CN113308733A - POLY-SI chemical vapor deposition process method for improving bonding of silicon wafer and quartz boat - Google Patents
POLY-SI chemical vapor deposition process method for improving bonding of silicon wafer and quartz boat Download PDFInfo
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- CN113308733A CN113308733A CN202110583814.2A CN202110583814A CN113308733A CN 113308733 A CN113308733 A CN 113308733A CN 202110583814 A CN202110583814 A CN 202110583814A CN 113308733 A CN113308733 A CN 113308733A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
- C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
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Abstract
The invention relates to the technical field of semiconductor processing. A POLY-SI chemical vapor deposition process method for improving bonding of a silicon wafer and a quartz boat is characterized in that in a thick film POLY-SI process with growth larger than 10000A, the silicon wafer and the carrier boat can generate adhesion due to growth of POLY-SI at a contact point position, the larger the thickness of POLY-SI is, the larger the bonding degree is, and further corner defect and edge collapse are caused to generate cracks. This patent is through growing the thick POLY-SI of 1/2 target films earlier, and the manipulator takes off the silicon chip from the boat after cooling under the nitrogen protection state and puts back and go on the boat and carry out the POLY-SI that remains 1/2 target films thick. Through intermittent growth and protection of a nitrogen state, adhesion of the boat and the silicon wafer in the thick film POLY-SI growth process is avoided, and growth of a natural oxidation layer is avoided. The process can avoid corner chipping and edge chipping caused by bonding of the boat and the silicon wafer.
Description
Technical Field
The invention belongs to the technical field of semiconductor processing, and particularly relates to a POLY-SI chemical vapor deposition process method for improving the adhesion of a silicon wafer and a quartz boat.
Background
The polycrystalline silicon film process is commonly used for gettering of monocrystalline silicon wafers, the bonding between the silicon wafers and the carrier boat cannot be avoided in the polycrystalline silicon film growth process, the bonding degree is heavier along with the increase of the thickness of the film, corner defects and edge breakage are shown at the edges of the silicon wafers, the strength of the silicon wafers is further influenced, and the loss of the split wafers is caused.
The commonly used modes for reducing the bonding degree are the modes of improving the roughness of the boat, changing the appearance of the boat and the like, but the modes are basically ineffective to the thick film process, and the proportions of unfilled corners and edge breakage loss are extremely high.
Disclosure of Invention
Aiming at the situation, in order to overcome the defects of the prior art, the invention provides the POLY-SI chemical vapor deposition process method for improving the bonding of the silicon wafer and the quartz boat, and the proportions of unfilled corners and edge breakage in the background technology are effectively reduced.
The technical scheme adopted by the invention is as follows:
a POLY-SI chemical vapor deposition process method for improving the adhesion of a silicon wafer and a quartz boat is characterized in that the silicon wafer is placed on the quartz boat and enters a reaction chamber to grow a POLY-SI with a target film thickness of 1/2, then the reaction chamber is withdrawn and cooled under the nitrogen protection state, after the cooling is finished, the silicon wafer is taken down from the quartz boat through a mechanical arm and then is placed back on the quartz boat, and the quartz boat is sent into the reaction chamber again to grow the POLY-SI with the residual film thickness of 1/2.
Preferably, the oxygen content of the environment in which the silicon wafer is cooled is less than 10ppm, and the control of the oxygen content is realized through nitrogen protection.
Preferably, the nitrogen flow rate is 400 SLM.
Preferably, the nitrogen is flow-controlled using a restrictor plate, and the nitrogen purity is > 99.999%.
Preferably, after the silicon wafer is withdrawn from the reaction chamber, the silicon wafer is cooled at room temperature, and after the silicon wafer is cooled to room temperature, the silicon wafer is taken down from the quartz boat by the manipulator and then is placed back to the quartz boat.
Preferably, the oxygen content of the environment where the silicon chip is located is monitored in real time, and when the oxygen content rises to exceed a control line, the nitrogen is immediately and automatically controlled to be introduced to purge the oxygen in the environment.
Preferably, the reaction is carried out in a constant temperature plant, the plant temperature being 22 ± 2 ℃.
The process is characterized in that:
based on the design of the original equipment, the intermittent growth of the polycrystalline silicon film can be realized only by adjusting the process flow design and the manipulator chip taking and placing flow, and the adhesion of the silicon chip and the boat in the polycrystalline film deposition process is weakened through the intermittent growth.
