CN113271082A - Piezoelectric quartz wafer with Gaussian electrode structure and manufacturing process thereof - Google Patents
Piezoelectric quartz wafer with Gaussian electrode structure and manufacturing process thereof Download PDFInfo
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- CN113271082A CN113271082A CN202110689183.2A CN202110689183A CN113271082A CN 113271082 A CN113271082 A CN 113271082A CN 202110689183 A CN202110689183 A CN 202110689183A CN 113271082 A CN113271082 A CN 113271082A
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- quartz substrate
- connecting part
- quartz
- gaussian
- lower electrode
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- 239000010453 quartz Substances 0.000 title claims abstract description 115
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 115
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 239000013078 crystal Substances 0.000 claims abstract description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 238000001020 plasma etching Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 230000001788 irregular Effects 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 29
- 238000013461 design Methods 0.000 description 3
- 238000010008 shearing Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
Abstract
A piezoelectric quartz wafer with a Gaussian electrode structure comprises a quartz substrate, wherein the quartz substrate is circular, an upper electrode and an upper electrode connecting part are arranged on the front surface of the quartz substrate, a lower electrode and a lower electrode connecting part are arranged on the back surface of the quartz substrate, the upper electrode is Gaussian-shaped, the lower electrode is circular, the projection area of the upper electrode on the quartz substrate and the projection area of the lower electrode are symmetrically distributed on the upper surface and the lower surface of the quartz substrate, the upper electrode connecting part and the lower electrode connecting part are distributed on two sides of the circle center of the quartz substrate, and the center lines of the upper electrode connecting part and the lower electrode connecting part are located on the same diameter of the quartz substrate. The invention also provides a manufacturing process of the piezoelectric quartz crystal wafer with the Gaussian electrode structure.
Description
Technical Field
The invention relates to the technical field of piezoelectric quartz wafer structures, in particular to a piezoelectric quartz wafer with a Gaussian electrode structure and a manufacturing process thereof.
Background
At present, a quartz crystal resonator is generally composed of a piezoelectric quartz crystal wafer and a package, wherein the piezoelectric quartz crystal wafer is mostly of a rectangular flat plate structure, and the package is mostly made of metal or ceramic. The upper and lower surfaces of the piezoelectric quartz wafer need to be evaporated or sputtered with electrodes and are connected with the base pins in the packaging shell. The alternating voltage can be communicated with the upper electrode and the lower electrode of the quartz wafer through the pins, so that the quartz wafer generates an inverse piezoelectric effect, and oscillation is generated. The quartz crystal resonator is widely applied to electronic industries such as mobile electronic equipment, communication devices and the like due to the accuracy and stability of the frequency of the quartz crystal resonator.
With the rapid development of mobile communication electronics, the demand for miniaturization of devices is higher and higher, and the miniaturization of quartz crystal resonators is also imperative. When the small-diameter electrode is deposited on the surface of the flat quartz crystal, the vibration of the thickness shearing mode is easy to be coupled with other vibration modes. Since florisin in 1926 discovered that beveled disk structure wafers can reduce the generation of vibration coupling phenomena, this method has been used extensively in the design of various quartz resonator wafer structures. However, with the development of miniaturization of quartz resonators, the required wafer size is smaller and smaller, the difficulty in realizing the bevel edge structure is higher and higher, and the requirements of the current market on the processing and manufacturing and performance parameters of the resonators cannot be completely met.
Disclosure of Invention
Accordingly, the present invention is directed to overcome the disadvantages of the prior art, and provides a piezoelectric quartz wafer having a gaussian electrode structure, which can be used for mass production of small-sized quartz wafers and can greatly improve the resonance performance of a resonator by using the energy-trapping principle, and a manufacturing process thereof.
