CN113280667A - Liquid absorption core, temperature-uniforming plate, manufacturing method and electronic equipment - Google Patents

Liquid absorption core, temperature-uniforming plate, manufacturing method and electronic equipment Download PDF

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Publication number
CN113280667A
CN113280667A CN202110518190.6A CN202110518190A CN113280667A CN 113280667 A CN113280667 A CN 113280667A CN 202110518190 A CN202110518190 A CN 202110518190A CN 113280667 A CN113280667 A CN 113280667A
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China
Prior art keywords
temperature
copper
wick
liquid absorption
absorption core
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Granted
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CN202110518190.6A
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Chinese (zh)
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CN113280667B (en
Inventor
朱义为
姜华文
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Guangdong Oppo Mobile Telecommunications Corp Ltd
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Guangdong Oppo Mobile Telecommunications Corp Ltd
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/04—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with tubes having a capillary structure
    • F28D15/046—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with tubes having a capillary structure characterised by the material or the construction of the capillary structure
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/0258—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with means to remove contaminants, e.g. getters
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/0283—Means for filling or sealing heat pipes
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F21/00—Constructions of heat-exchange apparatus characterised by the selection of particular materials
    • F28F21/08—Constructions of heat-exchange apparatus characterised by the selection of particular materials of metal
    • F28F21/081—Heat exchange elements made from metals or metal alloys
    • F28F21/085—Heat exchange elements made from metals or metal alloys from copper or copper alloys
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F9/00—Casings; Header boxes; Auxiliary supports for elements; Auxiliary members within casings
    • F28F9/26—Arrangements for connecting different sections of heat-exchange elements, e.g. of radiators
    • F28F9/262—Arrangements for connecting different sections of heat-exchange elements, e.g. of radiators for radiators
    • F28F9/268—Arrangements for connecting different sections of heat-exchange elements, e.g. of radiators for radiators by permanent joints, e.g. by welding
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28G—CLEANING OF INTERNAL OR EXTERNAL SURFACES OF HEAT-EXCHANGE OR HEAT-TRANSFER CONDUITS, e.g. WATER TUBES OR BOILERS
    • F28G9/00—Cleaning by flushing or washing, e.g. with chemical solvents
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2029—Modifications to facilitate cooling, ventilating, or heating using a liquid coolant with phase change in electronic enclosures
    • H05K7/20336—Heat pipes, e.g. wicks or capillary pumps
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F2245/00—Coatings; Surface treatments
    • F28F2245/02—Coatings; Surface treatments hydrophilic

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The application relates to a liquid absorption core, a temperature equalization plate, a manufacturing method and an electronic device. The liquid absorption core is applied to the temperature equalization plate and is made of copper, and the range of the wetting angle between the surface of the liquid absorption core and working media in the temperature equalization plate is 0-40 degrees. The temperature equalizing plate is applied to electronic equipment and comprises the liquid absorbing core and a working medium; the temperature difference of the cold and hot sections of the temperature equalizing plate is less than or equal to 3.8 ℃. A method of making a vapor chamber comprising the wick, the method comprising: carrying out high-temperature oxidation treatment on the semi-finished product of the liquid absorption core to obtain a copper oxide surface; and carrying out high-temperature reduction treatment on the semi-finished product with the copper oxide surface to obtain the liquid absorption core. The electronic equipment comprises the temperature equalizing plate and a heat source, wherein the temperature equalizing plate is attached to the heat source. Through the mode, the water climbing speed of the copper surface and the saturated water amount of the unit area are improved, and the hydrophilic performance of the copper surface is also improved.

Description

Liquid absorption core, temperature-uniforming plate, manufacturing method and electronic equipment
Technical Field
The application relates to the technical field of temperature equalization plates, in particular to a liquid absorption core, a temperature equalization plate, a manufacturing method and electronic equipment.
Background
The temperature equalizing plate is a device for carrying out high-efficiency heat transfer by utilizing phase change latent heat in the circulation processes of evaporation and condensation of liquid working media. The requirements for the conventional work of the temperature equalizing plate are as follows: Δ Cp ≧ Δ pl + Δ pv, i.e., the driving force provided by the capillary force Δ Cp needs to be greater than or equal to the reflux pressure drop Δ pl of the condensed liquid and the flow pressure drop Δ pv of the vapor. The capillary force mainly depends on the capillary radius R of the liquid absorbing core and the hydrophilicity of the liquid absorbing core (namely the contact angle theta between the liquid absorbing core and the working medium), and the capillary radius R of the liquid absorbing core is difficult to have a lifting space at present, so that the lifting of the surface hydrophilicity of the liquid absorbing core becomes an important direction for improving the capillary force of the liquid absorbing core.
Disclosure of Invention
The application provides a liquid absorption core, a temperature equalization plate, a manufacturing method and electronic equipment.
