CN113270552A - Perovskite solar cell based on 2D-3D-2D light absorption layer and preparation method thereof - Google Patents

Perovskite solar cell based on 2D-3D-2D light absorption layer and preparation method thereof Download PDF

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CN113270552A
CN113270552A CN202110587816.9A CN202110587816A CN113270552A CN 113270552 A CN113270552 A CN 113270552A CN 202110587816 A CN202110587816 A CN 202110587816A CN 113270552 A CN113270552 A CN 113270552A
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于军胜
李嘉文
杨根杰
王子君
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University of Electronic Science and Technology of China
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    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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Abstract

The invention discloses a perovskite solar cell based on a 2D-3D-2D light absorption layer and a preparation method thereof, wherein a transparent substrate, a conductive anode, a hole transmission layer, a two-dimensional perovskite protective layer, a three-dimensional perovskite active layer, a two-dimensional perovskite protective layer, an electron transmission layer, a hole barrier layer and a metal cathode are sequentially arranged from bottom to top, and the layers are sequentially prepared; spin coating PbI on two-dimensional material layer2Excess three-dimensional perovskite precursor, excess PbI after annealing2Will react with the underlying two-dimensional material layer to form a two-dimensional perovskite protective layer, thereby forming a 2D-3D structure. Spin coating two-dimensional material on three-dimensional perovskite again, excessive PbI after annealing2Will react with the two-dimensional material of the upper layer to form a two-dimensional perovskite two-protection layer, thereby forming 2D-3D-2DAnd a light absorbing layer structure. Due to the natural hydrophobicity of the two-dimensional perovskite material, the light absorption layer structure of the 2D-3D-2D enables the stability of the device to be greatly improved.

Description

Perovskite solar cell based on 2D-3D-2D light absorption layer and preparation method thereof
Technical Field
The invention belongs to the technical field of organic photoelectric devices in electronic components, and relates to a perovskite solar cell based on a 2D-3D-2D light absorption layer and a preparation method thereof.
Background
Energy is an important guarantee for the development of human society, and with the rapid development of global economy, the situation of short supply and short demand appears in the utilization of energy in certain regions. From the world, the fossil energy currently developed and utilized on a large scale includes non-renewable energy such as petroleum, coal, natural gas, and the like. The reserves of these fossil energy sources are limited. In addition, fossil fuels can cause environmental pollution and greenhouse gas emission during use. In order to fundamentally solve the energy problem and the environmental problem caused by the energy problem, people actively develop and explore clean energy capable of being continuously utilized in recent years. Therefore, people pay more attention to the exploration and development of renewable energy sources, and renewable energy sources such as tidal energy, solar energy, wind energy, ocean energy, geothermal energy and the like gradually come into the visual field of people to replace traditional non-renewable fossil energy sources. The annual global solar energy availability is equivalent to 68 trillion tons of oil, and has great potential for development and utilization. Solar cells may be classified into silicon solar cells, perovskite solar cells, organic solar cells, and the like. The perovskite solar cell has been widely paid attention to and researched due to the advantages of simple manufacturing process, low manufacturing cost, continuous improvement of efficiency and the like.
Although perovskite solar cells are continuously close to silicon cells in photoelectric conversion efficiency, the perovskite solar cells have short service lives. Therefore, studying how to increase the long-term stability of perovskite solar cells is one of the major points of current research in the field of perovskite solar cells.
Disclosure of Invention
The invention aims to: the perovskite solar cell based on the 2D-3D-2D light absorption layer and the preparation method thereof are provided, and the defects of the background art are overcome.
The technical scheme adopted by the invention is as follows:
a perovskite solar cell based on a 2D-3D-2D light absorption layer and a preparation method thereof are sequentially provided with a transparent substrate, a conductive anode, a hole transmission layer, a two-dimensional perovskite protective layer, a three-dimensional perovskite active layer, a two-dimensional perovskite secondary protective layer, an electron transmission layer, a hole barrier layer and a metal cathode from bottom to top, and the layers are sequentially prepared.
Further, the substrate is made of glass or transparent polymer; the transparent polymer comprises one or more of polyethylene, polymethyl methacrylate, polycarbonate, polyurethane, polyimide, vinyl chloride-vinyl acetate resin or polyacrylic acid.
