheme provided by the invention at least has the following advantages:
the invention provides an LED chip, which comprises an epitaxial structure, wherein the epitaxial structure comprises: a first semiconductor layer; a current blocking layer on one side of the first semiconductor layer; a second semiconductor layer located on the current blocking layer and away from the first semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer have the same conductivity type; a dislocation barrier layer on the second semiconductor layer facing away from the first semiconductor layer; an active layer on the dislocation blocking layer facing away from the first semiconductor layer, wherein the active layer includes at least one repeating layer in a stack including a barrier layer and a well layer in a stack in a direction toward the active layer; a third semiconductor layer on the active layer facing away from the first semiconductor layer, the third semiconductor layer being of a different conductivity type than the first semiconductor layer.
According to the technical scheme provided by the invention, the dislocation density of the LED chip can be reduced by arranging the dislocation barrier layer, and the stress release function can be realized, so that the probability of warping in the epitaxial growth process of the LED chip is reduced. And the current blocking layer can realize better current blocking effect of the LED chip, so that the excellent performance of the LED chip is ensured.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an LED chip according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another LED chip according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of another LED chip according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of another LED chip according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of another LED chip according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of another LED chip according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As mentioned in the background, with the development of light emitting diode technology, the existing light emitting diodes are widely applied in the fields of electronics, optics, etc., and have a great deal of development in the aspects of illumination, display, and digital code. Moreover, as the application of LEDs (Light Emitting diodes) is gradually expanded, the market demand for LED performance is higher and higher.
Based on this, the embodiment of the invention provides an LED chip, which effectively solves the technical problems in the prior art and ensures that the LED chip has excellent performance.
To achieve the above object, the technical solutions provided by the embodiments of the present invention are described in detail below, specifically with reference to fig. 1 to 6.
Referring to fig. 1, a schematic structural diagram of an LED chip provided in an embodiment of the present invention is shown, where the LED chip includes an epitaxial structure, and the epitaxial structure includes:
the first semiconductor layer 110.
A current blocking layer 120 on one side of the first semiconductor layer 110.
A second semiconductor layer 130 on the current blocking layer 120 facing away from the first semiconductor layer 110, wherein the first semiconductor layer 110 and the second semiconductor layer 130 have the same conductivity type.
A dislocation barrier layer 140 on the second semiconductor layer 130 facing away from the first semiconductor layer 110.
An active layer 150 on the dislocation blocking layer 140 facing away from the first semiconductor layer 110, wherein the active layer 150 comprises at least one repeating layer comprising a barrier layer 151 and a well layer 152 stacked one on top of the other in a direction from the first semiconductor layer 110 toward the active layer 150.
A third semiconductor layer 160 on the active layer 150 facing away from the first semiconductor layer 110, the third semiconductor layer 160 having a different conductivity type from the first semiconductor layer 110.
In an embodiment of the invention, the first semiconductor layer and the second semiconductor layer provided in the invention may be N-type semiconductor layers, and the third semiconductor layer is a P-type semiconductor layer.
It can be understood that according to the technical scheme provided by the embodiment of the invention, the dislocation density of the LED chip can be reduced by arranging the dislocation blocking layer, and meanwhile, the stress release function can be realized, so that the probability of warping in the epitaxial growth process of the LED chip is reduced. And the current blocking layer can realize better current blocking effect of the LED chip, so that the excellent performance of the LED chip is ensured.
The invention can also optimize the epitaxial structure by arranging the functional layer, thereby further improving the performance of the LED chip. Specifically, as shown in fig. 2, a schematic structural diagram of another LED chip provided in the embodiment of the present invention is provided, wherein the epitaxial structure provided in the embodiment of the present invention further includes:
a tail barrier layer 170 between the active layer 150 and the third semiconductor layer 160.
And a low temperature layer 180 between the tail barrier layer 170 and the third semiconductor layer 160, wherein a growth process temperature of the low temperature layer 180 is lower than a growth process temperature of the tail barrier layer 170.
An electron blocking layer 190 between the low temperature layer 180 and the third semiconductor layer 160.
An ohmic contact layer 200 on a side of the third semiconductor layer 160 facing away from the first semiconductor layer 110.
In an embodiment of the invention, the materials of the first semiconductor layer, the current blocking layer, the second semiconductor layer, the dislocation blocking layer, the barrier layer, the potential well layer, the third semiconductor layer, the tail barrier layer, the low temperature layer, the electron blocking layer, and the ohmic contact layer provided in the invention all include an Al component.
The Al component of the tail barrier layer is larger than that of the dislocation barrier layer, the Al component of the dislocation barrier layer is larger than that of the electron barrier layer, the Al component of the electron barrier layer is larger than that of the current barrier layer, and the Al component of the current barrier layer is larger than that of the barrier layer.
