CN113285016A - Processing method of quartz wafer - Google Patents
Processing method of quartz wafer Download PDFInfo
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- CN113285016A CN113285016A CN202110551493.8A CN202110551493A CN113285016A CN 113285016 A CN113285016 A CN 113285016A CN 202110551493 A CN202110551493 A CN 202110551493A CN 113285016 A CN113285016 A CN 113285016A
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- solution
- mixed solution
- wafer
- original sheet
- corrosion
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 239000010453 quartz Substances 0.000 title claims abstract description 50
- 238000003672 processing method Methods 0.000 title claims abstract description 12
- 239000011259 mixed solution Substances 0.000 claims abstract description 53
- 239000000243 solution Substances 0.000 claims abstract description 48
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 45
- 238000005260 corrosion Methods 0.000 claims abstract description 32
- 230000007797 corrosion Effects 0.000 claims abstract description 32
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000012670 alkaline solution Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 25
- 238000004140 cleaning Methods 0.000 claims abstract description 8
- 238000001035 drying Methods 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 17
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 11
- 239000000843 powder Substances 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 5
- 238000005342 ion exchange Methods 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims 1
- 238000003486 chemical etching Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 15
- 230000003746 surface roughness Effects 0.000 abstract description 9
- 150000002500 ions Chemical class 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000006386 neutralization reaction Methods 0.000 abstract description 3
- 238000010923 batch production Methods 0.000 abstract description 2
- 239000002994 raw material Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 3
- 238000004439 roughness measurement Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/09—Forming piezoelectric or electrostrictive materials
- H10N30/093—Forming inorganic materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
Abstract
The invention provides a processing method of a quartz wafer, which comprises the following steps: preparing a mixed solution, wherein the mixed solution consists of an ammonium bifluoride solution and an alkaline solution, and the concentration of the alkaline solution accounts for 5-20%; carrying out surface corrosion treatment, namely placing an original sheet in the mixed solution, and carrying out chemical corrosion on the surface of the original sheet; and cleaning and drying, namely cleaning the mixed solution remained on the surface of the original wafer in time, and drying to obtain the thinned quartz wafer. The invention adds sodium hydroxide solution or other alkaline solution into saturated ammonium bifluoride solution, and the ammonium bifluoride solution and the alkaline solution can generate acid-base neutralization reaction when mixed to ensure that H in the mixed solution+The ion concentration is reduced, thereby reducing the difference of the corrosion rate of the corrosion solution on different crystal faces of the quartz wafer and realizing the effect of improving the surface roughness of the quartz wafer, and the scheme is addedThe raw materials are easy to obtain, the cost is low, the process is simple, and the method is suitable for batch production.
Description
Technical Field
The invention belongs to the technical field of piezoelectric quartz wafer production, and relates to a quartz wafer processing method.
Background
With the development of the 5G market, more and more electronic technology fields need quartz crystals with higher frequency, and the impedance and temperature characteristics of the quartz crystals are required to be better.
The higher the frequency of the quartz crystal is, the thinner the required quartz crystal is, and when the thickness of the quartz crystal is smaller than a certain value, the processing difficulty of the traditional mechanical grinding process is higher, the yield of the processing process is lower, and even the quartz crystal cannot be processed; when the quartz wafer is etched to a certain thickness, due to the characteristic of anisotropy, the etching rates of the ammonium bifluoride or hydrofluoric acid solution at different positions of the lattice structure on the surface of the quartz wafer are different, so that the surface roughness of the etched quartz wafer is large and the required roughness is difficult to achieve. In the traditional method, photoetching, dry etching or high-cost wet etching equipment is also used for realizing the reduction of the thickness of the quartz wafer, but the equipment cost required by the methods is higher and the relative processing cost is higher.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the invention provides a processing method of a quartz wafer, which is used for solving the technical problem that the surface roughness of the quartz wafer is larger due to the adoption of a corrosion process in the existing processing method.
