CN113340430B - Spatially-resolved heat radiation super-surface device based on phase-change material and preparation method and device thereof - Google Patents
Spatially-resolved heat radiation super-surface device based on phase-change material and preparation method and device thereof Download PDFInfo
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
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- 229910000618 GeSbTe Inorganic materials 0.000 description 2
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- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 description 1
- SCZZGVQQIXBCTC-UHFFFAOYSA-N [Sb].[Se].[Ge] Chemical compound [Sb].[Se].[Ge] SCZZGVQQIXBCTC-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
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- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
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- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
- C09K5/02—Materials undergoing a change of physical state when used
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/14—Thermal energy storage
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- Combustion & Propulsion (AREA)
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Abstract
The invention provides a spatially-resolved heat radiation super-surface device based on a phase-change material, and a preparation method and a device thereof, wherein the super-surface device comprises a reflecting layer, a spacing layer and a phase-change material layer which are sequentially arranged on a substrate; the phase change material layer comprises a plurality of phase change units; optionally, a protective layer is arranged on the outer surface of the phase change material layer, and the protective layer is transparent to light waves in a specific wavelength range. The preparation method comprises sequentially depositing a reflecting layer, a spacer layer, a phase change material layer and a protective layer on a substrate; and through laser pulse irradiation, phase state transition occurs in the irradiated area of the phase change material layer, so that a plurality of phase change units are formed. The device comprises a laser, a focusing assembly, a displacement platform and a computer. The preparation method realizes nonvolatile dynamic regulation and control of heat radiation, realizes spatially-resolved regulation and control of heat radiation in a laser direct writing mode, and has more flexibility in use.
Description
Technical Field
The invention belongs to the technical field of heat radiation control and detection, and particularly relates to a spatially-resolved heat radiation super-surface device based on a phase-change material, and a preparation method and a preparation device thereof.
Background
Thermal radiation is a physical process that outputs energy in the form of electromagnetic waves caused by thermal motion of charged particles. From the Stefan-Boltzmann law, the radiant emittance of thermal radiation of an object is proportional to its emissivity epsilon and also to the 4 th power of the temperature T (absolute temperature scale) of the object. Thus, controlling one or both of the temperature and the thermal radiation of the object may enable control of the thermal radiation of the object. In the field of thermal radiation control, thermal radiation regulation in the temporal or spatial domain can be applied to radiant energy transport applications represented by radiant refrigeration, infrared detection applications represented by gas identification/molecular detection, infrared information exchange applications represented by infrared feature camouflage/infrared passive tags, and the like.
By designing the structural parameters differently and the dimensions on the order of the radiation wavelength (10) –6 m-magnitude), the thermal radiation characteristics (such as radiation emittance, spectral emissivity peak position, etc.) of the unit are affected by the structural parameter differences, so that a device composed of the above-described structural unit array has a spatially distinguishable thermal radiation pattern. Since the heat radiation pattern is closely related to the spatial distribution of the structural units of different structural parameters, the spatially resolved heat achieved in the above mannerThe radiation pattern is determined after the device fabrication is complete and a spatially resolved reconfiguration of the thermal radiation pattern cannot be achieved.
Reconfigurable spatially resolvable heat-radiating devices (CN 110530523B) based on phase-change hysteresis effect have been proposed by researchers, but this approach has the following limitations: (1) The method is only suitable for a phase change material system with obvious hysteresis characteristics, such as when the phase change state of the vanadium dioxide phase change material is controlled in a temperature control mode; (2) The heat radiation space pattern configured by the method must be maintained at a specific temperature, and thus an additional temperature control component is required to maintain the configured heat radiation space pattern.
In summary, there is no method for realizing spatially-resolved and reconfigurable dynamic thermal radiation control without maintaining a specific temperature, which is independent of phase-change hysteresis.
Disclosure of Invention
Aiming at the defects and shortcomings in the prior art, the invention provides a spatially-resolved heat radiation super-surface device based on a phase-change material, and a preparation method and a device thereof. The preparation method does not depend on phase-change hysteresis materials, does not need specific temperature to maintain a phase-change state, and can simultaneously realize a heat radiation pattern which is spatially distinguishable and reconfigurable.
A spatially resolved heat radiation super-surface device based on phase change material comprises a reflecting layer, a spacing layer and a phase change material layer which are sequentially arranged on a substrate;
the phase change material layer comprises a plurality of phase change units;
optionally, a protective layer is arranged on the outer surface of the phase change material layer, and the protective layer is transparent to light waves in a specific wavelength range.