And the Al composition of the barrier layer is greater than or equal to the Al compositions of the first semiconductor layer, the second semiconductor layer, the potential well layer, the low-temperature layer, the third semiconductor layer and the ohmic contact layer.
And the materials of the potential well layer and the ohmic contact layer provided by the embodiment of the invention also comprise an In component, wherein the In component of the potential well layer is more than or equal to that of the ohmic contact layer.
It can be understood that, in the embodiment of the present invention, by optimizing the size relationship of the Al components in the first semiconductor layer, the current blocking layer, the second semiconductor layer, the dislocation blocking layer, the barrier layer, the potential well layer, the third semiconductor layer, the tail barrier layer, the low temperature layer, the electron blocking layer, and the ohmic contact layer, that is, by designing the epitaxial structure to include Al components in each layer, the controllability of the growth of the epitaxial structure is realized, the purposes of stress release of the epitaxial structure and warpage reduction of the epitaxial growth are further realized, and the performance of the LED chip is further improved.
The LED chip provided by the embodiment of the invention can be a vertical LED chip. Fig. 3 is a schematic structural diagram of another LED chip according to an embodiment of the present invention, where the LED chip shown in fig. 3 includes an epitaxial structure in the LED chip shown in fig. 2. And, the LED chip provided in fig. 3 of the present invention includes: and a transparent conductive layer 210 located on a side of the first semiconductor layer 110 facing away from the current blocking layer 120.
A first electrode 221 located on a side of the transparent conductive layer back 210 away from the current blocking layer 120.
And, the LED chip includes: a metal reflective layer 230 on a side of the ohmic contact layer 200 facing away from the third semiconductor layer 160.
A bonding layer 240 on a side of the metal reflective layer 230 facing away from the third semiconductor layer 160.
A conductive substrate 250 on a side of the bonding layer 240 facing away from the third semiconductor layer 160.
A second electrode 222 on a side of the conductive substrate 250 facing away from the third semiconductor layer 160.
In an embodiment of the present invention, the material of the transparent conductive layer provided by the present invention may be ITO, and the material of the conductive substrate may be silicon, which is not particularly limited to the present invention and needs to be specifically selected according to practical applications.
On the basis of the epitaxial structure of the LED chip shown in FIG. 2, the invention can further optimize the epitaxial structure. As shown in fig. 4, which is a schematic structural diagram of another LED chip provided in an embodiment of the present invention, wherein, on the basis of the epitaxial structure of the LED chip shown in fig. 2, the epitaxial structure shown in fig. 4 of the present invention further includes: the auxiliary dislocation blocking layer 260 is located on the side, away from the current blocking layer 120, of the first semiconductor layer 110, and the dislocation density of the epitaxial structure is further reduced through the auxiliary dislocation blocking layer 260, so that the growth quality of the epitaxial structure is improved.
In an embodiment of the present invention, the materials of the auxiliary dislocation blocking layer, the first semiconductor layer, the current blocking layer, the second semiconductor layer, the dislocation blocking layer, the barrier layer, the potential well layer, the third semiconductor layer, the tail barrier layer, the low temperature layer, the electron blocking layer, and the ohmic contact layer all include an Al component.
The Al component of the tail barrier layer is larger than that of the auxiliary dislocation barrier layer, the Al component of the auxiliary dislocation barrier layer is larger than that of the dislocation barrier layer, the Al component of the dislocation barrier layer is larger than that of the electron barrier layer, the Al component of the electron barrier layer is larger than that of the current barrier layer, and the Al component of the current barrier layer is larger than that of the barrier layer.
And the Al composition of the barrier layer is greater than or equal to the Al compositions of the first semiconductor layer, the second semiconductor layer, the potential well layer, the low-temperature layer, the third semiconductor layer and the ohmic contact layer.
And the materials of the potential well layer and the ohmic contact layer provided by the embodiment of the invention also comprise an In component, wherein the In component of the potential well layer is more than or equal to that of the ohmic contact layer. The thicknesses of the first semiconductor layer and the second semiconductor layer provided by the embodiment of the invention are greater than the thicknesses of the auxiliary dislocation barrier layer and the dislocation barrier layer; the thicknesses of the first semiconductor layer and the second semiconductor layer provided by the embodiment of the invention can be in a micron order, wherein the thicknesses of the first semiconductor layer and the second semiconductor layer can be greater than or equal to 1 micron; and the thicknesses of the auxiliary dislocation blocking layer and the dislocation blocking layer may be in the nanometer range, wherein the thicknesses of the auxiliary dislocation blocking layer and the dislocation blocking layer may be less than or equal to 100 nm, and the specific thickness values are not limited in the embodiments of the present invention.