Further, the conductive anode adopts any one or combination of more of indium tin oxide, graphene or carbon nano tubes.
Further, TAPC is used as the hole transport layer material, and the thickness of the film is 15-20 nm.
Furthermore, the two-dimensional perovskite protective layer and the two-dimensional perovskite protective layer both use two-dimensional perovskite precursor materials, and the thickness of the film is 0.1-10 nm.
Further, the two-dimensional perovskite precursor material includes, but is not limited to, PEAI, PEABr, PEACl, BAI, BZABr.
Furthermore, the three-dimensional perovskite photoactive layer is made of MAPbI3, and the thickness of the film is 300-700 nm.
Wherein: the electron transmission layer is made of PCBM, and the thickness of the film is 30-60 nm. The hole blocking layer is made of Bphen, and the thickness of the hole blocking layer is 4-8 nm. The metal cathode is made of one or more of silver, aluminum or copper, and the thickness of the metal cathode is 100-200 nm.
A preparation method of a perovskite solar cell based on a 2D-3D-2D light absorption layer comprises the following steps:
step 1: cleaning and drying the substrate and carrying out UV treatment for 15 minutes;
step 2: spin-coating a cavity transport layer solution on the surface of the substrate, and then annealing to prepare a substrate;
and step 3: spin-coating a two-dimensional perovskite precursor material solution on the surface of a substrate to form a two-dimensional perovskite protective layer;
and 4, step 4: spin-coating a three-dimensional perovskite precursor solution in an isolation environment, namely a dust-free and oxygen-free drying environment, and then carrying out annealing treatment to form a 2D-3D perovskite layer;
and 5: spin-coating a two-dimensional perovskite precursor material solution on the surface of the three-dimensional perovskite again to form a two-dimensional perovskite secondary protection layer, and then carrying out annealing treatment to form a 2D-3D-2D perovskite light absorption layer;
step 6: spin-coating PCBM solution on the perovskite light absorption layer, and then carrying out annealing treatment to prepare an electron transmission layer;
and 7: under the high vacuum environment, a hole blocking layer is evaporated on the electron transport layer, and then a metal cathode is evaporated on the hole blocking layer;
and 8: and after the evaporation is finished, packaging the obtained device in an isolation environment to obtain the perovskite solar cell.
Further, in the step 3, the concentration of the two-dimensional perovskite precursor material solution is 1 mg/ml-20 mg/ml, the spin-coating rotation speed is 5000rpm, the spin-coating time is 30s, the annealing temperature is 100 ℃, and the annealing time is 10 min.
Further, in the step 4, the spin-coating rotation speed is 4000rpm, the spin-coating time is 30s, the annealing temperature is 120 ℃, and the annealing time is 20 min.
Wherein: in the step 1, cleaning the substrate by using a detergent, an acetone solution, deionized water and isopropyl alcohol, and drying by using nitrogen after cleaning; in step 4 and step 8, the isolated environment is a dust-free and oxygen-free dry environment, such as a glove box. In the step 2, the concentration of the TAPC solution is 5mg/ml, the spin-coating rotating speed is 3000rpm, the spin-coating time is 40s, the annealing temperature is 120 ℃, and the annealing time is 15 min. In the step 5, the concentration of the two-dimensional perovskite precursor material solution is 1 mg/ml-20 mg/ml, the spin-coating rotation speed is 5000rpm, the spin-coating time is 30s, the annealing temperature is 100 ℃, and the annealing time is 10 min. In step 6, the concentration of the PCBM solution is 20mg/mL, the spin-coating rotation speed is 1900rpm, the spin-coating time is 45s, the annealing temperature is 110 ℃, and the annealing time is 15 min. In step 7, the evaporation process is carried out under the conditions of heating under high vacuum (3 × 10-4Pa), the evaporation thickness of the hole blocking layer is 4-8 nm, and the evaporation thickness of the metal cathode is 100-200 nm.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
1. spin coating PbI on two-dimensional material layer2Excess three-dimensional perovskite precursor, excess PbI after annealing2Will react with the underlying two-dimensional material layer to form a two-dimensional perovskite protective layer, thereby forming a 2D-3D structure. Spin coating two-dimensional material (PEAI, PEABr, PEACl, BAI, BZABr, etc.) on the three-dimensional perovskite again, annealing and then excessive PbI2Will react with the two-dimensional material of the upper layer to form a two-dimensional perovskite two-protection layer, thereby forming a light absorption layer structure of 2D-3D-2D.
