CN113284801B - Preparation method of gallium nitride-based high electron mobility transistor epitaxial wafer - Google Patents
Preparation method of gallium nitride-based high electron mobility transistor epitaxial wafer Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 30
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 230000006911 nucleation Effects 0.000 claims abstract description 91
- 238000010899 nucleation Methods 0.000 claims abstract description 91
- 238000000034 method Methods 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 30
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 20
- 230000007797 corrosion Effects 0.000 claims abstract description 18
- 238000005260 corrosion Methods 0.000 claims abstract description 18
- 230000004888 barrier function Effects 0.000 claims abstract description 16
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 21
- 238000001035 drying Methods 0.000 claims description 18
- 239000003513 alkali Substances 0.000 claims description 14
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000012670 alkaline solution Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 16
- 230000007547 defect Effects 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 10
- 239000000969 carrier Substances 0.000 description 6
- 230000010287 polarization Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000000725 suspension Substances 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Abstract
The disclosure provides a preparation method of a gallium nitride-based high electron mobility transistor epitaxial wafer, and belongs to the technical field of semiconductors. The preparation method comprises the following steps: providing a substrate; growing a nucleation layer on a substrate, and performing first high-temperature corrosion treatment on the nucleation layer in the process of growing the nucleation layer; growing a high-resistance buffer layer on the nucleation layer, and sequentially carrying out second high-temperature corrosion treatment and ion beam bombardment treatment on the high-resistance buffer layer in the process of growing the high-resistance buffer layer; and sequentially growing a channel layer and an AlGaN barrier layer on the high-resistance buffer layer. By adopting the preparation method, the stress and defect extension generated by lattice mismatch in the epitaxial layer can be effectively avoided, the crystal quality of the finally formed epitaxial layer is improved, and the electron mobility of the electron mobility transistor is improved.
Description
Technical Field
The disclosure relates to the technical field of semiconductors, in particular to a preparation method of a gallium nitride-based high electron mobility transistor epitaxial wafer.
Background
HEMTs (High Electron Mobility Transistor, high electron mobility transistors) are one type of FET (FieldEffect Transistor ) that uses two materials with different energy gaps to form a heterojunction that provides a channel for carriers. GaN (gallium nitride) base material has the characteristics of wide band gap, high electron mobility, high voltage resistance, radiation resistance, easy formation of heterostructures, large spontaneous polarization effect and the like, and is suitable for preparing semiconductor devices such as HEMT (high electron mobility transistor) and the like.
In the related art, a GaN-based HEMT includes an epitaxial layer, and a source electrode, a drain electrode, and a gate electrode respectively disposed on the epitaxial layer, ohmic contacts are formed between the source electrode and the drain electrode and the epitaxial layer, and schottky contacts are formed between the gate electrode and the epitaxial layer. The epitaxial layer comprises a substrate, a channel layer and a barrier layer which are sequentially laminated on the substrate, and a high-concentration and high-mobility two-dimensional electron gas is formed at the heterojunction interface of the channel layer and the barrier layer.
Sapphire or silicon carbide is adopted as a material of the substrate, gaN is adopted as a material of the channel layer, larger lattice mismatch exists between the substrate and the channel layer, and stress and defects generated by the lattice mismatch extend and accumulate in the epitaxial layer, so that the crystal quality of the epitaxial layer is poor, and the mobility of carriers is influenced.
Disclosure of Invention
The embodiment of the disclosure provides a preparation method of a gallium nitride-based high electron mobility transistor epitaxial wafer, which can effectively avoid stress and defect extension generated by lattice mismatch in an epitaxial layer, improve the crystal quality of a finally formed epitaxial layer and improve the electron mobility of an electron mobility transistor. The technical scheme is as follows:
the embodiment of the disclosure provides a preparation method of a gallium nitride-based high electron mobility transistor epitaxial wafer, which comprises the following steps:
providing a substrate;
growing a nucleation layer on the substrate, and performing first high-temperature corrosion treatment on the nucleation layer in the process of growing the nucleation layer;
growing a high-resistance buffer layer on the nucleation layer, and sequentially carrying out second high-temperature corrosion treatment and ion beam bombardment treatment on the high-resistance buffer layer in the process of growing the high-resistance buffer layer;
and sequentially growing a channel layer and an AlGaN barrier layer on the high-resistance buffer layer.
