CN113341560B - A kind of curved special-shaped MEMS two-dimensional scanning micromirror and preparation method thereof - Google Patents
A kind of curved special-shaped MEMS two-dimensional scanning micromirror and preparation method thereof Download PDFInfo
- Publication number
- CN113341560B CN113341560B CN202110561169.4A CN202110561169A CN113341560B CN 113341560 B CN113341560 B CN 113341560B CN 202110561169 A CN202110561169 A CN 202110561169A CN 113341560 B CN113341560 B CN 113341560B
- Authority
- CN
- China
- Prior art keywords
- axis
- curved
- mirror
- mems
- dimensional scanning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title claims description 10
- 230000000737 periodic effect Effects 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 239000010410 layer Substances 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 19
- 229920002120 photoresistant polymer Polymers 0.000 claims description 19
- 238000005516 engineering process Methods 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 14
- 238000002508 contact lithography Methods 0.000 claims description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 238000011161 development Methods 0.000 claims description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 238000000206 photolithography Methods 0.000 claims description 5
- 239000011241 protective layer Substances 0.000 claims description 4
- 238000009623 Bosch process Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 238000012545 processing Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
- G02B26/101—Scanning systems with both horizontal and vertical deflecting means, e.g. raster or XY scanners
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/7035—Proximity or contact printers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Micromachines (AREA)
Abstract
Description
技术领域technical field
本发明涉及微机电系统技术，具体涉及一种曲面异型MEMS二维扫描微镜及其制备方法。The invention relates to a micro-electromechanical system technology, in particular to a curved special-shaped MEMS two-dimensional scanning micromirror and a preparation method thereof.
背景技术Background technique
MEMS微镜是指采用光学MEMS技术制造的，把微光反射镜与MEMS驱动器集成在一起的光学MEMS器件。相较于传统的扫描镜，MEMS二维扫描微镜作为新一代三维成像激光雷达的核心部件，具有尺寸小、成本低、扫描频率高、响应速度快和功耗低等优点，广泛应用于光通信、扫描成像、激光雷达等领域。MEMS micromirror refers to an optical MEMS device that is manufactured by optical MEMS technology and integrates a micro-optical mirror and a MEMS driver. Compared with traditional scanning mirrors, MEMS 2D scanning micromirrors, as the core component of a new generation of 3D imaging lidars, have the advantages of small size, low cost, high scanning frequency, fast response speed and low power consumption, and are widely used in optical systems. Communication, scanning imaging, lidar and other fields.
传统的MEMS二维扫描微镜的反射镜面采用平面镜，受限于MEMS扫描微镜转动梁的刚度极限和可靠性等制约，MEMS扫描微镜的扫描角度与转台式激光雷达相比较小，这大大的制约了新一代三维成像激光雷达的应用。The mirror surface of the traditional MEMS two-dimensional scanning micromirror adopts a flat mirror, which is limited by the rigidity limit and reliability of the rotating beam of the MEMS scanning micromirror. Compared with the rotary lidar, the scanning angle of the MEMS scanning micromirror is smaller, which greatly It restricts the application of a new generation of 3D imaging lidar.
发明内容SUMMARY OF THE INVENTION
本发明的目的在于提出一种曲面异形MEMS二维扫描微镜及其制备方法。The purpose of the present invention is to propose a curved special-shaped MEMS two-dimensional scanning micromirror and a preparation method thereof.
实现本发明目的的技术解决方案为：一种曲面异形MEMS二维扫描微镜，包括外框、内框、线圈、曲面镜面、快轴以及慢轴，曲面镜面位于整体结构的中心，通过快轴与内框相连接，内框通过慢轴与外框连接，其中：The technical solution to achieve the purpose of the present invention is: a curved special-shaped MEMS two-dimensional scanning micromirror, including an outer frame, an inner frame, a coil, a curved mirror surface, a fast axis and a slow axis, the curved mirror surface is located in the center of the overall structure, and passes through the fast axis. Connected to the inner frame, the inner frame is connected to the outer frame through the slow axis, where:
曲面镜面采用球冠面，为一个球面被平面所截后剩下的曲面，也可看作圆弧绕过它的一个端点的圆的直径旋转一周得到的面；线圈采用内置方式，由外置永磁体提供与微镜成45°的磁场，通过Z方向的洛伦兹力控制快轴及慢轴的扭臂梁的扭转，实现X轴(慢轴)的扫描与Y轴(快轴)的扫描；曲面异形二维扫描微镜在电磁力的控制下，在X、Y轴实现周期性、高频率摆动。The curved mirror surface adopts a spherical cap surface, which is the surface left after a spherical surface is cut off by a plane. It can also be regarded as a surface obtained by rotating the diameter of a circle with an arc around one of its endpoints. The permanent magnet provides a magnetic field at 45° to the micromirror, and the torsion beam of the fast axis and the slow axis is controlled by the Lorentz force in the Z direction to realize the scanning of the X axis (slow axis) and the scanning of the Y axis (fast axis). Scanning; Curved profiled 2D scanning micromirror realizes periodic and high-frequency oscillation in X and Y axes under the control of electromagnetic force.
