CN113311522A - Optical asymmetric transmission structure and optical device - Google Patents
Optical asymmetric transmission structure and optical device Download PDFInfo
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- CN113311522A CN113311522A CN202110593145.7A CN202110593145A CN113311522A CN 113311522 A CN113311522 A CN 113311522A CN 202110593145 A CN202110593145 A CN 202110593145A CN 113311522 A CN113311522 A CN 113311522A
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- G02B5/00—Optical elements other than lenses
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Abstract
The present disclosure provides an optical asymmetric transmission structure and an optical device, which can solve the problems of low optical asymmetric transmission efficiency and complex structure of the existing optical asymmetric transmission structure. The disclosed optical asymmetric transmission structure includes: the grating array comprises a first substrate and a plurality of grating units positioned on the first substrate; the grating unit includes: a metal layer; the thickness of the metal layer is less than or equal to 500 nanometers.
Description
Technical Field
The disclosure belongs to the technical field of optical devices, and particularly relates to an optical asymmetric transmission structure and an optical device.
Background
The Asymmetric Light Transmission (ALT) of light means that the transmittance measured when light is incident from both sides of the device is different, respectively. At present, the schemes for realizing asymmetric transmission of light are mainly based on optical nonreciprocal methods, such as magneto-optical effect, nonlinear optics, indirect interband photon transition, photoacoustic effect and the like. Optical non-reciprocity is a desirable solution because it enables the device to transmit any optical mode in one direction and filter parallel optical modes in the other direction using polarizers.
However, the optical nonreciprocal scheme is not suitable for asymmetric transmission of natural light because it requires polarization of light itself, or requires periodic modulation of light, or requires high light intensity. Secondly, most of the structures formed by adopting the optical nonreciprocal scheme at present are generally complex, are generally incompatible with the preparation process of the semiconductor device and the display panel due to the limitation of manufacturing materials and structures, have small structures and higher requirements on the processing progress, and further limit the compatibility with the preparation process of the semiconductor device and the display panel. Moreover, the structure formed by the current optical nonreciprocal scheme is difficult to have a relatively wide bandwidth, and fewer devices are operated in the visible light band.
Disclosure of Invention
The present disclosure is directed to at least one of the technical problems of the prior art, and provides an optical asymmetric transmission structure and an optical device.
In a first aspect, an embodiment of the present disclosure provides an optical asymmetric transmission structure, including: the grating array comprises a first substrate and a plurality of grating units positioned on the first substrate;
the grating unit includes: a metal layer; the thickness of the metal layer is less than or equal to 500 nanometers.
Optionally, the grating unit further comprises: a dielectric layer;
the dielectric layer is located between the first substrate and the metal layer.
Optionally, an orthographic projection of the metal layer on the first substrate at least partially overlaps an orthographic projection of the dielectric layer on the first substrate.
Optionally, an orthographic projection of the metal layer on the first substrate falls within an orthographic projection of the dielectric layer on the first substrate.
Optionally, a center point of the metal layer and a center point of the dielectric layer are located on the same straight line.
Optionally, the metal layer has a first bottom surface facing away from the first substrate and a second bottom surface disposed opposite to the first bottom surface, and the dielectric layer has a third bottom surface facing away from the first substrate and a fourth bottom surface disposed opposite to the third bottom surface;
the area of the first bottom surface is smaller than or equal to that of the second bottom surface, the area of the second bottom surface is smaller than or equal to that of the third bottom surface, and the area of the third bottom surface is smaller than or equal to that of the fourth bottom surface.
Optionally, the metal layer further has a first side surface connected to both the first bottom surface and the second bottom surface, and the dielectric layer further has a second side surface connected to both the third bottom surface and the fourth bottom surface;
the first side surface is provided with a first side edge and a second side edge which are oppositely arranged along the direction vertical to the first substrate; the second side surface is provided with a third side edge and a fourth side edge which are oppositely arranged along the direction vertical to the first substrate;
the joint of the first side edge and the third side edge is in arc connection or straight line connection;
the junction of the second side edge and the fourth side edge is in arc connection or straight line connection.
