CN113340337A - Measuring apparatus, substrate processing system, and measuring method - Google Patents

Measuring apparatus, substrate processing system, and measuring method Download PDF

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Publication number
CN113340337A
CN113340337A CN202110200735.9A CN202110200735A CN113340337A CN 113340337 A CN113340337 A CN 113340337A CN 202110200735 A CN202110200735 A CN 202110200735A CN 113340337 A CN113340337 A CN 113340337A
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China
Prior art keywords
unit
substrate
pattern
imaging
imaging unit
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CN202110200735.9A
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Chinese (zh)
Inventor
藤原慎
尾上幸太朗
田中茂喜
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN113340337A publication Critical patent/CN113340337A/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D21/00—Measuring or testing not otherwise provided for
    • G01D21/02—Measuring two or more variables by means not covered by a single other subclass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D11/00—Component parts of measuring arrangements not specially adapted for a specific variable
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
    • G01K1/02—Means for indicating or recording specially adapted for thermometers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/20—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring contours or curvatures, e.g. determining profile
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

The invention provides a technique capable of measuring a pattern shape with high accuracy for a long period of time. A measuring device according to one embodiment of the present invention includes a conveying unit, an imaging unit, a camera height measuring unit, a temperature detecting unit, and a control unit. The conveying part conveys the substrate with the pattern. The imaging part is arranged above the conveying part and images the pattern of the substrate loaded on the conveying part. The camera height measuring section is disposed in the vicinity of the imaging section and measures a height from a pattern surface on which the pattern substrate is formed to a lens of the imaging section. The temperature detection unit detects temperatures of a plurality of portions around the imaging unit. The control unit controls each unit. The control unit corrects the height from the pattern surface of the substrate to the lens of the imaging unit, which is measured by the camera height measuring unit, based on the temperatures of the plurality of portions around the imaging unit detected by the temperature detecting unit.

Description

Measuring apparatus, substrate processing system, and measuring method
Technical Field
Embodiments of the present invention relate to a measurement apparatus, a substrate processing system, and a measurement method.
Background
Conventionally, there is known a technique of imaging a substrate on which a pattern is formed by an imaging device and measuring the shape of the pattern based on image information of the pattern obtained by the imaging (see patent document 1).
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2015-72257
Disclosure of Invention
Technical problem to be solved by the invention
The invention provides a technique capable of measuring a pattern shape with high accuracy over a long period of time.
Means for solving the problems
A measuring device according to one embodiment of the present invention includes a conveying unit, an imaging unit, a camera height measuring unit, a temperature detecting unit, and a control unit. The conveying part conveys the substrate with the pattern. The imaging part is arranged above the conveying part and images the pattern of the substrate loaded on the conveying part. The camera height measuring section is disposed in the vicinity of the imaging section and measures a height from a pattern surface of the substrate on which the pattern is formed to a lens of the imaging section. The temperature detection unit detects temperatures of a plurality of portions around the imaging unit. The control unit controls each unit. The control unit corrects the height from the pattern surface of the substrate to the lens of the imaging unit, which is measured by the camera height measuring unit, based on the temperatures of the plurality of portions around the imaging unit, which are detected by the temperature detecting unit.
Effects of the invention
According to the present invention, the pattern shape can be measured with high accuracy over a long period of time.
Drawings
Fig. 1 is a schematic explanatory view showing a structure of a substrate processing system according to an embodiment.
Fig. 2 is a schematic side view showing a structure of a line width measuring device according to an embodiment.
Fig. 3 is a schematic perspective view showing a structure of a line width measuring device according to an embodiment.
Fig. 4 is a block diagram of a measurement control device according to an embodiment.
Fig. 5 is a schematic enlarged view of a substrate for explaining the storage of pattern shape and position information.
Fig. 6 is a schematic side view showing the structure of the support portion of the embodiment.
Fig. 7 is a schematic side view showing the structure of the support portion of the embodiment.
Fig. 8 is a flowchart showing a process flow of the line width measurement process according to the embodiment.
Fig. 9 is a flowchart showing a processing flow of the imaging processing according to the embodiment.
Fig. 10 is a flowchart showing a processing flow of learning data acquisition processing according to the embodiment.
Fig. 11 is a diagram for explaining the shooting start time in the shooting process according to the embodiment.
Fig. 12 is a diagram showing the number of errors in the imaging process in the case where the correction process is performed based on the temperatures of a plurality of portions according to the embodiment.
Fig. 13 is a flowchart showing a processing flow of the imaging processing according to the modification of the embodiment.
Fig. 14 is a diagram for explaining the shooting start time in the shooting process according to the modified example of the embodiment.
Detailed Description
Embodiments of a measuring apparatus, a substrate processing system, and a measuring method according to the present invention will be described in detail below with reference to the accompanying drawings. The present invention is not limited to the embodiments described below. Note that the drawings are schematic, and the dimensional relationship, the proportion, and the like of each element may differ from the actual ones. The drawings may include portions having different dimensional relationships and ratios from each other.
In the related art, there is known a technique of photographing a substrate on which a pattern is formed with a photographing device and measuring the shape of the pattern based on image information of the pattern obtained by the photographing. However, in the prior art, there is room for further improvement in stably measuring the shape of a pattern over a long period of time.
Therefore, it is desirable to realize a technique capable of measuring a pattern shape with high accuracy over a long period of time while overcoming the above-described problems.
< Structure of substrate processing System >
First, a schematic configuration of a substrate processing system 1 according to an embodiment will be described with reference to fig. 1. Fig. 1 is a schematic explanatory view showing a structure of a substrate processing system 1 according to an embodiment.
The substrate processing system 1 of the embodiment shown in fig. 1 is a unit that performs a process of forming a pattern by, for example, a photolithography process on a substrate G to be processed (hereinafter referred to as a "substrate G". though not shown in fig. 1). The substrate processing system 1 may form a pattern by a process other than the photolithography process.
The substrate processing system 1 includes a resist coating apparatus 11, a reduced-pressure drying apparatus 12, a pre-baking apparatus 13, a cooling apparatus 14, an exposure apparatus 15, a partial exposure apparatus 16, a developing apparatus 17, and a line width measuring apparatus 18. The line width measuring device 18 is an example of a measuring device.
The devices 11 to 18 are integrally connected in the X-axis direction in the order of the devices 11 to 18. The arrangement of the devices 11 to 18 is not limited to this. The devices 11-18 may be arranged in a plurality of rows, for example, 2 rows parallel to the X-axis.
The devices 11 to 18 convey the substrate G in the X-axis forward direction by the conveying mechanism. The conveying mechanism is, for example, a conveying mechanism such as a roller conveyor, a belt conveyor, or a chain conveyor.
The conveying mechanism may be a floating type conveying mechanism. The floating type transport mechanism supports, for example, an end portion of the substrate G from below, blows compressed air to the substrate G from below to horizontally hold the substrate G, and moves the substrate G.
The substrate G is conveyed by the conveying mechanism and passes through the devices 11-18 to form a pattern. In this manner, in the substrate processing system 1, the photolithography process is performed in a pipeline manner in each of the apparatuses 11 to 18. In the substrate processing system 1, the substrate G is sequentially conveyed by the conveying mechanism at predetermined time intervals or at predetermined intervals.
