CN113848657A - Reconfigurable and nonvolatile flat lens based on phase change material and manufacturing method thereof - Google Patents
Reconfigurable and nonvolatile flat lens based on phase change material and manufacturing method thereof Download PDFInfo
- Publication number
- CN113848657A CN113848657A CN202111212287.0A CN202111212287A CN113848657A CN 113848657 A CN113848657 A CN 113848657A CN 202111212287 A CN202111212287 A CN 202111212287A CN 113848657 A CN113848657 A CN 113848657A
- Authority
- CN
- China
- Prior art keywords
- phase
- change material
- phase change
- film
- reconfigurable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012782 phase change material Substances 0.000 title claims abstract description 106
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 230000008859 change Effects 0.000 claims abstract description 22
- 230000005284 excitation Effects 0.000 claims abstract description 19
- 230000003287 optical effect Effects 0.000 claims abstract description 17
- 238000005253 cladding Methods 0.000 claims abstract description 16
- 238000010521 absorption reaction Methods 0.000 claims abstract description 13
- 230000009471 action Effects 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 80
- 238000009826 distribution Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000009210 therapy by ultrasound Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 229910000618 GeSbTe Inorganic materials 0.000 claims description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- RBFDCQDDCJFGIK-UHFFFAOYSA-N arsenic germanium Chemical compound [Ge].[As] RBFDCQDDCJFGIK-UHFFFAOYSA-N 0.000 claims description 3
- 238000007664 blowing Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 3
- VDDXNVZUVZULMR-UHFFFAOYSA-N germanium tellurium Chemical compound [Ge].[Te] VDDXNVZUVZULMR-UHFFFAOYSA-N 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 239000011669 selenium Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 3
- 239000012498 ultrapure water Substances 0.000 claims description 3
- 230000014759 maintenance of location Effects 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 230000033228 biological regulation Effects 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 7
- 239000012071 phase Substances 0.000 description 47
- 239000000463 material Substances 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 230000001105 regulatory effect Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005520 electrodynamics Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
- G02F1/009—Thermal properties
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0102—Constructional details, not otherwise provided for in this subclass
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention relates to a reconfigurable nonvolatile flat lens based on a phase change material and a manufacturing method thereof. The device comprises a medium substrate, a first substrate and a second substrate, wherein the medium substrate can transmit a light beam of a target waveband; the phase change material film is arranged on the surface of the medium substrate, and the phase change material contained in the phase change material film can be in different states under the action of external excitation and corresponds to different phase states of the flat lens; and the cladding film is arranged on the surface of the phase-change material film, the cladding film has low absorption to a target waveband and a reconstruction waveband, and the reconstruction waveband is a femtosecond laser beam waveband for reconstructing the surface phase of the flat lens. The reconfigurable and nonvolatile flat lens based on the phase change material and the manufacturing method thereof realize the reconfigurable and nonvolatile space optical field regulation and control by utilizing different phase change states of the phase change material film, and the flat lens is transparent in a target waveband, can realize the phase regulation and control of a complete period, and realizes the effect of light beam convergence by specific surface phase regulation and control.
Description
Technical Field
The invention relates to the technical field of microelectronics, in particular to a reconfigurable nonvolatile flat lens based on a phase-change material and a manufacturing method thereof.
Background
Compared with the traditional optical lens, the flat lens has the advantages of strong light maneuverability, flexible design, easy integration and the like, and has stronger competitiveness in the future lens market. The existing flat lens processing modes mainly comprise two types: the first is to process a medium microstructure with a sub-wavelength scale on a substrate film by methods such as electron beam exposure, focused ion beam technology or nanoimprint; the second is to match the liquid crystal material by rubbing phase matching, photo matching and other methods to realize specific liquid crystal orientation distribution. But both methods fail to achieve a reconfigurable, non-volatile flat lens. Although the surface structure reconfiguration, namely the spatial light modulator, can be realized by a method of controlling the orientation of liquid crystal through electrodes, the method needs to continuously load voltage and cannot realize a nonvolatile flat lens; regardless of the micro-nano processing technology or the liquid crystal curing, once the processing is finished, the surface structure cannot be changed, and the reconfigurability is not realized.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides a reconfigurable and nonvolatile flat lens based on a phase change material and a manufacturing method thereof, and reconfigurable and nonvolatile space optical field regulation and control are realized.