Optionally, the material of the metal layer includes: one or more of aluminum, silver, or gold; the material of the dielectric layer comprises: silicon nitride.
Optionally, the plurality of grating units are arranged in a triangular lattice arrangement, a tetragonal lattice arrangement or a hexagonal lattice arrangement.
Optionally, the optical asymmetric transmission structure further includes: a second substrate arranged opposite to the first substrate, and an anisotropic material between the first substrate and the second substrate;
the anisotropic material is filled between the grating units and the second substrate.
Optionally, the anisotropic material comprises: a liquid crystal material.
Optionally, the optical asymmetric transmission structure further includes: the first electrode layer and the second electrode layer are oppositely arranged;
the first electrode layer is positioned between the first substrate and the dielectric layer;
the second electrode layer is positioned on one side of the second substrate close to the first substrate;
the liquid crystal material is filled between the first electrode layer and the second electrode layer.
Optionally, the optical asymmetric transmission structure further includes: an alignment layer;
the alignment layer is located on one side, away from the second substrate, of the second electrode layer.
In a second aspect, embodiments of the present disclosure provide an optical device comprising an optical asymmetric transmission structure as provided above.
Drawings
FIG. 1 is a schematic diagram of an exemplary optical asymmetric transmission structure;
FIG. 2a is a schematic diagram of the asymmetric optical transmission structure shown in FIG. 1;
FIG. 2b is a schematic diagram of the asymmetric optical transmission structure shown in FIG. 1 under a daytime environment;
FIG. 2c is a schematic diagram of the asymmetric optical transmission structure shown in FIG. 1 in a night environment;
fig. 3 is a schematic structural diagram of an optical asymmetric transmission structure according to an embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of another optical asymmetric transmission structure provided in the embodiment of the present disclosure;
FIG. 5 is a schematic structural diagram of a grating unit in the asymmetric optical transmission structure shown in FIG. 4;
FIG. 6a is a schematic diagram of an arrangement of grating units;
FIG. 6b is a schematic diagram of another arrangement of grating units;
fig. 7 is a schematic structural diagram of another optical asymmetric transmission structure provided in the embodiment of the present disclosure;
fig. 8 is a schematic diagram of transmittance of an asymmetric optical transmission structure provided in an embodiment of the present disclosure when no electric field is applied;
fig. 9 is a schematic diagram of transmittance of an asymmetric optical transmission structure provided in an embodiment of the present disclosure when an electric field is applied;
fig. 10 is a flowchart of a manufacturing process of an asymmetric optical transmission structure according to an embodiment of the present disclosure.
Detailed Description
For a better understanding of the technical aspects of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. Also, the use of the terms "a," "an," or "the" and similar referents do not denote a limitation of quantity, but rather denote the presence of at least one. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
Fig. 1 is a schematic structural diagram of an exemplary optical asymmetric transmission structure, as shown in fig. 1, the optical asymmetric transmission structure includes: a substrate 101, a metal layer 102 on the substrate 101, and a protective layer 103 on a side of the metal layer 102 facing away from the substrate 101. The substrate 101 can be made of a flexible material or a rigid material, and mainly plays a role in supporting other film layers thereon; the metal layer 102 may be formed by an evaporation process, and the material thereof may be aluminum (Al); the protective layer 103 may be silicon dioxide (SiO)2) Is made to protect the metal layer 102 from the metal layer102 is oxidized. The surface of the metal layer 102 close to the passivation layer 103 is smooth and has a high reflectivity, and the surface close to the substrate 101 is rough and has a low reflectivity. Fig. 2a is a schematic diagram illustrating the principle of the asymmetric light transmission structure shown in fig. 1, and as shown in fig. 2a, the asymmetric light transmission structure may have a reflectivity of 70% and a transmittance of 20%. In practical applications, the smooth side of the metal layer 102 faces outdoors and the rough side faces indoors. As shown in fig. 2b, when the outdoor brightness is significantly higher than the indoor brightness, for example, during sunny day, the intensity of the outdoor light may be 200 nit (nit), the intensity of the indoor light is only 70nit, the intensity of the reflected part of the outdoor light is 140nit, the intensity of the indoor light is only 14nit, and the intensity of the reflected light of the outdoor light is significantly higher than the intensity of the transmitted light of the indoor light, so that the reflected light can completely mask the transmitted light intensity, and thus the user cannot see the indoor when looking from the outdoor to the indoor. However, as shown in fig. 2c, when the outdoor brightness is lower than the indoor brightness, for example, at night, the intensity of the outdoor light is only 10nit, the intensity of the indoor light is 70nit, the intensity of the part of the outdoor light reflected is only 7nit, the intensity of the indoor light transmitted is 10nit, the intensity of the outdoor light reflected is substantially the same as the intensity of the indoor light transmitted, and thus the reflected light does not completely mask the transmitted light, and thus a good asymmetric light transmission effect cannot be achieved.
