CN113316326B - Roll-to-roll copper foil plasma processing method and device and computer equipment - Google Patents
Roll-to-roll copper foil plasma processing method and device and computer equipment Download PDFInfo
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- CN113316326B CN113316326B CN202110454552.XA CN202110454552A CN113316326B CN 113316326 B CN113316326 B CN 113316326B CN 202110454552 A CN202110454552 A CN 202110454552A CN 113316326 B CN113316326 B CN 113316326B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
- H05K3/383—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by microetching
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Abstract
The invention discloses a roll-to-roll copper foil plasma processing method, a roll-to-roll copper foil plasma processing device and computer equipment. Wherein the method comprises the following steps: attaching a copper foil sheet on a substrate in an adhesion mode to form a copper foil layer on the front surface and the back surface, performing sealant protection on the periphery of the front surface of the copper foil layer, vacuumizing gas encapsulated between the back surface of the copper foil layer and the front surface of the substrate after sealant protection, and performing plasma etching on the front surface of the vacuumized copper foil layer in a roll-to-roll mode. In this way, can get up through this the gas encapsulation of gluing between the copper foil layer at this back and the positive base plate, be convenient for with the gas evacuation of this encapsulation for the internal and external pressure difference that this copper foil layer received tends to zero, can realize reducing the copper foil layer and outwards expand the condition of bulging appearing under the effect of internal and external pressure difference, improves product quality.
Description
Technical Field
The invention relates to the technical field of printed circuit boards, in particular to a roll-to-roll copper foil plasma processing method, a roll-to-roll copper foil plasma processing device and computer equipment.
Background
In recent years, the development of electronic products with small size, light weight and complex functions is on a day. Printed Circuit Boards (PCBs) are essential basic components of electronic products, and provide interconnection of electrical signals and support for electronic components. The printed circuit board is a soul component of all electronic products, and plays a key role in the smart design of functions of precise electronic products and any peripheral accessory parts.
However, in the existing plasma treatment scheme for copper foil, generally, the copper foil layer and the surface of the substrate layer are laminated by a plasma method, and the copper foil layer is directly in pressure contact with the surface layer of the substrate layer, but the method of directly in pressure contact with the surface layer of the substrate layer of the copper foil layer is easy to generate an internal and external pressure difference, so that the copper foil layer often expands and bulges outwards under the action of the internal and external pressure difference, and the product quality is reduced.
Disclosure of Invention
In view of the above, the present invention provides a roll-to-roll plasma processing method, device, and computer apparatus for copper foil, which can reduce outward expansion and swelling of the copper foil layer under the action of the internal and external pressure difference, and improve the product quality.
According to an aspect of the present invention, there is provided a roll-to-roll copper foil plasma processing method including: adhering copper foil to the substrate in an adhesion manner to form front and back copper foil layers; sealing glue protection is carried out on the periphery of the front surface of the copper foil layer; vacuumizing the gas encapsulated between the back surface of the copper foil layer and the front surface of the substrate after being protected by the sealing compound; and performing plasma etching on the front surface of the vacuumized copper foil layer in a roll-to-roll mode.
Wherein, to the right side of copper foil layer seals and glues the protection, include: and sealing glue protection is carried out on the front surface of the copper foil layer by adopting an ultraviolet curing glue mode.
Wherein, adopt roll-to-roll mode, carry out plasma etching to the front of the copper foil layer after the evacuation, include: a dry film is pasted on the front surface of the copper foil layer after vacuum pumping, the dry film comprises a first surface and a second surface, a plurality of first pattern grooves extending in a first direction are formed on the first surface, a plurality of second pattern grooves extending in a second direction are formed on the second surface, a roll-to-roll mode is adopted, and the front surface of the copper foil layer after vacuum pumping is synchronously etched based on the first pattern grooves and the second pattern grooves.
Wherein, after the front surface of the vacuumized copper foil layer is subjected to plasma etching by adopting a roll-to-roll mode, the method further comprises the following steps: and configuring a dielectric layer on the front surface of the copper foil layer after the plasma etching.
Wherein, the configuring a dielectric layer on the front surface of the copper foil layer after the plasma etching comprises: and uniformly adding a pre-configured mixture of alkali liquor and dielectric filler on the front surface of the copper foil layer subjected to plasma etching, and naturally oxidizing in the atmosphere to obtain the dielectric layer.
According to another aspect of the present invention, there is provided a roll-to-roll copper foil plasma processing apparatus comprising: the device comprises an attaching module, a sealing glue module, a vacuumizing module and an etching module; the attaching module is used for attaching the copper foil sheet to the substrate in an adhering mode so as to form a front copper foil layer and a back copper foil layer; the adhesive sealing module is used for carrying out adhesive sealing protection on the periphery of the front surface of the copper foil layer; the vacuumizing module is used for vacuumizing the gas encapsulated between the back surface of the copper foil layer and the front surface of the substrate after being protected by the sealing adhesive; and the etching module is used for performing plasma etching on the front surface of the vacuumized copper foil layer in a roll-to-roll mode.
The glue sealing module is specifically used for: and sealing glue protection is carried out on the front surface of the copper foil layer by adopting an ultraviolet curing glue mode.
Wherein, the etching module is specifically used for: a dry film is pasted on the front surface of the vacuumized copper foil layer, the dry film comprises a first surface and a second surface, a plurality of first pattern grooves extending in the first direction are formed in the first surface, a plurality of second pattern grooves extending in the second direction are formed in the second surface, and plasma etching based on the first pattern grooves and the second pattern grooves is synchronously performed on the front surface of the vacuumized copper foil layer in a roll-to-roll mode.
Wherein, roll-to-roll copper foil plasma processing apparatus still includes: a configuration module; and the configuration module is used for configuring a dielectric layer on the front surface of the copper foil layer after the plasma etching.
Wherein the configuration module is specifically configured to: and uniformly adding a pre-configured mixture of alkali liquor and dielectric filler on the front surface of the copper foil layer after plasma etching, and naturally oxidizing in the atmosphere to obtain the dielectric layer.
According to yet another aspect of the present invention, there is provided a computer apparatus comprising: at least one processor; and a memory communicatively coupled to the at least one processor; wherein the memory stores instructions executable by the at least one processor to enable the at least one processor to perform a roll-to-roll copper foil plasma processing method as in any one of the above.
According to still another aspect of the present invention, there is provided a computer-readable storage medium storing a computer program which, when executed by a processor, implements a roll-to-roll copper foil plasma processing method as recited in any one of the above.
It can be found that, by the above scheme, the copper foil can be attached to the substrate in an adhesion manner to form a front copper foil layer and a back copper foil layer, the periphery of the front surface of the copper foil layer can be protected by sealing glue, the gas encapsulated between the back surface of the copper foil layer and the front surface of the substrate after being protected by sealing glue can be vacuumized, the front surface of the vacuumized copper foil layer can be subjected to plasma etching by adopting a roll-to-roll manner, the gas between the back copper foil layer and the front substrate can be encapsulated by the sealing glue, the encapsulated gas can be conveniently vacuumized, the internal and external pressure difference of the copper foil layer tends to zero, the outward expansion and swelling of the copper foil layer under the action of the internal and external pressure difference can be reduced, and the product quality is improved.
Further, above scheme, can adopt the ultraviolet curing to glue the mode, seal the glue protection to the front of this copper foil layer, such benefit is because ultraviolet curing glues convenient operation swiftly, can solidify at the time of several seconds, be particularly suitable for assembly line work, do not influence whole operation technology completely, and simultaneously improve production efficiency, and can get up the gas encapsulation between the copper foil layer at this back and the positive base plate through this sealing glue, be convenient for with the gas evacuation of this encapsulation, make the internal and external pressure difference that this copper foil layer received tend to zero.
Further, according to the above scheme, a dry film may be attached to the front surface of the vacuumized copper foil layer, where the dry film includes a first surface and a second surface, a plurality of first pattern grooves extending in a first direction are formed on the first surface, a plurality of second pattern grooves extending in a second direction are formed on the second surface, and plasma etching based on the first pattern grooves and the second pattern grooves is synchronously performed on the front surface of the vacuumized copper foil layer by using a roll-to-roll method.
Further, the above solution can dispose a dielectric layer on the front surface of the copper foil layer after the plasma etching, which has an advantage of realizing an improvement in the dielectric characteristics of the copper foil layer.
Further, the above solution can uniformly add a pre-configured mixture of alkali solution and dielectric filler on the front surface of the copper foil layer after plasma etching and naturally oxidize the mixture in the atmosphere to obtain the dielectric layer, which has the advantage of improving the dielectric property of the copper foil layer.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic flow chart of one embodiment of a roll-to-roll copper foil plasma processing method of the present invention;
FIG. 2 is a schematic flow chart of another embodiment of the roll-to-roll copper foil plasma treatment method of the present invention;
FIG. 3 is a schematic view of the structure of an embodiment of the roll-to-roll copper foil plasma processing apparatus according to the present invention;
FIG. 4 is a schematic view of another embodiment of a roll-to-roll copper foil plasma processing apparatus according to the present invention;
FIG. 5 is a schematic structural diagram of an embodiment of the computer apparatus of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be noted that the following examples are only illustrative of the present invention, and do not limit the scope of the present invention. Similarly, the following examples are only some but not all examples of the present invention, and all other examples obtained by those skilled in the art without any inventive work are within the scope of the present invention.
The invention provides a roll-to-roll copper foil plasma processing method, which can reduce the outward expansion and bulge of a copper foil layer under the action of internal and external pressure difference and improve the product quality.
Referring to fig. 1, fig. 1 is a schematic flow chart of a roll-to-roll copper foil plasma processing method according to an embodiment of the invention. It should be noted that the method of the present invention is not limited to the flow sequence shown in fig. 1 if the results are substantially the same. As shown in fig. 1, the method comprises the steps of:
s101: the copper foil is adhered to the substrate in an adhesion manner to form the front and back copper foil layers.
In this embodiment, the size of the copper foil may be equal to or larger than the size of the substrate, and the invention is not limited thereto.
In this embodiment, when the size of the copper foil is larger than the size of the substrate, the size of the copper foil may be cut to be equal to the size of the substrate.
S102: and sealing glue protection is carried out on the periphery of the front surface of the copper foil layer.
Wherein, should seal a glue the protection to the front of this copper foil layer, can include:
adopt UV (Ultraviolet) curing to glue the mode, seal the glue protection to the front on this copper foil layer, such benefit is because Ultraviolet curing glues convenient operation swiftly, can be at time curing of several seconds, be particularly suitable for pipelining, do not influence whole operation technology completely, and simultaneously improve production efficiency, and can get up the gas encapsulation between the copper foil layer at this back and the positive base plate through this sealing glue, be convenient for with the gaseous evacuation of this encapsulation, make the internal and external pressure difference that this copper foil layer received tend to zero.
S103: and vacuumizing the gas encapsulated between the back surface of the copper foil layer and the front surface of the substrate after the protection of the sealing compound.
In this embodiment, the gas encapsulated between the back surface of the copper foil layer and the front surface of the substrate after being protected by the sealing compound can be vacuumized to remove the non-condensable gas and water encapsulated between the back surface of the copper foil layer and the front surface of the substrate, so that the internal and external pressure differences applied to the copper foil layer can be reduced to zero.
S104: and performing plasma etching on the front surface of the vacuumized copper foil layer in a roll-to-roll mode.
Wherein, should adopt the roll-to-roll mode, carry out plasma etching to this front of the copper foil layer after the evacuation, can include:
the dry film is attached to the front surface of the vacuumized copper foil layer and comprises a first surface and a second surface, a plurality of first pattern grooves extending in the first direction are formed in the first surface, a plurality of second pattern grooves extending in the second direction are formed in the second surface, and plasma etching based on the first pattern grooves and the second pattern grooves is synchronously performed on the front surface of the vacuumized copper foil layer in a roll-to-roll mode.
Wherein, should adopt the roll-to-roll mode, after carrying out plasma etching to this front of the copper foil layer after the evacuation, can also include:
the dielectric layer is disposed on the front surface of the copper foil layer after the plasma etching, which is advantageous in that the dielectric characteristics of the copper foil layer can be improved.
It can be found that, in this embodiment, the copper foil sheet can be attached to the substrate in an adhesion manner to form a front copper foil layer and a back copper foil layer, the periphery of the front surface of the copper foil layer can be protected by sealing adhesive, the gas encapsulated between the back surface of the copper foil layer and the front surface of the substrate after being protected by sealing adhesive can be evacuated, the front surface of the copper foil layer after being evacuated can be subjected to plasma etching by adopting a roll-to-roll manner, the gas between the back copper foil layer and the front substrate can be encapsulated by the sealing adhesive, the encapsulated gas can be evacuated conveniently, the difference between the internal pressure and the external pressure of the copper foil layer tends to zero, the outward expansion and swelling of the copper foil layer under the effect of the internal pressure and the external pressure can be reduced, and the product quality can be improved.
Further, in this embodiment, can adopt the ultraviolet curing to glue the mode, seal the glue protection to the front of this copper foil layer, such benefit is because ultraviolet curing glues convenient operation swiftly, can be at several seconds time solidification, be particularly suitable for pipelining, do not influence whole operation technology completely, and simultaneously improve production efficiency, and can get up the gas encapsulation between the copper foil layer at this back and the positive base plate through this sealing glue, be convenient for with the gas evacuation of this encapsulation, make the internal and external pressure difference that this copper foil layer received tend to zero.
Further, in this embodiment, a dry film may be attached to a front surface of the vacuumized copper foil layer, where the dry film includes a first surface and a second surface, a plurality of first pattern grooves extending in a first direction are formed on the first surface, a plurality of second pattern grooves extending in a second direction are formed on the second surface, and plasma etching based on the first pattern grooves and the second pattern grooves is synchronously performed on the front surface of the vacuumized copper foil layer in a roll-to-roll manner.
Referring to fig. 2, fig. 2 is a schematic flow chart of another embodiment of the roll-to-roll copper foil plasma processing method according to the present invention. In this embodiment, the method includes the steps of:
s201: the copper foil is adhered to the substrate in an adhesion manner to form the front and back copper foil layers.
As described above in S101, the description is omitted here.
S202: and sealing glue protection is carried out on the periphery of the front surface of the copper foil layer.
As described above in S102, further description is omitted here.
S203: and vacuumizing the gas encapsulated between the back surface of the copper foil layer and the front surface of the substrate after the protection of the sealing compound.
As described above in S103, which is not described herein.
S204: and performing plasma etching on the front surface of the vacuumized copper foil layer in a roll-to-roll mode.
As described above in S104, and will not be described herein.
S205: and disposing a dielectric layer on the front surface of the copper foil layer after plasma etching.
The disposing a dielectric layer on the front surface of the copper foil layer after the plasma etching may include:
the pre-configured mixture of alkali liquor and dielectric filler is uniformly added on the front surface of the copper foil layer after plasma etching and naturally oxidized in the atmosphere to obtain the dielectric layer, so that the dielectric property of the copper foil layer can be improved.
It can be found that in the present embodiment, a dielectric layer can be disposed on the front surface of the copper foil layer after the plasma etching, which has the advantage of improving the dielectric property of the copper foil layer.
Further, in this embodiment, a pre-prepared mixture of alkali solution and dielectric filler can be uniformly added to the front surface of the copper foil layer after plasma etching and naturally oxidized in the atmosphere to obtain a dielectric layer, which has the advantage of improving the dielectric properties of the copper foil layer.
The invention also provides a roll-to-roll copper foil plasma processing device, which can reduce the outward expansion and bulge of the copper foil layer under the action of the internal and external pressure difference and improve the product quality.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a roll-to-roll copper foil plasma processing apparatus according to an embodiment of the present invention. In this embodiment, the roll-to-roll copper foil plasma processing apparatus 30 includes an attaching module 31, a sealing module 32, a vacuum-pumping module 33, and an etching module 34.
The attaching module 31 is used for attaching the copper foil onto the substrate in an adhesive manner to form front and back copper foil layers.
The sealant module 32 is used for protecting the periphery of the front surface of the copper foil layer.
The vacuum pumping module 33 is configured to vacuum the gas encapsulated between the back surface of the copper foil layer and the front surface of the substrate after being protected by the sealing compound.
The etching module 34 is configured to perform plasma etching on the front surface of the vacuumized copper foil layer in a roll-to-roll manner.
Optionally, the glue sealing module 32 may be specifically configured to:
and sealing glue protection is carried out on the front surface of the copper foil layer by adopting an ultraviolet curing glue mode.
Optionally, the etching module 34 may be specifically configured to:
and pasting a dry film on the front surface of the vacuumized copper foil layer, wherein the dry film comprises a first surface and a second surface, a plurality of first pattern grooves extending in the first direction are formed on the first surface, a plurality of second pattern grooves extending in the second direction are formed on the second surface, and the front surface of the vacuumized copper foil layer is synchronously subjected to plasma etching based on the first pattern grooves and the second pattern grooves by adopting a roll-to-roll mode.
Referring to fig. 4, fig. 4 is a schematic structural diagram of another embodiment of the roll-to-roll copper foil plasma processing apparatus according to the present invention. Different from the previous embodiment, the roll-to-roll copper foil plasma processing apparatus 40 of the present embodiment further includes a configuration module 41.
The configuring module 41 is used for configuring a dielectric layer on the front surface of the copper foil layer after the plasma etching.
Optionally, the configuration module 41 may be specifically configured to:
and uniformly adding a pre-configured mixture of alkali liquor and dielectric filler on the front surface of the copper foil layer etched by the plasma, and naturally oxidizing in the atmosphere to obtain the dielectric layer.
The corresponding steps in the above method embodiments can be respectively performed by each unit module of the roll-to-roll copper foil plasma processing apparatus 30/40, and therefore, the detailed description of each unit module is omitted here, and please refer to the description of the corresponding steps above.
The present invention further provides a computer apparatus, as shown in fig. 5, comprising: at least one processor 51; and a memory 52 communicatively coupled to the at least one processor 51; the memory 52 stores instructions executable by the at least one processor 51, and the instructions are executed by the at least one processor 51, so that the at least one processor 51 can perform the roll-to-roll copper foil plasma processing method.
Wherein the memory 52 and the processor 51 are coupled in a bus, which may comprise any number of interconnected buses and bridges, which couple one or more of the various circuits of the processor 51 and the memory 52 together. The bus may also connect various other circuits such as peripherals, voltage regulators, power management circuits, and the like, which are well known in the art, and therefore, will not be described any further herein. A bus interface provides an interface between the bus and the transceiver. The transceiver may be one element or a plurality of elements, such as a plurality of receivers and transmitters, providing a means for communicating with various other apparatus over a transmission medium. The data processed by the processor 51 is transmitted over a wireless medium via an antenna, which further receives the data and transmits the data to the processor 51.
The processor 51 is responsible for managing the bus and general processing and may also provide various functions including timing, peripheral interfaces, voltage regulation, power management, and other control functions. And the memory 52 may be used to store data used by the processor 51 in performing operations.
The present invention further provides a computer-readable storage medium storing a computer program. The computer program realizes the above-described method embodiments when executed by a processor.
It can be found that, with the above solution, the copper foil can be adhered to the substrate in an adhesion manner to form a front copper foil layer and a back copper foil layer, and the front surface of the copper foil layer can be protected by sealing adhesive, and the gas encapsulated between the back surface of the copper foil layer and the front surface of the substrate after being protected by sealing adhesive can be evacuated, and a roll-to-roll manner can be adopted, the front surface of the copper foil layer after being evacuated is subjected to plasma etching, the gas between the back copper foil layer and the front substrate can be encapsulated by the sealing adhesive, so that the encapsulated gas can be evacuated, the internal and external pressure difference of the copper foil layer tends to zero, the situation that the copper foil layer bulges outwards under the action of the internal and external pressure difference can be reduced, and the product quality can be improved.
Further, above scheme, can adopt the ultraviolet curing to glue the mode, seal the glue protection to the front of this copper foil layer, such benefit is because ultraviolet curing glues convenient operation swiftly, can solidify at the time of several seconds, be particularly suitable for assembly line work, do not influence whole operation technology completely, and simultaneously improve production efficiency, and can get up the gas encapsulation between the copper foil layer at this back and the positive base plate through this sealing glue, be convenient for with the gas evacuation of this encapsulation, make the internal and external pressure difference that this copper foil layer received tend to zero.
Further, according to the above scheme, a dry film may be attached to the front surface of the vacuumized copper foil layer, where the dry film includes a first surface and a second surface, a plurality of first pattern grooves extending in a first direction are formed on the first surface, a plurality of second pattern grooves extending in a second direction are formed on the second surface, and plasma etching based on the first pattern grooves and the second pattern grooves is synchronously performed on the front surface of the vacuumized copper foil layer by using a roll-to-roll method.
Further, the above solution can dispose a dielectric layer on the front surface of the copper foil layer after the plasma etching, which has an advantage of realizing an improvement in the dielectric characteristics of the copper foil layer.
Furthermore, the scheme can uniformly add a pre-prepared mixture of alkali liquor and dielectric filler on the front surface of the copper foil layer after plasma etching and naturally oxidize the mixture in the atmosphere to obtain a dielectric layer, and the advantage is that the dielectric property of the copper foil layer can be improved.
In the embodiments provided in the present invention, it should be understood that the disclosed system, apparatus and method may be implemented in other ways. For example, the above-described apparatus embodiments are merely illustrative, and for example, a division of a module or a unit is merely a logical division, and an actual implementation may have another division, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.
Units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the embodiment.
In addition, functional units in the embodiments of the present invention may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit. The integrated unit can be realized in a form of hardware, and can also be realized in a form of a software functional unit.
The integrated unit, if implemented in the form of a software functional unit and sold or used as a stand-alone product, may be stored in a computer readable storage medium. Based on such understanding, the technical solution of the present invention may substantially or partially contribute to the prior art, or all or part of the technical solution may be embodied in the form of a software product, which is stored in a storage medium and includes several instructions for causing a computer device (which may be a personal computer, a server, a network device, or the like) or a processor (processor) to execute all or part of the steps of the method according to the embodiments of the present invention. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk or an optical disk, and other various media capable of storing program codes.
The above description is only a part of the embodiments of the present invention, and not intended to limit the scope of the present invention, and all equivalent devices or equivalent processes performed by the present invention through the contents of the specification and the drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (4)
1. A roll-to-roll copper foil plasma processing method, comprising:
adhering copper foil onto the substrate in an adhesive manner to form copper foil layers on the front and back surfaces of the substrate; sealing glue protection is carried out on the periphery of the front surface of the copper foil layer;
vacuumizing the gas encapsulated between the back surface of the copper foil layer and the front surface of the substrate after being protected by the sealing compound;
performing plasma etching on the front surface of the vacuumized copper foil layer in a roll-to-roll mode;
and performing plasma etching on the front surface of the vacuumized copper foil layer by adopting a roll-to-roll mode, wherein the plasma etching comprises the following steps:
attaching a dry film to the front surface of the vacuumized copper foil layer, wherein the dry film comprises a first surface and a second surface, a plurality of first pattern grooves extending in a first direction are formed in the first surface, a plurality of second pattern grooves extending in a second direction are formed in the second surface, and plasma etching based on the first pattern grooves and the second pattern grooves is synchronously performed on the front surface of the vacuumized copper foil layer in a roll-to-roll mode;
after the plasma etching is performed on the front surface of the vacuumized copper foil layer in a roll-to-roll manner, the method further includes:
configuring a dielectric layer on the front surface of the copper foil layer after the plasma etching;
the configuring a dielectric layer on the front surface of the copper foil layer after the plasma etching comprises the following steps:
and uniformly adding a pre-configured mixture of alkali liquor and dielectric filler on the front surface of the copper foil layer subjected to plasma etching, and naturally oxidizing in the atmosphere to obtain the dielectric layer.
2. The roll-to-roll copper foil plasma treatment method of claim 1, wherein said encapsulating the front surface of the copper foil layer comprises:
and sealing glue protection is carried out on the front surface of the copper foil layer by adopting an ultraviolet curing glue mode.
3. A roll-to-roll copper foil plasma processing apparatus, comprising:
the device comprises an attaching module, a sealing module, a vacuumizing module and an etching module;
the attaching module is used for attaching the copper foil sheet to the substrate in an adhering mode so as to form copper foil layers on the front surface and the back surface of the substrate;
the glue sealing module is used for sealing glue and protecting the periphery of the front surface of the copper foil layer;
the vacuumizing module is used for vacuumizing the gas encapsulated between the back surface of the copper foil layer and the front surface of the substrate after being protected by the sealing glue;
the etching module is used for performing plasma etching on the front surface of the vacuumized copper foil layer in a roll-to-roll mode;
the etching module is specifically configured to:
attaching a dry film to the front surface of the vacuumized copper foil layer, wherein the dry film comprises a first surface and a second surface, a plurality of first pattern grooves extending in a first direction are formed in the first surface, a plurality of second pattern grooves extending in a second direction are formed in the second surface, and plasma etching based on the first pattern grooves and the second pattern grooves is synchronously performed on the front surface of the vacuumized copper foil layer in a roll-to-roll mode;
the roll-to-roll copper foil plasma processing apparatus further comprises:
a configuration module; the configuration module is used for configuring a dielectric layer on the front surface of the copper foil layer after the plasma etching;
the configuration module is specifically configured to:
and uniformly adding a pre-configured mixture of alkali liquor and dielectric filler on the front surface of the copper foil layer subjected to plasma etching, and naturally oxidizing in the atmosphere to obtain the dielectric layer.
4. The roll-to-roll copper foil plasma processing apparatus of claim 3, wherein the encapsulation module is specifically configured to:
and sealing glue protection is carried out on the front surface of the copper foil layer by adopting an ultraviolet curing glue mode.
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| KR101499396B1 (en) * | 2014-07-10 | 2015-03-06 | 한국생산기술연구원 | Manufacturing method for member by sintering and coating simultaneously |
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