The embodiment of the application provides a liquid absorption core which is applied to a temperature equalization plate. The liquid absorption core is made of copper, and the range of the wetting angle between the surface of the liquid absorption core and the working medium in the temperature equalizing plate is 0-40 DEG
The embodiment of the application further provides a temperature equalization plate applied to electronic equipment. The temperature equalizing plate comprises the liquid absorbing core and a working medium; the temperature difference of the cold and hot sections of the temperature equalizing plate is less than or equal to 3.8 ℃.
The embodiment of the present application further provides a method for manufacturing a vapor chamber, where the vapor chamber includes the wick, and the method includes:
carrying out high-temperature oxidation treatment on the semi-finished product of the liquid absorption core to obtain a copper oxide surface;
and carrying out high-temperature reduction treatment on the semi-finished product with the copper oxide surface to obtain the liquid absorption core.
An embodiment of the present application further provides an electronic device, including:
the temperature equalizing plate is attached to the heat source and used for transferring heat.
The liquid absorption core provided by the embodiment of the application is characterized in that the surface of the liquid absorption core and the wetting angle range of the working medium in the temperature-uniforming plate are 0-40 degrees, so that the water climbing speed of the copper surface and the saturated water quantity of a unit area are improved, and the hydrophilic performance of the copper surface is also improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic perspective view of an electronic device provided in an embodiment of the present application;
FIG. 2 is an exploded schematic view of the electronic device shown in FIG. 1;
FIG. 3 is an exploded view of the thermal block of the electronic device of FIG. 2;
FIG. 4 is a schematic cross-sectional view of the vapor plate shown in FIG. 2;
FIG. 5 is a partial enlarged view of area A shown in FIG. 4;
FIG. 6 is a schematic diagram of an included angle between a working medium and a surface of a solid material in a hydrophilic state;
FIG. 7 is a schematic diagram of an included angle between a working medium and a surface of a solid material in a hydrophobic state;
FIG. 8 is a schematic flow chart illustrating a method for fabricating a vapor chamber according to the related art;
fig. 9 is a schematic flowchart of a method for manufacturing a vapor chamber according to an embodiment of the present disclosure;
FIG. 10 is a surface topography of a copper mesh without the method of making the vapor chamber provided herein;
FIG. 11 is a surface topography of a copper mesh using the method of making the vapor chamber provided herein;
fig. 12 is a flowchart of a method for manufacturing a vapor chamber according to another embodiment of the present application.
Detailed Description
The present application will be described in further detail with reference to the following drawings and examples. It is to be noted that the following examples are only illustrative of the present application, and do not limit the scope of the present application. Likewise, the following examples are only some examples and not all examples of the present application, and all other examples obtained by a person of ordinary skill in the art without any inventive work are within the scope of the present application.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.
Referring to fig. 1, fig. 1 is a schematic perspective view of an electronic device according to an embodiment of the present disclosure.
The present application provides an electronic device 1000. Specifically, the electronic device 1000 may be any of various types of computer system devices that are mobile or portable and that perform wireless communications. Specifically, electronic device 1000 may be a mobile or smart phone (e.g., an iPhone (TM) based, AndRoid (TM) based phone), a PoRtable gaming device (e.g., a Nintendo DS (TM), PlayStation Portable (TM), Game Advance (TM), iPhone (TM)), a laptop, a PDA, a PoRtable Internet appliance, a music player, and data storage device, other handheld devices, and devices such as headphones, among others, and electronic device 1000 may also be other wearable devices that require charging (e.g., a Head Mounted Device (HMD) such as an electronic bracelet, an electronic necklace, electronic device 1000, or a smart watch).
Referring to fig. 2, fig. 2 is an exploded view of the electronic device shown in fig. 1.
The embodiment of the present application provides an electronic device 1000, taking a mobile phone as an example, which may include but is not limited to: a vapor chamber 100 and a heat source 200. The temperature-uniforming plate 100 is attached to the heat source 200, so that the heat source 200 has a good surface heat dissipation effect and a uniform temperature. The heat source can be a mainboard, a battery and other easy-to-heat components. The electronic device 1000 may further include a battery 300, a housing 400 and a display screen 500, wherein the housing 400 and the display screen 500 enclose an accommodating space for accommodating the temperature-uniforming plate 100, the heat source 200 and the battery 300.
It should be noted that the terms "first" and "second" in the present application are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present application, "plurality" means at least two, e.g., two, three, etc., unless explicitly specifically limited otherwise.
Referring to fig. 3 to 5, fig. 3 is an exploded schematic view of a temperature equalization plate in the electronic device shown in fig. 2, fig. 4 is a cross-sectional schematic view of the temperature equalization plate shown in fig. 2, and fig. 5 is a partially enlarged view of a region a shown in fig. 4.
