CN113281840A - Semiconductor packaging structure and forming method thereof - Google Patents

Semiconductor packaging structure and forming method thereof Download PDF

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Publication number
CN113281840A
CN113281840A CN202110358183.4A CN202110358183A CN113281840A CN 113281840 A CN113281840 A CN 113281840A CN 202110358183 A CN202110358183 A CN 202110358183A CN 113281840 A CN113281840 A CN 113281840A
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China
Prior art keywords
integrated circuit
optical integrated
recess
semiconductor package
protrusion
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CN202110358183.4A
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CN113281840B (en
Inventor
林岳儒
洪志成
费筠芷
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Advanced Semiconductor Engineering Inc
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Advanced Semiconductor Engineering Inc
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004Combinations of two or more optical elements
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13Integrated optical circuits characterised by the manufacturing method
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/26Optical coupling means
    • G02B6/32Optical coupling means having lens focusing means positioned between opposed fibre ends

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

The invention discloses a semiconductor packaging structure and a forming method thereof. The semiconductor package structure includes: an optical integrated circuit; the optical fiber array unit is transversely arranged at intervals with the optical integrated circuit; a connection structure spanning between the optical integrated circuit and the optical fiber array unit; and a glue disposed between the optical integrated circuit and the connection structure; wherein at least one of the opposite surfaces of the optical integrated circuit and the connection structure is provided with a recess, and the colloid is filled in the recess so that the distance between the optical integrated circuit and the connection structure is less than 5 micrometers.