The resist coating apparatus 11 coats a substrate G with a resist having photosensitivity. That is, the resist coating apparatus 11 forms a resist film on the substrate G. As the resist, either a positive resist or a negative resist can be used.
The decompression drying apparatus 12 disposes the substrate G in a decompressed chamber, and dries a resist film formed on the substrate G. The prebaking device (prebaking device) 13 performs a heat treatment on the substrate G to dry the solvent of the resist film, thereby fixing the resist film to the substrate G. The cooling device 14 cools the substrate G heated by the pre-baking device 13 to a predetermined temperature.
The exposure device 15 exposes the resist film formed on the substrate G in a predetermined pattern shape using a mask. The local exposure device 16 locally exposes the resist film in order to suppress, for example, occurrence of unevenness in a pattern formed on the substrate G.
That is, for example, if the line width of the pattern formed on the substrate G is different from a desired line width, the local exposure device 16 locally exposes a portion where the line width of the pattern is different from the desired line width, thereby correcting the line width of the pattern.
The developing device 17 immerses the substrate G exposed by the exposure device 15 and the local exposure device 16 in a developing solution to perform a developing process, thereby forming a pattern on the substrate G. The line width measuring device 18 measures the line width of the pattern formed on the substrate G by the developing process in the developing device 17.
In the above description, the line width of the pattern is used as the pattern to be measured, but this is merely an example and is not limitative. That is, the pattern may be any portion as long as it is related to the shape of the pattern. Specifically, the pattern to be measured may be a portion related to the shape of the pattern, such as the size such as the length and thickness of the pattern, the curvature, the layout, or the defect or deformation of the pattern.
Substantially of < line width measuring device
Next, the line width measuring device 18 according to the embodiment will be described with reference to fig. 2 to 5. Fig. 2 is a schematic side view showing a structure of the line width measuring device 18 of the embodiment, and fig. 3 is a schematic perspective view showing a structure of the line width measuring device 18 of the embodiment.
In addition, as shown in fig. 2 and 3, a Y-axis direction and a Z-axis direction orthogonal to the X-axis direction are defined below, and the Z-axis normal direction is set as a vertical upward direction. Note that a direction including the X axis and the Y axis is a horizontal direction.
As shown in fig. 2, the line width measuring device 18 includes a conveyance Unit 20, an imaging Unit 30, a movement Unit 40, a measurement control device 50 (see fig. 3), an FFU (Fan Filter Unit) 60, and a temperature detection Unit 70 (see fig. 4).
The conveying unit 20 is a part of the conveying mechanism of the substrate processing system 1, and is, for example, a roller conveyor. The conveying section 20 conveys the substrate G placed on the rollers 21 in the horizontal direction, specifically, the forward direction of the X axis by rotating the plurality of rollers 21. Further, in fig. 3, the roller 21 is shown in perspective.
The transport unit 20 transports the substrate G sent from the developing device 17 disposed at the front stage of the line width measuring device 18 in the substrate processing system 1. The operation of the conveying section 20, specifically, the rotation operation of the roller 21 is controlled by the measurement control device 50.
In the conveying section 20, a plurality of (for example, 4) substrate position detecting sections 22 indicated by broken lines in fig. 3 are arranged near the conveying surface on which the substrate G is conveyed. When the substrate G is positioned above, the substrate position detecting unit 22 outputs a detection signal to the measurement control device 50. As the substrate position detecting unit 22, for example, an optical load sensor is used.
The substrate position detecting unit 22 is disposed below the substrate G when the substrate G is placed at a predetermined position. The predetermined position is a position where the pattern of the substrate G can be imaged by the imaging section 30. The number of the substrate position detection units 22 may be 3 or less, or may be 5 or more.
The imaging unit 30 is disposed above the transport unit 20 in the Z-axis direction, and images the pattern of the substrate G placed on the transport unit 20 from above. As the imaging unit 30, for example, a CCD (Charge Coupled Device) camera, a CMOS (Complementary Metal Oxide Semiconductor) camera, or the like can be used.
Information of the image captured by the imaging unit 30 (hereinafter referred to as "image information") is input to the measurement control device 50. The imaging unit 30 starts imaging based on a signal output from the measurement control device 50, and performs imaging.
As shown in fig. 3, a camera height measuring unit 31 is provided near the imaging unit 30. The camera height measuring unit 31 measures a height H (see fig. 6) in the Z-axis direction from a pattern surface (upper surface) Ga on which a pattern is formed in the substrate G to a lens 30a (see fig. 6) of the imaging unit 30.
The measurement result of the camera height measuring section 31 is input to the measurement control device 50 for adjusting the height of the imaging section 30. Further, as the camera height measuring section 31, for example, a laser displacement meter can be used.
The moving unit 40 moves the imaging unit 30 in a direction (X-Y axis direction) horizontal to the pattern surface Ga of the substrate G or in a direction (Z direction) vertical thereto. Specifically, the moving unit 40 includes a rail unit 41, a sliding unit 42, and a connecting unit 43.
The guide rail portions 41 are disposed on both ends of the conveying portion 20 in the Y axis direction, and extend in the X axis direction. The slide portion 42 is slidably (slidably) coupled to each guide rail portion 41. That is, the slide portion 42 moves linearly in the X-axis direction along the rail portion 41.
The connection portion 43 is arranged above the substrate G to connect the slide portions 42 to each other. The imaging unit 30 and the camera height measuring unit 31 are coupled to the coupling unit 43 via a support unit 44 so as to be movable in the Y-axis and Z-axis directions.
The imaging unit 30 and the support unit 44 are provided with a temperature detection unit 70 (see fig. 4) for detecting temperatures of a plurality of portions of the imaging unit 30 and the support unit 44. Further, details of the support portion 44 and the temperature detection portion 70 will be described later.
Although not shown, the moving unit 40 further includes: a drive source that moves the slide portion 42 in the X-axis direction with respect to the rail portion 41; and a drive source for moving the imaging unit 30 and the like in the Y-axis direction and the Z-axis direction with respect to the connection unit 43.
As the drive source, for example, a motor can be used. Thus, for example, the measurement control device 50 can move the imaging unit 30 in 3 directions, i.e., the X, Y, Z-axis direction, with respect to the substrate G by controlling the driving source of the moving unit 40.
As shown in fig. 2, the FFU60 is an air supply unit that is provided on the top surface 18b of the chamber 18a that houses the transport unit 20 and the like and supplies clean air to the substrate G.
Next, the configuration of the measurement control device 50 will be described with reference to fig. 4. Fig. 4 is a block diagram of the measurement control device 50 of the embodiment. The measurement control device 50 is a computer having a control unit 51 and a storage unit 52.
The control unit 51 includes a correction unit 51a, and the storage unit 52 includes learning data 52 a. The details of the above-described parts will be described later. The measurement control device 50 is communicably connected to the conveying unit 20, the substrate position detection unit 22, the imaging unit 30, the camera height measurement unit 31, the moving unit 40, the temperature detection unit 70, and the like.
A program for controlling the line width measurement process is stored in the storage unit 52. The control unit 51 reads and executes a program stored in the storage unit 52 to control the operation of the line width measuring device 18.
The program may be recorded in a computer-readable storage medium, and installed from the storage medium to the storage unit 52 of the measurement control device 50. Examples of the computer-readable storage medium include a Hard Disk (HD), a Compact Disc (CD), a magneto-optical disk (MO), a flash memory, and a memory card.
