CN113341560B - Curved surface special-shaped MEMS two-dimensional scanning micro-mirror and preparation method thereof - Google Patents
Curved surface special-shaped MEMS two-dimensional scanning micro-mirror and preparation method thereof Download PDFInfo
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- CN113341560B CN113341560B CN202110561169.4A CN202110561169A CN113341560B CN 113341560 B CN113341560 B CN 113341560B CN 202110561169 A CN202110561169 A CN 202110561169A CN 113341560 B CN113341560 B CN 113341560B
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- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
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- G02B26/101—Scanning systems with both horizontal and vertical deflecting means, e.g. raster or XY scanners
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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Abstract
The invention provides a curved surface special-shaped MEMS two-dimensional scanning micro-mirror, which comprises an outer frame, an inner frame, a coil, a curved surface mirror surface, a fast axis and a slow axis, wherein the curved surface mirror surface is positioned at the center of an integral structure and is connected with the inner frame through the fast axis, and the inner frame is connected with the outer frame through the slow axis, wherein: the curved mirror surface adopts a spherical crown surface which is a curved surface left after a spherical surface is cut by a plane; the coils are arranged in an internal mode, an external permanent magnet provides a magnetic field forming an angle of 45 degrees with the micro-mirror, and the torsion of the torsion arm beams of the fast axis and the slow axis is controlled through the Lorentz force in the Z direction, so that the scanning of the slow axis and the fast axis, namely the Y axis and the X axis is realized; the curved surface special-shaped two-dimensional scanning micro-mirror realizes periodic and high-frequency swing at X, Y axis under the control of electromagnetic force. The invention adopts a curved surface special-shaped structure, and uses a curved surface mirror to replace a plane mirror, thereby greatly increasing the scanning view field of the MEMS two-dimensional scanning micro-mirror and increasing the scanning angle of the laser radar.
Description
Technical Field
The invention relates to a micro electro mechanical system technology, in particular to a curved surface special-shaped MEMS two-dimensional scanning micro-mirror and a preparation method thereof.
Background
The MEMS micro-mirror refers to an optical MEMS device manufactured by using an optical MEMS technology, and integrating a micro-mirror with a MEMS driver. Compared with the traditional scanning mirror, the MEMS two-dimensional scanning micro-mirror is used as a core component of a new generation of three-dimensional imaging laser radar, has the advantages of small size, low cost, high scanning frequency, high response speed, low power consumption and the like, and is widely applied to the fields of optical communication, scanning imaging, laser radar and the like.
The reflecting mirror surface of the traditional MEMS two-dimensional scanning micro-mirror adopts a plane mirror and is limited by the limitations of rigidity limit, reliability and the like of a rotating beam of the MEMS scanning micro-mirror, the scanning angle of the MEMS scanning micro-mirror is smaller than that of a turntable type laser radar, and the application of a new generation of three-dimensional imaging laser radar is greatly limited.
Disclosure of Invention
The invention aims to provide a curved surface special-shaped MEMS two-dimensional scanning micro-mirror and a preparation method thereof.
The technical solution for realizing the purpose of the invention is as follows: the utility model provides a curved surface dysmorphism MEMS two-dimensional scanning micro mirror, includes frame, inside casing, coil, curved surface mirror surface, fast axle and slow axle, and the curved surface mirror surface is located overall structure's center, is connected with the inside casing through fast axle, and the inside casing is connected with the frame through slow axle, wherein:
the curved mirror surface adopts a spherical crown surface which is a curved surface left after a spherical surface is cut by a plane and can also be regarded as a surface obtained by rotating a circle around the diameter of a circle of one end point of the spherical surface; the coil adopts an internal mode, an external permanent magnet provides a magnetic field forming an angle of 45 degrees with the micro-mirror, and the torsion of the torsion arm beams of the fast axis and the slow axis is controlled through the Lorentz force in the Z direction, so that the scanning of the X axis (slow axis) and the scanning of the Y axis (fast axis) are realized; the curved surface special-shaped two-dimensional scanning micro-mirror realizes periodic and high-frequency swing at X, Y axis under the control of electromagnetic force.