In order to solve the technical problems, the invention adopts the technical scheme that:
the invention provides a processing method of a quartz wafer, which comprises the following steps:
preparing a mixed solution, wherein the mixed solution consists of an ammonium bifluoride solution and an alkaline solution, and the alkaline solution accounts for 5-20% of the mixed solution;
carrying out surface corrosion treatment, namely placing an original sheet in the mixed solution, and carrying out chemical corrosion on the surface of the original sheet;
and cleaning and drying, namely cleaning the mixed solution remained on the surface of the original wafer in time, and drying to obtain the thinned quartz wafer.
Preferably, the ammonium bifluoride solution is a saturated ammonium bifluoride solution or an unsaturated ammonium bifluoride solution.
Preferably, the alkaline solution is one of a sodium hydroxide solution or a potassium hydroxide solution, and the sodium hydroxide solution or the potassium hydroxide solution is prepared from sodium hydroxide powder or potassium hydroxide powder.
Preferably, the concentration of the alkaline solution is 50% to 80%.
Preferably, the surface corrosion treatment further comprises placing the original sheet on a grinder for fine grinding treatment.
Preferably, the original wafer is one of a quartz wafer or a quartz square wafer.
Preferably, the placing the original sheet into the mixed solution, and the chemically etching the surface of the original sheet includes:
and placing the original sheet in a corrosion basket or a corrosion net, completely immersing the original sheet in the mixed solution for corrosion reaction, controlling the temperature of the mixed solution to be not more than 60 ℃, and taking out the original sheet after the original sheet is immersed for a preset time.
Preferably, the completely immersing the original piece into the mixed solution for the corrosion reaction further comprises:
and controlling the original sheet to swing in the mixed solution so as to accelerate the ion exchange rate of the surface of the original sheet.
Preferably, the completely immersing the original piece into the mixed solution for the corrosion reaction further comprises:
and controlling the flow of the mixed solution to accelerate the ion exchange rate of the surface of the original sheet.
Preferably, protective articles are worn in the process of chemically corroding the surface of the original sheet, and the protective articles comprise protective gloves and protective glasses.
Compared with the prior art, the invention has the beneficial effects that: the invention adds sodium hydroxide solution or other alkaline solution into saturated ammonium bifluoride solution, and the ammonium bifluoride solution and the alkaline solution can generate acid-base neutralization reaction when mixed to ensure that H in the mixed solution+The ion concentration is reduced, so that the difference of the etching rate of the etching solution on different crystal faces of the quartz wafer is reduced, and the effect of improving the surface roughness of the quartz wafer is realized. The added raw materials are easy to obtain, the cost is low, the process is simple, and the method is suitable for batch production.
Drawings
The detailed structure of the invention is described in detail below with reference to the accompanying drawings
FIG. 1 is a flow chart of a quartz wafer processing method provided by the present invention;
FIG. 2 is a schematic diagram of the surface roughness measurement of a quartz wafer prepared by using the mixed solution of the present invention;
FIG. 3 is a schematic diagram of the surface roughness measurement of a quartz wafer prepared directly from an ammonium bifluoride solution.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
The main component of the quartz wafer is SiO2And the crystal lattice structure and the physical and chemical properties are specific, so that the crystal lattice structure can be corroded by a fluorine-containing acidic solution and a strong alkaline solution, the fixed crystal lattice structure shows obvious anisotropy in the reaction process, and when a quartz wafer is corroded by the traditional ammonium bifluoride solution, different corrosion rates on different crystal faces of the surface are different, so that bulges are formed, and the roughness is increased.
Formation thereofThe reason is that Si atoms on the surface of the cut crystal have dangling bonds which can adsorb H in the solution+The reaction rate is accelerated because the number of dangling bonds on different crystal faces of the quartz wafer is different, so that the reaction rate is different. FIG. 3 is a schematic diagram showing the surface roughness Ra of a quartz wafer prepared by directly using ammonium bifluoride solution, wherein the roughness Ra value is 113.7nm, and the roughness is relatively large.
