CN113296625A - Double-sided photo-thermal reaction selection lock and manufacturing method thereof - Google Patents
Double-sided photo-thermal reaction selection lock and manufacturing method thereof Download PDFInfo
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- CN113296625A CN113296625A CN202010113460.0A CN202010113460A CN113296625A CN 113296625 A CN113296625 A CN 113296625A CN 202010113460 A CN202010113460 A CN 202010113460A CN 113296625 A CN113296625 A CN 113296625A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 238000002955 isolation Methods 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 8
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052720 vanadium Inorganic materials 0.000 claims description 5
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 5
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 230000006698 induction Effects 0.000 abstract description 14
- 239000010408 film Substances 0.000 description 92
- 238000005516 engineering process Methods 0.000 description 17
- 230000003287 optical effect Effects 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
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- General Physics & Mathematics (AREA)
- Human Computer Interaction (AREA)
- Optics & Photonics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention discloses a double-sided photothermal reaction selection lock and a manufacturing method thereof, wherein the double-sided photothermal reaction selection lock comprises a photoreaction substrate, a first side and a second side which are oppositely arranged are arranged on the photoreaction substrate, a plurality of first thermal reaction films are transversely arranged on the first side in parallel, and the first thermal reaction films are not contacted with each other to expose a plurality of first light sensing areas; the second surface of the photoreaction substrate is longitudinally and mutually provided with a plurality of second thermal reaction films in parallel, the second thermal reaction films are not mutually contacted to expose a plurality of second light sensing areas, and a plurality of electrode films are respectively positioned at two sides of each first thermal reaction film and each second thermal reaction film to lead out electric signals. The invention can simultaneously detect heat induction and light induction or select one of the heat induction and the light induction to be used for induction, and has high using flexibility.
Description
Technical Field
The present invention relates to a technology applied to a touch panel, and more particularly, to a double-sided photothermal reaction selection lock for simultaneously sensing the position of a light source and a heat source and a method for manufacturing the same.
Background
Since the advent of handheld consumer electronic devices, the development of touch panels as important accessories has advanced, and the technology of touch panels has been developed from resistive touch panels at first, to capacitive touch panels at present, which are common touch technologies. In addition, the touch panel has an infrared (optical) touch technology, an electromagnetic touch technology, an acoustic wave touch technology, a thermal sensing touch technology, an optical sensing touch technology, and the like.
The thermal sensing type touch technology detects the position of the finger of the user currently by means of sensing the temperature of the finger of the user. A plurality of thermal sensors are distributed in a touch panel of the thermal induction type touch technology, a high-impedance insulating layer is required to be arranged among the thermal sensors to avoid signal interference among the thermal sensors, and when the thermal sensors sense temperature, the position of a finger of a user can be judged according to the position of the sensor sensing the temperature.
The principle of the optical sensing touch technology is to use amorphous silicon (Alpha-Si, a-Si) as a touch panel, which has the property of generating photocurrent when illuminated, and is mostly applied to an Array substrate of a TFT-LCD (Thin film transistor liquid crystal display) panel. When a user touches the touch panel, the illumination amount on the touch panel changes, and then the photocurrent signal of the contact point, which changes due to the change of the illumination amount, can be read out to convert the photocurrent signal into a digital signal, so as to calculate the X, Y coordinates of the contact point on the touch panel.
However, in the past, because the touch panel considers the problem of mutual interference between signals, there is no part combining the thermal sensing type touch technology and the optical sensing type touch technology, and there is no effective technology to combine the thermal sensing type touch technology and the optical sensing type touch technology, so that the applicable field of the touch panel is still limited.
In view of the above, the present invention provides a double-sided photothermal reaction selective lock and a method for making the same to overcome the above problems.
Disclosure of Invention
The present invention provides a double-sided photothermal reaction selection lock and a method for manufacturing the same, which can detect thermal induction and light induction simultaneously, or select only one of them for induction, so that the maneuverability of the lock is relatively improved.
Another objective of the present invention is to provide a double-sided photothermal reaction selective lock and a method for manufacturing the same, in which different axial thermal reaction films are respectively disposed on two sides of a substrate, so as to prevent the thermal reaction films disposed on the same substrate from interfering with a photosensitive substrate, thereby effectively achieving simultaneous thermal induction and light sensing.
