CN1133493A - Silicon semiconductor bridge rectifier with base plate structure - Google Patents
Silicon semiconductor bridge rectifier with base plate structure Download PDFInfo
- Publication number
- CN1133493A CN1133493A CN 95103191 CN95103191A CN1133493A CN 1133493 A CN1133493 A CN 1133493A CN 95103191 CN95103191 CN 95103191 CN 95103191 A CN95103191 A CN 95103191A CN 1133493 A CN1133493 A CN 1133493A
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- China
- Prior art keywords
- substrate
- terminal
- diode
- bridge rectifier
- silicon semiconductor
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000004065 semiconductor Substances 0.000 title claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 14
- 229910052710 silicon Inorganic materials 0.000 title claims description 14
- 239000010703 silicon Substances 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 239000003365 glass fiber Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 6
- 238000001746 injection moulding Methods 0.000 abstract description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 2
- 210000001161 mammalian embryo Anatomy 0.000 abstract 2
- 239000011810 insulating material Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 11
- 238000005538 encapsulation Methods 0.000 description 11
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 239000000047 product Substances 0.000 description 7
- 238000003466 welding Methods 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000011265 semifinished product Substances 0.000 description 5
- 238000005476 soldering Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- UQMRAFJOBWOFNS-UHFFFAOYSA-N butyl 2-(2,4-dichlorophenoxy)acetate Chemical compound CCCCOC(=O)COC1=CC=C(Cl)C=C1Cl UQMRAFJOBWOFNS-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000011017 operating method Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 238000012958 reprocessing Methods 0.000 description 2
- 238000007873 sieving Methods 0.000 description 2
- 210000000080 chela (arthropods) Anatomy 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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Abstract
A rectifier bridge is composed of substrate, commutation diode, terminal and casing. Said substrate is a base plate made of heatproof insulating material, and firstly a conductive component is mounted on the base plate, then the conductive component and the commutation diode are combined together according to the bridge circuit, and finally, in the packaging procedure, the base plate and single side mould are formed into cavity chamber by means of injection moulding process, and at the sametime, those four terminals also are enclosed-separated into the portions of embryo interior and embryo exterior by base plate, and the base plate is prepared in the form of connecting component. It can raise working efficiency and reduce cost.
Description
The present invention relates to a kind of semiconductor device, relate to a kind of silicon semiconductor bridge rectifier or rather.
The silicon semiconductor bridge rectifier of big electric current (as more than 50 amperes) level, usually adopt and four rectifier diodes are installed and on radiator to be electrically connected into the version of bridge circuit, and the rectifier below 50 amperes generally directly produces the commercial size product by factory, wherein the volume of production and marketing with 1 ampere of level rectifier bridge is a maximum, and this rectifier bridge roughly comprises three types:
1 is the SIP type of single in-line packages.
2 is the round shell encapsulation WO type of radially terminal, because radial lead can increase the carrying density of soldering furnace, thereby reduced the welding cost of lead and diode, but its semi-finished product are in mold injection idiosome operation, radial lead has caused the difficulty of mold design and production operation, thereby factory all adopts RTV rubber opening mould for many years, promptly injects the liquid resin encapsulation, or use prefabricated shell cup, with the embedding of shell cup.Because these two kinds of methods all adopt liquid resin, contaminated environment but also can not enhance productivity not only, substandard products are also more.In addition, if use silver-jacketed wire, though can avoid the cylinder electroplating process of finished product, increased material cost, if use the naked copper wire rod, it is zinc-plated then also need to make cylinder, will cause the lead bending, also needs artificial alignment etc.
3 is the DIP type of dual in-line package, and conductive member adopts lead frame form and diode to weld through meltback process in soldering furnace, makes idiosome through mold injection again, but the lead frame in this method needs accurate the making.Employed soldering furnace in each operation, injection mold, lead frame are cut muscle cutter, curved machine etc. and are also all needed accurate the making, and it is many to consume goods, materials and equipments, though can produce the product of high-quality, cost is too high, is equivalent to 1.5 times of WO method.
The objective of the invention is to solve that silicon semiconductor bridge rectifier in the past is big because of the equipment investment that encapsulation technology causes, the problem of production cost height, production process complexity and end product quality difference, and design a kind of silicon semiconductor bridge rectifier with board structure, to improve the encapsulation technology of semiconductor bridge rectifier.
Silicon semiconductor bridge rectifier of the present invention by substrate, be installed in on-chip terminal, be installed in the diode chip for backlight unit between terminal and be encapsulated in diode chip for backlight unit and on-chip shell is formed, is characterized in that:
Described substrate is to be cut out to divide by the pre-dissected valley on the substrate by a heatproof insulated substrate that links the bodily form to form, and described terminal is to run through on-chip installing hole or run through the conductive member that is positioned at substrate both sides mounting groove.
Described heatproof insulated substrate is the glass fiber resin plate.