Optionally, the first high temperature etching treatment is performed on the nucleation layer during the process of growing the nucleation layer, including:
growing a first nucleation layer;
immersing the first nucleation layer in a hot alkali solution for a first set time;
carrying out deionized water spin-drying and drying on the soaked first nucleation layer;
a second nucleation layer is grown on the first nucleation layer.
Optionally, the growing the first nucleation layer comprises:
the temperature of the reaction chamber is controlled to be 600-950 ℃, the pressure is controlled to be 100-300 mbar, the first nucleation layer is grown, and the thickness of the first nucleation layer is 1/3-1/2 of the total thickness of the nucleation layer.
Optionally, the immersing the first nucleation layer in the hot alkali solution for a first set time includes:
the first nucleation layer is soaked in hot alkali solution with the concentration of KOH or NaOH being 20-50% and the temperature being 30-60 ℃ for 15-35 min.
Optionally, the step of spin-drying the soaked first nucleation layer with deionized water includes:
and (3) putting the soaked first nucleation layer into an oven, and drying for 20-60min under the conditions of 50-150 ℃ and vacuum degree of-500 to-720 pa.
Optionally, in the process of growing the high-resistance buffer layer, performing a second high-temperature corrosion treatment and an ion beam bombardment treatment on the high-resistance buffer layer in sequence, including:
growing a first high-resistance buffer layer;
immersing the first high-resistance buffer layer in hot alkali solution for a second set time;
carrying out deionized water spin-drying and drying on the soaked first high-resistance buffer layer;
growing a second high-resistance buffer layer on the first high-resistance buffer layer;
performing ion beam bombardment on the second high-resistance buffer layer;
and growing a third high-resistance buffer layer on the second high-resistance buffer layer.
Optionally, the growing the first high-resistance buffer layer includes:
and controlling the temperature of the reaction chamber to be 1000-1200 ℃ and the pressure to be 100-300 mbar, and growing the first high-resistance buffer layer, wherein the thickness of the first high-resistance buffer layer is 1/2-2/3 of the total thickness of the high-resistance buffer layer.
Optionally, the immersing the first high-resistance buffer layer in the hot alkali solution for a second set time includes:
and immersing the first high-resistance buffer layer in hot alkali solution with the concentration of KOH or NaOH being 20-50% and the temperature being 30-60 ℃ for 15-35 min.
Optionally, the growing the second high-resistance buffer layer on the first high-resistance buffer layer includes:
and controlling the temperature of the reaction chamber to be 1000-1200 ℃, controlling the pressure to be 100-300 mbar, and growing the second high-resistance buffer layer, wherein the thickness of the second high-resistance buffer layer is 100-200 nm.
Optionally, the ion beam bombardment of the second high-resistance buffer layer includes:
ion source mixed by C, ar is adopted, at 10 -7 ～10 -5 And under the vacuum condition of Pa, controlling the ion beam current generated by the ion source to be 20-150 mA, the energy to be 5-30 KeV and the power to be 5-20 kw, and accelerating and focusing the ion beam to enable the ion beam to bombard the second high-resistance buffer layer.