Description

Semiconductor packaging structure and forming method thereof
Technical Field
The invention relates to the technical field of semiconductors, in particular to a semiconductor packaging structure and a forming method thereof.
Background
In current silicon photonics (silicon photonics) products, because a Fiber Array Unit (FAU) and a Photonic Integrated Circuit (PIC) must be bonded in a six-axis alignment manner, a connection structure (shield) is designed to be bonded on a chip and connected to the FAU to increase the alignment speed and reduce the cost of the FAU attachment process. Thus, for precise optical alignment, bonding and transmission, the X, Y axis accuracy must be controlled to within 6-8 microns, for example, and the Z axis accuracy must be less than 5 microns, for example; since the currently used bonding technology and machine tool use force to control the bonding mechanism, rather than height, and the used glue material contains filler (filler) components larger than 5 microns, it is difficult to control the thickness of the bonded glue material within 5 microns, and a new solution is needed to accomplish the above challenges and limitations in order to make the FAU and Lens (Lens) bond smoothly and the glue material is less likely to overflow the boundary of the chip (no Lens out).
Disclosure of Invention
In view of the above problems in the related art, the present invention provides a semiconductor package structure and a method for forming the same, so that the thickness of the glue material can be smaller than 5 μm, and the problem of the glue material overflowing the chip boundary can be avoided.
The technical scheme of the invention is realized as follows:
according to an aspect of the present invention, there is provided a semiconductor package structure including: an optical integrated circuit; the optical fiber array unit is transversely arranged at intervals with the optical integrated circuit; a connection structure spanning between the optical integrated circuit and the optical fiber array unit; and the colloid is arranged between the optical integrated circuit and the connecting structure. Wherein at least one of the opposite surfaces of the optical integrated circuit and the connection structure is provided with a recess, and the colloid is filled in the recess so that the distance between the optical integrated circuit and the connection structure is less than 5 micrometers.
In some embodiments, the recess is a rectangular recessed region.
In some embodiments, the recess is an elongated extending groove, wherein the groove has two first limbs each extending in a first direction and a second limb extending in a second direction perpendicular to the first direction and connecting one end of each first limb.
In some embodiments, the glue does not extend beyond the sidewalls of the photonic integrated circuit.
In some embodiments, the semiconductor package structure further comprises a lens laterally positioned between the optical integrated circuit and the optical fiber array unit, and the connection structure spans the lens. The connecting structure has a further recess for accommodating the lens and arranged spaced apart from the recess.
According to another aspect of the present invention, there is provided a semiconductor package structure including: an optical integrated circuit; the optical fiber array unit is transversely arranged at intervals with the optical integrated circuit; a connection structure spanning between the optical integrated circuit and the optical fiber array unit; and the colloid is arranged between the optical integrated circuit and the connecting structure. The upper surface of the optical integrated circuit opposite to the connecting structure is provided with a protruding part surrounding the colloid.
In some embodiments, the protrusion is a protrusion disposed around an edge of the optical integrated circuit.
In some embodiments, the protrusion is a metallic material.
In some embodiments, the protrusion is a dielectric material.
According to still another aspect of the present invention, there is provided a method of forming a semiconductor package structure, including: providing an optical integrated circuit; disposing the colloid on the optical integrated circuit; the connecting structure is pressed on the colloid by a thermal compression bonding (TC bonding) device, so that the distance between the optical integrated circuit and the connecting structure is less than 5 microns.
In some embodiments, the colloid has a filler therein, the filler having a size of less than 5 microns.
In some embodiments, the glue is an adhesive that is disposed by dispensing (dispensing).
In some embodiments, the colloid is an epoxy resin (epoxy) disposed by way of coating (inking). The epoxy resin is cured by ultraviolet light simultaneously during the coating.
In some embodiments, at least one of the opposing surfaces of the optical integrated circuit and the connection structure is provided with a recess. In some embodiments, the recess is a rectangular recessed region. In some embodiments, the recess is an elongated extending groove, wherein the groove has two first limbs each extending in a first direction and a second limb extending in a second direction perpendicular to the first direction and connecting one end of each first limb.
In some embodiments, the surface of the optical integrated circuit opposite to the connecting structure is provided with a protrusion surrounding the glue, wherein the glue is arranged in a middle area of an edge of the protrusion far away from the optical integrated circuit.
In some embodiments, the protrusion is a protrusion disposed around an edge of the optical integrated circuit, and the protrusion is a metal material or a dielectric material.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic diagram of a semiconductor package structure according to an embodiment of the invention.
Fig. 2 is a flow chart of a method of forming a semiconductor package structure according to an embodiment of the present invention.
Fig. 3A-3C are schematic diagrams of stages in forming a semiconductor package structure according to an embodiment of the invention.
Fig. 4A-4C are schematic diagrams of stages in forming a semiconductor package structure according to another embodiment of the invention.
Fig. 5A and 5B are schematic structural diagrams of an optical integrated circuit according to an embodiment of the present invention.
Fig. 6A and 6B are schematic structural views of a connection structure according to an embodiment of the present invention.
Fig. 7 is a schematic structural diagram of an optical integrated circuit according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments that can be derived by one of ordinary skill in the art from the embodiments given herein are intended to be within the scope of the present invention.
To facilitate understanding of the present invention, a semiconductor package structure according to an embodiment of the present invention of fig. 1 will be described first. As shown in fig. 1, a Fiber Array Unit (FAU)130 is laterally spaced from the optical integrated circuit 120. The connection structure 110 spans between the optical integrated circuit 120 and the FAU 130. The adhesive 125 is disposed between the optical integrated circuit 120 and the connection structure 110 to bond the optical integrated circuit 120 and the connection structure 110. The lens 140 is laterally positioned between the optical integrated circuit 120 and the optical fiber array unit 130, and the connection structure 110 spans the lens 140.