Described conductive member is lead or lead frame, the folder that lead one end form to be installed diode at the substrate installing hole one lateral buckling space of pulling, and the lead other end becomes line style; Lead frame one end is provided with two short slots for the clamp diode in substrate mounting groove one side, and the lead frame other end becomes plug-in unit pin type, and the lead frame stage casing is in the rectangular channel of substrate both sides mounting groove for clamping.
Described diode chip for backlight unit is the diode that has the electrode wafer shape diode of book jacket dress or have the axial lead terminal.
Described terminal distributes in proper order by anode, negative terminal, interchange end, interchange end or distributes by anode, interchange end, negative terminal, interchange end.
The present invention passes through mounting terminal on substrate, and between terminal and terminal diode is installed, and makes terminal and diode form bridge circuit and is connected, again package casing between circuit member and substrate.Because substrate is a kind of substrate that becomes continuous part structure, stamps out the installing hole of penetrating terminal or mounting groove and for tailoring into single substrate making the pre-dissected valley of discrete component, thereby improved encapsulation technology.
Further specify technology of the present invention below in conjunction with embodiment and accompanying drawing
The board structure schematic diagram of first kind of embodiment of Fig. 1
The package assembly schematic diagram of first kind of embodiment substrate of Fig. 2 and conductor terminal
First kind of embodiment diode of Fig. 3 mounting structure schematic diagram
First kind of embodiment mold injection of Fig. 4 green structure schematic diagram
First kind of embodiment silicon semiconductor bridge rectifier of Fig. 5 contour structures schematic diagram
Second kind of embodiment board structure of Fig. 6 schematic diagram
Second kind of embodiment lead frame of Fig. 7 terminal structure schematic diagram
Second kind of embodiment substrate of Fig. 8 and lead frame terminal group assembling structure schematic diagram
Second kind of embodiment diode of Fig. 9 mounting structure schematic diagram
Second kind of embodiment mold injection of Figure 10 green structure schematic diagram
Second kind of embodiment semiconductor bridge rectifier of Figure 11 contour structures schematic diagram
Fig. 1 to Fig. 4 illustrates and makes the operating procedure of semiconductor bridge rectifier as shown in Figure 5, and Fig. 6 extremely
Figure 10 illustrates and makes the operating procedure of semiconductor bridge rectifier as shown in figure 11, and step mainly is included in mounting terminal on the substrate, diode is installed between terminal and terminal, terminal forms bridge circuit with diode and is connected, again package casing on circuit member and substrate.
First kind of embodiment with lead-type terminal, its encapsulation step is as follows:
1, the glass fiber resin plate is made substrate 10 with continuous part version, and make the terminal installing hole and through substrate about in the of 10 in substrate 10 upper punches, on substrate 10, reserve pre-dissected valley 12 again, so that substrate 10 sanctions are divided into discrete component, as shown in Figure 1;
2, copper cash terminal 20,21a are inserted in the installing hole of substrate 10 with tail end 21,22,21a, the 22a of its opening part, and bend tail end 21,22,21a, 22a, make formation one press from both sides the space 201 of pulling, as shown in Figure 2;
3,4 electrode wafer shape diodes 30 are inserted folder and pull in the space 201, and each diode 30 is clamped between two groups of conductor terminals, as shown in Figure 3;
4, clamping there is the conductor terminal of diode 30 eject and downwards, connect technology with general tin wave soldering, with tail end 21,22,21a, the 22a bending place welding of diode 30 with conductor terminal 20,20a, as shown in Figure 3, in the tin liquor of only the heating welding portion need being submerged during welding, undermine substrate 10 to avoid high temperature, the high-load lead base scolding tin that this selective local is heated and can be used 300 ℃ of fusing points, meet the SMD performance requirement, the suffered temperature of FRP substrate can not surpass its limiting value in the welding;
5, substrate 10 is close in the conductor terminal passing that will be welded with diode 30, do the mold injection encapsulation of shell 40, because semi-finished product are a plurality of continuous parts, the idiosome shell 40 of its plastic mould can be formed on the face of substrate 10, finish the encapsulation of rectifier bridge, as shown in Figure 4;
6, the semi-finished product finished of injection moulding still keep the connecting piece state, need carry out follow-up reprocessing, comprise excision terminal 20, 20a link bar 23,23a, terminal 20,20a wicking, electrical, sieving and grading, franking, substrate are cut off bulk-breaking, packing etc.Make finished product as shown in Figure 5 at last.