Further as shown in fig. 5, which is a schematic structural diagram of another LED chip provided in the embodiment of the present invention, wherein on the basis of the epitaxial structure of the LED chip shown in fig. 4, the epitaxial structure shown in fig. 5 of the present invention further includes: an undoped layer 270 on a side of the auxiliary dislocation blocking layer 260 facing away from the first semiconductor layer 110. And the buffer layer 280 is positioned on the side of the non-doped layer 270 away from the first semiconductor layer 110, so that the crystal growth quality of the epitaxial structure is improved through the growth of the buffer layer 280 and the non-doped layer 270.
The LED chip provided by the embodiment of the invention can be a flip-chip LED chip. Fig. 6 is a schematic structural diagram of another LED chip according to an embodiment of the present invention, where the LED chip shown in fig. 6 may include an epitaxial structure in the LED chip shown in fig. 5. And, the LED chip provided in fig. 6 of the present invention includes: a metal reflective layer 290 on a side of the ohmic contact layer 200 facing away from the third semiconductor layer 160.
The dielectric layer 300 is located on a side of the metal layer reflection layer 290 away from the third semiconductor layer 160, where, on the side of the dielectric layer 300, the LED chip includes at least one first through hole and at least one second through hole, the first through hole exposes the first semiconductor layer 110, the second through hole exposes the metal reflection layer 290, and the dielectric layer 300 covers a surface of the metal reflection layer 290 and extends to cover a sidewall of the first through hole.
A first electrode 311 in contact with the first semiconductor layer 110 through the first via hole, and a second electrode 312 in contact with the metal reflective layer 290 through the second via hole; wherein the first electrode 311 and the second electrode 312 may be separated by a dielectric layer 300.
And, the LED chip includes: an epitaxial substrate 320 on a side of the epitaxial structure facing away from the first electrode 311.
In an embodiment of the present invention, the material of the metal reflective layer provided by the present inventionThe substance may be gold or silver, or other materials. The epitaxial substrate provided by the embodiment of the invention can be Al2O3Or other materials. As shown in fig. 6, the material of the dielectric layer 300 provided in the embodiment of the present invention may be SiN, which is not limited in the present invention.
In any of the above embodiments of the present invention, the LED chip provided by the present invention may be a UV (ultraviolet) -LED chip. The buffer layer provided by the embodiment of the invention can be made of AlGaN; the material of the undoped layer can be AlGaN; the auxiliary dislocation barrier layer can be made of AlGaN; the first semiconductor layer may be made of AlGaN; the current blocking layer can be made of AlGaN; the second semiconductor layer can be made of AlGaN; the dislocation barrier layer can be made of AlGaN; the barrier layer can be made of AlGaN; the material of the well layer can be AlGaN or AlInGaN; the tail barrier layer can be made of AlGaN; the low-temperature layer can be made of AlGaN; the electron blocking layer can be made of AlGaN; the third semiconductor layer may be made of AlGaN; the material of the ohmic contact layer may be AlGaN or AlInGaN, and the present invention is not limited in particular.
The embodiment of the invention provides an LED chip, which comprises an epitaxial structure, wherein the epitaxial structure comprises: a first semiconductor layer; a current blocking layer on one side of the first semiconductor layer; a second semiconductor layer located on the current blocking layer and away from the first semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer have the same conductivity type; a dislocation barrier layer on the second semiconductor layer facing away from the first semiconductor layer; an active layer on the dislocation blocking layer facing away from the first semiconductor layer, wherein the active layer includes at least one repeating layer in a stack including a barrier layer and a well layer in a stack in a direction toward the active layer; a third semiconductor layer on the active layer facing away from the first semiconductor layer, the third semiconductor layer being of a different conductivity type than the first semiconductor layer.
According to the technical scheme provided by the embodiment of the invention, the dislocation density of the LED chip can be reduced by arranging the dislocation barrier layer, and the stress release function can be realized, so that the probability of warping in the epitaxial growth process of the LED chip is reduced. And the current blocking layer can realize better current blocking effect of the LED chip, so that the excellent performance of the LED chip is ensured.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. An LED chip comprising an epitaxial structure, the epitaxial structure comprising:
a first semiconductor layer;
a current blocking layer on one side of the first semiconductor layer;
a second semiconductor layer located on the current blocking layer and away from the first semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer have the same conductivity type;
a dislocation barrier layer on the second semiconductor layer facing away from the first semiconductor layer;
an active layer on the dislocation blocking layer facing away from the first semiconductor layer, wherein the active layer includes at least one repeating layer in a stack including a barrier layer and a well layer in a stack in a direction toward the active layer;
a third semiconductor layer on the active layer facing away from the first semiconductor layer, the third semiconductor layer being of a different conductivity type than the first semiconductor layer.