In the above technical solution, the plurality of phase change cells included in the phase change material layer and other areas (non-phase change areas) of the phase change material layer except the phase change cells form a heat radiation pattern.
The specific wavelength refers to the wavelength of phase change of the phase change material layer, and the wavelength is 400-2500 nm; the protective layer is transparent to light waves at the wavelength so that the phase change material layer absorbs all incident laser light.
The phase change material layer absorbs light waves in the wavelength range of 400-2500 nm, namely the phase change material can realize phase state transition in the wavelength range. The protection layer is used for protecting the phase change material layer.
Preferably, the reflecting layer is a metal film layer or a dielectric film system with the spectral reflectivity of more than 0.9 (or 90%) in a target wave band;
the spacer layer is made of a dielectric material with an extinction coefficient smaller than 0.5 in a target wave band;
the phase change material layer selects a material that causes a microstructure transformation by external excitation, either optical, electrical, thermal or chemical.
In the above technical solution, the target wavelength band is an application wavelength of the spatially resolved heat radiation super surface device based on the phase change material, that is, the spatially resolved heat radiation super surface device based on the phase change material can exhibit a corresponding heat radiation pattern at the application wavelength.
Further preferably, the wavelength of the target wavelength band is 2 to 25 μm. More preferably, the wavelength ranges are one or all of 3 to 5 μm and 8 to 14. Mu.m.
As a further preference, the protective layer material is one or more of silicon oxide, silicon nitride, zinc sulfide, aluminum oxide, or titanium oxide;
the phase change material layer is a germanium antimony tellurium alloy or germanium antimony selenium tellurium alloy layer;
the spacer layer material is one or more of silicon, germanium, oxide (such as silicon oxide, aluminum oxide, hafnium oxide, tantalum oxide, zinc oxide, titanium oxide and the like), nitride (such as silicon nitride, aluminum nitride and the like), zinc selenide or zinc sulfide and the like;
the reflecting layer material is one or more of gold, silver, aluminum, platinum, chromium, tungsten, titanium nitride and the like.
Preferably, the thickness of the reflecting layer is 50-200 nm; the thickness of the spacing layer is 100-5000 nm; the thickness of the phase change material layer is 5-100 nm; the thickness of the protective layer is 5-50 nm.
Preferably, the substrate and the reflective layer may be made of the same material, or other materials capable of supporting the reflective layer, the spacer layer, the phase change material layer, and the protective layer.
Preferably, the diameter (or equivalent diameter) of the phase change cells is less than the wavelength of the target band of the spatially resolved thermally radiating subsurface device based on phase change material, and there is a spacing between at least two phase change cells less than the wavelength of the target band.
Further preferably, the wavelength of the target wavelength band is 2 to 25 μm. More preferably, the wavelength ranges are one or all of 3 to 5 μm and 8 to 14. Mu.m.
Further preferably, the phase change cells have a diameter of 0.1 to 10 μm, and the interval between at least two phase change cells is 0.1 to 10 μm.
In the above technical solution, the interval between at least two phase change units refers to the minimum interval between adjacent phase change units, and it can also be understood that there is at least an interval between any two adjacent phase change units.
A method of fabricating a spatially resolved thermally radiative subsurface device based on phase change material as claimed in any one of the preceding claims, comprising the steps of:
(1) Sequentially depositing a reflecting layer, a spacing layer, a phase change material layer and a protective layer on a substrate;
(2) And irradiating the irradiated area of the phase change material layer by laser pulse to generate phase state transition, so as to form the plurality of phase change units.
In the above technical solution, the phase change unit is a phase change transition area induced by a light spot after the laser pulse irradiates the phase change material layer. Before the phase change material layer forms the heat radiation pattern, the phase change material layer has only one phase state, and the phase state is defined as a non-phase state; the region which undergoes phase transition after laser pulse irradiation is a phase change unit.
Preferably, the pulse width of the laser pulse is 10fs to 100ms, and the laser peak power is 1 to 1000mW.
Preferably, the method may further comprise: and (3) carrying out phase state transition on the irradiated area of the phase change material layer by laser pulse irradiation, and recovering the original phase change unit to an initial state. The initial state is a non-phase change state.
Preferably, the phase change material layer comprises two phase states of crystalline state and amorphous state, and the two phase states can be mutually converted through laser pulse irradiation.