Another objective of the present invention is to provide a double-sided photothermal reaction selective lock and a method for manufacturing the same, in which different axial thermal reaction films are disposed on two sides of a substrate, so as to avoid the need of disposing an insulating layer to isolate adjacent thermal reaction films when different axial thermal reaction films are disposed on the same substrate, thereby effectively reducing the structural complexity and cost.
To achieve the above objective, the present invention provides a double-sided photothermal reaction selective lock, which includes a photoreaction substrate having a first side and a second side opposite to each other, wherein the first side is provided with a plurality of first thermal reaction films, the plurality of first thermal reaction films are transversely and mutually parallel disposed on the first side of the photoreaction substrate, the plurality of first thermal reaction films are not in contact with each other, and the photoreaction substrate is exposed between the plurality of first thermal reaction films to serve as a plurality of first photo-sensing areas. The second surface of the photoreaction substrate is provided with a plurality of second thermal reaction films, the plurality of second thermal reaction films are longitudinally and mutually arranged on the second surface of the photoreaction substrate in parallel, the plurality of second thermal reaction films are not contacted with each other, the photoreaction substrate is exposed among the plurality of second thermal reaction films to be used as a plurality of second light sensing areas, and the projections of the plurality of second thermal reaction films on the first surface are arranged with the plurality of first thermal reaction films in a cross way. The electrode films are respectively positioned at two sides of each first thermal reaction film and each second thermal reaction film.
In this embodiment, the double-sided photothermal reaction selective lock further includes a plurality of wires, and the plurality of wires are respectively connected to the plurality of electrode films.
In the present embodiment, the plurality of wires are connected to a thermal detector so that the thermal detector detects the position of the heat source according to the change of the resistance of the plurality of first thermal reaction films or the plurality of second thermal reaction films.
In the present embodiment, at least two wires are connected to a photosensitive detector, so that the photosensitive detector can determine the position of the light source according to the voltage variation.
In this embodiment, the first surface and the second surface of the photoreaction substrate are further respectively provided with an isolation layer.
In the present embodiment, the isolation layer may be an aluminum nitride isolation layer or a silicon nitride isolation layer.
In this embodiment, the photoreactive substrate may be a silicon substrate.
In this embodiment, the plurality of first thermal reaction films and the plurality of second thermal reaction films may be vanadium oxide thermal reaction films.
In this embodiment, the electrode film may be a vanadium metal electrode film.
In addition, the invention also provides a method for manufacturing the double-sided photothermal reaction selective lock, which comprises the following steps: firstly, depositing an isolation layer on a photoreaction substrate; depositing a plurality of first thermal reaction films on the first surface of the photoreaction substrate, wherein the plurality of first thermal reaction films are transversely and mutually parallel arranged, and the plurality of first thermal reaction films are not contacted with each other, so that the photoreaction substrate is exposed among the plurality of first thermal reaction films to form a plurality of first light sensing areas; electrode films are deposited on the first surface of the photoreaction substrate and positioned at two sides of each first thermal reaction film; depositing a plurality of second thermal reaction films on a second surface of the photoreaction substrate, wherein the plurality of second thermal reaction films are longitudinally and mutually parallel arranged, and the plurality of second thermal reaction films are not contacted with each other, so that the photoreaction substrate is exposed among the plurality of second thermal reaction films to form a plurality of second light sensing areas; and finally, electrode films are deposited on the second surface of the photoreaction substrate and positioned at two sides of each second thermal reaction film.
The purpose, technical content, features and effects of the present invention will be more readily understood through the following detailed description of specific embodiments.
Drawings
Fig. 1 is a perspective view of the present invention.
FIG. 2 is a schematic view of a first surface of a photoreaction substrate according to the present invention.
FIG. 3 is a schematic view of a second surface of the photoreaction substrate of the present invention.
FIG. 4 is a flow chart of a manufacturing method of the present invention.
Description of reference numerals: 1-double-sided photothermal reaction selection lock; 10-a photoreaction substrate; 102-a first light sensing region; 104-a second light sensing region; 12-a first side; 14-a second face; 16-an isolation layer; 16' -an isolation layer; 18-a first thermally reactive film; 20-an electrode film; 20' -an electrode film; 22-a second thermally reactive film; 24-a wire; 244-a wire; 242-conductive lines; 26-a thermosensitive detector; 28-photosensitive detector.
Detailed Description
The double-sided photothermal reaction selection lock and the manufacturing method thereof provided by the invention can be applied to the field of touch panels, and the selection lock is a device for a user to select and unlock the function of a use part.