The technical scheme provided by the embodiment of the disclosure has the beneficial effects that:
before a GaN channel layer grows on a substrate, a nucleation layer is formed on the substrate, in the formation process of the nucleation layer, the nucleation layer is subjected to first high-temperature corrosion treatment, a porous structure can be formed on the nucleation layer, the relaxation formed by porous GaN can effectively release the piezoelectric stress formed by an AlGaN high-resistance buffer layer, the crystal quality of a bottom layer is improved, and therefore the channel layer with higher mobility and a two-dimensional electron gas interface can be obtained. Meanwhile, after the nucleation layer is grown, in the process of growing the high-resistance buffer layer, the high-resistance buffer layer is subjected to second high-temperature corrosion treatment, so that multiple holes can be further formed in the high-resistance buffer layer, and due to the existence of the multiple holes, air among the multiple holes is not conductive, a high-resistance film can be formed, the impedance is increased, and the influence of background carriers on a channel is reduced. And then, ion beam bombardment treatment is carried out on the high-resistance buffer layer, so that a uniform suspension bond on the surface is formed, uniformity and consistency of a chemical bonding state are maintained, the stress extending and accumulating in the epitaxial layer is reduced as a whole, defects are reduced, the crystal quality of the epitaxial layer is improved, and the electron mobility of the high-electron mobility transistor is higher.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings required for the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and other drawings may be obtained according to these drawings without inventive effort for a person of ordinary skill in the art.
Fig. 1 is a flowchart of a method for preparing an epitaxial wafer of a gallium nitride-based high electron mobility transistor according to an embodiment of the present disclosure;
fig. 2 is a flowchart of a method for preparing an epitaxial wafer of another gallium nitride-based high electron mobility transistor according to an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of a gallium nitride-based high electron mobility transistor epitaxial wafer according to an embodiment of the present disclosure.
Detailed Description
For the purposes of clarity, technical solutions and advantages of the present disclosure, the following further details the embodiments of the present disclosure with reference to the accompanying drawings.
Fig. 1 is a flowchart of a preparation method of a gallium nitride-based high electron mobility transistor epitaxial wafer according to an embodiment of the present disclosure, where, as shown in fig. 1, the preparation method includes:
Illustratively, the substrate may be a sapphire, si, or SiC substrate.
Wherein the nucleation layer is a GaN layer.
Wherein the high-resistance buffer layer is an AlGaN layer.
And 104, sequentially growing a channel layer and an AlGaN barrier layer on the high-resistance buffer layer.
Wherein the channel layer is a GaN layer. The channel layer is a transport channel of two-dimensional electron gas, and the channel layer is required to be flat in surface and small in doping concentration so as to reduce scattering of the two-dimensional electron gas.
AlGaN barrier layers produce a large amount of positive polarized charges at the interface of the barrier layer and channel layer by the effect of their own large poling or piezoelectric polarization, which can attract electrons, thereby forming a two-dimensional electron gas.
According to the embodiment of the disclosure, before the GaN channel layer grows on the substrate, the nucleation layer is formed on the substrate, in the formation process of the nucleation layer, the first high-temperature corrosion treatment is carried out on the nucleation layer, a porous structure can be formed on the nucleation layer, the relaxation formed by porous GaN can effectively release the piezoelectric stress formed by the AlGaN high-resistance buffer layer, the crystal quality of the bottom layer is improved, and therefore the channel layer with higher mobility and a two-dimensional electron gas interface can be obtained. Meanwhile, after the nucleation layer is grown, in the process of growing the high-resistance buffer layer, the high-resistance buffer layer is subjected to second high-temperature corrosion treatment, so that multiple holes can be further formed in the high-resistance buffer layer, and due to the existence of the multiple holes, air among the multiple holes is not conductive, a high-resistance film can be formed, the impedance is increased, and the influence of background carriers on a channel is reduced. And then, ion beam bombardment treatment is carried out on the high-resistance buffer layer, so that a uniform suspension bond on the surface is formed, uniformity and consistency of a chemical bonding state are maintained, the stress extending and accumulating in the epitaxial layer is reduced as a whole, defects are reduced, the crystal quality of the epitaxial layer is improved, and the electron mobility of the high-electron mobility transistor is higher.
Fig. 2 is a flowchart of another preparation method of a gallium nitride-based high electron mobility transistor epitaxial wafer according to an embodiment of the present disclosure, as shown in fig. 2, where the preparation method includes:
Illustratively, the substrate may be a sapphire, si, or SiC substrate.
In this embodiment, a nucleation layer, a high-resistance buffer layer, a channel layer, and an AlGaN barrier layer may be sequentially grown on a substrate using MOCVD (Metal organic Chemic alVapor Deposition, metal organic chemical vapor deposition method). The temperature and pressure controlled during the growth process are actually the temperature and pressure within the reaction chamber of the MOCVD equipment.