At present, the schemes for realizing asymmetric transmission of light are mainly based on optical nonreciprocal methods, such as magneto-optical effect, nonlinear optics, indirect interband photon transition, photoacoustic effect and the like. Optical non-reciprocity is a desirable solution because it enables the device to transmit any optical mode in one direction and filter parallel optical modes in the other direction using polarizers. However, the optical nonreciprocal scheme is not suitable for asymmetric transmission of natural light because it requires polarization of light itself, or requires periodic modulation of light, or requires high light intensity. Secondly, most of the structures formed by adopting the optical nonreciprocal scheme at present are generally complex, are generally incompatible with the preparation process of the semiconductor device and the display panel due to the limitation of manufacturing materials and structures, have small structures and higher requirements on the processing progress, and further limit the compatibility with the preparation process of the semiconductor device and the display panel. Moreover, the structure formed by the current optical nonreciprocal scheme is difficult to have a relatively wide bandwidth, and fewer devices are operated in the visible light band.
In order to solve at least one of the above technical problems, embodiments of the present disclosure provide an optical asymmetric transmission structure and an optical device, which will be described in further detail with reference to the accompanying drawings and specific embodiments.
In a first aspect, an embodiment of the present disclosure provides an optical asymmetric transmission structure, and fig. 3 is a schematic structural diagram of the optical asymmetric transmission structure provided in the embodiment of the present disclosure, as shown in fig. 3, the optical asymmetric transmission structure includes: a first substrate 301 and a plurality of grating units 302 located on the first substrate 301; the grating unit 302 includes: metal layer 3021 (this metal layer 3021 is not related to metal layer 102 shown in fig. 1); the thickness of metal layer 3021 is less than or equal to 500 nanometers (nm).
It should be noted that the light incident from the grating unit 302 and transmitted through the first substrate 301 is defined as forward transmission, and the light incident from the first substrate 301 and transmitted through the grating unit 302 is defined as backward transmission. The metal layer 3021 in the plurality of grating units 302 may have a thickness of 500nm or less and may be arranged to form similar voids, and particularly, the metal layer 3021 in the grating units 302 may function as a diffraction grating for light when the voids are on the same order of magnitude as the wavelength of light. When light is transmitted from the forward direction, bragg diffraction may occur when the light is irradiated to the metal layer 3021 from the air. At this time, a wave vector in the horizontal direction may be generated on the surface of metal layer 3021, and may be coupled with metal layer 3021 to form a Surface Plasmon Polaritons (SPP) mode, so that light may be effectively transmitted. When light is transmitted in the reverse direction, the light is irradiated from the first substrate 301 to the metal layer 3021, and the light is asymmetric when being transmitted in the forward direction, and a wave vector generated by the reverse transmission cannot be coupled with the metal layer 3021 to form an SPP mode, so that the light cannot be effectively transmitted, and thus, the asymmetric transmission of the light is realized.