The storage section 52 also stores in advance the pattern shape of the substrate G (hereinafter referred to as "stored pattern shape") and positional information of the pattern to be measured in the substrate G. For example, the pattern shape is measured at a plurality of positions with respect to the substrate G. Fig. 5 is a schematic enlarged view of the substrate G for explaining the storage of pattern shape and position information.
Here, a case where the line width of the pattern P indicated by reference symbol a in fig. 5 among a plurality of patterns formed on the substrate G is to be measured will be described as an example. In fig. 5, the patterns are hatched for easy understanding.
In the vicinity of the pattern P to be measured, as shown by the dotted line enclosure, there is a pattern B which can be a shape of a mark for the pattern P. The storage unit 52 stores the shape of the pattern B as "stored pattern shape B" in advance. The stored pattern shape B is used to determine whether or not the image information contains a pattern P to be measured in the line width measurement processing, which will be described later.
The stored pattern shape B is set for each position of the pattern to be measured (referred to as a "measurement point") and stored in the storage unit 52. However, for example, when the memory pattern shape B has the same shape at 2 or more measurement points, the memory pattern shape B may be shared by 2 or more measurement points.
The position information is, for example, pixel coordinate information indicating a relative position of a measurement point corresponding to a pattern matching the stored pattern shape B in the captured image. Specifically, the storage pattern shape B has an origin O as shown in fig. 5, and the pixel coordinate information includes a start point position XY1 and an end point position XY2 of the measurement point with respect to the origin O.
Specifically, as the starting position XY1, the lower end position of one of the patterns P to be measured (the upper pattern P in fig. 5) is set, and as the ending position XY2, the upper end position of the other of the patterns P to be measured (the lower pattern P in fig. 5) is set.
Further, the distance between the above-mentioned starting position XY1 and ending position XY2 is measured as "line width a". The measurement of the line width a will be described later. Further, the information of the start position XY1 and the end position XY2 described above is represented by X, Y coordinates of the pixels of the captured image.
In addition, the measurement control device 50 feeds back data indicating the line width of the pattern measured by the line width measurement processing. The local exposure device 16 compares the measured line width of the pattern with a desired line width, calculates the amount of deviation when there is a deviation, and corrects the illuminance of exposure, the position of local exposure in the substrate G, and the like based on the calculated amount of deviation.
Thus, the substrate G conveyed to the local exposure device 16 after correction can be locally exposed at the corrected illuminance or position of the substrate G, and the line width of the pattern of the substrate G can be corrected to a desired line width.
< Structure of support part >
Next, the supporting portion 44 of the embodiment will be described with reference to fig. 6 and 7. Fig. 6 and 7 are schematic side views showing the structure of the support portion 44 of the embodiment, and are schematic side views when viewed from different directions. In fig. 6, illustration of the motor 104 and the table 105 is omitted.
The supporting portion 44 of the embodiment movably supports the imaging portion 30 and the camera height measuring portion 31, respectively. As shown in fig. 7, the support portion 44 includes a 1 st mounting plate 101, a 2 nd mounting plate 102, a 3 rd mounting plate 103, a motor 104, and a table 105.
The 1 st mount plate 101 supports the camera height measuring unit 31 via the 2 nd mount plate 102, and supports the imaging unit 30 via the 3 rd mount plate 103. As shown in fig. 6, the 2 nd mount plate 102 is supported to be manually movable in the vertical direction with respect to the 1 st mount plate 101. Further, the 3 rd mount plate 103 is supported to be manually movable in the horizontal direction with respect to the 1 st mount plate 101.
Thus, in the embodiment, the camera height measuring unit 31 is manually movable in the vertical direction and the horizontal direction relative to the imaging unit 30, and therefore, the optical axis adjustment work at the time of manufacturing can be easily performed.
The camera height measuring unit 31 supported by the 2 nd mounting plate 102 can measure the height H from the pattern surface Ga of the substrate G to the lens 30a of the imaging unit 30, for example, by using light reflected on the pattern surface Ga of the substrate G.
The imaging unit 30 supported by the 3 rd mounting plate 103 includes a lens 30a, a lens barrel 30b, and a camera 30 c. As shown in fig. 7, the 3 rd mounting plate 103 supports the lens barrel 30b of the photographing section 30.
The 1 st mounting plate 101 is supported by a coupling portion 43 also shown in fig. 3 via a table 105. The stage 105 can move the 1 st mounting plate 101 (i.e., the imaging unit 30 and the camera height measuring unit 31) in the vertical direction with respect to the connecting unit 43 by using the motor 104 mounted adjacent thereto as a driving source. The operation of the motor 104 can be controlled by the control unit 51 (see fig. 4).
In the embodiment, the temperature detection unit 70 (see fig. 4) detects the temperatures of the 1 st mounting plate 101, the 2 nd mounting plate 102, the motor 104, and the lens barrel 30b of the imaging unit 30. That is, in the embodiment, the temperature detection unit 70 detects the temperatures of a plurality of portions around the imaging unit 30 (the imaging unit 30 and the support unit 44).
< processing of line width measuring device >
Next, the specific contents of the line width measurement process performed by the line width measurement device 18 will be described with reference to fig. 8. Fig. 8 is a flowchart showing a process flow of the line width measurement process according to the embodiment. In the line width measuring device 18, each processing flow shown in fig. 8 is executed under the control of the control unit 51 of the measurement control device 50.
First, the controller 51 controls the operation of the transport unit 20 to transport the substrate G subjected to the development process (step S1). Next, the control section 51 determines whether or not the substrate G is at (placed on) a predetermined position based on the detection signal output from the substrate position detecting section 22 (step S2).
When it is determined that the substrate G is not (not) placed at the predetermined position (No in step S2), the control unit 51 ends the process in this manner. On the other hand, when the substrate G is determined to be at (placed on) the predetermined position (Yes in step S2), the control unit 51 stops the operation of the conveying unit 20 to stop the substrate G (step S3).
Next, the control section 51 determines the position of the measurement point of the pattern on the substrate G, specifically, the measurement point to be measured this time (step S4). Then, the control unit 51 controls the operation of the moving unit 40 so that the imaging unit 30 moves above the determined measurement point (step S5).
Specifically, the control unit 51 moves the imaging unit 30 in the horizontal direction, and moves the imaging unit 30 above the measurement point. The control unit 51 may measure the distance between the imaging unit 30 and the substrate G, and move the imaging unit 30 in the horizontal direction while moving the imaging unit 30 in the Z direction so that the measured distance is within a predetermined range set in advance.
That is, the control unit 51 may move the imaging unit 30 above the measurement point while moving the imaging unit 30 in the Z direction so as to follow the curve of the substrate G.
Next, the control unit 51 adjusts the height H of the imaging unit 30 in the Z-axis direction (step S6). Specifically, the control unit 51 controls the operation of the moving unit 40 based on the measurement result of the camera height measuring unit 31 after a predetermined waiting time has elapsed since the imaging unit 30 moved to above the measurement point.
That is, the control unit 51 adjusts the height H in the Z-axis direction from the substrate G after a predetermined standby time has elapsed since the substrate G moved to the substrate imaging position in the horizontal direction. The predetermined standby time is a preset time, and is a time during which the horizontal vibration of the imaging unit 30 stops.