The conventional silicon wafer cooling process is carried out in clean air, and the high-temperature silicon wafer just taken out of the furnace in the cooling process reacts with oxygen in the air to generate a silicon oxide thin layer with the thickness of 200 angstroms. By controlling the oxygen content of the silicon wafer cooling environment, the generation of an oxide layer between polycrystalline silicon and polycrystalline silicon in the intermittent growth process is avoided, and the high-purity characteristic of the polycrystalline silicon film is realized.
Drawings
Fig. 1 is a partial structural schematic view of a furnace platform.
FIG. 2 is a schematic diagram of a moving process of a silicon wafer.
In fig. 1, 1 is a reaction chamber, 2 is a manipulator for moving a silicon wafer, 3 is a silicon wafer, 4 is a quartz boat, and 5 is a nitrogen atmosphere generating device.
In FIG. 2, 6 is the silicon wafer on the silicon boat, 7 is the silicon wafer moving to the robot, and 8 is the silicon wafer returned to the silicon boat by the robot.
Detailed Description
The following examples are intended to illustrate the invention in detail and are not intended to limit the scope of the invention in any way.
In the conventional POLY-SI film growth process, a silicon wafer 2 is placed on a quartz boat 4 by a manipulator 2 and enters a reaction chamber 1 to complete the film growth at one time. And after the silicon wafer 3 grows to the target thickness, the silicon wafer 3 exits the reaction chamber 1 and is cooled in clean air, and after the cooling is finished, the silicon wafer 3 is taken down from the quartz boat and is placed back into the silicon wafer basket by the manipulator 2, so that the process is finished. According to the process, in the growth process of the polycrystalline silicon film, the silicon wafer and the carrier boat are bonded unavoidably, the bonding degree is heavier along with the increase of the thickness of the film, and the edge of the silicon wafer is subjected to corner defect and edge breakage, so that the strength of the silicon wafer is influenced, and the loss of the split wafer is caused.
In the process of the invention, the silicon wafers 3 are placed on the quartz boat 4, enter the reaction chamber 1, grow a film with 1/2 target film thickness (enter the reaction chamber 1, grow a film with a certain thickness by controlling the process time, namely control whether the film reaches 1/2 target film thickness or not), then exit the reaction chamber 1, cool in the clean nitrogen environment 5 to room temperature, the reaction is carried out in a constant temperature workshop, the workshop temperature is 22 +/-2 ℃, after cooling, all the silicon wafers 3 are moved from the quartz boat 4 by the manipulator 2 and then stored on the manipulator (only when the silicon wafers are separated from the quartz boat 4 and then placed on the quartz boat 4), and then are placed back on the quartz boat 4. After the movement is finished, the quartz boat 4 is sent into the reaction chamber 1 again to carry out the growth of the residual thickness POLY-SI. And after the growth of the residual target film thickness POLY-SI is finished, the quartz boat 4 exits from the reaction chamber 1, and after the cooling in the nitrogen environment 5 is finished, the silicon wafer 3 is taken down from the quartz boat 4 by the manipulator 2 and placed in the silicon wafer basket, so that the process is finished.
The nitrogen purity is 99.999 percent in the cooling process, the nitrogen flow is 400SLM, and the oxygen content of the environment where the silicon chip is located is less than 10 ppm.
By controlling the oxygen content of the environment where the silicon wafer is located, the growth of a natural oxide layer on the surface of the silicon wafer can be avoided.
The unfilled corner proportion of the thick film POLY-SI product processed by the process is as follows:
| original process | Improved process | |
| Unfilled corner ratio | >5% | <1% |
Therefore, the unfilled corner proportion is reduced by the novel process.
In the process, the oxygen content of the environment where the silicon chip is located is monitored and controlled in real time by using a sensor. When the oxygen content exceeds the control line, large-flow clean nitrogen is immediately introduced to purify the oxygen.
When the oxygen content is in the control range, only a small flow of nitrogen is needed for protection. The amount of nitrogen used is about 40 SLM.
In the process of growing a thick film POLY-SI larger than 10000A, a silicon wafer and a carrier boat can generate adhesion due to the growth of POLY-SI at a contact point, and the thicker the POLY-SI is, the larger the adhesion degree is, so that corner defect and edge collapse are caused to generate cracks. This patent is through growing the thick POLY-SI of 1/2 target films earlier, and the manipulator takes off the silicon chip from the boat after cooling under the nitrogen protection state and puts back and go on the boat and carry out the POLY-SI that remains 1/2 target films thick. Through intermittent growth and protection of a nitrogen state, adhesion of the boat and the silicon wafer in the thick film POLY-SI growth process is avoided, and growth of a natural oxidation layer is avoided. The process can avoid corner chipping and edge chipping caused by bonding of the boat and the silicon wafer.