In the asymmetric transmission structure of light that this disclosed embodiment provided, be provided with a plurality of grating units 302 that constitute by metal layer 301 on first base plate 301, grating unit 301 can be used as the diffraction grating, when light is by forward transmission and reverse transmission, can be in order to take place bragg diffraction, in order to realize the asymmetric transmission of light, can be so that the asymmetric transmission structure of light can not rely on optical polarization, be applicable to the asymmetric transmission of visible light full wave band, avoided adopting the polaroid to shelter from of light simultaneously, thereby can guarantee the effective transmissivity of light. Moreover, the structure of the optical asymmetric transmission structure provided by the embodiment is simpler, and the material and the preparation process of the film layer have better compatibility with the material and the preparation process of the semiconductor device and the display panel, so that the optical asymmetric transmission structure can be effectively integrated with the semiconductor device and the display panel, and the preparation and research and development costs can be saved.
Fig. 4 is a schematic structural diagram of another asymmetric optical transmission structure provided in the embodiment of the present disclosure, where the grating unit 302 further includes: dielectric layer 3022, dielectric layer 3022 is located between first substrate 301 and metal layer 3021.
When light is transmitted in the forward direction, the dielectric layer 3022 may form a waveguide mode while bragg diffraction is generated in the gap between the metal layers 3021, and transmittance of light may be further improved. When light is transmitted in the reverse direction, the dielectric layer and other film layers have strong reflection effect due to the fact that the refractive indexes of the dielectric layer and the other film layers are not matched, the transmittance of the light can be further reduced, and therefore the asymmetric transmission effect of the light can be further improved.
Fig. 5 is a schematic structural diagram of a grating unit in the asymmetric optical transmission structure shown in fig. 4, and as shown in fig. 5, an orthogonal projection of a metal layer 3021 on the first substrate 301 at least partially overlaps an orthogonal projection of a dielectric layer 3022 on the first substrate 301.
In practical application, the metal layer 3021 and the dielectric layer 3022 may be stacked, and the metal layer 3021 and the dielectric layer 3022 may be at least partially overlapped, the dielectric layer 3022 may support the metal layer 3021, when light is transmitted from the forward direction, the light may mostly irradiate the metal layer 3021, so as to implement bragg diffraction to a greater extent, the dielectric layer 3022 may form a waveguide mode, and the transmittance of the light may be further improved. When light is transmitted reversely, the dielectric layer 3022 may shield the light, so that most of the light irradiates the dielectric layer 3022, and the refractive index of the dielectric layer is not matched with that of other film layers, so that the light has a strong reflection effect, the transmittance of the light may be further reduced, and the asymmetric transmission effect of the light may be further improved. The cross-sectional shapes of the metal layer 3021 and the dielectric layer 3022 in a direction parallel to the first substrate 301 may be circular, square, or other irregular shapes, in the embodiment of the disclosure, a circular shape is taken as an example for description, and when the cross-sectional shape is other shapes, the implementation principle is similar thereto, and details will not be described again.
Further, as shown in fig. 5, an orthographic projection of metal layer 3021 on first substrate 301 falls within an orthographic projection of dielectric layer 3022 on first substrate 301.
The orthographic projection of the metal layer 3021 on the first substrate 301 falls in the orthographic projection of the dielectric layer 3022 on the first substrate 301, so that the metal layer is completely shielded by the dielectric layer 3022, when light is transmitted in the reverse direction, the dielectric layer 3022 can shield the light, so that the light is completely irradiated to the dielectric layer 3022, and the dielectric layer has a strong reflection effect due to the mismatch of the refractive indexes of the dielectric layer and other film layers, so that the transmittance of the light can be further reduced, and the asymmetric transmission effect of the light can be further improved.
Further, as shown in fig. 5, the center point of metal layer 3021 is aligned with the center point of dielectric layer 3022.
The central point of the metal layer 3021 and the central point of the dielectric layer 3022 are located on the same straight line, so that the preparation process is convenient, the difficulty of the preparation process is reduced, and the preparation cost is saved.
