CN113322509A - Method for growing silicon carbide powder particles - Google Patents

Method for growing silicon carbide powder particles Download PDF

Info

Publication number
CN113322509A
CN113322509A CN202110584891.XA CN202110584891A CN113322509A CN 113322509 A CN113322509 A CN 113322509A CN 202110584891 A CN202110584891 A CN 202110584891A CN 113322509 A CN113322509 A CN 113322509A
Authority
CN
China
Prior art keywords
silicon carbide
carbide powder
temperature
powder
molten salt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110584891.XA
Other languages
Chinese (zh)
Inventor
樊子民
王晓刚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xi'an Boer New Material Co ltd
Original Assignee
Xi'an Boer New Material Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xi'an Boer New Material Co ltd filed Critical Xi'an Boer New Material Co ltd
Priority to CN202110584891.XA priority Critical patent/CN113322509A/en
Publication of CN113322509A publication Critical patent/CN113322509A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/12—Salt solvents, e.g. flux growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

The invention discloses a method for growing silicon carbide powder particles, which comprises the following steps: heating soluble inorganic salt to a melting temperature, stirring, cooling, grinding and sieving to obtain molten salt powder; secondly, matching the molten salt powder with the silicon carbide powder and uniformly mixing to obtain a mixture; thirdly, preserving the temperature of the mixture above the eutectic temperature of the molten salt powder to obtain a melt; and fourthly, cooling the melt to room temperature, grinding, washing, standing and drying to obtain the grown silicon carbide powder particles. The invention adopts soluble inorganic salt as a molten salt system, and the soluble inorganic salt is mixed and co-melted with the silicon carbide powder, so that small silicon carbide particles are preferentially dissolved and precipitated on large silicon carbide particles to grow gradually, and simultaneously, partial impurities are removed through molten salt, thereby being beneficial to the growth of the silicon carbide crystals and improving the quality purity of the grown silicon carbide powder particles.

