CN113336182B - Micro-electromechanical system packaging structure and preparation method thereof - Google Patents
Micro-electromechanical system packaging structure and preparation method thereof Download PDFInfo
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- CN113336182B CN113336182B CN202110546475.0A CN202110546475A CN113336182B CN 113336182 B CN113336182 B CN 113336182B CN 202110546475 A CN202110546475 A CN 202110546475A CN 113336182 B CN113336182 B CN 113336182B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
- B81B7/0048—Packages or encapsulation for reducing stress inside of the package structure between the MEMS die and the substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00325—Processes for packaging MEMS devices for reducing stress inside of the package structure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/07—Interconnects
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/097—Interconnects arranged on the substrate or the lid, and covered by the package seal
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to the technical field of micro-electromechanical system packaging, and provides a micro-electromechanical system packaging structure, which comprises a silicon substrate, an MEMS device structure prepared by patterning on the silicon substrate, and a cover plate for bonding and packaging the MEMS device structure; the back of the silicon substrate is also provided with a second metal layer and a first metal layer in sequence, and the total thickness of the first metal layer and the second metal layer is not less than 5 mu m; the first metal layer and the second metal layer are used for protecting the MEMS device structure from being damaged in bonding packaging and releasing heat generated in the etching process. In the preparation process of the MEMS packaging structure, the metal layer with a certain thickness is deposited on the back surface of the silicon substrate to fix the weak structure of the MEMS device, so that the wafer level packaging of the MEMS device structure can be realized through the process of bonding and scribing after etching, the packaging efficiency is high, the quality is good, and the cost is low.
Description
Technical Field
The invention belongs to the technical field of micro-electromechanical system packaging, and particularly relates to a micro-electromechanical system packaging structure and a preparation method thereof.
Background
After half a century more development, the market for microelectromechanical systems (Micro-Electro-Mechanical System, MEMS) continues to grow, with encouraging prospects. Packaging is a critical step in the engineering of microelectromechanical systems and is an important condition to ensure high reliability. Packaging can protect the micro-electromechanical system chip and can realize the electrical connection between the chip and the external environment, but the technology for packaging MEMS has various difficulties.
For most MEMS, a single chip is typically used for the bond package due to its delicate structure and susceptibility to breakage. However, this single chip packaging method results in an expensive overall chip, limits the diversification of chips, and is difficult to break through in terms of yield and productivity.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a micro-electromechanical system packaging structure, and the micro-electromechanical system packaging structure can realize dicing after packaging and bonding of a wafer by arranging a metal layer with a certain thickness on the back surface of a silicon substrate to fix a weak structure of an MEMS device, so as to solve the problems of high cost and low productivity of the MEMS device chip caused by the adoption of a process of dicing and bonding in the prior art.
In order to achieve the above object, the present invention provides a MEMS packaging structure, which includes a silicon substrate, a MEMS device structure patterned on the silicon substrate, and a cover plate for bonding and packaging the MEMS device structure;
the back of the silicon substrate is also provided with a second metal layer and a first metal layer in sequence, and the total thickness of the first metal layer and the second metal layer is not less than 5 mu m; the metal types adopted by the first metal layer and the second metal layer are the same or different; the first metal layer and the second metal layer are used for protecting the MEMS device structure from being damaged in bonding packaging and releasing heat generated in the etching process.
Preferably, the thickness of the first metal layer is greater than the thickness of the second metal layer.
Preferably, the thickness of the first metal layer is 5 μm to 10 μm, and the thickness of the second metal layer is 200nm to 800nm.
Preferably, the first metal layer is made of one or more of aluminum, chromium, copper and gold, and the second metal layer is made of one or more of aluminum, chromium, copper and gold.
Preferably, the cover plate is a silicon substrate.