The control unit 51 controls the movement of the moving unit 40 so that the height H from the pattern surface Ga of the substrate G to the lens 30a of the imaging unit 30 becomes the focal distance (focusing distance) of the imaging unit 30. The focusing distance is a distance at which the image capturing unit 30 captures an image with minimal fluctuation.
More specifically, the control unit 51 first measures the height Ha in the Z-axis direction from the pattern surface Ga of the substrate G to the lens 30a of the imaging unit 30 based on the imaging distance at the time of completion of focusing by the imaging unit 30 using the imaging unit 30.
That is, the control unit 51 first measures the exact height Ha in the Z-axis direction from the pattern surface Ga of the substrate G to the lens 30a of the imaging unit 30 using the imaging unit 30. Then, the control section 51 stores the information on the above-described accurate height Ha in the storage section 52 as temporary information.
Next, the control section 51 measures the height H in the Z-axis direction from the substrate G to the imaging section 30a plurality of times using the camera height measuring section 31. Then, the control section 51 calculates the amplitude of the vibrating substrate G based on the obtained measurement result. Then, the control unit 51 calculates a height Hb from the pattern surface Ga of the substrate G to the lens 30a of the imaging unit 30 based on the calculated central value (median) of the amplitude.
Thus, the measurement control device 50 can determine the deviation D between the accurate height Ha in the Z-axis direction and the height Hb that is simply measured by the camera height measuring unit 31. Therefore, in the embodiment, the measurement value of the height H can be corrected based on the deviation amount D so that the height H measured by the camera height measuring unit 31 thereafter becomes the focal distance of the imaging unit 30.
Further, since the deviation amount D evaluated in the above description does not change even if the substrate G changes, the evaluation of the height Ha and the deviation amount D in step S6 can be omitted in the processing of the second and subsequent substrates G.
Then, the control section 51 controls the operation of the moving section 40 based on the calculated deviation amount D so that the height H from the pattern surface Ga of the substrate G to the lens 30a of the imaging section 30 becomes the focusing distance of the imaging section 30.
Thus, even when the substrate G vibrates, a focused image can be easily captured in a capturing process described later. In the above description, the central value of the amplitude is used, but the amplitude is not limited to this, and for example, an arithmetic mean value, a mode, or the like may be used.
Next, in step S6 described here, the control unit 51 determines whether or not the number of times the pattern is imaged by the imaging unit 30 is equal to or greater than a predetermined number of times (step S7). The predetermined number of times is set to an integer of 2 or more, for example.
When determining that the number of times of image capturing is less than the predetermined number of times (no at step S7), the control unit 51 performs image capturing processing (step S8). Details of the above-described shooting processing will be described later.
After the above-described imaging process, the control unit 51 performs a pattern search process (step S9). In the pattern search processing, for example, a correlation value between a pattern shape included in the image information (hereinafter referred to as "image pattern shape") and the stored pattern shape B stored in the storage unit 52 is calculated. Further, the correlation value is a value representing the similarity of the image pattern shape to the stored pattern shape B.
Next, the control unit 51 determines whether or not the calculated correlation value is equal to or greater than a predetermined correlation value (step S10). Here, when the correlation value is smaller than the predetermined correlation value, the control unit 51 determines that the image information does not include a pattern matching the stored pattern shape B, and as a result, does not include the pattern P to be measured.
That is, the pattern search process is a process of determining whether or not the position of the imaging unit 30 is deviated from the pattern P (measurement point) to be measured. Therefore, when the correlation value is smaller than the predetermined correlation value (no at step S10), the control unit 51 determines that the image information does not include the pattern P to be measured, and the imaging unit 30 is located at a position different from the measurement point, thereby adjusting the position of the imaging unit 30 (step S11).
The control unit 51 moves the imaging unit 30 in the horizontal direction, for example. Further, the control unit 51 may reduce the magnification of the lens 30a of the imaging unit 30, enlarge the camera field of view, and move the imaging unit 30 to the measurement point based on the image information from the enlarged camera field of view.
After adjusting the position of the imaging unit 30, the control unit 51 returns to the process of step S8 (imaging process).
As described above, in the case where the correlation value is smaller than the predetermined correlation value, the imaging section 30 is caused to perform imaging of the pattern of the substrate G again, so that the control section 51 can prevent erroneous measurement of the line width other than the line width a of the pattern P to be measured.
On the other hand, when the correlation value is equal to or greater than the predetermined correlation value, the control unit 51 determines that the image information includes a pattern matching the stored pattern shape B and includes the pattern P to be measured.
That is, when the correlation value is equal to or greater than the predetermined correlation value (yes at step S10), the control unit 51 calculates the edge intensity of the pattern based on the image information, and determines whether or not the calculated edge intensity is equal to or greater than the predetermined edge intensity (step S12).
The edge intensity means a degree of change in shade (degree of change in brightness) of a boundary (contour) in a captured pattern, and as the edge intensity becomes higher, the shade (brightness) becomes clearer, that is, it means that an image is focused (accurately focused).
When the edge intensity is smaller than the predetermined edge intensity (no at step S12), the image captured by the imaging unit 30 is out of focus, and therefore the control unit 51 returns to step S7 to perform the above-described processing.
Then, when the number of shots is still less than the predetermined number, in other words, when the number of shots does not reach the predetermined number, the control section 51 performs the shooting of the pattern of the base sheet G again in step S8, and performs the process of decreasing again in step S9.
On the other hand, when the edge intensity is equal to or higher than the predetermined edge intensity (yes in step S12), the control unit 51 calculates the start point position XY1 and the end point position XY2 of the measurement point using the captured image because the captured image is focused (accurately focused) (step S13).
Specifically, the controller 51 calculates the start point position XY1 and the end point position XY2 of the measurement point from the position of the pattern matching the stored pattern shape B in the focused image, with a high correlation value for the stored pattern shape B.
More specifically, the origin O is set in the memory pattern shape B as described above (see fig. 5). The control unit 51 sets, as a "reference point", a position corresponding to the origin O in a pattern matching the stored pattern shape B in the captured image. Then, the control section 51 calculates the start point position XY1 and the end point position XY2 based on the reference point and the pixel coordinate information satisfying the position information of the storage section 52.
Next, the control section 51 measures the distance between the start point position XY1 and the end point position XY2 calculated in step S13 as the line width a of the pattern P at the measurement point (step S14). That is, the control section 51 measures the pattern shape of the substrate G based on the image information obtained by the imaging section 30.
Next, the control unit 51 determines whether or not the measurement of the plurality of measurement points is completed (step S15). When determining that the measurement at the plurality of measurement points has not been completed (no at step S15), the control unit 51 returns to step S4 to determine the positions of the other measurement points, and performs the line width measurement at steps S5 to S14.
On the other hand, when determining that the measurement at the plurality of measurement points is completed (yes at step S15), the control unit 51 ends the present process. That is, the line width measurement processing for the substrate G is ended.
< shooting processing >
Next, specific contents of the imaging process will be described with reference to fig. 9 to 12. Fig. 9 is a flowchart showing a processing flow of the imaging processing according to the embodiment.
First, the control section 51 measures the height H from the pattern surface Ga of the substrate G to the lens 30a of the imaging section 30 using the camera height measuring section 31 (step S20).
