CN113277730B - Low dielectric constant glass composition - Google Patents
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- CN113277730B CN113277730B CN202110688872.1A CN202110688872A CN113277730B CN 113277730 B CN113277730 B CN 113277730B CN 202110688872 A CN202110688872 A CN 202110688872A CN 113277730 B CN113277730 B CN 113277730B
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
Abstract
The present invention provides a low dielectric constant glass composition having a low linear expansion coefficient. A low dielectric constant glass composition comprising, in mole percent: SiO 2264.8～68.2mol％；B2O323.9～28.8mol％；R2O2.5-6.51 mol%; wherein, R is2O is Li2O、Na2O and K2One or more of O, and the glass linear expansion coefficient alpha at 20-120 ℃ is 34.5-40 multiplied by 10‑7K is the sum of the values of k and k. The invention obtains the glass with high transmittance, lower linear expansion coefficient and dielectric constant and excellent bulk resistivity performance in visible and near infrared light bands by reasonably selecting the components and the content of the glass, has the characteristics of matching with the expansion coefficient of a silicon wafer and the like, is particularly suitable for photoetching glass substrate materials and the like, and has good supporting and protecting effects on electronic devices packaged in the materials.
Description
Technical Field
The invention relates to a low dielectric constant glass composition, in particular to a micro-channel glass substrate and a semiconductor packaging composition which are suitable for preparing a glass adapter plate and an integrated passive device.
Background
Since the 50 s of the last century, the conventional two-dimensional integrated circuit has been developed in accordance with moore's law by increasing the integration level and performance of a chip by reducing the size of transistors and enlarging the area of the chip. However, as transistor feature sizes continue to shrink, process complexity and difficulty scale. When the gate length, the dielectric layer thickness and the junction depth in the chip are reduced in size, the cross-sectional area of the global interconnection line is reduced and the length of the global interconnection line is increased, so that the global interconnection delay is exponentially increased, and the performance of the chip is limited. Furthermore, the increased interconnect length also brings about other problems, such as: crosstalk, noise, power consumption, power distribution, etc. For this reason, the international semiconductor technology blueprint proposes a three-dimensional integrated circuit concept, and a 3D IC is formed by connecting a plurality of device layers in series in a vertical interconnection manner, and distributing interconnection lines by using an adapter plate between the layers. The number and the average length of the global interconnection lines can be shortened by a vertical interconnection mode, the chip area is reduced, and a plurality of advantages are brought, so that the substrate material is required to have a lower dielectric constant, and the material has a small expansion coefficient, a certain strength and is not easy to deform by heat.
In the case of a microchannel plate material, in order to form a stable electric field and supply sufficient electrons, it is necessary to have a sufficiently high bulk resistance, and as a resistor for distributing an electric potential between the emitters, the optimum range of the bulk resistance is 109～1012Ω · cm, sufficient current can be supplied to compensate for the secondary electron flow emitted, and if the resistivity is too high, sufficient quantities of electrons cannot be supplied continuously; because of the large negative resistance temperature coefficient of the glass, the current flowing through the glass body is large while compensating the large secondary electron current, thereby generating a large amount of joule heat and limiting the practicability. If the resistivity is too low, undesirable heating of the material may occur. Only by maintaining a suitable resistivity, no substantial current can flow in the vitreous body and the joule heating effect is minimized, thus enabling constant working conditions to be maintained.
《SiO2/B2O3Influence of quality ratio on low dielectric sealing glass performance, aromatic substances, etc., material guide, 33(Z1), P199-201(2019), by studying SiO2/B2O3The mass ratio achieves lower dielectric constant and dielectric loss, but it is mainly for sealing glass materials, and does not consider the bulk resistivity of the material.
The influence of boron oxide on dielectric properties of alkali-free aluminoborosilicate glass, such as neon, glass and enamel 41(4), P7-11(2013), adopts SiO2-B2O3-Al2O3Based on CaO-MgO systems by using B2O3CaO is gradually replaced to prepare glass with low dielectric constant, and the glass system does not contain alkali metal oxide, so the glass system has high smelting and forming difficulty, easy material melting difficulty and poor glass uniformity.