According to another aspect of the present invention, there is provided a method for manufacturing a mems package structure, comprising the steps of:
patterning and preparing a MEMS device structure on the front surface of the silicon substrate;
forming a second metal layer on the back surface of the silicon substrate;
forming a first metal layer on the back of the second metal layer;
etching the MEMS device structure on the front side of the silicon substrate;
bonding and packaging the silicon substrate and the cover plate, and scribing;
and removing the first metal layer and the second metal layer on the back surface of the silicon substrate.
Preferably, the second metal layer is formed by a sputtering method, a thermal evaporation method, or an electron beam evaporation method.
Preferably, the first metal layer is formed by an electroplating process.
Preferably, the MEMS device structure is etched by a deep plasma etch process.
Preferably, dicing is performed using a laser dicing saw.
In general, the above technical solutions conceived by the present invention have the following beneficial effects compared with the prior art:
(1) According to the invention, the metal layer with a certain thickness is arranged on the back surface of the silicon substrate, so that the MEMS device structure on the front surface of the etched silicon substrate can be fixed, and meanwhile, as the metal has good heat conductivity, heat generated in the etching process can be released, and the MEMS device structure is further protected from damage caused by overhigh temperature.
(2) According to the invention, the metal layer is deposited on the back surface of the silicon substrate, then etching is carried out, and then the whole packaging bonding and scribing processes are sequentially carried out, so that the wafer-level packaging can be realized aiming at the complex structure of the MEMS device.
(3) The invention adopts the silicon substrate to replace a common glass plate as a packaging cover plate, a laser scribing machine can be used for scribing, and the high-energy laser beam irradiates the part to be cut, so that the irradiated area is locally melted and gasified, thereby achieving the purpose of scribing.
Drawings
FIG. 1 is a schematic diagram of a MEMS package structure according to an embodiment of the present invention, wherein: 1-a first metal layer, 2-a second metal layer, 3-a silicon substrate, 4-a MEMS device structure, 41-a weak structure in the MEMS device, and 5-a cover plate.
Fig. 2 is a schematic diagram of an accelerometer package structure according to a comparative example of the present invention, wherein: 2' -aluminum layer, 3' -silicon substrate, 4' -accelerometer device structure, weak structure in 41' -accelerometer device, 5' -glass cover plate, 6' -silicon substrate, 7' -photoresist.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
The invention provides a MEMS device packaging structure, which is shown in the figure 1, and comprises a silicon substrate 3, a MEMS device structure 4 and a cover plate 5, wherein the MEMS device structure 4 is prepared by patterning on the silicon substrate 3, and the cover plate 5 is used for bonding and packaging the MEMS device structure 4. The MEMS device structure 4 may be an internal device structure of a MEMS accelerometer, an internal device structure of a micro-vibrator, an internal device structure of a MEMS pressure sensor, an internal device structure of a MEMS gyroscope, or the like. Because the weak structure 41 in the MEMS device is very thin, such as a spring in the MEMS accelerometer, the trace on the spring is broken due to the breakage caused by slight collision during dicing, so that signal detection cannot be realized. The invention is used for releasing heat generated in the etching process and fixing the weak structure 41 in the etched MEMS device by arranging the metal layer with a certain thickness on the back surface of the silicon substrate. Specifically, the back of the silicon substrate 3 is sequentially provided with a second metal layer 2 and a first metal layer 1, the total thickness of the first metal layer 1 and the second metal layer 2 is not less than 5 μm, and the metal types adopted by the first metal layer 1 and the second metal layer 2 can be the same or different.
In some embodiments, the first metal layer 1 and the second metal layer 2 are made of metal materials with good heat conduction performance, high temperature resistance and high hardness, and preferably one or more of aluminum, chromium, copper and gold. The thickness of the first metal layer 1 is greater than the thickness of the second metal layer 2, and further preferably, the thickness of the first metal layer 1 is 5 μm to 10 μm and the thickness of the second metal layer 2 is 200nm to 800nm.
In some embodiments, the cover plate 5 is a silicon substrate, so that a laser dicing saw may be used for dicing during the manufacturing process of the mems package structure.