In some embodiments, as shown in fig. 5, metal layer 3021 has a first bottom surface facing away from first substrate 301 and a second bottom surface disposed opposite the first bottom surface, and dielectric layer 3022 has a third bottom surface facing away from first substrate 301 and a fourth bottom surface disposed opposite the third bottom surface; the area of the first bottom surface is smaller than or equal to that of the second bottom surface, the area of the second bottom surface is smaller than or equal to that of the third bottom surface, and the area of the third bottom surface is smaller than or equal to that of the fourth bottom surface.
Generally, the more symmetry planes a structure has, the higher the symmetry is, and compared with a structure with fewer symmetry planes, the structure can be called a highly symmetric structure, and the highly symmetric structure can realize asymmetric transmission of natural light. In the embodiment of the present disclosure, the cross-sectional shapes of the metal layer 3021 and the dielectric layer 3022 in a direction parallel to the first substrate 301 may be both circular, wherein the area of the first bottom surface is smaller than or equal to the area of the second bottom surface, the area of the second bottom surface is smaller than or equal to the area of the third bottom surface, and the area of the third bottom surface is smaller than or equal to the area of the fourth bottom surface, so that the grating unit 302 formed by the metal layer 3021 and the dielectric layer 3022 may form a circular truncated cone or a cylindrical shape. Because the cylindrical shape or the circular truncated cone shape has an infinite number of symmetrical surfaces, the whole grating unit 302 in the embodiment of the present disclosure has a highly symmetrical structure, so that natural light can be asymmetrically transmitted, and meanwhile, the ratio of the light transmittance of forward transmission to the light transmittance of reverse transmission is high, so that the asymmetric transmission efficiency of light can be effectively improved. It is to be understood that the cross-sectional shapes of the metal layer 3021 and the dielectric layer 3022 in a direction parallel to the first substrate 301 may also be both square, polygonal, etc., and the number of symmetrical planes thereof is significantly less than that of the cylindrical shape or the truncated cone shape, and therefore, preferably, the cross-sections of the metal layer 3021 and the dielectric layer 3022 in a direction parallel to the first substrate 301 may be both circular in the embodiment of the present disclosure.
In some embodiments, as shown in fig. 5, metal layer 3021 also has a first side surface connected to both the first bottom surface and the second bottom surface, and dielectric layer 3022 also has a second side surface connected to both the third bottom surface and the fourth bottom surface; the first side surface is provided with a first side edge and a second side edge which are oppositely arranged along the direction vertical to the first substrate; the second side surface is provided with a third side edge and a fourth side edge which are oppositely arranged along the direction vertical to the first substrate; the joint of the first side edge and the third side edge is in arc connection or straight line connection; the junction of the second side and the fourth side is an arc-shaped junction (not shown) or a straight junction.
It should be noted that, the metal layer 3021 and the dielectric layer 3022 may be connected in an arc shape or a straight line at the side surface connection position of the two, and when light is transmitted in the forward direction, bragg diffraction may occur at a gap position between the metal layers 3021, so as to ensure transmittance of the light. When light is transmitted reversely, the dielectric layer 3022 can reflect light due to the mismatch of refractive index with other film layers, thereby improving the asymmetric transmission efficiency of light. Preferably, in order to facilitate preparation, the joint of the two can be set to be in linear connection, so that the difficulty of the preparation process is reduced, and the preparation cost is saved.
In some embodiments, the material of metal layer 3021 includes: one or more of aluminum, silver, or gold; the material of dielectric layer 3022 includes: silicon nitride.
In practical applications, the metal layer 3021 may be made of a metal material or an alloy material, such as aluminum, silver or gold, or a single-layer or multi-layer structure formed by an alloy including one or more of aluminum, silver or gold, for example, the multi-layer structure may be a multi-metal layer stack, such as a gold, aluminum, gold three-layer metal layer stack, and the like, and the dielectric layer 3022 may be made of an insulating material, such as silicon nitride. It is understood that metal layer 3021 and dielectric layer 3022 may be made of other materials, and the materials may be reasonably selected according to actual needs, which are not listed here.