2. The LED chip of claim 1, wherein said epitaxial structure further comprises:
a tail barrier layer between the active layer and the third semiconductor layer;
a low temperature layer between the tail barrier layer and the third semiconductor layer;
an electron blocking layer between the low temperature layer and the third semiconductor layer;
and the ohmic contact layer is positioned on one side of the third semiconductor layer, which is far away from the first semiconductor layer.
3. The LED chip of claim 2, wherein the first semiconductor layer, the current blocking layer, the second semiconductor layer, the dislocation blocking layer, the barrier layer, the well layer, the third semiconductor layer, the tail barrier layer, the low temperature layer, the electron blocking layer, and the ohmic contact layer are each comprised of an Al component;
wherein the Al component of the tail barrier layer is greater than the Al component of the dislocation barrier layer, the Al component of the dislocation barrier layer is greater than the Al component of the electron barrier layer, the Al component of the electron barrier layer is greater than the Al component of the current barrier layer, and the Al component of the current barrier layer is greater than the Al component of the barrier layer;
and the Al composition of the barrier layer is greater than or equal to the Al compositions of the first semiconductor layer, the second semiconductor layer, the potential well layer, the low-temperature layer, the third semiconductor layer and the ohmic contact layer.
4. The LED chip of claim 2, wherein said epitaxial structure further comprises: and the auxiliary dislocation barrier layer is positioned on one side of the first semiconductor layer, which faces away from the current barrier layer.
5. The LED chip of claim 4, wherein said auxiliary dislocation barrier layer, said first semiconductor layer, said current blocking layer, said second semiconductor layer, said dislocation barrier layer, said well layer, said third semiconductor layer, said tail barrier layer, said low temperature layer, said electron blocking layer, and said ohmic contact layer are all comprised of an Al composition;
wherein the Al component of the tail barrier layer is greater than the Al component of the auxiliary dislocation barrier layer, the Al component of the auxiliary dislocation barrier layer is greater than the Al component of the dislocation barrier layer, the Al component of the dislocation barrier layer is greater than the Al component of the electron barrier layer, the Al component of the electron barrier layer is greater than the Al component of the current barrier layer, and the Al component of the current barrier layer is greater than the Al component of the barrier layer;
and the Al composition of the barrier layer is greater than or equal to the Al compositions of the first semiconductor layer, the second semiconductor layer, the potential well layer, the low-temperature layer, the third semiconductor layer and the ohmic contact layer.
6. The LED chip of claim 4, wherein said epitaxial structure further comprises: the undoped layer is positioned on one side, away from the first semiconductor layer, of the auxiliary dislocation blocking layer;
and the buffer layer is positioned on one side of the undoped layer, which is far away from the first semiconductor layer.
7. The LED chip of claim 4, wherein the thicknesses of said first and second semiconductor layers are greater than the thicknesses of said auxiliary dislocation barrier layer and said dislocation barrier layer.
8. The LED chip of any of claims 2 to 7, wherein the materials of said well layer and said ohmic contact layer further comprise an In component, wherein the In component of said well layer is greater than or equal to the In component of the ohmic contact layer.
9. The LED chip of claim 2, wherein said LED chip comprises: the transparent conducting layer is positioned on one side, away from the current blocking layer, of the first semiconductor layer;
the first electrode is positioned on one side, away from the current blocking layer, of the transparent conducting layer;
and, the LED chip includes: the metal reflecting layer is positioned on one side, away from the third semiconductor layer, of the ohmic contact layer;
the bonding layer is positioned on one side, away from the third semiconductor layer, of the metal reflecting layer;
the conductive substrate is positioned on one side, away from the third semiconductor layer, of the bonding layer;
and the second electrode is positioned on one side of the conductive substrate, which faces away from the third semiconductor layer.
10. The LED chip of claim 4 or 6, wherein said LED chip comprises: the metal reflecting layer is positioned on one side, away from the third semiconductor layer, of the ohmic contact layer;
the dielectric layer is positioned on one side, away from the third semiconductor layer, of the metal layer reflection layer, wherein the LED chip comprises at least one first through hole and at least one second through hole on one side of the dielectric layer, the first through hole exposes the first semiconductor layer, the second through hole exposes the metal reflection layer, and the dielectric layer covers the side wall of the first through hole;
a first electrode in contact with the first semiconductor layer through the first via hole, and a second electrode in contact with the metal reflective layer through the second via hole;
and, the LED chip includes: and the epitaxial substrate is positioned on one side of the epitaxial structure, which is far away from the first electrode.
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