While there have been shown and described what are at present considered the fundamental principles of the invention, its essential features and advantages, it will be understood by those skilled in the art that the invention is not limited by the embodiments described above, which are merely illustrative of the principles of the invention, but various changes and modifications may be made therein without departing from the spirit and scope of the invention as defined by the appended claims and their equivalents.
Claims (7)
1. A POLY-SI chemical vapor deposition process method for improving the adhesion of a silicon wafer and a quartz boat is characterized in that the silicon wafer is placed on the quartz boat and enters a reaction chamber to grow a POLY-SI with a target film thickness of 1/2, then the reaction chamber is withdrawn and cooled under the nitrogen protection state, after the cooling is finished, the silicon wafer is taken down from the quartz boat through a mechanical arm and then is placed back on the quartz boat, and the quartz boat is sent into the reaction chamber again to grow the POLY-SI with the residual film thickness of 1/2.
2. The method of claim 1, wherein the atmosphere in which the silicon wafer is cooled has an oxygen content of less than 10ppm, and the oxygen content is controlled under nitrogen protection.
3. The method of claim 2, wherein the nitrogen flow rate is 400 SLM.
4. The method of claim 1, wherein said nitrogen is flow controlled using a restrictor plate, and the nitrogen purity is > 99.999%.
5. The method of claim 1, wherein the wafer is cooled at room temperature after exiting the reaction chamber, and after cooling to room temperature, the wafer is removed from the quartz boat by a robot and returned to the quartz boat.
6. The POLY-SI CVD process for improving the adhesion between the silicon wafer and the quartz boat as claimed in claim 2, wherein the oxygen content of the environment where the silicon wafer is located is monitored in real time, and when the oxygen content rises beyond the control line, the introduction of nitrogen is automatically controlled to purge the oxygen in the environment.
7. The method of claim 1, wherein the reaction is carried out in a constant temperature plant at a temperature of 22 ± 2 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110583814.2A CN113308733A (en) | 2021-05-27 | 2021-05-27 | POLY-SI chemical vapor deposition process method for improving bonding of silicon wafer and quartz boat |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110583814.2A CN113308733A (en) | 2021-05-27 | 2021-05-27 | POLY-SI chemical vapor deposition process method for improving bonding of silicon wafer and quartz boat |
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| CN113308733A true CN113308733A (en) | 2021-08-27 |
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| CN202110583814.2A Pending CN113308733A (en) | 2021-05-27 | 2021-05-27 | POLY-SI chemical vapor deposition process method for improving bonding of silicon wafer and quartz boat |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010043362A (en) * | 2009-11-24 | 2010-02-25 | Hitachi Kokusai Electric Inc | Treatment device, method for forming film and heat treatment method |
| CN102115871A (en) * | 2010-01-06 | 2011-07-06 | 上海华虹Nec电子有限公司 | Method for avoiding slice adhesion during sputtering deposition of aluminum alloy |
| CN103668101A (en) * | 2012-09-21 | 2014-03-26 | 无锡华润华晶微电子有限公司 | Wafer fixing device used in deposition film forming device |
| CN104157728A (en) * | 2014-07-21 | 2014-11-19 | 深圳深爱半导体股份有限公司 | Silicon chip diffusion treatment method and solar cell manufacturing method |
| US20160093487A1 (en) * | 2014-09-26 | 2016-03-31 | Asm Ip Holding B.V. | Method for depositing films on semiconductor wafers |
| CN109904058A (en) * | 2017-12-11 | 2019-06-18 | 有研半导体材料有限公司 | A method of reducing silicon polished front edge damage |
-
2021
- 2021-05-27 CN CN202110583814.2A patent/CN113308733A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010043362A (en) * | 2009-11-24 | 2010-02-25 | Hitachi Kokusai Electric Inc | Treatment device, method for forming film and heat treatment method |
| CN102115871A (en) * | 2010-01-06 | 2011-07-06 | 上海华虹Nec电子有限公司 | Method for avoiding slice adhesion during sputtering deposition of aluminum alloy |
| CN103668101A (en) * | 2012-09-21 | 2014-03-26 | 无锡华润华晶微电子有限公司 | Wafer fixing device used in deposition film forming device |
| CN104157728A (en) * | 2014-07-21 | 2014-11-19 | 深圳深爱半导体股份有限公司 | Silicon chip diffusion treatment method and solar cell manufacturing method |
| US20160093487A1 (en) * | 2014-09-26 | 2016-03-31 | Asm Ip Holding B.V. | Method for depositing films on semiconductor wafers |
| CN109904058A (en) * | 2017-12-11 | 2019-06-18 | 有研半导体材料有限公司 | A method of reducing silicon polished front edge damage |
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