In some embodiments, the plurality of grating cells 302 are in a triangular lattice arrangement, a tetragonal lattice arrangement, or a hexagonal lattice arrangement.
The arrangement of the plurality of grating units 302 may be various, such as a triangular lattice arrangement as shown in fig. 6a, a tetragonal lattice arrangement as shown in fig. 6b, or a hexagonal lattice arrangement (not shown). It is understood that the grating unit 302 may be arranged in other periodic arrangements with a period of 300nm to 1000nm to satisfy the condition of implementing bragg diffraction. The implementation principle is similar to the implementation of the above arrangement mode, and is not described herein again. For convenience of preparation, in the examples of the present disclosure and the following description, a tetragonal lattice arrangement as shown in fig. 6b will be exemplified.
Fig. 7 is a schematic structural diagram of another optical asymmetric transmission structure provided in the embodiment of the present disclosure, and as shown in fig. 7, the optical asymmetric transmission structure further includes: a second substrate 303 provided opposite to the first substrate 301 in a cassette, and an anisotropic material 304 between the first substrate 301 and the second substrate 303; the anisotropic material 304 is filled between the adjacent grating units 302 and between the grating units 302 and the second substrate 303.
The refractive index of the anisotropic material 304 has a certain difference with the direction, that is, the direction of the anisotropic material 304 can be changed by applying an external force to change the arrangement direction of the anisotropic material 304, so as to change the refractive index. The refractive index of anisotropic material 304 in any direction is smaller than that of dielectric layer 3022, and when light is transmitted in the opposite direction, the direction of anisotropic material 304 can be adjusted so that the refractive index of anisotropic material 304 is different from that of dielectric layer 3022 to a greater extent, and the refractive index matching degree between the two is lower, thereby increasing the reflection effect of light and reducing the transmittance of light. Or, the direction of the anisotropic material may be adjusted, so that the refractive index of the anisotropic material 304 is closer to the refractive index of the dielectric layer 3022, and the matching degree of the refractive indexes of the anisotropic material and the dielectric layer is higher, thereby reducing the reflection effect of the light, improving the transmittance of the light, and realizing the tunability of the optical asymmetric transmission performance of the overall optical asymmetric transmission structure.
In some embodiments, anisotropic material 304 includes: a liquid crystal material.
Specifically, the anisotropic material 304 may be a liquid crystal material, which has different refractive indices in different deflection directions, for example, the liquid crystal material E7 has a refractive index of 1.74 when aligned perpendicular to the first substrate 301 and a refractive index of 1.52 when aligned parallel to the first substrate 301. It will be appreciated that other refractive index variable materials may be selected, not listed here.
In some embodiments, as shown in fig. 7, the optical asymmetric transmission structure further comprises: a first electrode layer 305 and a second electrode layer 306 which are oppositely disposed; first electrode layer 305 is located between first substrate 301 and dielectric layer 3022; the second electrode layer 306 is positioned on one side of the second substrate 303 close to the first substrate 301; the liquid crystal material is filled between the first electrode layer 305 and the second electrode layer 306.
In practical applications, the first electrode layer 305 and the second electrode layer 306 may apply different voltage signals, and an electric field is generated between the two to drive the liquid crystal material between the two to deflect, so that the liquid crystal material has different refractive indexes, thereby achieving tunability of the optical asymmetric transmission performance of the overall optical asymmetric transmission structure.
In some embodiments, as shown in fig. 7, the optical asymmetric transmission structure further comprises: an alignment layer 307; the alignment layer 307 is located on a side of the second electrode layer 306 facing away from the second substrate 303.
The alignment layer 307 may anchor the liquid crystal material such that the liquid crystal material is fixed at an initial angle when no electric field is applied, thereby preventing light leakage due to disordered liquid crystal arrangement. In practical applications, the alignment layer 307 may be made of Polyimide (PI).