In order to solve the technical problems, the invention adopts the technical scheme that: a reconfigurable, non-volatile, flat lens based on phase change materials, wherein,
the optical lens comprises a medium substrate, wherein the medium substrate can transmit a light beam of a target waveband, and the target waveband is the working waveband of a flat lens;
the phase change material film is arranged on the surface of the medium substrate and is formed by depositing a phase change medium material; under the action of external excitation, the phase-change material contained in the phase-change material film can present different states corresponding to different phase states of the flat lens;
the phase change material film is arranged on the surface of the phase change material film, the cladding film has low absorption to a target waveband and a reconstruction waveband, and the reconstruction waveband is a femtosecond laser beam waveband of a reconstruction flat lens surface phase. The cladding film is used as a protective film to prevent the liquid phase flow from being uneven to influence the surface smoothness of the plate lens when the phase change medium film is converted from an amorphous state to a crystalline state.
The planar lens provided by the invention realizes reconfigurable and nonvolatile space optical field regulation and control by utilizing different phase change states of the phase change material film, and the planar lens is transparent in a target waveband, can realize phase regulation and control of a complete period, and realizes the effect of light beam convergence by specific surface phase regulation and control. Due to the characteristics of the phase-change material, and the matching of a proper medium substrate and a proper cladding material, the flat lens provided by the invention has the characteristics of low response time, high modulation efficiency and high transmittance of a target waveband; compared with the existing super-surface lens, the space optical field regulation and control technology based on the liquid crystal material and the reflective dynamic super-surface based on the phase change material, the flat lens provided by the invention has reconfigurable and nonvolatile properties and is a transmission element.
In the invention, the phase-change material film can realize reversible change from a crystalline state to an amorphous state under illumination or other excitation conditions. The phase change material film has a crystalline state with long-range order of atomic arrangement and high reflectivity, and an amorphous state with long-range disorder and lower reflectivity than the crystalline state. The amorphous state is formed when the phase change material film is heated to a temperature above the melting point Tm and quenched, and the crystalline state is formed when it is slowly cooled. In the invention, the phase-change material film is changed from the crystalline state to the amorphous state by laser irradiation with high power density, the irradiated part of the phase-change material film is melted, atoms form a random arrangement state through a liquid phase, heat is quickly diffused to the substrate of the phase-change material film for quenching because of short heating time, and the phase-change material film is cooled to below the glass transition temperature, so that the part of the phase-change material film is stabilized in the long-range disordered amorphous state. And the phase-change material film is slowly heated by the laser irradiation with low power density, and is transformed from an amorphous state to a crystalline state. The phase change degree of the phase change material at different positions on the surface of the flat lens is controlled by regulating the shape and the light intensity of the laser beam on the surface of the sample, and the surface phase of the phase change material is in specific periodic continuous change, so that the effect of the flat lens can be realized; the flat lens can maintain the existing state without external excitation. And the laser power of the reconstructed light beam can be regulated and controlled to regulate and control the reversible phase change between the crystalline state and the amorphous state, so that the reconfigurable flat lens is realized.
The surface phase distribution of the flat lens can be reconstructed through the femtosecond laser processing system, the wavelength of a femtosecond laser beam is in a reconstruction waveband, the reconstructed structure is nonvolatile due to the characteristics of the phase-change material, and the stable performance can be continuously maintained without continuously applying an electric field or an optical field after the reconstruction is finished.
In one embodiment, the phase change material thin film is formed by depositing a phase change medium material with low absorption in a target waveband and high absorption in a reconstruction waveband.
In one embodiment, the phase change material film has a continuously controllable and nonvolatile holding characteristic, and under the action of external excitation, the phase change material film can be continuously changed between an amorphous state and a crystalline state through excitation modulation.