Next, the correcting unit 51a corrects the height H from the substrate G to the imaging unit 30 based on the deviation amount D between the imaging unit 30 and the camera height measuring unit 31 obtained in the above-described step S6 (step S21). This makes it possible to correct the relative positional deviation between the imaging unit 30 and the camera height measuring unit 31.
Next, the control unit 51 detects the temperatures of a plurality of portions around the imaging unit 30 by using the temperature detection unit 70 (step S22). For example, the control section 51 detects the temperatures of the 1 st mounting plate 101, the 2 nd mounting plate 102, the motor 104, and the lens barrel 30b of the photographing section 30.
Next, the correcting section 51a further corrects the height H from the pattern surface Ga of the substrate G to the lens 30a of the imaging section 30 based on the temperatures of the plurality of portions around the imaging section 30 detected by the temperature detecting section 70 (step S23). The details of the correction processing will be described later.
Before the correction processing, in the substrate processing system 1 of the embodiment, the learning data 52a is acquired and stored in the storage unit 52. The process of acquiring the learning data 52a is performed, for example, using a sample substrate having a sample pattern formed on a pattern surface.
Fig. 10 is a flowchart showing a processing flow of the learning data 52a acquisition processing according to the embodiment. First, the control unit 51 controls the operation of the transport unit 20 to transport the sample substrate on which the sample pattern is formed (step S30). Further, the sample pattern formed on the sample substrate is not limited to the case of the pattern shown in fig. 5, and may be a pattern of any shape.
Next, the control unit 51 determines whether or not the sample substrate is at (placed on) a predetermined position based on the detection signal output from the substrate position detection unit 22 (step S31). When it is determined that the sample substrate is not at (is not placed at) the predetermined position (no at step S31), the control unit 51 ends the process in this manner.
On the other hand, when the sample substrate is determined to be at (placed on) the predetermined position (yes at step S31), the control unit 51 stops the operation of the transport unit 20 to stop the sample substrate (step S32).
Next, the control unit 51 measures the height Ha in the Z-axis direction from the pattern surface of the sample substrate to the lens 30a of the imaging unit 30 based on the imaging distance when the imaging unit 30 is in focus, using the imaging unit 30. That is, the control section 51 measures the exact height Ha from the pattern surface of the sample substrate to the lens 30a of the imaging section 30 using the imaging section 30 (step S33).
For example, the control unit 51 can measure the exact height Ha from the pattern surface of the sample substrate to the lens 30a of the imaging unit 30 based on the edge strength of the sample pattern image imaged by the imaging unit 30.
Next, the controller 51 detects the temperatures of a plurality of portions around the imaging unit 30 at the time when the accurate height Ha is measured in step S33, using the temperature detector 70 (step S34). For example, the control unit 51 detects the temperatures of the 1 st mounting plate 101, the 2 nd mounting plate 102, the motor 104, and the lens barrel 30b of the imaging unit 30 at the time when the accurate height Ha is measured.
Then, the controller 51 stores the exact height Ha measured in step S33 and the temperatures of the plurality of portions around the imaging unit 30 detected in step S34 in the storage unit 52 as learning data 52a (step S35).
That is, the learning data 52a stores data relating to the accurate height Ha and data relating to the temperatures of a plurality of portions around the imaging unit 30 corresponding to the accurate height Ha as a set of data.
Next, the control unit 51 determines whether or not the number of measurements in step S33 and step S34 is equal to or greater than a predetermined number (step S36). When determining that the number of times of measurement in step S33 and step S34 is equal to or greater than the predetermined number of times (yes in step S36), the control unit 51 ends the present process. That is, the acquisition processing of the learning data 52a is ended.
On the other hand, if the number of times of measurement in step S33 and step S34 is not equal to or greater than the predetermined number of times (no in step S36), the control unit 51 returns to the process in step S33.
As described herein, in the embodiment, it takes a certain amount of time to acquire data in which the height Ha and the temperatures of a plurality of portions are grouped into one set, and store the data as the learning data 52 a. This makes it possible to store data relating to the exact height Ha when the temperatures of a plurality of portions around the imaging unit 30 have variously changed, as the learning data 52 a.
The learning data 52a described here may be acquired before shipment of the substrate processing system 1, or may be acquired after the substrate processing system 1 is installed in a factory.
Returning to the description of fig. 9, the description of the processing of step S23 is continued. The correction unit 51b performs multivariate analysis on the learning data 52a stored in advance in the storage unit 52, thereby creating an estimation model capable of estimating the height H corresponding to the temperatures of a plurality of portions around the imaging unit 30.
For example, the correction unit 51b performs a multiple regression analysis, which is an example of multivariate analysis, to create an estimation model represented by the following expression (1).
Y＝a1X1+a2X2+a3X3+a4X4……(1)
Y: height from the substrate G to the image pickup section 30
X1: temperature of the 1 st mounting board 101
X2: temperature of the 2 nd mounting plate 102
X3: temperature of the electric machine 104
X4: temperature of lens barrel 30b of imaging unit 30
In the multiple regression analysis, the correction unit 51b inputs data on the exact height Ha stored in the learning data 52a to Y in the equation (1), and inputs data on the temperatures of a plurality of portions around the imaging unit 30 to X in the equation (1)1～X4. Thus, the correction unit 51b obtains a in the above expression (1)1～a4The value of (c).
Then, the correction unit 51b obtains a by multiple regression analysis1～a4The value of (1) above, X is the temperature input of a plurality of portions around the imaging unit 30 at the time of the imaging process1～X4And the height H at the time of shooting processing is inferred therefrom.
Then, by using the estimated value of the height H, the correction portion 51b can correct the height H from the imaging portion 30 to the substrate G. In the above example, the multivariate analysis is exemplified by the multivariate analysis using the multiple regression analysis, but the method that can be used for the multivariate analysis is not limited to the multivariate analysis, and various methods among the multivariate analysis can be used.
Following the process of step S23 described here, the control section 51 determines whether the height H from the substrate G to the imaging section 30 has become low based on the height H corrected in steps S21 and S23 described above (step S24). Specifically, the control unit 51 determines whether or not the height H measured in the present process is lower than the height H measured in the previous process.
When the height H from the imaging unit 30 to the substrate G is not low (no at step S24), the control unit 51 returns to step S20 to repeat the above-described process.
On the other hand, when the height H from the imaging section 30 to the substrate G becomes low (yes at step S24), the control section 51 determines whether or not the height H from the pattern surface Ga of the substrate G to the lens 30a of the imaging section 30 is the imaging start distance (step S25).
The shooting start distance is set within a predetermined focus range including a focus distance (focus distance). The predetermined focus range is a range in which the fluctuation in the image captured by the imaging unit 30 is small and the line width of the pattern P can be measured with high accuracy.
Specifically, the shooting start distance is an upper limit shooting start distance longer than the in-focus distance. The upper limit photographing start distance is set such that the distance from the camera of the photographing section 30 to the pattern surface Ga of the substrate G is within a prescribed focus range during the photographing time from the start of photographing to the end of photographing.
The upper limit shooting start distance is set based on the performance of the shooting section 30, specifically, based on the shooting time. The shorter the photographing time is, the closer the upper limit photographing start distance is to the in-focus distance.