The vapor plate 100 may include a first cover plate 10, a second cover plate 20, a wick 30, and a working medium 40. The first cover plate 10 and the second cover plate 20 are sealably connected to form an accommodating chamber 101, and the wick 30 is accommodated in the accommodating chamber 101 and can be fixedly connected to the first cover plate 10.
The edge of the first cover plate 10 is provided with a first groove 11, the edge of the second cover plate 20 is provided with a second groove 21 corresponding to the first groove 11, and when the first cover plate 10 is connected with the second cover plate 20 in a sealing manner, the first groove 11 and the second groove 21 enclose a communication opening 102 communicated with the accommodating cavity 101.
Further, the first cover 10, the second cover 20, and the wick 30 constitute a housing assembly 103. The working medium 40 is accommodated in the accommodating chamber 101 through the communication port 102, and can flow back and forth in the accommodating chamber 101 through the wick 30.
The material of the first cover plate 10 may be, but is not limited to, metal such as aluminum alloy, copper, and the like. Because of the relatively large surface tension of water, working medium 40 is typically water. Since copper has good thermal conductivity and ductility, the wick 30 is usually manufactured by a copper powder sintering or copper mesh process, and the copper powder or copper mesh used for manufacturing the wick 30 usually has a copper content (usually mass fraction) of not less than 80%.
The first cover plate 10 is an evaporation part, is attached to a heat source, and is used for absorbing heat of the heat source and transferring the absorbed heat to the working medium 40; the second cover plate 20 is a condensation section for cooling the working medium 40. Specifically, the first cover plate 10 is heated, the working medium 40 in the wick 30 corresponding to the heated position of the first cover plate 10 is evaporated, the working medium 40 in an evaporated state flows to the side close to the second cover plate 20 under a small pressure difference and is condensed into liquid and releases heat after encountering cold, and the condensed liquid returns to the side close to the first cover plate 10 by utilizing the capillary force provided by the wick 30, so that the cycle is repeated.
Referring to fig. 6 and 7, fig. 6 is a schematic diagram of an included angle between a working medium and a solid material surface in a hydrophilic state, and fig. 7 is a schematic diagram of an included angle between a working medium and a solid material surface in a hydrophobic state.
Working medium 40 is exemplified by water, and the interaction conditions between water molecules and the surfaces of different solid materials are different. At the intersection of three phases of water (liquid phase), material (solid phase) and air (gas phase), the included angle theta formed by the tangent line along the surface of the water drop and the contact surface of the water and the material is called a contact angle (also called wetting angle), the theta angle is between 0 and 180 degrees, and the wetting degree can be estimated according to the size of the theta angle. The smaller the angle θ, the better the wettability. If theta is 0 DEG, the material is completely wetted; theta < 0 DEG.ltoreq.90 DEG, the material is hydrophilic (such as glass, concrete and many mineral surfaces), as shown in FIG. 6; 180 degrees is more than theta is more than 90 degrees, and the material is hydrophobic (such as water drops on the surface of paraffin and asphalt) as shown in figure 7; when θ is 180 °, the material is completely non-wetting.
From Pcmax2 σ cos θ/R (where PcmaxThe maximum additional pressure of the curved surface, σ is the surface tension of the working medium 40, and R is the capillary radius of the liquid-absorbing core 30), the magnitude of the capillary force mainly depends on the capillary radius R of the liquid-absorbing core 30 and the hydrophilicity of the liquid-absorbing core 30 (the contact angle θ between the working medium 40 and the liquid-absorbing core 30), and at present, the capillary radius R of the liquid-absorbing core 30 has a difficult lifting space, so that the lifting of the surface hydrophilicity of the liquid-absorbing core 30 becomes an important direction for improving the capillary force of the liquid-absorbing core 30.
Further, cos θ is calculated according to the Wenzel equationaR is a roughness factor (etc.)The ratio of the actual contact area to the imaginary contact area at the solid-liquid interface, r ≧ 1), θaAnd theta is the contact angle of working medium 40 and wick 30. From this equation, the apparent contact angle θaThe surface roughness is positively correlated, i.e., the higher the roughness of the hydrophilic surface, the better the hydrophilicity is exhibited. Due to the capillary action of the roughness structure, water droplets are drawn into the internal space of the roughness structure on such a surface, and thus spread rapidly, achieving super-hydrophilic properties.
At present, the construction of a rough structure on the surface of a hydrophilic material is one of important means for improving the hydrophilic performance. For example, although hydrophilic coatings that can be produced by physical vapor deposition, chemical vapor deposition, atomic layer deposition, and the like, are superior, such schemes are inefficient, costly, and not suitable for mass production. In addition, the copper surface of the wick 30 can be oxidized to copper oxide by a thermal oxidation method, and the copper oxide has high surface roughness, so that the hydrophilicity of the wick 30 can be effectively improved, but the structure is partially reduced to cuprous oxide during long-term storage in the air, and the cuprous oxide has hydrophobicity, so that the hydrophilicity of the wick 30 is changed to hydrophobicity. Therefore, a new method for manufacturing the vapor chamber 100 is needed.