In one embodiment, the phase of the surface of the flat lens presents a phase distribution of concentric circles, and the farther the relative circular distance r is, the smaller the phase period d is, the larger the diffraction angle theta is, and the phase period d continuously changes with r. The focal length f of the flat lens is r/tan theta.
The phase change degree of the phase change material at different positions on the surface of the flat lens is different, the phase of the surface of the flat lens presents specific periodic continuous change distribution, and for any position with a phase distribution period of d, the diffraction angle of a working waveband light beam after passing through satisfies sin theta-lambda/d, wherein theta is the diffraction angle, lambda is the wavelength of a target waveband, and d is the phase period of the light beam passing through position. By designing specific surface phase distribution, all light rays passing through the effective aperture generate different diffraction angles at different radial positions, and all light rays are just converged to the same position at the same time, so that the converging effect of the lens is realized.
In one embodiment, the dielectric substrate is a dielectric material with low absorption in a target waveband (the extinction coefficient k is less than 0.01); including quartz glass, crystalline and amorphous silicon, or silicon nitride.
In one embodiment, the thickness of the dielectric substrate is greater than the wavelength of the target wavelength band beam.
In one embodiment, the phase change material of the phase change material thin film comprises tellurium sulfide, germanium antimony tellurium, germanium arsenic sulfide, or germanium tellurium selenium.
In one embodiment, the cladding film comprises an aluminum oxide film, a silicon oxide film or a zirconium dioxide film.
In one embodiment, the external excitation signal is an excitation signal capable of inducing a phase change of the phase change material film, and the wavelength of the excitation signal is a femtosecond laser beam in a reconstruction band.
The invention also provides a manufacturing method of the reconfigurable nonvolatile flat lens based on the phase-change material, which comprises the following steps:
s1, cleaning: subjecting the medium substrate to ultrasound in an acetone solution; then, carrying out ultrasonic treatment on the medium substrate in an isopropanol solution; then, carrying out ultrasonic treatment on the medium substrate in an ultrapure water solution; finally, blowing the surface of the medium substrate by using a high-purity argon gas gun, and heating on a heating plate to obtain the medium substrate to be evaporated;
s2, performing direct current sputtering treatment on the medium substrate, and then evaporating and depositing a phase change material film on the surface of the medium substrate by using a thermal evaporation or magnetron sputtering method;
and S3, depositing a cladding film on the upper layer of the phase-change material film by adopting a magnetron sputtering or chemical vapor deposition method.
Compared with the prior art, the beneficial effects are: the reconfigurable and nonvolatile flat lens based on the phase change material and the manufacturing method thereof realize the reconfigurable and nonvolatile space optical field regulation and control by utilizing different phase change states of the phase change material film, and the flat lens is transparent in a target waveband, can realize the phase regulation and control of a complete period, and realizes the effect of light beam convergence by specific surface phase regulation and control. Due to the characteristics of the phase-change material, and the matching of a proper medium substrate and a proper cladding material, the flat lens provided by the invention has the characteristics of low response time, high modulation efficiency and high transmittance of a target waveband; compared with the existing super-surface lens, the space optical field regulation and control technology based on the liquid crystal material and the reflective dynamic super-surface based on the phase change material, the flat lens provided by the invention has reconfigurable and nonvolatile properties and is a transmission element.
Drawings
Fig. 1 is a schematic structural view of a flat lens of the present invention.
FIG. 2 is a schematic view of the beam convergence of the flat lens of the present invention.
Fig. 3 is a phase distribution diagram of the flat lens of the present invention.
FIG. 4 is an optical diagram of a reconstruction system in an embodiment of the invention.
Reference numerals: 1. a plate lens; 11. a dielectric substrate; 12. a phase change material film; 13. a cladding film; 2. a femtosecond laser light source; 3. an optical switch; 4. an electrodynamic laser power attenuator; 5. a Galilean telescope system; 6. a small hole; 7. a spatial light modulator; 8. a beam-shrinking system; 9. an objective lens; 10. a three-axis displacement platform.