Disclosure of Invention
The invention aims to provide a low dielectric constant glass composition with a lower linear expansion coefficient.
The technical problem to be solved by the invention is as follows: a low dielectric constant glass composition comprising, in mole percent: SiO 2264.8～68.2mol％；B2O3 23.9～28.8mol％；R2O2.5-6.51 mol%; wherein, R is2O is Li2O、Na2O and K2One or more of O, and the glass linear expansion coefficient alpha at 20-120 ℃ is 34.5-40 multiplied by 10-7/k。
Further, the components of the catalyst also comprise, in mole percentage: al (Al)2O3 0～3.1mol％；MO 0～5mol％；Sb2O30-0.1 mol%, wherein MO is one or two of BaO and SrO.
Low dielectric constant glass composition having a composition expressed in mole percent by SiO264.8～68.2mol％；B2O323.9～28.8mol％；R2O 2.5～6.51mol％；Al2O3 0～3.1mol％；MO 0～3.4mol％；Sb2O30 to 0.1 mol%, wherein R is2O is Li2O、Na2O and K2One or more of O, and MO is one or two of BaO and SrO.
Further, the components are expressed by mole percent, wherein: SiO 2265-67 mol; and/or B2O325-28.5 mol%; and/or Al2O30.5-2.5 mol%; and/or R2O2.5-6 mol%; and/or MO 0-2.1 mol%, preferably 0-1.5 mol%; and/or Sb2O3 0.04～0.07mol％。
Further, the components are expressed by mole percent, wherein: SiO 22+B2O3Is 90 to 96.41 mol%, preferably 90 to 95 mol%.
Further, the components are expressed by mole percent, wherein: (SiO)2+Al2O3)/(R2O+B2O3) 1.98 to 2.38, preferably (SiO)2+Al2O3)/(R2O+B2O3) 2 to 2.3.
Further, the components are expressed by mole percent, wherein: (SiO)2+Al2O3+B2O3)/(R2O + MO) is 9.28 to 38.66, preferably (SiO)2+Al2O3+B2O3)/(R2O + MO) is 12 to 21.
Further, the components are expressed by mole percent, wherein: li2O 0.1～4.19mol％，Na2O0～2.06mol％；K2O 0～3.49mol％。
Furthermore, the components do not contain CaO; and/or does not contain PbO.
Further, the glass material T400nmNot less than 83%, preferably T400nmMore than or equal to 92 percent; and/or epsilonrIs 3.7 to 5.83, preferably epsilonr3.7 to 4.87; and/or the linear expansion coefficient alpha of the glass at 20-120 ℃ is 34.5-40 multiplied by 10-7K, preferably alpha at 20-120 ℃ is 35-39 multiplied by 10-7K is; and/or p is 1.1 × 1010Ω.cm～9.5×1013Ω. cm, preferably ρ 7.6 × 1010Ω.cm～9.3×1012Ω.cm。
An encapsulating material comprising the low dielectric constant glass composition.
The adapter board material contains the low dielectric constant glass composition.
A microchannel plate material comprising the low dielectric constant glass composition described above.
The invention has the beneficial effects that: the glass with high transmittance, low linear expansion coefficient and dielectric constant and excellent bulk resistivity performance in visible and near-infrared light bands is obtained by reasonably selecting the components and the content of the glass, has the characteristics of matching with the expansion coefficient of a silicon wafer and the like, is particularly suitable for photoetching glass substrate materials and the like, and has good supporting and protecting effects on electronic devices packaged in the materials; the components of the invention do not contain lead, cadmium, arsenic, thallium and other compounds, do not pollute human bodies and the environment, and are particularly suitable for communicationSubstrate and packaging of antenna material in the system; the glass contains partial BaO and SrO, so that the material melting difficulty of the glass can be reduced, the dielectric constant and the volume resistivity of the glass are balanced, and the expansion coefficient of the glass is optimized, so that the glass has higher transmittance and lower dielectric constant and expansion coefficient, and the better volume resistivity can be kept; the invention contains an alkali metal oxide Li2O、Na2O、K2O and a small amount of alkaline earth metal oxides BaO and SrO, and the mixed alkaline earth effect is relied on, so that the viscosity of the glass can be reduced, the migration transition of cations in the glass is reduced, and the effect of inhibiting the crystallization of the glass is achieved; the invention has the functions of protecting the circuit, isolating and insulating, and the like, and can be easily processed into a complex structure by processing modes such as photoetching and the like. In addition, the material has high surface flatness and good electrical insulation, is suitable for semiconductor packaging and the like, and can be prepared into a micro-channel glass substrate.