Referring to fig. 3-5 and 8 together, fig. 8 is a flow chart illustrating a method for fabricating a vapor chamber in a related art (conventional process).
In the related art, the conventional manufacturing method of the vapor chamber comprises the following steps:
in step S01, a first cover plate 10, a second cover plate 20, and a wick 30 are provided.
The wick 30 in step S01 is manufactured by a conventional process, and the surface of the wick 30 is made of a copper simple substance or a copper simple substance, copper oxide, cuprous oxide, or the like. It will be appreciated that wick 30 may be a copper mesh structure, a copper powder sintered structure, or a grooved structure. The material of the first cover plate 10 and the second cover plate 20 may be one of metal materials such as elemental copper, copper alloy, aluminum alloy, and magnesium alloy, and is not limited in particular.
Specifically, step S01 includes the steps of:
in step S11, first cover plate 10, second cover plate 20, and liquid-absorbing core 30 are cleaned.
Wherein the cleaning includes degreasing and descaling. The oil removing process comprises the following steps: and (3) placing the first cover plate 10, the second cover plate 20 and the liquid absorption core 30 into oil removal liquid to be used as cathode electrolysis, and washing the first cover plate 10, the second cover plate 20 and the liquid absorption core 30 after the oil removal is finished to obtain the first cover plate 10, the second cover plate 20 and the liquid absorption core 30 after the oil removal. The rust removal process comprises the following steps: and (3) placing the first cover plate 10, the second cover plate 20 and the liquid absorption core 30 into a derusting solution for soaking, and flushing the first cover plate 10, the second cover plate 20 and the liquid absorption core 30 after the derusting is finished to obtain the first cover plate 10, the second cover plate 20 and the liquid absorption core 30 after the derusting.
Step S02, welding the wick 30 to the first cover plate 10, and sealing the first cover plate 10 and the second cover plate 20 to form the receiving cavity 101.
Specifically, step S02 includes the steps of:
step S21, welding the wick 30 to the first cover plate 10;
step S22, forming a first groove 11 on the edge of the first cover plate 10 by punching;
in step S23, a second groove 21 corresponding to the first groove 11 is punched at the edge of the second cover plate 20.
When the first cover plate 10 is connected with the second cover plate 20 in a sealing manner, the first groove 11 and the second groove 21 enclose a communication opening 102 for communicating the accommodating cavity 101.
Step S24, the first cover plate 10 and the second cover plate 20 are hermetically connected to form the housing assembly 103 and enclose the accommodating cavity 101.
Specifically, the first cover plate 10 and the second cover plate 20 are first connected by means of spot welding to ensure the firmness of welding; the first cover plate 10 and the second cover plate 20 are then hermetically connected by brazing to ensure the tightness of the weld. The housing assembly 103 includes a first cover plate 10, a second cover plate 20, and a wick 30.
Step S03, the accommodating chamber 101 is vacuumized, and water is filled into the accommodating chamber 101.
Specifically, step S03 includes the following steps:
in step S31, the communication pipe 40 is inserted into the communication port 102, and the communication pipe 40 is fixedly connected to the first lid 10 and the second lid 20.
The communicating tube 40 is used for communicating the outside with the accommodating chamber 101.
Step S32, the accommodating chamber 101 is vacuumized.
Specifically, the accommodating cavity 101 is vacuumized for multiple times through the communicating pipe 40, so that air in the accommodating cavity 101 is completely extracted, and the air in the accommodating cavity 101 is prevented from influencing the flowing speed of the working medium 40.
Step S33, the accommodating chamber 101 is filled with water.
Specifically, the housing chamber 101 is filled with water through the communication pipe 40. After the water injection is completed, the accommodating cavity 101 can be vacuumized again to prevent the water from containing air.
Step S04 is to cut the connection tube 40 and shape the first cover plate 10 and the second cover plate 20.
Specifically, step S04 includes the steps of:
in step S41, the communication tube 40 is cut.
Specifically, the communicating tube 40 is cut to reduce the size of the vapor chamber 100, thereby reducing the occupied space of the vapor chamber 100. Meanwhile, in the process of cutting the communication pipe 40, the communication pipe 40 is sealed to completely seal the accommodation chamber 101.
In step S42, the temperature equalization plate 100 is shaped.
Specifically, the vapor chamber 100 is shaped such that the shape of the vapor chamber 100 is adapted to one side surface of the heat source, and the vapor chamber is sufficiently attached to the surface of the heat source, thereby improving the heat transfer efficiency.
Step S05, the temperature equalization plate 100 is aged and performance tested.
Specifically, step S05 includes the steps of:
step S101, aging the surface of the vapor chamber 100 to improve the stability and reliability of the surface of the vapor chamber 100.