As a further preference, when the phase change material layer undergoes a transition from the crystalline state to the amorphous state, the pulse width of the laser pulse used is 10fs to 100ns, and the peak power is 10 to 1000mW;
when the phase change material layer is converted from an amorphous state to a crystalline state, the pulse width of the laser pulse is 10 fs-100 ms, and the peak power is 1-100 mW.
A device for fabricating a spatially resolved thermally radiative subsurface device based on phase change material as claimed in any one of the preceding claims, comprising:
a laser providing laser pulses for switching phase change states of the plurality of phase change cells;
a focusing assembly for focusing the laser pulse emitted by the laser and irradiating the laser pulse onto the phase change material device;
a displacement platform for adjusting the relative position of the phase change material device and the focused light beam, wherein the positioning precision of the displacement platform is 1-500 nm;
and a controller for controlling the laser and the displacement platform to work. Preferably, the controller is a computer.
In the above technical scheme, the controller is used for controlling the laser to emit laser pulses according to a set time sequence; and the device is used for controlling the rest time and the moving position of the displacement platform, further controlling the irradiation time of single laser pulse on the phase change material device and the irradiation positions of multiple laser pulses on the phase change material device, and further controlling the distribution of the phase change units.
The controller controls the displacement platform to work, and can control the position of the light spot irradiated to the surface of the phase change material device with 0.1-10 mu m precision.
And the area irradiated by the laser spot focused by the focusing assembly on the phase change material device is subjected to phase change to form a phase change unit. The light spot irradiation positions, the light spot number and the light spot space distribution are realized by the movement of a displacement platform controlled by a computer.
Preferably, the phase change material device is fixed, the displacement platform controls the laser to move, and the adjustment of the relative position between the phase change material device and the laser is realized; and the relative position of the two devices can be adjusted by adopting a fixed laser and moving the phase change material device through a displacement platform.
Preferably, the working wavelength of the laser is 400-2500 nm; the irradiation time of single laser pulse is 1 fs-0.1 s;
the beam waist radius of the light spot focused by the focusing assembly is 0.1-10 mu m.
Preferably, the focusing component is a microscope objective or a microscope group with additional functions such as illumination, imaging and the like; wherein the magnification of the microscope objective is 10-100 times, and the diameter of the focused light spot is 0.1-10 mu m.
Preferably, the preparation device further comprises a detection system for detecting the heat radiation state of the phase change material device. The heat radiation state of the phase change material device is determined by the number of phase change units in a unit area, the phase change units in different numbers are arranged in the unit area, the spectral radiance of the unit area is different, and the phase change material device shows different heat radiation characteristics.
The preparation device of the invention utilizes the laser to output the laser pulse with adjustable pulse width and pulse power, combines the displacement platform to realize the control of the light spot irradiation position, irradiates the heat radiation super-surface device after being focused by the focusing assembly, realizes the control of the phase change states of different positions of the adjustable heat radiation super-surface device according to the preset space position, the laser pulse width and the pulse power by the computer system, and further realizes the modulation of the heat radiation states of different space positions of the adjustable heat radiation super-surface device.
The method for dynamically controlling the spatially resolved thermal radiation based on the phase change material utilizes the preparation device of the spatially resolved thermal radiation super-surface device based on the phase change material to dynamically control the quantity, the position and/or the phase change state of the phase change units.
The invention provides a spatially-resolved thermal radiation dynamic control system and a spatially-resolved thermal radiation dynamic control method based on a nonvolatile phase change material, which are mainly applied to the following aspects:
(1) The dynamic heat radiation regulation and control technology has potential in the application of object infrared characteristic regulation and control, heat radiation energy transportation and the like;
(2) The non-volatile heat radiation regulation and control can realize the heat radiation pattern drawing with zero static power, and no additional energy supply is needed to maintain the drawn heat radiation pattern;
(3) The planar device combines the laser direct writing super surface mode to realize the accurate control of heat radiation, reduces the dependence on complex micro-nano processing technology, and has the characteristics of easy processing, large-area preparation and the like.
The existing space-resolved thermal radiation dynamic regulation and control method is mostly an adjustable radiation unit array prepared based on a micro-nano processing technology, is limited by the processing difficulty and can be rarely used in large-area occasions. The invention utilizes the phase change material with reversible phase change characteristic, combines the resonant cavity type optical structure, adopts the laser pulse irradiation mode for controlling the pulse width to prepare the heat radiation super-surface device, and realizes the heat radiation dynamic regulation and control with space resolution. The technology can quickly regulate and control the heat radiation with low cost, large area and high dynamic range, and does not need additional energy supply to maintain and control, so that the active infrared camouflage and thermal infrared communication device based on dynamic heat radiation regulation and control has more practicability.