Description

Method for growing silicon carbide powder particles
Technical Field
The invention belongs to the technical field of silicon carbide powder, and particularly relates to a method for growing silicon carbide powder particles.
Background
The silicon carbide has the excellent characteristics of high hardness, good high-temperature strength, oxidation resistance, good wear resistance, large thermal conductivity, small thermal expansion coefficient, chemical corrosion resistance and the like, and is widely applied to high-end technical fields of metallurgy, aerospace, machinery, energy, environmental protection, chemical industry, medicine, electronic information, semiconductors, military industry and the like.
At present, the methods for preparing (including growing up) silicon carbide are mainly classified into a solid phase method (e.g., Acheson method, carbothermic method, self-propagating synthesis method), a gas phase method (e.g., chemical vapor deposition method, sublimation method, chemical combustion method, laser induction method, plasma method), and a liquid phase method (e.g., sol-gel method, hydrothermal reaction method, precipitation method, solvent evaporation method, etc.). The solid phase method has the advantages of rich raw materials, low price, simple preparation process, easy large-scale production and low product purity; the gas phase method and the liquid phase method have high requirements on the granularity and the purity of raw materials, the purity is 99 percent, the raw materials are expensive, the granularity is from nanometer to submicron, and the large-scale industrial production is difficult to realize.
Disclosure of Invention
The present invention is directed to provide a method for growing silicon carbide powder particles, which overcomes the above-mentioned shortcomings of the prior art. The method adopts soluble inorganic salt as a molten salt system, and the soluble inorganic salt is mixed and co-melted with the silicon carbide powder, so that small silicon carbide particles are preferentially dissolved and precipitated on large silicon carbide particles to grow gradually, and meanwhile, part of impurities can be removed through molten salt, thereby being beneficial to the growth of the silicon carbide crystals and improving the quality purity of the grown silicon carbide powder particles.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows: a method for growing silicon carbide powder particles is characterized by comprising the following steps:
step one, molten salt preparation: heating soluble inorganic salt to a melting temperature, stirring for 5-30 min, cooling, grinding and sieving, and collecting undersize to obtain molten salt powder;
step two, mixing and proportioning: proportioning and uniformly mixing the fused salt powder obtained in the step one and the silicon carbide powder to obtain a mixture;
step three, dissolving and growing up crystals: putting the mixture obtained in the step two into a crucible, putting the crucible into a high-temperature resistance furnace, and preserving the heat above the eutectic temperature of the molten salt powder to obtain a melt;
step four, product treatment: and (3) cooling the melt obtained in the third step to room temperature, taking out and grinding the melt, then stirring and washing the melt for multiple times in a constant-temperature water bath by using distilled water, standing the mixture, pouring out a clear washing liquid, and drying the rest precipitate to obtain the grown silicon carbide powder particles.
The method comprises the steps of melting, cooling and grinding the molten salt to prepare molten salt powder, then uniformly mixing the molten salt powder and silicon carbide powder, keeping the temperature above the eutectic temperature, preferentially dissolving small silicon carbide particles based on a dissolution and precipitation mechanism, precipitating and gradually growing on the large silicon carbide particles to form large silicon carbide crystal particles with molten salt coated around, precipitating and aggregating to form a melt, grinding the melt to fully disperse the crystal particles, washing and dissolving to remove the molten salt coated around the crystal particles to expose the large silicon carbide crystal particles, and drying to obtain the grown silicon carbide powder particles. Meanwhile, impurities in the silicon carbide powder are easy to react with the molten salt in the heat preservation process and then removed through subsequent treatment, so that the quality and purity of the product are improved.
The screen used for the fine screening in step one of the present invention is usually 400 mesh.
The method for growing the silicon carbide powder particles is characterized in that in the step one, the soluble inorganic salt is chloride.
The method for growing the silicon carbide powder particles is characterized in that the chloride salt is NaCl, KCl or MgCl2And CaCl2One or more than two of them.
The method for growing the silicon carbide powder particles is characterized in that the chloride salt is MgCl2And CaCl2According to the following steps of 1: 1-2 in mass ratio.
The method for growing the silicon carbide powder particles is characterized in that the melting temperature in the first step is higher than the eutectic temperature in the third step. Typically, the melting temperature in step one is 20 ℃ higher than the eutectic temperature in step three.
The method for growing the silicon carbide powder particles is characterized in that in the second step, the silicon carbide powder is alpha-SiC powder or beta-SiC powder.
The method for growing the silicon carbide powder particles is characterized in that the mass ratio of the molten salt powder to the silicon carbide powder in the second step is 1-2: 1.
The method for growing the silicon carbide powder particles is characterized in that the heat preservation temperature in the third step is 700-850 ℃, and the heat preservation time is 4-24 hours.
The method for growing the silicon carbide powder particles is characterized in that the washing times in the fourth step are 25-30 times, the drying temperature is 80-120 ℃, and the drying time is 8-24 hours.
Compared with the prior art, the invention has the following advantages:
1. the method adopts soluble inorganic salt as a molten salt system, and sequentially carries out the processes of molten salt preparation and mixing proportion, crystal dissolution and growth, product treatment and the like, so that small silicon carbide particles are preferentially dissolved and are precipitated on the large silicon carbide particles to gradually grow up, and meanwhile, part of impurities are removed through the molten salt, thereby being beneficial to the growth of silicon carbide crystals and improving the quality and purity of the grown silicon carbide powder particles.
2. The process of gradually growing up the silicon carbide powder particles is more uniform, the size of the formed large-particle sediment of the silicon carbide crystal coated with the fused salt at the periphery is uniform, the dispersity is good, and the size uniformity of the product, namely the grown silicon carbide powder particles, is improved.
3. The invention effectively controls the particle size and the shape of the grown silicon carbide powder particles by controlling the variety and the proportion of the soluble inorganic salt and the temperature and the time for preparing the melt.
4. Compared with the conventional silicon carbide crystal growth process which adopts the crystal growth temperature of more than 1800 ℃ and even more than 2300 ℃, the method realizes the growth of silicon carbide powder particles at lower temperature, greatly reduces the growth temperature of silicon carbide particles and obviously saves energy.
The technical solution of the present invention is further described in detail by examples below.
Detailed Description
In the particle size parameters of the silicon carbide powder adopted in the embodiments 1 to 3 of the present invention, D50 and D90 were 11.89 μm and 17.96 μm, respectively, and the bulk density was 1.18g/cm3。
Example 1
The embodiment comprises the following steps:
step one, molten salt preparation: heating soluble inorganic salt to 760 ℃ and stirring for 30min, cooling, grinding, sieving with a 400-mesh sieve, and collecting undersize to obtain molten salt powder; the soluble inorganic salt is formed by MgCl2And CaCl2The components are mixed according to the mass ratio of 1: 1;
step two, mixing and proportioning: proportioning the molten salt powder obtained in the step one and silicon carbide powder according to the mass ratio of 1:5, and uniformly mixing to obtain a mixture; the silicon carbide powder has a D50-11.89 [ mu ] m and a D90-17.96 [ mu ] m, and a bulk density of 1.32g/cm3beta-SiC powder of (1);
step three, dissolving and growing up crystals: putting the mixture obtained in the step two into a corundum crucible, putting the corundum crucible into a high-temperature resistance furnace, and keeping the temperature at 700 ℃ for 24 hours to obtain a melt;
step four, product treatment: cooling the melt obtained in the third step to room temperature, taking out and grinding, then stirring and washing with distilled water for 25 times in a constant-temperature water bath at 60 ℃, pouring out clear washing liquid after standing, and drying the rest precipitate in a drying oven at 80 ℃ for 24 hours to obtain the grown silicon carbide powder particles.
The grown silicon carbide powder particles obtained in this example were found to have a D50 of 13.22 μm, a D90 of 24.60 μm, and a bulk density of 1.32g/cm3The particle diameter and bulk density were improved as compared with the raw material silicon carbide powder used in this example.
The soluble inorganic salts in this example may be replaced with other than MgCl2And CaCl2NaCl, KCl, MgCl other than combinations2And CaCl2One or more than two of them.
Example 2
The embodiment comprises the following steps:
step one, molten salt preparation: heating soluble inorganic salt to 860 deg.C and stirring for 10min, cooling, grinding, sieving with 400 mesh sieve, and collecting the undersize product to obtain molten salt powder; the soluble inorganic salt is formed by MgCl2And CaCl2The components are mixed according to the mass ratio of 1: 1.5;
step two, mixing and proportioning: will be described in detailThe molten salt powder obtained in the first step and silicon carbide powder are proportioned according to the mass ratio of 1:5 and are uniformly mixed to obtain a mixture; the silicon carbide powder has a D50-11.89 [ mu ] m and a D90-17.96 [ mu ] m, and a bulk density of 1.32g/cm3beta-SiC powder of (1);
step three, dissolving and growing up crystals: putting the mixture obtained in the step two into a corundum crucible, putting the corundum crucible into a high-temperature resistance furnace, and keeping the temperature at 800 ℃ for 14 hours to obtain a melt;
step four, product treatment: cooling the melt obtained in the third step to room temperature, taking out and grinding, then stirring and washing with distilled water for 25 times in a constant-temperature water bath at 60 ℃, pouring out clear washing liquid after standing, and drying the rest precipitate in a drying oven at 100 ℃ for 10 hours to obtain the grown silicon carbide powder particles.
The grown silicon carbide powder particles obtained in this example were found to have a D50 of 14.82 μm and a D90 of 37.59 μm, respectively, and a bulk density of 1.62g/cm3The particle diameter and bulk density were improved as compared with the raw material silicon carbide powder used in this example.
The soluble inorganic salts in this example may be replaced with other than MgCl2And CaCl2NaCl, KCl, MgCl other than combinations2And CaCl2One or more than two of them.
Example 3
The embodiment comprises the following steps:
step one, molten salt preparation: heating soluble inorganic salt to 860 deg.C and stirring for 5min, cooling, grinding, sieving with 400 mesh sieve, and collecting the undersize product to obtain molten salt powder; the soluble inorganic salt is formed by MgCl2And CaCl2The components are mixed according to the mass ratio of 1: 2;
step two, mixing and proportioning: proportioning the molten salt powder obtained in the step one and silicon carbide powder according to the mass ratio of 1:5, and uniformly mixing to obtain a mixture; the silicon carbide powder has a D50-11.89 [ mu ] m and a D90-17.96 [ mu ] m, and a bulk density of 1.32g/cm3beta-SiC powder of (1);
step three, dissolving and growing up crystals: putting the mixture obtained in the step two into a corundum crucible, putting the corundum crucible into a high-temperature resistance furnace, and keeping the temperature at 850 ℃ for 4 hours to obtain a melt;
