CN113299792A - 一种晶硅电池镀膜工艺自动化控制方法 - Google Patents
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Abstract
本发明涉及太阳能电池生产领域。一种晶硅电池镀膜工艺自动化控制方法,统计每次石墨舟中镀膜完成后硅片的数据参数作为下次石墨舟中镀膜时设置的依据,其中硅片的数据参数包括:本次镀膜前每张硅片的平均比表面积s、本次镀膜后石墨舟中心区域的每张硅片的平均镀膜厚度h1、本次镀膜后石墨舟边缘区域的每张硅片的平均镀膜厚度h2、本次镀膜时间t、本次镀膜时石墨舟不同区域温度c、本次射频电流i、本次气体流量q,本次比值系数a=2s/(h1+h2)。本发明的有益效果是:可最大化电池片镀膜工序成品率,且无需人工参与,大大提高生产效率和判定精准度。
Description
技术领域
本发明涉及太阳能电池生产领域。
背景技术
由于矿石能源日益减少,对可再生能源的利用受到国内外的高度重视,近年来太阳电池行业在能源行业中的增长速度较快。然而,随着技术的不断成熟,要求太阳电池的质量和外观也越来越高。目前,常用等离子增强化学气相沉积(PECVD)法沉积氮化硅,在晶硅太阳电池表面上一层小于100纳米的薄膜,氮化硅薄膜作为一种重要的薄膜材料,具有优良的光电性能、钝化性能和机械性能。它不仅是优良的太阳电池减反射膜,而且还有很好的表面和体钝化作用[1],能提高太阳电池的转换效率。在实际商业运用中,用PECVD沉积氮化硅薄膜的技术已较为成熟,光伏太阳电池行业广泛使用板式PECVD和管式PECVD,但管式PECVD法制备的氮化硅薄膜色差问题难以解决,色差会使太阳电池的外观不良,必须重新晶硅太阳电池氮化硅膜产生色差的影响因素研究返工,使得生产成本高居不下。在具体的推广应用过程中,如何结合光伏产品制造自身的特点,将产品制造工艺控制融合于一体,成为当前光伏智能制造的最大难点。
发明内容
本发明的目的是:通过对镀膜后电池片的进行统计分析,并根据统计结果,控制工艺反应装置,不断优化,从而提高镀膜电池片的成品率。
本发明所采用的技术方案是:一种晶硅电池镀膜工艺自动化控制方法,统计每次石墨舟中镀膜完成后硅片的数据参数作为下次石墨舟中镀膜时设置的依据,其中硅片的数据参数包括:本次镀膜前每张硅片的平均比表面积s、本次镀膜后石墨舟中心区域的每张硅片的平均镀膜厚度h1、本次镀膜后石墨舟边缘区域的每张硅片的平均镀膜厚度h2、本次镀膜时间t、本次镀膜时石墨舟不同区域温度c、本次射频电流i、本次气体流量q,本次比值系数a=2s/(h1+h2);通过经验获得经验气体流量q0、经验射频电流i0、镀膜时石墨舟不同区域最佳温度c0、镀膜最佳厚度h0时,镀膜前比表面积为s0的硅片最佳镀膜时间t0,最佳比值系数b=s0/c0,下次镀膜时数据参数按如下条件确定
条件一、当q= q0,i= i0时,如果b>a,则下次石墨舟中镀膜时,下次镀膜时间为t-1s,其它数据参数保持与本次相同;如果b<a,则下次石墨舟中镀膜时,下次镀膜时间为t+1s,其它数据参数保持与本次相同。
条件二、当q= q0,i= i0时,如果b=a,且(h1-h0)/h0>k1时,说明石墨舟舟片本身存在问题需要修理石墨舟周片,k1为中心区域经验值偏差;
条件三、当q= q0,i= i0时,如果b=a,且(h2-h0)/h0>k2时,说明石墨舟需要更换清洗,k2为边缘区域经验值偏差;
条件四、当q= q0,i= i0,b=a,(h1-h0)/h0<k1,(h2-h0)/h0<k2时,下次石墨舟中镀膜时,其它数据参数保持与本次相同。
本发明的有益效果是:可最大化电池片镀膜工序成品率,且无需人工参与,大大提高生产效率和判定精准度。
具体实施方式
八、具体实施方式:
本发明提出一种晶硅电池镀膜工艺自动化控制方法,通过对镀膜后电池片的膜色进行统计分析,并根据统计结果,控制工艺反应装置,不断优化,从而提高镀膜电池片的成品率。具体实施如下:
本控制方法中,涉及到模块包括自动化控制中心PLC、数据处理中、硅片比表面积测试装置、电池片膜色测试装置、执行机构。
硅片比表面积测试装置,该装置按照一定的抽样比例测试镀膜前硅片表面比表面积,具体测试方法可使用3d显微镜对样品进行测试。
电池片膜色测试装置,负责测试镀膜后电池片膜厚度,包括单片电池片中心区域、边缘区域,主要测试方法为CCD成像技术,并利用膜厚与色度或灰度值对应关系。
数据处理中心,负责处理每舟电池片膜厚或硅片表面比表面积数据,根据不同的统计规则,预警实际存在的镀膜异常问题、反馈优化结果至自动化控制中心。其中统计规则包括如下部分:
统计每舟硅片比表面积平均值,与标准值进行比较,并按照固定算式调整所有炉管镀膜反应时间。首先需选取产线一定数量镀膜前硅片(比表面积相差较大),测试其比表面积,并根据镀膜后膜厚值,建立比表面积与膜厚值的相关系数,并以此系数作为调整镀膜反应时间的依据。
统计固定炉管(电池片镀膜反应装置)整舟电池片中心区域(本领域技术人员知晓石墨舟两侧的两列为边缘区域,其它为中心区域)平均膜厚,并与标准值(通过经验获取)进行对比,从而确定对应炉管沉积反应时间补偿是否需要调整。
统计每舟同一舟片电池片中心区域平均膜厚,并与标准值进行对比,从而确定舟片本身是否存在问题,并将结果反馈至自动化控制中心。
统计固定炉管每舟同一区电池片中心区域平均膜厚,并与标准值进行对比,从而确定对应反应炉管此温区温度补偿值是否需要调整。
统计固定舟固定位置连续两次电池片中心或边缘平均膜厚是否超出标准值,从而确定固定舟此位置卡点(用于固定电池片)是否存在问题,并将结果反馈至自动化控制中心。
统计整舟电池片边缘区域平均膜厚,并与标准值进行对比,从而确定此舟是否需要更换清洗,并将结果反馈至自动化控制中心。
自动化控制中心可记录每次反应所对应的炉管及石墨舟号,并将数据传至数据处理中心,然后负责将数据处理中心处理后结果传输至执行机构或进行预警报告。
通过以上措施,本发明专利可最大化电池片镀膜工序成品率,且无需人工参与,大大提高生产效率和判定精准度。
具体如下
一种晶硅电池镀膜工艺自动化控制方法,统计每次石墨舟中镀膜完成后硅片的数据参数作为下次石墨舟中镀膜时设置的依据,其中硅片的数据参数包括:本次镀膜前每张硅片的平均比表面积s、本次镀膜后石墨舟中心区域的每张硅片的平均镀膜厚度h1、本次镀膜后石墨舟边缘区域的每张硅片的平均镀膜厚度h2、本次镀膜时间t、本次镀膜时石墨舟不同区域温度c、本次射频电流i、本次气体流量q,本次比值系数a=2s/(h1+h2);通过经验获得经验气体流量q0、经验射频电流i0、镀膜时石墨舟不同区域最佳温度c0、镀膜最佳厚度h0时,镀膜前比表面积为s0的硅片最佳镀膜时间t0,最佳比值系数b=s0/c0,下次镀膜时数据参数按如下条件确定
条件一、当q= q0,i= i0时,如果b>a,则下次石墨舟中镀膜时,下次镀膜时间为t-1s,其它数据参数保持与本次相同;如果b<a,则下次石墨舟中镀膜时,下次镀膜时间为t+1s,其它数据参数保持与本次相同。
条件二、当q= q0,i= i0时,如果b=a,且(h1-h0)/h0>k1时,说明石墨舟舟片本身存在问题需要修理石墨舟周片,k1为中心区域经验值偏差,通常是0.1-0.5;
条件三、当q= q0,i= i0时,如果b=a,且(h2-h0)/h0>k2时,说明石墨舟需要更换清洗,k2为边缘区域经验值偏差,通常是0.1-0.5;
条件四、当q= q0,i= i0,b=a,(h1-h0)/h0<k1,(h2-h0)/h0<k2时,下次石墨舟中镀膜时,其它数据参数保持与本次相同。
由于对于镀膜装置来说气体流量和射频电流是精确可控的,因此不对多加研究,而硅片比表面、镀膜厚度等每次镀膜总是有一些出入的,因此需要进行连续控制。
Claims (1)
1.一种晶硅电池镀膜工艺自动化控制方法,其特征在于:统计每次石墨舟中镀膜完成后硅片的数据参数作为下次石墨舟中镀膜时设置的依据,其中硅片的数据参数包括:本次镀膜前每张硅片的平均比表面积s、本次镀膜后石墨舟中心区域的每张硅片的平均镀膜厚度h1、本次镀膜后石墨舟边缘区域的每张硅片的平均镀膜厚度h2、本次镀膜时间t、本次镀膜时石墨舟不同区域温度c、本次射频电流i、本次气体流量q,本次比值系数a=2s/(h1+h2);通过经验获得经验气体流量q0、经验射频电流i0、镀膜时石墨舟不同区域最佳温度c0、镀膜最佳厚度h0时,镀膜前比表面积为s0的硅片最佳镀膜时间t0,最佳比值系数b=s0/c0,下次镀膜时数据参数按如下条件确定
条件一、当q= q0,i= i0时,如果b>a,则下次石墨舟中镀膜时,下次镀膜时间为t-1s,其它数据参数保持与本次相同;如果b<a,则下次石墨舟中镀膜时,下次镀膜时间为t+1s,其它数据参数保持与本次相同;
条件二、当q= q0,i= i0时,如果b=a,且(h1-h0)/h0>k1时,说明石墨舟舟片本身存在问题需要修理石墨舟周片,k1为中心区域经验值偏差;
条件三、当q= q0,i= i0时,如果b=a,且(h2-h0)/h0>k2时,说明石墨舟需要更换清洗,k2为边缘区域经验值偏差;
条件四、当q= q0,i= i0,b=a,(h1-h0)/h0<k1,(h2-h0)/h0<k2时,下次石墨舟中镀膜时,其它数据参数保持与本次相同。
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