Furthermore, a micro angle sensor is integrated on the fast axis and the slow axis and used for feeding back the torsion information of the fast axis and the slow axis in real time and providing signals for further feedback control of the rear end so as to further enhance the rotation linearity of the micromirror.
Furthermore, the micro angle sensor is formed by depositing a piezoelectric film in a Wheatstone bridge by adopting a magnetron sputtering technology, when the beam is twisted, pressure is generated, the resistance value of the piezoelectric film is changed, and signals are amplified and read through the bridge.
The utility model provides a curved surface dysmorphism two-dimensional MEMS micro-mirror's manufacturing method, adopts 6 inches MEMS technology, compares 4 inches technology, and the former has higher efficiency, is favorable to promoting micro-mirror batch preparation level, and the preparation flow is as follows:
step 1, pretreating a 6-inch SOI wafer, firstly, carrying out standard RCA cleaning on the wafer, washing with deionized water, and drying with nitrogen;
step 2, performing MA6/BA6 contact photoetching on the top silicon of the wafer, and selecting a photoresist AZ5214 with the thickness of 1.5 mu m; after development, a magnetron sputtering technology is adopted to deposit a metal film with the line width of 2 mu m and the thickness of 400nm on an etching area of the top layer silicon; removing the photoresist by adopting a lift-off process to form a built-in coil;
step 3, performing MA6/BA6 contact type photoetching on the top silicon of the wafer, and selecting a photoresist AZ4620 with the thickness of 8 mu m; after the development, carrying out high-verticality deep silicon etching on the top silicon by an ICP deep silicon etching machine and a BOSCH process until the oxide layer is stopped;
step 4, performing MA6/BA6 contact type photoetching on the central area of the top layer silicon, and selecting a photoresist AZ5214, wherein the thickness of the photoresist is 1.5 mu m; after development, adopting a magnetron sputtering technology to deposit a reflective metal film on the central area of the top layer silicon, wherein the thickness of the deposited film is 250 nm; after the process is finished, a silicon dioxide layer with the thickness of 500nm is deposited by adopting PECVD and is used as a protective layer;
step 5, carrying out photoetching on the back substrate of the wafer, carrying out deep silicon etching by adopting MA6/BA6 contact photoetching and taking silicon dioxide as a mask, and stopping etching when etching to the buried oxide layer;
step 6, placing the wafer in a BOE solution to remove the silicon dioxide layer and release the structure;
and 7, processing the fine structure of the wafer by using a plurality of beams of laser to form a curved surface mirror surface with a specific curvature, and then leading out a signal to the substrate through a 30-micron Au wire to complete the packaging of the curved surface special-shaped MEMS two-dimensional scanning micro-mirror for testing.
Compared with the prior art, the invention has the remarkable advantages that: 1) the reflecting mirror surface with a curved surface special-shaped structure is adopted, the scanning space characteristic is changed, and the scanning angle of the micromirror is greatly increased; 2) by adopting the 3D MEMS processing technology, on the basis of the traditional planar MEMS processing technology, the laser precision etching technology is introduced, the precision etching of curvature is realized, and the processing precision is greatly improved.
Drawings
FIG. 1 is a structural diagram of a curved surface special-shaped MEMS two-dimensional scanning micro-mirror of the present invention.
FIG. 2 is a flow chart of the process for manufacturing the curved surface special-shaped MEMS two-dimensional scanning micro-mirror.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
As shown in fig. 1, a curved surface dysmorphism MEMS two-dimensional scanning micro-mirror, including frame, inside casing, coil, curved surface mirror surface, fast axle and slow axle, the curved surface mirror surface is located overall structure's center, is connected with the inside casing through fast axle, and the inside casing is connected with the frame through slow axle, wherein: the curved mirror surface adopts a spherical crown surface which is a curved surface left after a spherical surface is cut by a plane and can also be regarded as a surface obtained by rotating a circle around the diameter of a circle of one end point of the spherical surface; the coils are arranged in an internal mode, an external permanent magnet provides a magnetic field forming an angle of 45 degrees with the micro-mirror, and the torsion of the torsion arm beams of the fast axis and the slow axis is controlled through the Lorentz force in the Z direction, so that the scanning of the X axis (slow axis) and the scanning of the Y axis (fast axis) are realized; the curved surface special-shaped two-dimensional scanning micro-mirror realizes periodic and high-frequency swing at X, Y axis under the control of electromagnetic force.