IllustrativelyAdopts high-purity NH 3 Trimethylgallium (TMGa) and triethylgallium (TEGa) are used as the N source, and Trimethylaluminum (TMAL) is used as the aluminum source.
Illustratively, step 401 may further include:
high temperature H of a substrate 2 And (5) chemical annealing treatment.
The annealing treatment mode comprises the following steps: the substrate is processed for 6-10 min under the high temperature in the hydrogen (as carrier gas) atmosphere in the reaction chamber of the MOCVD equipment. Wherein the temperature of the reaction chamber is 1000-1100 ℃, and the pressure of the reaction chamber is controlled at 200-500 torr.
Wherein the nucleation layer is a GaN layer with a thickness of 80-150 nm.
Illustratively, step 202 may include:
and a first step of growing a first nucleation layer.
Optionally, the first step includes:
the temperature of the reaction chamber is controlled to be 600-950 ℃ and the pressure is controlled to be 100-300 mbar, and a first nucleation layer is grown.
Wherein the thickness of the first nucleation layer is 1/3-1/2 of the total thickness of the nucleation layer.
If the thickness of the first nucleation layer is too thin, it is difficult to effectively improve the crystallization behavior of the epitaxial layer, and the effect on the crystal quality is small. If the thickness of the first nucleation layer is too thick, a thicker epitaxial layer is required to be filled, and meanwhile, due to the too large treatment depth, semi-polar surface growth can be introduced, so that the surface morphology of the epitaxial layer can be abnormal.
And secondly, soaking the first nucleation layer in hot alkali solution for a first set time.
Optionally, the second step includes:
the first nucleation layer is soaked in hot alkali solution with the concentration of KOH or NaOH being 20-50% and the temperature being 30-60 ℃ for 15-35 min.
In the embodiment of the disclosure, the first setting time is 15 to 35 minutes.
If the first setting time is too long, the etching depth is too thick, on one hand, thicker epitaxial layers are required to be filled up, and on the other hand, growth of semi-polar surfaces is introduced, so that the surface morphology of the epitaxial layers is abnormal. If the first setting time is too short, the etching depth is shallow, and the crystal quality of the epitaxial layer is difficult to influence.
And thirdly, carrying out deionized water spin-drying and drying on the soaked first nucleation layer.
Optionally, the third step includes:
and (3) putting the soaked first nucleation layer into an oven, and drying for 20-60min under the conditions of 50-150 ℃ and vacuum degree of-500 to-720 pa.
And a fourth step of growing a second nucleation layer on the first nucleation layer.
Optionally, the fourth step includes:
the temperature of the reaction chamber is controlled to be 600-950 ℃ and the pressure is controlled to be 100-300 mbar, and a second nucleation layer is grown.
In the step, a first nucleation layer with a certain thickness is grown first, and then the first nucleation layer is subjected to high-temperature corrosion treatment, so that dislocation and stress extension caused by the difference of lattice constants of a substrate and gallium nitride can be improved, and the crystal quality of the nucleation layer is improved.
And 203, performing in-situ annealing treatment on the nucleation layer.
Illustratively, the nucleation layer is annealed in situ for a period of between 5 minutes and 10 minutes by controlling the temperature of the reaction chamber to between 1000 ℃ and 1200 ℃ and the pressure to between 100 and 300 mbar.
Wherein the high-resistance buffer layer is an AlGaN layer with the thickness of 1-3 um.
Illustratively, step 204 may include:
and a first step of growing a first high-resistance buffer layer.
Optionally, the first step includes:
the temperature of the reaction chamber is controlled to be 1000-1200 ℃, the pressure is controlled to be 100-300 mbar, and a first high-resistance buffer layer is grown.
Wherein the thickness of the first high-resistance buffer layer is 1/2-2/3 of the total thickness of the high-resistance buffer layer.