进一步的，在快、慢轴上集成微型角度传感器，用于实时反馈快轴及慢轴的扭转信息，为后端进行进一步反馈控制提供信号，以进一步增强微镜转动线性度。Furthermore, miniature angle sensors are integrated on the fast and slow axes to feed back the torsion information of the fast and slow axes in real time, and provide signals for further feedback control at the back end to further enhance the rotational linearity of the micromirror.
更进一步的，微型角度传感器采用磁控溅射技术沉积一层压电薄膜，将压电薄膜置于惠斯通电桥内构成，当梁扭转时产生压力，压电薄膜阻值发生变化，信号通过电桥放大读出。Further, the miniature angle sensor uses magnetron sputtering technology to deposit a layer of piezoelectric film, which is formed by placing the piezoelectric film in a Wheatstone bridge. When the beam is twisted, pressure is generated, the resistance of the piezoelectric film changes, and the signal passes through. Bridge amplified readout.
一种曲面异形二维MEMS微镜的制作方法，采用6英寸MEMS工艺技术，相比较4英寸工艺技术而言，前者具有更高的效率，有利于提升微镜批量化制备水平，制备流程如下：A method for manufacturing a curved special-shaped two-dimensional MEMS micromirror adopts a 6-inch MEMS process technology. Compared with a 4-inch process technology, the former has higher efficiency, which is conducive to improving the batch preparation level of micromirrors. The preparation process is as follows:
步骤1，预处理6英寸SOI晶圆，首先对晶圆进行标准RCA清洗，去离子水冲洗，并氮气吹干；Step 1, pretreat a 6-inch SOI wafer, first perform standard RCA cleaning on the wafer, rinse with deionized water, and blow dry with nitrogen;
步骤2，对晶圆的顶层硅进行MA6/BA6接触式光刻，选用光刻胶AZ5214，光刻胶厚度为1.5μm；显影后采用磁控溅射技术，对顶层硅的刻蚀区域进行线宽为2μm，厚度400nm的金属薄膜沉积；采用lift-off工艺去除光刻胶，形成内置线圈；In step 2, MA6/BA6 contact lithography is performed on the top silicon of the wafer, and photoresist AZ5214 is selected, and the thickness of the photoresist is 1.5 μm; after development, the etched area of the top silicon is subjected to line A metal film with a width of 2 μm and a thickness of 400 nm is deposited; the photoresist is removed by a lift-off process to form a built-in coil;
步骤3，对晶圆的顶层硅进行MA6/BA6接触式光刻，选用光刻胶AZ4620，光刻胶厚度为8μm；显影后通过ICP深硅刻蚀机、BOSCH工艺对顶层硅进行高垂直度深硅刻蚀，刻蚀至氧化层终止；Step 3, perform MA6/BA6 contact lithography on the top silicon of the wafer, select photoresist AZ4620, and the thickness of the photoresist is 8 μm; after development, the top silicon is subjected to high verticality by ICP deep silicon etching machine and BOSCH process Deep silicon etching, etched to the termination of the oxide layer;
步骤4，对顶层硅的中心区域进行MA6/BA6接触式光刻，选用光刻胶AZ5214，光刻胶厚度为1.5μm；显影后采用磁控溅射技术，对顶层硅的中心区域进行反射金属薄膜的沉积，沉积的薄膜厚度为250nm；完成工艺后采用PECVD沉积一层厚度为500nm的二氧化硅层作为保护层；Step 4: Perform MA6/BA6 contact lithography on the central area of the top silicon, using photoresist AZ5214 with a thickness of 1.5 μm; after developing, use magnetron sputtering technology to reflect metal on the central area of the top silicon. Film deposition, the thickness of the deposited film is 250nm; after the process is completed, a silicon dioxide layer with a thickness of 500nm is deposited by PECVD as a protective layer;
步骤5，对晶圆的背部衬底进行光刻，采用MA6/BA6接触式光刻，以二氧化硅作为掩膜，进行深硅刻蚀，刻蚀至埋氧层时，终止刻蚀；Step 5, performing photolithography on the back substrate of the wafer, using MA6/BA6 contact photolithography, and using silicon dioxide as a mask to perform deep silicon etching, and when the etching reaches the buried oxide layer, the etching is terminated;
步骤6，将晶圆放置于BOE溶液中，以去除二氧化硅层，释放结构；Step 6, placing the wafer in the BOE solution to remove the silicon dioxide layer and release the structure;
步骤7，利用复数束激光对晶圆进行微细结构加工，形成特定曲率的曲面镜面，然后通过30微米Au线将信号引出至基板上，完成曲面异形MEMS二维扫描微镜的封装，以备测试。Step 7: Use complex lasers to process the microstructure of the wafer to form a curved mirror surface with a specific curvature, and then lead the signal to the substrate through a 30-micron Au wire to complete the packaging of the curved special-shaped MEMS two-dimensional scanning micromirror for testing .