The purpose of the invention is realized by the following technical scheme: a piezoelectric quartz crystal wafer with a Gaussian electrode structure comprises a quartz substrate, wherein the quartz substrate is circular, and the piezoelectric quartz crystal wafer is characterized in that: the quartz substrate comprises a quartz substrate, and is characterized in that an upper electrode and an upper electrode connecting part are arranged on the front surface of the quartz substrate, a lower electrode and a lower electrode connecting part are arranged on the back surface of the quartz substrate, the upper electrode is Gaussian-shaped, the lower electrode is circular, the projection area of the upper electrode on the quartz substrate and the lower electrode are symmetrically distributed on the upper surface and the lower surface of the quartz substrate, the upper electrode connecting part and the lower electrode connecting part are distributed on two sides of the circle center of the quartz substrate, and the center lines of the upper electrode connecting part and the lower electrode connecting part are located on the same diameter of the quartz substrate.
The upper electrode connecting part and the lower electrode connecting part are both in irregular patterns consisting of two sections of circular arcs and two straight-line sections, two ends of the upper electrode connecting part are respectively connected with the upper electrode and the edge of the quartz substrate, and two ends of the lower electrode connecting part are respectively connected with the lower electrode and the edge of the quartz substrate.
The diameter of the piezoelectric quartz wafer is 1-20 mm.
The thickness of the piezoelectric quartz wafer is 80-400 mu m.
The quartz substrate is made of quartz, and the upper electrode, the upper electrode connecting part, the lower electrode and the lower electrode connecting part are made of gold.
A manufacturing process of a piezoelectric quartz wafer with a Gaussian electrode structure is characterized in that: the method comprises the following steps:
s1, taking out a quartz substrate with a certain specification, and grinding and polishing the upper surface and the lower surface of the quartz substrate;
s2, coating photoresist on the center of the upper surface of the quartz substrate, and adjusting the photoresist profile of the upper surface of the quartz substrate into a lens shape through photoresist backflow;
s3, selectively etching the quartz substrate for multiple times through Reactive Ion Etching (RIE), and finally forming the photoresist coating area into a Gaussian shape;
s4, cleaning the formed quartz substrate, and respectively sputtering or evaporating a chromium adhesion layer and a gold adhesion layer by radio frequency sputtering or evaporation and other modes to form an upper electrode, an upper electrode connecting part, a lower electrode and a lower electrode connecting part;
and S5, cleaning the surface of the quartz substrate to obtain the piezoelectric quartz wafer with the Gaussian electrode structure.
The invention has the following beneficial effects:
1. the invention designs a Gaussian three-dimensional structure on the circular wafer by utilizing the energy trap theory, thereby greatly reducing the coupling generation of the thickness shearing vibration mode and other vibration modes and improving the resonance performance of the resonator.
2. The invention realizes the structural design of the Gaussian three-dimensional quartz wafer by utilizing the Reactive Ion Etching (RIE) process, and the mass distribution of the quartz substrate in the electrode area is matched with the distribution of the thickness shearing vibration, so that the energy trap effect of the quartz substrate is greatly improved, and the resonance performance of the resonator is improved.
3. The invention bypasses the characteristics of poor stability and low repeatability of the traditional edge-to-edge process in the manufacturing process of the small-size quartz wafer, greatly improves the manufacturing efficiency of the wafer and simultaneously improves the consistency.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a top view of FIG. 1;
FIG. 3 is a cross-sectional view E-E of FIG. 2;
FIG. 4 is a bottom view of FIG. 1;
FIG. 5 is a flow chart of a manufacturing process for forming a quartz wafer according to one embodiment of the present invention.
In the figure, a quartz substrate 1, an upper electrode 2, a lower electrode 3, an upper electrode connecting portion 4, and a lower electrode connecting portion 5 are shown.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The first embodiment is as follows:
as shown in fig. 1 to 4, a piezoelectric quartz wafer with a gaussian electrode structure includes a quartz substrate 1, an upper electrode 2, an upper electrode connecting portion 3, a lower electrode 4, and a lower electrode connecting portion 5, wherein a projection area of the upper electrode 2 on the quartz substrate 1 and the lower electrode 4 are symmetrically distributed on upper and lower sides of the quartz substrate 1, the upper electrode connecting portion 3 and the lower electrode connecting portion 5 are distributed on two sides of a circle center of the quartz substrate 1, and center lines thereof are located on a same diameter of the quartz substrate 1.