Detailed Description
The drawings are for illustration purposes only and are not to be construed as limiting the invention; for the purpose of better illustrating the embodiments, certain features of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted. The positional relationships depicted in the drawings are for illustrative purposes only and are not to be construed as limiting the invention.
As shown in fig. 1, a reconfigurable, non-volatile flat lens 1 based on phase change materials, wherein,
the optical lens comprises a medium substrate 11, wherein the medium substrate 11 can transmit light beams of a target waveband, wherein the target waveband is an operating waveband of the flat lens 1 and comprises but is not limited to a visible waveband and a near infrared waveband;
a layer of phase-change material film 12 arranged on the surface of the medium substrate 11, wherein the phase-change material film 12 is formed by depositing a phase-change medium material; under the action of external excitation, the phase-change material contained in the phase-change material film 12 can present different states corresponding to different phase states of the flat lens 1; deposition methods for the phase change material film 12 include, but are not limited to, magnetron sputtering and vacuum evaporation;
the phase change material film 12 is arranged on the surface of the phase change material film 12, the cladding film 13 has low absorption to a target waveband and a reconstruction waveband, and the reconstruction waveband is a femtosecond laser beam waveband of a surface phase of the reconstruction flat lens 1 and is generally a visible light waveband. The clad film 13 serves as a protective film to prevent the liquid phase flow from being non-uniform when the phase change medium film is transformed from the amorphous state to the crystalline state, thereby preventing the surface flatness of the plate lens 1 from being affected.
In the present invention, the phase change material film 12 may be reversibly changed from a crystalline state to an amorphous state under illumination or other excitation conditions. The phase change material film 12 has a crystalline atomic arrangement with long-range order and high reflectivity, while an amorphous state is a long-range disorder with reflectivity lower than that of the crystalline state. The amorphous state is formed when the phase change material film 12 is heated to a temperature above the melting point Tm and quenched, and the crystalline state is formed when it is slowly cooled. In the present invention, the phase change material film 12 is changed from the crystalline state to the amorphous state by the laser irradiation of high power density, the irradiated portion of the phase change material film 12 is melted, the atoms form a random arrangement state through the liquid phase, the heat is rapidly diffused to the substrate of the phase change material film 12 due to the short heating time and is rapidly cooled to the glass transition temperature, and the portion of the phase change material film 12 is stabilized in the long-range random amorphous state. The phase change material thin film 12 is slowly heated by laser irradiation with a low power density to be changed from an amorphous state to a crystalline state. The phase change degree of the phase change material at different positions on the surface of the flat lens 1 is controlled by regulating the shape and the light intensity of the laser beam on the surface of the sample, and the surface phase of the phase change material is in specific periodic continuous change, so that the effect of the flat lens 1 can be realized; the flat lens 1 can maintain the existing state without external excitation. And the laser power of the reconstructed light beam can be regulated and controlled to regulate and control the reversible phase change between the crystalline state and the amorphous state, so that the reconfigurable flat lens 1 is realized.
The flat lens 1 provided by the invention can reconstruct the surface phase distribution through the femtosecond laser processing system, the wavelength of the femtosecond laser beam is in a reconstruction waveband, and due to the characteristics of the phase-change material, the reconstructed structure is nonvolatile, and the stable performance can be continuously maintained without continuously applying an electric field or an optical field after the reconstruction is finished.
In one embodiment, the phase change material film 12 is deposited from a phase change material that has low absorption in the target wavelength band and high absorption in the reconstruction wavelength band.
In one embodiment, the phase change material film 12 has a continuously controllable, non-volatile retention characteristic, and under an external stimulus, the phase change material film 12 can be continuously changed between the amorphous state and the crystalline state through the stimulus modulation.
In one embodiment, as shown in fig. 3, the phase distribution of the surface of the flat lens 1 is concentric, and the farther the relative circular distance r is, the smaller the phase period d is, the larger the diffraction angle θ is, and the phase period d continuously changes with r. The focal length f of the plate lens 1 is rtan θ.