Second kind of embodiment with lead frame type terminal, its encapsulation step is as follows:
1, the glass fiber resin plate is made the substrate 50 with continuous part version, and gone out terminal mounting groove 51 in substrate 50 both sides punching out, cutting goes out pre-dissected valley 52 on substrate 50 again, so that substrate 50 sanctions are divided into discrete component, as shown in Figure 6;
2, get the lead frame terminal 60 that is prepared into the link piece structure form, as shown in Figure 7, in the mounting groove 51 that the punching out of substrate both sides goes out, make short slot 62 on the whole lead frame terminal 60 form the layout that to interlock clamp lead-type diode, as shown in Figure 8 with rectangular channel 61 clampings of its terminal middle section;
3, lead shape diode 70 clamps in the short slot 62 on the two relative lead frame terminals, are constituted diode and are connected with the binding and the formation bridge circuit of lead frame terminal, as shown in Figure 9 on substrate;
4, the substrate 50 that clamp is had diode 70, with general tin wave soldering connection welding diode 70 and lead frame terminal short slot 62, can only the part that needs to weld be immersed in the tin liquor, avoid high temperature to undermine substrate 50, this selective local is heated, can use the high-load lead base scolding tin of 300 ℃ of fusing points, meet the SMD requirement, the suffered temperature of FRP substrate can not surpass its limiting value in the welding;
5, carry out the plastic packaging of shell 80, because semi-finished product are continuous parts, the idiosome shell 80 of its injection mold can be formed on the one side of substrate 50, with encapsulation rectifier bridge part, as shown in figure 10;
6, the semi-finished product finished of injection moulding still keep the connecting piece state, need carry out follow-up reprocessing, as excision terminal link bar 63, terminal 60 wickings, electrical, sieving and grading, franking, substrate are cut off bulk-breaking.Packings etc. are made finished product as shown in figure 11 at last.
Embodiment aforesaid operations step can make the structure of mould simplify significantly, the pincers envelope problem that does not have the metal terminal inserts, can prolong the useful life of mould, but make this have the silicon semiconductor bridge rectifier high efficiency of board structure, enforcement cheaply, the idiosome shell made from mold injection has the quality better than classical production process.Being connected and forming four electrical terminals outside idiosome of four rectifier diodes and electric-conductor, four terminals can have two kinds of layouts, first kind of layout be in regular turn by ten, one, AC, AC arrange, second kind of layout be in regular turn by ten, AC,, AC arrange.Terminal can adopt lead-type, plug-in unit pin type by the use pattern, or surface adhering solder type (SMD).Diode can be used general industrial specification product, comprises the diode chip for backlight unit of diode, small-size shaft guiding line terminal type diode or other band book jackets of the encapsulation of electrode wafer shape.
Claims (5)
1, a kind of silicon semiconductor bridge rectifier with board structure by substrate, be installed in on-chip terminal, be installed in the diode chip for backlight unit between terminal and be encapsulated in diode chip for backlight unit and on-chip shell is formed, is characterized in that:
Described substrate is to be cut out to divide by the pre-dissected valley on the substrate by a heatproof insulated substrate that links the bodily form to form, and described terminal is to run through on-chip installing hole or run through the conductive member that is positioned at substrate both sides mounting groove.
2, the silicon semiconductor bridge rectifier with board structure according to claim 1 is characterized in that: described heatproof insulated substrate is the glass fiber resin plate.
3, the silicon semiconductor bridge rectifier with board structure according to claim 1, it is characterized in that: described conductive member is lead or lead frame, the folder that lead one end form to be installed diode at the substrate installing hole one lateral buckling space of pulling, the lead other end becomes line style; Lead frame one end is provided with two short slots for the clamp diode in substrate mounting groove one side, and the lead frame other end becomes plug-in unit pin type, and the lead frame stage casing is in the rectangular channel of substrate both sides mounting groove for clamping.
4, the silicon semiconductor bridge rectifier with board structure according to claim 1 is characterized in that: described diode chip for backlight unit is the diode that has the electrode wafer shape diode of book jacket dress or have the axial lead terminal.
5, the silicon semiconductor bridge rectifier with board structure according to claim 1 is characterized in that: described terminal distributes in proper order by anode, negative terminal, interchange end, interchange end or distributes by anode, interchange end, negative terminal, interchange end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN95103191A CN1037387C (en) | 1995-04-10 | 1995-04-10 | Silicon semiconductor bridge rectifier with base plate structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN95103191A CN1037387C (en) | 1995-04-10 | 1995-04-10 | Silicon semiconductor bridge rectifier with base plate structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1133493A true CN1133493A (en) | 1996-10-16 |
| CN1037387C CN1037387C (en) | 1998-02-11 |
Family
ID=5074636
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN95103191A Expired - Fee Related CN1037387C (en) | 1995-04-10 | 1995-04-10 | Silicon semiconductor bridge rectifier with base plate structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1037387C (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1043829A (en) * | 1989-12-29 | 1990-07-11 | 谭金发 | High voltage withstanding fet power crystalline solids assembly |
-
1995
- 1995-04-10 CN CN95103191A patent/CN1037387C/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| CN1037387C (en) | 1998-02-11 |
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Free format text: CORRECT: PATENTEE; FROM: DAI CHAOZHI TO: ZHIWEI SCIENCE AND TECHNOLOGY CO., LTD. |
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| CP03 | Change of name, title or address |
Address after: No. 16, Lane 2, Lane 235, Lane 8, Baoshan Road, Taiwan, Taipei Patentee after: Zhiwei Technology Holding Co., Ltd. Address before: No. 133, No. 14, Section 1, North Road, new store, Taiwan, Taipei Patentee before: Dai Chaozhi |
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