If the thickness of the first high-resistance buffer layer is too thin, the effect of stress release is difficult to play, and if the thickness of the first high-resistance buffer layer is too thick, the thickness of the high-resistance buffer layer is thinner, the process window is narrower, and stability and repeatability are difficult to maintain.
And secondly, soaking the first high-resistance buffer layer in hot alkali solution for a second set time.
Optionally, the second step includes:
the first high-resistance buffer layer is soaked in hot alkali solution with the concentration of KOH or NaOH being 20-50% and the temperature being 30-60 ℃ for 15-35 min.
In the embodiment of the disclosure, the second setting time is 15 to 35 minutes.
If the second setting time is too long, the etching depth is too large, too many micro defects appear, and the device performance of the light emitting diode is affected. If the second setting time is too short, it is difficult to effectively improve the crystal quality of the high-resistance buffer layer.
And thirdly, carrying out deionized water spin-drying and drying on the soaked first high-resistance buffer layer.
Optionally, the third step includes:
and (3) putting the soaked first high-resistance buffer layer into an oven, and drying for 20-60min under the conditions of 50-150 ℃ and vacuum degree of-500 to-720 pa.
And step four, growing a second high-resistance buffer layer on the first high-resistance buffer layer.
Optionally, the fourth step includes:
the temperature of the reaction chamber is controlled to be 1000-1200 ℃, the pressure is controlled to be 100-300 mbar, and a second high-resistance buffer layer is grown.
Wherein the thickness of the second high-resistance buffer layer is 100-200 nm. If the thickness of the second high-resistance buffer layer is too thin, it is difficult to effectively fill up the surface difference formed by the treatment layer, and if the thickness of the second high-resistance buffer layer is too thick, the process window is narrowed, so that stability and repeatability are difficult to ensure.
And fifthly, performing ion beam bombardment on the second high-resistance buffer layer.
In the embodiment of the disclosure, the ion beam bombardment is performed on the second high-resistance buffer layer, that is, the ion beam generated by the ion source is accelerated and focused under the vacuum condition, so that the ion beam impinges on the surface of the second high-resistance buffer layer. Among them, the existing ion beam generation method is mainly an accelerator method. The accelerator method is mainly a method of obtaining ions by accelerating particles and making different particles collide, scattering atoms. The energy of the ion beam obtained by the ion source from the accelerator is typically from hundreds of electron volts to tens of thousands of electron volts. Because the ion beam, which is obtained with a high extraction voltage at a relatively high energy, is limited by breakdown, it is necessary to accelerate the ions in an electric and magnetic field, and such devices are called accelerators. The use of various accelerators allows the ions to acquire high energies (e.g., several hundred giga-electron volts) and also allows the ions to be decelerated to acquire a beam of lower energies (e.g., several tens of electron volts) but high current.
Optionally, the fifth step includes:
ion source mixed by C, ar is adopted, at 10 -7 ～10 -5 Under the vacuum condition of Pa, the ion beam current generated by the ion source is controlled to be 20-150 mA, the energy is 5-30 KeV, the power is 5-20 kw, and the ion beam is accelerated and focused, so that the ion beam bombards the second high-resistance buffer layer.
And sixth, growing a third high-resistance buffer layer on the second high-resistance buffer layer.
Optionally, the sixth step includes:
the temperature of the reaction chamber is controlled to be 1000-1200 ℃, the pressure is controlled to be 100-300 mbar, and a third high-resistance buffer layer is grown.
Illustratively, at N 2 、H 2 Introducing TMGa as a III group source and NH under the conditions that the atmosphere and the temperature are 900-1100 ℃ and the pressure of a reaction chamber are 100-200 mbar 3 As a V group source, a GaN channel layer having a thickness of 15 to 100nm is grown.
Illustratively, in pure H 2 Introducing TMGa and TMAl as III source and NH under the conditions of atmosphere, temperature of 950-1200 deg.C and reaction chamber pressure of 100-200 mbar 3 As a means ofAnd V group source, growing AlGaN barrier layer with thickness of 5-20 nm.
Wherein the Al mole doping amount in the AlGaN barrier layer is 0.25-0.35.
