CN113328713B - Vertically stacked packaging filter - Google Patents
Vertically stacked packaging filter Download PDFInfo
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- CN113328713B CN113328713B CN202110498846.2A CN202110498846A CN113328713B CN 113328713 B CN113328713 B CN 113328713B CN 202110498846 A CN202110498846 A CN 202110498846A CN 113328713 B CN113328713 B CN 113328713B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
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Abstract
The invention discloses a vertically stacked packaging filter, which comprises an input feeder line, an output feeder line and first to Nth vertical resonators, wherein N is a natural number greater than 1, the (i + 1) th vertical resonator is positioned above the ith vertical resonator, N is greater than or equal to i and is an integer; each vertical resonator comprises a vertical capacitor and a high-impedance line inductor, wherein the vertical capacitor in each vertical resonator is positioned above the high-impedance line inductor or the vertical capacitor is positioned below the high-impedance line inductor; two ends of a vertical capacitor in each vertical resonator are respectively connected with two ends of a high-impedance line inductor; the adjacent vertical resonators are interconnected in a staggered coupling mode, the input feeder line is connected with the first vertical resonator, and the output feeder line is connected with the Nth vertical resonator. The packaging interconnection structure provided by the invention can realize two functions of filtering and interconnection at the same time, and is beneficial to improving the system integration level.
Description
Technical Field
The invention relates to the technical field of radio frequency circuit design, in particular to a vertically stacked packaged filter.
Background
The rf filter is one of the most important functional circuits in the rf system, and with the development of the new generation of wireless communication technology, the rf system is gradually developing towards the packaging system, so that the packaging filter is widely researched. For packaging the filter, how to combine the filter design and the packaging process becomes a key problem of research. In addition, to achieve the interconnection of multiple functions and multiple process modules in a packaged system, the packaging process-based interconnect structure is becoming a key to the overall performance of the system. The main indices describing the package filter and package interconnect structure are: 1) Operating frequency and bandwidth; 2) Port return loss; 3) Transmission loss; 4) And (5) packaging structure size.
The disclosed package filter and package interconnection structure has the following structures:
1) Journal IEEE Transactions on Microwave Theory and Techniques 2019, no. 4 discloses an LTCC packaged filter, and quasi lumped capacitors and inductive elements are adopted to construct resonators and coupling among the resonators based on a multilayer process, so that the characteristics of 0.9GHz and 2.45GHz dual-passband filtering are realized. However, the quasi-lumped resonators adopt the same-layer coupling, and the resonators are arranged in a horizontal mode, so that the overall size is large;
2) Journal IEEE ACCESS 2019, 7 discloses a paper entitled Compact Microwave and Millimeter-Wave bands Filters Using LTCC-Based Hybrid lumpy and Distributed detectors, which is the aforementioned work of the applicant of the present invention. The disclosed packaged filter uses a vertical resonator composed of an interdigital capacitor and a high-impedance line inductor, and thus the packaged filter is extremely small in size. In the disclosed packaged filter, adjacent resonators are coupled in the same layer and are arranged in the horizontal direction, so that the stop band rejection degree is reduced due to the introduction of near-field coupling, and the volume of the packaged filter is increased;
3) Chinese patent with application number CN201210042080.8 discloses a package interconnection structure of TSV (TSV) and TGV (Through Glass Via, TGV) Through holes. Near-field coupling is suppressed by adding an EBG (Electromagnetic Band Gap) Electromagnetic Band Gap structure, and then passband impedance matching is improved. The disclosed packaging interconnection structure is a classic metal through hole structure, the structure is small in size, parasitic inductance effects exist, interconnection mismatch and interconnection loss are easily introduced, and only a single function of interconnection can be achieved.
In summary, in the disclosed packaged filter, no matter whether quasi-lumped resonators or distributed resonators are used, since it is not easy to implement the staggered coupling between the resonators, the resonators are generally arranged in a horizontal manner in the package, thereby resulting in a generally large size of the packaged filter, and as the number of resonators increases, the area of the packaged filter is multiplied. Thus, the disclosed package filter is generally not suitable for use in a package interconnect structure due to its large size. In general, package filters and package interconnect structures are to be improved in the following respects: 1) Because the resonators are coupled in the same layer and the packaged resonators are horizontally arranged, the packaging size is larger; 2) The problem of near field coupling of adjacent structures within the package is severe; 3) The package interconnect structure is functionally simplex and introduces interconnect mismatch.