And the micro angle sensors are integrated on the fast axis and the slow axis and used for feeding back the torsion information of the fast axis and the slow axis in real time and providing signals for further feedback control at the rear end so as to further enhance the rotation linearity of the micromirror. In a preferred embodiment, the micro angle sensor is formed by depositing a piezoelectric film by magnetron sputtering technology, and placing the piezoelectric film in a wheatstone bridge, wherein when the beam is twisted, pressure is generated, the resistance value of the piezoelectric film changes, and the signal is amplified and read by the bridge.
Based on the structure, the invention also provides a manufacturing method of the curved surface special-shaped two-dimensional MEMS micro-mirror, which is prepared by adopting a 6-inch MEMS process technology, and compared with a 4-inch process technology, the method has higher efficiency and is beneficial to improving the batch preparation level of the micro-mirror. As shown in fig. 2, the preparation process is as follows:
step 1, preprocessing a 6-inch SOI wafer;
firstly, carrying out standard RCA cleaning on a 6-inch SOI wafer, removing organic contamination on the surface of the silicon wafer, dissolving an oxide film, removing contamination such as particles and metal, passivating the surface of the silicon wafer, washing the wafer by deionized water, and drying by nitrogen;
step 2, depositing a built-in coil of the micromirror;
carrying out MA6/BA6 contact photoetching on top silicon of the wafer, and selecting a photoresist AZ5214 with the thickness of 1.5 mu m; after development, a magnetron sputtering technology is adopted to deposit a metal film with the line width of 2 mu m and the thickness of 400nm on an etching area of the top layer silicon; finally, removing the photoresist by adopting a lift-off process to form a built-in coil;
step 3, performing high-verticality deep silicon etching on the top silicon;
carrying out MA6/BA6 contact photoetching on the top layer silicon, and using a photoresist AZ4620, wherein the thickness of the photoresist is 8 mu m; after development, etching the top silicon in the vertical direction by adopting a fluorine-based active group through an ICP deep silicon etching machine and a BOSCH process, then performing side wall passivation, alternately performing etching and protecting processes, and etching until an oxide layer is stopped to realize high-verticality deep silicon etching on the top silicon;
step 4, depositing a reflective metal film, and depositing a layer of silicon dioxide on the surface as a protective layer;
for the contact type photoetching of the central area MA6/BA6 of the top layer silicon, selecting a photoresist AZ5214, wherein the thickness of the photoresist is 1.5 mu m; after development, adopting a magnetron sputtering technology to deposit a reflective metal film on the central area of the top layer silicon, wherein the thickness of the metal film is 250 nm; after the process is finished, a silicon dioxide layer with the thickness of 500nm is deposited by adopting a PECVD method to be used as a protective layer;
step 5, photoetching is carried out on the back substrate;
carrying out MA6/BA6 contact photoetching on a back substrate of the wafer, taking silicon dioxide as a mask, carrying out deep silicon etching, and etching until the buried oxide layer is stopped;
step 6, releasing the structure;
placing the SOI wafer in a BOE solution to remove the silicon dioxide layer and release the structure;
step 7, processing a reflector with a specific curvature;
the wafer is subjected to microstructure processing by using a plurality of beams of laser to form a curved surface mirror surface with a specific curvature, and then a signal is led out to the substrate through a 30-micron Au wire to complete the packaging of the curved surface special-shaped MEMS two-dimensional scanning micro-mirror for testing.
In conclusion, the invention adopts a curved surface special-shaped structure, and uses a curved surface mirror to replace a plane mirror, thereby greatly increasing the scanning view field of the MEMS two-dimensional scanning micro-mirror and increasing the scanning angle of the laser radar.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is specific and detailed, but not to be understood as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent application shall be subject to the appended claims.