本发明与现有技术相比，其显著优点为：1)采用曲面异形结构的反射镜面，改变了扫描的空间特性，极大地增大了微镜的扫描角度；2)采用3D MEMS加工工艺，在传统平面MEMS加工艺基础上，引入激光精密刻蚀技术，实现曲率的精度刻蚀，大大提高了加工精度。Compared with the prior art, the present invention has the following significant advantages: 1) the use of a reflective mirror surface with a curved special-shaped structure changes the spatial characteristics of scanning and greatly increases the scanning angle of the micromirror; 2) the use of 3D MEMS processing technology, On the basis of the traditional planar MEMS processing technology, the laser precision etching technology is introduced to realize the precise etching of the curvature, which greatly improves the processing accuracy.
附图说明Description of drawings
图1为本发明曲面异形MEMS二维扫描微镜的结构图。FIG. 1 is a structural diagram of a curved special-shaped MEMS two-dimensional scanning micromirror according to the present invention.
图2为本发曲面异形MEMS二维扫描微镜的工艺制备流程图。FIG. 2 is a flow chart of the process preparation of the curved special-shaped MEMS two-dimensional scanning micromirror of the present invention.
具体实施方式Detailed ways
为了使本申请的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本申请进行进一步详细说明。应当理解，此处描述的具体实施例仅仅用以解释本申请，并不用于限定本申请。In order to make the purpose, technical solutions and advantages of the present application more clearly understood, the present application will be described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application, but not to limit the present application.
如图1所示，一种曲面异形MEMS二维扫描微镜，包括外框、内框、线圈、曲面镜面、快轴以及慢轴，曲面镜面位于整体结构的中心，通过快轴与内框相连接，内框通过慢轴与外框连接，其中：曲面镜面采用球冠面，为一个球面被平面所截后剩下的曲面，也可看作圆弧绕过它的一个端点的圆的直径旋转一周得到的面；线圈采用内置方式，由外置永磁体提供与微镜成45°的磁场，通过Z方向的洛伦兹力控制快轴及慢轴的扭臂梁的扭转，实现X轴(慢轴)的扫描与Y轴(快轴)的扫描；曲面异形二维扫描微镜在电磁力的控制下，在X、Y轴实现周期性、高频率摆动。As shown in Figure 1, a curved special-shaped MEMS two-dimensional scanning micromirror includes an outer frame, an inner frame, a coil, a curved mirror surface, a fast axis and a slow axis. Connection, the inner frame is connected to the outer frame through the slow axis, in which: the curved mirror surface adopts a spherical cap surface, which is the remaining surface after a spherical surface is cut by a plane, and can also be regarded as the diameter of the circle with an arc bypassing one of its endpoints. The surface obtained by one rotation; the coil adopts the built-in method, and the external permanent magnet provides a magnetic field of 45° with the micromirror, and the torsion beam of the fast axis and the slow axis is controlled by the Lorentz force in the Z direction to realize the X axis. (Slow-axis) scanning and Y-axis (fast-axis) scanning; under the control of electromagnetic force, the two-dimensional scanning micromirror with special-shaped curved surface realizes periodic and high-frequency oscillation in the X and Y axes.