In order to understand the structural design of the present invention, the structural composition of the double-sided photothermal reaction selective latch is described in detail herein, referring to fig. 1, the structure of the double-sided photothermal reaction selective latch 1 includes a photoreactive substrate 10, which can generate corresponding electrical variation according to the variation of light quantity, in this embodiment, the photoreactive substrate 10 is a silicon substrate, the structure of the photoreactive substrate 10 has a first surface 12 and a second surface 14 disposed opposite to each other, in this embodiment, the first surface 12 and the second surface 14 of the photoreactive substrate 10 are deposited with isolation layers 16, 16 ', respectively, wherein the isolation layers 16, 16' can be aluminum nitride isolation layers or silicon nitride isolation layers.
Referring to fig. 1 and fig. 2, a structure disposed on the first surface 12 of the photoreaction substrate is illustrated, wherein a plurality of first thermal reaction films 18 are disposed on the isolation layer 16 deposited on the first surface 12 of the photoreaction substrate 10, and can generate corresponding electrical variation according to the thermal variation, the plurality of first thermal reaction films 18 are disposed transversely and in parallel to each other, that is, the first thermal reaction films 18 are disposed along the x-axis direction of the coordinate, and the plurality of first thermal reaction films 18 are not in contact with each other, so as to expose the photoreaction substrate 10, and the exposed portions serve as a plurality of first photo-sensing regions 102, in this embodiment, the first thermal reaction film 18 is a vanadium oxide thermal reaction film; the first surface 12 of the photoreaction substrate 10 is further provided with a plurality of electrode films 20, the plurality of electrode films 20 are respectively located at two sides of the first thermal reaction film 18 to lead out the electrical change of the positive electrode and the negative electrode of the first thermal reaction film 18, and the electrode films 20 can be vanadium metal electrode films.
After describing the structure of the first surface 12 of the photoreaction substrate 10, please refer to fig. 1 and fig. 3 to describe the structure of the second surface 14 of the photoreaction substrate 10, wherein a plurality of second thermal reaction films 22, which may be vanadium oxide thermal reaction films, are disposed on the isolation layer 16' deposited on the second surface 14 of the photoreaction substrate 10, the plurality of second thermal reaction films 22 are disposed longitudinally and parallel to each other, that is, the second thermal reaction films 22 are disposed along the y-axis direction of the coordinate, so that the projections of the plurality of second thermal reaction films 22 on the first surface 14 are arranged to intersect with the plurality of first thermal reaction films 18, the plurality of second thermal reaction films 22 are not in contact with each other to expose the photoreaction substrate 10, and the exposed portions are used as a plurality of second photo-sensing areas 104; the second surface 14 of the photoreaction substrate 10 is further provided with a plurality of electrode films 20 ', the plurality of electrode films 20 ' are respectively located at two sides of the second thermal reaction film 22 to lead out the electrical change of the positive electrode and the negative electrode of the second thermal reaction film 22, and the electrode film 20 ' can be a vanadium metal electrode film.
As shown in fig. 1 to fig. 3, the positive and negative electrodes of the electrodes 20, 20' on the photoreaction substrate 10 are further electrically connected to a plurality of wires 24, in this embodiment, the electrical change is led out at intervals in a positive and negative manner, and the wires 24 are all electrically connected to a thermal detector 26, the thermal detector 26 can receive electrical signals generated by the first thermal reaction films 18 or the second thermal reaction films 22, so that the thermal detector 26 can detect the position of the heat source according to the change of the resistance of the first thermal reaction films 18 or the second thermal reaction films 22. For example, the thermal detector 26 may be a voltage detector or a current detector, and the thermal detector 26 may determine the position of the first thermal reaction film 18 or the plurality of second thermal reaction films 22 corresponding to the resistance value change by detecting the change of the voltage value or the current value, so as to detect the position having thermal reaction, and to confirm the moving track of the object.
In addition, in the embodiment, besides the wire 24 connected to the thermal detector 26, some wires 24 are further connected to a photosensitive detector 28, and in the embodiment, the wire 242 and the wire 244 are connected to the photosensitive detector 28, so that the photosensitive detector 28 can determine the light source change position according to the voltage change. For example, the light-sensitive detector 28 can be a voltage detection device, and the light-sensitive detector 28 can determine the position of the light source change according to the current detected voltage change to confirm the moving track of the object.