Fig. 2 is a flow chart of a method of forming a semiconductor package structure according to an embodiment of the present invention. In a method of forming a semiconductor package structure, at step S202, an optical integrated circuit is provided. At step S204, a glue is disposed on the optical integrated circuit. Then, in step S206, the connection structure is pressed on the molding compound by a thermal compression bonding (TC bonding) apparatus, so that the distance between the optical integrated circuit and the connection structure is less than 5 μm.
The method for forming the semiconductor packaging structure utilizes the hot-press bonding equipment to replace the existing chip bonding equipment, and the height of the hot-press bonding equipment is accurately controlled by the down pressure, so that the precision and the height of the connecting structure can be accurately controlled, the speed of FAU six-axis alignment is greatly accelerated, the manufacturing cost is effectively reduced, and the yield and the competitiveness of products are improved.
Fig. 3A-3C are schematic diagrams of stages in forming a semiconductor package structure according to an embodiment of the invention. As shown in fig. 3A, the optical integrated circuit 120 is provided, and the glue 125 is sprayed on the optical integrated circuit 120 by a dispenser (dispensing machine)312 (steps S202 and S204 in fig. 2). In this embodiment, the colloid 125 may be a non-conductive adhesive. The colloid 125 may have fillers therein that are less than 5 microns in size.
Then, as shown in fig. 3B, the connection structure 110 is placed over the optical integrated circuit 120, and pressure and heat are applied to the surface of the connection structure 110 using the thermal compression bonding apparatus 316 (step S206 in fig. 2) to cure the gel 125 and control the height thereof. In fig. 3C, the bonding of the optical integrated circuit 120 and the connection structure 110 is completed, the distance between the optical integrated circuit 120 and the connection structure 110 (i.e., the thickness of the gel 125) can be less than 5 μm, and the gel 125 does not overflow the sidewalls of the optical integrated circuit 120.
Fig. 4A-4C are schematic diagrams of stages in forming a semiconductor package structure according to another embodiment of the invention. As shown in fig. 4A, the optical integrated circuit 120 is provided, and the colloid 125 is sprayed (inkjetting) on the optical integrated circuit 120 by the spraying device 314 (steps S202 and S204 in fig. 2). In this embodiment, epoxy (epoxy) may be used as the colloid 125. While the epoxy resin is coated, the epoxy resin is first-stage cured (not completely cured) using Ultraviolet (UV) light 315.
Then, as shown in fig. 4B, the connection structure 110 is placed over the optical integrated circuit 120, and pressure and heat are applied on the surface of the connection structure 110 using the thermal compression bonding apparatus 316 (step S206 in fig. 2) to cure the epoxy resin again and control the height thereof. In fig. 4C, the bonding of the optical integrated circuit 120 and the connection structure 110 is completed, the distance between the optical integrated circuit 120 and the connection structure 110 (i.e., the thickness of the gel 125) can be less than 5 μm, and the gel 125 does not overflow the sidewalls of the optical integrated circuit 120.
Furthermore, in some embodiments, as shown in fig. 5A and 5B, the upper surface of the optical integrated circuit 120 (fig. 1) opposite to the connection structure 110 (fig. 1) may have a recess 510 thereon. In some embodiments, the recess 510 may be formed by plasma etching. In fig. 5A, the recess 510 is a rectangular recessed region. In fig. 5B, the recess 510 is an elongated extending groove. Specifically, the groove has two first branches 511 and second branches 512, each first branch 511 extends in a first direction (lateral direction), the second branch 512 extends in a second direction perpendicular to the first direction, and the second branch 512 connects one end of each first branch 511. The other end of the first branch 511 is adjacent to the sidewall of the optical integrated circuit 120 under the connection structure 110 (fig. 1). The recesses 510 in fig. 5A and 5B are merely exemplary, and in other embodiments, the recesses 510 may take any other suitable shape configuration.
In some embodiments, a lower surface of the connection structure 110 (fig. 1) opposite to the optical integrated circuit 120 (fig. 1) may have a recess 610, as shown in fig. 6A and 6B. The connecting structure 110 also has a further recess 620 for accommodating the lens 140 (fig. 1), the further recess 620 being arranged adjacent to the recess 610 at a distance. In some embodiments, the recess 610 may be formed by plasma etching. In fig. 6A, the recess 610 is a rectangular recessed region. In fig. 6B, the recess 610 is an elongated extending groove. Specifically, the groove has two first branches 611 and a second branch 612, each first branch 611 extends in a first direction (lateral direction), the second branch 612 extends in a second direction perpendicular to the first direction, and the second branch 612 connects one end of each first branch 611. The second leg 612 is disposed adjacent to another recess 620. The recesses 610 in fig. 6A and 6B are merely exemplary, and in other embodiments, the recesses 610 may take any other suitable shape configuration.
By forming the recess 510 on the optical integrated circuit 120 or forming the recess 610 on the connection structure 110, the excess glue 125 can be filled into the recess to prevent the glue 125 from overflowing from the sidewall of the optical integrated circuit 120.
In some embodiments, as shown in fig. 7, a protrusion 710 may be disposed at an upper surface of the optical integrated circuit 120 (fig. 1) disposed opposite to the connection structure 110 (fig. 1) to surround the gel 125 with the protrusion 710. The protrusion 710 is a protrusion 710 extending around an edge of the optical integrated circuit 120. Specifically, the protrusion 710 has two first branch portions 711 and second branch portions 712, each of the first branch portions 711 extending in a first direction (lateral direction), the second branch portions 712 extending in a second direction perpendicular to the first direction, and the second branch portions 712 connecting one end of each of the first branch portions 711. The second branch 712 is adjacent to the sidewall of the optical integrated circuit 120 under the connection structure 110 (fig. 1).
The protrusion 710 is a metal material or a dielectric material. The gel 125 may be disposed in a middle region of the edge of the protrusion 710 away from the optical integrated circuit 120. Alternatively, a protrusion 710 of similar structure may be provided at the lower surface of the connection structure 110 opposite to the optical integrated circuit 120. In some embodiments, the height of the protrusions 710 may be less than 5 microns. The protrusion 710 of fig. 7 is merely exemplary, and in other embodiments, the protrusion 710 may take any other suitable shape configuration.
By providing the protrusion 710 on one of the opposite surfaces of the optical integrated circuit 120 or the connecting structure 110, the glue is prevented from overflowing the sidewall of the optical integrated circuit.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.