The performance of the optical asymmetric transmission structure provided by the embodiment of the present disclosure will be described in detail below with reference to the accompanying drawings. Specifically, in the asymmetric optical transmission structure, the grating unit 302 is in a truncated cone shape and is arranged in a tetragonal lattice manner, the dielectric layer 3022 is formed of silicon nitride, the diameter of the first bottom surface is 500nm, the diameter of the second bottom surface is 300nm, the thickness is 550nm, and the distance between adjacent dielectric layers 3022 is 600 nm; the metal layer 3021 is formed of aluminum, the diameter of the third bottom surface is 300nm, the diameter of the fourth bottom surface is 200nm, the thickness is 125nm, the first substrate 301 and the second substrate 303 are made of glass, and the anisotropic material 304 is a liquid crystal material E7.
Fig. 8 is a schematic diagram of transmittance of the asymmetric optical transmission structure provided in the embodiment of the present disclosure when no electric field is applied, and as shown in fig. 8, when no voltage is applied to the first electrode layer 305 and the second electrode layer 306, the liquid crystal material E7 is in a horizontal arrangement, and its refractive index is 1.52. When light is transmitted from the forward direction, the light transmittance of the whole optical asymmetric transmission structure is about 0.7, and when the light is transmitted from the reverse direction, the light transmittance of the whole optical asymmetric transmission structure is about 0.2.
Fig. 9 is a schematic diagram of transmittance of the asymmetric optical transmission structure provided in the embodiment of the present disclosure when an electric field is applied, and as shown in fig. 9, when a voltage is applied to both the first electrode layer 305 and the second electrode layer 306, the liquid crystal material E7 is in a vertical arrangement, and its refractive index is 1.74. When light is transmitted from the forward direction, the light transmittance of the whole optical asymmetric transmission structure is about 0.7, and when the light is transmitted from the reverse direction, the light transmittance of the whole optical asymmetric transmission structure is about 0.4. It can be seen that due to the effect of the liquid crystal material E7, when light is transmitted from opposite directions, the light transmittance of the entire optical asymmetric transmission structure can be adjusted between 0.2 and 0.4, so as to achieve tunability of the optical asymmetric transmission performance of the entire optical asymmetric transmission structure.
The following description will be made with reference to the accompanying drawings to illustrate a manufacturing process of the optical asymmetric transmission structure provided in the embodiments of the present disclosure. Fig. 10 is a flowchart of a manufacturing process of an optical asymmetric transmission structure according to an embodiment of the present disclosure, and as shown in fig. 10 and fig. 7, the manufacturing process of the optical asymmetric transmission structure includes the following steps:
s1, depositing a layer of ITO on the first substrate 301 by a sputtering process to form the first electrode layer 305, wherein the first substrate 301 may be glass.
S2, forming two sacrificial layers on the first electrode layer 305 by spin coating;
s3, etching the corresponding position of the sacrificial layer through an etching process to form an accommodating part capable of accommodating the grating unit 302;
s4, forming a dielectric layer 3022 and a metal layer 3021 on the sacrificial layer and in the receiving portion by using vapor deposition and sputtering processes, and stripping off the redundant dielectric layer 3022 and metal layer 3021 and the sacrificial layer to form the grating unit 302;
s5, depositing a layer of ITO on the second substrate 303 by sputtering process to form the second electrode layer 306, wherein the second substrate 303 may be glass.
S6, a phase-matching layer 307 is formed on the second electrode layer 306 by a spin-coating process.
S7, two-part pair-cell lamination is performed through S4 and S6, and anisotropic material 304, such as liquid crystal material, is filled therein. To this end, the complete optical asymmetric transmission structure as shown in fig. 7 is formed.
It can be seen from the above-mentioned process flow of the optical asymmetric transmission structure that the optical asymmetric transmission structure provided by the embodiment of the present disclosure has a simple structure, the fabrication process can be completely compatible with the fabrication processes of the semiconductor device and the display panel, and the existing fabrication process of the semiconductor device or the display panel can be adopted for fabrication, so that the optical asymmetric transmission device, the semiconductor device and the display panel can be conveniently integrated, and the fabrication and development costs can be saved.