The thermal detector 26 and the photosensitive detector 28 can be further connected to a calculator (not shown) for receiving signals from the thermal detector 26 and the photosensitive detector 28, and optionally using the signals from the thermal detector 26 or the photosensitive detector 28 to determine the moving trajectory of the object.
Next, the steps of the method for fabricating the double-sided photothermal reaction selective locking structure 1 are described, please refer to fig. 1 to 4, and step S10 is first performed to deposit the isolation layer 16 on a photoreaction substrate 10. Next, step S12 is performed to deposit a plurality of first thermal reaction films 18 on the first surface 12 of the photoreaction substrate 10, and the plurality of first thermal reaction films 18 are laterally and parallel to each other, so that the plurality of first thermal reaction films 18 do not contact each other, and the photoreaction substrate 10 is exposed between the plurality of first thermal reaction films 18, and the exposed areas form a plurality of first photosensitive regions 102. Next, in step S14, electrode films 20 are deposited on the first surface 12 of the photoreaction substrate 10 and on both sides of each first thermal reaction film 18 to extract the electrical variation of the positive and negative electrodes of the first thermal reaction film 18.
Next, the process of fabricating the second surface 14 of the photoreaction substrate 10 is performed, as shown in step S16, a plurality of second thermal reaction films 22 are deposited on the second surface 14 of the photoreaction substrate 10, the plurality of second thermal reaction films 22 are disposed longitudinally and parallel to each other, the plurality of second thermal reaction films 22 are not in contact with each other, the photoreaction substrate 10 is exposed between the plurality of second thermal reaction films 22, and the exposed areas form a plurality of second photosensitive regions 104. Then, step S18 is performed to deposit electrode films 20' on the second surface 14 of the photoreaction substrate 10 and on both sides of each second thermal reaction film 22. Finally, in step S20, a plurality of leads 24 are provided to electrically connect the plurality of electrode films 20, 20', respectively, and the leads can be led out with electrical variation at intervals in the form of positive and negative electrodes. The double-sided photothermal reaction selective lock 1 of the present embodiment can be formed by the above-mentioned manufacturing method.
In summary, the invention can avoid the interference of the different axial thermal reaction films on the same substrate when the different axial thermal reaction films are disposed on the same substrate, so as to effectively realize the simultaneous use of thermal induction and light induction, or select the use of only one of the thermal induction and light induction technologies; the invention respectively arranges the non-coaxial thermal reaction films on the two sides of the substrate, can avoid the situation that the signals of the adjacent thermal reaction films are isolated by additionally arranging a high-impedance insulating layer when the non-coaxial thermal reaction films are arranged on the same surface, can avoid the arrangement of the insulating layer, and reduces the complexity of the structure and the cost.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Therefore, all equivalent changes or modifications according to the features and the spirit of the present invention should be included in the protection scope of the present invention.
Claims (15)
1. A double-sided photothermal reaction selection lock, comprising:
a photoreaction substrate having a first surface and a second surface opposite to each other;
a plurality of first thermal reaction films, which are transversely and mutually parallel arranged on the first surface of the photoreaction substrate, are not contacted with each other, and the photoreaction substrate is exposed among the plurality of first thermal reaction films to be used as a plurality of first light sensing areas;
a plurality of second thermal reaction films, which are longitudinally and mutually parallel arranged on the second surface of the photoreaction substrate, wherein the plurality of second thermal reaction films are not contacted with each other, and the photoreaction substrate is exposed among the plurality of second thermal reaction films to be used as a plurality of second light sensing areas; and
and a plurality of electrode films arranged on the first surface and the second surface of the photoreaction substrate and respectively positioned at two sides of each first thermal reaction film and each second thermal reaction film.
2. The dual-sided photothermal reaction selective latch of claim 1, further comprising a plurality of conductive lines electrically connected to the plurality of electrode films, respectively.
3. The dual-sided photothermal reaction selection lock of claim 2, wherein the plurality of wires are further electrically connected to a heat-sensitive detector, such that the heat-sensitive detector detects the position of the heat source according to the change of the resistance of the plurality of first thermally responsive films or the plurality of second thermally responsive films.
4. The dual-sided photothermal reaction selection lock of claim 1, wherein at least two wires are connected to a photosensitive detector, such that the photosensitive detector determines the position of the light source change according to the voltage change.
5. The dual-sided photothermal reaction selective lock of claim 1, wherein the first side and the second side of the photoreactive substrate are further provided with isolation layers respectively, the isolation layers being located between the first thermal reaction films and the photoreactive substrate, and between the second thermal reaction films and the photoreactive substrate.