Compared with the prior art, the invention has the beneficial effects that:
the heat radiation super-surface device realizes nonvolatile heat radiation dynamic regulation and control based on the phase change material; by utilizing the nonvolatile phase change characteristic, the drawn heat radiation pattern can be maintained without additional energy; the heat radiator is based on one-dimensional film design, so that the heat radiator is easy to process and apply in a large area; the laser direct writing mode realizes the spatially resolvable thermal radiation regulation and control, and compared with the structure which is designed in advance and changes geometric characteristics along with the spatial position by processing, the preparation method has more flexibility.
The invention utilizes the phase change material with reversible phase change characteristic, combines the resonant cavity type optical structure, adopts the laser pulse irradiation mode for controlling the pulse width to prepare the heat radiation super-surface device, and realizes the heat radiation dynamic regulation and control with space resolution. The technology can quickly regulate and control the heat radiation with low cost, large area and high dynamic range, and does not need additional energy supply to maintain and control, so that the active infrared camouflage and thermal infrared communication device based on dynamic heat radiation regulation and control has more practicability.
Drawings
FIG. 1 is a schematic structural view of a production apparatus in example 1;
FIG. 2 is a schematic diagram of the structure of a heat-radiating subsurface device in example 2;
FIG. 3 (a) is a scanning electron microscope image of a heat radiating subsurface device with different numbers of phase change cells per unit area; (b) An infrared spectrum emissivity contrast diagram of the heat radiation super-surface device with different numbers of phase change units in unit area;
fig. 4 is a diagram of an application example of embodiment 2.
In the figure:
1. a computer; 2. a laser; 3. focusing assembly: 31. an illumination and imaging light path; 32. a microobjective; 4. a displacement platform; 5. a phase change material device; 51. a reflective layer; 52. a spacer layer; 53. a phase change material layer; 54. a protective layer; 55. a phase change unit; 56. a non-phase change region; 6. scanning electron microscope image of heat radiation super surface device (scale bar 1 μm): 61-68, scanning electron microscope images having different numbers of phase change cells per unit area, respectively; 7. spectral emissivity of thermally radiating subsurface device: 71-78, respectively, have different numbers of phase change cells per unit area (wherein the curves 71-78 correspond to the areas indicated by 61-68, respectively, one-to-one).
Detailed Description
The following detailed description of specific embodiments of the invention refers to the accompanying drawings: the present embodiment is premised on the spatially-resolved dynamic control system and method for thermal radiation based on nonvolatile phase change material according to the present invention, but the protection scope of the present invention is not limited to the following embodiments and cases.
Example 1
As shown in fig. 1, a preparation apparatus of a spatially resolved thermal radiation super surface device based on a phase change material includes: computer 1, laser 2, focusing element 3, displacement platform 4. The heat radiation super surface device 5 is fixed on the displacement stage 4.
The laser 2 is controlled by the computer 1 to generate laser pulses. The laser pulse is converged by the focusing assembly 3 and then irradiated on the phase change material device 5, the phase change material layer 53 induces phase change by absorbing heat of the laser, a plurality of phase change cells 55 are formed in the irradiated area, and the non-irradiated part is in a non-phase change state and is marked as a non-phase change area 56. Control of the spatial distribution of the phase change cells 55 on the phase change material layer 53 can be achieved by controlling the position of the phase change material device 5 by the displacement platform 4.
Example 2
Silicon is used as a substrate material, and a reflecting layer, a spacing layer, a phase change material layer and a protective layer are sequentially deposited on the silicon substrate. The reflecting layer is a 100nm gold film deposited by electron beam evaporation, the spacing layer is a 850nm zinc sulfide film deposited by electron beam evaporation, the phase change material layer is a 25nm germanium-antimony-tellurium alloy film deposited by magnetron sputtering, and the protective layer is a 30nm aluminum oxide film deposited by electron beam evaporation. The phase change material device with the amorphous phase change material layer is prepared for preparing 8 heat radiation super-surface devices.
The structure of the phase change material device is shown in fig. 2, and the structure is formed by a reflective layer 51, a spacer layer 52, a phase change material layer 53 and a protective layer 54 in sequence from a substrate (not shown in the figure).