所述快、慢轴上集成微型角度传感器，用于实时反馈快轴及慢轴的扭转信息，为后端进行进一步反馈控制提供信号，以进一步增强微镜转动线性度。作为一种优选实施方式，所述微型角度传感器采用磁控溅射技术沉积一层压电薄膜，将压电薄膜置于惠斯通电桥内构成，当梁扭转时产生压力，压电薄膜阻值发生变化，信号通过电桥放大读出。Micro-angle sensors are integrated on the fast and slow axes for real-time feedback of the torsion information of the fast and slow axes, and provide signals for further feedback control at the back end, so as to further enhance the rotational linearity of the micromirror. As a preferred embodiment, the miniature angle sensor uses magnetron sputtering technology to deposit a layer of piezoelectric film, which is formed by placing the piezoelectric film in a Wheatstone bridge. When the beam is twisted, pressure is generated, and the resistance of the piezoelectric film is When the change occurs, the signal is amplified and read out through the bridge.
基于上述结构，本发明还提出一种曲面异形二维MEMS微镜的制作方法，采用6英寸MEMS工艺技术制备，相比较4英寸工艺技术而言，前者具有更高的效率，有利于提升微镜批量化制备水平。如图2所示，制备流程如下：Based on the above structure, the present invention also proposes a method for manufacturing a curved special-shaped two-dimensional MEMS micromirror, which is prepared by using a 6-inch MEMS process technology. Compared with a 4-inch process technology, the former has higher efficiency and is conducive to improving the micromirror. Batch preparation level. As shown in Figure 2, the preparation process is as follows:
步骤1，对6英寸SOI晶圆进行预处理；Step 1, preprocess the 6-inch SOI wafer;
首先对6英寸SOI晶圆进行标准RCA清洗，去除硅片表面的有机沾污，溶解氧化膜，去除颗粒、金属等沾污，同时使硅片表面钝化，再用去离子水冲洗晶圆，并用氮气吹干；First, standard RCA cleaning is performed on the 6-inch SOI wafer to remove organic contamination on the surface of the silicon wafer, dissolve the oxide film, remove contamination such as particles and metals, and passivate the surface of the silicon wafer at the same time, and then rinse the wafer with deionized water. and dry with nitrogen;
步骤2，沉积微镜的内置线圈；Step 2, depositing the built-in coil of the micromirror;
对晶圆的顶层硅进行MA6/BA6接触式光刻，选用光刻胶AZ5214，光刻胶厚度为1.5μm；显影后采用磁控溅射技术，对顶层硅的刻蚀区域进行线宽为2μm，厚度为400nm的金属薄膜沉积；最后采用lift-off工艺去除光刻胶，形成内置线圈；Perform MA6/BA6 contact lithography on the top silicon of the wafer, using photoresist AZ5214, the thickness of the photoresist is 1.5μm; after development, the magnetron sputtering technology is used, and the line width of the etched area of the top silicon is 2μm , a metal film with a thickness of 400nm is deposited; finally, a lift-off process is used to remove the photoresist to form a built-in coil;
步骤3，对顶层硅进行高垂直度深硅刻蚀；Step 3, perform high vertical deep silicon etching on the top layer silicon;
对顶层硅进行MA6/BA6接触式光刻，使用光刻胶AZ4620，光刻胶厚度为8μm；显影后通过ICP深硅刻蚀机、BOSCH工艺，首先采用氟基活性基团对顶层硅进行垂直方向的刻蚀，然后进行侧壁钝化，刻蚀和保护两步工艺交替进行，刻蚀至氧化层终止，实现对顶层硅的高垂直度深硅刻蚀；MA6/BA6 contact lithography was performed on the top layer silicon, using photoresist AZ4620, and the thickness of the photoresist was 8 μm; after development, through ICP deep silicon etching machine and BOSCH process, firstly, fluorine-based active groups were used to verticalize the top layer silicon. Directional etching, then passivation of the sidewall, alternate two-step processes of etching and protection, etching to the termination of the oxide layer, to achieve high vertical deep silicon etching of the top layer silicon;
步骤4，沉积反射金属膜，并在表面沉积一层二氧化硅作为保护层；Step 4, depositing a reflective metal film, and depositing a layer of silicon dioxide on the surface as a protective layer;
对顶层硅的中心区域MA6/BA6接触式光刻，选用光刻胶AZ5214，光刻胶厚度为1.5μm；显影后采用磁控溅射技术，对顶层硅的中心区域进行反射金属薄膜的沉积，金属薄膜厚度为250nm；完成工艺后采用PECVD方法沉积一层500nm厚的二氧化硅层作为保护层；For the contact lithography of MA6/BA6 in the central area of the top silicon, the photoresist AZ5214 is used, and the thickness of the photoresist is 1.5 μm; after development, the magnetron sputtering technology is used to deposit the reflective metal film on the central area of the top silicon, The thickness of the metal film is 250nm; after the process is completed, a 500nm-thick silicon dioxide layer is deposited by PECVD as a protective layer;
步骤5，对背部衬底进行光刻；Step 5, performing photolithography on the back substrate;
对晶圆的背部衬底进行MA6/BA6接触式光刻，以二氧化硅作为掩膜，进行深硅刻蚀，刻蚀至埋氧层终止；Perform MA6/BA6 contact lithography on the back substrate of the wafer, use silicon dioxide as a mask, perform deep silicon etching, and etch until the buried oxide layer terminates;