Step S102, performing performance detection on the vapor chamber 100 to ensure the reliability of the vapor chamber 100.
In the manufacturing method of the temperature equalization plate 100 in the related art, if the surface of the liquid absorption core 30 is a copper simple substance, the surface roughness of the liquid absorption core 30 is small, and the wetting angle between the working medium 40 and the surface of the liquid absorption core 30 is large; if the surface of the semi-finished product of the liquid absorption core 30 contains copper oxide after the high-temperature oxidation treatment, the copper oxide is easy to be converted into cuprous oxide after being placed for a long time, and the cuprous oxide has hydrophobicity and influences the hydrophilicity of the liquid absorption core 30.
Referring to fig. 9, fig. 9 is a schematic flow chart illustrating a manufacturing method of a vapor chamber according to an embodiment of the present application.
On the basis of the related art, the embodiment of the application provides a first manufacturing method of a novel temperature-uniforming plate. In which the wick 30 of the prior art corresponds to a semi-finished product of the wick 30 of the embodiment of the present application. Specifically, the following step is further included before step S01 in the related art:
step S101, performing high-temperature oxidation treatment on the semi-finished product of the wick 30 to obtain a copper oxide surface.
The semi-finished wick 30 in step S101 refers to the wick 30 in the related art (conventional process), and specifically, the wick 30 that has not been subjected to the oxidation-reduction reaction. Wherein, the high-temperature oxidation treatment can be: and placing the semi-finished product of the liquid absorption core 30 in the atmosphere of oxygen, oxygen-nitrogen mixed gas or air, and heating for 0.5-4 h in an environment at 100-400 ℃. In this embodiment, the copper is placed in an oven, and the oven is filled with air. It is understood that the temperature of the heating environment may be any one of 100 ℃, 150 ℃, 200 ℃, 250 ℃, 300 ℃, 350 ℃ and 400 ℃, and is not particularly limited. The heating time period may be 0.5h, 1h, 1.5h, 2h, 3h or 4h, and is not particularly limited herein. In other embodiments, the copper may be placed in a temperature-controllable reaction environment such as a high-temperature reaction furnace to more accurately control the oxidation temperature.
The liquid absorption core 30 provided by the embodiment of the application is one of a copper mesh liquid absorption core, a copper powder sintered liquid absorption core or a copper surface groove liquid absorption core, the copper powder or the copper mesh used for manufacturing the liquid absorption core 30 generally has a copper content of not less than 80%, on one hand, the copper has good ductility, so that the liquid absorption core 30 is convenient to produce and process, and on the other hand, the copper has good heat conductivity, so that heat transfer is convenient. Under the condition of high temperature and oxidizing atmosphere, a copper oxide surface with special micro-nano structures can be formed on the copper surface of the liquid absorption core 30, and the micro-nano structures can obviously improve the roughness of the surface of the liquid absorption core 30, so that the hydrophilic performance of the surface of the liquid absorption core 30 is improved.
In yet another embodiment, the high temperature oxidation treatment of the semifinished wick 30 is: and placing the semi-finished product of the liquid absorption core 30 in the atmosphere of oxygen, oxygen-nitrogen mixed gas or air, and heating for 2-4 h in the environment of 150-250 ℃. For example, the wick 30 may be heated at any one of 150 ℃, 180 ℃, 200 ℃, 230 ℃ and 250 ℃ for 2 hours, 2.5 hours, 3 hours, 3.5 hours or 4 hours, without any particular limitation. Specifically, when the heating temperature is in a relatively stable range (e.g., 200-220 ℃), the ratio of elemental copper participating in the oxidation reaction on the copper surface of the wick 30 can be more accurately controlled by controlling the heating time, and thus the roughness of the copper surface can be more accurately controlled. For example, at a temperature of about 200 ℃, when the heating time is 0.5h, about 20% of the elemental copper on the copper surface of wick 30 undergoes an oxidation reaction, when the heating time is 1h, about 50% of the elemental copper on the copper surface of wick 30 undergoes an oxidation reaction, and when the heating time is 2h, about 80% of the elemental copper on the copper surface of wick 30 undergoes an oxidation reaction, that is, under a certain temperature condition, the proportion of the elemental copper on the copper surface of wick 30 that participates in the oxidation reaction is approximately linear with the heating time within a certain period of time (e.g., 0-2 h).
Step S102, a high-temperature reduction process is performed on the semi-finished product having the copper oxide surface to obtain the wick 30.