Due to the natural hydrophobicity of the two-dimensional perovskite material, the light absorption layer structure of the 2D-3D-2D enables the stability of the device to be greatly improved.
2. Meanwhile, the two-dimensional perovskite protective layer/the two-dimensional perovskite protective layer can passivate the surface of the three-dimensional perovskite, so that the performance of the device is improved.
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In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and that for those skilled in the art, other relevant drawings can be obtained according to the drawings without inventive effort, wherein:
FIG. 1 is a schematic structural diagram of a perovskite solar cell based on a 2D-3D-2D light absorbing layer;
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the detailed description and specific examples, while indicating the preferred embodiment of the invention, are intended for purposes of illustration only and are not intended to limit the scope of the invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
It is noted that relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The features and properties of the present invention are described in further detail below with reference to examples.
With reference to fig. 1, the specially doped perovskite solar cell of the present invention has the following structure, from bottom to top: the device comprises a substrate, a conductive anode, a hole transport layer, a two-dimensional perovskite protective layer, a three-dimensional perovskite optical active layer, a two-dimensional perovskite protective layer, an electron transport layer, a hole blocking layer and a metal cathode.
The substrate is made of glass or transparent polymer, and the transparent polymer comprises one or more of polyethylene, polymethyl methacrylate, polycarbonate, polyurethane, polyimide, vinyl chloride-vinyl acetate resin or polyacrylic acid; the conductive anode is made of any one or a combination of Indium Tin Oxide (ITO), Graphene (Graphene) or Carbon nano tubes (Carbon nanotubes); the hole transport layerThe material is TAPC, and the thickness is 15-20 nm; the two-dimensional perovskite protective layer and the two-dimensional perovskite secondary protective layer can use two-dimensional perovskite precursor materials (PEAI, PEABr, PEACl, BAI, BZABr and the like), and the thickness of the film is 0.1-10 nm; the three-dimensional perovskite layer is MAPbI3The thickness is 300-700 nm; the thickness of the film is 0.1-10 nm; the electron transport material is PCBM, and the thickness of the electron transport material is 30-60 nm; the hole blocking layer is made of Bphen, and the thickness of the hole blocking layer is 5-10 nm; the metal cathode material comprises one or more of silver, aluminum or copper, and the thickness of the metal cathode material is 100-200 nm.
The following are specific embodiments of the present invention:
control group
Cleaning a substrate consisting of a substrate and a transparent conductive anode ITO, and drying the substrate by using nitrogen after cleaning; coating TAPC (spin coating speed is 3000rpm, spin coating time is 40s, thickness is 15nm) on the surface of the transparent conductive anode ITO in a rotating mode to prepare a hole transport layer, and carrying out thermal annealing on the formed film (annealing temperature is 120 ℃, and annealing time is 15 min); spin coating MAPbI on hole transport layer3Preparing a perovskite layer by using a precursor solution (DMF is used as a solvent to form a mixed solution with a solute concentration of 500mg/mL by mixing, the spin-coating rotation speed is 4000rpm, the spin-coating time is 25s, and the thickness is 500nm), firstly, rotating a wafer at the rotation speed of 4000rpm, then, dripping the perovskite precursor solution, then, quickly dripping a chlorobenzene solution on a perovskite activated carbon layer to inhibit disordered crystallization of perovskite, and then, annealing at the temperature of 120 ℃ for 20 min; the surface of the perovskite light active layer is coated with PCBM solution in a rotating mode (mixed solution with chlorobenzene as a solvent to form 20mg/mL of solute is used, the rotating speed of the spin coating is 1900rpm, the time of the spin coating is 45s, and the thickness is 50nm) to prepare an electron transmission layer, a hole blocking layer Bphen (5nm) is prepared through evaporation, and a metal anode Ag (100nm) is evaporated on the hole blocking layer. Under standard test conditions: the open-circuit voltage of the device is 0.86V, and the short-circuit current density is 21.92mA/cm2The fill factor was 64.60%, and the photoelectric conversion efficiency was 12.23%.