When the height H from the substrate G to the imaging unit 30 is the imaging start distance (yes in step S25), the control unit 51 starts imaging and performs imaging (step S26), and the present process is ended. That is, the imaging process for the pattern surface Ga of the substrate G is ended.
On the other hand, if the height H from the substrate G to the imaging unit 30 does not become the imaging start distance (no at step S25), the control unit 51 returns to step S20 to repeat the above-described processing.
Thus, the control section 51 performs imaging at a predetermined timing when the height H from the pattern surface Ga of the substrate G to the lens 30a of the imaging section 30 is low and the height H is the upper limit imaging start distance.
The measurement control device 50 corrects the height H of the imaging section 30 in the Z-axis direction in the processing of steps S21 and S23 so that the height H from the pattern surface Ga of the substrate G to the lens 30a of the imaging section 30 becomes the focal distance of the imaging section 30. However, the height H from the pattern surface Ga of the substrate G to the lens 30a of the imaging unit 30 varies depending on the Z-axis vibration of the imaging unit 30 or the substrate G.
Then, the control section 51 first determines whether or not the height H from the pattern surface Ga of the substrate G to the lens 30a of the imaging section 30 is low based on the vibration in the Z-axis direction of the imaging section 30 or the substrate G.
That is, the control unit 51 determines whether the camera is close to the substrate G or the camera is far from the substrate G based on the vibration in the Z-axis direction of the imaging unit 30 or the substrate G.
Then, the control section 51 starts imaging when the height H from the pattern surface Ga of the substrate G to the lens 30a of the imaging section 30 becomes low and the height H becomes the imaging start distance.
Thus, the imaging unit 30 can perform imaging at a predetermined timing based on the height H from the pattern surface Ga of the substrate G to the lens 30a of the imaging unit 30. That is, when the imaging unit 30 performs imaging at a different measurement point or on a different substrate G, the imaging unit can perform imaging at a predetermined timing based on the height H from the pattern surface Ga of the substrate G to the lens 30a of the imaging unit 30.
For example, the height H from the pattern surface Ga of the substrate G to the lens 30a of the imaging unit 30 is changed as shown by a solid line or a broken line in fig. 11. Fig. 11 is a diagram for explaining the shooting start time in the shooting process according to the embodiment.
When the height H from the pattern surface Ga of the substrate G to the lens 30a of the imaging unit 30 is changed as shown by the solid line or the broken line in fig. 11, the line width measuring device 18 starts imaging at a predetermined timing at time T1.
For example, when the height H from the pattern surface Ga of the substrate G to the lens 30a of the imaging unit 30 changes as shown by the broken line in fig. 11, the imaging is started outside the predetermined focus range when the imaging is started at time T1. Therefore, there is a possibility that the captured image may be an image with a focus that is deviated.
On the other hand, when the height H from the pattern surface Ga of the substrate G to the lens 30a of the imaging unit 30 changes as shown by the broken line in fig. 11, the line width measuring device 18 starts imaging at a predetermined timing at time T2.
In this way, the line width measuring device 18 can take an image at a predetermined timing based on the height H from the pattern surface Ga of the substrate G to the lens 30a of the image taking section 30, thereby bringing the focal state of each taken image into a close state.
In the embodiment, the correction unit 51b corrects the height H from the pattern surface Ga of the substrate G to the lens 30a of the imaging unit 30 measured by the camera height measurement unit 31 based on the temperatures of the plurality of portions around the imaging unit 30 detected by the temperature detection unit 70.
Accordingly, even when the temperatures of a plurality of portions around the imaging unit 30 gradually change due to various reasons, and therefore, when a relative positional deviation occurs between the imaging unit 30 and the camera height measuring unit 31, the height H can be controlled so as to be the focal distance of the imaging unit 30.
Fig. 12 is a diagram showing the number of errors in the imaging process in the case where the correction process is performed based on the temperatures of a plurality of portions according to the embodiment. Fig. 12 shows the result of counting the above-described imaging process as an error in the case of an image in which the focus of the imaged pattern is deviated.
As shown in fig. 12, it is understood that errors hardly occur when the correction process based on the temperatures of a plurality of portions is performed, whereas many errors occur when the correction process is not performed.
That is, in the embodiment, even when the environmental temperature gradually fluctuates with the lapse of time, the height H can be controlled so as to be the focal distance of the imaging unit 30, and therefore, the pattern shape of the substrate G can be measured with high accuracy over a long period of time.
In the embodiment, the height H can be controlled so as to be the focal distance of the imaging unit 30 without measuring the exact height Ha from the pattern surface Ga of the substrate G to the lens 30a of the imaging unit 30 by the imaging unit 30 every time.
Therefore, according to the embodiment, the imaging process can be easily performed, and thus the line width measurement process for the substrate G can be completed in a short time.
In the embodiment, the correction unit 51b corrects the height from the pattern surface Ga of the substrate G to the lens 30a of the imaging unit 30 measured by the camera height measurement unit 31 based on the estimation model obtained by performing multivariate analysis on the learning data 52 a.
As described above, by using multivariate analysis, it is possible to comprehensively correct not only simple positional deviation between the imaging unit 30 and the camera height measuring unit 31 but also deviation of the optical system due to inclination of the camera height measuring unit 31, extension of the lens barrel 30b, and the like.
Therefore, according to the embodiment, the pattern shape of the substrate G can be measured with higher accuracy over a long period of time.
In the embodiment, the temperature detection unit 70 may detect the temperatures of a plurality of portions of the support unit 44 that supports the imaging unit 30 and the camera height measurement unit 31, respectively. For example, in the embodiment, the temperature detection unit 70 may detect the temperatures of the 1 st mounting plate 101, the 2 nd mounting plate 102, and the like.
This enables direct detection of the relative positional deviation between the imaging unit 30 and the camera height measuring unit 31. Therefore, according to the embodiment, the pattern shape of the substrate G can be measured with higher accuracy over a long period of time.
In the embodiment, when the motor 104 is provided in the support portion 44, the temperature of the motor 104 may be detected by the temperature detecting portion 70. In this way, by detecting the temperature of the motor 104 as a heat generation source in the support portion 44, the relative positional deviation between the imaging unit 30 and the camera height measuring unit 31 can be directly detected.
Therefore, according to the embodiment, the pattern shape of the substrate G can be measured with higher accuracy over a long period of time.
In the embodiment, the temperature of the lens barrel 30b of the imaging unit 30 may be detected by the temperature detection unit 70. In this way, by detecting the temperature of lens barrel 30b that is likely to affect the optical system due to the fluctuation in the ambient temperature, it is possible to directly detect the relative positional deviation between imaging unit 30 and camera height measuring unit 31.
Therefore, according to the embodiment, the pattern shape of the substrate G can be measured with higher accuracy over a long period of time.
In the above-described embodiment, four locations, that is, the 1 st mounting plate 101, the 2 nd mounting plate 102, the motor 104, and the lens barrel 30b of the imaging unit 30, are given as locations for detecting the temperature by the temperature detecting unit 70, but the temperatures of the locations other than these may be detected by the temperature detecting unit 70.
For example, the temperature detection unit 70 may detect the ambient temperature in the factory where the substrate processing system 1 is installed, the 3 rd mounting plate 103, and the like, and create the learning data 52a based on the temperature of the above-mentioned portions.