The invention also provides a preparation method of the MEMS device packaging structure, which comprises the following steps:
patterning and preparing a MEMS device structure 4 on the front surface of the silicon substrate 3;
forming a second metal layer 2 on the back surface of the silicon substrate 3;
forming a first metal layer 1 on the back of the second metal layer 2;
etching the MEMS device structure 4 on the front side of the silicon substrate 3;
bonding and packaging the silicon substrate 3 and the cover plate 5, and then scribing;
the first metal layer 1 and the second metal layer 2 on the back side of the silicon substrate are removed.
In some embodiments, the second metal layer 2 is formed by a sputtering method, a thermal evaporation method or an electron beam evaporation method, and the material adopted by the second metal layer 2 is one or more of aluminum, chromium, copper and gold, and the thickness of the second metal layer 2 is 200nm-800nm.
In some embodiments, the first metal layer 1 is formed by electroplating, and the material adopted by the first metal layer 1 is one or more of aluminum, chromium, copper and gold, and the thickness of the first metal layer 1 is 5 μm-10 μm. The electroplating process adopts self-assembly equipment, and the electroplating time is adjusted in a fixed voltage mode to achieve the effect of controlling the film thickness.
In some embodiments, the corresponding pattern is prepared on the silicon substrate 3 by spin coating, photolithography, development, coating, stripping, and the like.
In some embodiments, the cover plate 5 is provided with a corresponding pattern by using processes such as spin coating, photolithography, development, electroplating, etc., and the cover plate 5 is provided with packaging solder to bond and package the silicon substrate 3 and the cover plate 5.
In the preparation of the surface pattern of the silicon substrate 3 or the cover plate 5, the spin coating method is a conventional spin coating method, and the thickness of PR glue is generally 5-9 mu m; the lithography apparatus mainly employs MA6 and a direct write type exposure machine.
In some embodiments, the deep plasma etching process is adopted to etch the MEMS device structure, the structure size is precisely controlled, and the etching precision is high.
In some embodiments, a laser dicing saw is used for dicing, and the to-be-cut part is melted at high temperature, so that the vibration of the device is small, and the fine structure of the MEMS device is protected from being damaged.
In some embodiments, the second metal layer 2 and the first metal layer 1 are removed by a wet etching process. The wet etching has good selectivity, good repeatability, high production efficiency and low cost.
The following describes the above technical scheme in detail with reference to specific embodiments.
Examples
Taking a packaged MEMS accelerometer as an example, the embodiment provides an accelerometer packaging structure, which sequentially stacks a first metal aluminum layer, a second metal aluminum layer, a silicon substrate, an accelerometer device structure and a silicon substrate cover plate, wherein the thicknesses of the first metal aluminum layer, the second metal aluminum layer, the silicon substrate and the silicon substrate cover plate are 5 μm, 400nm, 500 μm and 500 μm respectively.
The specific preparation flow of the accelerometer packaging structure is as follows:
s1, patterning and preparing an accelerometer device structure on the front surface of a silicon substrate, which comprises the following steps:
s1.1, initial silicon substrate thickness: 500 μm, its surface thermal oxide layer (non-conductive substrate) thickness: 300nm;
s1.2, performing organic cleaning and oxygen plasma cleaning on a silicon substrate;
s1.3, adopting a PlasmaPro 80PECVD plasma enhanced chemical vapor deposition system manufactured by Oxford company in England to deposit a silicon dioxide film with the thickness of 200nm, wherein the technological parameters of the deposition step are as follows: the temperature is 300 ℃, the deposition rate is 50nm/min, and the deposition time is 4min;
s1.4, plating chromium on the surface of the silicon dioxide by adopting electron beam evaporation for 100nm, and coating speed
S1.5, uniformly coating 8 mu m by a coating machine, and photoetching by MA 6;
s1.6, etching chromium and silicon dioxide, wherein the silicon dioxide and the chromium serve as an ohmic layer;
s1.7, depositing a bimetal composite layer on the ohmic layer, wherein the steps are as follows: sequentially plating chromium on the surface of the ohmic layer by adopting electron beam evaporation for 20nm at a rate
Gold plating 200nm>
Chromium plating can be used to increase adhesion between gold and silica;
s1.8, coating PI glue on the bimetal composite layer by adopting a numerical control spin coater, wherein the thickness is 10 mu m;
s1.9, baking treatment is carried out by gradient heating;
s1.10, repeatedly depositing a bimetal composite layer on the PI adhesive.
S2, manufacturing and depositing a second metal aluminum layer on the back surface of the silicon substrate with the thermal oxidation layer, wherein the method specifically comprises the following steps of:
s2.1, performing organic cleaning and oxygen plasma cleaning on the back surface of the silicon substrate;
s2.2, adopting electron beam evaporation to deposit a second metal aluminum layer at 400nm, and coating film speed
S3, manufacturing a first metal aluminum layer on the back of the second metal aluminum layer, and specifically comprising the following steps:
s3.1, covering the metal structures of the silicon substrate front accelerometer by using an insulating tape;
s3.2, plating a first metal aluminum layer in an electroplating mode: setting a power source 0.2781mA, and electroplating with a constant voltage of 5V and an electroplating thickness of 5 mu m;
s3.3, cleaning by deionized water and drying.
S4, deep silicon etching is carried out on the accelerometer device structure by adopting STPS equipment, and a region corresponding to the spring vibrator in the device structure is etched through, so that the spring can vibrate freely.
S5, soaking the acetone for more than or equal to 12 hours, and stripping the photoresist on the surface of the internal structure.
S6, thickness of the silicon-based cover plate: and (5) manufacturing a column on the front surface of the silicon-based cover plate with 500 mu m, and preparing an identification Mark on the back surface of the column.
And S7, bonding and packaging the silicon substrate and the silicon substrate cover plate by adopting a vacuum bonding machine.
S8, cutting the wafer into single chips by using a laser dicing saw.
S9, removing the first metal aluminum layer on the back of the chip by adopting a wet etching process.
S10, removing the second metal aluminum layer on the back surface by soaking the chips in the developing solution.
Comparative example
This comparative example takes a package MEMS accelerometer as an example, and provides an accelerometer package structure, as shown in fig. 2, comprising a silicon substrate 6', a photoresist 7', an aluminum layer 2', a silicon substrate 3', an accelerometer device structure 4', and a glass cover plate 5' stacked in this order. The thicknesses of the silicon substrate 6', the photoresist 7', the aluminum layer 2', the silicon substrate 3' and the glass cover plate 5' are 500 μm, 4 μm, 400nm, 500 μm and 500 μm respectively.
The specific preparation flow of the accelerometer packaging structure is as follows:
s1, providing a thickness of a silicon substrate 3': 500 μm, its surface thermal oxide layer (non-conductive substrate) thickness: 300nm; the accelerometer device structure 4 'is patterned and fabricated on the front side of the silicon substrate 3' as in the embodiments of the present invention.
S2, manufacturing a deposited aluminum layer 2 'on the back surface of the silicon substrate 3', which is the same as the embodiment of the invention.
S3, providing the thickness of the silicon substrate 6': 500 μm, its surface thermal oxide layer (non-conductive substrate) thickness: 200nm.
S4, coating photoresist 7'4 mu m on the surface of the silicon substrate 6' by adopting a spin coater, and pre-baking at 120 ℃/5min.
And S5, after the aluminum layer 2 'is attached to the photoresist 7', placing the aluminum layer in STPS equipment for vacuumizing treatment to enable the aluminum layer and the photoresist to be attached closely.
S6, deep silicon etching is carried out on the accelerometer device structure 4' by adopting STPS equipment.
S7, soaking the silicon substrate 6' in acetone for 24h, and stripping the silicon substrate.
S8, soaking the developing solution to remove the aluminum layer 2' so as to form a single chip.
S9, providing a glass cover plate 5' thickness: 500 μm, a pillar was fabricated on the front face of the glass cover plate 5'.
S10, dicing the glass cover plate 5' by using a dicing saw.
And S11, bonding the diced glass cover plate 5' and the single chip by adopting flip-chip bonding equipment.
In order to reduce the manufacturing cost of the MEMS packaging structure and improve the packaging efficiency and the productivity, the invention adopts a process of packaging the wafer and dicing the wafer into single chips. However, as shown in fig. 1 and 2, in the conventional packaging structure in the comparative example, since the aluminum layer 2 'on the back surface of the silicon substrate 3' is too thin, the aluminum layer is easily foamed and deformed during the acetone photoresist removing process, so that the adhesion force between the aluminum layer and the silicon substrate is reduced, the aluminum layer is easily separated to form a single chip, and wafer level packaging cannot be realized; meanwhile, after the thin aluminum layer is detached, the bottom of the weak structure 41' in the accelerometer device is not fixed, and is connected with other structures only by the upper part, so that the accelerometer device can easily move or be broken under the action of external force in the bonding and scribing processes. Therefore, in the embodiment of the invention, the metal layer with a certain thickness is arranged on the back surface of the silicon substrate 3, and the silicon substrate is etched through during etching, so that the metal layer with a thicker back surface of the silicon substrate can well fix the MEMS device structure (comprising the weak structure 41 in the device), and the interface of the metal layer and the silicon substrate is not affected during soaking the acetone, thus the bonding packaging and then dicing cutting can be realized; meanwhile, the metal layer has good heat conductivity, and can release heat generated in the etching process, so that the structure of the MEMS internal device is well protected.
It will be readily appreciated by those skilled in the art that the foregoing description is merely a preferred embodiment of the invention and is not intended to limit the invention, but any modifications, equivalents, improvements or alternatives falling within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (9)
1. The preparation method of the MEMS packaging structure comprises a silicon substrate, an MEMS device structure which is prepared by patterning on the silicon substrate, and a cover plate which is used for bonding and packaging the MEMS device structure; the back of the silicon substrate is also provided with a second metal layer and a first metal layer in sequence, and the total thickness of the first metal layer and the second metal layer is not less than 5 mu m; the metal types adopted by the first metal layer and the second metal layer are the same or different; the first metal layer and the second metal layer are used for protecting the MEMS device structure from being damaged in bonding packaging and releasing heat generated in the etching process; the method is characterized by comprising the following steps of:
patterning and preparing a MEMS device structure on the front surface of the silicon substrate;
forming a second metal layer on the back surface of the silicon substrate;
forming a first metal layer on the back of the second metal layer;
etching the MEMS device structure on the front side of the silicon substrate;
bonding and packaging the silicon substrate and the cover plate, and scribing;
and removing the first metal layer and the second metal layer on the back surface of the silicon substrate.
2. The method of manufacturing according to claim 1, characterized in that: the second metal layer is formed by a sputtering method, a thermal evaporation method, or an electron beam evaporation method.
3. The method of manufacturing according to claim 1, characterized in that: the first metal layer is formed by an electroplating process.
4. The method of manufacturing according to claim 1, characterized in that: and etching the MEMS device structure through a deep plasma etching process.
5. The method of manufacturing according to claim 1, characterized in that: and scribing by using a laser scribing machine.
6. The method of manufacturing according to claim 1, characterized in that: the thickness of the first metal layer is greater than the thickness of the second metal layer.
7. The method of manufacturing according to claim 1, characterized in that: the thickness of the first metal layer is 5-10 mu m, and the thickness of the second metal layer is 200-800 nm.
8. The method of manufacturing according to claim 1, characterized in that: the first metal layer is made of one or more of aluminum, chromium, copper and gold, and the second metal layer is made of one or more of aluminum, chromium, copper and gold.
9. The method of manufacturing according to claim 1, characterized in that: the cover plate is a silicon substrate.
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