In a second aspect, embodiments of the present disclosure provide an optical device comprising an optical asymmetric transmission structure as provided above. The optical device can be applied to scenes such as glass of buildings, automobiles and trains, and realizes the asymmetric transmission of light. The implementation principle and the technical effect of the optical device can refer to the above discussion of the technical effect of the display panel, and are not described herein again.
It is to be understood that the above embodiments are merely exemplary embodiments that are employed to illustrate the principles of the present disclosure, and that the present disclosure is not limited thereto. It will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the disclosure, and these are to be considered as the scope of the disclosure.
Claims (14)
1. An optical asymmetric transmission structure, comprising: the grating array comprises a first substrate and a plurality of grating units positioned on the first substrate;
the grating unit includes: a metal layer; the thickness of the metal layer is less than or equal to 500 nanometers.
2. The asymmetric transmission structure of claim 1, wherein the grating unit further comprises: a dielectric layer;
the dielectric layer is located between the first substrate and the metal layer.
3. The asymmetric transmission structure as claimed in claim 2, wherein an orthogonal projection of the metal layer on the first substrate at least partially overlaps an orthogonal projection of the dielectric layer on the first substrate.
4. The asymmetric transmission structure as claimed in claim 3, wherein an orthogonal projection of the metal layer on the first substrate falls within an orthogonal projection of the dielectric layer on the first substrate.
5. The asymmetric transmission structure as claimed in claim 4, wherein the center point of the metal layer and the center point of the dielectric layer are located on the same line.
6. The asymmetric transmission structure as claimed in claim 2, wherein the metal layer has a first bottom surface facing away from the first substrate and a second bottom surface disposed opposite to the first bottom surface, and the dielectric layer has a third bottom surface facing away from the first substrate and a fourth bottom surface disposed opposite to the third bottom surface;
the area of the first bottom surface is smaller than or equal to that of the second bottom surface, the area of the second bottom surface is smaller than or equal to that of the third bottom surface, and the area of the third bottom surface is smaller than or equal to that of the fourth bottom surface.
7. The asymmetric transmission structure as recited in claim 6, wherein the metal layer further has a first side surface connected to both the first bottom surface and the second bottom surface, and the dielectric layer further has a second side surface connected to both the third bottom surface and the fourth bottom surface;
the first side surface is provided with a first side edge and a second side edge which are oppositely arranged along the direction vertical to the first substrate; the second side surface is provided with a third side edge and a fourth side edge which are oppositely arranged along the direction vertical to the first substrate;
the joint of the first side edge and the third side edge is in arc connection or straight line connection;
the junction of the second side edge and the fourth side edge is in arc connection or straight line connection.
8. The asymmetric transmission structure of claim 2, wherein the material of the metal layer comprises: one or more of aluminum, silver, or gold; the material of the dielectric layer comprises: silicon nitride.
9. The asymmetric light transmission structure as claimed in claim 1 or 2, wherein the plurality of grating units are arranged in a triangular lattice arrangement, a square lattice arrangement or a hexagonal lattice arrangement.
10. The asymmetric transmission structure as claimed in claim 1 or 2, further comprising: a second substrate arranged opposite to the first substrate, and an anisotropic material between the first substrate and the second substrate;
the anisotropic material is filled between the grating units and the second substrate.
11. The asymmetric transmission structure of claim 10, wherein the anisotropic material comprises: a liquid crystal material.
12. The asymmetric transmission structure of claim 11, further comprising: the first electrode layer and the second electrode layer are oppositely arranged;
the first electrode layer is positioned between the first substrate and the dielectric layer;
the second electrode layer is positioned on one side of the second substrate close to the first substrate;
the liquid crystal material is filled between the first electrode layer and the second electrode layer.
13. The asymmetric transmission structure of claim 12, further comprising: an alignment layer;
the alignment layer is located on one side, away from the second substrate, of the second electrode layer.
14. An optical device comprising an optical asymmetric transmission structure as claimed in any one of claims 1 to 13.
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