The quartz substrate 1 is circular. The upper electrode 2 is Gaussian-shaped, the lower electrode 4 is circular, and the projection area of the upper electrode 2 on the quartz substrate 1 and the lower electrode 4 are symmetrically distributed on the upper side and the lower side of the quartz substrate 1. The upper electrode connecting part 3 and the lower electrode connecting part 5 are both in irregular patterns consisting of two sections of circular arcs and two straight-line sections, the upper electrode connecting part 3 and the lower electrode connecting part 5 are distributed on two sides of the circle center of the quartz substrate 1, and the center lines of the upper electrode connecting part 3 and the lower electrode connecting part 5 are located on the same diameter of the quartz substrate 1.
The diameter of the piezoelectric quartz wafer is 1-20 mm, and the diameter in the embodiment is 1.5 mm. The thickness of the piezoelectric quartz wafer is 80-400 μm, and the thickness in the embodiment is 120 μm.
The quartz substrate 1 is made of quartz, and the upper electrode 2, the upper electrode connecting part 3, the lower electrode 4 and the lower electrode connecting part 5 are made of gold.
As shown in fig. 5, a process for manufacturing a piezoelectric quartz wafer having a gaussian electrode structure comprises the following steps:
s1, taking out a quartz substrate with a certain specification, and grinding and polishing the upper surface and the lower surface of the quartz substrate;
s2, coating photoresist on the center of the upper surface of the quartz substrate, and adjusting the photoresist profile of the upper surface of the quartz substrate into a lens shape through photoresist backflow;
s3, selectively etching the quartz substrate for multiple times through Reactive Ion Etching (RIE), and finally forming the photoresist coating area into a Gaussian shape;
s4, cleaning the molded quartz substrate, and sputtering or evaporating a chromium adhesion layer and a gold adhesion layer by radio frequency sputtering or evaporation to form an upper electrode 2, an upper electrode connecting part 3, a lower electrode 4, and a lower electrode connecting part 5;
and S5, cleaning the surface of the quartz substrate to obtain the piezoelectric quartz wafer with the Gaussian electrode structure.
The foregoing is illustrative of the preferred embodiments of this invention, and it is to be understood that the invention is not limited to the precise form disclosed herein and that various other combinations, modifications, and environments may be used, and changes may be made within the scope of the inventive concept as expressed herein, commensurate with the above teachings, or the skill or knowledge of the relevant art. And that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (6)
1. A piezoelectric quartz wafer with a gaussian electrode structure, comprising a quartz substrate (1), said quartz substrate (1) being circular, characterized in that: the quartz substrate comprises a quartz substrate (1), and is characterized in that an upper electrode (2) and an upper electrode connecting part (3) are arranged on the front surface of the quartz substrate (1), a lower electrode (4) and a lower electrode connecting part (5) are arranged on the back surface of the quartz substrate (1), the upper electrode (2) is Gaussian-shaped, the lower electrode (4) is circular, the projection area of the upper electrode (2) on the quartz substrate (1) and the lower electrode (4) are symmetrically distributed on the upper surface and the lower surface of the quartz substrate (1), the upper electrode connecting part (3) and the lower electrode connecting part (5) are distributed on two sides of the circle center of the quartz substrate (1), and the central lines of the upper electrode connecting part and the lower electrode connecting part are located on the same diameter of the quartz substrate (1).
2. A piezoelectric quartz wafer having a gaussian-shaped electrode structure as defined in claim 1, wherein: the upper electrode connecting part (3) and the lower electrode connecting part (5) are both in irregular patterns consisting of two sections of circular arcs and two straight-line sections, two ends of the upper electrode connecting part (3) are respectively connected with the edges of the upper electrode (2) and the quartz substrate (1), and two ends of the lower electrode connecting part (5) are respectively connected with the edges of the lower electrode (4) and the quartz substrate (1).