< modification example >
Next, a modification of the embodiment will be described with reference to fig. 13 and 14. Fig. 13 is a flowchart showing a processing flow of the imaging processing according to the modification of the embodiment. In a modification example to be described later, the line width measurement process itself performed by the line width measurement device 18 is the same as the example shown in fig. 8, and the description of the line width measurement process is omitted.
First, the control section 51 measures the height H from the pattern surface Ga of the substrate G to the lens 30a of the imaging section 30 using the camera height measuring section 31 (step S40).
Next, the correcting unit 51a corrects the height H from the substrate G to the imaging unit 30 based on the deviation amount D between the imaging unit 30 and the camera height measuring unit 31, which is calculated in step S6 shown in fig. 8 (step S41). This makes it possible to correct the relative positional deviation between the imaging unit 30 and the camera height measuring unit 31.
Next, the control unit 51 detects the temperatures of a plurality of portions around the imaging unit 30 by using the temperature detection unit 70 (step S42). For example, the control section 51 detects the temperatures of the 1 st mounting plate 101, the 2 nd mounting plate 102, the motor 104, and the lens barrel 30b of the photographing section 30.
Next, the correcting section 51a further corrects the height H from the pattern surface Ga of the substrate G to the lens 30a of the imaging section 30 based on the temperatures of the plurality of portions around the imaging section 30 detected by the temperature detecting section 70 (step S43). The processing of step S43 is the same as that of step S23 given in the embodiment, and thus detailed description is omitted.
Next, the control unit 51 adjusts the height of the imaging unit 30 in the Z-axis direction based on the height H corrected in the processing of step S41 and step S43 (step S44). For example, the controller 51 controls the movement of the moving unit 40 so that the height H corrected in the processing of step S41 and step S43 becomes the focal distance of the imaging unit 30.
Then, the control unit 51 starts shooting and performs shooting (step S45), and ends the present process. That is, the imaging process for the pattern surface Ga of the substrate G is ended.
Fig. 14 is a diagram for explaining the shooting start time in the shooting process according to the modified example of the embodiment. In fig. 14, time T11 to time T14 represent the time when the control unit 51 performed the image capturing, that is, the time when the image has been captured.
The substrate G is placed on the transport unit 20, and is therefore affected by vibration of the transport unit 20, external disturbances such as air conditioning, and the like. Accordingly, the height H from the pattern surface Ga of the substrate G to the lens 30a of the imaging unit 30 also oscillates in the Z-axis direction as shown in fig. 14.
On the other hand, in the imaging section 30, when the position of the pattern face Ga of the substrate G does not enter the range E of the depth of field of the imaging section 30, a focused image cannot be imaged. Further, the edge strength becomes high in the case where the pattern face Ga of the substrate G enters the range E of the depth of field, and becomes low in the case where it is out of the range E of the depth of field.
In the example shown in fig. 14, the position of the pattern face Ga of the substrate G is photographed in a state of not entering the range E of the depth of field from the first photographing time T11 to the third photographing time T13.
Therefore, at the shooting times T11, T12, T13, in the process of step S12 shown in fig. 8, the edge intensity is less than the prescribed edge intensity. Thus, in the modification, the imaging process shown in fig. 13 is repeated to perform imaging again.
Then, at the fourth imaging time T14, imaging is performed when the position of the pattern surface Ga of the substrate G enters the range E of the depth of field, and therefore the edge strength becomes equal to or higher than the predetermined edge strength.
That is, in the modification, the line width can be measured based on the focused image, which is the image in which the edge intensity becomes high at the capturing time T14. Therefore, according to the modification, even when the substrate G is placed on the conveying unit 20 and the vibration occurs, the line width of the pattern can be reliably measured.
In the modification, when the edge intensity is less than the predetermined edge intensity, the imaging unit 30 can again image the pattern of the substrate G, and thus the line width can be measured based on the image that is focused reliably.
In the modification, the correction unit 51b corrects the height H from the pattern surface Ga of the substrate G to the lens 30a of the imaging unit 30 measured by the camera height measurement unit 31 based on the temperatures of the plurality of portions around the imaging unit 30 detected by the temperature detection unit 70.
Accordingly, even when the temperatures of a plurality of portions around the imaging unit 30 gradually change due to various reasons, and therefore, when a relative positional deviation occurs between the imaging unit 30 and the camera height measuring unit 31, the height H can be controlled so as to be the focal distance of the imaging unit 30.
Therefore, according to the modification, even when the environmental temperature fluctuates with the lapse of time, the height H can be controlled so as to be the focal distance of the imaging unit 30, and therefore the pattern shape of the substrate G can be measured with high accuracy over a long period of time.
The measuring device (line width measuring device 18) of the embodiment includes a conveying unit 20, an imaging unit 30, a camera height measuring unit 31, a temperature detecting unit 70, and a control unit 51. The transfer unit 20 transfers the substrate G having the pattern formed thereon. The imaging unit 30 is disposed above the transport unit 20, and images a pattern of the substrate G placed on the transport unit 20. The camera height measuring unit 31 is disposed in the vicinity of the imaging unit 30, and measures a height H from the pattern surface Ga of the substrate G on which the pattern is formed to the lens 30a of the imaging unit 30. The temperature detection unit 70 detects the temperatures of a plurality of portions around the imaging unit 30. The control unit 51 controls each unit. The control unit 51 corrects the height H from the pattern surface Ga of the substrate G to the lens 30a of the imaging unit 30 measured by the camera height measuring unit 31 based on the temperatures of the plurality of portions around the imaging unit 30 detected by the temperature detecting unit 70. This enables the pattern shape of the substrate G to be measured with high accuracy over a long period of time.
In the measuring apparatus (line width measuring apparatus 18) according to the embodiment, the control unit 51 corrects the height from the pattern surface Ga of the substrate G to the lens 30a of the imaging unit 30, which is measured by the camera height measuring unit 31, based on the learning data 52 a. The learning data 52a stores in advance the height Ha from the pattern surface Ga of the substrate G to the lens 30a of the imaging unit 30 measured by the imaging unit 30, and the temperatures of a plurality of portions around the imaging unit 30 detected by the temperature detecting unit 70 when the height Ha is measured. This enables the pattern shape of the substrate G to be measured with higher accuracy over a long period of time.
In the measuring apparatus (line width measuring apparatus 18) according to the embodiment, the control unit 51 corrects the height from the pattern surface Ga of the substrate G to the lens 30a of the imaging unit 30 measured by the camera height measuring unit 31 based on the estimation model obtained by performing multivariate analysis on the learning data 52 a. This enables the pattern shape of the substrate G to be measured with higher accuracy over a long period of time.
In addition, the measuring device (line width measuring device 18) of the embodiment further includes a support portion 44 that movably supports the imaging portion 30 and the camera height measuring portion 31 を, respectively. Then, the temperature detection unit 70 detects the temperatures of a plurality of portions on the support unit 44. This enables the pattern shape of the substrate G to be measured with higher accuracy over a long period of time.
In the measuring device (line width measuring device 18) of the embodiment, the support portion 44 has a motor 104 that drives the imaging portion 30 and the camera height measuring portion 31 in the vertical direction. Then, the temperature detection portion 70 detects at least the temperature of the motor 104. This enables the pattern shape of the substrate G to be measured with higher accuracy over a long period of time.