Therefore, the invention provides a processing method for etching the surface of a quartz wafer by using a mixed solution.
Referring to the flow chart of the quartz wafer processing method shown in fig. 1, the present invention provides a quartz wafer processing method, which includes:
By adding alkaline solution into the ammonium bifluoride solution, the ammonium bifluoride solution and the alkaline solution are mixed to generate acid-base neutralization reaction, so that H in the mixed solution+The ion concentration decreases.
Wherein the ammonium bifluoride solution is an ammonium bifluoride saturated solution or an ammonium bifluoride unsaturated solution; the alkaline solution is a strong alkaline solution, such as a sodium hydroxide solution or a potassium hydroxide solution or other alkaline solutions, and the sodium hydroxide solution or the potassium hydroxide solution with the concentration of 50-80% is prepared from sodium hydroxide powder or potassium hydroxide powder at normal temperature.
And 20, performing surface corrosion treatment, namely placing the original sheet in the mixed solution, and performing chemical corrosion on the surface of the original sheet.
The original sheet is one of quartz wafer or quartz square sheet, and is mixed with H in the solution+The ion concentration is reduced, so that the difference of the etching rate of the etching solution on different crystal faces of the quartz wafer is reduced, and the effect of improving the surface roughness of the quartz wafer is realized.
Preferably, the method further comprises placing the original sheet on a grinder to perform fine grinding treatment before the surface etching treatment, and the thickness of the wafer is preset by the original sheet after grinding treatment.
In a specific corrosion treatment process, the original sheet can be placed in a corrosion basket or a corrosion net, so that the original sheet is completely immersed in the mixed solution for corrosion reaction, and further, the ion exchange rate of the surface of the original sheet, namely the corrosion rate, can be accelerated by controlling the original sheet to swing in the mixed solution or controlling the flow of the mixed solution in the process of corrosion reaction.
It should be noted that, the temperature of the mixed solution needs to be controlled not more than 60 ℃ in the corrosion reaction process, and a corresponding solution corrosion device can be adopted, so that the functions of adding and heating the mixed solution, controlling the flow rate of the mixed solution and the like can be realized. Furthermore, a user sets the corrosion time according to the thickness to be corroded, and takes out the corroded quartz wafer after the original wafer is soaked for a preset time, wherein the maximum corrosion thickness of the quartz wafer can reach 15 um; protective articles are required to be worn in the chemical corrosion process, and personal safety protection is well done, such as protective gloves and protective glasses.
And step 30, cleaning and drying, cleaning the mixed solution remained on the surface of the original wafer in time, and drying to obtain the thinned quartz wafer.
FIG. 2 is a schematic view showing the surface roughness measurement of a quartz wafer prepared by the above steps of the present invention; the roughness Ra value is 10nm, compared with the traditional quartz wafer which is etched by only adopting ammonium bifluoride solution, the roughness value is less than one tenth of the original roughness value, and the roughness is greatly improved.
The following are specific examples of the ratio of the mixed solution:
example 1
Preparing a mixed solution, wherein the mixed solution consists of an ammonium bifluoride solution and an alkaline solution, the alkaline solution accounts for 5% of the mixed solution, the ammonium bifluoride solution accounts for 95%, the alkaline solution is preferably a sodium hydroxide solution, and the concentration of the sodium hydroxide solution is 50%.
Example 2
Preparing a mixed solution, wherein the mixed solution consists of an ammonium bifluoride solution and an alkaline solution, the alkaline solution accounts for 15% of the mixed solution, the ammonium bifluoride solution accounts for 85%, the alkaline solution is preferably a potassium hydroxide solution, and the concentration of the potassium hydroxide solution is 65%.