Disclosure of Invention
The technical problem to be solved by the present invention is to overcome the disadvantages of the prior art and to provide a vertically stacked package filter, which can further be used as a broadband interconnect structure in a package. Vertical resonators are first constructed using quasi-lumped capacitance, inductance, and vertical stacking of multiple vertical resonators in a package can be achieved by inventively proposing split-level coupling. Therefore, the length and width of the packaging circuit are not increased along with the increase of the number of the packaging resonators, and further the miniaturization of the packaging circuit is realized, and the length and width of the packaging circuit are generally less than 0.1 waveguide wavelength. In addition, the resonator structures are vertically arranged in the package, so that the vertically stacked package filter provided by the invention can effectively reduce the near-field coupling between different resonators, and the rejection of the upper stop band and the lower stop band is greater than 25dB; and finally, the two functions of packaging interconnection and filtering are realized, and the system integration level is improved.
The invention adopts the following technical scheme for solving the technical problems:
the vertically stacked package filter comprises an input feeder line, an output feeder line and first to Nth vertical resonators, wherein N is a natural number greater than 1, the (i + 1) th vertical resonator is positioned above the ith vertical resonator, N is greater than i and is greater than or equal to 1, and i is an integer; each vertical resonator comprises a vertical capacitor and a high-impedance line inductor, wherein the vertical capacitor in each vertical resonator is positioned above the high-impedance line inductor or the vertical capacitor is positioned below the high-impedance line inductor; two ends of a vertical capacitor in each vertical resonator are respectively connected with two ends of a high-impedance line inductor; the adjacent vertical resonators are interconnected in a staggered coupling mode, the input feeder line is connected with the first vertical resonator, and the output feeder line is connected with the Nth vertical resonator.
As a further optimization scheme of the vertically stacked package filter, the staggered-layer coupling mode refers to: the vertical capacitor is coupled to the vertical capacitor stagger layer, or the vertical capacitor is coupled to the high impedance line inductance stagger layer, or the high impedance line inductance is coupled to the high impedance line inductance stagger layer.
As a further optimization scheme of the vertically stacked packaged filter, when N is greater than 2, the length and width dimensions of the N vertical resonators in the horizontal direction do not become larger with the increase of N.
As a further optimization scheme of the vertically stacked packaged filter according to the present invention, the first to nth vertical capacitors are MIM capacitors, MOM capacitors or interdigital capacitors; when the first to Nth vertical capacitors are interdigital capacitors, the number of digits is a natural number greater than 0, and when the number of digits is 1, the first to Nth vertical capacitors are regarded as split ring resonators.
As a further optimized solution of the vertically stacked package filter according to the present invention, the package filter further includes a plurality of rf grounds, the length of the rf ground is smaller than the length of the package medium in the horizontal direction, or the width of the rf ground is smaller than the width of the package medium in the horizontal direction.
As a further optimized solution of the vertically stacked package filter according to the present invention, there are at least 2 rf grounds, and there are 1 rf ground above the first vertical resonator and 1 rf ground below the nth vertical resonator.
Compared with the prior art, the invention adopting the technical scheme has the following technical effects:
(1) The packaging resonators are coupled in a staggered mode, and the packaging resonators are arranged in a vertical mode, so that the overall size is not increased along with the increase of the number of the packaging resonators;
(2) The packaged resonators are vertically arranged, so that near-field coupling among different resonators is effectively reduced, and the suppression of an upper stop band and a lower stop band is more than 25dB;
(3) The packaging filter provided by the invention can be further used as a packaging interconnection structure, and compared with the traditional TSV or TGV interconnection structure, the packaging interconnection structure provided by the invention can simultaneously realize two functions of filtering and interconnection, and is favorable for improving the system integration level.
Drawings
Fig. 1 is a simplified structural schematic diagram of a second-order packaged filter provided in embodiment 1 of the present invention.
Fig. 2 is a schematic structural diagram of a second-order packaged filter provided in embodiment 2 of the present invention.
FIG. 3 is a simulation plot of scattering parameter versus frequency for example 2 of the present invention.
Fig. 4 is a simplified structural diagram of a fourth-order packaged filter according to embodiment 3 of the present invention.
Fig. 5 is a simplified structural diagram of a package-based interconnect structure provided in embodiment 4 of the present invention.
Fig. 6 is a schematic diagram of a vertically stacked package filter.