In the measuring device (line width measuring device 18) according to the embodiment, the support portion 44 includes the 1 st mounting plate 101 that supports the imaging portion 30 and the camera height measuring portion 31, respectively. Then, the temperature detection portion 70 detects at least the temperature of the 1 st mounting board 101. This enables the pattern shape of the substrate G to be measured with higher accuracy over a long period of time.
In the measuring device (line width measuring device 18) according to the embodiment, the support portion 44 is configured to be movable relative to the 1 st mounting plate 101, and includes the 2 nd mounting plate 102 that supports the camera height measuring portion 31. Then, the temperature detecting portion 70 detects at least the temperature of the 2 nd mounting plate 102. This enables the pattern shape of the substrate G to be measured with higher accuracy over a long period of time.
In the measuring device (line width measuring device 18) of the embodiment, the imaging unit 30 includes a lens barrel 30b provided between the lens 30a and the camera 30 c. Then, the temperature detection section 70 detects at least the temperature of the lens barrel 30 b. This enables the pattern shape of the substrate G to be measured with higher accuracy over a long period of time.
The measuring method of the embodiment includes a conveying process (step S1), a camera height measuring process (step S20), a temperature detecting process (step S22), a correcting process (step S23), and a photographing process (step S26). The conveying process (step S1) conveys the substrate G on which the pattern is formed. The camera height measuring process (step S20) measures the height H from the pattern surface Ga of the substrate G on which the pattern is formed to the lens 30a of the imaging section 30. The temperature detection step (step S22) detects the temperatures of a plurality of portions around the imaging unit 30. The correcting step (step S23) corrects the height H from the pattern surface Ga of the substrate G to the lens 30a of the imaging section 30, which is measured in the camera height measuring step (step S20), based on the detected temperatures of the plurality of portions around the imaging section 30. The image pickup step (step S26) picks up an image of the pattern of the substrate G conveyed, based on the corrected height H from the pattern surface Ga of the substrate G to the lens 30a of the image pickup section 30. This enables the pattern shape of the substrate G to be measured with higher accuracy over a long period of time.
While the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit thereof. For example, in the above-described embodiment, the case where the learning data 52a is acquired in advance using the sample substrate is given, but the learning data 52a may be acquired in parallel with the process of forming the pattern on the pattern surface Ga of the substrate G.
The embodiments disclosed herein are illustrative in all respects and should not be considered as limiting. In fact, the above-described embodiments can be implemented in a variety of ways. The above-described embodiments may be omitted, replaced, or changed in various ways without departing from the scope and spirit of the appended claims.
Description of the reference numerals
1 substrate processing system
18 line width measuring device (an example of measuring device)
20 conveying part
30 imaging part
30a lens
30b lens barrel
30c camera
31 Camera height measuring section
44 support part
50 measurement control device
51 control part
51a correction unit
52 storage unit
52a learning data
70 temperature detecting part
101 st mounting plate
102 nd 2 mounting plate
104 electric machine
G substrate
Ga pattern surface.

Claims (10)

1. A measuring device, comprising:
a conveying part for conveying the substrate with the pattern;
an imaging unit that is disposed above the conveying unit and images a pattern of the substrate placed on the conveying unit;
a camera height measuring unit disposed in the vicinity of the imaging unit and measuring a height from a pattern surface of the substrate on which the pattern is formed to a lens of the imaging unit;
a temperature detection unit that detects temperatures of a plurality of portions around the imaging unit; and
a control unit for controlling each of the units,
the control unit corrects the height from the pattern surface of the substrate to the lens of the imaging unit measured by the camera height measuring unit based on the temperatures of the plurality of portions around the imaging unit detected by the temperature detecting unit.
2. The measurement device of claim 1, wherein:
the control unit corrects the height from the pattern surface of the base sheet to the lens of the imaging unit, which is measured by the camera height measuring unit, based on learning data in which the height from the pattern surface of the base sheet to the lens of the imaging unit, which is measured by the imaging unit, and the temperatures of a plurality of portions around the imaging unit, which are detected by the temperature detecting unit when the height is measured, are stored in advance.
3. A measuring device as claimed in claim 2, characterized in that:
the control unit corrects the height measured by the camera height measuring unit from the pattern surface of the substrate to the lens of the imaging unit based on an estimation model obtained by performing multivariate analysis on the learning data.
4. A measuring device according to any one of claims 1 to 3, wherein:
further comprising support portions movably supporting the photographing portion and the camera height measuring portion, respectively,
the temperature detection unit detects temperatures of a plurality of portions on the support unit.
5. The measurement device of claim 4, wherein:
the support portion has a motor that drives the photographing portion and the camera height measuring portion in a vertical direction,
the temperature detection unit detects at least a temperature of the motor.
6. The measurement device according to claim 4 or 5, wherein:
the support portion has a 1 st mounting plate supporting the photographing portion and the camera height measuring portion, respectively,
the temperature detection unit detects at least the temperature of the 1 st mounting plate.
7. The measurement device of claim 6, wherein:
the support portion is configured to be movable relative to the 1 st mounting plate, and has a 2 nd mounting plate supporting the camera height measuring portion,
the temperature detection unit detects at least a temperature of the 2 nd mounting plate.
8. The measurement device according to any one of claims 1 to 7, wherein:
the photographing part has a lens barrel disposed between the lens and the camera,
the temperature detection unit detects at least a temperature of the lens barrel.
9. A substrate processing system, comprising:
a resist coating device for coating a substrate with a resist;
a developing device for developing the substrate, which has been exposed to a resist film formed by the resist coating device in a predetermined pattern shape, to form a pattern; and
a measuring device that measures a shape of a pattern formed on the substrate by a developing process in the developing device,
the measuring device includes:
a conveying section that conveys the substrate on which the pattern is formed;
an imaging unit that is disposed above the conveying unit and images a pattern of the substrate placed on the conveying unit;
a camera height measuring unit disposed in the vicinity of the imaging unit and measuring a height from a pattern surface of the substrate on which the pattern is formed to a lens of the imaging unit;
a temperature detection unit that detects temperatures of a plurality of portions around the imaging unit; and
a control unit for controlling each of the units,
the control unit corrects the height from the pattern surface of the substrate to the lens of the imaging unit measured by the camera height measuring unit based on the temperatures of the plurality of portions around the imaging unit detected by the temperature detecting unit.
10. A method of measurement, comprising:
a conveying step of conveying the substrate on which the pattern is formed;
a camera height measuring step of measuring a height from a pattern surface of the substrate on which the pattern is formed to a lens of an imaging unit;
a temperature detection step of detecting temperatures of a plurality of portions around the imaging section;
a correction step of correcting the height from the pattern surface of the substrate to the lens of the imaging unit, which is measured in the camera height measurement step, based on the detected temperatures of the plurality of portions around the imaging unit; and
and an imaging step of imaging the pattern of the substrate conveyed based on the corrected height from the pattern surface of the substrate to the lens of the imaging unit.
CN202110200735.9A 2020-03-03 2021-02-23 Measuring apparatus, substrate processing system, and measuring method Pending CN113340337A (en)

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JP6246673B2 (en) * 2013-09-09 2017-12-13 東京エレクトロン株式会社 Measuring apparatus, substrate processing system, and measuring method
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