step four, product treatment: cooling the melt obtained in the third step to room temperature, taking out and grinding the melt, then stirring and washing the melt for 30 times in a constant-temperature water bath at 60 ℃, standing the melt, pouring out a clear washing liquid, and drying the rest precipitate in a drying box for 4 hours at 120 ℃ to obtain the grown silicon carbide powder particles.
The particle size characteristics of the raw material silicon carbide powder and the obtained product, i.e., the grown silicon carbide powder particles, used in this example were measured, and the particle size characteristic parameters in the measurement results are shown in table 1.
TABLE 1
Figure RE-GDA0003144690060000061
In table 1, "D10" represents a particle size with a cumulative particle distribution of 10%, and "D20" represents a particle size with a cumulative particle distribution of 20%; "D50" represents a particle size with a cumulative particle distribution of 50%; "D75" represents a particle size with a cumulative particle distribution of 75%; "D90" represents a particle size with a cumulative particle distribution of 90%; "D (4, 3)" represents the volume fourth moment mean diameter of the particle; "D (3, 2)" represents the surface area volume average diameter of the particles; "SSA" means specific surface area.
As can be seen from table 1, the large silicon carbide powder particles obtained in this example had D50 ═ 26.12 μm and D90 ═ 48.77 μm, and had a bulk density of 1.82g/cm3Compared with the raw material silicon carbide powder adopted in the embodiment, the particle size and the bulk density of the silicon carbide powder are both improved; meanwhile, other particle size characteristic parameters D10, D250, D75, D (4,3) and D (3,2) of the grown silicon carbide powder particles obtained in the embodiment are all improved compared with the raw material silicon carbide powder, and SSA is greatly reduced compared with the raw material silicon carbide powder, which shows that the method of the invention successfully realizes the growth of the silicon carbide powder particles.
The soluble inorganic salts in this example may be replaced with other than MgCl2And CaCl2NaCl, KCl, MgCl other than combinations2And CaCl2One ofOne or more than two.
Example 4
The embodiment comprises the following steps:
step one, molten salt preparation: heating soluble inorganic salt to 860 deg.C and stirring for 5min, cooling, grinding, sieving with 400 mesh sieve, and collecting the undersize product to obtain molten salt powder; the soluble inorganic salt is formed by MgCl2And CaCl2The components are mixed according to the mass ratio of 1: 1.5;
step two, mixing and proportioning: proportioning the molten salt powder obtained in the step one and silicon carbide powder according to the mass ratio of 1:1, and uniformly mixing to obtain a mixture; the silicon carbide powder has a D50-11.89 [ mu ] m and a D90-17.96 [ mu ] m, and a bulk density of 1.32g/cm3The alpha-SiC powder of (1);
step three, dissolving and growing up crystals: putting the mixture obtained in the step two into a corundum crucible, putting the corundum crucible into a high-temperature resistance furnace, and keeping the temperature at 800 ℃ for 14 hours to obtain a melt;
step four, product treatment: cooling the melt obtained in the third step to room temperature, taking out and grinding, then stirring and washing with distilled water for 25 times in a constant-temperature water bath at 60 ℃, pouring out clear washing liquid after standing, and drying the rest precipitate in a drying oven at 100 ℃ for 10 hours to obtain the grown silicon carbide powder particles.
The grown silicon carbide powder particles obtained in this example were found to have a D50 of 15.52 μm and a D90 of 40.10 μm, respectively, and a bulk density of 1.73g/cm3The particle diameter and bulk density were improved as compared with the raw material silicon carbide powder used in this example.
The soluble inorganic salts in this example may be replaced with other than MgCl2And CaCl2NaCl, KCl, MgCl other than combinations2And CaCl2One or more than two of them.
Example 5
The embodiment comprises the following steps:
step one, molten salt preparation: heating soluble inorganic salt to 860 deg.C and stirring for 10min, cooling, grinding, sieving with 400 mesh sieve, and collecting the undersize product to obtain molten salt powder; the soluble inorganic salt is formed by MgCl2And CaCl2The components are mixed according to the mass ratio of 1: 1.5;
step two, mixing and proportioning: proportioning the molten salt powder obtained in the step one and silicon carbide powder according to the mass ratio of 1:2, and uniformly mixing to obtain a mixture; the silicon carbide powder has a D50-11.89 [ mu ] m and a D90-17.96 [ mu ] m, and a bulk density of 1.32g/cm3beta-SiC powder of (1);
step three, dissolving and growing up crystals: putting the mixture obtained in the step two into a corundum crucible, putting the corundum crucible into a high-temperature resistance furnace, and keeping the temperature at 800 ℃ for 14 hours to obtain a melt;
step four, product treatment: cooling the melt obtained in the third step to room temperature, taking out and grinding, then stirring and washing with distilled water for 25 times in a constant-temperature water bath at 60 ℃, pouring out clear washing liquid after standing, and drying the rest precipitate in a drying oven at 100 ℃ for 10 hours to obtain the grown silicon carbide powder particles.
The grown silicon carbide powder particles obtained in this example were found to have a D50 of 18.53 μm and a D90 of 41.55 μm, respectively, and a bulk density of 1.75g/cm3The particle diameter and bulk density were improved as compared with the raw material silicon carbide powder used in this example.
The soluble inorganic salts in this example may be replaced with other than MgCl2And CaCl2NaCl, KCl, MgCl other than combinations2And CaCl2One or more than two of them.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the present invention in any way. Any simple modification, change and equivalent changes of the above embodiments according to the technical essence of the invention are still within the protection scope of the technical solution of the invention.

Claims (9)

1. A method for growing silicon carbide powder particles is characterized by comprising the following steps:
step one, molten salt preparation: heating soluble inorganic salt to a melting temperature, stirring for 5-30 min, cooling, grinding and sieving, and collecting undersize to obtain molten salt powder;
step two, mixing and proportioning: proportioning and uniformly mixing the fused salt powder obtained in the step one and the silicon carbide powder to obtain a mixture;
step three, dissolving and growing up crystals: putting the mixture obtained in the step two into a crucible, putting the crucible into a high-temperature resistance furnace, and preserving the heat above the eutectic temperature of the molten salt powder to obtain a melt;
step four, product treatment: and (3) cooling the melt obtained in the third step to room temperature, taking out and grinding the melt, then stirring and washing the melt for multiple times in a constant-temperature water bath by using distilled water, standing the mixture, pouring out a clear washing liquid, and drying the rest precipitate to obtain the grown silicon carbide powder particles.
2. The method according to claim 1, wherein the soluble inorganic salt in step one is a chloride salt.
3. The method according to claim 2, wherein the chloride salt is NaCl, KCl, MgCl2And CaCl2One or more than two of them.
4. The method according to claim 3, wherein the chloride salt is formed from MgCl2And CaCl2According to the following steps of 1: 1-2 in mass ratio.
5. The method according to claim 1, wherein the melting temperature in step one is higher than the eutectic temperature in step three.
6. The method according to claim 1, wherein the silicon carbide powder in the second step is α -SiC powder or β -SiC powder.
7. The method for growing silicon carbide powder particles according to claim 1, wherein the mass ratio of the molten salt powder to the silicon carbide powder in the second step is 1-2: 1.
8. The method for growing silicon carbide powder particles according to claim 1, wherein the temperature for the heat preservation in step three is 700 ℃ to 850 ℃ and the heat preservation time is 4h to 24 h.
9. The method for growing silicon carbide powder particles according to claim 1, wherein the washing in step four is performed 25 to 30 times, the drying temperature is 80 to 120 ℃, and the drying time is 8 to 24 hours.
CN202110584891.XA 2021-05-27 2021-05-27 Method for growing silicon carbide powder particles Pending CN113322509A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110584891.XA CN113322509A (en) 2021-05-27 2021-05-27 Method for growing silicon carbide powder particles

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110584891.XA CN113322509A (en) 2021-05-27 2021-05-27 Method for growing silicon carbide powder particles

Publications (1)

Publication Number Publication Date
CN113322509A true CN113322509A (en) 2021-08-31

Family

ID=77421755

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110584891.XA Pending CN113322509A (en) 2021-05-27 2021-05-27 Method for growing silicon carbide powder particles

Country Status (1)

Country Link
CN (1) CN113322509A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5863325A (en) * 1995-05-31 1999-01-26 Bridgestone Corporation Process for producing high purity silicon carbide powder for preparation of a silicon carbide single crystal and single crystal
JP2011102205A (en) * 2009-11-10 2011-05-26 Sumitomo Osaka Cement Co Ltd METHOD FOR CONTROLLING PARTICLE SIZE OF alpha-SILICON CARBIDE POWDER AND SILICON CARBIDE SINGLE CRYSTAL
JP2018158871A (en) * 2017-03-23 2018-10-11 太平洋セメント株式会社 Silicon carbide powder, method for producing the same, and method for producing silicon carbide single crystal

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5863325A (en) * 1995-05-31 1999-01-26 Bridgestone Corporation Process for producing high purity silicon carbide powder for preparation of a silicon carbide single crystal and single crystal
JP2011102205A (en) * 2009-11-10 2011-05-26 Sumitomo Osaka Cement Co Ltd METHOD FOR CONTROLLING PARTICLE SIZE OF alpha-SILICON CARBIDE POWDER AND SILICON CARBIDE SINGLE CRYSTAL
JP2018158871A (en) * 2017-03-23 2018-10-11 太平洋セメント株式会社 Silicon carbide powder, method for producing the same, and method for producing silicon carbide single crystal

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
李艳霞等: "钙镁复合氯盐对β-SiC整形的影响", 《硅酸盐通报》 *

Similar Documents

Publication Publication Date Title
CN104058372B (en) A kind of preparation method of hexagonal boron nitride nanosheet
CN105883780B (en) A kind of method for preparing high-purity crystalline flake graphite
CN105236363B (en) A kind of method for preparing the spherical silicon nitride powder of microscale-nanoscale
Chen et al. Synthesis of rod-like ZrB2 crystals by boro/carbothermal reduction
CN110606511A (en) Ammonium rhenate with uniform particle size and preparation method thereof
CN113264774A (en) SiC crystal synthesized by seed induced microwave and preparation method thereof
CN105523528A (en) Method for preparing boron nitride nanosheet by using eutectic salt to strip boron nitride powder at high temperature
CN103979566B (en) A kind of vanadium diboride raw powder's production technology
CN108928822B (en) Method for preparing molybdenum carbide by gaseous reduction of molybdenum oxide
CN113322509A (en) Method for growing silicon carbide powder particles
CN113798504A (en) Preparation method of rare earth oxide dispersion-enhanced tungsten powder for 3D printing
CN110723732B (en) Preparation method of super-dispersed nano-diamond suspension
CN114835124B (en) Preparation method of nano silicon carbide particles based on ferric nitrate shape regulator
CN105777128A (en) Method for synthesizing hafnium carbide ceramic powder at low temperature through assisting of molten salts and magnesiothermic reduction
CN114032607B (en) Method for preparing zirconium carbide whisker by adopting zirconium carbide seed crystal
Zhang et al. Influence of nitrogen on the synthesis and nucleation ability of TiCx in Al–Ti–C master alloy
CN111533131B (en) Based on CaCl2Preparation method of nano silicon carbide particles of shape regulator
CN110790302B (en) In2O3particles/In2O3Method for synthesizing nanobelt and obtained product
CN103757703B (en) A kind of High-purity large-size silicon carbide single crystal and preparation technology thereof
CN110272623B (en) Preparation method of polyamide flame-retardant powder material for laser sintering
CN108996558B (en) Synthetic method of NiO/ZnO multi-cavity flower-shaped structure and product thereof
CN108866633B (en) Nano VC crystal whisker and preparation method thereof
CN105543956B (en) A kind of preparation method of the hyperbranched platinum nano-colloid of monocrystalline state
JPH03215399A (en) Method for preparing fibrous aluminum nitride
CN115948805A (en) Platy ultra-coarse single crystal tungsten carbide and preparation method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20210831

RJ01 Rejection of invention patent application after publication