Detailed Description
The embodiments of the present invention will be described in detail below, but the present invention is not limited to the embodiments described below, and can be implemented with appropriate modifications within the scope of the object of the present invention. Note that, although the description of the duplicate description may be appropriately omitted, the gist of the invention is not limited to this.
The constituent components of the glass composition of the present invention and the effects thereof will be described in detail below, and it should be noted that, in the present specification, the content and the total amount of the respective components are expressed in mole percent (mol%), that is, the content and the total amount of the respective components are the percentage of the total mole of the component to all the components, if not specifically stated otherwise.
Unless otherwise indicated herein, the numerical ranges set forth herein include upper and lower values, and the terms "above" and "below" include the endpoints, and all integers and fractions within the range, and are not limited to the specific values listed in the defined range. As used herein, "and/or" is inclusive, e.g., "A and/or B," and means A alone, B alone, or both A and B.
The dielectric constant of glass is mainly determined by the electron-displacement polarizability of the ions in the network, while Si4+Has a low electron displacement polarizability (1.64X 10)3m-3) Thus having a lower dielectric constant, and SiO2The oxide is a glass former oxide, and the irregular continuous network is formed by the structural units of silicon-oxygen tetrahedron, so that the framework of the optical glass is formed. When SiO is present2When the content is less than 64.8 mol%, the dielectric constant of the glass is increased; but when SiO2When the content of (A) is more than 68.2 mol%, the glass frit has an excessively high melting temperature, and melting is difficult, and glass formation is difficult, so that SiO2The content of (b) is in the range of 64.8 to 68.2 mol%, preferably 65 to 67 mol%.
B3+Electron displacement polarizability (0.31X 10)3m-3) Bisi4+Lower, and B2O3The introduction of the (B) can improve the chemical stability of the glass and reduce the melting temperature, so that the low dielectric constant glass is mainly made of SiO2And B2O3When the content is mainly SiO2And B2O3Total amount of (3) SiO2+B2O3When the content is less than 90 mol%, the dielectric constant of the glass is higher, the strength and the insulativity of the glass are reduced, and the expansion coefficient and the resistivity of the glass are reduced; when SiO is present2+B2O3When more than 96.41 mol%, the glass transmittance is low, the glass is difficult to form, and the resistivity is too high, so SiO in the present application2+B2O390 to 96.41 mol% of SiO2+B2O3Preferably 90 to 95 mol%. In addition, with SiO2/B2O3The electron displacement polarizability of the ions in the network increases and the dielectric constant of the glass increases. Furthermore, the dielectric loss of glass is mainly determined by the compactness of the network structure, the tighter the network structure, the smaller the dielectric loss. With SiO2/B2O3Increase of (2), silicon-oxygen tetrahedron [ SiO ]4]The number of the glass is increased gradually, so that the network structure is connected more tightly, and the dielectric loss of the glass can be effectively reduced. But when SiO2/B2O3When too large, the network structure becomes loose and the dielectric loss increases slightly. In the present invention, B2O3The content of (b) is limited to 23.9 to 28.8 mol%, preferably 25 to 28.5mol％。
Al2O3Can greatly reduce the crystallization performance of the glass, can improve the strength and the hardness of the glass, and is Al2O3The glass has the advantages of enlarging the forming range of the glass in a three-dimensional phase diagram, enhancing the chemical stability of the glass, improving the transparency of the glass, improving the strength of the glass and the like. When Al is present2O3When the content of the aluminum oxide is higher than 3.1 mol%, unmelted impurities are easy to appear in the glass, so that the transmittance of the glass is reduced, the establishment of the combination of alkali metal ions and aluminum tetrahedron is weaker, the diffusion activation energy of the alkali metal ions is stronger, the glass network is more loose, the activity of the alkali metal ions is facilitated, and the dielectric constant and the dielectric loss are increased2O3The content of (b) is limited to 0 to 3.1 mol%, preferably 0.5 to 2.5 mol%.