The reference numerals in the figures are to be interpreted as:
001-one input feed, 002-one output feed, 100-a first vertical resonator, 101-a first vertical capacitor, 102-a first high impedance line inductance, 200-a second vertical resonator, 201-a second vertical capacitor, 202-a second high impedance line inductance, 300-a third vertical resonator, N00-an nth vertical resonator, 103-an input feed, 104-an input GSG (group-signal-Ground) port, 105-a first radio frequency Ground, 010-LTCC package medium, 203-an output feed, 204-an output GSG port, 205-a second radio frequency Ground, 301-a third vertical capacitor, 302-a third high impedance line inductance, 400-a fourth vertical resonator, 401-a fourth vertical capacitor, 402-a fourth high impedance line inductance, 151-a coupled vertical resonator group, 152-an upper interconnect, 153-an upper interconnect, 154-a lower interconnect, 155-a lower interconnect, 156-package medium, M1 to M10 are all metal layers.
Detailed Description
The technical scheme of the invention is further explained in detail by combining the attached drawings:
in order to make the implementation objects, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be described in more detail below with reference to the accompanying drawings in the embodiments of the present invention.
Example 1
As shown in fig. 1, a vertically stacked package filter adopts a low temperature co-fired ceramic process, a dielectric material is Ferro A6-M, the thickness of each dielectric layer is 94um, and the relative dielectric constant is 5.9; the metal layer is 10um thick, and the material is copper.
A vertically stacked package filter includes a first vertical resonator 100, a second vertical resonator 200, the first vertical resonator 100 including a first vertical capacitor 101 and a first high impedance line inductance 102, the second vertical resonator 200 including a second vertical capacitor 201 and a second high impedance line inductance 202;
the first vertical resonator 100 is located in the metal layers M1 to M5, wherein the first vertical capacitor 101 is located in the metal layers M1 to M3, the first high-impedance line inductor 102 is located in the metal layers M4 to M5, the second vertical resonator 200 is located in the metal layers M6 to M10, wherein the second vertical capacitor 201 is located in the metal layers M8 to M9, and the second high-impedance line inductor 202 is located in the metal layers M6 to M7; the first vertical resonator 100 is located above the second vertical resonator 200, wherein the first vertical capacitor 101 is located above the first high-impedance line inductor 102, and both ends of the first vertical capacitor 101 are connected to both ends of the first high-impedance line inductor 102; the second vertical capacitor 201 is located below the second high-impedance line inductor 202, and two ends of the second vertical capacitor 201 are connected with two ends of the second high-impedance line inductor 202;
the first vertical resonator 100 and the second vertical resonator 200 are interconnected by a first high-impedance line inductor 102 and a second high-impedance line inductor 202 in a staggered coupling manner, an input feeder 001 is located in the metal layer M1 and interconnected with the first vertical capacitor 101, and an output feeder 002 is located in the metal layer M10 and interconnected with the second vertical capacitor 201.
Example 2
As shown in fig. 2, a vertically stacked package filter includes a first vertical resonator 100, an input feed line 103, an input GSG (group-signal-Ground) port 104, a first radio frequency Ground 105, a second vertical resonator 200, an output feed line 203, an output GSG port 204, a second radio frequency Ground 205, an LTCC package medium 010. Wherein, the first vertical resonator 100 includes a first vertical capacitor 101 and a first high impedance line inductor 102; the second vertical resonator 200 includes a second vertical capacitor 201 and a second high impedance line inductance 202.
The first radio frequency ground is located above the first vertical resonator, the input GSG port is located above the first radio frequency ground, the second radio frequency ground is located below the second vertical resonator, and the output GSG port 012 is located below the second radio frequency ground;
in order to avoid the interference of the cavity resonance to the stop band rejection of the packaging circuit, the dimensions of the first radio frequency ground 105 and the second radio frequency ground 205 are smaller than the dimension of the LTCC packaging medium 010 in the horizontal direction. The input feed line 103 is connected with the first vertical resonator 100 and is connected to the top metal of the first vertical capacitor 101; an output feed line 203 is connected to the second vertical resonator 200 and to the bottom metal of the second vertical capacitor 102. The first vertical resonator 100 is located right above the second vertical resonator 200, two ends of the first vertical capacitor 101 are connected to two ends of the first high-impedance line inductor 102, and two ends of the second vertical capacitor 201 are connected to two ends of the second high-impedance line inductor 202. The first vertical capacitor 101, the second vertical capacitor 201 and the third vertical capacitor are interdigital capacitors with the number of digits equal to 3, and the interdigital capacitors are distributed on the three metal layers; the first to second high- impedance line inductors 102 and 202 are each composed of a metalized through hole and a high-impedance microstrip line, and the first high-impedance line inductor 102 and the second high-impedance line inductor 202 are interconnected in a staggered-layer coupling manner.