3. A piezoelectric quartz wafer having a gaussian-shaped electrode structure as defined in claim 1, wherein: the diameter of the piezoelectric quartz wafer is 1-20 mm.
4. A piezoelectric quartz wafer having a gaussian-shaped electrode structure as defined in claim 1, wherein: the thickness of the piezoelectric quartz wafer is 80-400 mu m.
5. A piezoelectric quartz wafer having a gaussian-shaped electrode structure as defined in claim 1, wherein: the quartz substrate (1) is made of quartz, and the upper electrode (2), the upper electrode connecting part (3), the lower electrode (4) and the lower electrode connecting part (5) are made of gold.
6. A process for manufacturing a piezoelectric quartz crystal wafer having a Gaussian electrode structure as defined in any one of claims 1 to 5, wherein: the method comprises the following steps:
s1, taking out a quartz substrate with a certain specification, and grinding and polishing the upper surface and the lower surface of the quartz substrate;
s2, coating photoresist on the center of the upper surface of the quartz substrate, and adjusting the photoresist profile of the upper surface of the quartz substrate into a lens shape through photoresist backflow;
s3, selectively etching the quartz substrate for multiple times through Reactive Ion Etching (RIE), and finally forming the photoresist coating area into a Gaussian shape;
s4, cleaning the molded quartz substrate, and respectively sputtering or evaporating a chromium adhesion layer and a gold adhesion layer by radio frequency sputtering or evaporation and other modes to form an upper electrode (2), an upper electrode connecting part (3), a lower electrode (4) and a lower electrode connecting part (5);
and S5, cleaning the surface of the quartz substrate to obtain the piezoelectric quartz wafer with the Gaussian electrode structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110689183.2A CN113271082A (en) | 2021-06-22 | 2021-06-22 | Piezoelectric quartz wafer with Gaussian electrode structure and manufacturing process thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110689183.2A CN113271082A (en) | 2021-06-22 | 2021-06-22 | Piezoelectric quartz wafer with Gaussian electrode structure and manufacturing process thereof |
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| CN113271082A true CN113271082A (en) | 2021-08-17 |
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| CN202110689183.2A Pending CN113271082A (en) | 2021-06-22 | 2021-06-22 | Piezoelectric quartz wafer with Gaussian electrode structure and manufacturing process thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3073975A (en) * | 1958-12-23 | 1963-01-15 | Rca Corp | Crystal unit |
| US4375041A (en) * | 1978-12-06 | 1983-02-22 | Matsushita Electric Industrial Co., Ltd. | Terminal substrate for a quartz vibrating device |
| CN105634436A (en) * | 2015-12-22 | 2016-06-01 | 成都泰美克晶体技术有限公司 | Quartz crystal resonator with circular wafer structure and manufacture method thereof |
| CN211127751U (en) * | 2019-11-07 | 2020-07-28 | 福建省将乐县长兴电子有限公司 | Ultrahigh frequency quartz crystal resonator |
-
2021
- 2021-06-22 CN CN202110689183.2A patent/CN113271082A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3073975A (en) * | 1958-12-23 | 1963-01-15 | Rca Corp | Crystal unit |
| US4375041A (en) * | 1978-12-06 | 1983-02-22 | Matsushita Electric Industrial Co., Ltd. | Terminal substrate for a quartz vibrating device |
| CN105634436A (en) * | 2015-12-22 | 2016-06-01 | 成都泰美克晶体技术有限公司 | Quartz crystal resonator with circular wafer structure and manufacture method thereof |
| CN211127751U (en) * | 2019-11-07 | 2020-07-28 | 福建省将乐县长兴电子有限公司 | Ultrahigh frequency quartz crystal resonator |
Non-Patent Citations (2)
| Title |
|---|
| 李科杰: "《新编传感器技术手册》", 31 January 2002, 国防工业出版社 * |
| 杨培根: "《光电惯性技术》", 30 September 1999, 兵器工业出版社 * |
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