Specifically, the high-temperature reduction treatment of the semi-finished product with the copper oxide surface is as follows: and placing the semi-finished product subjected to high-temperature oxidation treatment in a nitrogen-hydrogen mixed gas atmosphere, and heating for 0.5-4 h in an environment at 300-800 ℃ to reduce the oxidation product on the surface of the semi-finished product of the liquid absorption core 30 into elemental copper. Specifically, the reduction temperature for reducing the oxidation product on the surface of the semi-finished product of the wick 30 to elemental copper may be 300 ℃, 400 ℃, 500 ℃, 600 ℃, 700 ℃, or 800 ℃, and is not particularly limited herein; the reduction time period may be 0.5h, 1h, 1.5h, 2h, 3h or 4h, and is not particularly limited herein. It can be understood that although the copper oxide on the surface of the semi-finished product is reduced to elemental copper, the micro-nano structure generated by the semi-finished product participating in the oxidation reaction is retained, that is, even if the surface elements of the semi-finished product of the wick 30 are the same as those of the wick 30 after the high-temperature oxidation-reduction reaction, the surface structure of the semi-finished product of the wick 30 is different from the surface microstructure of the wick 30 after the high-temperature oxidation-reduction reaction, and specifically, the surface roughness of the wick 30 after the high-temperature oxidation-reduction reaction is greater.
The surface of the high-temperature oxidized wick 30 semi-finished product may include elemental copper, copper oxide, cuprous oxide, etc., and the existence of the oxide changes the property of copper, and if the high-temperature oxidized wick 30 semi-finished product is directly welded and fixed to the first cover plate 10, the problem of infirm welding may exist. In addition, the existence of cuprous oxide causes the water climbing speed and the saturated water amount of the wick 30 to be influenced to a certain extent due to the hydrophobicity of cuprous oxide. Therefore, it is necessary to reduce the oxidation product. After the oxidation product is subjected to thermal reduction treatment, a rough structure simple substance copper surface is formed, at the moment, a copper net is processed into a liquid absorption core 30, and the wetting angle of the working medium 40 and the surface of the liquid absorption core 30 is close to 0 degree. When about 20% of the elemental copper on the copper surface of the liquid absorption core 30 is subjected to oxidation-reduction reaction, the wetting angle between the working medium 40 and the surface of the liquid absorption core 30 is about 40 degrees; when about 50% of the elemental copper on the copper surface of the liquid absorption core 30 is subjected to oxidation-reduction reaction, the wetting angle between the working medium 40 and the surface of the liquid absorption core 30 is about 20 degrees; when about 80% of the elemental copper on the copper surface of the liquid absorbing core 30 is subjected to oxidation-reduction reaction, the wetting angle between the working medium 40 and the surface of the liquid absorbing core 30 is about 10 DEG
In other embodiments, the thermal reduction treatment of the copper oxide surface is: and (3) placing the copper containing the copper oxide surface in a gas atmosphere of nitrogen-hydrogen mixed gas, and heating for 2-4 h in an environment at 600-800 ℃. Specifically, the heating temperature may be 600 ℃, 650 ℃, 700 ℃, 750 ℃ or 800 ℃, and is not particularly limited herein; the reduction time period may be 2h, 2.5h, 3h, 3.5h or 4h, and is not particularly limited herein. By the mode, the copper oxide on the surface of the copper can be completely converted into the copper simple substance.
Optionally, the nitrogen-hydrogen mixed gas comprises 90-95% of nitrogen and 5-10% of hydrogen. In this embodiment, the nitrogen accounts for 95% and the hydrogen accounts for 5%. In other embodiments, the nitrogen is present at 92% and the hydrogen is present at 8%; or the proportion of nitrogen is 90%, and the proportion of hydrogen is 10%, which are not examples.
In the embodiment of the present application, taking the example of the wick 30 being manufactured by copper mesh manufacturing process, please refer to fig. 10 and 11, in which fig. 10 shows the surface topography of the copper mesh in the conventional manufacturing process (without high temperature oxidation-reduction reaction), and fig. 11 shows the surface topography of the copper mesh in the high temperature oxidation-reduction reaction.
As can be seen from comparison between fig. 10 and fig. 11, the roughness of the copper surface after high-temperature oxidation becomes large, and correspondingly, as shown in table 1, the water climbing speed and the unit saturated water amount of the copper mesh also gradually increase, and the above pictures and data show that the roughness of the copper mesh surface is effectively improved by performing the oxidation-reduction reaction on the copper mesh surface, thereby improving the capillary pressure of the copper mesh.
TABLE 1 Performance data for conventional processed and treated copper mesh
Figure BDA0003062683750000111
Referring to table 1, table 1 provides data on the time taken for a 300 mesh copper mesh (i.e., 300 mesh per square centimeter) to reach water saturation with a treated (high temperature redox reaction) copper mesh under conventional process conditions (no high temperature redox reaction employed) and the amount of saturated water per unit mass, using a 300 mesh copper mesh as an example.