The phase change degree of the phase change material at different positions on the surface of the flat lens 1 is different, the phase of the surface of the flat lens is in specific periodic continuous change distribution, and for any position with a phase distribution period d, the diffraction angle of a working waveband light beam after passing through the position satisfies sin theta lambda d, wherein theta is the diffraction angle, lambda is the wavelength of a target waveband, and d is the phase period of the light beam passing through the position. By designing specific surface phase distribution, all light rays passing through the effective aperture generate different diffraction angles at different radial positions, and all light rays are converged to the same position exactly at the same time, so that the lens convergence effect is realized.
In one embodiment, the dielectric substrate 11 is a dielectric material with low absorption in the target wavelength band; including quartz glass, crystalline and amorphous silicon, or silicon nitride.
In one embodiment, the thickness of the dielectric substrate 11 is greater than the wavelength of the target wavelength band.
In one embodiment, the phase change material of the phase change material film 12 includes tellurium sulfide, germanium antimony tellurium, germanium arsenic sulfide, or germanium tellurium selenium.
In one embodiment, the cladding film 13 comprises a silicon oxide film or a zirconium dioxide film.
In one embodiment, the external excitation signal is an excitation signal capable of inducing a phase change of the phase change material film 12, and the wavelength of the excitation signal is within the wavelength range of the reconstruction band.
In another embodiment, the present invention further provides a method for manufacturing a reconfigurable, nonvolatile flat lens 1 based on a phase change material, comprising the steps of:
s1, cleaning: selecting a medium substrate 11 which meets the design size, cleaning the surface and the back, and removing dust particles, organic impurities and inorganic impurities; the medium substrate 11 is subjected to ultrasonic treatment for 10 minutes in an acetone solution by using 99W power; then, carrying out ultrasonic treatment on the medium substrate 11 in an isopropanol solution for 10 minutes by using 99W power; then, carrying out ultrasonic treatment on the medium substrate 11 in an ultrapure water solution for 10 minutes by using 99W power; and finally, blowing the surface and the back of the substrate by using a high-purity argon gas gun, and heating the substrate on a heating plate for 5 minutes at 110 ℃ to obtain the medium substrate 11 to be evaporated.
S2, preparing the phase-change material before coating by adopting a direct-current sputtering method: placing a medium substrate 11 on a sample table of a vacuum coating machine and fixing the substrate by using a clamp; pumping the vacuum degree of the vacuum coating machine to 10-1 pa; using high-purity Ar gas as sputtering gas, setting the stable Ar gas flow as 100sccm, and adjusting the sputtering gas pressure to 0.5 pa-1 pa; setting the power of a direct current sputtering power supply to be 10-30W;
preparing the phase-change material film 12 by a thermal evaporation method: after the medium substrate 11 is subjected to sputtering treatment, the vacuum degree of a vacuum coating machine is pumped to 10-6 pa; the phase-change material target material glass is heated by heating the tantalum evaporation boat, the phase-change material film 12 is deposited at the evaporation speed of 1A/s, and the deposition rate and the film thickness are monitored in real time by a film thickness meter in the film coating machine. The prepared phase change material film 12 was subjected to composition testing using an energy dispersive X-ray spectrometer (EDS).
S3, depositing a cladding film 13 of 100-200nm on the phase change material film 12 by adopting a magnetron sputtering or chemical vapor deposition method.
In the present invention, the method of reconstructing the flat lens 1: the femtosecond laser beam is utilized to heat the surface of the film sample to promote the phase change of the film sample, and the specific phase distribution of the surface of the sample is realized by regulating and controlling the shape and the light intensity of the laser beam on the surface of the sample.
