CN113272935B - 用于等离子体处理室的斐波那契线圈 - Google Patents
用于等离子体处理室的斐波那契线圈 Download PDFInfo
- Publication number
- CN113272935B CN113272935B CN202080008359.7A CN202080008359A CN113272935B CN 113272935 B CN113272935 B CN 113272935B CN 202080008359 A CN202080008359 A CN 202080008359A CN 113272935 B CN113272935 B CN 113272935B
- Authority
- CN
- China
- Prior art keywords
- coil
- legs
- fibonacci
- dielectric window
- process chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000012545 processing Methods 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 132
- 230000008569 process Effects 0.000 claims abstract description 127
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000004065 semiconductor Substances 0.000 claims abstract description 34
- 238000009616 inductively coupled plasma Methods 0.000 claims abstract description 29
- 239000007789 gas Substances 0.000 claims description 56
- 239000003990 capacitor Substances 0.000 claims description 48
- 230000004044 response Effects 0.000 claims description 4
- 238000013461 design Methods 0.000 description 30
- 235000012431 wafers Nutrition 0.000 description 15
- 238000005530 etching Methods 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- 238000009826 distribution Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- -1 oxides Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962790191P | 2019-01-09 | 2019-01-09 | |
| US62/790,191 | 2019-01-09 | ||
| PCT/US2020/012076 WO2020146189A1 (en) | 2019-01-09 | 2020-01-02 | Fibonacci coil for plasma processing chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113272935A CN113272935A (zh) | 2021-08-17 |
| CN113272935B true CN113272935B (zh) | 2024-02-02 |
Family
ID=71521408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080008359.7A Active CN113272935B (zh) | 2019-01-09 | 2020-01-02 | 用于等离子体处理室的斐波那契线圈 |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20210102989A (ko) |
| CN (1) | CN113272935B (ko) |
| WO (1) | WO2020146189A1 (ko) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101040366A (zh) * | 2004-10-13 | 2007-09-19 | 自适应等离子体技术公司 | 用于等离子体室中的均匀等离子体分布的等离子体源 |
| CN105993069A (zh) * | 2014-02-12 | 2016-10-05 | 艾克塞利斯科技公司 | 用于多功能静电夹钳操作的可变电极图案 |
| CN106906453A (zh) * | 2015-12-14 | 2017-06-30 | 朗姆研究公司 | 喷头组件 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7691243B2 (en) * | 2004-06-22 | 2010-04-06 | Tokyo Electron Limited | Internal antennae for plasma processing with metal plasma |
| US10170279B2 (en) * | 2012-07-20 | 2019-01-01 | Applied Materials, Inc. | Multiple coil inductively coupled plasma source with offset frequencies and double-walled shielding |
| KR102334378B1 (ko) * | 2015-09-23 | 2021-12-02 | 삼성전자 주식회사 | 유전체 윈도우, 그 윈도우를 포함한 플라즈마 공정 시스템, 및 그 시스템을 이용한 반도체 소자 제조방법 |
-
2020
- 2020-01-02 WO PCT/US2020/012076 patent/WO2020146189A1/en active Application Filing
- 2020-01-02 CN CN202080008359.7A patent/CN113272935B/zh active Active
- 2020-01-02 KR KR1020217024940A patent/KR20210102989A/ko unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101040366A (zh) * | 2004-10-13 | 2007-09-19 | 自适应等离子体技术公司 | 用于等离子体室中的均匀等离子体分布的等离子体源 |
| CN105993069A (zh) * | 2014-02-12 | 2016-10-05 | 艾克塞利斯科技公司 | 用于多功能静电夹钳操作的可变电极图案 |
| CN106906453A (zh) * | 2015-12-14 | 2017-06-30 | 朗姆研究公司 | 喷头组件 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020146189A1 (en) | 2020-07-16 |
| KR20210102989A (ko) | 2021-08-20 |
| CN113272935A (zh) | 2021-08-17 |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |