CN113330549A - 一种巨量转移装置及其制造方法、以及显示设备 - Google Patents
一种巨量转移装置及其制造方法、以及显示设备 Download PDFInfo
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- CN113330549A CN113330549A CN201980004133.7A CN201980004133A CN113330549A CN 113330549 A CN113330549 A CN 113330549A CN 201980004133 A CN201980004133 A CN 201980004133A CN 113330549 A CN113330549 A CN 113330549A
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- emitting diode
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 125
- 238000000034 method Methods 0.000 claims abstract description 53
- 239000012790 adhesive layer Substances 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims description 30
- 239000002346 layers by function Substances 0.000 claims description 21
- 239000010410 layer Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 21
- 238000001312 dry etching Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
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- 239000000463 material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
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- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
本发明提供了一种巨量转移装置的制造方法。该制造方法包括提供涂布有黏着层的中转基板；将发光二极管从原生基板转移至所述中转基板；在所述发光二极管上蚀刻出支撑结构，所述支撑结构包括从所述中转基板上延伸的至少两个支撑柱，所述支撑柱远离所述中转基板的端部与所述发光二极管连接，以使得所述发光二极管与所述中转基板分离设置；去除所述黏着层，以使得所述发光二极管仅通过所述支撑结构固定于所述中转基板。此外，本发明还提供一种巨量转移装置、以及显示设备，所述巨量转移装置包括中转基板；间隔设置于所述中转基板上的发光二极管；设置于所述中转基板并支撑所述发光二极管的支撑结构。
Description
PCT国内申请，说明书已公开。
Claims (1)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/130529 WO2021134489A1 (zh) | 2019-12-31 | 2019-12-31 | 一种巨量转移装置及其制造方法、以及显示设备 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113330549A true CN113330549A (zh) | 2021-08-31 |
| CN113330549B CN113330549B (zh) | 2022-07-22 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980004133.7A Active CN113330549B (zh) | 2019-12-31 | 2019-12-31 | 一种巨量转移装置及其制造方法、以及显示设备 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US12062642B2 (zh) |
| CN (1) | CN113330549B (zh) |
| WO (1) | WO2021134489A1 (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116783691A (zh) * | 2021-11-29 | 2023-09-19 | 京东方科技集团股份有限公司 | 发光基板及其制备方法、显示装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150076528A1 (en) * | 2013-09-16 | 2015-03-19 | LuxVue Technology Corporation | Adhesive wafer bonding with sacrificial spacers for controlled thickness variation |
| CN107978548A (zh) * | 2017-11-20 | 2018-05-01 | 厦门市三安光电科技有限公司 | 微元件的巨量转移方法 |
| CN109148352A (zh) * | 2018-08-02 | 2019-01-04 | 上海天马微电子有限公司 | 转移头阵列、转移头和转移无机发光二极管的方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10937768B2 (en) | 2017-03-13 | 2021-03-02 | Seoul Semiconductor Co., Ltd. | Method of manufacturing display device |
| EP3692580A4 (en) * | 2017-10-06 | 2022-07-13 | Nanosys, Inc. | LED WITH OXIDIZED METAL CONTACTS |
| US11177154B2 (en) * | 2017-12-19 | 2021-11-16 | Pixeled Display Co., Ltd. | Carrier structure and micro device structure |
| TWI699870B (zh) | 2018-06-14 | 2020-07-21 | 啟端光電股份有限公司 | 發光二極體之承載結構及其製造方法 |
| CN109920815B (zh) * | 2019-03-20 | 2021-09-21 | 京东方科技集团股份有限公司 | 一种电路基板及其制作方法和微发光二极管显示基板 |
-
2019
- 2019-12-31 WO PCT/CN2019/130529 patent/WO2021134489A1/zh active Application Filing
- 2019-12-31 CN CN201980004133.7A patent/CN113330549B/zh active Active
-
2021
- 2021-04-27 US US17/241,712 patent/US12062642B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150076528A1 (en) * | 2013-09-16 | 2015-03-19 | LuxVue Technology Corporation | Adhesive wafer bonding with sacrificial spacers for controlled thickness variation |
| CN107978548A (zh) * | 2017-11-20 | 2018-05-01 | 厦门市三安光电科技有限公司 | 微元件的巨量转移方法 |
| CN109148352A (zh) * | 2018-08-02 | 2019-01-04 | 上海天马微电子有限公司 | 转移头阵列、转移头和转移无机发光二极管的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US12062642B2 (en) | 2024-08-13 |
| CN113330549B (zh) | 2022-07-22 |
| WO2021134489A1 (zh) | 2021-07-08 |
| US20210249388A1 (en) | 2021-08-12 |
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Address after: 402760 No.69, Wushan Road, Biquan street, Bishan District, Chongqing Patentee after: Chongqing Kangjia Optoelectronic Technology Co.,Ltd. Country or region after: China Address before: 402760 No.69, Wushan Road, Biquan street, Bishan District, Chongqing Patentee before: Chongqing Kangjia Photoelectric Technology Research Institute Co.,Ltd. Country or region before: China |
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