The phase change material device prepared above was irradiated with laser pulse (pulse width is 6ms, power is 3.12 mW), so that phase transition from amorphous state to crystalline state occurred in the irradiated region of the phase change material layer, 8 kinds of regions containing different numbers of phase change units (the phase change units with diameters of 2 μm are randomly and uniformly distributed in the phase change material layer, and the phase change material converted into crystalline state accounts for 0%,11%,23%,34%,45%,56%,68% and 78% of the volume of the phase change material layer) were formed in the phase change material layer, respectively, and 8 kinds of heat radiation super surface devices with different heat radiation patterns were obtained, respectively denoted as 61 to 68#.
The scanning electron microscope observation was carried out on the 61 # to 68# heat radiation super surface devices, and the results are shown in fig. 3 (a). Fig. 3 (a) shows the spatial distribution control of phase change cells on 8 heat radiating subsurface devices. Since the spot size of the laser beam focused by the micro objective lens 32 is smaller than the peak radiation wavelength of the thermal radiation, the device formed by the phase change unit 55 realizes the thermal radiation control by the super-surface structure of sub-wavelength. Besides the spectral emissivity amplitude, the radiation super-surface device can also regulate and control the spectral emissivity on the characteristics of peak wavelength, peak amplitude and the like.
As a result of measuring the infrared spectrum emissivity of the 61 to 68# heat radiation super surface devices, as shown in fig. 3 (b), curves 71 to 78 correspond to 61 to 68# heat radiation super surface devices, respectively, one by one, as shown in fig. 3 (b). As can be seen from fig. 3 (b), the number of phase change cells per unit area on the phase change material layer directly affects the spectral emissivity of the phase change material layer per unit area, i.e., affects the heat radiation characteristics thereof.
As shown in fig. 4, an application example diagram of continuous regulation of radiation emittance realized by a thermal radiation super-surface device based on a nonvolatile phase change material is shown.
Claims (7)
1. The spatially-resolved heat radiation super-surface device based on the phase-change material is characterized by comprising a reflecting layer, a spacing layer and a phase-change material layer which are sequentially arranged on a substrate;
the phase change material layer comprises a plurality of phase change units, the diameter of each phase change unit is smaller than the wavelength of a target wave band of the spatially distinguishable heat radiation super-surface device based on the phase change material, and the interval between at least two phase change units is smaller than the wavelength of the target wave band.
2. The spatially resolved thermal radiation super surface device based on phase change material according to claim 1, wherein a protective layer is provided on the outer surface of the phase change material layer, said protective layer being transparent for light waves in a specific wavelength range.
3. The spatially resolved thermal radiation super surface device based on phase change material as defined in claim 1, wherein said reflection layer is a metal film layer or a dielectric film system with spectral reflectance of more than 0.9 in a target band;
the spacer layer is made of a dielectric material with an extinction coefficient smaller than 0.5 in a target wave band;
the phase change material layer selects a material that causes a microstructure transformation by external excitation, either optical, electrical, thermal or chemical.
4. The spatially resolved thermal radiation super surface device based on phase change material according to claim 1, wherein the diameter of said phase change unit is 0.1-10 μm and the interval between at least two phase change units is 0.1-10 μm.
5. A method of producing a spatially resolved thermally radiating subsurface device based on phase change material as defined in any of claims 1 to 4, comprising the steps of:
(1) Sequentially depositing a reflecting layer, a spacing layer, a phase change material layer and a protective layer on a substrate;
(2) And irradiating the irradiated area of the phase change material layer by laser pulse to generate phase state transition, so as to form the plurality of phase change units.
6. The method according to claim 5, wherein the pulse width of the laser pulse is 10fs to 100ms, and the laser peak power is 1 to 1000mW.
7. The method of claim 5, further comprising: and (3) carrying out phase state transition on the irradiated area of the phase change material layer by laser pulse irradiation, and recovering the original phase change unit to an initial state.
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| CN109434289A (en) * | 2018-12-18 | 2019-03-08 | 北京工业大学 | A kind of femtosecond laser manufacturing method on the tunable super surface of phase transformation nanostructure |
| CN110530523A (en) * | 2019-08-29 | 2019-12-03 | 浙江大学 | The distinguishable heat radiation device in space, control system and method based on phase transformation hysteresis |
| CN111457236A (en) * | 2020-03-21 | 2020-07-28 | 复旦大学 | Full-thermal super surface presenting infrared thermal illusion and being invisible under visible light |
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