Claims (1)
1. A preparation method of a curved surface special-shaped MEMS two-dimensional scanning micro-mirror is characterized in that a 6-inch MEMS process technology is adopted to prepare the curved surface special-shaped MEMS two-dimensional scanning micro-mirror, wherein:
curved surface dysmorphism MEMS two-dimensional scanning micro-mirror includes frame, inside casing, coil, curved surface mirror surface, fast axle and slow axle, and the curved surface mirror surface is located overall structure's center, is connected with the inside casing through fast axle, and the inside casing is connected with the frame through slow axle, wherein:
the curved mirror surface adopts a spherical crown surface which is a curved surface left after a spherical surface is cut by a plane; the coils are arranged in an internal mode, an external permanent magnet provides a magnetic field forming an angle of 45 degrees with the micro-mirror, and the torsion of the torsion arm beams of the fast axis and the slow axis is controlled through the Lorentz force in the Z direction, so that the scanning of the slow axis and the fast axis, namely the Y axis and the X axis is realized; the curved surface special-shaped MEMS two-dimensional scanning micro-mirror realizes periodic and high-frequency swing at an X, Y axis under the control of electromagnetic force;
a micro angle sensor is integrated on the fast axis and the slow axis and used for feeding back the torsion information of the fast axis and the slow axis in real time and providing signals for further feedback control of the rear end so as to further enhance the rotation linearity of the micro mirror;
the micro angle sensor is formed by depositing a layer of piezoelectric film in a Wheatstone bridge by adopting a magnetron sputtering technology, when a beam is twisted, pressure is generated, the resistance value of the piezoelectric film is changed, and signals are amplified and read through the bridge;
the preparation process of the curved surface special-shaped MEMS two-dimensional scanning micro-mirror is as follows:
step 1, pretreating a 6-inch SOI wafer, firstly, carrying out standard RCA cleaning on the wafer, washing with deionized water, and drying with nitrogen;
step 2, performing MA6/BA6 contact photoetching on the top silicon of the wafer, and selecting a photoresist AZ5214 with the thickness of 1.5 mu m; after development, a magnetron sputtering technology is adopted to deposit a metal film with the line width of 2 mu m and the thickness of 400nm on an etching area of the top layer silicon; removing the photoresist by using a lift-off process to form a built-in coil;
step 3, performing MA6/BA6 contact type photoetching on the top silicon of the wafer, and selecting a photoresist AZ4620 with the thickness of 8 mu m; after the development, carrying out high-verticality deep silicon etching on the top silicon by an ICP deep silicon etching machine and a BOSCH process until the oxide layer is stopped;
step 4, performing MA6/BA6 contact photoetching on the central area of the top layer silicon, and selecting a photoresist AZ5214 with the thickness of 1.5 mu m; after development, adopting a magnetron sputtering technology to deposit a reflective metal film on the central area of the top layer silicon, wherein the thickness of the deposited film is 250 nm; after the process is finished, a silicon dioxide layer with the thickness of 500nm is deposited by adopting PECVD and is used as a protective layer;
step 5, photoetching is carried out on the back substrate of the wafer, deep silicon etching is carried out by adopting MA6/BA6 contact type photoetching and taking silicon dioxide as a mask, and the etching is stopped when the etching reaches the buried oxide layer;
step 6, placing the wafer in a BOE solution to remove the silicon dioxide layer and release the structure;
and 7, processing the wafer by utilizing a plurality of laser beams to form a curved surface mirror surface with a specific curvature, and leading out a signal to the substrate through a 30-micron Au wire to complete the packaging of the curved surface special-shaped MEMS two-dimensional scanning micro-mirror for testing.
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| CN114035253B (en) * | 2021-11-23 | 2024-06-07 | 西安知微传感技术有限公司 | MEMS micro-mirror with stray light eliminating function, laser scanning equipment and manufacturing method of micro-mirror |
| CN117492198A (en) * | 2022-07-26 | 2024-02-02 | 西安知微传感技术有限公司 | MEMS micro-mirror for improving light path shielding and preparation method thereof |
| CN115220217A (en) * | 2022-08-30 | 2022-10-21 | 觉芯电子(无锡)有限公司 | Electromagnetic MEMS micro-mirror and preparation method thereof |
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