The glass melting temperature of the system is high, the formula of the glass needs to be reasonably optimized, the melting temperature of the glass is reduced by introducing alkali metal elements, the melting difficulty is reduced, the glass forming performance is improved, and when R is used2When the O content is less than 2.5 mol%, the chemical stability and strength of the glass are improved, but the difficulty of vitrification is increased; when R is2When the O content is more than 6.51 mol%, the dielectric constant and dielectric loss of the glass sharply increase, and the insulating property of the glass is lowered, wherein R is2O is Li2O、Na2O、K2One or more of O, R2The total O content is limited to 2.5 to 6.51 mol%, preferably 2.5 to 6 mol%. Wherein Li2The content of O is limited to 0.1 to 4.19 mol%, and Na is2The O content is limited to 0 to 2.06 mol%; k2The O content is limited to 0 to 3.49 mol%.
The inventor researches and discovers that when (SiO)2+Al2O3)/(R2O+B2O3) When the glass transmittance is more than 2.38, the glass transmittance is reduced, even the glass is difficult to form, and the resistivity is too high; when (SiO)2+Al2O3)/
(R2O+B2O3) When the dielectric constant is less than 1.98, the dielectric constant and the expansion coefficient of the glass sharply increase, and the resistivity decreases, so that the present application (Si)O2+Al2O3)/(R2O+B2O3) 1.98-2.38, the glass has higher transmittance, lower dielectric constant and expansion coefficient, and can keep better resistivity, preferably (SiO)2+Al2O3)/(R2O+B2O3) 2 to 2.3.
Due to the alkali metal oxide R2O has a higher dielectric loss addition coefficient, different raw materials have different contribution sizes to the dielectric loss, the more the raw materials with higher addition coefficient are introduced, the higher the dielectric loss of the glass is, therefore, a small amount of alkaline earth metal oxide MO (not containing PbO) needs to be introduced, because the SiO of the invention2Higher in content, and R2The content of O is low, and the introduction of CaO easily causes the competition of calcium silicate ions, so that the glass cannot be formed easily, and the invention does not contain CaO. In the invention, MO is one or two of BaO and SrO, so that the dielectric loss of the glass can be reduced, and meanwhile, the introduction of the MO can increase the dielectric constant of the glass, so that the content of the MO needs to be strictly controlled. The total MO content in the present invention is limited to 0 to 3.4 mol%, preferably 0 to 2.1 mol%, and more preferably 0 to 1.5 mol%.
The inventor researches and discovers that when (SiO)2+Al2O3+B2O3)/(R2O + MO) < 9.28, the resistivity of the glass is too high, and the dielectric constant and the expansion coefficient are increased; when (SiO)2+Al2O3+B2O3)/(R2O + MO) > 38.66, the resistivity of the glass is too low. Thus, in the present application (SiO)2+Al2O3+B2O3)/(R2O + MO) is 9.28 to 38.66, preferably (SiO)2+Al2O3+B2O3)/(R2O + MO) is 12-21, the dielectric constant and the resistivity of the glass can be balanced within the range, the viscosity of the glass can be reduced by means of the mixed alkaline earth effect, the migration transition of cations in the glass is reduced, and the effect of inhibiting glass crystallization is achieved.
Sb2O3Can effectively reduce the clarification temperature of the glass, improve the uniformity of the glass and improve the transparency of the glassExcess, Sb in the invention2O3The content of (B) is 0 to 0.1 mol%, preferably 0.04 to 0.07 mol%.