Overall, the data from table 1 are unambiguously obtained: the average time taken for the conventional copper mesh to reach water saturation in the conventional process was 28.6s, the average time taken for the copper mesh of the present example to reach water saturation using the high temperature redox reaction was 18.6s, and the average time taken for the treated copper mesh to reach water saturation was relative to the average time taken for the treated copper mesh to reach water saturationThe average time taken for the copper mesh to reach water saturation before treatment was reduced by 36.4%. The average value of the saturated water amount per unit area of the copper mesh before the treatment of the copper mesh (conventional process) was 0.0895g/cm2The average value of the saturated water amount per unit area of the copper mesh after the copper mesh treatment was 0.0984g/cm2The average value of the saturated water amount per unit area of the treated copper mesh was improved by 9.9% compared with the average value of the saturated water amount per unit area before treatment. In conclusion, the treated copper mesh has greatly improved water climbing speed and saturated water amount per unit area compared with the conventional manufacturing process, namely the hydrophilic performance of the copper mesh is greatly improved.
Comparing the ratio of the time taken for each set of the copper mesh to reach the water saturation under the conventional process condition (i.e., T2/T1) after treatment alone shows that the time taken for the treated copper mesh to reach the water saturation is greatly increased compared with the time taken for the treated copper mesh to reach the water saturation under the conventional process condition, and the value is relatively stable. That is, the water climbing speed (the time for reaching the water saturation) of the treated copper mesh is greatly improved compared with the conventionally supported copper mesh, and particularly the circulation speed of the working medium 40 in the copper mesh in the temperature-uniforming plate 100 is faster.
Comparing the saturation water ratio (i.e. T2/T1) of each group of the copper mesh after treatment with the conventional supporting condition alone, it can be seen that part of the copper mesh is obviously lifted, such as the copper mesh 1, the copper mesh 2 and the copper mesh 3, and the other part of the copper mesh is not obviously lifted, such as the copper mesh 4 and the copper mesh 5, but the saturation water of the treated copper mesh is improved compared with the copper mesh of the conventional process whether the lifting is obvious or not. Specifically, the heat transferred per unit time in the vapor chamber 100 is more in the form of copper mesh.
In addition, the processing method of the copper mesh, that is, the manufacturing method of the uniform temperature plate 100, adopts a mode of oxidation before reduction, and does not change the components on the surface of the copper mesh, that is, the surface of the copper mesh is always elemental copper, and does not change other properties of the copper mesh, so that the copper mesh can maintain good welding performance.
It is understood that the wick 30 may also be formed by sintering copper powder and forming grooves, and is not limited thereto.
According to the manufacturing method of the temperature-uniforming plate, the copper surface of the liquid absorption core 30 is oxidized and then reduced to obtain the simple substance copper surface with a rough structure, so that the water climbing speed of the copper surface and the saturated water quantity of unit mass are increased, and the hydrophilic performance of the copper surface is also improved; in addition, the manufacturing method of the temperature equalization plate 100 provided by the embodiment of the application does not change the components of the copper surface, so that the copper can keep good welding performance.
Referring to fig. 12, fig. 12 is a schematic flow chart illustrating a manufacturing method of a vapor chamber according to another embodiment of the present application. On the basis of the prior art, the embodiment of the application also provides a second manufacturing method of the novel temperature-uniforming plate. In which the wick 30 of the prior art corresponds to a semi-finished product of the wick 30 of the embodiment of the present application. Specifically, the following steps are also included after step S24 in the related art:
in step S201, the housing assembly 103 (including the wick 30) is subjected to a high-temperature oxidation process to obtain a copper oxide surface on the housing assembly 103.
Wherein, the high-temperature oxidation treatment can be: the shell assembly 103 is placed in an oxygen, oxygen-nitrogen mixed gas or air atmosphere and heated for 0.5-4 h in an environment at 100-400 ℃. In this embodiment, the housing assembly 103 is placed in an oven, and the oven is filled with air. In other embodiments, the copper may be placed in a temperature-controllable reaction environment such as a high-temperature reaction furnace to more accurately control the oxidation temperature.
In step S202, the case assembly 103 having the copper oxide surface is subjected to a high-temperature reduction treatment.
Specifically, the high-temperature reduction treatment of the case assembly 103 having a copper oxide surface is: placing the shell assembly 103 subjected to high-temperature oxidation treatment in a gas atmosphere of nitrogen-hydrogen mixed gas, and heating for 0.5-4 h in an environment at 300-800 ℃ to reduce oxidation products on the surface of the shell assembly 103 into elemental copper. It is understood that although the copper oxide on the surface of the housing assembly 103 is reduced to elemental copper, the micro-nano structure generated by the semi-finished product participating in the oxidation reaction is maintained, that is, even though the surface elements of the wick 30 are the same as those of the wick 30 after the high-temperature oxidation-reduction reaction, the surface structure of the semi-finished product of the wick 30 is different from that of the surface of the wick 30 after the high-temperature oxidation-reduction reaction, and in particular, the surface roughness of the wick 30 after the high-temperature oxidation-reduction reaction is greater.