The package size of the package filter is 0.9 mm × 1.2 mm, and the core circuit size is 0.1 mm × 0.4 mm, that is, the electrical size is 0.02 waveguide wavelength × 0.09 waveguide wavelength (waveguide wavelength at the operating frequency). Compared with the disclosed packaging filter, the packaging filter disclosed by the invention has the advantages that the length and width dimensions are minimum;
FIG. 3 is a simulation plot of scattering parameter versus frequency for example 2 of the present invention. As shown in fig. 3, the center frequency of the packaged filter disclosed in example 2 of the present invention is 27.5ghz, the bandwidth of 3dB is 18%, and the minimum insertion loss is 1.0dB. I S 11 I is the return loss of the packaging filter, two transmission poles are arranged in a pass band, and the return loss in the band is better than-15 dB; i S 12 And | is the transmission coefficient of the packaging filter, the stop band rejection degree of the lower stop band is more than 44dB, and the stop band rejection degree of the upper stop band is more than 29dB. Compared with the prior art, the package filter provided by the embodiment 2 of the present invention realizes a minimum size and a higher stop band rejection degree.
Example 3
As shown in fig. 4, a vertically stacked package filter includes a first vertical resonator 100, a second vertical resonator 200, a third vertical resonator 300, a fourth vertical resonator 400;
the first vertical resonator 100 includes a first vertical capacitor 101 and a first high-impedance line inductor 102, both ends of the first vertical capacitor 101 are connected to both ends of the first high-impedance line inductor 102, the second vertical resonator 200 includes a second vertical capacitor 201 and a second high-impedance line inductor 202, both ends of the second vertical capacitor 201 are connected to both ends of the second high-impedance line inductor 202, the third vertical resonator 300 includes a third vertical capacitor 301 and a third high-impedance line inductor 302, both ends of the third vertical capacitor 301 are connected to both ends of the third high-impedance line inductor 302, the fourth vertical resonator 400 includes a fourth vertical capacitor 401 and a fourth high-impedance line inductor 402, and both ends of the fourth vertical capacitor 401 are connected to both ends of the fourth high-impedance line inductor 402.
The first vertical resonator 100 is located right above the second vertical resonator 200, the second vertical resonator 200 is located right above the third vertical resonator 300, the third vertical resonator 300 is located right above the fourth vertical resonator 400, the first vertical resonator 100 and the second vertical resonator 200 are interconnected in a mode of staggered coupling of the first high-impedance line inductor 102 and the second high-impedance line inductor 202, the second vertical resonator 200 and the third vertical resonator 300 are interconnected in a mode of staggered coupling of the second vertical capacitor 201 and the third vertical capacitor 301, and the third vertical resonator 300 and the fourth vertical resonator 400 are interconnected in a mode of staggered coupling of the third high-impedance line inductor 302 and the fourth high-impedance line inductor 402.
The input feed line 001 is interconnected with the first vertical capacitor 101 and the output feed line 002 is interconnected with the fourth vertical capacitor 401.
The first vertical resonator 100 and the second vertical resonator 200 are vertically arranged by means of mutual coupling of high-impedance line inductance and high-impedance line inductance, the second vertical resonator 200 and the third vertical resonator 300 are vertically arranged by means of mutual coupling of vertical capacitors and vertical capacitors, and the third vertical resonator 300 and the fourth vertical resonator 400 are vertically arranged by means of mutual coupling of high-impedance line inductance and high-impedance line inductance. Embodiment 3 can have up to 4 in-band transmission poles within the pass band.
The rest of this embodiment is the same as embodiment 1, and the radio frequency ground and the input/output port setting thereof can refer to embodiment 1, and embodiment 3 is a further improvement of embodiment 1.
Example 4
Embodiment 4 is a broadband package interconnection structure based on embodiments 1 and 3, and a schematic structural diagram of the broadband package interconnection structure is shown in fig. 5. Including a group of coupled vertical resonators 151, upper pads 152, upper interconnect lines 153, lower pads 154, lower interconnect lines 155, and a packaging medium 156. Two ends of the upper interconnection 153 are connected to the upper end of the coupled vertical resonator group 151 and the upper pad 152, two ends of the lower interconnection 155 are connected to the upper end of the coupled vertical resonator group 151 and the lower pad 154, the upper pad 152 serves as a connection pad for connecting a circuit and a module above the package, and the lower pad 154 serves as a connection pad for connecting a circuit and a module below the package.