In the reconstruction system, as shown in fig. 4, a beam of femtosecond laser beam enters the optical path system in parallel, and the laser power is dynamically regulated and controlled through a high-speed optical switch 3 and an electric laser power attenuator 4; the femtosecond laser beam is expanded by using a Galileo telescope system 5, and the beam is spatially filtered by using a small hole 6 with the size of 30-150 microns to be expanded into a quasi-parallel beam with the diameter of 7-13 mm and Gaussian beam distribution. Adjusting a reflector to enable parallel light beams to pass through a light beam after being reflected by a spatial light modulator 7, compressing the diameter of the light beam to 3-6 mm through two lenses (beam-shrinking systems 8), and finally vertically driving the light beam into an objective lens 9 to realize focusing; the flat lens 1 to be reconstructed is placed on a working distance plane of an objective lens 9, the laser convergence position is changed through a triaxial displacement platform 10, and meanwhile, the laser power and the light field distribution are changed, so that the specific phase distribution of the surface of a sample is realized.
In the experiment, firstly, the light path is adjusted to enable the beam shape at the emergent position of the objective lens 9 to be optimal, and the light spot at the incident position of the objective lens 9 covers the entrance pupil of the objective lens 9 as much as possible; then fixing the sample on the working distance plane of the objective lens 9 by using a specific clamp; the spatial position and the pitching of the sample are adjusted through a five-axis manual displacement platform, so that the surface of the sample is parallel to the working distance plane of the objective lens 9 and is just below the objective lens 9; and finally, inputting a structure to be reconstructed in a control program, changing the light intensity, the light spot shape and the sample position of the femtosecond laser in real time, and completing the phase reconstruction after exposure.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (10)
1. A reconfigurable, non-volatile flat lens based on phase change materials,
the optical lens comprises a medium substrate (11), wherein the medium substrate (11) can transmit a light beam of a target waveband, and the target waveband is a working waveband of a flat lens (1);
the phase-change material thin film (12) is arranged on the surface of the medium substrate (11), and the phase-change material contained in the phase-change material thin film (12) can be in different states under the action of external excitation, and the phase-change material thin film corresponds to different phase states of the flat lens (1);
the phase change material is characterized by comprising a layer of cladding film (13) arranged on the surface of the phase change material film (12), wherein the cladding film (13) has low absorption to a target waveband and a reconstruction waveband, and the reconstruction waveband is the waveband of a femtosecond laser beam for reconstructing the surface phase of the flat lens (1).
2. The reconfigurable, non-volatile, phase change material-based slab lens of claim 1, wherein the phase change material thin film (12) is deposited from a phase change material that has low absorption in the target wavelength band and high absorption in the reconstruction wavelength band.
3. A reconfigurable, non-volatile, slab lens based on phase change materials according to claim 2, characterized in that the phase change material film (12) has continuously controllable, non-volatile retention characteristics, and under external actuation, the phase change material film (12) can be continuously changed between the amorphous and crystalline states by actuation modulation.
4. A reconfigurable, non-volatile, slab lens based on phase change materials as claimed in claim 3, characterized in that the slab lens (1) surface phase exhibits a concentric ring phase distribution, the farther the relative circular distance r, the smaller the phase period d, the larger the diffraction angle θ, and the phase period d varies continuously with r.
5. The reconfigurable, non-volatile, flat-panel lens based on phase change materials according to any of claims 1 to 4, characterized in that the dielectric substrate (11) is a dielectric material with low absorption in the target wavelength band; including quartz glass, crystalline and amorphous silicon, or silicon nitride.
6. The reconfigurable, non-volatile, flat-panel lens based on phase change materials as claimed in claim 5, wherein the dielectric substrate (11) has a thickness value greater than the wavelength of the optical beam in the target wavelength band.
7. The reconfigurable, non-volatile, phase change material-based slab lens of claim 5, wherein the phase change material of the phase change material film (12) comprises tellurium sulfide, germanium antimony tellurium, germanium arsenic sulfide, or germanium tellurium selenium.
8. The reconfigurable, non-volatile, phase-change-material-based slab lens according to claim 7, wherein the cladding film (13) comprises an aluminum oxide film, a silicon oxide film, or a zirconium dioxide film.