TABLE 2 comparison of the temperature uniformity of the conventional process and the temperature uniformity of the first and second manufacturing methods (temperature difference in the heating and cooling sections-Delta T)
Figure BDA0003062683750000131
As can be seen from the second table, the temperature difference range of the cold and hot sections of the temperature-uniforming plate 100 in the conventional process is 4.0-4.2 ℃, and the average value is 4.14; the temperature difference range of the cold and hot sections of the uniform temperature plate 100 manufactured by the first manufacturing method of the uniform temperature plate 100 is 2.9-3.8 ℃, the average value is 3.32 ℃, and the temperature difference range of the cold and hot sections of the uniform temperature plate 100 manufactured by the second manufacturing method of the uniform temperature plate 100 is 2.7-3.8 ℃, and the average value is 3.38 ℃. Compared with the temperature equalizing plate 100 manufactured by the conventional manufacturing process, the temperature equalizing plate 100 manufactured by the first and second manufacturing methods of the temperature equalizing plate 100 has the advantages that the lower limit, the upper limit and the average value of the temperature difference range of the cold and hot sections are greatly improved, namely, the hydrophilic performance of the liquid absorbing core 30 in the temperature equalizing plate 100 manufactured by the first and second manufacturing methods of the temperature equalizing plate 100 is far larger than that of the liquid absorbing core 30 in the temperature equalizing plate 100 manufactured by the conventional manufacturing process, and further, the temperature equalizing performance of the temperature equalizing plate 100 manufactured by the first and second manufacturing methods of the temperature equalizing plate 100 is obviously better than that of the temperature equalizing plate 100 manufactured by the conventional manufacturing process.
The above description is only a part of the embodiments of the present application, and not intended to limit the scope of the present application, and all equivalent devices or equivalent processes performed by the content of the present application and the attached drawings, or directly or indirectly applied to other related technical fields, are also included in the scope of the present application.

Claims (12)

1. The liquid absorption core is applied to a temperature-uniforming plate and is characterized in that the liquid absorption core is made of copper, and the range of the wetting angle between the surface of the liquid absorption core and working media in the temperature-uniforming plate is 0-40 degrees.
2. The wick according to claim 1, wherein the liquid-climbing time of the wick is 15 to 25s, and the unit saturated water amount is 0.09 to 0.12g/cm2。
3. The wick according to any one of claims 1 to 2, wherein the wick is a copper mesh wick, a groove wick or a copper powder sintered wick.
4. The temperature-equalizing plate is applied to electronic equipment, and is characterized by comprising a liquid absorption core and a working medium according to any one of claims 1-3; the temperature difference of the cold and hot sections of the temperature equalizing plate is less than or equal to 3.8 ℃.
5. A method of making a vapor chamber comprising said wick, said method comprising:
carrying out high-temperature oxidation treatment on the semi-finished product of the liquid absorption core to obtain a copper oxide surface;
and carrying out high-temperature reduction treatment on the semi-finished product with the copper oxide surface to obtain the liquid absorption core.
6. The method according to claim 5, wherein said subjecting the semifinished wick product to a high-temperature oxidation treatment comprises:
and placing the semi-finished product in an oxygen, oxygen-nitrogen mixed gas or air atmosphere, and heating at the temperature of 100-400 ℃ for 0.5-4 h.
7. The method of claim 6, wherein said subjecting said semifinished wick to a high temperature oxidation treatment comprises:
and placing the semi-finished product in an oxygen, oxygen-nitrogen mixed gas or air atmosphere, and heating at the temperature of 150-250 ℃ for 2-4 h.
8. The method according to any one of claims 5 to 7, wherein the step of subjecting the semi-finished product having the copper oxide surface to a high-temperature reduction treatment comprises:
and placing the semi-finished product with the copper oxide surface in a gas atmosphere of nitrogen-hydrogen mixed gas, and heating at the temperature of 300-800 ℃ for 0.5-4 h.
9. The method of claim 8, wherein said subjecting said semi-finished product having said copper oxide surface to a high temperature reduction process comprises: and placing the semi-finished product with the copper oxide surface in a gas atmosphere of nitrogen-hydrogen mixed gas, and heating at 600-800 ℃ for 2-4 h.
10. The method according to any one of claims 8 to 9, wherein the volume fraction of nitrogen in the nitrogen-hydrogen mixed gas is 90% to 95%.
11. The method of claim 10, further comprising:
providing a first cover plate, a second cover plate and the wick;
welding the liquid suction core to the first cover plate, and connecting the first cover plate and the second cover plate in a sealing manner to enclose an accommodating cavity;
and vacuumizing the accommodating cavity, and filling working media into the accommodating cavity.
12. An electronic device, comprising:
the temperature-equalizing plate and the heat source as claimed in any one of claims 1 to 4, wherein the temperature-equalizing plate is attached to the heat source for transferring heat.
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