步骤6，释放结构；Step 6, release the structure;
将SOI晶圆放置于BOE溶液中，以去除二氧化硅层，释放结构；Place the SOI wafer in a BOE solution to remove the silicon dioxide layer and release the structure;
步骤7，加工特定曲率的反射镜面；Step 7, processing a mirror surface with a specific curvature;
利用复数束激光对晶圆进行微细结构加工，形成特定曲率的曲面镜面，然后通过30微米Au线将信号引出至基板上，完成曲面异形MEMS二维扫描微镜的封装，以备测试。The wafer is microstructured by multiple laser beams to form a curved mirror surface with a specific curvature, and then the signal is extracted to the substrate through a 30-micron Au wire to complete the packaging of the curved special-shaped MEMS two-dimensional scanning micromirror for testing.
综上所述，本发明采用曲面异形结构，用曲面镜代替平面镜，极大地增加了MEMS二维扫描微镜的扫描视场，增大了激光雷达的扫描角度。To sum up, the present invention adopts a curved special-shaped structure and uses a curved mirror instead of a flat mirror, which greatly increases the scanning field of view of the MEMS two-dimensional scanning micromirror and increases the scanning angle of the laser radar.
以上实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。The technical features of the above embodiments can be combined arbitrarily. In order to make the description simple, all possible combinations of the technical features in the above embodiments are not described. However, as long as there is no contradiction in the combination of these technical features It is considered to be the range described in this specification.
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。The above-mentioned embodiments only represent several embodiments of the present application, and the descriptions thereof are specific and detailed, but should not be construed as a limitation on the scope of the invention patent. It should be pointed out that for those skilled in the art, without departing from the concept of the present application, several modifications and improvements can be made, which all belong to the protection scope of the present application. Therefore, the scope of protection of the patent of the present application shall be subject to the appended claims.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110561169.4A CN113341560B (en) | 2021-05-22 | 2021-05-22 | A kind of curved special-shaped MEMS two-dimensional scanning micromirror and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110561169.4A CN113341560B (en) | 2021-05-22 | 2021-05-22 | A kind of curved special-shaped MEMS two-dimensional scanning micromirror and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113341560A CN113341560A (en) | 2021-09-03 |
| CN113341560B true CN113341560B (en) | 2022-09-27 |
Family
ID=77470773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110561169.4A Active CN113341560B (en) | 2021-05-22 | 2021-05-22 | A kind of curved special-shaped MEMS two-dimensional scanning micromirror and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113341560B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114035253B (en) * | 2021-11-23 | 2024-06-07 | 西安知微传感技术有限公司 | MEMS micro-mirror with stray light eliminating function, laser scanning equipment and manufacturing method of micro-mirror |
| CN117492198A (en) * | 2022-07-26 | 2024-02-02 | 西安知微传感技术有限公司 | A MEMS micromirror that improves light path blocking and its preparation method |
| CN115220217A (en) * | 2022-08-30 | 2022-10-21 | 觉芯电子(无锡)有限公司 | Electromagnetic MEMS micro-mirror and preparation method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101266335A (en) * | 2007-03-12 | 2008-09-17 | 精工爱普生株式会社 | Actuating mechanism, optical scanner and image forming device |
| CN102692705A (en) * | 2011-06-16 | 2012-09-26 | 重庆大学 | MOEMS (Micro Optoelectro Mechanical System)-process-based micro scanning raster based on of integrating angle sensor |
| CN103399402A (en) * | 2013-08-13 | 2013-11-20 | 国家纳米科学中心 | Electromagnetic-driven miniature two-dimensional scanning mirror device |
| CN105301764A (en) * | 2015-12-09 | 2016-02-03 | 重庆大学 | MOEMS scanning raster micromirror system |
| CN108519673A (en) * | 2018-04-28 | 2018-09-11 | 重庆大学 | Scanning Micromirror with Integrated Differential Angle Sensor |
| CN108710138A (en) * | 2018-01-29 | 2018-10-26 | 上海思致汽车工程技术有限公司 | A kind of broad field laser radar system based on MEMS |