9. The reconfigurable, non-volatile, phase change material-based slab lens of claim 8, wherein the external excitation signal is an excitation signal that induces a phase change in the phase change material film (12), and the excitation signal is a femtosecond laser beam having a wavelength within a reconstruction band.
10. A manufacturing method of a reconfigurable nonvolatile flat lens based on a phase change material is characterized by comprising the following steps:
s1, cleaning: carrying out ultrasonic treatment on a medium substrate (11) in an acetone solution; then, carrying out ultrasonic treatment on the medium substrate (11) in an isopropanol solution; then, carrying out ultrasonic treatment on the medium substrate (11) in an ultrapure water solution; finally, blowing the surface of the medium substrate (11) by using a high-purity argon gas gun, and heating on a heating plate to obtain the medium substrate (11) to be evaporated;
s2, performing direct current sputtering treatment on the medium substrate (11), and then evaporating and depositing a phase-change material film (12) on the surface of the medium substrate (11) by using a thermal evaporation or magnetron sputtering method;
s3, depositing a cladding film (13) on the upper layer of the phase-change material film (12) by adopting a magnetron sputtering or chemical vapor deposition method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111212287.0A CN113848657A (en) | 2021-10-18 | 2021-10-18 | Reconfigurable and nonvolatile flat lens based on phase change material and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111212287.0A CN113848657A (en) | 2021-10-18 | 2021-10-18 | Reconfigurable and nonvolatile flat lens based on phase change material and manufacturing method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
CN113848657A true CN113848657A (en) | 2021-12-28 |
Family
ID=78978751
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202111212287.0A Pending CN113848657A (en) | 2021-10-18 | 2021-10-18 | Reconfigurable and nonvolatile flat lens based on phase change material and manufacturing method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN113848657A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114815317A (en) * | 2022-06-28 | 2022-07-29 | 中山大学 | Imaging phase regulation and control device and method for phase change material film |
CN114815026A (en) * | 2022-06-30 | 2022-07-29 | 中山大学 | Grating with adjustable period and preparation method thereof |
WO2024001455A1 (en) * | 2022-06-28 | 2024-01-04 | 中山大学 | Reconfigurable photonic integrated chip based on phase-change material thin film, and processing method therefor |
CN117381146A (en) * | 2023-12-11 | 2024-01-12 | 中山大学 | Laser processing method based on chalcogenide material and integrated photon device |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104898191A (en) * | 2015-05-20 | 2015-09-09 | 北京空间机电研究所 | Middle-infrared band ultrathin slab lens based on meta-material |
US20160377886A1 (en) * | 2015-06-23 | 2016-12-29 | Indizen Optical Technologies, S.L. | Rewritable lens and method of manufacturing |
US20180351092A1 (en) * | 2017-06-01 | 2018-12-06 | Baden-Wurttemberg Stiftung Ggmbh | Device for switchably influencing electromagnetic radiation, and method for obtaining such a device |
CN109212861A (en) * | 2018-11-16 | 2019-01-15 | 京东方科技集团股份有限公司 | Lens subassembly and its control method, display device |
CN112736197A (en) * | 2020-12-29 | 2021-04-30 | 西北工业大学 | Method for improving phase-change material |
CN213338084U (en) * | 2020-09-29 | 2021-06-01 | 深圳市麓邦技术有限公司 | Flat lens element |
-
2021
- 2021-10-18 CN CN202111212287.0A patent/CN113848657A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104898191A (en) * | 2015-05-20 | 2015-09-09 | 北京空间机电研究所 | Middle-infrared band ultrathin slab lens based on meta-material |
US20160377886A1 (en) * | 2015-06-23 | 2016-12-29 | Indizen Optical Technologies, S.L. | Rewritable lens and method of manufacturing |
US20180351092A1 (en) * | 2017-06-01 | 2018-12-06 | Baden-Wurttemberg Stiftung Ggmbh | Device for switchably influencing electromagnetic radiation, and method for obtaining such a device |