Group of embodiments
Example 1:
cleaning a substrate consisting of a substrate and a transparent conductive anode ITO, and drying the substrate by using nitrogen after cleaning; coating TAPC (spin coating speed is 3000rpm, spin coating time is 40s, thickness is 15nm) on the surface of the transparent conductive anode ITO in a rotating mode to prepare a hole transport layer, and carrying out thermal annealing on the formed film (annealing temperature is 120 ℃, and annealing time is 15 min);
spin-coating a two-dimensional perovskite precursor material PEAI (the solution concentration is 5mg/ml, the spin-coating rotation speed is 5000rpm, the spin-coating time is 30s) on the hole transport layer, and annealing (the annealing temperature is 100 ℃, and the annealing time is 10 min); spin coating PbI on two-dimensional perovskite precursor material layer2Excess MAPbI3Preparing a perovskite layer by using a precursor solution (DMF is used as a solvent to form a mixed solution with a solute concentration of 500mg/mL by mixing, the spin-coating rotation speed is 4000rpm, the spin-coating time is 25s, and the thickness is 500nm), firstly, rotating a wafer at the rotation speed of 4000rpm, then, dripping the perovskite precursor solution, then, quickly dripping a chlorobenzene solution on a perovskite activated carbon layer to inhibit disordered crystallization of perovskite, then, annealing at the temperature of 120 ℃ for 20min, and excessively adding PbI2Reacting with a lower two-dimensional perovskite precursor material PEAI to form a two-dimensional perovskite protective layer;
spin-coating two-dimensional perovskite precursor material PEAI (solution concentration is 5mg/ml, spin-coating rotation speed is 5000rpm, spin-coating time is 30s) on the surface of the three-dimensional perovskite photoactive layer, and annealing (annealing temperature is 100 ℃, annealing time is 10min) is carried out to excess PbI2Reacts with the two-dimensional perovskite precursor material PEAI on the upper layer to form a two-dimensional perovskite secondary protective layer,
thereby forming a 2D-3D-2D perovskite light absorption layer structure; the surface of the 2D-3D-2D perovskite light absorption layer is coated with PCBM solution (mixed solution with chlorobenzene as solvent to form 20mg/mL solute is used, the spin-coating rotation speed is 1900rpm, the spin-coating time is 45s, and the thickness is 50nm) in a rotating mode to prepare an electron transmission layer, a hole blocking layer Bphen (5nm) is prepared through evaporation, and a metal anode Ag (100nm) is evaporated on the hole blocking layer. Under standard test conditions: the open-circuit voltage of the device is 0.98V, and the short-circuit current density is 15.77mA/cm2The fill factor was 65.30%, and the photoelectric conversion efficiency was 10.14%.
Example 2:
cleaning a substrate consisting of a substrate and a transparent conductive anode ITO, and drying the substrate by using nitrogen after cleaning; coating TAPC (spin coating speed is 3000rpm, spin coating time is 40s, thickness is 15nm) on the surface of the transparent conductive anode ITO in a rotating mode to prepare a hole transport layer, and carrying out thermal annealing on the formed film (annealing temperature is 120 ℃, and annealing time is 15 min);
spin-coating a two-dimensional perovskite precursor material PEABr (the solution concentration is 5mg/ml, the spin-coating rotation speed is 5000rpm, and the spin-coating time is 30s) on the hole transport layer, and annealing (the annealing temperature is 100 ℃ and the annealing time is 10 min); spin coating PbI on two-dimensional perovskite precursor material layer2Excess MAPbI3Preparing a perovskite layer by using a precursor solution (DMF is used as a solvent to form a mixed solution with a solute concentration of 500mg/mL by mixing, the spin-coating rotation speed is 4000rpm, the spin-coating time is 25s, and the thickness is 500nm), firstly, rotating a wafer at the rotation speed of 4000rpm, then, dripping the perovskite precursor solution, then, quickly dripping a chlorobenzene solution on a perovskite activated carbon layer to inhibit disordered crystallization of perovskite, then, annealing at the temperature of 120 ℃ for 20min, and excessively adding PbI2Reacting with a lower two-dimensional perovskite precursor material PEABr to form a two-dimensional perovskite protective layer;
spin-coating two-dimensional perovskite precursor material PEABr (solution concentration is 5mg/ml, spin-coating rotation speed is 5000rpm, spin-coating time is 30s) on the surface of the three-dimensional perovskite photoactive layer, and annealing (annealing temperature is 100 ℃, annealing time is 10min) is carried out to excess PbI2Reacts with the two-dimensional perovskite precursor material PEABr on the upper layer to form a two-dimensional perovskite secondary protective layer,
thereby forming a 2D-3D-2D perovskite light absorption layer structure; the surface of the 2D-3D-2D perovskite light absorption layer is coated with PCBM solution (mixed solution with chlorobenzene as solvent to form 20mg/mL solute is used, the spin-coating rotation speed is 1900rpm, the spin-coating time is 45s, and the thickness is 50nm) in a rotating mode to prepare an electron transmission layer, a hole blocking layer Bphen (5nm) is prepared through evaporation, and a metal anode Ag (100nm) is evaporated on the hole blocking layer. Under standard test conditions: the open-circuit voltage of the device is 1.05V, and the short-circuit current density is 18.59mA/cm2The fill factor was 66.35%, and the photoelectric conversion efficiency was 12.99%.