| CN110687675A (en) * | 2019-09-09 | 2020-01-14 | 歌尔股份有限公司 | Galvanometer system, micro-projection device and electronic device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9791370B2 (en) * | 2015-04-14 | 2017-10-17 | Honeywell International Inc. | Die-integrated aspheric mirror |
-
2021
- 2021-05-22 CN CN202110561169.4A patent/CN113341560B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101266335A (en) * | 2007-03-12 | 2008-09-17 | 精工爱普生株式会社 | Actuating mechanism, optical scanner and image forming device |
| CN102692705A (en) * | 2011-06-16 | 2012-09-26 | 重庆大学 | MOEMS (Micro Optoelectro Mechanical System)-process-based micro scanning raster based on of integrating angle sensor |
| CN103399402A (en) * | 2013-08-13 | 2013-11-20 | 国家纳米科学中心 | Electromagnetic-driven miniature two-dimensional scanning mirror device |
| CN105301764A (en) * | 2015-12-09 | 2016-02-03 | 重庆大学 | MOEMS scanning raster micromirror system |
| CN108710138A (en) * | 2018-01-29 | 2018-10-26 | 上海思致汽车工程技术有限公司 | A kind of broad field laser radar system based on MEMS |
| CN108519673A (en) * | 2018-04-28 | 2018-09-11 | 重庆大学 | Scanning Micromirror with Integrated Differential Angle Sensor |
| CN110687675A (en) * | 2019-09-09 | 2020-01-14 | 歌尔股份有限公司 | Galvanometer system, micro-projection device and electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113341560A (en) | 2021-09-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113341560B (en) | A kind of curved special-shaped MEMS two-dimensional scanning micromirror and preparation method thereof | |
| CN104765144B (en) | Electromagnetic-electrostatic hybrid driving two-dimensional micro-scanning mirror and manufacturing method | |
| JP6349229B2 (en) | Biaxial optical deflector and manufacturing method thereof | |
| JP2004326083A (en) | Method for manufacturing mirror, and mirror device | |
| CN101937128A (en) | A MEMS micromirror driven by a three-piezoelectric cantilever beam and its manufacturing method | |
| CN108732743B (en) | Oscillation structure, optical apparatus, and method of manufacturing oscillation structure | |
| CN103086316A (en) | MEMS vertical comb micro-mirror surface driver manufacturing method | |
| CN114477076B (en) | Processing method of Fabry-Perot acceleration sensitive chip suitable for double-layer beam structure | |
| CN104326440A (en) | Method for manufacturing micro-nano structure with depth accurately controlled | |
| JP2004198648A (en) | Planar type actuator | |
| CN110440897A (en) | The preparation method of Echo Wall microcavity acoustic sensor and its dicyclo resonant cavity | |
| CN101446682B (en) | Preparation method of continuous diaphragm type micro deformable mirror based on SOI | |
| CN105022163B (en) | A mirror with adjustable focal length | |
| CN109160481B (en) | Two-dimensional magnetic drive scanning micro-mirror based on MEMS (micro-electromechanical systems) process and preparation method thereof | |
| CN102275868A (en) | Pre-buried mask wet etching process for silicon micro mechanical structure | |
| CN110632754B (en) | A linear micromachined bidirectional torsion mirror array and its manufacturing method | |
| CN114477079B (en) | A method for processing an integrated Fabry-Perot MEMS acceleration sensitive chip | |
| WO2023104177A1 (en) | Micro-electro-mechanical system (mems) scanning mirror and preparation method therefor | |
| CN109001179B (en) | Metal V-shaped grating Fano resonance structure with adjustable tip distance | |
| Huang et al. | Biaxial Lissajous scanning piezoelectric MEMS mirror based on high fill factor and large optical aperture | |
| JPH11119123A (en) | Optical switch and manufacture thereof | |
| CN204883046U (en) | Speculum of adjustable focal length | |
| Jang et al. | Design, fabrication and characterization of an electromagnetically actuated addressable out-of-plane micromirror array for vertical optical source applications | |
| CN116902907A (en) | MEMS micro-mirror preparation method adopting metal sacrificial layer | |
| CN119118053B (en) | A method for forming a micro-nano cavity structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |