CN113314667A - Magnetic thin film material structure for generating bias based on SOT effect - Google Patents
Magnetic thin film material structure for generating bias based on SOT effect Download PDFInfo
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Abstract
The invention relates to a magnetic thin film material structure for generating bias based on SOT effect, which adopts a top pinning structure or a bottom pinning structure and comprises a substrate, a seed layer, a spin generation layer, an antiferromagnetic pinning layer, a ferromagnetic pinned layer, a nonmagnetic interlayer, a soft magnetic free layer and a covering layer, wherein the spin generation layer is made of one of heavy metal, nonmagnetic metal, a crystal thin film or external ear semimetal. In the magnetic thin film material structure, the spin generation layer is made of one of heavy metal, nonmagnetic metal, crystal thin film or auricle semimetal, the ferromagnetic layer adjacent to the antiferromagnetic layer can be biased due to the specific material of the spin generation layer, the direction of the bias can be changed by changing the direction of the current, and the magnitude of the bias can be changed by changing the magnitude of the current density.
Description
Technical Field
The invention relates to a magnetic thin film material structure for generating bias based on SOT effect, belonging to the field of magnetic materials.
Background
Magnetoresistance refers to the phenomenon of change in resistance of a material under the action of an external magnetic field, and magnetoresistive devices have been widely used in the fields of sensors, storage and the like. The giant magnetoresistance GMR and tunnel magnetoresistance TMR structure mainly comprises two magnetic metal layers and a spacing layer sandwiched between the two magnetic metal layers, and common structures comprise a multilayer film system, a pseudo spin valve system, a spin valve system, an artificially synthesized antiferromagnetic spin valve system and the like. Since the multilayer film system requires antiparallel alignment of the magnetic moments of adjacent ferromagnetic layers by antiferromagnetic interlayer coupling at zero magnetic field, it can produce very high MR values, but at the same time requires very high saturation fields. Coupling exists between a hard magnetic layer and a free layer in a pseudo spin valve system, so that the coercive force of the free layer is increased, and the sensitivity is reduced. The spin valve system and the artificially synthesized antiferromagnetic spin valve system can pin one soft magnetic layer by means of exchange effect in the condition of no exchange coupling between the two soft magnetic layers, so that the magnetization of the soft magnetic layer is fixed in some direction, and the soft magnetic layer can be turned over freely in relatively small magnetic field to produce great MR value in small magnetic field.
The spin valve and the artificial synthetic antiferromagnetic spin valve are mainly composed of four layers: a ferromagnetic free layer, a nonmagnetic layer, a ferromagnetic pinned layer, and an antiferromagnetic layer. When the exchange coupling action of the antiferromagnetic layer can cause the magnetization of the adjacent ferromagnetic layer to be pinned in a certain direction, the magnetization of the adjacent ferromagnetic layer is always pinned in the direction under a small field and is not easy to change, and only when the external field is large enough, the magnetic moment of the pinned layer can be switched, and the magnetic moment of the free layer can be switched, so that the MR effect is not shown. So that the SOT (spin orbit torque) effect can produce pinning in different directions by changing the direction of current in a small field range.
At present, a spin valve structure and an artificially synthesized antiferromagnetic spin valve structure are dominant, and the two structures generate pinning of a specific direction on an antiferromagnetic layer through high-temperature magnetic field annealing, so that a bias of a specific direction is generated on an adjacent ferromagnetic layer. However, the direction of the bias is fixed and no bias can be generated in other directions. In practical application (for example, a wheatstone full-bridge structure is used for inducing a magnetic field), each bridge arm is required to generate pinning in the opposite direction, and obviously, the spin valve structure with pinning in a specific direction and the artificially synthesized antiferromagnetic spin valve structure limit the application range of the spin valve structure. Each bridge arm generates pinning in opposite directions, a complex and difficult-to-control magnetization technology and an additional complex process are adopted, two opposite pinning directions are difficult to prepare on one chip in the prior art, a multi-chip splicing mode is usually adopted to obtain the magnetic field sensor, and mechanical errors are difficult to avoid during splicing of the multiple chips, so that the finished product is low in sensitivity and yield, and the requirement of large-scale production is difficult to meet. Therefore, there is a need to develop an improved magnetic film stack structure that can form bias in different directions.
CN109300495A discloses a magnetic structure based on an artificial antiferromagnetic free layer and a spin orbit torque-magnetic random access memory device, which comprises a magnetic tunnel junction based on the free layer of the artificial antiferromagnetic device and a spin orbit torque material layer, wherein the magnetic tunnel junction is regulated and controlled by an electric field; the free layer based on the artificial antiferromagnetic device can be regulated and controlled by an electric field to realize the conversion from an antiferromagnetic state to a ferromagnetic state. The device can realize stable writing of data under the combined action of the electric field and the current, has a simple structure, and has the advantages of low power consumption, high speed, radiation resistance and non-volatility. However, the magnetic structure requires a specific structure to realize the function of the memory, and an auxiliary current needs to be applied to help determine the direction of the bias while generating the SOT, which has a significant challenge to the endurance and the processing degree of the device.
Disclosure of Invention
In view of the shortcomings of the prior art, the present invention provides a magnetic thin film material structure for generating bias based on the SOT effect. The magnetic thin film material structure of the present invention can bias the ferromagnetic layer adjacent to the antiferromagnetic layer, the direction of the bias can be changed by changing the direction of the current, and the magnitude of the bias can be changed by changing the magnitude of the current density.
Spin Orbit Torque (SOT) effect: when current passes through a strong spin-orbit coupling system, the generated spin current or spin accumulation at an interface can generate a moment effect on an adjacent magnetic layer, the moment can affect the magnetomotive process of the magnetic layer, and even the magnetic moment of a magnetic material can be overturned under a certain condition.
In order to achieve the above purpose, the invention is realized by the following technical scheme:
the magnetic thin film material structure comprises a substrate, a seed layer, a spin generation layer, an antiferromagnetic pinning layer, a ferromagnetic pinned layer, a nonmagnetic interlayer, a soft magnetic free layer and a covering layer, wherein the spin generation layer is made of one of heavy metal, nonmagnetic metal, a crystal thin film or external ear semimetal.
According to a preferred embodiment of the invention, the heavy metal is one of Ta, W, Pt, Au, Hf or Mo.
Preferably according to the invention, the non-magnetic metal is Ti.
According to the invention, the crystal film is Bi2Se3Film, Bi2Te3Thin film, Sb2Te3Film, BixSe1-xFilm or (Bi)xSb1-x)2Te3Film, x<1。
The crystalline thin film is a prior art material.
According to a preferred embodiment of the invention, the semimetal is a monocrystalline, polycrystalline or amorphous semimetal selected from the group consisting of WTE2, MoTe2Or MoxW1-xTe2，x<1。
According to the invention, the material for making the seed layer is one or the combination of more than two of Ta, Ru, W, Mo, Ir, Pt, NiFe, NiFeCr and NiCr.
According to the invention, the material of the antiferromagnetic pinning layer is preferably one or the combination of more than two of ferromagnetic metals of IrMn, PtMn, FeMn, NiMn and PdMn or one of antiferromagnetic materials of NiO, CoO and alpha-Fe 2O3 oxide.
According to the invention, the soft magnetic free layer and the ferromagnetic pinned layer are made of CoFeB, CoFe, Co, Fe, Ni, CoCrPt, NiFe, CoFeSiB, (Co/Pt) m, (Co/Ni) n, (Co/Pd) p or semimetal materials, wherein m, n and p refer to the repetition times of the multilayer stack.
Further preferably, the semi-metallic material is of type XXZHeusler alloy or X2The YZ type Heusler alloy is characterized In that X is selected from one or more of Mn, Co, Fe, Ni, Pd and Cu, Y is selected from one or more of Ti, V, Cr, Mn, Fe, Co or Ni, and Z is selected from one or more of Al, Ga, In, Si, Ge, Sn or Sb.
According to the present invention, the non-magnetic interlayer is preferably made of an oxide, a nitride, an oxynitride, a metal or an alloy.
Further preferably, the constituent elements of the oxide, nitride and oxynitride are selected from one or a combination of two or more of Mg, Al, Ti, Hf, Cu, Si, In, La, Ca, Sr, V, Zn and Eu.
Further preferably, the metal or alloy is composed of one or a combination of two or more of Cu, Ru, Ag, Au, Ti, Mo, W, Cr, Rh, Ta, Al, Nb, Os, Mg, and V.
Preferably, according to the present invention, the ferromagnetic pinned layer is a synthetic antiferromagnetic Structure (SAF) or a spin valve structure, the spin valve structure including the ferromagnetic pinned layer, the synthetic antiferromagnetic Structure (SAF) including the ferromagnetic pinned layer 1, the ferromagnetic pinned layer 2, and a spacer layer between the ferromagnetic pinned layer 1 and the ferromagnetic pinned layer 2.
More preferably, the spacer layer material is made of one or a combination of two or more of Ru, Ta, W, Mo, Nb, Cr, Re, Os, Ir, Au, Ag and Cu.
A magnetic thin film material structure for generating bias based on SOT effect adopts a bottom pinning structure, and is a Synthetic Antiferromagnetic (SAF) structure or a spin valve structure;
when the structure is a spin valve structure, the magnetic thin film material structure sequentially comprises a substrate, a seed layer, a spin generation layer, an antiferromagnetic pinning layer, a ferromagnetic pinned layer, a nonmagnetic interlayer, a soft magnetic free layer and a covering layer from bottom to top;
when being a synthetic antiferromagnetic Structure (SAF), the magnetic thin film material structure includes, in order from bottom to top, a substrate, a seed layer, a spin generation layer, an antiferromagnetic pinning layer, a ferromagnetic pinned layer 1, a spacer layer, a ferromagnetic pinned layer 2, a nonmagnetic interlayer, a soft magnetic free layer, and a capping layer.
A magnetic thin film material structure for generating bias based on SOT effect adopts a top pinning structure, and is a Synthetic Antiferromagnetic (SAF) structure or a spin valve structure;
when the structure is a spin valve structure, the magnetic thin film material structure sequentially comprises a substrate, a seed layer, a soft magnetic free layer, a nonmagnetic interlayer, a ferromagnetic pinned layer, an antiferromagnetic pinning layer, a spin generation layer and a covering layer from bottom to top;
when a synthetic antiferromagnetic Structure (SAF), the magnetic thin film material structure includes a substrate, a seed layer, a soft magnetic free layer, a nonmagnetic interlayer, a ferromagnetic pinned layer 2, a spacer layer, a ferromagnetic pinned layer 1, an antiferromagnetic pinning layer, a spin generation layer, and a capping layer in this order from bottom to top.
Wherein the magnetization directions of the soft free layer and the ferromagnetic pinned layer can be in-plane or out-of-plane.
The present invention is based on the SOT effect to generate biased magnetic thin film material structures, each layer of which can be formed by a suitable film forming method including Physical Vapor Deposition (PVD), Molecular Beam Epitaxy (MBE), laser pulse deposition (PLD), Atomic Layer Deposition (ALD), Chemical Vapor Deposition (CVD), electroplating or combinations thereof.
For the spin generation layer, the current flow direction is 90 degrees from the pinning direction of the antiferromagnetic pinning layer, and after the current is reversed, the pinning direction of the antiferromagnetic pinning layer is changed by 180 degrees. As shown in fig. 5, the spin generation layer Pt and the antiferromagnetic pinning layer IrMn act to generate a torque on IrMn when a current is applied to Pt (τ ∞ mx (m × p), where m is the IrMn magnetic moment direction and p is the spin direction), and align the IrMn surface magnetic moment along the surface magnetic moment to form a pinning direction in this direction. The current density of the current is 106-107A/cm 2, the current needs to flow transversely, and the current is direct current.
The invention has the technical characteristics and advantages that:
1. in the magnetic thin film material structure, the spin generation layer is made of one of heavy metal, nonmagnetic metal, crystal thin film or auricle semimetal, the ferromagnetic layer adjacent to the antiferromagnetic layer can be biased due to the specific material of the spin generation layer, the direction of the bias can be changed by changing the direction of the current, and the magnitude of the bias can be changed by changing the magnitude of the current density.
2. The magnetic thin film material structure can form a pinning reverse full-bridge structure on a single film stack, has flexibility for the design of a sensor, can adjust the sensitivity and the measurement range according to different applications, has strong compatibility with CMOS, can be directly prepared on an ASIC circuit, and has simple structure and small chip area.
Drawings
FIG. 1 is a schematic structural view of a spin valve magnetic thin film material of the bottom pinned structure of example 1;
FIG. 2 is a schematic structural diagram of an artificially synthesized antiferromagnetic magnetic thin film material of the bottom pinned structure of example 2;
FIG. 3 is a schematic view of a spin valve magnetic thin film material structure of the top pinned structure of example 3;
FIG. 4 is a schematic structural diagram of an artificially synthesized antiferromagnetic magnetic thin film material of the top pinned structure of example 4;
FIG. 5 shows the current flow of the spin generation layer in the direction opposite to the pinning direction of the antiferromagnetic pinning layer;
FIG. 6 is a graph showing the original magnetization of the thin film material structure in the absence of applied current in example 1;
FIG. 7 shows the current density of 2.5X10 applied in example 17A/cm2Magnetization curve of the thin film material structure, generating a forward bias field Hex；
FIG. 8 shows the current density applied in example 1 as-2.5X 107A/cm2The magnetization curve of the film material structure generates a negative bias field Hex。
Detailed Description
The invention is further defined in the following, but not limited to, the figures and examples in the description.
Example 1
A magnetic thin film material structure for generating bias based on SOT effect, specifically a spin valve magnetic thin film material with bottom pinning structure, is shown in FIG. 1Sequentially comprises Si/SiO from bottom to top2The device comprises a substrate, a 2nm Ta seed layer, an 8nm Pt spin generation layer, an 8nm IrMn antiferromagnetic pinning layer, a 5nm CoFe ferromagnetic pinned layer, a 1.8nm Cu nonmagnetic interlayer, a CoFe 1nm/NiFe2nm soft magnetic free layer and a 2nm Ta covering layer.
The resulting material was micro-processed into a long strip having a length of 80 μm and a width of 10 μm. The original magnetization curve was measured with no current applied across the strip, as shown in fig. 6, and no bias effect was present. Passing a current at 2.5x10 through the ends of the strip7 A/cm2When the current is applied, the magnetization curve is measured as shown in FIG. 7, and a bias magnetic field (+ H) in the positive direction is generatedex) When the current density is switched in the reverse direction, the current density is 2.5x107A/cm2(-2.5x107 A/cm2) When the current is applied, the magnetization curve is measured as shown in FIG. 8, and a bias magnetic field (-H) in the negative direction is generatedex). To explain, the description of the current direction here: we refer to the direction of the current that produces the positive bias as positive and the direction of the current that produces the negative bias as negative.
Example 2
A magnetic thin film material structure for generating bias based on SOT effect, specifically an artificially synthesized antiferromagnetic magnetic thin film material with bottom pinning structure, is shown in FIG. 2, and sequentially comprises Si/SiO from bottom to top2The device comprises a substrate, a 2nm Ta seed layer, an 8nm Pt spin generation layer, an 8nm IrMn antiferromagnetic pinning layer, a 5nm CoFe ferromagnetic pinned layer 1, a 2nm Ta spacing layer, a 5nm CoFeB ferromagnetic pinned layer 2, a 1.8nm Cu nonmagnetic interlayer, a CoFe 1nm/NiFe2nm soft magnetic free layer and a 2nm Ta covering layer.
Example 3
A magnetic thin film material structure generating bias based on SOT effect, in particular to a spin valve magnetic thin film material with a top pinning structure; the structure is shown in figure 3 and comprises Si/SiO in sequence from bottom to top2A substrate, a 2nm Ta seed layer, a CoFe 1nm/NiFe2nm soft magnetic free layer, a 1.8nm Cu nonmagnetic interlayer, a 5nm CoFe ferromagnetic pinned layer, an 8nm IrMn antiferromagnetic pinning layer, an 8nm Pt spin generation layer, and a 2nm Ta capping layer.
Example 4
Magnetic thin film material structure for generating bias based on SOT effect, in particular to top nailing structureThe structure of the artificially synthesized antiferromagnetic magnetic thin film material is shown in figure 4, and the artificially synthesized antiferromagnetic magnetic thin film material sequentially comprises Si/SiO from bottom to top2A substrate, a 2nm Ta seed layer, a CoFe 1nm/NiFe2nm soft magnetic free layer, a 1.8nm Cu nonmagnetic interlayer, a 5nm CoFeB ferromagnetic pinned layer 2, a 2nm Ta spacer layer, a 5nm CoFe ferromagnetic pinned layer 1, an 8nm IrMn antiferromagnetic pinning layer, an 8nm Pt spin-generating layer, and a 2nm Ta capping layer.
Example 5
The structure is the same as the structure of the magnetic thin film material for generating bias based on the SOT effect described in embodiment 1, except that the spin generation layer is made of Ta.
Example 6
The structure of the magnetic thin film material for generating bias based on SOT effect as described in example 1 is different in that the material for forming the spin generating layer is Hf.
Example 7
The structure is the same as the structure of the magnetic thin film material for generating bias based on SOT effect described in embodiment 1, except that the spin generation layer is made of Ti.
Example 8
The structure of the magnetic thin film material for generating bias based on SOT effect as described in example 1 is different in that the spin generation layer is made of Bi2Se3A film.
Example 9
The structure of the magnetic thin film material for generating bias based on SOT effect as described in example 1 is different in that the spin generation layer is made of WTE 2.
Example 10
The structure of the magnetic thin film material for generating bias based on SOT effect as described in example 1 is different in that the spin generation layer is made of MoTe2。
Claims (10)
1. The magnetic thin film material structure comprises a substrate, a seed layer, a spin generation layer, an antiferromagnetic pinning layer, a ferromagnetic pinned layer, a nonmagnetic interlayer, a soft magnetic free layer and a covering layer, wherein the spin generation layer is made of one of heavy metal, nonmagnetic metal, a crystal thin film or external ear semimetal.
2. The SOT effect bias generating magnetic thin film material structure of claim 1, wherein the heavy metal is one of Ta, W, Pt, Au, Hf, or Mo.
3. The SOT effect bias-generating magnetic thin film material structure of claim 1, wherein the nonmagnetic metal is Ti.
4. The SOT effect bias-based magnetic thin film material structure of claim 1, wherein the crystal thin film is Bi2Se3Film, Bi2Te3Thin film, Sb2Te3Film, BixSe1-xFilm or (Bi)xSb1-x)2Te3Film, x<1。
5. The SOT effect bias generating magnetic thin film material structure of claim 1, wherein the epi-semimetal is a single crystal, polycrystalline or amorphous epi-semimetal selected from WTe2, MoTe2Or MoxW1-xTe2，x<1。
6. The SOT effect bias-based magnetic thin film material structure of claim 1, wherein the seed layer is made of one or a combination of more than two of Ta, Ru, W, Mo, Ir, Pt, NiFe, NiFeCr and NiCr; the antiferromagnetic pinning layer is made of one or the combination of more than two of IrMn, PtMn, FeMn, NiMn and PdMn ferromagnetic metals or one of NiO, CoO and alpha-Fe 2O3 oxide antiferromagnetic materials.
7. The SOT effect bias-generating magnetic thin film material structure of claim 1, wherein the soft free layer and ferromagnetic pinned layer are made of CoFeB, CoFe, Co, Fe, Ni, CoCrPt, NiFe, CoFeSiB, (Co/Pt) m, (Co/Ni) n, (Co/Pd) p or a semi-metal material, where m, n, p refer to the number of repetitions of the multilayer stack;
preferably, the semi-metallic material is a Heusler alloy type XXZ or X2The YZ type Heusler alloy is characterized In that X is selected from one or more of Mn, Co, Fe, Ni, Pd and Cu, Y is selected from one or more of Ti, V, Cr, Mn, Fe, Co or Ni, and Z is selected from one or more of Al, Ga, In, Si, Ge, Sn or Sb;
the non-magnetic interlayer is made of oxide, nitride, oxynitride, metal or alloy;
preferably, the constituent elements of the oxide, nitride and oxynitride are selected from one or more of Mg, Al, Ti, Hf, Cu, Si, In, La, Ca, Sr, V, Zn and Eu;
further preferably, the metal or alloy is composed of one or a combination of two or more of Cu, Ru, Ag, Au, Ti, Mo, W, Cr, Rh, Ta, Al, Nb, Os, Mg, and V.
8. The SOT effect bias generating magnetic thin film material structure of claim 1, wherein the ferromagnetic pinned layer is a Synthetic Antiferromagnetic (SAF) structure or a spin valve structure, the spin valve structure comprises a ferromagnetic pinned layer, the Synthetic Antiferromagnetic (SAF) structure comprises a ferromagnetic pinned layer 1, a ferromagnetic pinned layer 2 and a spacer layer between the ferromagnetic pinned layer 1 and the ferromagnetic pinned layer 2, and the spacer layer is made of one or a combination of two or more of Ru, Ta, W, Mo, Nb, Cr, Re, Os, Ir, Au, Ag or Cu.
9. A magnetic thin film material structure for generating bias based on SOT effect adopts a bottom pinning structure, and is a Synthetic Antiferromagnetic (SAF) structure or a spin valve structure;
when the structure is a spin valve structure, the magnetic thin film material structure sequentially comprises a substrate, a seed layer, a spin generation layer, an antiferromagnetic pinning layer, a ferromagnetic pinned layer, a nonmagnetic interlayer, a soft magnetic free layer and a covering layer from bottom to top;
when being a synthetic antiferromagnetic Structure (SAF), the magnetic thin film material structure includes, in order from bottom to top, a substrate, a seed layer, a spin generation layer, an antiferromagnetic pinning layer, a ferromagnetic pinned layer 1, a spacer layer, a ferromagnetic pinned layer 2, a nonmagnetic interlayer, a soft magnetic free layer, and a capping layer.
10. A magnetic thin film material structure for generating bias based on SOT effect adopts a top pinning structure, and is a Synthetic Antiferromagnetic (SAF) structure or a spin valve structure;
when the structure is a spin valve structure, the magnetic thin film material structure sequentially comprises a substrate, a seed layer, a soft magnetic free layer, a nonmagnetic interlayer, a ferromagnetic pinned layer, an antiferromagnetic pinning layer, a spin generation layer and a covering layer from bottom to top;
when a synthetic antiferromagnetic Structure (SAF), the magnetic thin film material structure includes a substrate, a seed layer, a soft magnetic free layer, a nonmagnetic interlayer, a ferromagnetic pinned layer 2, a spacer layer, a ferromagnetic pinned layer 1, an antiferromagnetic pinning layer, a spin generation layer, and a capping layer in this order from bottom to top.
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Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101996734A (en) * | 2009-08-25 | 2011-03-30 | 中国科学院物理研究所 | Linear response giant magnetoresistance effect multilayer film |
| CN102148327A (en) * | 2010-12-31 | 2011-08-10 | 钱正洪 | Minor hysteresis spin valve magnetic resistor |
| CN102288927A (en) * | 2011-06-28 | 2011-12-21 | 钱正洪 | Giant magnetoresistance (GMR) spin valve magnetic sensor and manufacturing method thereof |
| CN102706954A (en) * | 2012-06-05 | 2012-10-03 | 清华大学 | Spin valve GMR film structure, biosensor employing same and biosensor manufacturing method |
| CN104600193A (en) * | 2015-02-02 | 2015-05-06 | 于广华 | Ultrahigh anomalous hall sensitivity film material, preparation method, magnetic sensor and element |
| US20180106873A1 (en) * | 2016-10-19 | 2018-04-19 | National University Of Singapore | Method for providing a magnetic sensor with a biasing spin-orbit effective field |
| CN108010549A (en) * | 2017-12-04 | 2018-05-08 | 西安交通大学 | A kind of spin polarized current generator and its magnetic devices |
| CN108387852A (en) * | 2018-04-23 | 2018-08-10 | 北京航空航天大学青岛研究院 | Single, double axis magnetic field sensor and preparation method thereof |
| US20180301266A1 (en) * | 2017-04-17 | 2018-10-18 | Cornell University | Magnetic structures having dusting layer |
| CN109300495A (en) * | 2018-09-18 | 2019-02-01 | 西安交通大学 | Magnetic texure and SOT-MRAM based on artificial antiferromagnetic free layer |
| CN109507617A (en) * | 2018-10-29 | 2019-03-22 | 华中科技大学 | The detection method of vector detector and unknown magnetic field based on Quantum geometrical phase |
| CN109638151A (en) * | 2018-12-04 | 2019-04-16 | 中国科学院上海微系统与信息技术研究所 | Storage unit, cryogenic memory and its reading/writing method |
| CN110927636A (en) * | 2019-11-27 | 2020-03-27 | 北京航空航天大学青岛研究院 | Sensor for measuring vertical magnetic field and method thereof |
-
2021
- 2021-04-14 CN CN202110402104.5A patent/CN113314667B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101996734A (en) * | 2009-08-25 | 2011-03-30 | 中国科学院物理研究所 | Linear response giant magnetoresistance effect multilayer film |
| CN102148327A (en) * | 2010-12-31 | 2011-08-10 | 钱正洪 | Minor hysteresis spin valve magnetic resistor |
| CN102288927A (en) * | 2011-06-28 | 2011-12-21 | 钱正洪 | Giant magnetoresistance (GMR) spin valve magnetic sensor and manufacturing method thereof |
| CN102706954A (en) * | 2012-06-05 | 2012-10-03 | 清华大学 | Spin valve GMR film structure, biosensor employing same and biosensor manufacturing method |
| CN104600193A (en) * | 2015-02-02 | 2015-05-06 | 于广华 | Ultrahigh anomalous hall sensitivity film material, preparation method, magnetic sensor and element |
| US20180106873A1 (en) * | 2016-10-19 | 2018-04-19 | National University Of Singapore | Method for providing a magnetic sensor with a biasing spin-orbit effective field |
| US20180301266A1 (en) * | 2017-04-17 | 2018-10-18 | Cornell University | Magnetic structures having dusting layer |
| CN108010549A (en) * | 2017-12-04 | 2018-05-08 | 西安交通大学 | A kind of spin polarized current generator and its magnetic devices |
| CN108387852A (en) * | 2018-04-23 | 2018-08-10 | 北京航空航天大学青岛研究院 | Single, double axis magnetic field sensor and preparation method thereof |
| CN109300495A (en) * | 2018-09-18 | 2019-02-01 | 西安交通大学 | Magnetic texure and SOT-MRAM based on artificial antiferromagnetic free layer |
| CN109507617A (en) * | 2018-10-29 | 2019-03-22 | 华中科技大学 | The detection method of vector detector and unknown magnetic field based on Quantum geometrical phase |
| CN109638151A (en) * | 2018-12-04 | 2019-04-16 | 中国科学院上海微系统与信息技术研究所 | Storage unit, cryogenic memory and its reading/writing method |
| CN110927636A (en) * | 2019-11-27 | 2020-03-27 | 北京航空航天大学青岛研究院 | Sensor for measuring vertical magnetic field and method thereof |
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