Claims (20)

1. A semiconductor package structure, comprising:
an optical integrated circuit;
the optical fiber array unit is arranged at a transverse interval with the optical integrated circuit;
a connection structure spanning between the optical integrated circuit and the optical fiber array unit; and
the colloid is arranged between the optical integrated circuit and the connecting structure;
wherein a recess is provided on at least one of the opposing surfaces of the optical integrated circuit and the connection structure, and the gel is filled in the recess such that the distance between the optical integrated circuit and the connection structure is less than 5 μm.
2. The semiconductor package structure of claim 1, wherein the recess is a rectangular recessed area.
3. The semiconductor package structure of claim 1, wherein the recess is an elongated groove, wherein the groove has two first branches each extending in a first direction and a second branch extending in a second direction perpendicular to the first direction and connecting one end of each of the first branches.
4. The semiconductor package of claim 1, wherein the encapsulant does not extend beyond sidewalls of the optical integrated circuit.
5. The semiconductor package structure of claim 1, further comprising a lens laterally between the optical integrated circuit and the optical fiber array unit, and wherein the connection structure spans the lens.
6. The semiconductor package structure of claim 5, wherein the connection structure has another recess for receiving the lens and spaced apart from the recess.
7. A semiconductor package structure, comprising:
an optical integrated circuit;
the optical fiber array unit is arranged at a transverse interval with the optical integrated circuit;
a connection structure spanning between the optical integrated circuit and the optical fiber array unit; and
the colloid is arranged between the optical integrated circuit and the connecting structure;
the upper surface of the optical integrated circuit opposite to the connecting structure is provided with a protruding part surrounding the colloid.
8. The semiconductor package structure of claim 7, wherein the protrusion is a protrusion disposed around an edge of the optical integrated circuit.
9. The semiconductor package structure of claim 7, wherein the protrusion is a metal material.
10. The semiconductor package structure of claim 7, wherein the protrusion is a dielectric material.
11. A method of forming a semiconductor package structure, comprising:
providing an optical integrated circuit;
disposing a gel on the optical integrated circuit;
and pressing a connecting structure on the colloid by virtue of a thermal compression bonding (TC bonding) device, so that the distance between the optical integrated circuit and the connecting structure is less than 5 microns.
12. The method of claim 11, wherein the gel has a filler therein, the filler having a size of less than 5 microns.
13. The method according to claim 11, wherein the glue is an adhesive arranged by dispensing (dispensing).
14. The method according to claim 11, characterized in that said colloid is an epoxy resin (epoxy) provided by means of coating (inking).
15. The method of claim 14, wherein the epoxy is cured by ultraviolet light simultaneously with the coating.
16. The method of claim 11, wherein at least one of the opposing surfaces of the optical integrated circuit and the connecting structure is provided with a recess.
17. The method of claim 16, wherein the recess is a rectangular recessed area.
18. The method of claim 16, wherein the recess is an elongated extending groove, wherein the groove has two first branches each extending in a first direction and a second branch extending in a second direction perpendicular to the first direction and connecting one end of each of the first branches.
19. The method of claim 11, wherein a surface of the optical integrated circuit opposite to the connection structure is provided with a protrusion surrounding the gel, wherein the gel is disposed in a middle region of an edge of the protrusion away from the optical integrated circuit.
20. The method of claim 11, wherein the protrusion is a protrusion disposed around an edge of the optical integrated circuit, and wherein the protrusion is a metal material or a dielectric material.
CN202110358183.4A 2021-04-01 2021-04-01 Semiconductor packaging structure and forming method thereof Active CN113281840B (en)

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CN113281840B CN113281840B (en) 2023-06-16

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102903691A (en) * 2011-07-29 2013-01-30 台湾积体电路制造股份有限公司 Semiconductor devices, packaging methods and structures
CN103890625A (en) * 2011-08-16 2014-06-25 国际商业机器公司 Lens array optical coupling to photonic chip
US20160231513A1 (en) * 2015-02-11 2016-08-11 Corning Optical Communications LLC Optical coupling assemblies for coupling optical cables to silicon-based laser sources
CN106664139A (en) * 2014-07-11 2017-05-10 阿卡西亚通信有限公司 Multichannel coherent transceiver and related apparatus and methods
CN109791261A (en) * 2016-08-30 2019-05-21 康宁光电通信有限责任公司 For the fiber-to-waveguide optical interface of photonic system and with the coupling device of lens
CN110718593A (en) * 2018-06-27 2020-01-21 台湾积体电路制造股份有限公司 Semiconductor structure and forming method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102903691A (en) * 2011-07-29 2013-01-30 台湾积体电路制造股份有限公司 Semiconductor devices, packaging methods and structures
CN103890625A (en) * 2011-08-16 2014-06-25 国际商业机器公司 Lens array optical coupling to photonic chip
CN106664139A (en) * 2014-07-11 2017-05-10 阿卡西亚通信有限公司 Multichannel coherent transceiver and related apparatus and methods
US20160231513A1 (en) * 2015-02-11 2016-08-11 Corning Optical Communications LLC Optical coupling assemblies for coupling optical cables to silicon-based laser sources
CN109791261A (en) * 2016-08-30 2019-05-21 康宁光电通信有限责任公司 For the fiber-to-waveguide optical interface of photonic system and with the coupling device of lens
CN110718593A (en) * 2018-06-27 2020-01-21 台湾积体电路制造股份有限公司 Semiconductor structure and forming method thereof

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