According to the embodiment of the disclosure, before the GaN channel layer grows on the substrate, the nucleation layer is formed on the substrate, in the formation process of the nucleation layer, the first high-temperature corrosion treatment is carried out on the nucleation layer, a porous structure can be formed on the nucleation layer, the relaxation formed by porous GaN can effectively release the piezoelectric stress formed by the AlGaN high-resistance buffer layer, the crystal quality of the bottom layer is improved, and therefore the channel layer with higher mobility and a two-dimensional electron gas interface can be obtained. Meanwhile, after the nucleation layer is grown, in the process of growing the high-resistance buffer layer, the high-resistance buffer layer is subjected to second high-temperature corrosion treatment, so that multiple holes can be further formed in the high-resistance buffer layer, and due to the existence of the multiple holes, air among the multiple holes is not conductive, a high-resistance film can be formed, the impedance is increased, and the influence of background carriers on a channel is reduced. And then, ion beam bombardment treatment is carried out on the high-resistance buffer layer, so that a uniform suspension bond on the surface is formed, uniformity and consistency of a chemical bonding state are maintained, the stress extending and accumulating in the epitaxial layer is reduced as a whole, defects are reduced, the crystal quality of the epitaxial layer is improved, and the electron mobility of the high-electron mobility transistor is higher.
Fig. 3 is a schematic structural diagram of a gan-based hemt epitaxial wafer according to an embodiment of the present disclosure, and as shown in fig. 3, the gan-based hemt epitaxial wafer includes a substrate 1, and a nucleation layer 2, a high-resistance buffer layer 3, a channel layer 4, and an AlGaN barrier layer 5 stacked on the substrate 1.
Optionally, the nucleation layer 2 is a GaN layer with a thickness of 80-150 nm.
Optionally, the high-resistance buffer layer 3 is an AlGaN layer with a thickness of 1-3 um. The high-resistance buffer layer 3 can realize the beneficial effect of dislocation filtration and improve the crystal quality of the epitaxial wafer.
Alternatively, the channel layer 4 is a GaN layer with a thickness of 50 to 300nm.
The channel layer 4 is a transport channel for two-dimensional electron gas, and is required to be flat in surface and small in doping concentration so as to reduce scattering of the two-dimensional electron gas.
Alternatively, the thickness of the AlGaN barrier layer 5 is 30 to 100nm.
The AlGaN barrier layer 5 generates a large amount of positive polarization charges at the interface of the barrier layer 5 and the channel layer 4 by the effect of the white light polarization or the piezoelectric polarization which is large in itself, and the positive polarization charges can attract electrons, thereby forming a two-dimensional electron gas.
According to the embodiment of the disclosure, before the GaN channel layer grows on the substrate, the nucleation layer is formed on the substrate, in the formation process of the nucleation layer, the first high-temperature corrosion treatment is carried out on the nucleation layer, a porous structure can be formed on the nucleation layer, the relaxation formed by porous GaN can effectively release the piezoelectric stress formed by the AlGaN high-resistance buffer layer, the crystal quality of the bottom layer is improved, and therefore the channel layer with higher mobility and a two-dimensional electron gas interface can be obtained. Meanwhile, after the nucleation layer is grown, in the process of growing the high-resistance buffer layer, the high-resistance buffer layer is subjected to second high-temperature corrosion treatment, so that multiple holes can be further formed in the high-resistance buffer layer, and due to the existence of the multiple holes, air among the multiple holes is not conductive, a high-resistance film can be formed, the impedance is increased, and the influence of background carriers on a channel is reduced. And then, ion beam bombardment treatment is carried out on the high-resistance buffer layer, so that a uniform suspension bond on the surface is formed, uniformity and consistency of a chemical bonding state are maintained, the stress extending and accumulating in the epitaxial layer is reduced as a whole, defects are reduced, the crystal quality of the epitaxial layer is improved, and the electron mobility of the high-electron mobility transistor is higher.
While the present disclosure has been described above by way of example, and not by way of limitation, any person skilled in the art will recognize that many modifications, adaptations, and variations of the present disclosure can be made to the present embodiments without departing from the scope of the present disclosure.