Example 3
Preparing a mixed solution, wherein the mixed solution consists of an ammonium bifluoride solution and an alkaline solution, the alkaline solution accounts for 20% of the mixed solution, the ammonium bifluoride solution accounts for 80%, the alkaline solution is preferably a sodium hydroxide solution, and the concentration of the sodium hydroxide solution is 80%.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes performed by the present specification and drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. A processing method of a quartz wafer is characterized by comprising the following steps:
preparing a mixed solution, wherein the mixed solution consists of an ammonium bifluoride solution and an alkaline solution, and the alkaline solution accounts for 5-20% of the mixed solution;
carrying out surface corrosion treatment, namely placing an original sheet in the mixed solution, and carrying out chemical corrosion on the surface of the original sheet;
and cleaning and drying, namely cleaning the mixed solution remained on the surface of the original wafer in time, and drying to obtain the thinned quartz wafer.
2. The method of processing a quartz wafer of claim 1, wherein the ammonium bifluoride solution is a saturated ammonium bifluoride solution or an unsaturated ammonium bifluoride solution.
3. The method as set forth in claim 1 wherein the alkaline solution is one of a sodium hydroxide solution or a potassium hydroxide solution, and the sodium hydroxide solution or the potassium hydroxide solution is prepared from sodium hydroxide powder or potassium hydroxide powder.
4. The method of claim 3, wherein the concentration of the alkali solution is 50% to 80%.
5. The method of claim 1, wherein the surface etching treatment further comprises a fine grinding treatment of the wafer by placing the wafer on a grinder.
6. The method of claim 1, wherein the wafer is one of a quartz wafer and a quartz square.
7. The method as claimed in claim 6, wherein the step of placing the wafer in the mixed solution and the step of chemically etching the wafer surface comprises:
and placing the original sheet in a corrosion basket or a corrosion net, completely immersing the original sheet in the mixed solution for corrosion reaction, controlling the temperature of the mixed solution to be not more than 60 ℃, and taking out the original sheet after the original sheet is immersed for a preset time.
8. The method of claim 7, wherein the fully immersing the wafer in the mixed solution for the etching reaction further comprises:
and controlling the original sheet to swing in the mixed solution so as to accelerate the ion exchange rate of the surface of the original sheet.
9. The method of claim 7, wherein the fully immersing the wafer in the mixed solution for the etching reaction further comprises:
and controlling the flow of the mixed solution to accelerate the ion exchange rate of the surface of the original sheet.
10. The method as claimed in claim 1, wherein protective articles are worn during the chemical etching process on the surface of the wafer, wherein the protective articles include protective gloves and protective glasses.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110551493.8A CN113285016A (en) | 2021-05-20 | 2021-05-20 | Processing method of quartz wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110551493.8A CN113285016A (en) | 2021-05-20 | 2021-05-20 | Processing method of quartz wafer |
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| CN113285016A true CN113285016A (en) | 2021-08-20 |
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| CN202110551493.8A Pending CN113285016A (en) | 2021-05-20 | 2021-05-20 | Processing method of quartz wafer |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5397430A (en) * | 1991-07-19 | 1995-03-14 | Compagnie D'electronique Et De Peizo-Electricite Cepe | Controlled dissolution of quartz |
| CN105141271A (en) * | 2015-09-25 | 2015-12-09 | 江苏海峰电子有限公司 | Processing method for manufacturing crystal base plate of quartz-crystal resonator |
-
2021
- 2021-05-20 CN CN202110551493.8A patent/CN113285016A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5397430A (en) * | 1991-07-19 | 1995-03-14 | Compagnie D'electronique Et De Peizo-Electricite Cepe | Controlled dissolution of quartz |
| CN105141271A (en) * | 2015-09-25 | 2015-12-09 | 江苏海峰电子有限公司 | Processing method for manufacturing crystal base plate of quartz-crystal resonator |
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Application publication date: 20210820 |
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