The wideband interconnect structure provided in this embodiment 4 has at most 4 in-band transmission poles in the passband, and the number of in-band transmission poles can be further reduced or increased according to the bandwidth and transmission loss requirements of the package interconnect. In addition, the package interconnection structure disclosed in this embodiment 4 can achieve an in-band return loss superior to 15dB in the pass band, overcomes the disadvantage that the conventional TSV or TGV interconnection structure affects system matching, and can additionally provide a filtering function, further remove system redundancy, and improve the integration level and overall performance.
As shown in fig. 6, a vertically stacked package filter includes an input feed line, an output feed line, and first to nth vertical resonators N00, N being a natural number greater than 1, wherein an (i + 1) th vertical resonator is located above an ith vertical resonator, N > i ≧ 1 and i being an integer; each vertical resonator comprises a vertical capacitor and a high-impedance line inductor, wherein the vertical capacitor in each vertical resonator is positioned above the high-impedance line inductor or the vertical capacitor is positioned below the high-impedance line inductor; two ends of a vertical capacitor in each vertical resonator are respectively connected with two ends of a high-impedance line inductor; the adjacent vertical resonators are interconnected in a staggered coupling mode, the input feeder line is connected with the first vertical resonator, and the output feeder line is connected with the Nth vertical resonator.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention.
Claims (5)
1. A vertically stacked package filter is characterized by comprising an input feeder line, an output feeder line and first to Nth vertical resonators, wherein N is a natural number greater than 1, the (i + 1) th vertical resonator is positioned above the ith vertical resonator, N is greater than or equal to i and is an integer; each vertical resonator comprises a vertical capacitor and a high-impedance line inductor, wherein the vertical capacitor in each vertical resonator is positioned above the high-impedance line inductor or the vertical capacitor is positioned below the high-impedance line inductor; two ends of a vertical capacitor in each vertical resonator are respectively connected with two ends of a high-impedance line inductor; the adjacent vertical resonators are interconnected in a staggered-layer coupling mode, an input feeder line is connected with the first vertical resonator, and an output feeder line is connected with the Nth vertical resonator;
the mode of the split-level coupling refers to that: the vertical capacitor is coupled to the vertical capacitor stagger layer, or the vertical capacitor is coupled to the high impedance line inductance stagger layer, or the high impedance line inductance is coupled to the high impedance line inductance stagger layer.
2. The vertically stacked packaged filter of claim 1, wherein when N is greater than 2, the length and width dimensions of the N vertical resonators in the horizontal direction do not become larger as N increases.
3. The vertically stacked packaged filter of claim 1, wherein the first through nth vertical capacitors are metal-insulator-metal (MIM) capacitors, metal-oxide-metal (MOM) capacitors, or interdigital capacitors; when the first to Nth vertical capacitors are interdigital capacitors, the number of digits is a natural number greater than 0, and when the number of digits is 1, the first to Nth vertical capacitors are regarded as split ring resonators.
4. The vertically stacked packaged filter of claim 1, further comprising a plurality of rf grounds, wherein the packaged filter is disposed in the packaging medium, and wherein the rf grounds have a length less than a length of the packaging medium in a horizontal direction or a width less than a width of the packaging medium in the horizontal direction.
5. A vertically stacked package filter according to claim 1, wherein there are at least 2 rf grounds, 1 rf ground above the first vertical resonator and 1 rf ground below the nth vertical resonator.
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| CN115207593B (en) * | 2022-06-13 | 2023-07-04 | 苏州博海创业微系统有限公司 | Multilayer dielectric resonator and dielectric filter |
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| CN106207331A (en) * | 2016-07-06 | 2016-12-07 | 南京理工大学 | High-performance tunable filter based on Zero order resonator |
| CN110011014A (en) * | 2019-04-26 | 2019-07-12 | 深圳大学 | Waveguide filter and its manufacturing method |
| CN110277616A (en) * | 2019-06-27 | 2019-09-24 | 南京理工大学 | Swastika type dual-pass band-pass filter is minimized based on vertical folding |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106207331A (en) * | 2016-07-06 | 2016-12-07 | 南京理工大学 | High-performance tunable filter based on Zero order resonator |
| CN110011014A (en) * | 2019-04-26 | 2019-07-12 | 深圳大学 | Waveguide filter and its manufacturing method |
| CN110277616A (en) * | 2019-06-27 | 2019-09-24 | 南京理工大学 | Swastika type dual-pass band-pass filter is minimized based on vertical folding |
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