Example 3:
cleaning a substrate consisting of a substrate and a transparent conductive anode ITO, and drying the substrate by using nitrogen after cleaning; coating TAPC (spin coating speed is 3000rpm, spin coating time is 40s, thickness is 15nm) on the surface of the transparent conductive anode ITO in a rotating mode to prepare a hole transport layer, and carrying out thermal annealing on the formed film (annealing temperature is 120 ℃, and annealing time is 15 min);
spin-coating a two-dimensional perovskite precursor material PEACl (the solution concentration is 5mg/ml, the spin-coating rotation speed is 5000rpm, and the spin-coating time is 30s) on the hole transport layer, and annealing (the annealing temperature is 100 ℃ and the annealing time is 10 min); spin coating PbI on two-dimensional perovskite precursor material layer2Excess MAPbI3Preparing a perovskite layer by using a precursor solution (DMF is used as a solvent to form a mixed solution with a solute concentration of 500mg/mL by mixing, the spin-coating rotation speed is 4000rpm, the spin-coating time is 25s, and the thickness is 500nm), firstly, rotating a wafer at the rotation speed of 4000rpm, then, dripping the perovskite precursor solution, then, quickly dripping a chlorobenzene solution on a perovskite activated carbon layer to inhibit disordered crystallization of perovskite, then, annealing at the temperature of 120 ℃ for 20min, and excessively adding PbI2Reacting with a lower two-dimensional perovskite precursor material PEACl to form a two-dimensional perovskite protective layer;
spin-coating two-dimensional perovskite precursor material PEACl (solution concentration is 5mg/ml, spin-coating rotation speed is 5000rpm, spin-coating time is 30s) on the surface of the three-dimensional perovskite photoactive layer, and annealing (annealing temperature is 100 ℃, annealing time is 10min) is carried out to excess PbI2Reacts with the two-dimensional perovskite precursor material PEACl on the upper layer to form a two-dimensional perovskite secondary protective layer,
thereby forming a 2D-3D-2D perovskite light absorption layer structure; the surface of the 2D-3D-2D perovskite light absorption layer is coated with PCBM solution (mixed solution with chlorobenzene as solvent to form 20mg/mL solute is used, the spin-coating rotation speed is 1900rpm, the spin-coating time is 45s, and the thickness is 50nm) in a rotating mode to prepare an electron transmission layer, a hole blocking layer Bphen (5nm) is prepared through evaporation, and a metal anode Ag (100nm) is evaporated on the hole blocking layer. Under standard test conditions: the open-circuit voltage of the device is 1.05V, and the short-circuit current density is 19.13mA/cm2Fill factor71.50%, the photoelectric conversion efficiency was 14.34%. Test data table 1 is shown below:
TABLE 1
Figure BDA0003088044450000061
Stability test data (normalized) table 2 is shown below:
TABLE 2
Figure BDA0003088044450000071
As can be seen from table 1, since the control group used the conventional manufacturing method of the perovskite solar cell, there were many defects at the upper and lower surfaces of the perovskite layer, the photoelectric conversion efficiency of which was lower than that of examples 2 and 3 using the perovskite solar cell manufactured by the special doping method. Experiments fully prove that the open-circuit voltage and the photoelectric conversion efficiency of the device can be effectively improved by the method for forming the 2D-3D-2D perovskite light absorption layer.