The preparation method of the glass material comprises the following steps: selecting a glass formula, weighing the raw materials according to the mol percentage of the components, fully mixing, adding into a platinum crucible, melting at 1580-1650 ℃, and cooling after atmosphere control, clarification and homogenization; pouring the molten glass into a metal mold preheated to about 400 ℃ for molding, and introducing circulating cooling air to ensure that the glass does not crystallize; and putting the formed glass and the metal mold into an annealing furnace for heat preservation and annealing, and then cooling along with the furnace after power failure to obtain the glass.
The properties of the glass of the present invention will be described below.
< transmittance >
The transmittance of the glass was measured according to the following method:
the glass is made into a sample with the thickness of 2mm +/-0.1 mm, and the transmittance T of the glass at 400nm is tested400nm. The test method is based on the national standard: colorless optical glass test method part 12: in-spectrum transmittance; standard numbering: GB/T7962.12-2010.
In some embodiments, T of the glasses of the invention400nmNot less than 83%, preferably T400nm≥92％。
<Dielectric constant εr>
Dielectric constant ε of glassrAccording to the national standard: the method for testing the microwave complex dielectric constant of the solid electrolyte adopts an open cavity method; standard numbering: GB/T7265.2-1987.
In some embodiments, epsilon of the glasses of the inventionr(@1GHz) is 3.7 to 5.83, preferably εr(1@ GHz) is 3.7 to 4.87.
< coefficient of linear expansion α >
Linear expansion coefficient alpha (20-120 deg.C, 10) of glass-7The test method is according to the national standard: colorless optical glass test method part 16: linear expansion coefficient, transition temperature and sag temperature; standard numbering: GB/T7962.16-2010.
In some embodiments, the glass of the present invention has an alpha(20℃-120℃)34.5 to 40 x 10-7K, preferably alpha(20℃-120℃)Is 35 to 39 x 10-7/k。
< volume resistivity ρ >
The volume resistivity rho (omega. cm) test method of glass is in accordance with the national standard: volume surface resistivity test method; standard number GB/T1410-2006
In some embodiments, the glass of the present invention has a ρ of 1.1 × 1010Ω.cm～9.5×1013Ω. cm, preferably ρ 7.6 × 1010Ω.cm～9.3×1012Ω.cm。
Examples
In order to further clarify the explanation and explanation of the technical solution of the present invention, the following non-limiting examples are provided. Many efforts have been made to ensure accuracy with respect to numbers in the embodiments of the invention, but some errors and deviations should be accounted for.
In examples 1 to 16, glass compositions having the compositions shown in tables 1 to 2 were obtained by the above-mentioned glass production method, and the properties of the glasses were measured by the above-mentioned measurement method. The molar percentage composition and transmittance T of the glass are given in tables 1-2400nmDielectric constant εr(@1GHz), coefficient of linear expansion alpha (20 ℃ -120 ℃ C., 10)-7K), volume resistivity ρ (Ω. cm).
TABLE 1
TABLE 2
Claims (20)
1. A low dielectric constant glass composition characterized by comprising, in mole percent: SiO 22 64.8～68.2mol％；B2O3 23.9～28.8mol％；R2O2.5-6.51 mol%; wherein, R is2O is Li2O、Na2O and K2One or more of O, and the glass linear expansion coefficient alpha at 20-120 ℃ is 34.5-40 multiplied by 10-7/k，(SiO2+Al2O3+B2O3)/(R2O + MO) is 9.28-21, and MO is one or two of BaO and SrO.
2. The low dielectric constant glass composition of claim 1, further comprising, in mole percent: al (Al)2O3 0～3.1mol％；MO 0～5mol％；Sb2O30-0.1 mol%, wherein MO is one or two of BaO and SrO.