Claims (10)
1. The preparation method of the gallium nitride-based high electron mobility transistor epitaxial wafer is characterized by comprising the following steps of:
providing a substrate;
growing a nucleation layer on the substrate, and performing first high-temperature corrosion treatment on the nucleation layer in the process of growing the nucleation layer;
growing a high-resistance buffer layer on the nucleation layer, and sequentially carrying out second high-temperature corrosion treatment and ion beam bombardment treatment on the high-resistance buffer layer in the process of growing the high-resistance buffer layer, wherein the high-resistance buffer layer is an AlGaN layer;
and sequentially growing a channel layer and an AlGaN barrier layer on the high-resistance buffer layer.
2. The method of claim 1, wherein the first high temperature etching treatment of the nucleation layer during the growth of the nucleation layer comprises:
growing a first nucleation layer;
immersing the first nucleation layer in a hot alkali solution for a first set time;
carrying out deionized water spin-drying and drying on the soaked first nucleation layer;
a second nucleation layer is grown on the first nucleation layer.
3. The method of preparing according to claim 2, wherein said growing the first nucleation layer comprises:
the temperature of the reaction chamber is controlled to be 600-950 ℃, the pressure is controlled to be 100-300 mbar, the first nucleation layer is grown, and the thickness of the first nucleation layer is 1/3-1/2 of the total thickness of the nucleation layer.
4. The method of claim 2, wherein immersing the first nucleation layer in a hot alkaline NaOH solution for a first set time comprises:
the first nucleation layer is soaked in hot alkali solution with the concentration of KOH or NaOH being 20-50% and the temperature being 30-60 ℃ for 15-35 min.
5. The method of claim 2, wherein the step of spin-drying the soaked first nucleation layer with deionized water comprises:
and (3) putting the soaked first nucleation layer into an oven, and drying for 20-60min under the conditions of 50-150 ℃ and vacuum degree of-500 to-720 pa.
6. The method according to any one of claims 1 to 5, wherein the step of sequentially subjecting the high-resistance buffer layer to a second high-temperature etching treatment and an ion beam bombardment treatment during the growth of the high-resistance buffer layer comprises:
growing a first high-resistance buffer layer;
immersing the first high-resistance buffer layer in hot alkali solution for a second set time;
carrying out deionized water spin-drying and drying on the soaked first high-resistance buffer layer;
growing a second high-resistance buffer layer on the first high-resistance buffer layer;
performing ion beam bombardment on the second high-resistance buffer layer;
and growing a third high-resistance buffer layer on the second high-resistance buffer layer.
7. The method of manufacturing of claim 6, wherein growing the first high-resistance buffer layer comprises:
and controlling the temperature of the reaction chamber to be 1000-1200 ℃ and the pressure to be 100-300 mbar, and growing the first high-resistance buffer layer, wherein the thickness of the first high-resistance buffer layer is 1/2-2/3 of the total thickness of the high-resistance buffer layer.
8. The method of claim 6, wherein immersing the first high-resistance buffer layer in a hot alkaline solution for a second set time comprises:
and immersing the first high-resistance buffer layer in hot alkali solution with the concentration of KOH or NaOH being 20-50% and the temperature being 30-60 ℃ for 15-35 min.
9. The method of manufacturing of claim 6, wherein growing the second high-resistance buffer layer on the first high-resistance buffer layer comprises:
and controlling the temperature of the reaction chamber to be 1000-1200 ℃, controlling the pressure to be 100-300 mbar, and growing the second high-resistance buffer layer, wherein the thickness of the second high-resistance buffer layer is 100-200 nm.
10. The method of claim 6, wherein the ion beam bombardment of the second high-resistance buffer layer comprises:
ion source mixed by C, ar is adopted, at 10 -7 ～10 -5 And under the vacuum condition of Pa, controlling the ion beam current generated by the ion source to be 20-150 mA, the energy to be 5-30 KeV and the power to be 5-20 kw, and accelerating and focusing the ion beam to enable the ion beam to bombard the second high-resistance buffer layer.
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