6. The dual-sided photothermal reaction selective lock of claim 5, wherein the isolation layer is an aluminum nitride isolation layer or a silicon nitride isolation layer.
7. The dual-sided photothermal reaction selective lock of claim 1, wherein the photoreactive substrate is a silicon substrate.
8. The dual-sided photothermal reaction selective lock of claim 1, wherein the plurality of first thermal reaction films and the plurality of second thermal reaction films are vanadium oxide thermal reaction films.
9. The dual-sided photothermal reaction selectivity lock of claim 1, wherein the electrode film is a vanadium metal electrode film.
10. A method for manufacturing a double-sided photothermal reaction selective lock is characterized by comprising the following steps:
depositing an isolation layer on the photoreaction substrate;
depositing a plurality of first thermal reaction films on the first surface of the photoreaction substrate, wherein the plurality of first thermal reaction films are transversely and mutually parallel arranged, the plurality of first thermal reaction films are not mutually contacted, and the photoreaction substrate is exposed among the plurality of first thermal reaction films to form a plurality of first light sensing areas;
depositing electrode films on the first surface of the photoreaction substrate and on two sides of each first thermal reaction film;
depositing a plurality of second thermal reaction films on the second surface of the photoreaction substrate, wherein the plurality of second thermal reaction films are longitudinally and mutually parallel and are not mutually contacted, and the photoreaction substrate is exposed among the plurality of second thermal reaction films to form a plurality of second light sensing areas; and
and depositing the electrode film on the second surface of the photoreaction substrate and on two sides of each second thermal reaction film.
11. The method of claim 10, further comprising the steps of: a plurality of wires are arranged and are respectively and electrically connected with the electrode films.
12. The method of claim 10, wherein the isolation layer is an aluminum nitride isolation layer or a silicon nitride isolation layer.
13. The method of claim 10, wherein the photo-reactive substrate is a silicon substrate.
14. The method of claim 10, wherein the first and second thermal films are vanadium oxide thermal films.
15. The method of claim 10, wherein the electrode film is a vanadium metal electrode film.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010113460.0A CN113296625A (en) | 2020-02-24 | 2020-02-24 | Double-sided photo-thermal reaction selection lock and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010113460.0A CN113296625A (en) | 2020-02-24 | 2020-02-24 | Double-sided photo-thermal reaction selection lock and manufacturing method thereof |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030174424A1 (en) * | 2002-03-15 | 2003-09-18 | Hart Brian T. | Monolithic filter array |
| CN101430629A (en) * | 2007-11-06 | 2009-05-13 | 深圳华为通信技术有限公司 | Touch screen, its trigger equipment and touch screen system |
| CN102331890A (en) * | 2011-10-24 | 2012-01-25 | 苏州佳世达电通有限公司 | Optical touch screen and optical sensing correction method thereof |
| CN106339144A (en) * | 2016-09-09 | 2017-01-18 | 京东方科技集团股份有限公司 | Laser touch panel, display equipment, display system and laser touch method |
| CN106484197A (en) * | 2016-10-21 | 2017-03-08 | 京东方科技集团股份有限公司 | Contact panel and its driving method, driving means |
| CN107392168A (en) * | 2017-07-31 | 2017-11-24 | 京东方科技集团股份有限公司 | A kind of fingerprint recognition structure and preparation method thereof |
-
2020
- 2020-02-24 CN CN202010113460.0A patent/CN113296625A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030174424A1 (en) * | 2002-03-15 | 2003-09-18 | Hart Brian T. | Monolithic filter array |
| CN101430629A (en) * | 2007-11-06 | 2009-05-13 | 深圳华为通信技术有限公司 | Touch screen, its trigger equipment and touch screen system |
| CN102331890A (en) * | 2011-10-24 | 2012-01-25 | 苏州佳世达电通有限公司 | Optical touch screen and optical sensing correction method thereof |
| CN106339144A (en) * | 2016-09-09 | 2017-01-18 | 京东方科技集团股份有限公司 | Laser touch panel, display equipment, display system and laser touch method |
| CN106484197A (en) * | 2016-10-21 | 2017-03-08 | 京东方科技集团股份有限公司 | Contact panel and its driving method, driving means |
| CN107392168A (en) * | 2017-07-31 | 2017-11-24 | 京东方科技集团股份有限公司 | A kind of fingerprint recognition structure and preparation method thereof |
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