Meanwhile, as shown in table 2, the two-dimensional perovskites on the upper and lower surfaces of the three-dimensional perovskite can protect the three-dimensional perovskite from being corroded by external water and oxygen, so that the long-term stability of the device is improved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and should not be taken as limiting the scope of the present invention, and any modifications, equivalents and improvements made by those skilled in the art within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims (10)

1. A perovskite solar cell based on a 2D-3D-2D light absorption layer is characterized in that: the composite material comprises a transparent substrate, a conductive anode, a hole transport layer, a two-dimensional perovskite protective layer, a three-dimensional perovskite active layer, a two-dimensional perovskite protective layer, an electron transport layer, a hole blocking layer and a metal cathode from bottom to top in sequence, wherein the layers are prepared in sequence.
2. A 2D-3D-2D light absorbing layer based perovskite solar cell according to claim 1, characterized in that: the substrate is made of glass or transparent polymer; the transparent polymer comprises one or more of polyethylene, polymethyl methacrylate, polycarbonate, polyurethane, polyimide, vinyl chloride-vinyl acetate resin or polyacrylic acid.
3. A 2D-3D-2D light absorbing layer based perovskite solar cell according to claim 1, characterized in that: the conductive anode is made of any one or a combination of more of indium tin oxide, graphene or carbon nanotubes.
4. A 2D-3D-2D light absorbing layer based perovskite solar cell according to claim 1, characterized in that: TAPC is used as a hole transport layer material, and the thickness of the film is 15-20 nm.
5. A 2D-3D-2D light absorbing layer based perovskite solar cell according to claim 1, characterized in that: the two-dimensional perovskite protective layer and the two-dimensional perovskite protective layer both use two-dimensional perovskite precursor materials, and the thickness of the film is 0.1-10 nm.
6. The perovskite solar cell based on the 2D-3D-2D light absorption layer according to claim 5, wherein: the two-dimensional perovskite precursor material includes, but is not limited to, PEAI, PEABr, PEACl, BAI, BZABr.
7. A 2D-3D-2D light absorbing layer based perovskite solar cell according to claim 1, characterized in that: the three-dimensional perovskite photoactive layer is made of MAPbI3, and the thickness of the film is 300-700 nm.
8. A preparation method of a perovskite solar cell based on a 2D-3D-2D light absorption layer is characterized by comprising the following steps: the method comprises the following steps:
step 1: cleaning and drying the substrate and carrying out UV treatment for 15 minutes;
step 2: spin-coating a cavity transport layer solution on the surface of the substrate, and then annealing to prepare a substrate;
and step 3: spin-coating a two-dimensional perovskite precursor material solution on the surface of a substrate to form a two-dimensional perovskite protective layer;
and 4, step 4: spin-coating a three-dimensional perovskite precursor solution in an isolation environment, namely a dust-free and oxygen-free drying environment, and then carrying out annealing treatment to form a 2D-3D perovskite layer;
and 5: spin-coating a two-dimensional perovskite precursor material solution on the surface of the three-dimensional perovskite again to form a two-dimensional perovskite secondary protection layer, and then carrying out annealing treatment to form a 2D-3D-2D perovskite light absorption layer;
step 6: spin-coating PCBM solution on the perovskite light absorption layer, and then carrying out annealing treatment to prepare an electron transmission layer;
and 7: under the high vacuum environment, a hole blocking layer is evaporated on the electron transport layer, and then a metal cathode is evaporated on the hole blocking layer;
and 8: and after the evaporation is finished, packaging the obtained device in an isolation environment to obtain the perovskite solar cell.
9. The method for preparing a perovskite solar cell based on a 2D-3D-2D light absorption layer according to claim 8, wherein the method comprises the following steps: in the step 3, the concentration of the two-dimensional perovskite precursor material solution is 1 mg/ml-20 mg/ml, the spin-coating rotation speed is 5000rpm, the spin-coating time is 30s, the annealing temperature is 100 ℃, and the annealing time is 10 min.
10. The method for preparing a perovskite solar cell based on a 2D-3D-2D light absorption layer according to claim 8, wherein the method comprises the following steps: in the step 4, the spin-coating rotation speed is 4000rpm, the spin-coating time is 30s, the annealing temperature is 120 ℃, and the annealing time is 20 min.
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