CN109212861A (en) * | 2018-11-16 | 2019-01-15 | 京东方科技集团股份有限公司 | Lens subassembly and its control method, display device |
CN213338084U (en) * | 2020-09-29 | 2021-06-01 | 深圳市麓邦技术有限公司 | Flat lens element |
CN112736197A (en) * | 2020-12-29 | 2021-04-30 | 西北工业大学 | Method for improving phase-change material |
Non-Patent Citations (1)
Title |
---|
QIAN WANG,等: "Optically reconfigurable metasurfaces and photonic devices based on phase change materials", 《NATURE PHOTONICS》, no. 10, pages 60 - 65 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114815317A (en) * | 2022-06-28 | 2022-07-29 | 中山大学 | Imaging phase regulation and control device and method for phase change material film |
WO2024001455A1 (en) * | 2022-06-28 | 2024-01-04 | 中山大学 | Reconfigurable photonic integrated chip based on phase-change material thin film, and processing method therefor |
CN114815026A (en) * | 2022-06-30 | 2022-07-29 | 中山大学 | Grating with adjustable period and preparation method thereof |
CN117381146A (en) * | 2023-12-11 | 2024-01-12 | 中山大学 | Laser processing method based on chalcogenide material and integrated photon device |
CN117381146B (en) * | 2023-12-11 | 2024-04-12 | 中山大学 | Laser processing method based on chalcogenide material and integrated photon device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN113848657A (en) | Reconfigurable and nonvolatile flat lens based on phase change material and manufacturing method thereof | |
US10132965B2 (en) | Optical apparatus and method of forming a gradient index device | |
CN108015410B (en) | Amorphous Ge based on femtosecond laser inductionmSbnTekMethod for preparing crystalline nano structure by thin film | |
US6924457B2 (en) | Laser processing method to a class substrate and an optical diffraction element obtained thereby, and a method for manufacturing optical elements | |
CN109434289B (en) | Femtosecond laser manufacturing method for tunable phase-change nano-structure super surface | |
US5910256A (en) | Method for manufacturing a diffraction type optical element | |
JP6469717B2 (en) | Variable photothermal lens | |
CN114815009B (en) | Method for regulating focal length range of zoom superlens by introducing additional phase | |
CN114743714A (en) | Target control device, system and method | |
US11163207B2 (en) | Chalcogenide glass waveguides for refractive non-mechanical beam steerer | |
Lazarenko et al. | Low power reconfigurable multilevel nanophotonic devices based on Sn-doped Ge2Sb2Te5 thin films | |
CN114355632A (en) | Phase-change-material-based flat lens with customized aberration and manufacturing method thereof | |
US20190169739A1 (en) | An interference coating or its part consisting layers with different porosity | |
US20210304792A1 (en) | Optical memory devices using a silicon wire grid polarizer and methods of making and using | |
EP2000558B1 (en) | Method and apparatus for manufacturing purely refractive optical structures | |
CN114815317A (en) | Imaging phase regulation and control device and method for phase change material film | |
CN113340430B (en) | Spatially-resolved heat radiation super-surface device based on phase-change material and preparation method and device thereof | |
CN115598741A (en) | Optical phase change material-based multi-trap optical tweezer superlens | |
CN117381146B (en) | Laser processing method based on chalcogenide material and integrated photon device | |
Grunwald et al. | Fabrication of thin-film microlens arrays by mask-shaded vacuum deposition | |
JP3016806B2 (en) | Method and apparatus for forming micro optical element | |
Heßler et al. | Infrared Programmable Nanophotonics Based on In3SbTe2 | |
KR20170099176A (en) | Pulsed laser deposition system for functionally graded antireflection coatings and deposition method using the same | |
CN117248269A (en) | Transmission type main baffle plate for protecting substrate on molecular beam epitaxy equipment | |
CN115971646A (en) | Method for preparing phase-change material super surface by utilizing ultrafast laser and optical path system |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20211228 |
|
RJ01 | Rejection of invention patent application after publication |