3. A low dielectric constant glass composition characterized in that its composition, expressed in mole percent, is represented by SiO2 64.8～68.2mol％；B2O3 23.9～28.8mol％；R2O 2.5～6.51mol％；Al2O3 0～3.1mol％；MO 0～3.4mol％；Sb2O30 to 0.1 mol%, wherein R is2O is Li2O、Na2O and K2One or more of O, MO is one or two of BaO and SrO, (SiO)2+Al2O3+B2O3)/(R2O + MO) is 9.28 to 21.
4. A low dielectric constant glass composition according to claim 1, 2 or 3, wherein the components are expressed in mole percent, wherein: SiO 2265-67 mol; and/or B2O3 25～28.5 mol%; and/or Al2O30.5-2.5 mol%; and/or R2O2.5-6 mol%; and/or MO 0-2.1 mol%; and/or Sb2O3 0.04～0.07mol％。
5. A low dielectric constant glass composition according to claim 1, 2 or 3, wherein the components are expressed in mole percent, wherein: MO 0-1.5 mol%.
6. A low dielectric constant glass composition according to claim 1, 2 or 3, wherein the components are expressed in mole percent, wherein: SiO 22+B2O3Is 90 to 96.41 mol%.
7. A low dielectric constant glass composition according to claim 1, 2 or 3, wherein the components are expressed in mole percent, wherein: SiO 22+B2O3Is 90 to 95 mol%.
8. A low dielectric constant glass composition according to claim 1, 2 or 3, wherein the components are expressed in mole percent, wherein: (SiO)2+Al2O3)/(R2O+B2O3) Is 1.98-2.38.
9. A low dielectric constant glass composition according to claim 1, 2 or 3, wherein the components are expressed in mole percent, wherein: (SiO)2+Al2O3)/(R2O+B2O3) 2 to 2.3.
10. A low dielectric constant glass composition according to claim 1, 2 or 3, wherein the components are expressed in mole percent, wherein: (SiO)2+Al2O3+B2O3)/(R2O + MO) is 12 to 21.
11. A low dielectric constant glass composition according to claim 1, 2 or 3, wherein the components are expressed in mole percent, wherein: (SiO)2+Al2O3+B2O3)/(R2O + MO) is 12 to 19.41.
12. A low dielectric constant glass composition according to claim 1, 2 or 3, wherein the components are expressed in mole percent, wherein: (SiO)2+Al2O3+B2O3)/(R2O + MO) is 12 to 18.11.
13. A low dielectric constant glass composition according to claim 1, 2 or 3, wherein the components are expressed in mole percent, wherein: (SiO)2+Al2O3+B2O3)/(R2O + MO) is 12 to 16.26.
14. A low dielectric constant glass composition according to claim 1, 2 or 3, wherein the components are expressed in mole percent, wherein: li2O 0.1～4.19mol％；Na2O 0～2.06mol％；K2O 0～3.49mol％。
15. A low dielectric constant glass composition according to claim 1, 2 or 3, characterized in that it does not contain CaO; and/or does not contain PbO.
16. The low dielectric constant glass composition of claim 1, 2 or 3, wherein the glass material T is400nmMore than or equal to 83 percent; and/or epsilonr3.7 to 5.83; and/or the linear expansion coefficient alpha of the glass at 20-120 ℃ is 34.5-40 multiplied by 10-7K is; and/or p is 1.1 × 1010Ω· cm～9.5×1013Ω· cm。
17. The low dielectric constant glass composition of claim 1, 2, or 3, wherein the low dielectric constant glass composition is a glass composition comprising a glass having a high dielectric constant and a low dielectric constantGlass material T400nmMore than or equal to 92 percent; and/or epsilonr3.7 to 4.87; and/or the linear expansion coefficient alpha of the glass at 20-120 ℃ is 35-39 multiplied by 10-7K is; and/or p is 7.6 × 1010Ω· cm～9.3×1012Ω· cm。
18. An encapsulating material comprising the low dielectric constant glass composition according to any one of claims 1 to 17.
19. A interposer material comprising the low dielectric constant glass composition according to any one of claims 1 to 17.
20. A microchannel plate material comprising the low dielectric constant glass composition of any of claims 1 to 17.
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